JP6880442B2 - Multi-chip package, light source device and projection device - Google Patents

Description

The present invention relates to a multi-chip package and a light source device and a projection device including the multi-chip package.

Today, a data projector is widely used as an image projection device that projects a screen or video image of a personal computer, an image based on image data stored in a memory card or the like, or the like on the screen. This projector collects the light emitted from the light source on a micromirror display element called a DMD (Digital Micromirror Device) or a liquid crystal plate, and displays a color image on the screen.

With the widespread use of video equipment such as personal computers and DVD players, the projector, which is a projection device, has been used for a wide range of applications from business presentations to home use. In such projectors, those using a high-brightness discharge lamp as a light source have been the mainstream in the past, but in recent years, a plurality of semiconductor light emitting elements such as laser diodes have been used as a light source, and this semiconductor light emitting element has been used as an excitation light source. Various projection devices including a fluorescent plate have been developed.

The projection device disclosed in Patent Document 1 includes a fluorescence light emitting region and excitation in which light emitted from a red light source device and an excitation light irradiation device which is blue wavelength band light is irradiated as excitation light to emit fluorescent light in the green wavelength band. A fluorescence plate device including an optical wheel having a diffusion transmission region for diffusing and transmitting the light emitted from the light irradiation device is arranged. The excitation light irradiation device is also regarded as a blue light source because the emitted light is diffused and transmitted through the diffusion transmission region of the optical wheel.

A plurality of blue laser diodes, which are semiconductor light emitting elements, are arranged in a matrix in the excitation light irradiation device of this projection device. As this blue laser diode, a can (CAN) package type in which a semiconductor laser chip is covered with a metal cover is used. Can (CAN) Package Type A plurality of laser diodes are held by an element holder having holding holes for holding individual laser diodes. This element holder is formed in a block shape in consideration of cooling efficiency.

Japanese Unexamined Patent Publication No. 2013-196946

The distance between the laser diodes in the element holder (that is, the distance between the pitches between the laser diodes) is set to be a predetermined distance or more depending on the outer shape of the laser diode packaged in the can (CAN) package. Further, in order to hold the laser diode in the element holder, a large number of members such as a holding plate for pressing and fixing the plurality of laser diodes to the element holder are required. Therefore, it is difficult to form the light source device thus formed in a small size.

An object of the present invention is to provide a multi-chip package that can be formed in a small size, and a light source device and a projection device including the multi-chip package.

The multi-chip package according to the present invention is provided on the case main body, a plurality of semiconductor light emitting element chips provided in rows and columns on the case main body, and on the emission side of the plurality of semiconductor light emitting element chips in the case main body. The plurality of semiconductor light emitting element chips having a translucent cover member formed in a plate shape and arranged in the outermost row of the case body are in the direction of the long axis in the elliptical cross section of the emitted light. However, the plurality of semiconductor light emitting element chips arranged so as to be parallel to the row direction in which the plurality of semiconductor light emitting element chips are arranged, and the plurality of semiconductor light emitting element chips arranged in the outermost column of the case body have an elliptical cross section of the emitted light. The direction of the major axis is arranged so as to be parallel to the row direction in which the plurality of semiconductor light emitting element chips are arranged, and the plurality of semiconductor light emitting element chips arranged in the central row of the case body are cross sections of emitted light. The direction of the long axis in the elliptical shape is parallel to the row direction in which the plurality of semiconductor light emitting element chips are arranged, and the direction parallel to the column direction in which the plurality of semiconductor light emitting element chips are arranged alternately. The distance P between the light emitting points of the semiconductor light emitting element chips that are arranged and adjacent to each other in the row or column direction satisfies the following relational expression (1).
P ≧ A1 ・ tanθ1 + A2 ・ tanθ2 ・ ・ ・ (1)
θ1, θ2: 1/2 of the spread angle in the row or column direction in the light emitted from each of the light emitting points of the semiconductor light emitting device chips adjacent to each other in the row or column direction.
A1, A2: Distances from the light emitting points of the semiconductor light emitting device chips adjacent to each other in the row or column direction to the emission side surface of the cover member.

The light source device according to the present invention has the above-mentioned multi-chip package and a plurality of collimator lenses corresponding to the respective semiconductor light-emitting element chips on the exit side of the plurality of semiconductor light-emitting element chips in the cover member. It is a feature.

The projection device according to the present invention includes the above-mentioned light source device, a display element that is irradiated with the light source light from the light source device to form an image light, and a projection that projects the image light emitted from the display element onto a screen. It is characterized by having a side optical system, the display element, and a projection device control unit that controls the light source device.

According to the present invention, a multi-chip package including a plurality of semiconductor light emitting device chips, and a light source device and a projection device including the multi-chip package can be formed in a compact size.

It is an external perspective view which shows the projection apparatus which concerns on 1st Embodiment of this invention. It is a figure which shows the functional block of the projection apparatus which concerns on 1st Embodiment of this invention. It is a plan schematic diagram which shows the internal structure of the projection apparatus which concerns on 1st Embodiment of this invention. It is a perspective view which shows typically the multi-chip package which concerns on 1st Embodiment of this invention. It is a front view which shows typically the multi-chip package which concerns on 1st Embodiment of this invention. FIG. 6 is a schematic cross-sectional view of VI-VI of FIG. 6 of the multi-chip package according to the first embodiment of the present invention. It is a schematic plan view of the main part which shows the light source apparatus which concerns on 1st Embodiment of this invention. It is a front view which shows typically the multi-chip package which concerns on 2nd Embodiment of this invention. FIG. 8 is a schematic cross-sectional view taken along the line IX-IX of FIG. 8 of the multi-chip package according to the second embodiment of the present invention. It is a front view which shows typically the multi-chip package which concerns on 3rd Embodiment of this invention. FIG. 5 is a schematic cross-sectional view taken along the line XI-XI of FIG. 10 of the multi-chip package according to the third embodiment of the present invention.

(First Embodiment)
Hereinafter, the first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is an external perspective view of the projection device 10. In the following description, the left and right sides of the projection device 10 indicate the left and right directions with respect to the projection direction, and the front and back directions indicate the front and rear directions with respect to the screen side direction of the projection device 10 and the traveling direction of the light flux.

Then, as shown in FIG. 1, the projection device 10 has a substantially rectangular parallelepiped shape, and has a lens cover 19 covering the projection port on the side of the front panel 12 which is a side plate in front of the housing of the projection device 10. At the same time, the front panel 12 is provided with a plurality of exhaust holes 17. Further, although not shown, it includes an Ir receiving unit that receives a control signal from a remote controller.

Further, a key / indicator unit 37 is provided on the upper surface panel 11 of the housing, and the key / indicator unit 37 switches between a power switch key, a power indicator for notifying power on / off, and projection on / off. Keys and indicators such as a projection switch key, a superheat indicator that notifies when a light source device, a display element, a control circuit, or the like overheats are arranged.

Further, on the back surface of the housing, an input / output connector portion provided with a USB terminal, a D-SUB terminal for inputting an analog RGB video signal, an S terminal, an RCA terminal, an audio output terminal, etc. on the back panel, and an input / output connector unit. Various terminals (groups) 20 such as a power adapter plug are provided. Further, a plurality of intake holes are formed on the back panel. A plurality of exhaust holes 17 are formed in each of the right side panel, which is a side plate of a housing (not shown), and the left side panel 15 and the front panel 12, which are side plates shown in FIG. In addition, intake holes 18 are also formed in the corners of the left panel 15 near the back panel and in the back panel.

Next, the projection device control unit of the projection device 10 will be described with reference to the functional block diagram of FIG. The projection device control unit is composed of a control unit 38, an input / output interface 22, an image conversion unit 23, a display encoder 24, a display drive unit 26, and the like.

The control unit 38 controls the operation of each circuit in the projection device 10, and is composed of a ROM that fixedly stores operation programs such as a CPU and various settings, a RAM that is used as a work memory, and the like. ing.

Then, the image signals of various standards input from the input / output connector unit 21 by the projection device control unit are in a predetermined format suitable for display by the image conversion unit 23 via the input / output interface 22 and the system bus (SB). After being converted so as to be unified with the image signal of, it is output to the display encoder 24.

Further, the display encoder 24 expands and stores the input image signal in the video RAM 25, generates a video signal from the stored contents of the video RAM 25, and outputs the video signal to the display drive unit 26.

The display drive unit 26 functions as a display element control means. The display drive unit 26 drives the display element 51, which is a spatial light modulation element (SOM), at an appropriate frame rate in response to the image signal output from the display encoder 24. The display drive unit 26 irradiates the display element 51 with a bundle of light rays emitted from the light source device 60 via a light source side optical system described later, thereby forming an optical image with the reflected light of the display element 51, and the projection side optical system. The image is projected and displayed on a screen (not shown) via the system. The movable lens group 235 of the projection side optical system is driven by the lens motor 45 for zoom adjustment and focus adjustment.

Further, the image compression / decompression unit 31 performs a recording process of sequentially writing the luminance signal and the color difference signal of the image signal to the memory card 32, which is a detachable recording medium, by compressing the data by processing such as ADCT and Huffman coding. ..

Further, the image compression / decompression unit 31 reads the image data recorded in the memory card 32 in the playback mode, decompresses the individual image data constituting the series of moving images in units of one frame, and converts the image data into an image. A process is performed in which the data is output to the display encoder 24 via the unit 23 and a moving image or the like can be displayed based on the image data stored in the memory card 32.

Then, the operation signal of the key / indicator unit 37 composed of the main key and the indicator provided on the upper surface panel 11 of the housing is directly transmitted to the control unit 38. The key operation signal from the remote controller is received by the Ir receiving unit 35, and the code signal demodulated by the Ir processing unit 36 is output to the control unit 38.

A voice processing unit 47 is connected to the control unit 38 via a system bus (SB). The audio processing unit 47 includes a sound source circuit such as a PCM sound source, converts audio data into analog in the projection mode and the reproduction mode, and drives the speaker 48 to emit loud sound.

Further, the control unit 38 controls the light source control circuit 41 as the light source control means. The light source control circuit 41 performs individual light emission control from the excitation light source or the red light source device at a predetermined timing so that the light in the predetermined wavelength band required at the time of image generation is emitted from the light source device 60, and red, green and red. It emits blue wavelength band light.

Further, the control unit 38 causes the cooling fan drive control circuit 43 to detect the temperature by a plurality of temperature sensors provided in the light source device 60 or the like, and controls the rotation speed of the cooling fan from the result of the temperature detection. Further, the control unit 38 keeps the cooling fan rotating even after the power of the projection device 10 main body is turned off by a timer or the like in the cooling fan drive control circuit 43, or depending on the result of temperature detection by the temperature sensor, the projection device 10 main body It also controls such as turning off the power.

Next, the internal structure of the projection device 10 will be described with reference to FIG. FIG. 3 is a schematic plan view showing the internal structure of the projection device 10. The projection device 10 includes a control circuit board 241 in the vicinity of the right panel 14. The control circuit board 241 includes a power supply circuit block, a light source control block, and the like. Further, the projection device 10 includes a light source device 60 on the side of the control circuit board 241, that is, in a substantially central portion of the projection device 10 housing. Further, in the projection device 10, a light source side optical system 170 and a projection side optical system 220 are arranged between the light source device 60 and the left panel 15.

The light source device 60 includes an excitation light irradiation device 70 which is a light source of blue wavelength band light and is an excitation light source, a red light source device 120 which is a light source of red wavelength band light, and a green light source device which is a light source of green wavelength band light. 80 and. The green light source device 80 is composed of an excitation light irradiation device 70 and a fluorescent screen device 100. Further, the light source device 60 is provided with a light guide optical system 140 that guides blue wavelength band light, green wavelength band light, and red wavelength band light. The light guide optical system 140 collects the light of each color wavelength band emitted from each of the color light source devices 70, 80, 120 to the incident port of the light tunnel 175.

The excitation light irradiation device 70 is arranged in the vicinity of the back panel 13 at a substantially central portion in the left-right direction of the projection device 10 housing. Further, the excitation light irradiation device 70 includes a multi-chip package 700 in which a plurality of semiconductor light emitting element chips 710 are arranged in the case body 720, a collimator lens 73 in which a plurality of semiconductor light emitting element chips 710 are arranged corresponding to each semiconductor light emitting element chip 710, and a plurality of collimator lenses 73. A reflection mirror 75 and a heat sink 81 are provided.

In the multi-chip package 700, a plurality of semiconductor light emitting device chips 710 are arranged in a matrix in rows and columns. The semiconductor light emitting device chip 710 is a semiconductor laser chip that is a light source that emits blue wavelength band light. The multi-chip package 700 is arranged so that the optical axis is parallel to the back panel 13. The emitted light from the multi-chip package 700 is emitted from the right side to the left side. Further, the heat sink 81 is arranged between the multi-chip package 700 and the right side panel 14.

On the optical axis of the light emitted from each semiconductor light emitting device chip 710, collimator lenses 73 that convert the light emitted from each semiconductor light emitting device chip 710 into parallel light are arranged. Further, the reflection mirror 75 is formed in a strip-shaped oblong shape corresponding to the semiconductor light emitting element chip 710 in the row direction (that is, the vertical direction of the projection device 10) in the multi-chip package 700. The plurality of reflection mirrors 75 are arranged at different inclination angles with respect to the light emitted from the semiconductor light emitting element chips 710 in each row. As a result, each reflection mirror 75 converts the optical axis of the light emitted from the multi-chip package 700 in the direction of the front panel 12. Then, the light reflected by the reflection mirror 75 is reduced in one direction by reducing the cross-sectional area of the light beam bundle and is incident on the condenser lens group 111 of the fluorescent screen apparatus 100.

A cooling fan 261 is arranged between the heat sink 81 and the back panel 13, and the multi-chip package 700 is cooled by the cooling fan 261 and the heat sink 81. Further, a cooling fan 261 is also arranged between the plurality of reflection mirrors 75 and the back panel 13, and the plurality of reflection mirrors 75 are cooled by the cooling fan 261.

The red light source device 120 includes a red light source 121 arranged so that the optical axis is parallel to the semiconductor light emitting device chip 710 of the multi-chip package 700, and a condenser lens group 125 that collects the light emitted from the red light source 121. , Is provided. The red light source 121 is a red light emitting diode which is a semiconductor light emitting element that emits light in the red wavelength band. Then, in the red light source device 120, the optical axis of the red wavelength band light emitted from the red light source device 120 is the optical axis of the blue wavelength band light emitted from the excitation light irradiation device 70, and the green wavelength band emitted from the fluorescent plate 101. They are arranged so that the optical axes of light intersect. Further, the red light source device 120 includes a heat sink 130 arranged on the right side panel 14 side of the red light source 121. A cooling fan 261 is arranged between the heat sink 130 and the front panel 12, and the red light source 121 is cooled by the cooling fan 261 and the heat sink 130.

The fluorescent plate device 100 constituting the green light source device 80 is arranged on the optical path of the excitation light emitted from the excitation light irradiation device 70 and in the vicinity of the front panel 12. The fluorescent plate device 100 rotates a fluorescent plate 101, which is a fluorescent wheel arranged so as to be parallel to the front panel 12, that is, perpendicular to the optical axis of the emitted light from the excitation light irradiation device 70, and the fluorescent plate 101. Condensing lens group 111 that collects the light bundle of the excitation light emitted from the driving motor 110 and the excitation light irradiation device 70 on the fluorescent plate 101 and the light bundle emitted from the fluorescent plate 101 in the direction of the back panel 13 And a condensing lens 115 that collects a bundle of light rays emitted from the fluorescent plate 101 in the direction of the front panel 12. A cooling fan 261 is arranged between the motor 110 and the front panel 12, and the cooling fan 261 cools the fluorescent screen apparatus 100 and the like.

The fluorescent plate 101 has a fluorescence emission region that receives emission light from the excitation light irradiation device 70 via the condenser lens group 111 as excitation light and emits fluorescence of green wavelength band light, and emission light from the excitation light irradiation device 70. A diffusion transmission region that diffuses and transmits a certain excitation light is arranged side by side continuously in the circumferential direction.

The base material of the fluorescent plate 101 is a metal base material made of copper, aluminum, or the like, and an annular groove is formed on the surface of the base material on the excitation light irradiation device 70 side, and the bottom of the groove is formed by silver vapor deposition or the like. It is mirrored and a layer of green phosphor is laid on this mirrored surface. Further, in the diffusion / transmission region in which the excitation light is diffused and transmitted, when the region is to be transmitted, a transparent base material having translucency is fitted into the cut-out through hole portion of the base material. In the case of a region for diffusion and transmission, a transparent base material having fine irregularities formed on the surface by sandblasting or the like is fitted.

When the blue wavelength band light as the excitation light from the excitation light irradiation device 70 is irradiated to the green phosphor layer of the fluorescent plate 101, the green phosphor in the green phosphor layer is excited and the phosphor layer of the fluorescent plate 101 is green. Emit green wavelength band light from the phosphor in all directions. The fluorescently emitted light bundle is emitted toward the back panel 13 side and is incident on the condenser lens group 111. On the other hand, the blue wavelength band light from the excitation light irradiation device 70 incident on the diffusion transmission region that diffuses and transmits the incident light in the fluorescent plate 101 is diffused and transmitted through the fluorescent plate 101, and is transmitted on the back side of the fluorescent plate 101 (in other words, in other words). For example, it is incident on the condenser lens 115 arranged on the front panel 12 side).

The light guide optical system 140 includes a condensing lens that collects light bundles in the red, green, and blue wavelength bands, and a reflection mirror that converts the optical axes of the light bundles in each color wavelength band to have the same optical axis. It consists of a dichroic mirror and the like. Specifically, the light guide optical system 140 includes blue wavelength band light emitted from the excitation light irradiation device 70, green wavelength band light emitted from the fluorescent plate 101, and red wavelength band emitted from the red light source device 120. First dichroic mirror 141 that transmits both blue and red wavelength band light at the position where light intersects, reflects green wavelength band light, and converts the optical axis of this green wavelength band light by 90 degrees in the left panel 15 direction. Is placed.

Further, on the optical axis of the blue wavelength band light transmitted by diffusing the fluorescent plate 101, that is, between the condenser lens 115 and the front panel 12, the blue wavelength band light is reflected and the optical axis of the blue light is transmitted. A first reflection mirror 143 that converts 90 degrees in the 15 directions of the left panel is arranged. A condenser lens 146 is arranged on the left side panel 15 side of the first reflection mirror 143, and a second reflection mirror 145 is arranged on the left side panel 15 side of the condenser lens 146. A condenser lens 147 is arranged on the back panel 13 side of the second reflection mirror 145. The second reflection mirror 145 converts the optical axis of the blue wavelength band light reflected by the first reflection mirror 143 and incident through the condenser lens 146 to the back panel 13 side by 90 degrees.

Further, a condenser lens 149 is arranged on the left side panel 15 side of the first dichroic mirror 141. Further, a second dichroic mirror 148 is arranged on the left side panel 15 side of the condenser lens 149 and on the back panel 13 side of the condenser lens 147. The second dichroic mirror 148 reflects the red wavelength band light and the green wavelength band light, converts the 90-degree optical axis to the back panel 13 side, and transmits the blue wavelength band light.

The optical axis of the red wavelength band light transmitted through the first dichroic mirror 141 and the optical axis of the green wavelength band light reflected by the first dichroic mirror 141 so as to coincide with the optical axis of the red wavelength band light are focused. It is incident on the lens 149. Then, the red and green wavelength band light transmitted through the condenser lens 149 is reflected by the second dichroic mirror 148 and condensed to the incident port of the light tunnel 175 via the condenser lens 173 of the light source side optical system 170. .. On the other hand, the blue wavelength band light transmitted through the condenser lens 147 is transmitted through the second dichroic mirror 148 and is focused on the incident port of the light tunnel 175 via the condenser lens 173.

The light source side optical system 170 is composed of a condenser lens 173, a light tunnel 175, a condenser lens 178, an optical axis conversion mirror 1811, a condenser lens 183, an irradiation mirror 185, and a condenser lens 195. Since the condenser lens 195 emits the image light emitted from the display element 51 arranged on the back panel 13 side of the condenser lens 195 toward the projection side optical system 220, it is also a part of the projection side optical system 220. Has been done.

In the vicinity of the light tunnel 175, a condenser lens 173 that collects the light source light is arranged at the incident port of the light tunnel 175. Therefore, the red wavelength band light, the green wavelength band light, and the blue wavelength band light are collected by the condenser lens 173 and incident on the light tunnel 175. The ray bundle incident on the light tunnel 175 is made into a ray bundle having a uniform intensity distribution by the light tunnel 175.

An optical axis conversion mirror 181 is arranged on the optical axis on the back panel 13 side of the light tunnel 175 via a condenser lens 178. The light beam emitted from the exit port of the light tunnel 175 is focused by the condenser lens 178, and then the optical axis is converted to the left panel 15 side by the optical axis conversion mirror 181.

The light beam reflected by the optical axis conversion mirror 181 is focused by the condenser lens 183, and then is irradiated to the display element 51 by the irradiation mirror 185 via the condenser lens 195 at a predetermined angle. The display element 51, which is a DMD, is provided with a heat sink 190 on the back panel 13 side, and the display element 51 is cooled by the heat sink 190.

The light bundle, which is the light source light applied to the image forming surface of the display element 51 by the light source side optical system 170, is reflected by the image forming surface of the display element 51 and projected onto the screen as projected light via the projection side optical system 220. Will be done. Here, the projection side optical system 220 is composed of a condenser lens 195, a movable lens group 235, and a fixed lens group 225. The movable lens group 235 is formed so as to be movable by a lens motor. The movable lens group 235 and the fixed lens group 225 are built in the fixed lens barrel. Therefore, the fixed lens barrel provided with the movable lens group 235 is a variable focus type lens, and is formed so that zoom adjustment and focus adjustment are possible.

By configuring the projection device 10 in this way, when the fluorescent plate 101 is rotated and light is emitted from the excitation light irradiation device 70 and the red light source device 120 at different timings, the red, green, and blue wavelength band lights are guided. Since the light is sequentially incident on the condenser lens 173 and the light tunnel 175 via the optical system 140 and further incident on the display element 51 via the light source side optical system 170, the DMD which is the display element 51 of the projection device 10 is included in the data. A color image can be projected on the screen by displaying the light of each color in a time-divided manner.

Next, the multi-chip package 700 will be described with reference to FIGS. 4 to 6. As shown in FIG. 4, in the multi-chip package 700, a total of 20 semiconductor light emitting device chips 710 in 4 rows and 5 columns are arranged in a matrix of rows and columns in a case body 720. The case body 720 is formed by a plate-shaped base plate 722 and a frame portion 724 erected from the base plate 722 in a rectangular frame shape in a plan view. The base plate 722 is formed with mounting holes 722a and 722b at two locations, an upper edge and a lower edge, respectively. The multi-chip package 700 is attached to the excitation light irradiation device 70 of the projection device 10 with the attachment hole 722a of FIG. 4 facing upward. Further, the frame portion 724 of the case main body 720 is provided with a cover member 730 made of a transparent glass plate which is a material having translucency. The cover member 730 is formed in a rectangular shape in a plan view having the same outer shape as the frame portion 724.

The semiconductor light emitting device chip 710 arranged in the case main body 720 is held by a holding portion 715 standing upright from the surface of the base plate 722 in the frame portion 724. The light emitting point S of the semiconductor light emitting device chip 710 is arranged so as to be located on the cover member 730 side. In other words, the cover member 730 is provided on the exit side of the plurality of semiconductor light emitting element chips 710 in the case body 720. The multi-chip package 700 shown in FIGS. 4 to 6 is schematically shown, and wiring for electrically connecting a plurality of semiconductor light emitting device chips 710 and terminals for supplying external power are omitted. ing.

As described above, the semiconductor light emitting device chip 710 is a semiconductor laser chip that emits blue wavelength band light. Generally, the light emitted from the semiconductor laser chip has a different spreading angle in the vertical direction and the horizontal direction, and the cross-sectional shape of the emitted light is elliptical. In the present embodiment, as shown in FIG. 4, the semiconductor light emitting device in which the long axis VA direction of the cross-sectional elliptical LR of the light emitted from the light emitting point S of the semiconductor light emitting device chip 710 is arranged in rows and columns. All semiconductor light emitting device chips 710 are arranged so as to be parallel to the column direction of the element chip 710 and parallel to the row direction of the semiconductor light emitting device chip 710 in the minor axis HA direction.

Further, the pitch of arrangement of the semiconductor light emitting element chips 710, that is, the distance between the light emitting points S of the semiconductor light emitting element chips 710 (distance between light emitting points P) is set so as to satisfy the following relational expression (1).
P ≧ A ₁ · tan θ ₁ + A ₂ · tan θ ₂ ··· (1)
θ ₁ , θ ₂ : 1/2 of the spread angle in the row or column direction in the light emitted from the light emitting point S of each semiconductor light emitting device chip 710 adjacent to each other in the row or column direction.
A ₁ , A ₂ : Distance from the light emitting point S of each semiconductor light emitting device chip 710 adjacent to each other in the row or column direction to the emission side surface of the cover member 730.

For example, as shown in FIGS. 5 and 6, the distance (between the light emitting point distance _{P R)} of the light emitting points _{S 23, S 33} of the semiconductor light-emitting element chips _710D 23, 710D ₃₃ adjacent in the column direction, the relational expression Arranged to satisfy (1). Here, 1/2 of the column direction of the spread angle in the light emitted from the light emitting point _{S 23} in the semiconductor light-emitting element chips 710D ₂₃ and theta _V23, emitted in the cover member 730 from the light emitting point _{S 23} in the semiconductor light-emitting element chip 710D _{23 Let A 23} be the distance to the side surface. Similarly, 1/2 of the column direction of the spread angle in the light emitted from the light emitting point _{S 33} in the semiconductor light-emitting element chip 710D ₃₃ and theta _V33, emitted in the cover member 730 from the light emitting point _{S 33} in the semiconductor light-emitting element chip 710D _{33 Let A 33} be the distance to the side surface. _{Therefore, the distances A 1} , A ₂ , and the angles θ ₁ and θ ₂ in the relational expression (1) are the distances A ₂₃ , A ₃₃ , and the angles θ _V23 and θ _V 33, respectively. Then, the relational expression (1) can be expressed as the following relational expression (2).
_{P R ≧ A 23 · tanθ V23} + A 33 · tanθ V33 ··· (2)

In the present _embodiment, A 23 _{= A 33,} a theta _V23 = theta _V33, the distance _{P R} between the light emitting points in the row direction are all the same. _{Further, in the present embodiment, θ V23} and θ _V33 , which are 1/2 of the spread angle in the column direction of the light emitted from the light emitting points S ₂₃ and S ₃₃ of the semiconductor light emitting device chips 710D ₂₃ and 710D ₃₃ , are the light emitting points. It is 1/2 of the spread angle in the major axis VA direction of the elliptical cross-section LR in the light emitted from S ₂₃ and S _33.

Further, although not shown in cross section, also in the light emitting point distance _{P S} of the semiconductor light-emitting element chips _710D 22, 710D ₂₃ adjacent in the row direction, it is arranged so as to satisfy the above relational expression (1). Here, 1/2 of the spread angle in the row direction of the light emitted from the light emitting points S ₂₂ and S ₂₃ of the semiconductor light emitting device chips 710D ₂₂ and 710D _{23 is set to θ H22} and θ _H23 , respectively. Then, the distances from the light emitting points S ₂₂ and S _{23 of} the semiconductor light emitting device chips 710D ₂₂ and 710D _{23 to} the emission side surface of the cover member 730 are _{defined as A 22} and A ₂₃ . _{Therefore, the distances A 1} , A ₂ , and the angles θ ₁ and θ ₂ in the relational expression (1) are the distances A ₂₂ , A ₂₃ , and the angles θ _H22 and θ _H23 , respectively. Then, the relational expression (1) can be expressed as the following relational expression (3).
_{P S ≧ A 22 · tanθ H22} + A 23 · tanθ H23 ··· (3)

In the present _embodiment, A 22 _{= A 23,} a theta _H22 = theta _H23, the distance _{P S} between the light emitting points in the row direction are all the same. _{Further, in the present embodiment, θ H22} and θ _H23 , which are 1/2 of the spread angle in the row direction of the light emitted from the light emitting points S ₂₂ and S ₂₃ of the semiconductor light emitting device chips 710D ₂₂ and 710D ₂₃ , are the light emitting points. It is 1/2 of the spread angle in the minor axis HA direction of the elliptical cross-section LR in the light emitted from S ₂₂ and S _23.

In this way, all the semiconductor light emitting element chips 710 are arranged so as to satisfy the above relational expression (1) for each of the adjacent semiconductor light emitting element chips 710. As a result, the light of the elliptical cross-section LR emitted from the semiconductor light emitting device chip 710 does not overlap on the emission side surface of the cover member 730. Therefore, the light emitted from each semiconductor light emitting device chip 710 can be efficiently incident on the collimator lens 73.

As shown in FIGS. 3 and 7, the light emitted from the multi-chip package 700 is converted into parallel light by the collimator lens 73 and is applied to the reflection mirror 75. Here, the reflection mirror 75 is formed in a strip-shaped oblong rectangle long in the vertical direction so as to reflect the emitted light of the four semiconductor light emitting element chips 710 in the row direction of the multi-chip package 700. Then, the emitted light from the multi-chip package 700 reflected by each reflection mirror 75 passes through the first dichroic mirror 141 and is incident on the condenser lens group 111 of the fluorescent screen apparatus 100.

Here, in the present embodiment, as shown in FIG. 7, the plurality of reflection mirrors 75-1 to 75-5 correspond to the four semiconductor light emitting device chips 710 in the row direction of the multi-chip package 700. They are arranged at different inclination angles with respect to the light emitted from the semiconductor light emitting device chip 710. Specifically, among the light beam bundles emitted from the multi-chip package 700, _{the light LRs 1} and LR ₂ and the light LRs ₄ and LR ₅ outside the light LR ₃ near the optical axis are inclined at a predetermined angle. It is incident on the condenser lens group 111. Here, as described above, the excitation light irradiation device 70 is used as the excitation light of the fluorescence plate device 100, and is also used as a light source of blue wavelength band light by passing through the diffusion transmission region of the fluorescence plate 101.

The fluorescence of the green wavelength band light emitted from the fluorescence emission region of the fluorescence plate 101 is diffused light because it emits light from the phosphor of the phosphor layer. Then, the blue wavelength band light, which is a blue light source that diffuses and transmits the diffusion transmission region of the fluorescent plate 101, is transmitted by inclining the diffusion transmission region (diffusion plate) at a predetermined angle as described above, so that the diffusion half-value angle is large. Increased and transparent. For example, the half-diffusion angle when incident is orthogonal to the diffuser plate is 8.5 degrees, but it can be increased to 25 degrees when incident is inclined to the diffuser plate as in the present embodiment. .. At this time, the half-value angle of fluorescence, which is green wavelength band light, is 60 degrees. Therefore, the difference in the diffusion half-value angle between the blue wavelength band light and the green wavelength band light is reduced, the caliber erosion by the condenser lens in the subsequent optical path is reduced, and the central portion and the peripheral portion of the image light from the display element 51 are reduced. Color unevenness is suppressed.

In the present embodiment, the fluorescence from the fluorescence emission region of the fluorescent plate 101 is configured to be emitted to the back panel 13 side, but the present invention is not limited to this, and various types of light source devices are used for the light emitted from the light source. A plurality of differently inclined reflection mirrors 75 can be provided. For example, instead of the fluorescence emission region in the present embodiment, a green color filter containing a phosphor is provided, and fluorescence, which is green wavelength band light emitted by irradiation with excitation light, is emitted to the front panel 12 side. The light source device of the present embodiment can be provided with a plurality of reflection mirrors 75 of the present embodiment.

(Second Embodiment)
Next, a second embodiment according to the present invention will be described with reference to FIGS. 8 and 9. In this second embodiment, instead of the multi-chip package 700 in the first embodiment, the multi-chip package 700A in which the arrangement of the semiconductor light emitting device chips 710 in the multi-chip package 700 is changed is used. The same members and the same parts as those in the first embodiment are used with the same reference numerals, and the description thereof will be omitted or simplified.

The multi-chip package 700A of the present embodiment is provided with a total of 25 semiconductor light emitting device chips 710 in 5 rows and 5 columns in rows and columns. The major axis VA direction of the elliptical cross-section LR of the light from all the semiconductor light emitting device chips 710 is parallel to the column direction. The distance between the light emitting points S of the semiconductor light emitting device chip 710 (distance between the light emitting points P) is set so as to satisfy the above relational expression (1). Specifically, it is set as follows.

For example, the semiconductor light-emitting element chips _710D 33 adjacent in the column _direction, 710D 43, the light emitting points _S 33 of 710D _53, S _43, the distance _{S 53} (between the light emitting point distance _{P R1, P R2),} the above equation ( Arranged to satisfy 1). Here, in the same manner as described above, the distances A ₁ , A ₂ , and the angles θ ₁ , and θ ₂ in the relational expression (1) are the distances A ₃₃ , A ₄₃ , the distance A ₄₃ , A ₅₃ , the angles θ _V33 , and the θ _{V 43} , respectively. The angles are θ _V43 and θ _V53 . Then, the relational expression (1) can be expressed as the following relational expressions (4) and (5).
_{P R1 ≧ A 33 · tanθ V33} + A 43 · tanθ V43 ··· (4)
_{P R2 ≧ A 43 · tanθ V43} + A 53 · tanθ V53 ··· (5)

Similarly, in the row direction, the distances (distances between light emitting points _PS1 and _PS2 ) of the light emitting points S ₃₁ , S ₃₂ , and S _{33 of the semiconductor light emitting element chips 710D 31} , 710D ₃₂ , and 710D ₃₃ are the above-mentioned relational expressions ( Arranged to satisfy 1). _{Similarly, the distances A 1} , A ₂ , and the angles θ ₁ , θ ₂ in the relational expression (1) are the distances A ₃₂ , A ₃₃ , the distance A ₃₁ , A ₃₂ , the angle θ _H32 , θ _H33 , and the angles θ _H31 , θ, respectively. _Let it be H32. Then, the relational expression (1) can be expressed as the following relational expressions (6) and (7).
_PS1 ≧ A ₃₂・ tanθ _H32 + A ₃₃・ tanθ _H33・ ・ ・ (6)
_PS2 ≧ A ₃₁・ tanθ _H31 + A ₃₂・ tanθ _H32・ ・ ・ (7)

Then, in the present embodiment, in the row direction arrangement of the semiconductor light emitting element chips 710, the distance _{between the light emitting points PS2} outside the case body 720 is larger than the _{distance PS1} between the light emitting points in the center row of the case body 720. Is set smaller. Similarly, in the arrangement in the column direction of the semiconductor light-emitting device chip 710, it between the outer light emitting points of the center of the case body 720 than the light emitting point distance P _R1 column of the case body 720 distance P _R2 is smaller ing. As a result, when a plurality of semiconductor light emitting device chips 710 are arranged in a matrix, the semiconductor light emitting device chip 710 in the central portion may be affected by the peripheral semiconductor light emitting device chips 710 and it may be difficult to dissipate heat. According to the present embodiment, regarding the sparseness and density of the plurality of semiconductor light emitting device chips 710, the heat dissipation effect of the multi-chip package 700A can be enhanced by making the central portion "sparse" and the outside "dense".

When the arrangement of the multi-chip package 700A in the projection device 10 (light source device 60) is a path for the cooling air flowing from the intake port to the exhaust port from which the outside air is taken in, the plurality of semiconductor light emitting element chips 710 may be arranged. The arrangement may be such that the intake port side of the multi-chip package 700A is "dense" and the exhaust port side is "sparse". Further, in the present embodiment, the distance P between the light emitting points in the central portion is set to be larger than that on the outside in both the row direction and the column direction of the semiconductor light emitting device chips 710 provided in rows and columns. Alternatively, the distance P between the light emitting points in only one of the row directions may be set to be different.

(Third Embodiment)
Next, a third embodiment according to the present invention will be described with reference to FIGS. 10 and 11. In this third embodiment, instead of the multi-chip package 700 in the first embodiment, the arrangement of the semiconductor light-emitting device chip 710 in the multi-chip package 700 is changed to form an elliptical cross-sectional LR emitted from the semiconductor light-emitting device chip 710. This is a multi-chip package 700B in which the major axis VA and the minor axis HA are arranged in different directions. The same members and the same parts as those in the first embodiment are used with the same reference numerals, and the description thereof will be omitted or simplified.

The multi-chip package 700B of the present embodiment is provided with a total of 21 semiconductor light emitting device chips 710 in rows and columns, excluding the four corners of 5 rows and 5 columns. Further, the semiconductor light emitting device chips 710 in the outer row of the case body 720 are arranged so that the direction of the long axis VA in the elliptical cross-section LR of the emitted light is parallel to the row direction in which the plurality of semiconductor light emitting device chips 710 are arranged. Will be done. Similarly, in the semiconductor light emitting device chips 710 in the outer row of the case body 720, the direction of the long axis VA in the elliptical cross-section LR of the emitted light is parallel to the row direction in which the plurality of semiconductor light emitting device chips 710 are arranged. Be placed. Further, the rows on both sides of the row in the center of the case body 720 (that is, the second and fourth rows from the left when viewed in FIG. 10) are the long axis VA in the elliptical cross-section LR of the emitted light of the semiconductor light emitting device chip 710. Is arranged so that the direction of is parallel to the row direction in which the plurality of semiconductor light emitting device chips 710 are arranged. In the central column of the case body 720, the direction of the long axis VA in the elliptical cross-section LR of the emitted light is parallel to the row direction in which a plurality of semiconductor light emitting device chips 710 are arranged, in order from the upper semiconductor light emitting device chip 710. And those parallel to the column direction are arranged alternately.

The distance between the light emitting points S of the semiconductor light emitting device chip 710 (distance between the light emitting points P) is set so as to satisfy the above relational expression (1). Specifically, it is set as follows.
For example, the semiconductor light-emitting element chip _710D 13 adjacent in the column _direction, 710D 23, the light emitting points _S 13 of 710D _33, S _23, the distance _{S 33} (between the light emitting point distance _{P R1, P R2),} the above equation ( Arranged to satisfy 1). Here, in the same manner as described above, the distances A ₁ , A ₂ , and the angles θ ₁ , and θ ₂ in the relational expression (1) are the distances A ₂₃ , A ₃₃ , the distance A ₁₃ , A ₂₃ , the angles θ _V23 , and the θ _H 33, respectively. _Assuming that the angles are θ _H13 and θ V23, the relational expression (1) can be expressed as the following relational expressions (8) and (9).
_{P R1 ≧ A 23 · tanθ V23} + A 33 · tanθ H33 ··· (8)
_{P R2 ≧ A 13 · tanθ H13} + A 23 · tanθ V23 ··· (9)

Similarly, in the row direction, the distances (distances between light emitting points _PS1 and _PS2 ) of the light emitting points S ₂₁ , S ₂₂ and S _{23 of the semiconductor light emitting element chips 710D 21} , 710D ₂₂ and 710D ₂₃ are the above-mentioned relational expressions ( Arranged to satisfy 1). _{Similarly, the distances A 1} , A ₂ , and the angles θ ₁ , θ ₂ in the relational expression (1) are the distances A ₂₂ , A ₂₃ , the distances A ₂₁ , A ₂₂ , the angles θ _V22 , θ _H23 , and the angles θ _H21 , θ, respectively. _Let it be V22. Then, the relational expression (1) can be expressed as the following relational expressions (10) and (11).
_PS1 ≧ A ₂₂・ tanθ _V22 + A ₂₃・ tanθ _H23・ ・ ・ (10)
_PS2 ≧ A ₂₁ · tanθ _H21 + A ₂₂ · tanθ _V22 ... (11)

Then, in the present embodiment, in the row direction arrangement of the semiconductor light emitting element chips 710, the distance _{between the light emitting points PS2} outside the case body 720 is larger than the _{distance PS1} between the light emitting points in the center row of the case body 720. Is set smaller. Similarly, in the arrangement in the column direction of the semiconductor light-emitting device chip 710, it between the outer light emitting points of the center of the case body 720 than the light emitting point distance P _R1 column of the case body 720 distance P _R2 is smaller ing. Therefore, also in the present embodiment, the heat dissipation effect of the multi-chip package 700B can be enhanced by making the central portion "sparse" and the outer side "dense" with respect to the sparseness of the plurality of semiconductor light emitting element chips 710.

Further, as in the present embodiment, the direction of the long axis VA of the elliptical cross-section LR of the light from the semiconductor light emitting device chip 710 is mixed with those parallel to the row direction and those parallel to the column direction. Can be arranged. As a result, the shape of the light beam bundle of the light emitted from the multi-chip package 700 can be made uniform as a whole. Further, by arranging the directions of the long axis VA of the semiconductor light emitting element chip 710 on the outer row and column of the case body 720 so as to be parallel to the row or column, respectively, on the outside of the case body 720. The spread of the heading light can be reduced.

Although the embodiment of the present invention has been described above, the present invention is not limited to the present embodiment and can be implemented with various modifications. _{For example, the distance (distances A 1} , A ₂ ) from the light emitting point S of the semiconductor light emitting device chip 710 to the emission side surface of the cover member 730 is determined in all the semiconductor light emitting device chips 710 in the multi-chip packages 700, 700A, 700B. Although it is the same, it can be set differently for each semiconductor light emitting device chip 710.

Further, the collimator lens 73 is arranged so that the optical axis coincides with the optical axis of each semiconductor light emitting element chip 710, but the present invention is not limited to this, and the optical axis of the collimator lens 73 is the optical axis of each semiconductor light emitting element chip 710. The collimator lens 73 may be arranged so as to be displaced in a predetermined direction with respect to the collimator lens 73.

As described above, according to the embodiment of the present invention, the multi-chip packages 700, 700A, 700B include a case main body 720, a plurality of semiconductor light emitting element chips 710 provided in rows and columns on the case main body 720, and a case main body 720. The translucent cover member 730 provided in the above is provided. Then, the semiconductor light emitting element chips 710 adjacent to each other in the row or column direction are arranged so as to satisfy the above relational expression (1).

As a result, a plurality of semiconductor light emitting device chips 710 can be compactly packaged, so that a small multi-chip package 700, 700A, 700B can be provided. Since the semiconductor light emitting element chips 710 are arranged so as to satisfy the relational expression (1), the light from the adjacent semiconductor light emitting element chips 710 does not overlap on the surface of the cover member 730. Therefore, it is possible to provide a multi-chip package 700, 700A, 700B that emits efficient light source light.

Further, in the multi-chip package 700, the distances (distances between light emitting points P) of the light emitting points S of the adjacent semiconductor light emitting element chips 710 can all be the same. This makes it easier to arrange the collimator lens 73.

Further, in the multi-chip packages 700A and 700B, the distance between light emitting points P outside the distance P between light emitting points in the central portion in the row or column direction of the adjacent semiconductor light emitting element chips 710 can be made smaller. As a result, the multi-chip packages 700A and 700B having an improved heat dissipation effect can be obtained, so that a cooling device such as a heat sink 81 can be formed in a small size.

Further, the semiconductor light emitting device chip 710 can be a semiconductor light emitting device chip 710 such as a semiconductor laser chip that emits light having an elliptical cross section. As a result, the multi-chip packages 700, 700A, and 700B including the semiconductor light emitting device chip that emits the LR having an elliptical cross section can be obtained.

Further, the semiconductor light emitting device chips 710 can be arranged so that the major axis VA direction of the elliptical cross section LR is parallel to the row or column direction. This facilitates the placement of optical devices such as the reflection mirror 75 on the optical path after the multi-chip packages 700, 700A.

Further, a semiconductor light emitting device chip 710 whose long axis VA direction of the elliptical cross section is oriented in the row direction and a semiconductor light emitting device chip whose long axis VA direction is oriented in the column direction can be mixed. As a result, the shape of the light from the multi-chip package 700B can be made closer to uniform.

Further, the semiconductor light emitting element so that the long axis VA direction of the cross-sectional elliptical LR of the light from the semiconductor light emitting element chip 710 in the outer row direction is parallel to the row direction and the long axis VA direction in the column direction is parallel to the column direction. The chip 710 is arranged to form the multi-chip package 700B. As a result, it is possible to suppress the spread of the emitted light to the outside of the case body 720 for the semiconductor light emitting device chips 710 arranged in rows and columns.

Further, the semiconductor light emitting device chip 710 can be a semiconductor laser chip that emits light having an elliptical cross section. As a result, the multi-chip packages 700, 700A and 700B using a power-saving and high-brightness laser diode can be obtained.

Further, the light source device 60 includes a multi-chip package 700, 700A, 700B and a plurality of collimator lenses 73 corresponding to a plurality of semiconductor light emitting element chips 710 on the exit side of the cover member 730. As a result, the light source device 60 in which the light emitted from the semiconductor light emitting device chip 710 is parallel light can be obtained.

Further, the multi-chip packages 700, 700A and 700B can be used as an excitation light source of the fluorescent screen apparatus. As a result, it is possible to obtain a light source device 60 having light from a phosphor, which is considered to be diffused light, as a light source.

Further, a plurality of reflection mirrors 75 arranged at different inclination angles with respect to the semiconductor light emitting device chip 710 correspond to a plurality of semiconductor light emitting device chips 710 in the row or column direction of the multi-chip packages 700, 700A, 700B. It will be provided. As a result, various optical paths can be adopted, so that the layout limitation of the multi-chip packages 700, 700A, 700B in the light source device 60 can be reduced.

Further, the projection device 10 is formed by a light source device 60, a display element 51, a projection side optical system 220, and a projection device control unit. As a result, the light source device 60 and the projection device 10 including the multi-chip packages 700, 700A, 700B formed in a small size can be obtained, and thus the miniaturized projection device 10 can be provided.

The embodiments described above are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other embodiments, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are also included in the scope of the invention described in the claims and the equivalent scope thereof.

The inventions described in the first claims of the present application are described below.
[1] Case body and
A plurality of semiconductor light emitting element chips provided in rows and columns on the case body, and
A translucent cover member provided on the exit side of the plurality of semiconductor light emitting device chips in the case body and formed in a plate shape, and
Have,
A multi-chip package characterized in that the distance P between light emitting points of the semiconductor light emitting device chips adjacent to each other in the row or column direction satisfies the following relational expression (1).
P ≧ A ₁ · tan θ ₁ + A ₂ · tan θ ₂ ··· (1)
θ ₁ , θ ₂ : 1/2 of the spread angle in the row or column direction in the light emitted from each emission point of the semiconductor light emitting device chips adjacent to each other in the row or column direction.
A ₁ , A ₂ : Distances from the light emitting points of the semiconductor light emitting device chips adjacent to each other in the row or column direction to the emission side surface of the cover member [2] The distance P between the light emitting points is the row or the distance P. The multi-chip package according to the above [1], which is the same for all the plurality of semiconductor light emitting device chips in the column direction.
[3] The distance P between light emitting points is the distance P between light emitting points outside the distance P between light emitting points in the central portion in the row or column direction, according to the above [1]. Multi-chip package.
[4] The multi-chip package according to any one of the above [1] to the above [3], wherein the emitted light from the semiconductor light emitting device chip has an elliptical cross section.
[5] The multi-chip package according to the above [4], wherein the plurality of semiconductor light emitting device chips are arranged so that the long axis direction of the elliptical cross section of the emitted light is parallel to the row or column direction. ..
[6] The semiconductor light emitting device chip whose long axis direction of the elliptical cross section of the emitted light is oriented in the row direction and the semiconductor light emitting device chip whose longitudinal direction is oriented in the column direction are mixed. 4] or the multi-chip package according to the above [5].
[7] Of the plurality of semiconductor light emitting element chips, the long axis direction of the elliptical cross section of the emitted light of the plurality of semiconductor light emitting element chips in the row direction arranged outside is parallel to the row direction, and the column direction. The semiconductor light emitting element chips are arranged so that the long axis direction of the elliptical cross section of the emitted light of the plurality of semiconductor light emitting element chips is parallel to the column direction. 5] The multi-chip package according to any one of.
[8] The multi-chip package according to any one of the above [1] to the above [7], wherein the semiconductor light emitting device chip is a semiconductor laser chip.
[9] The multi-chip package according to any one of the above [1] to [8] and the multi-chip package.
On the exit side of the plurality of semiconductor light emitting device chips in the cover member, a plurality of collimator lenses corresponding to the respective semiconductor light emitting device chips are provided.
A light source device characterized by having.
[10] The light source device according to the above [9], wherein the light source device includes a fluorescent plate device including a fluorescent light emitting region that is excited by the light emitted from the multi-chip package to emit fluorescent light.
[11] The inclination angles with respect to the emitted light from the plurality of semiconductor light emitting device chips in the row or column direction are made different corresponding to the plurality of semiconductor light emitting device chips in the row or column direction of the multi-chip package. The light source device according to the above [9] or the above [10], which has a plurality of reflection mirrors arranged therein.
[12] The light source device according to any one of the above [9] to [11] and the light source device.
A display element that is irradiated with the light source light from the light source device to form image light, and
A projection side optical system that projects the image light emitted from the display element onto a screen, and
The display element, a projection device control unit that controls the light source device, and
A projection device characterized by having.

10 Projector 11 Top panel 12 Front panel 13 Back panel 14 Right panel 15 Left panel 17 Exhaust hole 18 Intake hole 19 Lens cover 21 Input / output connector 22 Input / output interface 23 Image converter 24 Display encoder 25 Video RAM
26 Display drive unit 31 Image compression / decompression unit 32 Memory card 35 Ir receiver 36 Ir processing unit 37 Key / indicator 38 Control unit 41 Light source control circuit 43 Cooling fan drive control circuit 45 Lens motor 47 Sound processing unit 48 Speaker 51 Display Element 60 Light source device 70 Color light source device 70 Excitation light irradiation device 73 Collimeter lens 75, 75-1 to 75-5 Reflection mirror 80 Green light source device 81 Heat shield 100 Fluorescent plate device 101 Fluorescent plate 110 Motor 111 Condensing lens group 115 Condensing lens 120 Color light source device 120 Red light source device 121 Red light source 125 Condensing lens group 130 Heat sink 140 Light guide optical system 141 First dichroic mirror 143 First reflection mirror 145 Second reflection mirror 146 Condensing lens 147 Condensing lens 148 Second dichroic mirror 149 Condensing lens 170 Light source side optical system 173 Condensing lens 175 Light tunnel 178 Condensing lens 181 Optical axis conversion mirror 183 Condensing lens 185 Irradiation mirror 190 Heat sink 195 Condenser lens 220 Projection side optical system 225 Fixed lens group 235 Movable lens group 241 Control circuit board 261 Cooling fan 700 Multi-chip package 700A Multi-chip package 700B Multi-chip package 710 Semiconductor light emitting element chip 715 Holding part 720 Case body 722 Base plate 722a Mounting hole 722b Mounting hole 724 Frame part 730 Cover member

Claims (8)

With the case body
A plurality of semiconductor light emitting element chips provided in rows and columns on the case body, and
A translucent cover member provided on the exit side of the plurality of semiconductor light emitting device chips in the case body and formed in a plate shape, and
Have,
In the plurality of semiconductor light emitting device chips arranged in the outermost row of the case body, the direction of the long axis in the elliptical cross section of the emitted light is parallel to the row direction in which the plurality of semiconductor light emitting device chips are arranged. Arranged as
In the plurality of semiconductor light emitting device chips arranged in the outermost row of the case body, the direction of the long axis in the elliptical cross section of the emitted light is parallel to the row direction in which the plurality of semiconductor light emitting device chips are arranged. Arranged as
The plurality of semiconductor light emitting device chips arranged in the central column of the case body have a long axis direction in an elliptical cross section of the emitted light parallel to the row direction in which the plurality of semiconductor light emitting device chips are arranged. , And those parallel to the column direction in which the plurality of semiconductor light emitting device chips are arranged are alternately arranged.
A multi-chip package characterized in that the distance P between light emitting points of the semiconductor light emitting device chips adjacent to each other in the row or column direction satisfies the following relational expression (1).
P ≧ A1 ・ tanθ1 + A2 ・ tanθ2 ・ ・ ・ (1)
θ1, θ2: 1/2 of the spread angle in the row or column direction in the light emitted from each of the light emitting points of the semiconductor light emitting device chips adjacent to each other in the row or column direction.
A1, A2: Distances from the light emitting points of the semiconductor light emitting device chips adjacent to each other in the row or column direction to the emission side surface of the cover member. The multi-chip package according to claim 1, wherein the distance P between light emitting points is the same for all the plurality of semiconductor light emitting device chips in the row or column direction. The multi-chip package according to claim 1, wherein the distance between light emitting points P is smaller than the distance P between light emitting points in the central portion in the row or column direction. The multi-chip package according to any one of claims 1 to 3 , wherein the semiconductor light emitting device chip is a semiconductor laser chip. The multi-chip package according to any one of claims 1 to 4,
On the exit side of the plurality of semiconductor light emitting device chips in the cover member, a plurality of collimator lenses corresponding to the respective semiconductor light emitting device chips are provided.
A light source device characterized by having. The light source device according to claim 5 , further comprising a fluorescent screen device including a fluorescent light emitting region that is excited by light emitted from the multi-chip package to emit fluorescent light. Corresponding to the plurality of semiconductor light emitting device chips in the row or column direction of the multi-chip package, they are arranged at different inclination angles with respect to the emitted light from the plurality of semiconductor light source chips in the row or column direction. The light source device according to claim 5 or 6 , further comprising a plurality of reflection mirrors. The light source device according to any one of claims 5 to 7.
A display element that is irradiated with the light source light from the light source device to form image light, and
A projection side optical system that projects the image light emitted from the display element onto a screen, and
The display element, a projection device control unit that controls the light source device, and
A projection device characterized by having.

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