JP6825542B2 - Power converter - Google Patents

Description

The present invention relates to a power conversion device in which a plurality of semiconductor modules incorporating a semiconductor element and a plurality of cooling tubes for cooling the semiconductor modules are laminated.

As a power conversion device that performs power conversion between DC power and AC power, a plurality of semiconductor modules incorporating semiconductor elements and a plurality of cooling tubes for cooling the semiconductor modules are laminated to form a laminated body. Is known (see Patent Document 1 below). In this power conversion device, the semiconductor element is switched to convert the DC power supplied from the DC power supply into AC power. When the semiconductor element is switched, the semiconductor module generates heat. Therefore, the semiconductor module is cooled by using the cooling pipe.

The power conversion device further includes electronic components such as a reactor, a capacitor, and a DC-DC converter. These electronic components are electrically connected to the semiconductor module. When the power converter is operated, these electronic components also generate heat. Therefore, in recent years, it has been studied to cool these electronic components.

For example, it is being considered to provide a cooling plate made of a metal plate and having a shape similar to that of a cooling pipe. Then, it has been studied that the electronic component is sandwiched between the cooling plate and the cooling pipe, and the heat generated from the electronic component is dissipated by using the cooling plate. In this way, the temperature of the electronic component can be lowered.

JP-A-2015-220839

However, even if the above configuration is adopted, the electronic components cannot be sufficiently cooled. That is, even if a simple metal plate is used as the cooling plate, the heat generated from the electronic component cannot be sufficiently absorbed. Further, if the cooling plate is formed in the same shape as the cooling pipe, the area of the cooling plate is small, so that a sufficient heat dissipation effect cannot be obtained.

The present invention has been made in view of such a problem, and an object of the present invention is to provide a power conversion device capable of further improving the cooling efficiency of electronic components.

One aspect of the present invention is a laminated body (10) in which a plurality of semiconductor modules (2) incorporating a semiconductor element (20) and a plurality of cooling tubes (3) through which a refrigerant for cooling the semiconductor modules flows are laminated. ,
Electronic components (4, 6) electrically connected to the semiconductor module
A cooling plate for cooling the electronic component (31),
A case (11) for accommodating the laminated body is provided.
The laminate, the electronic components, and the cooling plate are arranged in the stacking direction of the laminate.
The cooling plate is connected to the cooling pipe, and an in-plate flow path (310) through which the refrigerant flows in a direction orthogonal to the stacking direction is formed in the cooling plate.
The cooling plate, the area when viewed from the stacking direction much larger than the above cooling tube,
In the case, there is a power conversion device (1) in which a through hole (111a) penetrating in the stacking direction is formed, and the through hole is closed by the cooling plate .
Another aspect of the present invention is a laminate (10) in which a plurality of semiconductor modules (2) incorporating a semiconductor element (20) and a plurality of cooling tubes (3) through which a refrigerant for cooling the semiconductor modules flows are laminated. When,
Two electronic components (4, 6), a first electronic component (4) and a second electronic component (6), electrically connected to the semiconductor module, and
A cooling plate (31) for cooling the electronic component is provided.
The laminate, the electronic components, and the cooling plate are arranged in the stacking direction of the laminate.
The cooling plate is connected to the cooling pipe, and an in-plate flow path (310) through which the refrigerant flows in a direction orthogonal to the stacking direction is formed in the cooling plate.
The area of the cooling plate when viewed from the stacking direction is larger than that of the cooling pipe.
It is in the power converter (1) in which the cooling plate is interposed between the two electronic components.

In the power conversion device, a flow path in the plate through which the refrigerant flows is formed in the cooling plate.
Therefore, heat exchange can be performed between the refrigerant flowing through the flow path in the plate and the electronic component, and the electronic component can be effectively cooled.

Further, the cooling plate of the power conversion device has a larger area when viewed from the stacking direction than the cooling pipe.
Therefore, the area where the cooling plate and the electronic component are in thermal contact can be increased, and the electronic component can be efficiently cooled.
Further, if the area of the cooling plate is increased, a large in-plate flow path can be formed in the cooling plate. Therefore, the cooling efficiency of electronic components can be improved.
Further, when the area of the cooling plate is increased, the contact area with air increases, so that the heat dissipation efficiency of the cooling plate can be improved. Therefore, the temperature of the cooling plate can be lowered, and the electronic components can be cooled more efficiently.

As described above, according to the above aspect, it is possible to provide a power conversion device capable of further improving the cooling efficiency of electronic components.
The reference numerals in parentheses described in the scope of claims and the means for solving the problem indicate the correspondence with the specific means described in the embodiments described later, and limit the technical scope of the present invention. It's not a thing.

The perspective view of the power conversion apparatus which omitted the capacitor module and the like in Embodiment. The plan view of the power conversion apparatus which omitted some parts in an embodiment. The plan view of the power conversion apparatus by the plane perpendicular to the Z direction in embodiment. The perspective view of the power conversion apparatus which omitted the cooling plate and the like in embodiment. The plan view of the power conversion apparatus which omitted the case and the like in Embodiment. FIG. 3 is a perspective view of a power conversion device in which a current sensor or the like appears in the embodiment. The perspective view of the power conversion apparatus which omitted the case, the capacitor module, etc. in embodiment. FIG. 3 is a perspective view of a power conversion device in which a capacitor module or the like appears in the embodiment. The perspective view of the power conversion apparatus which omitted the case and the like in Embodiment. Another perspective view of the power conversion device in the embodiment, in which the case and the like are omitted. The circuit diagram of the power conversion device in the embodiment. The perspective view of the power conversion apparatus which removed the lower case cover in embodiment. The perspective view of the power conversion apparatus seen from diagonally below with the case and the like omitted in the embodiment. Another perspective view of the power conversion device in the embodiment as viewed from diagonally below, omitting the case and the like. The front view of the power conversion apparatus which represented the DC-DC converter in embodiment. The plan view of the power conversion apparatus by the plane perpendicular to the Y direction in an embodiment. FIG. 16 is a cross-sectional view taken along the line AA of FIG. FIG. 16 is a cross-sectional view taken along the line BB of FIG. The perspective view of the power conversion apparatus which showed the bottom wall part in embodiment. An enlarged perspective view of the vicinity of the engaging claw on the upper side of the cooling plate in the embodiment. An enlarged perspective view of the vicinity of the engaging claw on the lower side of the cooling plate in the embodiment. Another enlarged perspective view of the vicinity of the engaging claw on the upper side of the cooling plate in the embodiment. The front view of the cooling plate in an embodiment. Front view of the case in the embodiment. Top view of the case in the embodiment. The perspective view of the cooler in an embodiment. Another perspective view of the cooler in the embodiment. The front view of the refrigerant flow path of a cooling pipe in an embodiment. The front view of the cooling pipe overlapped with the semiconductor module in embodiment. FIG. 2 is a cross-sectional view of a cooling pipe corresponding to a cross section taken along the line CC of FIG. 29. An exploded sectional view of a cooling pipe according to an embodiment. Sectional drawing of the laminated body in embodiment. A perspective view of a part of the inner fin in the embodiment. FIG. 3 is a cross-sectional view of a part of the inner fin corresponding to the cross-sectional view taken along the line DD of FIG. 31. An enlarged perspective view of a part of the inner fin in the embodiment. FIG. 34 is a cross-sectional view taken along the line EE of FIG. The explanatory view of the manufacturing method of a cooler in an embodiment. FIG. 3 is a perspective view of the bass bass in the embodiment. The perspective view of the bass bassy in the state which removed the mold part in embodiment. The perspective view of the high potential bus bar in an embodiment. The perspective view of the low potential bus bar in an embodiment. The plan view of the bass bassy in the state which removed the mold part in an embodiment. FIG. 5 is a side view of the bass bassy with the mold portion removed in the embodiment. Front view of the bass bassy in the embodiment. A side view of the bass bassy in the embodiment. FIG. 3 is a partial cross-sectional view of the bass bassy in the cross section corresponding to the arrow taken along the line FF of FIG. 38. The perspective view explaining the manufacturing method of the bass bassy in embodiment. The side view explaining the manufacturing method of the bass bassy in embodiment. The front view explaining the manufacturing method of the bass bassy in embodiment. The perspective view of the bass bassy before removing the holding pin in an embodiment. The perspective view of the inside of the semiconductor module in embodiment. The perspective view of the semiconductor module in an embodiment. A perspective view of a part of FIG. 51. An exploded perspective view of the inside of the semiconductor module in the embodiment. Perspective plan view of the semiconductor module in the embodiment. Partial perspective plan view of the semiconductor module in the embodiment. The rear view of the inside of the semiconductor module in an embodiment. Top view of the semiconductor module in the embodiment. FIG. 55 is a cross-sectional view taken along the line G1-G1. FIG. 5 is a cross-sectional view of a semiconductor module according to an embodiment, in which a module main body is added to FIG. 59. An enlarged view of a main part of FIG. 59. An enlarged view of the semiconductor element of FIG. 59. FIG. 55 is a cross-sectional view taken along the line G2-G2. FIG. 6 is a cross-sectional view of a semiconductor module according to an embodiment, in which a module main body is added to FIG. 63. An enlarged view of a main part of FIG. 63. FIG. 55 is a cross-sectional view taken along the line G3-G3. An enlarged view of a main part of FIG. 66. FIG. 55 is a cross-sectional view taken along the line G4-G4. An enlarged view of a main part of FIG. 68. Three views of the semiconductor module in the embodiment. The circuit diagram of the semiconductor module in the embodiment. The perspective view of the current sensor in an embodiment. H1 arrow view of FIG. 72. H2 arrow view of FIG. 72. H3 arrow view of FIG. 72. H4 arrow view of FIG. 72. H5 arrow view of FIG. 72. H6 arrow view of FIG. 72. An exploded perspective view of the current sensor in the embodiment. FIG. 78 is a cross-sectional view taken along the line I1-I1 of FIG. FIG. 78 is a cross-sectional view taken along the line I2-I2 of FIG. The perspective view of the reactor case in an embodiment. The J1 arrow view of FIG. 82. The J2 arrow view of FIG. 82. The J3 arrow view of FIG. 82. The J4 arrow view of FIG. 82. The J5 arrow view of FIG. 82. FIG. 3 is a cross-sectional view of the reactor and the bottom wall portion in the embodiment. The perspective view of the capacitor module in an embodiment. The figure which looked at the capacitor module in an embodiment from the top. In FIG. 89, the mold resin and the discharge resistance substrate are omitted. FIG. 91, K1 arrow view. FIG. 91, K2 arrow view. FIG. 91 is a diagram in which the negative electrode bus bar is partially omitted. The figure which looked at the negative electrode bus bar, the positive electrode smoothing bus bar, the positive electrode filter bus bar, and the insulating member in an embodiment from the bottom. The figure which looked at the negative electrode bus bar, the positive electrode smoothing bus bar, the positive electrode filter bus bar, and the insulating member in an embodiment from above. FIG. 5 is a perspective view of a negative electrode bus bar, a positive electrode smoothing bus bar, a positive electrode filter bus bar, and an insulating member according to an embodiment, in which the negative electrode bus bar is partially omitted. The perspective view of the case cover and the capacitor module in an embodiment. FIG. 6 is a schematic cross-sectional view showing a case cover, a capacitor module, a discharge resistance substrate, a reactor, a semiconductor module, and a cooler in the embodiment. The perspective view of the laminate, the cooling plate, and the DC-DC converter in the embodiment. FIG. 3 is a cross-sectional view of a holding structure of a DC-DC converter in the embodiment. The plan view of the holding structure of a DC-DC converter in an embodiment. The plan view of the holding structure of the DC-DC converter which removed the DDC facing wall in embodiment. FIG. 3 is a cross-sectional view of a holding structure of a DC-DC converter showing a modified form of the embodiment. FIG. 3 is a cross-sectional view of a holding structure (No. 1) of the DC-DC converter in the embodiment. The plan view of the holding structure (the 2) of the DC-DC converter which removed the DDC facing wall in embodiment. FIG. 3 is a cross-sectional view of a holding structure (No. 3) of the DC-DC converter in the embodiment. The plan view of the holding structure (the 3) of the DC-DC converter which removed the DDC facing wall in embodiment. FIG. 4 is a cross-sectional view of a holding structure (No. 4) of the DC-DC converter in the embodiment.

The power conversion device according to the embodiment of the present disclosure will be described in detail below with reference to the drawings. First, first, the technical problem to be improved and the technical problem in the power conversion device according to the present embodiment and this technical problem. The outline of the technology for solving the problem will be explained. The power conversion device according to the embodiment of the present disclosure takes into consideration the following technical viewpoints in order to meet the needs of the world.

One technical viewpoint is a miniaturization technology, that is, a technology for suppressing the increase in size of the power conversion device due to an increase in the power to be converted. Another technical point of view is a technique for improving the reliability of a power converter. Yet another technical aspect is the technology for improving the productivity of power converters. The power conversion device according to the embodiment of the present disclosure has been commercialized based on the above-mentioned three viewpoints and a viewpoint that integrates these viewpoints. In addition, the content described in the text in the embodiment is a specific example of the technology related to the above technical viewpoint, and the power conversion device according to the embodiment of the present disclosure is described in the above technical viewpoint and described below. It contains multiple technical matters based on technical ideas. The features of the power converter from each viewpoint are listed and outlined below.

A. Miniaturization technology By adopting a configuration in which a plurality of power semiconductor modules (appropriately simply referred to as "semiconductor modules") are cooled from both sides, it contributes to the improvement of cooling performance. In particular, in the present embodiment, as an example, a technique of indirect cooling via a heat conductive member such as a cooling pipe wall between the semiconductor module and the refrigerant is described.

It is desirable that the pressing force acts evenly between the cooler and the heat radiating surface of the semiconductor module. This point is especially important in the case of indirect cooling. In particular, it is important to secure the contact area between the cooler and the semiconductor module as the size of the semiconductor module increases with the increase in electric power. In the present embodiment, as an example, the contact area is secured by evenly applying the pressing force in the stacking direction of the cooler and the semiconductor module. That is, it is required to contribute to the improvement of the cooling performance of the semiconductor module by equalizing the pressing force. It should be noted that the proportion of the volume occupied by the semiconductor module in the power conversion device increases not only when the size of the single module is increased but also when the number of semiconductor modules is used to cope with the increase in current. Further, as the allowable current amount increases, the insulation inside the semiconductor module is secured and the heat capacity is secured, so that the configuration of the semiconductor module becomes complicated and the size of the semiconductor module tends to increase.

In the power conversion device of the present embodiment, it is also considered to reduce the dead space as much as possible by concentrating the parts in one direction. In addition, it contributes to the miniaturization of the entire power conversion device by improving the efficiency of the arrangement of electrical wiring. On the other hand, in optimizing the electrical wiring arrangement, securing insulation from other electrical parts and metal parts (that is, securing spatial insulation distance and securing creepage insulation) is a contradictory issue, and countermeasures are considered. There is also a part that is. In addition, not only the electrical wiring is arranged in the dead space for miniaturization, but also the part where the optimum arrangement is made in consideration of shortening of the electrical wiring and safety (connection workability, vibration countermeasures in the usage environment, etc.). There is also.

Further, in the power conversion device of the present embodiment, the overall layout is such that the heat generating parts can be efficiently cooled. That is, the heat diffusion path and heat dissipation area from the current-carrying parts such as semiconductor parts, coils, capacitors, and electric wiring, which are heat-generating parts, are secured, and the thermal resistance is optimized. In addition, the optimum arrangement for improving the cooling performance by cooling the atmosphere is also considered. It is also effective to cool a plurality of electronic components having different calorific values in the same manner, but some configurations are adopted in which the cooling amount is changed according to the components and parts having different calorific values. As a result, the cooling efficiency of the entire power converter is optimized. In detail, the optimum component arrangement, refrigerant flow method, and refrigerant flow path are considered in consideration of the flow rate distribution of the refrigerant flowing in the refrigerant flow path, water flow resistance, pressure loss, flow velocity, and refrigerant characteristics that change depending on the refrigerant temperature and viscosity. The structural design of is made. By improving or optimizing the cooling performance in this way, it is possible to reduce the size of electrical parts and heat-generating parts.

Further, by improving the heat transfer coefficient between the members and the heat conductivity of each member, the heat dissipation area is expanded, the heat dissipation path is shortened, the contact thermal resistance is reduced, and the like.

B. Reliability improvement technology Some measures have been taken to improve the sealing performance between the inside of the case of the power converter and the outside of the power converter. The parts layout is also taken into consideration to ensure safety even if moisture or foreign matter gets mixed in from the outside of the case.
In addition, measures have been taken to prevent refrigerant leakage from the refrigerant flow path and to prevent damage to parts. In other words, it is devised to ensure the strength against the connection load that connects the inside and the outside of the case, and to prevent the parts from being damaged by the connection stress between the parts housed inside the case (for example, the control circuit board and various terminals). Has been done.

It is a power conversion device that has load resistance and vibration resistance, and has a structure that does not easily cause damage or misalignment of parts. For example, devise from the viewpoint of the arrangement relationship between heavy parts (reactors, capacitors, etc.) and lightweight parts, and the arrangement relationship between parts where a large current flows (especially where motor current flows) and parts where loads and vibrations are likely to be applied. It has been subjected.

In addition, measures have been taken to suppress leakage current from current-carrying parts such as semiconductor modules, reactors, and current sensors.
Due to the above-mentioned one-way component assembly, increasing the resonance frequency is an issue. For this, the holding / fastening position and fastening method of each part and the optimum arrangement including heavy parts are being studied.

In addition, ensuring insulation, which is a contradictory issue caused by component consolidation and miniaturization, is addressed by spatial insulation and the intervention of an insulating layer. However, if the distance between parts is made too large, the cooling performance will deteriorate, so the balance between the heat dissipation path and the insulation distance is also taken into consideration. Furthermore, by appropriately arranging the insulating members and devising the material and thickness of the insulating members, heat dissipation is not hindered and a balance between ensuring the insulating property and the cooling property is secured.

Further, the EMC (electromagnetic compatibility) against electromagnetic noise caused by high frequency switching in the semiconductor module has been devised as follows. That is, the high-voltage portion and the low-voltage portion in the power conversion device are arranged via metal parts. In addition, in order to suppress the influence of noise on the outside of the case, measures such as inserting metal parts at necessary places are taken. That is, measures such as arranging metal parts in places where there is a concern about radiation of electromagnetic noise to the outside through openings, gaps, and resin parts are taken. In addition, reduction of the loop area of high-voltage wiring is taken into consideration.

Further, in each part, a structure considering low inductance is adopted. That is, consideration is given to the proximity arrangement of current paths flowing in opposite directions, the shortening of electrical wiring, and the accompanying wiring layout and component arrangement. Along with this, ensuring insulation becomes a contradictory issue. Therefore, measures have been taken to ensure insulation as appropriate.

It is considered to prevent current imbalance by preventing variations in inductance. This leads to prevention of variation in the life of each component.
Ingenuity has also been made to ensure the electrical insulation of semiconductor modules from various perspectives. That is, creepage insulation, spatial insulation, and insulation inside the mold outside the resin mold portion are taken into consideration. With regard to creepage insulation, for example, adjustments have been made to the resin material, mold dimensions, terminal dimensions, and the like. With regard to spatial insulation, for example, adjustments have been made to adjust the distance between terminals and the dimensions of mold recesses (dimensions of recesses formed in the resin mold portion between terminals). Regarding the insulation inside the mold, for example, the size and shape of the collector lead frame, the size and shape of the emitter heat sink, the size between the collector and the emitter, the size between the bonding wires, the size between the bonding wire and the power terminal, the size between the bonding wire and the collector, The dimensions between the bonding wire and the emitter have been devised.

Further, the laminated body of the semiconductor module and the cooling pipe is devised so as to realize stable pressurization in the laminating direction. As a result, the cooling performance of the semiconductor module is ensured and the integral holding of a plurality of parts in the laminated body is realized.
It is also considered to secure the life of the solder at the connection portion of each component. That is, it is possible to ensure durability against changes in the refrigerant temperature and the semiconductor element temperature in the power cycle.

In addition, the layout and internal structure of the heating element are considered so that the heat dissipation path can be dispersed.
In addition, ensuring connection reliability at the connection portion of each component is also considered. That is, the connection between the power terminal of the semiconductor module and the high-potential bus bar and the low-potential bus bar, the connection between the high-potential bus bar and the low-potential bus bar and the capacitor terminal, the connection between the semiconductor module and the output bus bar, and the output bus bar and the reactor terminal. The reliability of these connections is ensured at the connection with the bus.

C. Productivity improvement technology The assembly tolerances of the components are designed as appropriate. As a result, for example, the ease of connection between the signal terminal and the control board and the ease of connection between the power terminal and the bus bar are achieved.
In addition, the assembly gap, that is, the clearance between the components is also considered. As a result, it is possible to easily insert a welding jig or the like at the time of welding, insert a fastening member and a tool at the time of fastening the fastening member, or insert a component to be assembled.
In addition, some measures have been taken to simplify the connection structure. That is, the layout of parts, the appropriate arrangement of welded parts, and the simplification of the shapes of component parts are being attempted. Furthermore, in part, unidirectional connection direction is also considered.
In addition, a component structure suitable for mass production is also considered. For example, the number of parts has been reduced by integrating functions, integrally molded products have been adopted, and the shapes of component parts have been simplified.

Next, an embodiment of the power conversion device will be described in detail with reference to the drawings.

The power conversion device 1 of this embodiment is an in-vehicle power conversion device to be mounted on a vehicle such as a hybrid vehicle or an electric vehicle. As shown in FIG. 3, the power conversion device 1 of the present embodiment includes a plurality of semiconductor modules 2, a reactor 4 as a first electronic component, and a DC-DC converter 6 as a second electronic component. Further, as shown in FIG. 16, the power conversion device 1 has a capacitor module 70 in which a smoothing capacitor 71 and a filter capacitor 72 are integrated. As shown in FIG. 11, a booster circuit 100 that boosts the voltage of the DC power supply 180 is configured by a part of the semiconductor module 2a, the reactor 4, and the filter capacitor 72.

Further, the inverter circuit 101 is composed of another semiconductor module 2b and a smoothing capacitor 71. By switching the semiconductor element 20 in the semiconductor module 2b, the DC power after boosting is converted into AC power. As a result, the three-phase AC motor as the AC load 181 can be driven to drive the vehicle. In the present embodiment, the two inverter circuits 101 connected to the two AC loads 181 are connected in parallel to the booster circuit 100.

Further, the DC-DC converter 6 is connected in parallel to the filter capacitor 72. The DC-DC converter 6 is configured to step down the voltage of the DC power supply 180 and charge the low-voltage battery 182.

As will be described later, the semiconductor module 2 includes a main body 21 incorporating the semiconductor element 20 (see FIG. 11), a power terminal 22 protruding from the main body 21, and a control terminal 23. The power terminal 22 includes a positive electrode terminal 22p and a negative electrode terminal 22n to which a DC voltage is applied, and an AC terminal 22a that is electrically connected to an AC load 181. Further, the control terminal 23 is connected to the control circuit board 171. The control circuit board 171 controls the switching operation of the semiconductor element 20.

Further, as shown in FIGS. 1 to 5, the power conversion device 1 of the present embodiment accommodates a laminate 10, a reactor 4, and other parts obtained by laminating a plurality of semiconductor modules 2 and a plurality of cooling pipes 3. A case 11 is provided.
The stacking direction of the semiconductor module 2 and the cooling pipe 3 in the laminated body 10 is appropriately referred to as the X direction. The cooling pipes 3 are arranged on both main surfaces of the semiconductor module 2 so as to sandwich the semiconductor module 2 from the X direction. The power terminals 22 in the plurality of semiconductor modules 2 are formed so as to project in the same direction. The protruding direction of the power terminal 22 is a direction orthogonal to the X direction. The protruding direction of the power terminal 22 is appropriately referred to as the Z direction. Further, a direction orthogonal to both the X direction and the Z direction is appropriately referred to as a Y direction.

A cooling plate 31 is arranged on one side of the laminated body 10 in the X direction in a state of being separated from the laminated body 10. In the X direction, the side on which the cooling plate 31 is arranged with respect to the laminated body 10 is appropriately referred to as the front side, and the opposite side thereof is appropriately referred to as the rear side. However, the expressions before and after are for convenience, and do not particularly limit the orientation of the power conversion device 1. Further, in the Z direction, the side on which the power terminal 22 of the semiconductor module 2 protrudes is referred to as an upper side for convenience, and the opposite side thereof is referred to as a lower side for convenience. The upper and lower expressions are also for convenience, and do not particularly limit the orientation of the power conversion device 1.

The cooling plate 31 has a thick flat plate-shaped top plate 311 and a rear plate 312 which is overlapped and joined to the rear side surface of the top plate 311. The rear plate 312 is smaller in thickness than the top plate 311. The rear plate 312 has an outer peripheral edge joined to the top plate 311 and a flow path forming portion formed inside the outer peripheral edge so as to bulge rearward from the outer edge. As a result, a refrigerant flow path is formed between the top plate 311 and the rear plate 312.

A reactor 4 is interposed between the cooling plate 31 and the laminated body 10. Further, a DC-DC converter 6 is provided on the cooling plate 31 opposite to the side on which the reactor 4 is arranged, that is, on the front side. The reactor 4 and the DC-DC converter 6 are cooled by the cooling plate 31, respectively.

The case 11 has a rear wall portion 112 arranged on the rear side of the laminated body 10 in the X direction, and a front wall portion 111 arranged on the front side of the reactor 4. Further, the case 11 has a pair of side wall portions 113 and 114 connecting the front wall portion 111 and the rear wall portion 112 at both ends in the Y direction. The pair of side wall portions 113 and 114 are arranged on both sides of the laminate 10 and the reactor 4 in the Y direction. As shown in FIGS. 16 to 18, a capacitor module 70 is also arranged in the case 11. The capacitor module 70 is arranged above the laminate 10 and the reactor 4 in the Z direction.
As shown in FIGS. 4 and 6, an opening 111a is formed in the front wall portion 111 of the case 11. A part of the cooling plate 31 is in contact with the front surface of the front wall portion 111. The pair of pipes 33 penetrate the opening 111a of the front wall portion 111 in the X direction.

As shown in FIG. 3, a pressurizing member 16 is arranged between the rear wall portion 112 of the case 11 and the laminated body 10. The pressurizing member 16 pressurizes the laminate 10 toward the reactor 4. As a result, the laminate 10 is fixed in the case 11 while ensuring the contact pressure between the semiconductor module 2 and the cooling pipe 3.

In the laminated body 10, the two cooling pipes 3 adjacent to each other in the X direction are connected by a connecting pipe 301. The connecting pipe 301 is provided at both ends of the cooling pipe 3 in the Y direction.

Further, as shown in FIGS. 1 to 6, the cooling plate 31 is connected to the introduction pipe 321 for introducing the refrigerant and the outlet pipe 322 for leading out the refrigerant.

As shown in FIG. 2, two pipes 33 (33a, 33b) are provided in the case 11. These two pipes 33 are interposed between the cooling plate 31 and the laminate 10. The pipe 33 includes an introduction side pipe 33a connected to the introduction pipe 321 and a discharge side pipe 33b through which the refrigerant passing through the cooling pipe 3 passes.

The two pipes 33 connect the cooling plate 31 and the cooling pipe 3 arranged at the position closest to the reactor 4 in the X direction among the plurality of cooling pipes 3 constituting the laminated body 10. The introduction side pipe 33a is connected to one end of the cooling plate 31 and the cooling pipe 3 in the Y direction. The lead-out side pipe 33b is connected to the other end of the cooling plate 31 and the cooling pipe 3 in the Y direction. The length of the two pipes 33 in the X direction is longer than that of the connecting pipe 301. A reactor 4 is arranged between these two pipes 33.

When the refrigerant is introduced into the introduction pipe 321, the refrigerant appropriately passes through the introduction side pipe 33a and the connecting pipe 301 and is distributed to the cooling plate 31 and the refrigerant flow paths of the plurality of cooling pipes 3. After that, the refrigerant merges, passes through the connecting pipe 301 and the outlet pipe 33b as appropriate, and is led out from the outlet pipe 322. In this way, the semiconductor module 2, the reactor 4, and the DC-DC converter 6 are cooled by flowing the refrigerant through the refrigerant flow paths of the cooling plate 31 and the cooling pipe 3.

As shown in FIGS. 3 and 5, the reactor 4 and the DC-DC converter 6 are in contact with the cooling plate 31. A seal structure such as a resin O-ring is not particularly formed between the cooling plate 31 and the introduction pipe 321 and the outlet pipe 322 connected to the cooling plate 31. On the other hand, as shown in FIGS. 3 and 7, an O-ring is arranged between the front lid 116 arranged outside the cooling plate 31 and the introduction pipe 321 and the outlet pipe 322 connected to the front lid portion 116. .. As a result, a seal structure is formed between the outer peripheral surfaces of the introduction pipe 321 and the outlet pipe 322 and the front lid portion 116. This seal structure prevents the refrigerant from leaking to the outside of the case.

If the O-ring is provided on the cooling plate 31, the cooling plate 31 must have high strength in order to withstand the reaction force of the O-ring, and the cooling performance may deteriorate. Therefore, as described above, the seal structure by the O-ring has a structure in which the cooling plate 31 is not loaded. The O-ring is arranged so that its elastic force acts in the forward direction, that is, in the direction toward the outside of the power conversion device 1.

As shown in FIGS. 4 and 15, the case 11 has a protruding wall portion 115 protruding forward from the front wall portion 111 in the X direction. The protruding wall portion 115 projects to the front side of the cooling plate 31. The protruding wall portion 115 has a direction orthogonal to the X direction of the DC-DC converter 6 and the B terminal 191 (terminals connecting the DC-DC converter 6 and an external low-voltage DC battery) arranged on the front side of the cooling plate 31. Therefore, it is formed so as to surround the entire circumference. Further, a part of the introduction pipe 321 and a part of the outlet pipe 322 are arranged inside the protruding wall portion 115. As shown in FIG. 3, a front lid portion 116 that closes the space inside the protruding wall portion 115 is attached to the protruding end of the protruding wall portion 115.

As a result, the inner space of the protruding wall portion 115 is partitioned from other spaces. Then, in the inner space of the protruding wall portion 115, parts such as the DC-DC converter 6 and the B terminal 191 are housed together with the cooling plate 31, a part of the introduction pipe 321 and a part of the outlet pipe 322. As a result, the atmospheric temperature in the inner space can be efficiently lowered, and the above-mentioned parts can be efficiently cooled. Further, it is possible to suppress the superposition of electromagnetic noise from the outside on the parts arranged in the internal space.

As shown in FIGS. 2 and 3, a part of the rear wall portion 112 has a bearing surface 112d that supports the pressurizing member 16 from the rear. The bearing surface 112d is flush with each other in the region facing the pressurizing member 16. The bearing surface 112d is a plane substantially orthogonal to the X direction.

The pressurizing member 16 is arranged on the rear side of the laminated body 10 and pressurizes the laminated body 10 in the X direction. The reactor 4 is configured to receive the pressing force of the pressurizing member 16 on the front side surface via the laminated body 10. The reactor 4 has a protruding portion that abuts on the case 11 at a position close to the rear side surface. This protruding portion abuts on the contacted portion formed on the case 11 from the X direction. As described above, the structure is such that the contacted portion of the case 11 receives the load received by the reactor 4 on the front side surface. With such a structure, the pressing force is not applied to the entire reactor 4 more than necessary. Further, it is desirable that the pressing force of the pressurizing member 16 is evenly applied to the entire semiconductor module 2. In particular, in this embodiment, the semiconductor module 2 is a module on which four switching elements are mounted, and tends to be large as a whole. Therefore, in particular, by equalizing the acting load over the entire semiconductor module 2, it is possible to suppress the cooling variation of the four switching elements.

Further, if a pressing force acts on the reactor 4 more than necessary, the size of the reactor 4 will be increased. In this case, the power conversion device 1 as a whole tends to be large. Therefore, the case 11, the reactor 4, the laminate 10, and the pressurizing member 16 are arranged as described above so that an excessive pressing force does not act on the reactor 4.

As shown in FIGS. 1 and 6, the cooling plate 31 has a protruding plate portion 313 that partially protrudes upward in the Z direction in the region between the introduction pipe 321 and the outlet pipe 322 in the Y direction. As shown in FIGS. 5, 7, and 15, the protruding plate portion 313 is formed at a location corresponding to the arrangement of electronic components of the DC-DC converter 6. That is, when viewed from the X direction, the protruding plate portion 313 overlaps a part of the electronic component of the DC-DC converter 6, and the entire electronic component overlaps the cooling plate 31.

As a result, the electronic components of the DC-DC converter 6 can be efficiently cooled.
Further, as shown in FIG. 1, the opening 111a formed in the front wall portion 111 of the case 11 is also formed at a position corresponding to the protruding plate portion 313 in the X direction. As shown in FIG. 16, the projecting plate portion 313 and the discharge resistance substrate 172 are arranged at positions where they overlap in the X direction via the opening 111a. A refrigerant flow path (in-plate flow path) is formed inside the cooling plate 31. However, the refrigerant flow path is not formed inside the projecting plate portion 313.

With the above configuration, the protruding plate portion 313 of the cooling plate 31 can contribute to the cooling of the discharge resistance substrate 172. On the other hand, no refrigerant is circulated in the protruding plate portion 313. This is because if the refrigerant flow path is extended to the protruding plate portion 313, the discharge resistance substrate 172 will be overcooled in terms of thermal design. That is, even if the refrigerant flow path is not extended to the protruding plate portion 313, the heat of the atmosphere around the discharge resistance substrate 172 is released to the refrigerant by heat transfer through the protruding plate portion 313, and the temperature of the discharge resistance substrate 172 is increased. The rise can be sufficiently suppressed.

As shown in FIG. 2, on the inner surface of the front wall portion 111 of the case 11, the upper end portion in the Z direction, that is, the end portion on the side where the reactor 4 is inserted at the time of assembly, has a first recess in the wall thickness direction. 111b is formed. Further, the protruding direction of the protruding plate portion 313 of the top plate 311 faces upward in the Z direction. As shown in FIG. 4, a second recess 111c partially enlarged on the upper side in the Z direction is formed in the opening 111a of the front wall portion 111 so as to correspond to the protruding plate portion 313. Further, when viewed from the Z direction, at least a part of the front wall portion 111 forming the first recess 111b is arranged at a position overlapping with the top plate 311.

When the reactor 4 is inserted, a first recess 111b is formed in the case 11 as a relief portion so as not to collide with the case 11. In the front wall portion 111 of the case 11, the portion forming the first recess 111b protrudes forward from the other portions. Then, this time, it is necessary to prevent the portion of the front wall portion 111 from interfering with the top plate 311. In particular, since the protruding direction of the protruding plate portion 313 of the top plate 311 is the side where the reactor 4 is inserted, it is necessary to avoid interference between the protruding plate portion 313 and the front wall portion 111. Therefore, a second recess 111c is formed in the opening 111a of the front wall portion 111 at a position corresponding to the protruding plate portion 313.

As shown in FIGS. 20 to 23, thin-walled portions 311a, which are thinner than other portions, are partially formed near both ends of the top plate 311 in the Y direction. These thin-walled portions 311a have a shape in which the rear side surface is cut out with respect to other portions. A plurality of thin-walled portions 311a are formed on the upper side and the lower side in the Z direction of the top plate 311. A plurality of claw portions 312a are formed on the rear plate 312 forming the cooling plate 31 together with the top plate 311. The claw portion 312a of the rear plate 312 is engaged with the thin portion 311a of the top plate 311. Then, on the rear side surface of the top plate 311, the outer peripheral edge of the rear plate 312 is brazed and joined.

As the rear side plate 312, the same one as the outer shell plate 341 constituting the cooling pipe 3 in the laminated body 10 can be used. When the laminate 10 is manufactured, the rear side plate 312 and the top plate 311 can be temporarily fixed at the claw portion 312a and the thin wall portion 311a, and then the outer peripheral edge can be brazed and joined over the entire circumference.

As shown in FIG. 17, a bus bassy 5 is arranged between the laminate 10 and the capacitor module 70 in the case 11. As will be described later, the bus bus assembly 5 integrates the high-potential bus bar 51, the low-potential bus bar 52, and the relay bus bar 53 (see FIGS. 38 to 46). The high-potential bus bar 51 and the low-potential bus bar 52 each electrically connect a plurality of semiconductor modules 2 and a capacitor module 70. The high-potential bus bar 51 and the low-potential bus bar 52 have capacitor-side terminals 512, 522, and 532 that are electrically connected to the capacitor module 70. As shown in FIG. 2, the capacitor side terminals 512, 522, and 532 are arranged in the vicinity of one side wall portion 113 of the case 11. Of the pair of side wall portions 113, 114, the side wall portion in which the capacitor side terminals 512, 522, and 532 are arranged in the vicinity is appropriately referred to as a first side wall portion 113, and the other side wall portion. Is appropriately referred to as a second side wall portion 114.

As shown in FIG. 6, an opening 113a is formed in a portion of the first side wall portion 113 of the case 11 facing the capacitor side terminals 512, 522, and 532. As a result, it is possible to achieve both miniaturization of the power conversion device 1 and ease of fastening work. In particular, by arranging the capacitor module 70 on the upper side of the laminate 10 in the Z direction, miniaturization in the Y direction, that is, in the longitudinal direction of the semiconductor module 2 can be effectively realized.

The bus bar assembly 5 is integrated with a plurality of bus bars in a resin-molded state. As shown in FIGS. 2, 5, 6 and 7, the bus bus assembly 5 is arranged so as to cover the semiconductor module 2 from the upper side in the Z direction in most of the arrangement area of the semiconductor module 2. On the other hand, in most of the arrangement regions of the reactor 4, the bass bassies 5 do not overlap in the Z direction. By resin-molding the high-potential bus bar 51 and the low-potential bus bar 52, it is difficult to apply the heat generated by these bus bars to the coil terminal 41 of the reactor 4. Further, by preventing the reactor 4 and the bass bassy 5 from overlapping when viewed from the Z direction, the thermal influence of the bass bassy 5 on the reactor 4 can be further suppressed.

The reactor 4 and the plurality of semiconductor modules 2 are arranged in a row in the X direction. The coil terminal 41 of the reactor 4 is formed on the side close to the power terminal 22 of the semiconductor module 2 in the X direction. As a result, the connection structure between the power terminal 22 and the coil terminal 41 can be simplified.

As shown in FIGS. 1, 2, and 5, the coil terminal 41 of the reactor 4 is arranged closer to the cooling pipe 3 than the center in the X direction. That is, the distance between the cooling pipe 3 and the coil terminal 41 in the X direction is shorter than the distance between the center of the reactor 4 and the coil terminal 41 in the X direction. The reactor 4, which is a heavy object and a large component, is difficult to efficiently cool to the center even if the refrigerant flow paths, that is, the cooling pipe 3 and the cooling plate 31 are arranged on both sides. Therefore, the coil terminal 41 is arranged at a position as close to the refrigerant flow path as possible. This facilitates heat dissipation inside the reactor 4 via the coil terminal 41. Further, in the case 40 of the reactor 4, the rear wall portion in the X direction, that is, the wall portion on the side closer to the semiconductor module 2 is thickened, and the frontmost semiconductor module 2 in the laminate 10, that is, the most reactor. The semiconductor module 2 on the side closer to 4 is in contact with the cooling pipe 3 through which the most upstream refrigerant in the laminated body 10 flows. Therefore, the semiconductor module 2 in the front stage of the laminated body 10 tends to have an excessive cooling effect as a thermal design. Therefore, in order to balance the cooling property, the coil terminal 41 is arranged at a position close to the rear side of the reactor 4 in the X direction.

The reactor 4 is arranged on the front side in the X direction of the laminated body 10. The coil winding portion in the reactor 4 is arranged between the introduction side pipe 33a and the outlet side pipe 33b. As a result, the ambient temperature around the coil winding portion of the reactor 4 can be lowered. As a result, the coil winding portion of the reactor 4 can be efficiently cooled by the low temperature atmosphere.

As shown in FIGS. 1 and 2, the rear wall portion 112 of the case 11 has a bulging wall portion 112a formed so as to be separated rearward from the pressurizing member 16 in a part in the Y direction thereof. Inside the bulging wall portion 112a, an arrangement space 112b in which the capacitor bus bar 75 protruding from the capacitor module 70 is arranged is formed. The arrangement space 112b is partially partitioned by a space in which the laminated body 10 is arranged and a partition wall 112c. A part of the bearing surface 112d that supports the pressurizing member 16 is formed on the front surface of the partition wall 112c. Further, the DC connector connecting portion 112e is formed so as to project further rearward from a part of the bulging wall portion 112a. The DC connector connection portion 112e is a portion that is open to the rear and connects the DC connector 192 connected from the outside to the capacitor bus bar 75.

As shown in FIGS. 1, 2, and 6, a part of the sensor fixing portion 118 to which the current sensor 8 in the case 11 is fixed (in this embodiment, of the two sensor fixing portions 118 located at two locations in the X direction). 1) is formed by projecting a part of the rear wall portion 112 to the rear side. The sensor fixing portion 118 protrudes rearward from the partition wall 112c in the X direction, and is housed in front of the rear end of the bulging wall portion 112a. As a result, the dead space of the external space of the case 11 is effectively utilized on the rear end side of the case 11. As a result, it is possible to secure the arrangement area of the current sensor 8 while ensuring the mountability of the power conversion device 1 on the vehicle or the like. Further, the sensor fixing portion 118 is formed near the upper end portion in the Z direction of the case 11. This makes it easy to attach the current sensor 8.

The case 11 has a plurality of device fixing portions 117 for fixing the power conversion device 1 to a vehicle or the like. In this embodiment, it has four device fixing portions 117. The four device fixing portions 117 are formed near the upper end portion of the case 11 in the Z direction. Further, when viewed from the Z direction, the four device fixing portions 117 are formed near the four corners of the case 11. Of the four device fixing portions 117, three are formed so as to project outward in the Y direction with respect to the case 11. One of the four device fixing portions 117 projects rearward in the X direction with respect to the case 11.

That is, among the four corners of the case 11, the device fixing portion 117 formed in the vicinity of the second side wall portion 114 and the rear wall portion 112 is arranged so as to project rearward of the rear wall portion 112. On the second side wall portion 114, an AC connector connecting portion 114e for connecting an AC connector electrically connected to the AC load is arranged. Of the two device fixing portions 117 formed on the second side wall portion 114 side, the rear device fixing portion 117 projects rearward of the rear wall portion 112. In the device fixing portion 117, the DC connector connecting portion 112e projects toward the side protruding from the rear wall portion 112. Further, the device fixing portion 117 is housed on the front side of the rear end of the DC connector connecting portion 112e.
By arranging the device fixing unit 117 as described above, interference between the AC connector and the device fixing unit 117 is suppressed, and the area that tends to be a dead space is effectively utilized, thereby realizing miniaturization of the entire power conversion device 1. Can be done.

As shown in FIGS. 16, 17, 18, and 19, in the case 11, the bottom wall that partitions the area where the laminate 10, the reactor 4, and the like are arranged and the area where the control circuit board 171 is arranged in the Z direction. It has a part 119. In the bottom wall portion 119, a through hole 119a is formed in a part of the region between the reactor 4 and the introduction side pipe 33a when viewed from the Z direction. The signal terminal 84 of the current sensor 8 is configured to penetrate through the through hole 119a. Since the bottom wall portion 119 is formed between the laminate 10 and the like and the control circuit board 171, it is possible to suppress noise interference between the laminate 10 side and the control circuit board 171 side. Further, the through hole 119a provided in the bottom wall portion 119 can facilitate the positioning of the signal terminal 84 of the current sensor 8.

A voltage detection line (not shown) connected to the capacitor is arranged in a region (see FIGS. 2 and 3) between the lead-out side pipe 33b and the reactor 4 in the Y direction. The control wiring is arranged in a region formed between the fastening portion 45 of the reactor 4, the side surface of the reactor case 40, and the outlet side pipe 33b. A through hole 119b through which the control wiring penetrates is formed in a part of the bottom wall portion 119 of the case 11 that overlaps this region in the Z direction.
As a result, the dead space in the case 11 can be effectively utilized. Further, by arranging the voltage detection line of the capacitor in the region surrounded by the fastening portion 45 of the reactor 4, the side surface of the reactor case 40, and the lead-out side pipe 33b, the voltage detection line of the capacitor is arranged with other electronic components and the like. It is easy to prevent noise interference with. In addition, the voltage detection line of the capacitor can be easily positioned. Further, since the signal terminal 84 of the current sensor 8 and the voltage detection line of the capacitor are arranged on the opposite sides of the reactor 4, they can be arranged apart from each other.

As shown in FIGS. 4 and 5, the B terminal 191 is arranged adjacent to the DC-DC converter 6. In particular, the B terminal 191 is arranged on the opposite side of the introduction pipe 321 from the DC-DC converter 6.
As a result, the connection distance between the DC-DC converter 6 and the B terminal 191 is shortened to facilitate the simplification of the connection structure between the two, and from the viewpoint of cooling performance, the DC-DC converter 6 and the B terminal are also used. The arrangement with 191 is optimized.

The B terminal 191 is arranged on the side closer to the AC connector connection portion 114e with respect to the DC-DC converter 6. When viewed from the X direction, the AC connector connected to the AC connector connecting portion 114e and the B terminal 191 are arranged so as to partially overlap each other.
The AC connector tends to have a larger connection structure than the DC connector 192. Therefore, the space adjacent to the AC connector connection portion 114e tends to be a dead space. Therefore, by arranging the B terminal 191 as described above, the dead space can be effectively utilized.

As shown in FIGS. 2 and 3, the reactor 4 is arranged so that the two wall portions 42L and 42T facing the X direction are in contact with the cooling pipe 3 and the cooling plate 31, respectively. The fastening portion 45 of the reactor 4 is formed so as to project in the Y direction. That is, the fastening portions 45 provided at the four corners of the reactor 4 are not the wall portions 42L and 42T in contact with the cooling pipe 3 or the cooling plate 31, but the wall portions 42S and 42C of the reactor case 40 in the Y direction. It is formed so as to protrude.

Since the reactor 4 is a heavy object, it is necessary to secure a certain size of the fastening portion 45. Therefore, a sufficient space is required at the position where the fastening portion 45 is arranged. If the fastening portions are provided on the wall portions 42L and 42T on the side in contact with the cooling pipe 3 and the cooling plate 31, the cooling function of the cooling pipe 3 and the cooling plate 31 may be impaired. Therefore, the cooling performance of the reactor 4 can be ensured by projecting the fastening portion 45 from the wall portions 42S and 42C in the Y direction.

As shown in FIG. 18, four semiconductor elements 20 are arranged side by side in one direction inside the semiconductor module 2. The direction in which the semiconductor elements 20 are arranged is the stacking direction in which the cooling tube 3 and the semiconductor module 2 are laminated, that is, the direction orthogonal to the X direction and the Y direction. As shown in FIG. 3, the fastening portion 45 of the reactor 4 is formed so as to project from the reactor case 40 in a direction parallel to the arrangement direction of the semiconductor elements 20. Further, the fastening portion 45 of the reactor 4 is formed in the space between the main body portion of the reactor 4 and the pipe 33.
Since the semiconductor module 2 has a configuration in which the four semiconductor elements 20 are built in, the physique of the semiconductor module 2 becomes large, but a dead space is likely to be created between the reactor 4 and the pipe 33. Therefore, the dead space is effectively used as an arrangement space for the fastening portion 45 of the reactor 4, which is a heavy object.

The reactor 4 and the semiconductor module 2 are arranged side by side in the X direction, which is one direction, and are pressurized. The width of the wall portion 42L on the laminated body 10 side of the reactor 4 is equivalent to the width of the semiconductor module 2 in the direction orthogonal to the arrangement direction (that is, the Y direction or the Z direction, or both the Y direction and the Z direction). Or larger than that. Further, inside the semiconductor module 2, all the semiconductor elements are arranged side by side in a direction (Y direction) orthogonal to the arrangement direction. Here, the width of the wall portion 42L of the reactor 4 is a dimension including the fastening portion 45. In particular, when viewed from the X direction, it is desirable that the module main body 21 of the semiconductor module 2 has a size and a positional relationship so as to fit inside the contour of the contact surface of the reactor 4 that abuts the laminate 10. ..
As the physique of the semiconductor module 2 increases, uniforming the pressing force on the semiconductor module 2 becomes an even more important issue. Therefore, the width of the wall portion 42L of the reactor 4, which is a heavy object, is made larger than the width of the semiconductor module 2 to make the pressing force of the semiconductor module 2 uniform.

The flow path cross-sectional area of the refrigerant flow path in the cooling pipe 3 is larger than the flow path cross-sectional area of the refrigerant flow path in the cooling plate 31. As a result, the amount of refrigerant flowing through the cooling pipe 3 in contact with the semiconductor module 2 increases, so that the cooling efficiency of the semiconductor module 2 can be improved. Then, among the cooling pipe 3 and the cooling plate 31 that sandwich the reactor 4 from the X direction, the cross-sectional area of the refrigerant flow path in the cooling pipe 3 on the semiconductor module 2 side is made larger. As a result, the cooling efficiency of the semiconductor module 2 can be improved.

The refrigerant flow path in the cooling plate 31 is formed between the plate-shaped top plate 311 and the rear plate 312 joined to the rear surface. That is, the refrigerant flow path of the cooling plate 31 is arranged on the reactor 4 side of the top plate 311. The DC-DC converter 6 is arranged close to the introduction pipe 321 through which the low temperature refrigerant passes, and is cooled even under a low atmospheric temperature. Therefore, of the DC-DC converter 6 and the reactor 4 arranged across the cooling plate 31, it is desirable that the reactor 4 is easier to exchange heat with the cooling plate 31. Therefore, the cooling plate 31 is configured such that the refrigerant flow path is arranged on the surface of the top plate 311 on the reactor 4 side. Further, with such a configuration, the flat surface of the top plate 311 can be opposed to the DC-DC converter 6 having a contact area with the cooling plate 31 larger than that of the reactor 4.

As shown in FIGS. 6, 7, and 8, the current sensor 8 is arranged along the side wall portion 114 in the case 11. That is, the current sensor 8 is arranged in the vicinity of the AC connector connecting portion 114e formed on the side wall portion 114. The current sensor 8 is arranged so that its longitudinal direction is along the upstream end of the introduction side pipe 33a and the cooling pipe 3 in the cooler in the Y direction.
Further, in the high-potential bus bar 51, the low-potential bus bar 52, and the relay bus bar 53, the arrangement terminal group 55 of the condenser side terminals 512, 522, and 532 is located at the downstream end of the outlet side pipe 33b and the cooling pipe 3 in the cooler in the Y direction. It is arranged along the line.

A part of the output bus bar 15 is arranged in the Z direction so as to face the laminated body 10. Further, a part of the bass bassy 5 is also arranged in the Z direction so as to face the laminated body 10. The area where the bus bus bar 15 faces the cooling pipe 3 of the laminated body 10 is larger than the area where the output bus bar 15 faces the cooling pipe 3 of the laminated body 10.

As described above, the output bus bar 15 is arranged on the upstream side of the cooling pipe 3 in the laminated body 10, and the bus bus assembly 5 is arranged on the downstream side of the cooling pipe 3 in the laminated body 10.
Since the current flowing through the output bus bar 15 is larger than that of the bus bar assembly 5, the output bus bar 15 is more likely to concentrate heat than the bus bar assembly 5 provided with the high potential bus bar 51 and the low potential bus bar 52 in response to the demand for a large current. .. Therefore, by arranging the output bus bar 15 in the vicinity of the upstream side of the cooling pipe 3, efficient cooling is realized as a whole.

As shown in FIG. 8, a plurality of capacitor elements are arranged in parallel in the capacitor module 70. In each capacitor element, one electrode surface faces the side where the semiconductor module 2 is arranged in the Z direction, and the other electrode surface faces the side opposite to the semiconductor module 2 in the Z direction. The bus bars connected to the respective electrode surfaces are formed so as to extend parallel to the electrode surfaces. Each bus bar is connected to the high-potential bus bar 51 and the low-potential bus bar 52 at terminals exposed on the side surface of the capacitor module 70, as shown in FIG.

By placing the capacitor module 70 on the upper side of the semiconductor module 2 in the Z direction, the noise due to the high voltage current in the capacitor module 70 is less likely to affect the control terminal 23 of the semiconductor module 2. On the other hand, in such a configuration, visibility at the time of connecting the semiconductor module 2 and the capacitor module 70 and the connection reliability associated therewith become problems. On the other hand, the direction in which the electrode surface of the capacitor element faces and the direction in which the terminals connected to the high-potential bus bar 51 and the low-potential bus bar 52 face are substantially orthogonal to each other as described above, that is, the Z direction and the Y direction. The connection work is facilitated by setting the positional relationship so that it is in the direction. As a result, the connection reliability between the bus bus assembly 5 and the capacitor module 70 is ensured.

As shown in FIGS. 8 to 10, the fastening position between the capacitor bus bar 75 and the bus bus assembly 5 is in the Y direction opposite to the side where the current sensor 8 is arranged via the capacitor element. Further, the bus bus assembly 5 approaches the power terminal 22 (22P, 22N) of the semiconductor module 2 in the Y direction from the side opposite to the current sensor 8, and the output bus bar 15 approaches the power terminal 22 (22A) from the current sensor 8 side. That is, as shown in FIG. 6, the bus bus assembly 5 and the output bus bar 15 are arranged so as to approach the power terminal 22 from opposite sides in the Y direction. As a result, the connection structures of the plurality of bus bars to the semiconductor module 2 are prevented from being too dense, and noise interference between the two is suppressed. Further, the bus bus assembly 5 and the output bus bar 15 are separated from the power terminal 22 on both sides in the Y direction to appropriately suppress interference between the connection wirings.

As shown in FIGS. 8, 9, and 10, between the connector side terminal 751 of the condenser bus bar 75 connected to the DC connector and the laminate 10, the introduction pipe 321 and the outlet pipe 322 in the cooler are opposite to each other. A cooling pipe 3 at the end on the side is interposed. The flat plate 343 is thicker than the cooling pipes 3 in the other stages. Further, the connector side terminal 751 has a portion thereof whose main surface is formed so as to face the cooling pipe 3 from the X direction. As a result, the noise caused by the current flowing through the connector side terminal 751 is shielded by the cooling pipe 3 to suppress the influence of the noise on other parts. Further, the heat of the connector side terminal 751 can be dissipated to the cooling pipe 3 via the surrounding atmosphere.

As shown in FIG. 3, a metal wall is interposed between the connector-side terminal 751 of the condenser bus bar 75 and the laminated body 10. This metal wall is a partition wall 112c, which is a part of the case 11. The main surface of the partition wall 112c faces the main surface of the cooling pipe 3. The main surface of the partition wall 112c also faces the main surface of the connector side terminal 751 of the capacitor module 70. As a result, the partition partition 112c can obtain the effect of shielding noise caused by the current flowing through the connector-side terminal 751. Further, the heat of the connector side terminal 751 can be dissipated to the partition wall 112c, and the heat can be dissipated to the cooling pipe 3. Therefore, the cooling effect of the capacitor module 70 via the connector side terminal 751 can be obtained.

As shown in FIGS. 8, 9, and 10, the control terminal 23 of the semiconductor module 2 projects to the cooling pipe 3 on the opposite side of the condenser module 70, the current sensor 8, and the bus bus assembly 5. As a result, it is possible to suppress the noise caused by the high voltage current in the capacitor and the bus bus assembly 5 from affecting the control terminal 23 side. Further, the low-voltage wiring connected to the control terminal 23 and the high-voltage wiring such as the connection wiring to the capacitor module 70 are arranged on opposite sides of the cooler to simplify the connection structure of each. I'm trying.

As shown in FIG. 17, a high-potential bus bar 51 and a low-potential bus bar 52 partially molded with resin are arranged between the capacitor module 70 and the semiconductor module 2. Further, the capacitor module 70 is arranged so that the main surfaces of the bus bus assembly 5 face each other. As a result, the thermal interference between the capacitor module 70 and the semiconductor module 2 is suppressed.

As shown in FIGS. 12 and 16, the control circuit board 171 is arranged so as to straddle the arrangement area of the semiconductor module 2 and the arrangement area of the reactor 4 when viewed from the Z direction. Further, the case 11 has a bottom wall portion 119 that partitions a space in which the control circuit board 171 is arranged and a space in which the laminated body 10 and the reactor 4 are arranged. However, the above-mentioned through holes 119a and 119b are formed in the bottom wall portion 119. Further, as shown in FIGS. 16, 17, 18, 19, and 25, the bottom wall portion 119 is also formed with an opening 119c formed in a part of the arrangement region of the laminated body 10. From this opening 119c, the control terminal 23 of the semiconductor module 2 projects into the arrangement space of the control circuit board 171.

Further, as shown in FIG. 12, the control circuit board 171 is fixed to the bottom wall portion 119 by a fastening member. The fastening points (fastening portions 171a) are evenly arranged over the entire main surface of the control circuit board 171 in the spreading direction. The fastening portion 171a is provided not only at the four corners of the control circuit board 171 but also at the four sides, but also at a portion inside from the side.

By providing the fastening portion 171a in this way, the vibration resistance of the control circuit board 171 is improved. That is, for example, the vibration resistance of the control circuit board 171 is required on the assumption that the vehicle vibration is transmitted to the power conversion device 1. With respect to this vibration resistance, it is effective to fasten and fix the control circuit board 171 evenly over the entire spreading direction of the main surface thereof. At the same time, noise shielding from the laminated body 10 to the control circuit board 171 becomes possible.
Further, the pressing force of the pressurizing member 16 acts on the bottom wall portion 119 via a part of the laminated body 10 and the reactor 4. Therefore, it is necessary for the bottom wall portion 119 to have sufficient strength to withstand this load. Therefore, as described above, the bottom wall portion 119 is formed by keeping the opening to the minimum necessary.

As shown in FIGS. 7, 8, 9, and 14, the signal terminal 84 of the current sensor 8 is arranged so as not to overlap the semiconductor module 2. Further, the signal terminal 84 is arranged between the reactor 4 and the introduction side pipe 33a. Further, the signal terminal 84 is arranged in a space formed between the fastening portion 45 of the reactor 4 and the wall portion 42s. Further, as shown in FIG. 16, the signal terminal 84 extends in a direction opposite to the protruding direction of the coil terminal 41 of the reactor 4.
As a result, the influence of noise from the semiconductor module 2 to the signal terminal 84 is suppressed. The influence of noise from the coil terminal 41 to the signal terminal 84 is also suppressed. Further, since the signal terminal 84 is surrounded by a metal member, noise from the outside to the signal terminal 84 can be suppressed. Further, since the signal terminal 84 is arranged in the dead space in the case 11, miniaturization becomes easy.

The load support portion 44 of the reactor 4 is arranged so as to overlap the control terminal 23 of the semiconductor module 2 when viewed from the X direction (see FIGS. 16 and 19). A bottom wall portion 119 of the case 11 is formed on the front side of the load support portion 44 in the X direction (that is, the side opposite to the control terminal 23). By arranging the load support portion 44 in front of the control terminal 23 in this way, it is possible to suppress the influence of external noise from the front on the control terminal 23.

The load support portion 44 of the reactor 4 is formed on the side closer to the cooling pipe 3 than the coil winding portion. Further, the load support portion 44 is integrally formed with the thick wall portion 42L that is in contact with the cooling pipe 3. Further, the load support portion 44 is in contact with the bottom wall portion 119 fixed to the control circuit board 171.
As a result, the load support portion 44 has a function of receiving the load of the pressurizing member 16 on the bottom wall portion 119 and a function of securing a heat dissipation path from the reactor 4 to the case 11. Further, the cooling pipe 3 cools the bottom wall portion 119 via the load support portion 44, which also contributes to the cooling of the control circuit board 171.

As shown in FIG. 16, the discharge resistance substrate 172 attached to the capacitor module 70 is formed at a position overlapping the protruding plate portion 313 of the top plate 311 which is a metal member when viewed from the X direction. As a result, the noise from the front in the X direction is suppressed from affecting the discharge resistance substrate 172. In addition, in order to secure the insulation distance between the discharge resistance substrate 172 and other electronic components and suppress noise interference, the structure is devised such as the arrangement relationship between the discharge resistance substrate 172 and its peripheral components.

As shown in FIG. 13, the discharge resistance substrate 172 is arranged at a position opposite to the connector side terminal 751 of the capacitor bus bar 75 with the laminated body 10 interposed therebetween in the X direction. By arranging the connector side terminals 751 which are both heating elements and the discharge resistance substrate 172 on opposite sides of the laminated body 10 including the plurality of cooling pipes 3, thermal interference between them is suppressed.

In particular, the power conversion device 1 of this embodiment has a structure in which one main surface of the capacitor module 70 is fastened to the case 11 as shown in FIGS. 16, 17, and 18. Therefore, both the discharge resistance substrate 172 and the connector side terminal 751 of the condenser bus bar 75 are arranged on the main surface opposite to the main surface on the fastening side to the case 11. Then, depending on the arrangement, there is a possibility of thermal interference between the connector side terminal 751 and the discharge resistance substrate 172. Therefore, the above positional relationship can effectively prevent thermal interference between the connector-side terminal 751 and the discharge resistance substrate 172.

As shown in FIG. 19, ribs 119r are formed on a part of the bottom wall portion 119 of the case 11. The rib 119r is formed on the bottom wall portion 119 at a position in front of the contacted portion with which the load supporting portion 44 of the reactor 4 abuts in the X direction. As a result, the bottom wall portion 119 can sufficiently withstand the load received from the pressurizing member 16 via the load support portion 44.
Further, when viewed from the X direction, as shown in FIG. 16, the load support portion 44 and the pressurizing member 16 do not overlap. Therefore, the load received by the reactor 4 can be released to the bottom wall portion 119. Further, the pressurizing member 16 does not overlap the load supporting portion 44 but overlaps the coil arrangement region in the X direction so that a part of the load by the pressurizing member 16 acts on the coil arrangement region of the reactor 4. It is arranged like this.

The connection terminals of the capacitor bus bar 75 with the bus bus assembly 5 (high potential bus bar 51, low potential bus bar 52, relay bus bar 53) are arranged on the side surface of the capacitor module 70 corresponding to the position where the smoothing capacitor 71 is arranged. Further, the semiconductor module 2 is arranged at a position facing the main surface of the capacitor module 70.
As a result, it becomes easy to shorten the current path length from the connection portion of the capacitor module 70 with the bus bus assembly 5 and the electrode of the smoothing capacitor 71. Further, since the connection portion between the capacitor module 70 and the bus bus assembly 5 is arranged on the end face in the Y direction, it is easy to ensure visibility during the connection work. As a result, the connection reliability between the capacitor module 70 and the bus bus assembly 5 can be improved.

In the laminated body 10, the cooling pipe 3 and the semiconductor module 2 are laminated to each other so as to have the following arrangement relationship. That is, first, as shown in FIGS. 17 and 18, a cooling pipe 3 is arranged at the power terminal 22 of the semiconductor module 2 so that the refrigerant supply path 36 faces the X direction. Then, in the Y direction, the negative electrode heat sink 24N and the lower arm AC heat sink 24AN of the semiconductor module 2 are arranged on the side close to the supply section 361 of the cooling tube 3, and the positive electrode heat sink 24P and the upper arm AC heat sink 24AP are close to the discharge section 381. Placed on the side. The variable displacement portion 362 formed in the refrigerant supply path 36 is formed at a position corresponding to the positive electrode heat sink 24P and the upper arm AC heat sink 24AP. The positive electrode terminal 22P is formed at a position corresponding to the end portion of the positive electrode heat sink 24P and the upper arm AC heat sink 24AP on the side close to the negative electrode heat sink 24N and the lower arm AC heat sink 24AN in the Y direction.

As described above, by arranging the refrigerant supply paths 36 facing each other in the power terminals 22, the refrigerant supply paths 36 are provided with a function of cooling the power terminals 22. Here, in the Y direction, the power terminals are not arranged on the side of the positive electrode heat sink 24P and the upper arm AC heat sink 24AP close to the negative electrode heat sink 24N and the lower arm AC heat sink 24AN. Therefore, even if the variable displacement portion 362 is formed in the refrigerant supply path 36 to reduce the cross-sectional area of the flow path, the cooling effect of the power terminal is not reduced.

The positive electrode bus bar 75P of the capacitor module 70 and the high potential bus bar 51 of the bus bus assembly 5 face each other via their respective mold resins. Further, the low potential bus bar 52 of the bus bus assembly 5 and the positive electrode heat sink 24P and the upper arm AC heat sink 24AP of the semiconductor module 2 face each other via their respective mold resins. With such an arrangement, the inductance can be reduced.

The main surface of the positive electrode bus bar 75P of the capacitor module 70 is arranged adjacent to the main surface of the case cover 131. Further, the negative electrode bus bar 75N is arranged so that the main surface partially faces the cooling pipe 3. The positive electrode bus bar 75P of the capacitor module 70 is connected to the case cover 131 only via the mold resin. On the other hand, in the bus bar assembly 5, the high potential bus bar 51 is located on the side farther from the low potential bus bar 52 with respect to the cooling pipe 3. The negative electrode bus bar 75N of the condenser module 70 has an air layer on the outside via the mold resin, while the low potential bus bar 52 is arranged on the side closer to the high potential bus bar 51 with respect to the cooling pipe 3 in the bus bus assembly 5. ing.

As a result, the cooling efficiency of the condenser bus bar 75 and the bus bus assembly 5 can be easily improved. That is, the negative electrode bus bar 75N of the capacitor module 70 can dissipate heat to the case cover 131 side. Along with this, the low-potential bus bar 52 connected to the negative electrode bus bar 75N can also dissipate heat to the case cover 131 side via the negative electrode bus bar 75N. On the other hand, the high-potential bus bar 51 easily dissipates heat to the cooling pipe 3. Along with this, the positive electrode bus bar 75P of the capacitor module 70 connected to the high potential bus bar 51 can also dissipate heat to the cooling pipe 3 side via the high potential bus bar 51.

The semiconductor module 2 projects a power terminal 22 at a position facing the refrigerant supply path 36 in the cooling pipe 3, and a control terminal 23 projecting at a position facing the refrigerant discharge path 38 in the cooling pipe 3. As a result, the power terminal 22 having a relatively large amount of heat generation can be cooled more positively than the control terminal 23. As a result, the cooling efficiency of the entire semiconductor module 2 can be improved.

The current sensor 8 is arranged in a space adjacent to the capacitor module 70 in the Y direction and adjacent to the laminated body 10 in the Z direction. The output bus bar 15 is shaped so as to approach the AC terminal 22A of the semiconductor module 2 from the Y direction while avoiding the capacitor module 70.

As shown in FIGS. 1 and 2, in the case 11, the space in which the capacitor module 70 and the laminated body 10 are arranged opens upward in the Z direction in substantially the entire region thereof. That is, the space has an open end on the side opposite to the bottom wall portion 119. The open end is closed by the case cover 131 as shown in FIGS. 4, 16, 17, and 18. The capacitor module 70 is arranged on the open end side with respect to the laminated body 10. The capacitor module 70 is fixed to the case cover 131.

When assembling the power conversion device 1, the capacitor module 70 is attached to the case cover 131 to form a sub-assembly, separately from the step of assembling the laminate 10 and other parts into the case 11. Then, by assembling this sub-assembly to the case 11, the capacitor module 70 can be arranged in the case 11 and the case cover 131 can be fixed to the case 11. Therefore, the productivity of the power converter 1 is improved.

In the case 11, the space on the side where the control circuit board 171 is arranged with respect to the bottom wall portion 119 also opens downward in the Z direction in substantially the entire region thereof. This open end is also closed by the case cover 132. The lower case cover 132 is arranged so as to cover the control circuit board 171 and is fixed to the case 11.

Further, as shown in FIG. 24, a part of the front wall portion 111 is formed on both sides in the Z direction with respect to the opening 111a formed in the front wall portion 111. That is, the opening 111a does not penetrate the upper end or the lower end of the case 11 in the Z direction. By doing so, it is possible to prevent the opening 111a from affecting the watertightness between the case covers 131 and 132 and the case 11. That is, since the front wall portions 111 are present on both sides of the opening 111a in the Z direction, a continuous sealing surface is formed over the entire circumference at any of the open ends on both sides in the Z direction in the case 11. Can be done. As a result, as shown in FIGS. 4, 16, 17, and 18, the case covers 131 and 132 are brought into close contact with each of the sealing surfaces over the entire circumference, so that the open end can be reliably closed. A sealing member such as a gasket may be interposed between each sealing surface and the case covers 131 and 132.

As will be described later, the cooling pipe 3 is formed with two refrigerant flow paths divided in the X direction. The two refrigerant channels allow the refrigerant to flow in opposite directions. One of these refrigerant flow paths is adapted so that the refrigerant collides with the end face on the side where the capacitor module 70 and the current sensor 8 are arranged in the Z direction. The end face thereof is arranged so as to face the capacitor module 70, the current sensor 8, and the bus bus assembly 5. Further, a part of the low-potential bus bar 52 and a part of the output bus bar 15 which are not resin-molded are arranged at positions facing the points where the refrigerant collides.
In this way, by arranging electronic components such as the capacitor module 70, the current sensor 8, and each bus bar at positions facing the points where the refrigerant collides in the cooling pipe 3, the cooling performance of these electronic components is improved. There is.

As shown in FIG. 18, the semiconductor module 2 corresponds to the end of the positive electrode heat sink 24P and the upper arm AC heat sink 24AP in the Y direction on the side opposite to the side where the capacitor side terminals 512, 522, and 532 of the bus bassy 5 are arranged. The positive electrode terminal 22P is formed at the position where the positive electrode terminal 22P is formed. The bus bus assembly 5 is formed so as to approach the positive electrode terminal 22P from the capacitor side terminals 512, 522, and 532 in the Y direction.

The heat sink connection portion 25 (see FIG. 18) in the semiconductor module 2 and the partition portion 371 (see FIG. 17) in the cooling pipe 3 face each other in the X direction. That is, a partition portion 371 through which the refrigerant does not pass is formed at a position facing a position where heat exchange with the semiconductor module 2 is difficult as compared with the portion where the heat sink is exposed.

The width of the partition portion 371 of the cooling pipe 3 in the Z direction is larger than the width of the heat sink connection portion 25 in the Z direction. The heat sink connection portion 25 is made shorter than the heat sink in the Z direction for insulation from the power terminal 22. Therefore, the heat sink does not exist at a position adjacent to the heat sink connection portion 25 in the Z direction. Therefore, since it is difficult to contribute to cooling even if the refrigerant flows at the position facing the portion, the partition portion 371 is extended to this portion as well.

As shown in FIGS. 16, 17, and 18, a part of the power terminal 22 protrudes from the resin. The main surface of a part of the protruding portion faces the cooling pipe 3. Further, the insulating material 12 made of a ceramic plate is larger than the width of the module main body 21 of the semiconductor module 2 in the protruding direction of the power terminal 22. Further, at the position facing the power terminal 22 in the X direction, the refrigerant flows along the arrangement direction of the plurality of power terminals 22 arranged in the Y direction.
Thereby, the cooling performance of the power terminal 22 can be improved. Further, an eddy current is generated at a portion of the cooling pipe 3 facing the plurality of power terminals 22 so as to cancel the magnetic flux caused by the currents flowing through the plurality of power terminals 22. Thereby, the effect of reducing the inductance can also be obtained.

Of the plurality of power terminals 22, the AC terminal 22A is arranged on the side closest to the supply unit 361. The positive electrode terminal 22P and the negative electrode terminal 22N are arranged on the downstream side of the AC terminal 22A. The area where the bus bus assembly 5 faces the laminated body 10 is larger than the area where the output bus bar 15 and the laminated body 10 face each other (see FIG. 6). As described above, since the area of the output bus bar 15 facing the laminated body 10 including the plurality of cooling pipes 3 is small, the AC terminal 22A connected to the output bus bar 15 is placed on the side closer to the supply unit 361 of the cooling pipe 3, that is, the refrigerant. By arranging it on the upstream side of the supply path 36, efficient cooling is realized as a whole.

As will be described later, the control terminal 23 of the semiconductor module 2 has two curved portions 231 and 232 between the base end portion on the side close to the semiconductor element 20 and the tip end portion on the protruding side (FIG. 51). , See FIG. 63). The bending directions of both bending portions 231 and 232 are opposite to each other. Specifically, two curved portions 231 and 232 are curved on opposite sides in the X direction. The cooling pipe 3 and the control terminal 23 face each other at a position closest to the curved portion 231 on the proximal end side.
In this way, in order to improve the cooling performance, a part of the control terminal 23 and the cooling pipe 3 are opposed to each other. On the other hand, if the control terminal 23 and the cooling pipe 3 face each other in the X direction, a problem of ensuring insulation arises. Further, the curved portions 231 and 232 are required for ensuring vibration resistance in a structure in which the control terminal 23 and the power terminal 22 are projected on opposite sides in the Z direction. Here, if both of the two curved portions 231 and 232 are curved in the same direction in the X direction, the distance between the cooling pipes 3 in the X direction is increased in order to secure insulation from the cooling pipe 3. Need to be done. Then, the entire laminated body 10 may become large. Therefore, by bending the two curved portions 231 and 232 in opposite directions, it is easy to secure the insulating property of the control terminal 23 while preventing the laminated body 10 from becoming large in size.

<Cooler>
The cooler will be described in detail mainly with reference to FIGS. 26 to 37.
The cooling plate 31 and the plurality of cooling pipes 3 described above are connected to each other to form one cooler.
First, the cooling pipe 3 in the laminated body 10 will be described in detail below.

As shown in FIGS. 26 and 27, the cooling pipes 3 adjacent to each other in the X direction are connected by connecting pipes 301 at both ends in the Y direction. The connecting pipe 301 communicates the refrigerant flow paths 30 inside the adjacent cooling pipes 3 with each other.

As shown in FIGS. 28 and 29, the cooling pipe 3 is a refrigerant flow path 30, a heat exchange section 37, and a refrigerant supply path 36 and a refrigerant discharge path arranged on both sides in the Z direction with respect to the heat exchange section 37, respectively. It has 38 and. The heat exchange section 37 is a section for exchanging heat between the refrigerant and the module main body section 21. The heat exchange unit 37 is configured so that the refrigerant flows in the Z direction from the refrigerant supply path 36 toward the refrigerant discharge path 38.

By allowing the refrigerant to flow along the lateral direction of the cooling pipe 3 in this way, it is possible to reduce the flow path resistance of the refrigerant as compared with the configuration in which the refrigerant flows along the longitudinal direction of the cooling pipe 3. it can. That is, with the above configuration, it is easy to increase the cross-sectional area of the flow path (that is, the area of the cross section perpendicular to the flow direction of the refrigerant) in the heat exchange unit 37. Therefore, it is possible to reduce the flow path resistance, efficiently distribute the refrigerant, and improve the cooling capacity of the semiconductor module 2 by the refrigerant.

A supply section 361 communicating with the refrigerant supply path 36 and a discharge section 381 communicating with the refrigerant discharge path 38 are formed at both ends of the refrigerant flow path 30 of each cooling pipe 3 in the Y direction. The connecting pipe 301 is connected to the supply unit 361 and the discharge unit 381. Further, the introduction side pipe 33a and the outlet side pipe 33b are connected to the supply part 361 and the discharge part 381 of the cooling pipe 3 arranged at one end in the X direction, respectively.
The semiconductor module 2 is arranged between the cooling pipes 3 adjacent to each other in the X direction.

The refrigerant is introduced from the supply unit 361 into the refrigerant flow path 30 of each cooling pipe 3. The refrigerant introduced into each cooling pipe 3 is first introduced into the refrigerant supply path 36, and is supplied to the heat exchange unit 37 from there. At this time, the refrigerant flows in the Z direction along the inner fin 35 while being distributed in the Y direction. Then, the refrigerant is discharged from the heat exchange unit 37 to the refrigerant discharge path 38. That is, the refrigerant distributed in the Y direction and passing through the heat exchange section 37 rejoins in the refrigerant discharge path 38. The merging refrigerant is discharged from the cooling pipe 3 from the refrigerant discharge path 38 through the discharge section 381. In this way, the semiconductor module 2 is cooled by the refrigerant flowing through each cooling pipe 3.

Between the supply section 361 and the refrigerant supply path 36, a throttle section is provided that throttles the flow of the refrigerant from the supply section 361 and then flows the refrigerant to the refrigerant supply path 36. As a result, the refrigerant can be evenly flowed through the plurality of stacked cooling pipes 3.

In the cooling pipe 3, the refrigerant supply path 36 is arranged on one side in the Z direction, and the refrigerant discharge path 38 is arranged on the other side. As a component other than the semiconductor module 2, there are a capacitor module 70, a control circuit board 171 and the like as components adjacent to each other in the Z direction in the cooling pipe 3 (see FIG. 17). Of these, the direction of the cooling pipe 3 is set so that the refrigerant supply path 36 side faces the side where the component to be particularly cooled is arranged. As a result, the desired component can be cooled by further lowering the ambient temperature on the lower side where the refrigerant supply path 36 through which the lower temperature refrigerant flows is arranged. For example, in the present embodiment, the refrigerant supply path 36 is arranged on the capacitor module 70 side in response to a request to cool the capacitor module 70 as compared with the control circuit board 171.

In this embodiment, the refrigerant supply path 36 overlaps the power terminal 22 in the X direction. The refrigerant discharge path 38 overlaps with the control terminal 23 in the X direction. As a result, the ambient temperature around the power terminal 22 having a larger calorific value can be effectively lowered, and the power terminal 22 can be effectively cooled.

As shown in FIG. 30, the cooling pipe 3 has a pair of outer shell plates 341 and an intermediate plate 342 arranged between the pair of outer shell plates 341. The intermediate plate 342 is sandwiched between a pair of outer shell plates 341 at the outer peripheral portion of the flow path.

The intermediate plate 342 is formed in a flat plate shape. A pair of outer shell plates 341 are joined so as to sandwich the flat plate-shaped intermediate plate 342 from both main surfaces. A refrigerant flow path 30 is formed between the intermediate plate 342 and the outer shell plate 341. Further, an inner fin 35 is arranged between the intermediate plate 342 and the outer shell plate 341.

The inner fin 35 is arranged in the heat exchange section 37 in the refrigerant flow path 30. As shown in FIG. 28, the inner fin 35 is made of a corrugated metal plate having a corrugated cross section orthogonal to the Z direction. A space extending in the Z direction is formed as a part of the refrigerant flow path 30 between the inner fin 35 and the outer shell plate 341 and between the inner fin 35 and the intermediate plate 342. This space is formed linearly in the Z direction.

The outer shell plate 341, the intermediate plate 342, and the inner fin 35 are all made of a metal plate such as an aluminum alloy. The intermediate plate 342 is smaller in thickness than the outer shell plate 341. For example, the thickness of the intermediate plate 342 can be less than half the thickness of the outer shell plate 341. Further, the plate thickness of the inner fin 35 is also smaller than the thickness of the outer shell plate 341. Further, the plate thickness of the inner fin 35 can be made equal to or less than the thickness of the intermediate plate 342. The outer shell plate 341, the intermediate plate 342, and the inner fin 35 are joined to each other by brazing, welding, or the like.

As shown in FIGS. 26 and 27, the cooling pipes 3 arranged at the rear end of the laminated body 10 are different from the other cooling pipes 3 in the laminated body 10 in that they have one outer shell plate 341 and its rear surface. It is composed of one flat plate 343 joined to the side and an inner fin 35 arranged between the outer shell plate 341 and the flat plate 343.

As shown in FIGS. 28 and 29, the area of the inner fin 35 is larger than the area of the heat sink 24 of the semiconductor module 2 when viewed from the X direction. When viewed from the X direction, the heat sink 24 is arranged so as to fit inside the outer peripheral contour of the inner fin 35.
As a result, the entire heat sink 24 can be arranged so as to overlap the inner fin 35 even if the positional deviation of the semiconductor module 2 with respect to the cooling pipe 3 and individual differences in shape are taken into consideration.

Further, in the present embodiment, as shown in FIGS. 28 and 30, the refrigerant flow path 30 of the cooling pipe 3 is formed with the heat exchange portion 37 divided into two locations in the Y direction. That is, the partition portion 371 is formed in the central portion of the heat exchange portion 37 in the Y direction. The partition portion 371 is formed by projecting a part of the outer shell plate 341 toward the intermediate plate 342. Further, the partition portion 371 is formed along the Z direction. The partition portion 371 is formed over the entire area of the heat exchange portion 37 in the Z direction.

An inner fin 35 is arranged in each of the two heat exchange portions 37 separated by the partition portion 371.
As shown in FIGS. 30 and 31, the two inner fins 35 are connected to each other by the fin connecting portion 350. That is, the two inner fins 35 are made of one metal plate. The fin connecting portion 350 is formed in a flat plate shape. Then, the fin connecting portion 350 is arranged in a state of being sandwiched between the partition portion 371 provided on the outer shell plate 341 and the intermediate plate 342. Therefore, when viewed from the X direction, the partition portion 371 is arranged so as to overlap the fin connecting portion 350. Further, integrally metal plates of the inner fin 35 and the fin connecting portion 350 are arranged on both sides of the intermediate plate 342, respectively. The two integrally metal plates are arranged so that the fin connecting portions 350 of each other overlap each other in the X direction with the intermediate plate 342 interposed therebetween.
Further, as shown in FIGS. 28 and 29, the refrigerant supply path 36 has a displacement section 362 in the Y direction in which the dimension in the Z direction gradually decreases as the distance from the supply section 361 increases. The variable displacement portion 362 in the refrigerant supply path 36 is formed in the Y direction from the side closer to the supply portion 361 than the partition portion 371 to the vicinity of the end portion on the discharge portion 381 side.

As described above, since the refrigerant supply path 36 has the variable displacement section 362, the refrigerant can be smoothly supplied from the refrigerant supply path 36 to the heat exchange section 37. That is, by making the pressure loss of the refrigerant in the refrigerant supply path 36 gradually increase in the variable displacement section 362 toward the wake side, the refrigerant from the side closer to the supply section 361 to the heat exchange section 37 side. The supply can be increased. Therefore, the variation of the refrigerant distributed in the Y direction can be further reduced. As a result, it is easy to make the flow rate of the refrigerant uniform in the entire heat exchange unit 37.

On the other hand, the refrigerant discharge path 38 is not provided with an inclined portion such as the variable displacement portion 362. If the refrigerant discharge path 38 is provided with the same shape as the variable displacement portion 362 and has a point-symmetrical shape, the pressure loss will be large even in the region of the refrigerant discharge path 38 near the supply section 361 in the Y direction. It ends up. As a result, it becomes difficult to obtain the above-mentioned effect by the variable displacement portion 362 in the refrigerant supply path 36. Therefore, the refrigerant discharge path 38 has a substantially constant dimension in the Z direction.

Further, the refrigerant discharge path 38 is formed so that the end portion 382 on the supply portion 361 side is displaced from the end portion of the heat exchange portion 37 in the Y direction at a position farther from the supply portion 361.
The end portion 382 of the refrigerant discharge path 38 is formed in a curved shape that is convex outward in a shape seen from the X direction. As a result, the flow of the refrigerant flowing from the heat exchange unit 37 into the refrigerant discharge path 38 can be smoothed even in the vicinity of the end portion 381. Further, also in the transition portion from the supply section 361 to the refrigerant supply path 36 and the transition portion from the refrigerant discharge path 38 to the discharge section 381, the contour shape seen from the X direction is formed in a smooth curved shape. In this way, the flow of the refrigerant flowing while changing the direction in the order of the supply unit 361, the refrigerant supply path 36, the heat exchange unit 37, the refrigerant discharge path 38, and the discharge unit 381 is performed as smoothly as possible.

The position of the inner fin 35 in the Y direction is determined by the partition portion 371 and the fin connection portion 350, and the position of the inner fin 35 in the Z direction is determined at the end of the variable displacement portion 362 and the corner of the end portion 382 of the refrigerant discharge path 38. I have decided. Further, by reducing the flow path cross-sectional area at the partition portion 371, the flow velocity of the refrigerant in the heat exchange portion 37 can be increased and the cooling performance can be improved.

Further, in the cooling pipe 3, the refrigerant flow paths on the opposite sides of the intermediate plate 342 can be provided so that the flow directions of the refrigerants are the same as each other. With such a configuration, the refrigerant supply path 36 having a low refrigerant temperature can be arranged on the same side in the Z direction. As a result, by arranging the component to be cooled in the vicinity of the side where the two refrigerant flow paths 30 on the front and back are arranged, the component can be efficiently cooled.

In the cooling pipe 3, the refrigerant flow paths on the opposite sides of the intermediate plate 342 may be provided so that the flow directions of the refrigerant are opposite to each other. In this case, the structure of the cooling pipe 3 can be symmetrical. Therefore, in this case, it is possible to prevent the cooling pipe 3 from being deformed in a biased manner with respect to the pressing force in the stacking direction.

For example, a refrigerant such as water can be circulated in the refrigerant flow path 30. The refrigerant is not limited to water, for example, natural refrigerant such as ammonia, water mixed with ethylene glycol antifreeze, fluorocarbon refrigerant such as Florinate, chlorofluorocarbon refrigerant such as HCFC123 and HFC134a, methanol, alcohol and the like. Various refrigerants such as alcohol-based refrigerants and ketone-based refrigerants such as acetone can be used.

Further, as shown in FIG. 32, an insulating material 12 made of a ceramic plate having excellent thermal conductivity is interposed between the cooling pipe 3 and the semiconductor module 2. The insulating material 12 and the cooling pipe 3 are laminated and arranged on both main surfaces of the semiconductor module 2. The semiconductor module 2 exposes the heat sink 24 on both main surfaces. An insulating material 12 is contact-arranged on the main surface of the semiconductor module 2 where the heat sink 24 is exposed via grease (not shown). A cooling pipe 3 is contact-arranged on each insulating material 12 via grease (not shown).

The cooling pipe 3 has a raised portion 341a that is raised toward the insulating material 12 on the contact surface with the insulating material 12. When viewed from the X direction, the raised portion is formed so as to fit inside the contour of the main surface of the module main body portion 21 of the semiconductor module 2. Further, when viewed from the X direction, the heat sink 24 is formed so as to fit inside the contour of the raised portion. As a result, it is possible to prevent stress from concentrating on a part of the insulating material 12 while ensuring a large thermal contact area between the cooling pipe 3 and the heat sink 24.

The size of the insulating material 12 in the Z direction is larger than that of the module main body 21 of the semiconductor module 2. Then, in the Z direction, both ends of the insulating material 12 are arranged so as to project from both ends of the module main body 21.
Thereby, the insulation between the cooling pipe 3 and the power terminal 22 and the insulation between the cooling pipe 3 and the control terminal 23 can be ensured.

Further, as shown in FIGS. 26 and 27, the cooling plate 31 arranged at a position away from the laminated body 10 in front of the laminated body 10 is the top plate 311 and the rear plate 312 joined to the rear surface thereof. It is composed of. Further, an intermediate plate is partially interposed between the top plate 311 and the rear plate 312. The refrigerant flow path in the cooling plate 31 is formed between the top plate 311 and the rear plate 312, and the refrigerant comes into contact with the top plate 311 and the rear plate 312. The top plate 311 and the rear plate 312 are joined with the intermediate plate 342 interposed therebetween.

The top plate 311 is formed with a protruding plate portion 313 protruding in the Z direction from the cooling pipe 3 in the laminated body 10. The protruding direction of the protruding plate portion 313 is the same as the protruding direction of the power terminal 22 or the control terminal 23 of the semiconductor module 2. In the present embodiment, the protruding direction of the protruding plate portion 313 is the same as the protruding direction of the power terminal 22 (see FIG. 7).
Further, the refrigerant flow path is not formed in the projecting plate portion 313, and the refrigerant does not flow through this portion. That is, the flow path length of the refrigerant flowing toward the top plate 311 is substantially the same as the flow path length of the refrigerant flowing in the other cooling pipe 3.

FIG. 33 shows a partially enlarged perspective view of the inner fin 35 of the cooling pipe 3. However, this perspective view is a schematic perspective view, and the detailed part is omitted or simplified.
The inner fin 35 has a wavy cross-sectional shape orthogonal to the Z direction, and the vicinity of the apex of the waveform is in contact with the outer shell plate 341 and the intermediate plate 342 (see FIG. 30). The inner fin 35 has a convex shape in one direction in the X direction, a portion in contact with the outer shell plate 341 is a top portion 35a, and a convex shape in the other direction in the X direction, and a portion in contact with the intermediate plate 342 is a bottom portion. Let it be 35b. In the inner fin 35, the portion connecting the top portion 35a and the bottom portion 35b is referred to as a wall surface portion 35c.

The inner fin 35 has a corrugated cross-sectional shape perpendicular to the Z direction because the top 35a and the bottom 35b are alternately arranged via the wall surface 35c. Specifically, the inner fin 35 is configured such that the bottom portion 35b, the wall surface portion 35c, the top portion 35a, the wall surface portion 35c, and the bottom portion 35b are arranged in this order.

Further, when the inner fin 35 is viewed from the X direction, the top portion 35a, the bottom portion 35b, and the wall surface portion 35c have a wavy shape.
As shown in FIG. 34, the wall surface portion 35c has a plurality of convex portions 35d, concave portions 35e, and intermediate portions 35f, respectively. The wall surface portion 35c is viewed from the thickness direction (that is, the X direction) of the cooling pipe 3 by arranging the convex portions 35d and the concave portions 35e alternately via the intermediate portion 35f connecting the convex portions 35d and the concave portions 35e. It has a wavy shape.

The convex portion 35d has a curved shape whose cross-sectional shape perpendicular to the X direction is convex in one direction in the Y direction, and the concave portion 35e has a cross-sectional shape perpendicular to the X direction convex in the other direction in the Y direction. It is curved. The intermediate portion 35f has a linear cross-sectional shape perpendicular to the X direction.
By forming the wall surface portion 35c with such a convex portion 35d, a concave portion 35e, and an intermediate portion 35f, the wall surface portion 35c has a shape that bends in a triangular wave shape in the Z direction when viewed from the X direction.

As shown in FIG. 34, the wall surface portion 35c is formed with a plurality of openings 352 that connect two adjacent small flow paths with the wall surface portion 35c interposed therebetween. In the present embodiment, the opening 352 is formed in a portion extending from the convex portion 35d to the intermediate portion 35f and a portion extending from the concave portion 35e to the intermediate portion 35f.
A guide wall 353 is connected to the wall surface portion 35c, and the inner fin 35 also has a guide wall 353. The guide wall 353 is for improving heat transfer by the front edge effect and guiding the refrigerant to the adjacent small flow path to suppress the occurrence of peeling.

The guide wall 353 is connected to the downstream side of the flow of the refrigerant in one of the two small flow paths connected by the opening 352 among the ends of the wall surface portion 35c around the opening 352, and the wall surface portion 35c. It protrudes from one of the small channels. Further, the tip of the guide wall 353 faces the upstream side of the flow of the refrigerant.

In the present embodiment, as shown in FIG. 34, the convex portion 35d and the guide wall 353, and the concave portion 35e and the guide wall 353 are smoothly connected. Further, in the present embodiment, as shown in FIG. 35, the end portion of the guide wall 353 other than the end portion facing the flow of the refrigerant is connected to the top portion 35a, the bottom portion 35b, or the wall surface portion 35c.

Such an opening 352 and a guide wall 353 can be formed by press working in which a plate-shaped plate used as a material for the inner fin 35 is cut and the cut portion is bent at the same time. In this case, of the portions located near the cut portion, the portion on the upstream side of the refrigerant flow path 30 from the cut portion after processing becomes a part of the wall surface portion 35c, and the portion on the downstream side is raised from the wall surface portion 35c. It becomes the guide wall 353. Further, the portion surrounded by the upstream end of the guide wall 353 and the downstream end of the wall surface portion 35c on the upstream side thereof is the opening 352. Further, the opening 352 and the guide wall 353 may be formed by making a cut in advance in the plate-shaped plate which is the material of the inner fin 35 and pressing the plate with the cut.

As shown in FIG. 34, the guide wall 353 protrudes from the wall surface portion 35c on the convex side of the concave portion 35e in the region R1 in which the refrigerant flowing in the general arrow C direction flows from the convex portion 35d toward the concave portion 35e. .. Further, the guide wall 353 protrudes from the wall surface portion 35c on the convex side of the convex portion 35d in the region R2 in which the refrigerant flows from the concave portion 35e toward the convex portion 35d.

Further, of the flow of the refrigerant in the small flow path, the flow that remains in the same small flow path without being guided by the guide wall 353 to the adjacent small flow path is defined as the main flow, and the flow guided by the guide wall 353 to the adjacent small flow path is defined as a branch flow. , The cross-sectional area of the main stream is larger than the cross-sectional area of the diversion channel.

Further, in the present embodiment, as shown in FIG. 36, the guide wall 353 protrudes into the region R3 of one of the two adjacent small channels with the wall surface portion 35c interposed therebetween, and the refrigerant is transferred to the other small channel. It is guided to the area R4.

Here, the region R3 and the region R4 are a region narrower than a predetermined width and a region wider than a predetermined width formed in each microchannel by changing the width of each microchannel in the Y direction in the X direction, respectively. Is.

The inner fin 35 is manufactured by pressing a metal plate-shaped plate. Therefore, among the narrow channels surrounded by the top 35a, the wall surface 35c, and the intermediate plate 342, the width w1 in the lateral direction of the cooling pipe 3 in the region on the top 35a side is smaller than the width w2 in the region on the intermediate plate 342 side. .. Further, among the narrow flow paths surrounded by the bottom portion 35b, the wall surface portion 35c, and the outer shell plate 341, the width w3 of the region on the bottom portion 35b side in the Y direction is smaller than the width w4 of the region on the outer shell plate 341 side. ..

In the present embodiment, in each microchannel, the regions where the distance from the top 35a and the distance from the bottom 35b are equal to each other in the X direction and are located on both sides of the plane perpendicular to the X direction are defined as regions R3 and R4, respectively. Assuming that the width of the portion where the distance from the top 35a and the distance from the bottom 35b are equal to each other in the X direction (corresponding to the predetermined width described above) is w5, the width of the region R3 is smaller than the width w5, and the width of the region R4 The width is larger than the width w5.

The region R3 is a region sandwiched between this plane and the top 35a or the bottom 35b in the narrow flow path. The region R4 is a region sandwiched between this plane and the outer shell plate 341 or the intermediate plate 342 in the narrow flow path. The straight line L3 in FIG. 36 indicates the boundary between the region R3 and the region R4.

As described above, in the cross section of the inner fin 35 orthogonal to the Z direction, as shown in FIG. 30, mountain portions that are convex on one side in the X direction and valley portions that are concave on one side are alternately arranged. It has multiple fins. Then, as shown in FIG. 28, each fin portion can be a wave fin having a wave shape continuous in the Z direction while meandering in the Y direction in the shape viewed from the X direction. In this case, the end of the fin portion on the refrigerant supply path 36 side is inclined so as to face the upstream side of the refrigerant in the refrigerant supply path 36. Further, the end portion of the fin portion on the refrigerant discharge path 38 side is inclined so as to face the downstream side of the refrigerant in the refrigerant discharge path 38.

As shown in FIG. 37, the cooling pipe 3 in the laminated body 10 is integrally provided with protruding pipe portions 301a and 301b that are open in the X direction and protrude. The adjacent cooling pipes 3 are joined by fitting and brazing the protruding pipe portions 301a and 301b to each other. That is, the above-mentioned connecting pipe 301 is formed by joining two protruding pipe portions 301a and 301b integrally provided with each of the adjacent cooling pipes 3. Specifically, the inner protruding pipe portion 301b, which is the other side of the protruding pipe portion, is fitted inside the outer protruding pipe portion 301a, which is one of the protruding pipe portions.

When joining the protruding pipe portions 301a and 301b to each other, the ring-shaped wax wire 301c is arranged between the outer protruding pipe portion 301a and the inner protruding pipe portion 301b, and one of the adjacent cooling pipes 3 projects inward. Both are fitted so that the pipe portion is fitted into the outer protruding pipe portion of the other cooling pipe 3.

Further, with the spacer jig SP arranged between the adjacent cooling pipes 3, the protruding pipe portions 301a and 301b of the adjacent cooling pipes 3 are fitted to each other. Then, the inner protruding pipe portion 301b is inserted into the outer protruding pipe portion 301a until the cooling surface of the cooling pipe 3 comes into contact with the spacer jig SP.
Next, by melting and hardening the brazing wire, the side walls of the inner protruding pipe portion 301b and the outer protruding pipe portion 301a are joined to each other, and a plurality of cooling pipes 3 are laminated.

<Bass Baassie>
Next, the bus bus assembly 5 will be described with reference to FIGS. 38 to 50.
As shown in FIGS. 38 and 39, the bus bus assembly 5 includes a high-potential bus bar 51, a low-potential bus bar 52, and a relay bus bar 53.
The high-potential bus bar 51 is a bus bar that connects the semiconductor module 2 and the high-potential side electrode of the smoothing capacitor 71. The low-potential bus bar 52 is a bus bar that connects the semiconductor module 2 and the low-potential side electrode of the smoothing capacitor 71. The relay bus bar 53 is a bus bar that connects the filter capacitor 72 and the reactor 4.

The high-potential bus bar 51, the low-potential bus bar 52, and the relay bus bar 53 are electrically insulated from each other and integrated by the mold portion 54 to form a bus bus assembly 5 as shown in FIG. 38.
As shown in FIGS. 39 and 40, the high-potential bus bar 51 has a semiconductor-side high-potential terminal 511 connected to the semiconductor module 2 and a capacitor-side high-potential terminal 512 connected to the smoothing capacitor 71.

As shown in FIGS. 39 and 41, the low-potential bus bar 52 has a semiconductor-side low-potential terminal 521 connected to the semiconductor module 2 and a capacitor-side low-potential terminal 522 connected to the smoothing capacitor 71.
As shown in FIG. 39, the relay bus bar 53 has a reactor-side relay terminal 531 connected to the reactor 4 and a capacitor-side relay terminal 532 connected to the filter capacitor 72.

The length of the relay bus bar 53 in the Y direction is shorter than either the length of the high-potential bus bar 51 or the length of the low-potential bus bar 52. More specifically, in the Y direction, the edge of the relay bus bar 53 on the side closer to the semiconductor module 2 is the capacitor module 70 rather than the terminal connection portion of the high potential bus bar 51 and the low potential bus bar 52 with the semiconductor module 2. It is located on the side of the connection with.

As shown in FIG. 44, the capacitor-side high-potential terminal 512, the capacitor-side low-potential terminal 522, and the capacitor-side relay terminal 532 form an array terminal group 55 arranged so as to be arranged in the X direction. In this embodiment, the arrangement direction is the X direction.
In the array terminal group 55, the capacitor-side high-potential terminal 512 and the capacitor-side low-potential terminal 522 are arranged so as to be adjacent to each other. Further, the capacitor side relay terminal 532 is arranged at one end in the X direction.

The capacitor-side high-potential terminal 512, the capacitor-side low-potential terminal 522, and the capacitor-side relay terminal 532 have terminal contact surfaces that come into contact with each other facing the same direction. In the present embodiment, the X direction is a direction along the terminal contact surface.

As shown in FIG. 40, the high-potential bus bar 51 has a plurality of high-potential terminals 512 on the capacitor side. As shown in FIG. 41, the low-potential bus bar 52 has a plurality of low-potential terminals 522 on the capacitor side. As shown in FIGS. 38, 42, and 44, in the array terminal group 55, the plurality of capacitor-side high-potential terminals 512 and the plurality of capacitor-side low-potential terminals 522 are alternately arranged side by side. Further, the capacitor side relay terminal 532 is arranged at one end in the X direction.

By alternately arranging the plurality of capacitor-side high-potential terminals 512 and the plurality of capacitor-side low-potential terminals 522, it is possible to suppress the bias of the current path in the bus bar. Further, the inductance of the current path in the high-potential bus bar 51 and the low-potential bus bar 52 can be reduced. That is, currents in opposite directions flow through the high potential terminal 512 on the capacitor side and the low potential terminal 522 on the capacitor side. Therefore, by arranging them alternately, the inductance in these current paths can be reduced.

The capacitor module 70 is fixed to the case cover 131 on the surface opposite to the bus bus assembly 5 in the Z direction (see FIGS. 16 to 18). The capacitor-side high-potential terminal 512, the capacitor-side low-potential terminal 522, and the capacitor-side relay terminal 532 each have a tapered surface at their tips. That is, the capacitor-side high-potential terminal 512, the capacitor-side low-potential terminal 522, and the capacitor-side relay terminal 532 are each erected in the Z direction, but at the tip thereof, on the side opposite to the capacitor module 70 in the Y direction. It is tilted toward it. As a result, positioning of the capacitor-side high-potential terminal 512, the capacitor-side low-potential terminal 522, and the capacitor-side relay terminal 532 of the bus bus assembly 5 at the time of fastening to each terminal of the capacitor module 70 becomes easy.

As shown in FIG. 44, in the array terminal group 55, the capacitor-side relay terminal 532 is arranged at a position adjacent to the capacitor-side low-potential terminal 522.
Further, in the present embodiment, as shown in FIGS. 38, 39, 40, 41, and 42, the high-potential bus bar 51 has a plurality of semiconductor-side high-potential terminals 511. Further, the low-potential bus bar 52 has a plurality of semiconductor-side low-potential terminals 521.

As shown in FIG. 40, the high-potential bus bar 51 has a high-potential main body 510 between the semiconductor-side high-potential terminal 511 and the capacitor-side high-potential terminal 512. As shown in FIG. 41, the low-potential bus bar 52 has a low-potential main body portion 520 between the semiconductor-side low-potential terminal 521 and the capacitor-side low-potential terminal 522. As shown in FIG. 39, the relay bus bar 53 has a relay main body portion 530 between the reactor side relay terminal 531 and the capacitor side relay terminal 532.

The main surface of the high-potential main body 510, the main surface of the low-potential main body 520, and the main surface of the relay main body 530 face each other in the same direction, and face the Z direction. The high-potential main body 510, the low-potential main body 520, and the relay main body 530 are each formed in a flat plate shape. The high-potential main body 510, the low-potential main body 520, and the relay main body 530 are arranged in parallel with each other.

The normal direction of the terminal contact surface of each terminal in the array terminal group 55 is a direction intersecting with the Z direction. In particular, in the present embodiment, the normal direction of the terminal contact surface is orthogonal to the Z direction. Here, the orthogonality is not limited to geometrically strict orthogonality, that is, 90 °, and includes a slightly inclined state as long as it can be said to be substantially orthogonal.

Further, as shown in FIG. 46, the high-potential main body 510 and the low-potential main body 520 are laminated and arranged in the Z direction with a gap between them to form the laminated portion 56. The relay main body portion 530 is arranged at a position where it does not overlap with the laminated portion 56 in the Z direction.

The relay main body portion 530 is arranged at a position between both main surfaces 561 and 562 of the laminated portion 56 in the Z direction. Here, both main surfaces of the laminated portion 56 are a main surface 561 on the side opposite to the low potential main body 520 in the high potential main body 510 and a main surface on the opposite side to the high potential main body 510 in the low potential main body 520. It means 562.

Further, at least a part of the relay main body portion 530 in the Z direction may be arranged between both main surfaces 561 and 562 of the laminated portion 56. However, it is preferable that the relay main body portion 530 is housed between both main surfaces 561 and 562 of the laminated portion 56. In particular, in the present embodiment, the relay main body 530 is arranged on the same plane as the low potential main body 520.

As shown in FIG. 42, in the array terminal group 55, when viewed from the Z direction, the plurality of capacitor-side high-potential terminals 512, the plurality of capacitor-side low-potential terminals 522, and the capacitor-side relay terminals 532 are linear in the X direction. It is arranged in.
Further, as shown in FIG. 44, when viewed from the Y direction, the plurality of capacitor-side high-potential terminals 512, the plurality of capacitor-side low-potential terminals 522, and the capacitor-side relay terminals 532 are arranged substantially linearly in the X direction. Has been done.
As a result, the fixing portion 57 can be arranged in the vicinity of the terminal connection point with the heavy capacitor module 70 (see FIG. 18). Therefore, for example, when the vibration of a vehicle or the like is transmitted to the power conversion device 1, it is possible to suppress the vibration of the heavy capacitor module 70 from being transmitted to the semiconductor module 2. As a result, the connection reliability at the power terminal 22 and the control terminal 23 of the semiconductor module 2 can be improved.

As shown in FIGS. 38 and 44, the mold portion 54 is formed with ribs 541 formed between the root portions of the terminals 512, 522, and 532 in the array terminal group 55. That is, the plurality of ribs 541 project from the mold portion 54 in the Y direction. As a result, the insulation between the high potential terminal 512 on the capacitor side and the low potential terminal 522 on the capacitor side and the creepage distance between the low potential terminal 522 on the capacitor side and the relay terminal 532 on the capacitor side are gained to ensure insulation. be able to.

In the array terminal group 55, the terminal contact surface of the plurality of capacitor-side high-potential terminals 512, the terminal contact surface of the plurality of capacitor-side low-potential terminals 522, and the terminal contact surface of the capacitor-side relay terminal 532 are on the same plane. Is located in.

Further, as shown in FIG. 44, the plurality of capacitor-side high-potential terminals 512, the plurality of capacitor-side low-potential terminals 522, and the capacitor-side relay terminals 532 are arranged linearly in the X direction even when viewed from the Y direction. Has been done.

Further, as shown in FIGS. 38 and 44, the bus bus assembly 5 has at least two fixing portions 57 fixed to the housing (not shown) of the power conversion device 1. These two fixing portions 57 are formed at positions sandwiching the array terminal group 55 from the X direction. The fixing portion 57 has an insertion hole 571 for inserting a bolt. The insertion hole 571 penetrates a part of the mold portion 54 in the bus bus assembly 5 in the Z direction. The bus bus assembly 5 is fixed to the case 11 by inserting a bolt into the insertion hole 571 of the fixing portion 57 and fastening it to the housing.

As shown in FIGS. 38 and 46, a part of the mold portion 54 that seals the laminated region in which the high-potential bus bar 51 and the low-potential bus bar 52 are laminated and a part of the connecting portion that connects the fixing portion 57 are , It has a portion 542 that is thinner than the resin thickness in the laminated region. The relay bus bar 53 is arranged at a position corresponding to the thin portion 542.

When the stacking pitch of the high-potential bus bar 51 and the low-potential bus bar 52 is narrowed, it is necessary to allow more resin to flow into the laminated region side in order to secure insulation. On the other hand, since the mold portion 54 of the bus bath assembly 5 exists in a portion other than the laminated region, it is necessary that the resin flows into the portion other than the laminated region at the time of molding the mold portion 54. Here, in order to allow more resin to flow into the laminated region, it is necessary to increase the inflow resistance to other parts. Therefore, a thin portion 542 is provided as a part of the connecting portion connecting the laminated region and the fixing portion 57. Further, the relay bus bar 53 is not stacked with other bus bars. By utilizing the thin portion of the mold portion 54 for arranging the relay bus bar 53, it is possible to suppress the increase in size of the entire bus bar assembly 5.

Further, as shown in FIG. 45, the resin thickness of the fixing portion 57 and its periphery is thicker than that of the connecting portion. This is because these parts need to withstand the fastening load at the time of fastening to the case 11.
Further, the position of the fixed portion 57 is different from that of the laminated region in the Z direction. Further, a part of the connecting portion has a curved shape in a cross section orthogonal to the extending direction thereof. Even if the thickness of the connecting portion is reduced as described above, it is possible to strengthen the bending in the extending direction by giving it a curved shape. As a result, the strength of the connecting portion can be ensured. Specifically, the rigidity is improved because the resin cross-sectional area can be increased by making the arch shape with respect to the straight shape. At the same time, the arch shape can be structurally increased in rigidity. On the other hand, when trying to secure the same strength in a linear shape, it is necessary to increase the plate thickness, and as a result, the overall shape of the bass bassy 5 tends to be large. Therefore, by adopting an arch shape for a part of the connecting portion, it is possible to achieve both miniaturization and ensuring strength of the bus bus assembly 5.

As shown in FIGS. 39 and 40, the high-potential bus bar 51 has a plurality of capacitor-side high-potential terminals 512 on one end side of the high-potential main body 510 in the Y direction, and is located on the other end side of the high-potential main body 510. It has a plurality of semiconductor-side high-potential terminals 511. Here, for convenience, the side in which the plurality of capacitor-side high-potential terminals 512 are arranged with respect to the high-potential main body 510 in the Y direction is referred to as the Y1 side, and the opposite side is referred to as the Y2 side. The high-potential main body portion 510 has a plurality of branching portions 514 that are branched in a comb-teeth shape at the Y2 side end portion thereof. The portion erected in the Z direction from a part of the side edge of the branch portion 514 is the semiconductor side high potential terminal 511.

The semiconductor-side high-potential terminal 511 of the high-potential bus bar 51 protrudes slightly linearly from the branch portion 514, and is bent in the Z direction at the protruding tip. The semiconductor-side high-potential terminal 511 is bent in the Z direction at a tip slightly protruding in the X direction from the end face of the branch portion 524 described later in the low-potential bus bar 52. While it is necessary to insulate between the semiconductor-side high-potential terminal 511 and the semiconductor-side low-potential terminal 521, resin seals only on the flat plate-shaped portions of the high-potential bus bar 51 and the low-potential bus bar 52 that are orthogonal to the Z direction. It is desirable to stop it from the viewpoint of low cost and productivity improvement. Therefore, the semiconductor-side high-potential terminal 511 has a shape that slightly protrudes linearly in the X direction from the branch portion 514 and is bent at the tip.

As shown in FIGS. 39 and 41, the low-potential bus bar 52 has a plurality of capacitor-side low-potential terminals 522 on the Y1 side of the low-potential main body 520 in the Y direction, and a plurality of low-potential bus bars 52 on the Y2 side of the low-potential main body 520. It has a low potential terminal 521 on the semiconductor side of the above. The low-potential main body portion 520 is formed by forming a plurality of branch portions 524 at its Y2 side end portion. The portion erected in the Z direction from a part of the side edge of the branch portion 524 is the semiconductor side low potential terminal 521.

As shown in FIGS. 38, 44, 45, and 46, substantially the entire high-potential main body 510 and low-potential main body 520 are sealed in the mold portion 54 in the bus bath assembly 5. The mold portion 54 can be made of an insulating resin. The semiconductor-side high-potential terminal 511 and the semiconductor-side low-potential terminal 521 are exposed from the mold portion 54. Further, the high potential terminal 512 on the capacitor side and the low potential terminal 522 on the capacitor side are also exposed from the mold portion 54.

Further, in the relay bus bar 53, the reactor side relay terminal 531 and the capacitor side relay terminal 532 are exposed from the mold portion 54. Then, a part of the relay main body portion 530 is sealed in the mold portion 54.

As shown in FIG. 41, the tip portions of the plurality of branch portions 524 of the low-potential bus bar 52 are all connected to each other. Further, the connecting portion 527 is located between the negative electrode terminal 22N of the semiconductor module 2 and the AC terminal 22A (see FIG. 5). A predetermined clearance is formed between the connecting portion 527 and the AC terminal 22A. Further, as shown in FIGS. 38 and 45, the connecting portion 527 is not resin-sealed and is exposed from the mold portion 54.

When forming the semiconductor-side low-potential terminal 521, it is bent from the branch portion 524 and processed. Therefore, in order to secure the strength of the branch portion 524, it is connected at the tip portion thereof. Further, if the mold portion 54 is resin-sealed up to the connecting portion 527, the creepage distance between the mold portion 54 and the AC terminal 22A of the semiconductor module 2 must be secured. Then, the semiconductor module 2 has to be enlarged. Therefore, the connecting portion 527 is intentionally exposed from the mold portion 54 without being sealed with resin.

As shown in FIGS. 38 and 45, the mold portion 54 includes a portion that seals the overlapping portion between the branch portion 514 of the high-potential bus bar 51 and the branch portion 524 of the low-potential bus bar 52 and the branch portion 514 of the low-potential bus bar 52. The resin thickness is different from the portion where the busbar is sealed. That is, the portion where only the branch portion 514 of the low-potential bus bar 52 is sealed has a smaller thickness in the Z direction than the portion where the portion where the high-potential bus bar 51 and the low-potential bus bar 52 overlap is sealed. Therefore, a step portion 543 is formed in the mold portion 54 between the two.

At the location where the high-potential bus bar 51 and the low-potential bus bar 52 are laminated, the resin thickness is increased for insulation. On the other hand, in the region where the bus bar is not laminated, the resin thickness is made thinner than that in the laminated region in order to reduce the cost and improve the productivity. Further, it is preferable that the semiconductor-side high-potential terminal 511 and the semiconductor-side low-potential terminal 521 have the same length as much as possible from the viewpoint of equal length and heat resistance of the current path. Therefore, by making the resin thickness of only the low-potential bus bar 52 thinner than the resin thickness of the laminated region of the high-potential bus bar 51 and the low-potential bus bar 52, the protruding length of the low-potential bus bar 52 terminal can be made high potential. It is easy to make it equal to the protruding length of the bus bar 51 terminal.

The reactor-side relay terminal 531 in the relay bus bar 53 and the branch portion 514 of the high-potential bus bar 51 are arranged at different heights in the Z direction. In particular, the reactor-side relay terminal 531 of the relay bus bar 53 is arranged at the same height as the branch portion 524 of the low-potential bus bar 52 in the Z direction. That is, the branch portion 524 of the bus bar (in this embodiment, the low potential bus bar 52) having the connection portion with the semiconductor module 2 at a position farther from the connection portion with the capacitor module 70, and the reactor side relay terminal of the relay bus bar 53. 531s are arranged at the same position in the Z direction (see FIG. 48).

The low-potential bus bar 52 is arranged closer to the semiconductor module 2 in the Z direction than the high-potential bus bar 51 (see FIG. 18). The reactor 4 is also on the semiconductor module 2 side. Therefore, the coil terminal 41 of the reactor 4 is compared with the case where the above arrangement is not adopted, that is, the relay terminal 531 of the relay bus bar 53 is arranged at the same height as the high potential bus bar 51. Can be shortened.

As shown in FIGS. 39 and 43, the high-potential bus bar 51 and the low-potential bus bar 52 extend in the high-potential main body portion 510 and the low-potential main body portion 520 in a laminated state. Of the semiconductor-side terminals in the two busbars on the high-potential side and the low-potential side, the semiconductor-side terminal (in this embodiment, the semiconductor-side high-potential terminal 511) arranged on the fastening point side with the capacitor is the other busbar. (In this embodiment, the low-potential bus bar 52) is bent to the side opposite to the side on which it is arranged. Further, among the semiconductor-side terminals on the high-potential side and low-potential side bus bars, the semiconductor-side terminal on the side farther from the capacitor fastening point (in this embodiment, the semiconductor-side low-potential terminal 521) is arranged on the capacitor fastening point side. It is formed by bending in the same direction as the semiconductor-side terminal (in this embodiment, the semiconductor-side high-potential terminal 511). Further, the tip of the high potential terminal 511 on the semiconductor side and the tip of the low potential terminal 521 on the semiconductor side are arranged at different heights in the Z direction, and the welding points with the power terminal 22 of the semiconductor module 2 are also at different heights. Become.

If the semiconductor side terminal arranged near the capacitor fastening point is bent to the side where the other bus bar is arranged (in the configuration of the present embodiment, the semiconductor side low potential terminal 521 has a high potential). If it bends toward the bus bar 51 side), it is necessary to secure the resin thickness and the like in order to secure the insulation distance. In addition, the terminal length and width before bending become large, and the entire bus bus assembly 5 tends to be large. Therefore, the orientation and arrangement of each of these terminals are configured as described above. Further, the semiconductor side high potential terminal 511 and the semiconductor side low potential terminal 521 are bent in the same direction and welded to the power terminal 22 of the semiconductor module 2 at the tip. As a result, welding can be performed on the bus bus assembly 5 from the same side in the Z direction, and the welding work becomes easy. Further, by arranging the welding points at different heights, it is possible to suppress the concentration of welding heat and suppress the influence of heat on the resin of the mold portion 54.

As shown in FIGS. 39, 40, 41, and 42, the edge in the X direction of the high potential main body 510 of the high potential bus bar 51 and the low potential main body 520 of the low potential bus bar 52 protrudes in the X direction. The edge protrusions 515 and 525 are formed. In particular, a part of the edge protrusions 515 and 525 protruding from the side surface of the branch portions 514 and 524 is formed of semiconductor side terminals 511 and 521 formed from the end faces on the same side of the branch portions 514 and 524 adjacent in the X direction. It is in the same position as the position in the Y direction.

The high-potential bus bar 51 and the low-potential bus bar 52 are laminated at a narrow pitch, and maintaining an accurate distance between them and sealing the resin is a viewpoint of maintaining sufficient insulation and a viewpoint of miniaturization of the entire bus bar assembly 5. Is important in. Therefore, when molding the mold portion 54 while inserting these bus bars, it is necessary to fix the resin-sealed portions of the high-potential bus bar 51 and the low-potential bus bar 52. By sealing the edge protrusions 515 and 525 with a resin while gripping them with a gripping jig, highly accurate resin sealing becomes possible. Further, the edge protrusions 515 and 525 from the branch portions 514 and 524 can have the same shape as those of the semiconductor side terminals 511 and 521 before bending. As a result, the shape of the branch portions 514 and 524 before the bending process becomes a repeating shape of the same pattern. As a result, it is not necessary to form a special shape for the grip portion, the manufacturing is easy, and the cost can be reduced.

A plurality of pin insertion holes 516 and 526 are formed in the high potential main body 510 of the high potential bus bar 51 and the low potential main body 520 of the low potential bus bar 52, respectively. The pin insertion holes 516 and 526 are for inserting the holding pin HP for holding the high-potential bus bar 51 and the low-potential bus bar 52 as shown in FIGS. 47, 48, 49, and 50 when the mold portion 54 is molded. It is a hole. The plurality of small holes 546 formed in the mold portion 54 shown in FIG. 38 are traces of the holding pin HP.

Of the plurality of pin insertion holes 516 and 526, the pin insertion holes 516 and 526 formed on the side closest to the semiconductor side terminals 511 and 521 in the laminated region of the high potential bus bar 51 and the low potential bus bar 52 are in the Z direction. , The pin insertion hole 526 formed in the bus bar (low potential bus bar 52 in this embodiment) on the side far from the semiconductor module 2. That is, the holding pin HP arranged on the side closer to the semiconductor side terminals 511 and 521 in the Y direction holds the bus bar on the side closer to the semiconductor module 2 (in the present embodiment, the low potential bus bar 52). ..
By holding the bus bar (in this embodiment, the low potential bus bar 52) protruding in the Y direction on the side closest to the semiconductor side terminals 511 and 521 in the laminated region of the high potential bus bar 51 and the low potential bus bar 52. , The deformation of the bus bar can be effectively suppressed.

As shown in FIGS. 39 to 42, at least a part of the pin insertion holes 516 and 526 formed at positions close to the capacitor side terminals 512 and 522 in the Y direction are provided with capacitor side terminals 512 and 522 overlapping in the Y direction. It is formed in the same bus bar as the bus bar. That is, at least one of the pin insertion holes located close to the high potential terminal 512 on the capacitor side in the Y direction and overlapping in the Y direction is a pin insertion formed in the low potential main body portion 520 of the low potential bus bar 52. It is a hole 526. On the contrary, at least one of the pin insertion holes located close to the low potential terminal 522 on the capacitor side in the Y direction and overlapping in the Y direction is a pin formed in the high potential main body 510 of the high potential bus bar 51. The insertion hole is 516.
Therefore, the holding pin inserted through the pin insertion hole is configured to be able to come into contact with a bus bar different from the bus bar having a capacitor-side terminal located close to the Y direction and overlapping in the Y direction.

When molding the mold portion 54, it is preferable to flow the resin while holding the capacitor side terminals 512 and 522. In that case, the high-potential main body 510 and the low-potential main body 520 are located close to the capacitor-side terminals 512 and 522, rather than holding the same bus bar as the capacitor-side terminals 512 and 522. It is easier to hold the entire busbar stably if you hold the one. That is, it is preferable to hold the low potential bus bar 52 in the vicinity of the high potential terminal 512 on the capacitor side. On the other hand, it is preferable to hold the high potential bus bar 51 in the vicinity of the low potential terminal 522 on the capacitor side. Therefore, the pin insertion holes 516 and 526 are arranged as described above.

As shown in FIG. 42, in the laminated region of the bus bars 51 and 52, at least a part of the pin insertion holes adjacent to each other is pin insertion holes formed in different bus bars. That is, as shown in FIG. 42, when viewed from the Z direction, the plurality of pin insertion holes 516 and 526 formed in the two bus bars 51 and 52 are arranged in a grid pattern, but are arranged in a specific pin insertion hole. When focused, the pin insertion holes adjacent to the pin insertion hole in either direction are arranged so as to be pin insertion holes formed in a bus bar different from the pin insertion hole. That is, for example, the state in which the pin insertion hole 516 formed in the high-potential bus bar 51 is surrounded adjacent to the pin insertion hole 516 formed in the high-potential bus bar 51 from both the X direction and the Y direction. I try not to be. Similarly, the pin insertion hole 526 formed in the low-potential bus bar 52 is not surrounded adjacent to the pin insertion hole 526 formed in the low-potential bus bar 52 from either the X direction or the Y direction. It is done like this.
As a result, it becomes easy to stably fix both the high-potential bus bar 51 and the low-potential bus bar 52 at the time of molding the mold portion 54.

The capacitor-side high-potential terminal 512 of the high-potential bus bar 51 protrudes from the Y-direction end edge of the low-potential main body 520. Further, the capacitor-side low-potential terminal 522 of the low-potential bus bar 52 protrudes from the end edge of the high-potential main body 510 in the Y direction. The high-potential terminal 512 on the capacitor side and the low-potential terminal 522 on the capacitor side face each other on the side surfaces facing the X direction.
As a result, insulation is achieved between the high potential terminal 512 on the capacitor side and the low potential bus bar 52 and between the low potential terminal 522 on the capacitor side and the high potential bus bar 51, and the high potential terminal 512 on the capacitor side and the low potential on the capacitor side are low. It is possible to reduce the inductance by the effect of canceling the magnetic flux between the potential terminal 522 and the potential terminal 522.

The semiconductor-side high-potential terminal 511 of the high-potential bus bar 51 and the semiconductor-side low-potential terminal 521 of the low-potential bus bar 52 are respectively arranged and welded to the power terminal 22 of the semiconductor module 2 on both sides (see FIG. 5). ). Further, as shown in FIG. 42, the semiconductor-side high-potential terminal 511 and the semiconductor-side low-potential terminal 521 are staggered, respectively. That is, the semiconductor side terminals 511 and 521 connected to the common power terminal 22 are arranged so as not to overlap each other when viewed from the X direction. This makes it easy to reduce the manufacturing costs of the bus bars 51 and 52. That is, for example, when forming the semiconductor side terminals 511 and 521 in the bus bars 51 and 52 by cutting and bending one metal plate, it is easy to manufacture and the material cost can be easily reduced. Further, assuming that the semiconductor side terminals 511 and 521 are provided at positions facing each other in the X direction without being arranged in a staggered manner, the distance of at least the combined lengths of the semiconductor side terminals 511 and 521 is set to the adjacent branch portions 514. It will be necessary to secure between 524. Then, the bus bars 51 and 52 will be increased in size. On the other hand, by arranging the semiconductor side terminals 511 and 521 in a staggered manner, it is possible to easily reduce the size of the bus bars 51 and 52.
Further, on both sides to the power terminal 22, by the arrangement of the semiconductor side pin 511 and 521, it is possible to disperse the heat generated at the joint.

As shown in FIG. 42, the semiconductor side high potential terminal 511 arranged at the position closest to the semiconductor side low potential terminal 521 in the Y direction and the semiconductor side arranged at the position closest to the semiconductor side high potential terminal 511 in the Y direction. It does not face the low potential terminal 521 in the Y direction. That is, these semiconductor-side terminals 511 and 521 are displaced from each other in the X direction and the Y direction.
As a result, insulation between the semiconductor-side high-potential terminal 511 and the semiconductor-side low-potential terminal 521 is ensured. The semiconductor side terminals 511 and 521 face the power terminal 22 in the X direction to reduce the inductance due to the effect of canceling the magnetic flux. On the other hand, the semiconductor side high potential terminal 511 and the semiconductor side low potential terminal 521 are arranged so as not to face each other in the X direction and the Y direction, thereby ensuring an insulation distance. Through these measures, both low inductance and insulation are achieved.

Three or more semiconductor-side terminals 511 and 521 connected to the common power terminal 22 are arranged. That is, one or more semiconductor side terminals 511 and 521 are connected to one main surface of one power terminal 22, and two or more semiconductor side terminals 511 and 521 are connected to the other main surface ( (See FIG. 5). As a result, the power terminal 22 can be stably sandwiched between the semiconductor side terminals 511 and 521 from both main surfaces thereof, and welding work and the like can be easily performed. The semiconductor side terminals 511 and 521 connected to the common power terminal 22 may be two. However, in this case, the sandwiched power terminal 22 may be displaced in the twisting direction about the protruding direction thereof, which tends to be disadvantageous from the viewpoint of stability. Therefore, by supporting one power terminal 22 with three or more semiconductor-side terminals 511 and 521, stable support can be easily realized.

When viewed from the Z direction, an odd-numbered semiconductor-side high-potential terminal 511 and an even-numbered semiconductor-side low-potential terminal 521 are arranged side by side in the Y-direction, and an even-numbered semiconductor-side high-potential terminal 511 and an odd-numbered semiconductor. There is a row in which the side low potential terminals 521 are arranged side by side in the Y direction. The former row and the latter row are arranged alternately in the X direction.
When viewed from the Z direction, the low potential bus bar 52 is formed with an opening penetrating in the Z direction in the region where the semiconductor side high potential terminal 511 and the semiconductor side low potential terminal 521 are formed.

The high-potential bus bar 51 and the low-potential bus bar 52 are laminated so that the low-potential main body 520 is closer to the semiconductor module 2 than the high-potential main body 510. The main surface of the low-potential main body 520 faces the semiconductor module 2 in the Z direction. A heat sink on the upper arm side of the semiconductor module 2 (that is, a positive electrode heat sink 24P and an upper arm AC heat sink 24AP) is arranged at a position where the low potential main body portion 520 and the semiconductor module 2 face each other in the Z direction (FIG. 18). reference).

The bending direction of the semiconductor side terminals 511 and 512 from the branch portions 514 and 524 is opposite to the side on which the semiconductor module 2 is arranged.
As a result, the curved surface formed at the root portion of the semiconductor side terminals 511 and 521 is formed on the surface on the semiconductor module 2 side. This curved surface serves as a guide mechanism for absorbing the misalignment of the power terminal 22 due to the stacking tolerance in the X direction. Further, when joining the power terminal 22 and the semiconductor side terminals 511 and 521, the welding tool or the like can be accessed from the side opposite to the semiconductor module 2. Therefore, the joining work tends to be easy.

As shown in FIGS. 39 and 46, the relay bus bar 53 and the low-potential bus bar 52 are arranged so as to face each other on the side surfaces having a smaller area than the main surface. The main surface of the low-potential bus bar 52 is arranged to face the high-potential bus bar 51. By having such an arrangement relationship between the high-potential bus bar 51, the low-potential bus bar 52, and the relay bus bar 53, it is possible to increase the number of facing portions through which the current flows in the opposite directions as a whole. Therefore, it can contribute to the low inductance of the bus bus assembly 5 as a whole.

In the mold portion 54, the resin layer outside the laminated portion of the high-potential bus bar 51 and the low-potential bus bar 52 in the Z direction, rather than the intermediate resin layer interposed between the high-potential bus bar 51 and the low-potential bus bar 52. Is thinner.
As a result, the bus bars 51 and 52 are stressed by the resin when the resin is cooled. Due to the thickness relationship described above, the stress from the outside to the inside can be made larger than the stress from the inside to the outside, and it is possible to prevent the stacked high-potential bus bars 51 and the low-potential bus bars 52 from being too far apart. ..

<Semiconductor module>
Next, the structure of the semiconductor module 2 will be described. As shown in FIG. 71, the semiconductor module 2 of this embodiment has four semiconductor elements 20. The semiconductor element 20 includes an upper arm semiconductor element 20 _H arranged on the upper arm and a lower arm semiconductor element 20 _L arranged on the lower arm. In this embodiment, two upper arm semiconductor elements 20 _HA and 20 _HB are connected in parallel to each other, and two lower arm semiconductor elements 20 _LA and 20 _LB are connected in parallel to each other.

The semiconductor element 20 includes an IGBT 201 and a freewheel diode 202 connected in antiparallel to the IGBT 201. The semiconductor element 20 of this embodiment is a so-called RC-IGBT (Reverse Conducting IGBT) in which the IGBT 201 and the freewheel diode 202 are integrated into one chip. In this embodiment, the current capacity of the entire semiconductor module 2 is increased by molding four RC-IGBTs into one package.

As shown in FIGS. 52, 56, 58, and 70, the semiconductor module 2 includes a module main body 21 incorporating the semiconductor element 20, a power terminal 22 protruding from the module main body 21, and a control terminal 23. To be equipped with. The power terminal 22 includes a positive electrode terminal 22 _P and a negative electrode terminal 22 _{N to} which a DC voltage is applied, and an AC terminal 22 _A. As shown in FIG. 71, the positive electrode terminal 22 _P is connected to the collector electrode 28 _C of the upper arm semiconductor element 20 _H , and the negative electrode terminal 22 _N is connected to the emitter electrode 28 _E of the lower arm semiconductor element 20 _L. There is. Further, the AC terminal 22 _A is connected to the emitter electrode 28 _E of the upper arm semiconductor element 20 _H and the collector electrode 28 _C of the lower arm semiconductor element 20 _L.

The control terminal 23 includes a cathode terminal 23 _K , an anode terminal 23 _A , a gate terminal 23 _G , a sense terminal 23 _S, and an emitter terminal 23 _E. The anode terminal 23 _A and the cathode terminal 23 _K are connected to a temperature sensitive diode 203 provided in the semiconductor element 20. The temperature sensitive diode 203 is used to measure the temperature of the semiconductor element 20. The gate terminal 23 _G is connected to the gate electrode 28 _G , and the emitter terminal 23 _E is connected to the emitter electrode 28 _E. The sense terminal 23 _S is connected to the sense electrode 28 _S of the semiconductor element 20. A part of the current flowing through the semiconductor element 20 is taken out from the sense terminal 23 _S and measured.

As shown in FIGS. 51 to 54, the semiconductor module 2 includes a plurality of heat sinks 24. The heat sink 24 includes a positive electrode heat sink 24 _P , a negative electrode heat sink 24 _N, and an AC heat sink 24 _A (24 _AP , 24 _AN ). The positive electrode heat sink 24 _P is electrically connected to the collector electrode 28 _C of the upper arm semiconductor element 20 _H. The positive electrode terminal 22 _P protrudes from the positive electrode heat sink 24 _P. Further, the negative electrode heat sink 24 _N is electrically connected to the emitter electrode 28 _E of the lower arm semiconductor element 20 _L. The negative electrode terminal 22 _N protrudes from the negative electrode heat sink 24 _N.

The AC heat sink 24 _A includes an upper arm AC heat sink 24 _AP and a lower arm AC heat sink 24 _AN . The upper arm AC heat sink 24 _AP is electrically connected to the emitter electrode 28 _E of the upper arm semiconductor element 20 _H , and the lower arm AC heat sink 24 _AN is electrically connected to the collector electrode 28 _C of the lower arm semiconductor element 20 _L. The AC terminal 22 _A protrudes from the lower arm AC heat sink 24 _AN . The upper arm AC heat sink 24 _AP and the lower arm AC heat sink 24 _AN are connected to each other at the heat sink connection portion 25.

Further, as shown in FIGS. 54 and 62 to 69, a terminal 291 (metal block) is arranged between the heat sinks 24 _N and 24 _AP and the semiconductor element 20. As shown in FIG. 54, a solder 292 connecting the terminals 291 and the heat sinks 24 _N and 24 _APs is interposed. Solder 292 is also interposed between the terminal 291 and the semiconductor element 20 and between the semiconductor element 20 and the heat sinks 24 _P and 24 _AN .

Further, as shown in FIG. 53, two lead ends 249 are formed on the positive electrode heat sink 24 _P and the lower arm AC heat sink 24 _AN , respectively. These lead ends 249 protrude from the module main body 21 (see FIG. 52).

Further, as shown in FIG. 54, a plurality of pads 280 that conduct with the gate electrode 28 _G , the sense electrode 28 _S (see FIG. 71), and the like are formed in each semiconductor element 20. These pads 280 and the control terminal 23 are connected by a wire (not shown).

As shown in FIG. 55, the four semiconductor elements 20 are arranged in the Y direction. The Y-direction spacing L _HH of the two upper arm semiconductor elements 20 _HA and 20 _HB and the Y-direction spacing L _{LL of the} two lower arm semiconductor elements 20 _LA and 20 _LB are equal to each other. These spacing L _HH, L _LL is smaller than the Y-direction distance L _HL between the upper arm semiconductor element 20 _HA and the lower arm semiconductor devices 20 _LB. As this, in this embodiment, by narrowing the two upper arms semiconductor device 20 _HA, 20 _HB distance L _HH and two lower arm semiconductor devices 20 _LA, 20 intervals L _LL of _LB of which are connected in parallel with each other There is. As a result, the difference in distance from the individual upper arm semiconductor elements 20 _HA and 20 _HB to the heat sink connection portion 25 is reduced, and the difference in distance from the individual lower arm semiconductor elements 20 _LA and 20 _LB to the heat sink connection portion 25 is reduced. Is made smaller. In this way, the difference in inductance parasitic between the individual upper arm semiconductor elements 20 _HA , 20 _HB and the heat sink connection portion 25 can be reduced, and the individual lower arm semiconductor elements 20 _LA , 20 _LB and the heat sink connection portion can be reduced. It is possible to reduce the difference in the inductance that is parasitic on the 25. Therefore, the imbalance of the current caused by the inductance and the oscillation of the voltage applied to the gate electrode 28 _G (see FIG. 71) can be suppressed.

Further, as shown in FIG. 55, when viewed from the thickness direction (X direction) of the semiconductor module 2, the positions of the side surface 209 of each semiconductor element 20 on the side where the pad 280 is provided are substantially equal in the Z direction. ing. In this way, the distances from the pad 280 to the control terminal 23 can be made equal for all the semiconductor elements 20, and the inductance parasitic between the pad 280 and the control terminal 23 can be made equal. Further, with the above configuration, it becomes easy to unify the wiring member (that is, the wire) that connects the pad 280 and the control terminal 23, and the assembling property (that is, the ease of connecting the pad 280 and the control terminal 23) is improved. Can be done.

Further, as described above, the two upper arm semiconductor elements 20 _HA and 20 _HB and the two lower arm semiconductor elements 20 _LA and 20 _LB are arranged in the Y direction. When viewed from the X direction, the two upper arm semiconductor elements 20 _HA and 20 _HB and the two lower arm semiconductor elements 20 _LA and 20 _LB have their outer edge shapes arranged in the center and extend in the Z direction. It is arranged so as to be line-symmetrical with respect to M _HL .
When the four semiconductor elements 20 are arranged in the Y direction, the length of the semiconductor module 2 in the Y direction becomes long and it becomes easy to increase the size. However, with the above configuration, the stress balance of the entire semiconductor module 2 can be achieved. It will be possible.

Further, the four heat sinks 24 _P , 24 _N , 24 _AP , and 24 _AN have an exposed surface _SE (see FIG. 70) exposed from the module main body 21. Two upper arm semiconductor element 20 _HA, 20 _HB, the exposed surface S _E of the cathode heat sink 24 _P, with respect to the imaginary straight line M _HH arranged in the center in the Y direction, are arranged such that the position is line symmetry ing. Similarly, two of the lower arm semiconductor devices 20 _LA, 20 _LB is the exposed surface S _E of the negative electrode sink 24 _N, with respect to the imaginary straight line M _LL arranged in the center in the Y direction, the position is line symmetry It is arranged.
In this way, the stress balance in the heat sink 24 can be ensured, the heat dissipation performance between the two upper arm semiconductor elements 20 _HA and 20 _HB , and the heat dissipation between the two lower arm semiconductor elements 20 _LA and 20 _LB. Performance can be made approximately equal. Therefore, the individual semiconductor elements 20 can be cooled uniformly. Assuming that the two upper arm semiconductor elements 20 _H and the two lower arm semiconductor elements 20 _L are not arranged at positions that are line-symmetrical, the heat drawing of one of the semiconductor elements 20 is particularly high. A good situation is likely to occur, and it becomes difficult to uniformly cool the two semiconductor elements 20, but by arranging them at positions that are line-symmetrical, the two semiconductor elements 20 can be cooled evenly. In particular, in this embodiment, since the IGBT 201 having a large heat generation amount is provided in the semiconductor element 20, the effect of making it possible to uniformly cool the individual semiconductor elements 20 is great.

Further, as shown in FIG. 55, when viewed from the X direction, the distance L _HH between the two upper arm semiconductor elements 20 _H and the distance L _LL between the two lower arm semiconductor elements 20 _L in the Y direction are , The distance D from the semiconductor element 20 to the end 211 of the module body 21 in the Y direction is longer.
In this way, the length of the entire module main body 21 in the Y direction can be shortened. Further, since the distances L _HH and L _LL are long, heat dissipation between the two semiconductor elements 20 (between 20 _HA and 20 _{HB and} between 20 _LA and 20 _LB ) can be ensured. Further, by increasing the distances L _HH and L _LL , the contact area between the resin constituting the module main body 21 existing between the two semiconductor elements 20 and the heat sink 24 can be increased, and these resins can be used. The adhesion with the heat sink 24 can be increased. Therefore, when the semiconductor element 20 is molded, even if the resin existing between the two semiconductor elements 20 shrinks, the defect that the resin peels off from the heat sink 24 can be suppressed.

Further, as shown in FIGS. 51 and 55, a notch 248 is formed in the upper arm AC heat sink 24 _AP and the negative electrode heat sink 24 _N. As shown in FIG. 55, the upper arm semiconductor element 20 _H is arranged between notches 248 formed at both ends of the upper arm AC heat sink 24 _{AP in} the Y direction. Further, the lower arm semiconductor element 20 _L is arranged between the notches 248 formed at both ends of the negative electrode heat sink 24 _N in the Y direction.
In this way, the semiconductor element 20 can be arranged at a position separated from the side surfaces 245 and 246 of the heat sinks 24 _AP and 24 _{N in} the Y direction. Therefore, the contact area between the resin existing between the side surfaces 245 and 246 and the semiconductor element 20 and the heat sink 24 can be increased, and the adhesion between them can be enhanced. Therefore, even if the resin expands or contracts as the temperature of the semiconductor module 2 changes, the resin is less likely to peel off from the heat sink 24.

Further, as shown in FIG. 55, the individual semiconductor elements 20, than the length L _Z in the Z-direction, towards the length L _Y in the Y-direction is short.
Therefore, the length of the entire semiconductor module 2 in the Y direction can be shortened while arranging a plurality of semiconductor elements 20 in the Y direction so that mounting can be easily performed.

Further, in this embodiment, as shown in FIG. 59, the positive electrode heat sink 24 _P is arranged on one side in the thickness direction (X direction) of the semiconductor module 2, and the negative electrode heat sink 24 _N is arranged on the other side in the X direction. is there.
Therefore, the upper arm semiconductor element 20 _H connected to the positive electrode heat sink 24 _P and the lower arm semiconductor element 20 _L connected to the negative electrode heat sink 24 _N can all be arranged in the same direction. That is, for all the semiconductor elements 20, the surface on which the emitter electrode 28 _E is formed can be directed to the same side. Therefore, the semiconductor module 2 can be easily manufactured.

Further, as shown in FIG. 55, the negative electrode terminal 22 _N projects in the Z direction from the end portion of the negative electrode heat sink 24 _N on the positive electrode heat sink 24 _P side in the Y direction. Further, the negative electrode heat sink 24 _N has a negative side inclination having a shape closer to the lower arm semiconductor element 20 _L in the Z direction from the negative electrode terminal 22 _N toward the side opposite to the side where the positive electrode heat sink 24 _P is arranged in the Y direction. Part 247 _N is formed.
In this way, the negative electrode terminal 22 _N can be brought closer to the positive electrode heat sink 24 _P (that is, the positive electrode terminal 22 _P ), so that the loop area of the current passing through the negative electrode terminal 22 _N and the positive electrode terminal 22 _P can be reduced. .. Further, when the negative side inclined portion 247 _N is formed, it becomes easy to equalize the currents flowing from the two lower arm semiconductor elements 20 to the negative electrode terminals 22 _N , respectively.

Further, in the present embodiment, the positive electrode terminal 22 _P protrudes from the end of the positive electrode heat sink 24 _P on the side where the negative electrode heat sink 24 _N is arranged in the Y direction. Further, the negative electrode terminal 22 _N protrudes from the end of the negative electrode heat sink 24 _N in the Y direction on the side where the positive electrode heat sink 24 _P is arranged.
Therefore, the positive electrode terminal 22 _P and the negative electrode terminal 22 _N can be brought close to each other. Since currents in opposite directions flow through these terminals 22 _P and 22 _N , the inductance parasitic on the terminals 22 _P and 22 _N can be reduced when they are brought close to each other.

Further, the negative electrode heat sink 24 _N is formed with a notch 248 at a corner other than the corner where the negative electrode terminal 22 _N is formed. Further, the upper arm AC heat sink 24 _AP, which is arranged adjacent to the negative electrode heat sink 24 _N in the Y direction, has notches 248 formed at all corners.
In this way, since the notch 248 is not formed in the corner of the negative electrode heat sink 24 _N where the negative electrode terminal 22 _N is formed, the negative electrode terminal 22 _N can be brought closer to the positive electrode terminal 22 _P. it can. Therefore, the inductance parasitic on these terminals 22 _N and 22 _P can be reduced.

Further, as shown in FIG. 55, the positive electrode heat sink 24 _P has an upper arm semiconductor element 20 _H in the Z direction from the positive electrode terminal 22 _P toward the side opposite to the side where the negative electrode heat sink 24 _N is arranged in the Y direction. A positive side inclined portion 247 _P having a shape approaching is formed.
In this way, it becomes easy to equalize the currents flowing from the positive electrode terminal 22 _P to the two upper arm semiconductor elements 20 _H , respectively.

Further, as described above, the upper arm AC heat sink 24 _AP and the lower arm AC heat sink 24 _AN are connected to each other at the heat sink connecting portion 25. The heat sink connection portion 25 extends in the Y direction from the side surface of the upper arm AC heat sink 24 _AP on the lower arm AC heat sink 24 _AN side other than the portion forming the notch 248. That is, the heat sink connection portion 25 is formed so as to avoid the notch portion 248.
If the heat sink connection portion 25 is formed so as to overlap the notch portion 248 in the Y direction, the shape of the heat sink connection portion 25 becomes complicated, the current path becomes complicated, and the parasitic inductance becomes unbalanced. It will be easier. However, if the heat sink connecting portion 25 is formed so as not to overlap the notch portion 248 in the Y direction, the shape of the heat sink connecting portion 25 can be simplified and the current path can be simplified. Therefore, it is possible to prevent the inductance from becoming unbalanced. Further, as in this embodiment, of the side surfaces of the upper arm AC heat sink 24 _AP on the lower arm AC heat sink 24 _AN side, all the side surfaces other than the notch 248 are heat sink connecting portions 25, so that the heat sink is connected in the Z direction. The length of the portion 25 can be increased. Therefore, it becomes possible to pass a larger amount of current.

Further, as shown in FIG. 55, in the semiconductor module 2 of this embodiment, the negative inclined portion 247 _N overlaps a part of the AC terminal 22 _A when viewed from the X direction.

Further, as shown in FIGS. 54 and 55, in the present embodiment, when viewed from the Y direction, the notch 248 formed in the negative electrode heat sink 24 _N and the upper arm AC heat sink 24 _AP and the terminal 291 do not overlap with each other. In this way, it is possible to prevent the notch 248 from hindering the heat dissipation of the semiconductor element 20.

Further, in the present embodiment, the widths of the positive electrode heat sink 24 _P , the negative electrode heat sink 24 _N , the upper arm AC heat sink 24 _AP , and the lower arm AC heat sink 24 _AN are equal to each other in the Y direction.

Further, as shown in FIG. 55, in this embodiment, the length of the negative inclined portion 247 _N is shorter than the length of the positive inclined portion 247 _P. The negative inclined portion 247 _N extends from the root of the negative electrode terminal 22 _N to the notch 248 of the negative electrode heat sink 24 _N. Further, the positive side inclined portion 247 _P extends from the root of the positive electrode terminal 22 _P to the corner portion 2471 of the positive electrode heat sink 24 _P. With this configuration, the lengths of the negative inclined portion 247 _N and the positive inclined portion 247 _P are increased. Therefore, a current easily flows between the second upper arm semiconductor element 20 _HB and the positive electrode terminal 22 _P, and between the first lower arm semiconductor element 20 _LA and the negative electrode terminal 22 _N.

Further, as shown in FIG. 55, the lower arm is longer than the length d ₁ in the Z direction from the side surface 208 on the power terminal 22 side of the lower arm semiconductor element 20 _{L to} the side surface on the power terminal 22 side of the lower arm AC heat sink 24 _AN. The length d ₂ in the Z direction from the side surface 209 of the semiconductor element 20 _{L on} the control terminal 23 side to the side surface of the lower arm AC heat sink 24 _{AN on} the control terminal 23 side is shorter. Similarly, the length d _{3 of} the upper arm semiconductor element 20 _H from the side surface 206 on the power terminal 22 side of the upper arm semiconductor element 20 _{H to} the side surface of the upper arm AC heat sink 24 _{AP on} the power terminal 22 side is longer than that of the upper arm semiconductor element 20 _H. The length d ₄ in the Z direction from the side surface 209 on the control terminal 23 side to the side surface on the control terminal 23 side of the upper arm AC heat sink 24 _AP is shorter.
In this way, the semiconductor element 20 can be brought closer to the control terminal 23. The refrigerant that cools the semiconductor module 2 flows in the cooling pipe 3 in the Z direction from the control terminal 23 side to the semiconductor element 20 side. Therefore, when the semiconductor element 20 is brought close to the control terminal 23, the center of the semiconductor element 20 (that is, a portion where heat is likely to be generated) can be brought close to the refrigerant having a low temperature, and the semiconductor element 20 can be easily cooled uniformly.

Further, as shown in FIG. 55, the longitudinal directions of the positive electrode heat sink 24 _P , the negative electrode heat sink 24 _N, and the two AC heat sinks 24 _AP , 24 _AN coincide with the arrangement direction (Y direction) of the semiconductor element 20. There is.
In this way, the longitudinal directions of the individual heat sinks 24 can be aligned, and the semiconductor module 2 can be mounted more easily.

Further, in the negative electrode heat sink 24 _N and the upper arm AC heat sink 24 _AP , substantially the entire surface of the portion excluding the inclined portion 247 is exposed from the resin constituting the module main body portion 21. The inclined portion 247 is embedded in the resin.

Further, as shown in FIG. 66, the negative electrode terminal 22 _N protrudes from the negative electrode heat sink 24 _{N in the} Z direction and is bent and extended so as to approach the positive electrode terminal 22 _P (see FIGS. 63 and 65) in the X direction. Similarly, as shown in FIG. 63, the positive electrode terminal 22 _P projects from the positive electrode heat sink 24 _{P in the} Z direction, and is bent and extended so as to approach the negative electrode terminal 22 _N in the X direction. When viewed from the Y direction, the positive electrode terminal 22 _P and the negative electrode terminal 22 _N are configured to overlap each other.
In this way, it is possible to approximate the positive terminal 22 _P and the negative electrode terminal 22 _N, can reduce the inductance parasitic on these terminals 22 _P, 22 _N.

Further, as shown in FIGS. 59 to 69, the upper arm semiconductor element 20 _H and the lower arm semiconductor element 20 _L are mounted on separate heat sinks 24. The plurality of upper arm semiconductor elements 20 _H are mounted on one heat sink 24 (that is, positive heat sink 24 _P ), and the plurality of lower arm semiconductor elements 20 _L are mounted on another heat sink 24 (that is, lower arm AC heat sink 24 _AN ). It is installed.

Further, as shown in FIG. 55, the positive terminal 22 _P is the positive heat sink 24 _P, than the side surface 246 _P of the negative electrode sink 24 _N side, are formed to protrude so as to approach the negative terminal 22 _N side in the Y direction .. Similarly, negative terminal 22 _N is the negative heat sink 24 _N, the side surface 246 _N of the positive heat sink 24 _P-side, are formed to protrude so as to approach the positive terminal 22 _P-side in the Y direction.
Therefore, it is possible to a positive terminal 22 _P and the negative electrode terminal 22 _N close together, it is possible to reduce the inductance parasitic on these terminals 22 _P, 22 _N. Further, the Y-direction spacing d ₁₃ at the root portion between the positive electrode terminal 22 _P and the negative electrode terminal 22 _N can be widened. Therefore, a sufficient creepage insulation distance between the positive electrode terminal 22 _P and the negative electrode terminal 22 _N can be secured.

Further, as shown in FIG. 55, the distance d ₅ between the positive terminal 22 _P and the negative electrode terminal 22 _N, less than the distance d ₆ between the AC terminal 22 _A and the negative terminal 22 _N.
Therefore, it is possible to approximate the positive terminal 22 _P and the negative electrode terminal 22 _N, can be further reduced inductance parasitic on these terminals 22 _P, 22 _N. Further, since the distance d ₆ between the AC terminal 22 _A and the negative electrode terminal 22 _N can be lengthened, the insulation property of the AC terminal 22 _A can be further improved.

Further, as shown in FIG. 55, the AC terminal 22 _A is arranged at a position closer to the end portion 211 of the module main body portion 21 in the Y direction than the positive electrode terminal 22 _P and the negative electrode terminal 22 _N. The positive electrode terminal 22 _P and the negative electrode terminal 22 _N are provided at positions closer to the center of the module main body 21 (the position where the virtual straight line M _HL is arranged) in the Y direction than the AC terminal 22 _A.
Therefore, the positive electrode terminal 22 _P and the negative electrode terminal 22 _N can be brought close to each other, the inductance can be reduced, and the AC terminal 22 _A can be separated from the negative electrode terminal 22 _N , further improving the insulation property of the AC terminal 22 _A. be able to.

Further, as shown in FIG. 55, the positive electrode terminals 22 _P are formed at positions where the distances to the individual upper arm semiconductor elements 20 _HA and 20 _HB are not equal to each other. Similarly, the negative electrode terminals 22 _N are formed at positions where the distances to the individual lower arm semiconductor elements 20 _LA and 20 _LB are not equal to each other. Also, the positive terminal 22 _P, the distance of the positive to the electrode terminal 22 _P side of the upper arm semiconductor element 20 close to _H (first upper arm semiconductor element 20 _HA), from the negative terminal 22 _N, the negative terminal 22 _N The distances to the lower arm semiconductor element 20 _L (second lower arm semiconductor element 20 _LB ) on the near side are equal to each other. Furthermore, the positive terminal 22 _P from the far upper arm semiconductor elements 20 _H (second upper arm semiconductor element 20 _HB), and the distance to the positive terminal 22 _P, farther lower arm semiconductor devices from the negative terminal 22 _N 20 The distances from _L (first lower arm semiconductor element 20 _LA ) to the negative electrode terminal 22 _N are equal to each other.
In this way, the layout of the upper arm semiconductor element 20 _H and the lower arm semiconductor element 20 _L can be easily adjusted in the inductance balance.

Further, as shown in FIG. 55, the AC terminals 22 _A are arranged at positions where the distances to the individual lower arm semiconductor elements 20 _LA and 20 _LB are not equal to each other.

Further, the distance from the AC terminal 22 _A to the heat sink connection portion 25 is longer than the distance from the negative electrode terminal 22 _N to the heat sink connection portion 25. Similarly, the distance from the AC terminal 22 _A to the heat sink connection 25 is longer than the distance from the positive electrode terminal 22 _P to the heat sink connection 25. The distance from the heat sink connection portion 25 to the negative electrode terminal 22 _N and the distance from the heat sink connection portion 25 to the positive electrode terminal 22 _P are substantially equal to each other.

Further, as shown in FIG. 55, of the pair of upper arm semiconductor elements 20 _HA and 20 _HB , the upper arm semiconductor element 20 _H (first upper arm semiconductor element) arranged at a position close to the center of the semiconductor module 2 in the Y direction. 20 _HA ) is configured such that at least a part thereof overlaps with the positive electrode terminal 22 _P in the Z direction. Similarly, among the plurality of lower arm semiconductor elements 20 _LA and 20 _LB , the lower arm semiconductor element 20 _L (second lower arm semiconductor element 20 _LB ) arranged at a position near the center of the semiconductor module 2 in the Y direction is At least a part of it is configured to overlap the negative electrode terminal 22 _N in the Z direction.

Further, as shown in FIG. 55, the length of each power terminal 22 in the Y direction is shorter than 1/2 of the length of the heat sink 24 to which the power terminal 22 is connected in the Y direction. For example, the length of the positive electrode terminal 22 _{P in} the Y direction is shorter than 1/2 of the length of the positive electrode heat sink 24 _{P in} the Y direction. The same applies to the negative electrode terminal 22 _N and the AC terminal 22 _A.

Further, as shown in FIG. 55, in the Z direction, the distance from the heat sink connection portion 25 to the side surface 212 of the module main body 21 on the power terminal 22 side and the side surface of the module main body 21 from the heat sink connection 25 on the control terminal 23 side. The distances to 212 are equal to each other.

As shown in FIG. 61, the heat sink connecting portion 25 includes an upper arm portion 251 and a lower arm portion 252. The upper arm portion 251 projects from the upper arm AC heat sink 24 _AP toward the lower arm AC heat sink 24 _AN side in the Y direction. Of the upper arm portion 251, and the surface S ₂₅₁ of the lower arm portion 252 side, of the upper arm alternating heat sink 24 _AP, the surface S _24AP of the positive heat sink 24 _P side is flush.
Further, the lower arm portion 252 is connected to the lower arm AC heat sink 24 _AN . The lower arm portion 252 includes a surface portion 253, a bent portion 254, and an opposing portion 255. A part of the surface 253 projects from the lower arm AC heat sink 24 _AN toward the upper arm AC heat sink 24 _AP side in the Y direction. The surface S _{24AN of the} lower arm AC heat sink 24 _{AN and} the surface S 253 of a part of the surface ₂₅₃ are formed flush with each other. The bent portion 254 is connected to a part of the surface 253 and is bent so as to approach the negative electrode heat sink 24 _N in the X direction. The facing portion 255 is connected to a part of the surface 253 and extends so as to face the upper arm portion 251 in the X direction. The facing portion 255 is formed so as to have a predetermined length in the Y direction and a predetermined thickness in the X direction.

Further, the upper arm portion 251 has an extension portion 256 and a connection portion 257. The extension portion 256 _extends from the end surface S _24PY on the lower arm AC heat sink 24 _AN side of the upper arm AC heat sink 24 _AP to the connection portion 257 in the Y direction. The connecting portion 257 is connected to the facing portion 255 of the lower arm portion 252. The extension portion 256 is configured so that the facing portion 255 and the positive electrode heat sink 24 _P are separated from each other by a predetermined distance in the Y direction. As a result, a sufficient insulation distance between the facing portion 255 and the positive electrode heat sink 24 _P is secured.

Further, as shown in Figure 61, the lower arm alternating heat sink 24 _AN, from the end face S _24NY of the upper arm alternating heat sink 24 _AP side, Y-direction length to the end face S _255N of the lower arm alternating heat sink 24 _AN side of the facing portion 255 of and d _7, the upper arm alternating heat sink 24 _AP, from the end face S _24PY of the lower arm alternating heat sink 24 _aN side, a Y-direction length d ₈ to the end face S _255P arms alternating heat sink 24 _AP side on the counter unit 255 , Equal to each other. As a result, the distance from the facing portion 255 to the negative electrode heat sink 24 _N (that is, the length d ₇ ) in the Y direction is equal to the distance from the facing portion 255 to the positive electrode heat sink 24 _P (that is, the length d ₈ ). doing. As a result, the symmetry is enhanced, and the insulation performance between the facing portion 255 and the negative electrode heat sink 24 _N is made equal to the insulation performance between the facing portion 255 and the positive electrode heat sink 24 _P.

Further, as shown in FIG. 61, when viewed from the Z direction, the connecting portion 257 and the facing portion 255 are the surface S _24AP of the upper arm AC heat sink 24 _AP on the positive electrode heat sink 24 _P side and the lower arm AC heat sink 24. _They are connected to each other at a position between the _AN and the surface S _24AN on the negative electrode heat sink 24 _N side in the X direction.

Further, as shown in FIGS. 55 and 61, when viewed from the Z direction, the connecting portion 257 of the upper arm portion 251 and the facing portion 255 of the lower arm portion 252 are the positive electrode terminal 22 _P and the negative electrode in the Y direction. It is arranged between the terminal 22 _N and the terminal 22 _N. As a result, the current loop is reduced.

Further, as shown in FIG. 59, of the pair of upper arm semiconductor elements 20 _H , from the upper arm semiconductor element 20 _H (second upper arm semiconductor element 20 _HB ) arranged outside in the Y direction to the heat sink connecting portion 25. _Let A be the length in the Y direction, and let B be the length in the Y direction from the upper arm semiconductor element 20 _H (first upper arm semiconductor element 20 _HA ) arranged inside to the heat sink connection portion 25. Further, of the pair of lower arm semiconductor elements 20 _L , the length in the Y direction from the lower arm semiconductor element 20 _L (first lower arm semiconductor element 20 _LA ) arranged outside in the Y direction to the heat sink connection portion 25 is determined. Let C be, and let D be the length in the Y direction from the lower arm semiconductor element 20 _L (second lower arm semiconductor element 20 _LB ) arranged inside to the heat sink connection portion 25. In this case, the following equation holds.
A ≒ C
B ≒ D
In this way, the distances from the heat sink connection portion 25 to the individual semiconductor elements 20 _HA and 20 _LB arranged inside in the Y direction can be made substantially equal, and the inductance parasitic on the current path between them can be made substantially equal. Can be aligned. Similarly, since the distances from the heat sink connection portion 25 to the individual semiconductor elements 20 _HB and 20 _LA arranged on the outside in the Y direction can be made substantially equal, the inductances parasitic on the current path between them are made uniform. be able to.

Further, as shown in FIG. 55, when viewed from the X direction, the heat sink connection portion 25 is configured to intervene in the region between the positive electrode terminal 22 _P and the negative electrode terminal 22 _N in the Y direction. As a result, the length of the current path from the positive electrode terminal 22 _P to the negative electrode terminal 22 _N is shortened, and the inductance parasitic on this current path is reduced.

Further, when viewed from the Y direction, the length of the heat sink connection portion 25 in the Z direction is substantially equal to the length of the semiconductor element 20 in the Z direction. In this embodiment, a sufficient length of the heat sink connection portion 25 in the Z direction is secured so that a large amount of current can flow through the heat sink connection portion 25.
The length of the heat sink connection portion 25 in the Z direction may be longer than the length of the semiconductor element 20 in the Z direction.

Further, as shown in FIG. 55, when viewed from the X direction, the center of the heat sink connection portion 25 in the Z direction is larger than the center of the semiconductor element 20 in the Z direction of the power terminal 22 (positive electrode terminal 22 _P , negative electrode terminal 22 _N). ) Is located on the side.
By doing so, the loop of the current flowing through the positive electrode terminal 22 _P and the negative electrode terminal 22 _N can be reduced, and the inductance can be reduced.

Further, when viewed from the Y direction, the cell region A _CELL formed inside the semiconductor element 20 is located between both ends of the heat sink connection portion 25 in the Z direction. From this, the cell region A _CELL is arranged at a position close to the heat sink connection portion 25 so that the current flowing through the cell region A _CELL becomes uniform.

Further, as shown in FIG. 55, the length d ₉ in the Y direction of the heat sink connection portion 25 is longer than the distance d ₅ between the positive electrode terminal 22 _P and the negative electrode terminal 22 _N.
In this way, the distance between the two heat sinks 24 adjacent to each other in the Y direction (that is, the distance between the upper arm AC heat sink 24 _AP and the negative heat sink 24 _N in the Y direction, and the distance between the positive heat sink 24 _P and the lower arm AC heat sink 24 _AN ) The Y-direction interval) can be widened. Since it is necessary to arrange a ceramic plate on the exposed surface _SE (see FIG. 70) of the heat sink 24 in order to secure insulation with the cooling pipe, the resin or ceramic plate constituting the module main body 21 is used. Creeping current may flow between the heat sinks 24, and it is necessary to sufficiently widen the Y-direction spacing of these heat sinks 24. With the above configuration, the length d ₉ of the heat sink connection portion 25 in the Y direction can be lengthened, so that the distance between the two heat sinks 24 adjacent to each other in the Y direction can be widened, and a sufficient insulation distance between them can be secured. it can. Further, since the positive electrode terminal 22 _P and the negative electrode terminal 22 _N are spatially insulated and creepage current does not flow, these terminals 22 _P and 22 _N can be brought close to each other. Inductance can be reduced by bringing these terminals 22 _P and 22 _{N, in} which currents flowing in opposite directions, close to each other.

Further, as shown in FIG. 61, when viewed from the Y direction, the X-direction length d ₁₀ of the heat sink connection portion 25 is longer than 1/2 of the X-direction length of the heat sink 24.
By doing so, the heat sink connection portion 25 can be made thicker, a larger current can be passed, and the current can be made uniform.

Further, as shown in FIG. 55, two lead ends 249 are formed on the positive electrode heat sink 24 _P, and two lead ends 249 are formed on the lower arm AC heat sink 24 _AN . As described above, the semiconductor module 2 of this embodiment includes a total of four lead ends 249.
The lead end 249 is held by an assembling jig when the semiconductor modules 2 are laminated. Therefore, with the above configuration, the two lead ends 249 _C existing near the center of the semiconductor module 2 in the Y direction can be held, and the semiconductor module 2 can be stably held.

Further, the lead end 249 extends in the Z direction from both ends of the individual heat sinks 24 _P and 24 _AN in the Y direction.
Therefore, the control terminals 23 can be arranged between the two lead ends 249, and these control terminals 23 can be protected by the lead ends 249.

Further, as shown in FIG. 55, the lead end 249 is formed so as to avoid the heat sink connecting portion 25.

Further, when viewed from the Z direction, the lead end 249 is formed at a position where it does not overlap with the semiconductor element 20. As a result, the distance between the control terminal 23 connected to the semiconductor element 20 and the lead end 249 is widened, and the insulation between the lead end 249 and the control terminal 23 is ensured.

Further, in this embodiment, as shown in FIG. 55, the control terminals 23 are separately provided on the individual semiconductor elements 20. Further, the control terminal 23 _H for the upper arm is provided on the side where the upper arm semiconductor element 20 _H is arranged in the Y direction. The control terminal 23 _L for the lower arm is provided on the side where the lower arm semiconductor element 20 _L is arranged in the Y direction. As a result, the individual control terminals 23 are arranged at positions close to the semiconductor element 20 to be connected, and the current path from the semiconductor element 20 to the control terminal 23 is shortened.

Further, as shown in FIG. 55, the plurality of semiconductor elements 20 connected in parallel to each other have the same distance between the individual control terminals 23 and the pads 280.

Further, in the present embodiment, the two controls connected to the two semiconductor elements 20 connected in parallel to each other rather than the Y-direction spacing d ₁₁ of the plurality of control terminals 23 connected to the one semiconductor element 20. The Y-direction spacing d ₁₂ of the terminals 23 is longer.
Therefore, the Y-direction spacing d ₁₁ of the plurality of control terminals 23 connected to one semiconductor element 20 can be narrowed, and the wire bonding angle from the pad 280 to the control terminal 23 can be reduced. If the wire bonding angle is large, the connection reliability of the wire bonding may decrease, but by reducing the wire bonding angle, the connection reliability can be improved. Further, with the above configuration, the Y-direction spacing d ₁₂ of the plurality of control terminals 23 connected to the separate semiconductor elements 20 can be lengthened. Therefore, the distance (L _HH , L _LL ) in the Y direction of the two semiconductor elements 20 connected in parallel to each other can be lengthened, and it is possible to suppress thermal interference between these semiconductor elements 20.

Further, as shown in FIG. 55, among the plurality of control terminals 23 connected to the upper arm semiconductor element 20 _H (second upper arm semiconductor element 20 _HB ) arranged on the outside in the Y direction, the control terminals 23 are arranged on the outermost side in the Y direction. Of the plurality of control terminals 23 connected to the upper arm semiconductor element 20 _H (first upper arm semiconductor element 20 _HA ) arranged inside, the distance between the control terminal 23 _O and the lead end 249 is a. When the distance between the control terminal 23 _I arranged on the innermost side in the Y direction and the lead end 249 is b, a≈b is established. The lower arm semiconductor element 20 _L has the same configuration.
In this way, the distances a and b between the control terminals 23 _O and 23 _I and the lead end 249 can be made uniform, and these insulation distances can be balanced. Further, it is easy to shorten the length of the entire module main body 21 in the Y direction.

Further, as shown in FIG. 55, in the present embodiment, the lengths of the plurality of control terminals 23 connected to the upper arm semiconductor element 20 _H in the Z direction are made equal for all the upper arm semiconductor elements 20 _H. The same applies to the lower arm semiconductor element 20 _L.
By doing so, the inductance parasitic on the control terminal 23 can be made uniform, and it is possible to suppress the occurrence of a control delay in any of the plurality of semiconductor elements 20 connected in parallel to each other. ..

Further, as shown in FIG. 55, in this embodiment, a Y-direction distance d ₁₁ of the plurality of control terminals 23 connected to one of the upper arm semiconductor devices 20 _H, and equal for all of the upper arm semiconductor chip 20 _H is there. The same applies to the lower arm semiconductor element 20 _L.

In this way, the magnetic coupling of the plurality of control terminals 23 connected to one upper arm semiconductor element 20 _H can be balanced among the plurality of semiconductor elements 20 connected in parallel with each other.

Further, as shown in FIG. 55, the Y-direction spacing L _HH of the two upper arm semiconductor elements 20 _H is connected to the control terminal 23 connected to one upper arm semiconductor element 20 _HA and the other upper arm semiconductor element 20 _HB . It is longer than the shortest distance d ₁₂ with the control terminal 23. The lower arm semiconductor element 20 _L has the same configuration.
In this way, the intervals L _HH and L _LL of the plurality of semiconductor elements 20 connected in parallel with each other can be widened, and the influence of heat diffusion of the plurality of adjacent semiconductor elements 20 can be reduced. Further, since the shortest distance d ₁₂ can be narrowed, the length of the module main body 21 in the Y direction can be shortened. Therefore, the semiconductor module 2 can be miniaturized.

Further, as shown in FIG. 55, the plurality of control terminals 23 connected to the upper arm semiconductor element 20 _H are of the upper arm semiconductor element 20 _H (second upper arm semiconductor element 20 _HB ) arranged outside in the Y direction. It is arranged inside in the Y direction with respect to the outer end face S _{20HB in} the Y direction. Similarly, a plurality of control terminals 23 connected to the lower arm semiconductor devices 20 _L, the lower arm disposed in the outer side in the Y-direction semiconductor element 20 _L (first lower arm semiconductor devices 20 _LA), the outer end surface in the Y-direction It is arranged inside the Y direction from S _20LA .
In this way, the control terminal 23 can be brought closer to the center of the module main body 21 in the Y direction (the position where the virtual straight line M _HL is arranged), and the entire semiconductor module 2 can be easily miniaturized.

Further, in the present embodiment, the arrangement order of the plurality of control terminals 23 connected to one semiconductor element 20 is the same for all the semiconductor elements 20.
In this way, the arrangement order of the pads 280 in the Y direction can be aligned for all the semiconductor elements 20. Therefore, it becomes possible to use the same type of semiconductor element 20.

Further, as shown in FIG. 63, the control terminal 23 has two curved portions 231 and 232 between the base end portion 238 on the side close to the semiconductor element 20 and the tip end portion 239 on the protruding side. The bending directions of both bending portions 231 and 232 are opposite to each other. Specifically, two curved portions 231 and 232 are curved on opposite sides in the X direction.

<Current sensor>
Next, the structure of the current sensor 8 will be described. As shown in FIGS. 72 and 79, the current sensor 8 of this embodiment includes a plurality of bus bars 81, a sensor IC 82 (see FIG. 73), a signal terminal 84, a mounting portion 85, and a nut holder 86. Shield plate 87 (87 _a , 87 _b ) is provided. As shown in FIG. 79, the bus bar 81 includes an output bus bar 81 _I and a boosted bus bar 81 _L. The output bus bar 81 _I is connected to the semiconductor module 2 constituting the inverter circuit 101. The boost bus bar 81 _L connects the semiconductor module 2 constituting the boost circuit 100 and the reactor 4.

As shown in FIG. 80, the sensor IC 82 is arranged at a position adjacent to each bus bar 81 in the Z direction. The sensor IC 82 of this embodiment uses a GMR element that converts a magnetic field into an electric signal by a GMR effect (Giant Magneto Resistive effect), and has a circuit board that converts the magnetic field into a desired voltage value. The sensor IC 82 is connected to the sensor board 83. A plurality of signal terminals 84 are connected to the sensor board 83. The sensor board 83 is electrically connected to the control circuit board 171 using the signal terminal 84.

As shown in FIGS. 79 and 80, the bus bar 81 is mounted on the mounting portion 85. A pair of shield plates 87 (87 _a , 87 _b ) made of _a magnetic material are arranged at positions sandwiching the sensor IC 82 from the Z direction. Further, as shown in FIG. 79, a nut holder 86 is attached to the mounting portion 85. A nut 860 is inserted into the nut holder 86. The output terminal 88 of the output bus bar 81 _I is fastened to a connector (not shown) using this nut 860.

The sensor IC 82 detects the X-direction component of the magnetic field generated when a current flows through the bus bar 81 and converts it into a desired voltage value. The sensor board 83 plays a role of transmitting this current measurement value to the control circuit board 171 via the signal terminal 84. As shown in FIG. 80, a plurality of sensor ICs 82 are arranged in the X direction. Further, these sensor ICs 82 are sandwiched from the Z direction by the pair of shield plates 87 made of a magnetic material. In this way, the magnetic flux generated from the bus bar 81 next to the bus bar 81 to be measured and directed toward the bus bar 81 to be measured can be guided to the shield plate 87. Therefore, the sensor IC 82 is less likely to be affected by the magnetic field generated from the adjacent bus bar 81, and the X-direction component of the magnetic field generated from the bus bar 81 to be measured can be accurately measured. Therefore, the current value of the bus bar 81 can be measured accurately.

Further, as shown in FIG. 79, the output bus bar 81 _I connects the module connection portion 89 (89 _I ) connected to the AC terminal 22 _A of the semiconductor module 2 and the output terminal 88 fastened to the connector. It is provided with a connecting portion 810 (810 _I ).

Further, as shown in FIGS. 74, 75, and 79, the boost bus bar 81 _L is connected to the module connection portion 89 (89 _L ) connected to the AC terminal 22 _A of the semiconductor module 2 constituting the boost circuit and to the reactor 4. The reactor connecting portion 890 and the connecting portion 810 (810 _L ) connecting them are provided.

As shown in FIGS. 72 and 73, the current sensor 8 of this embodiment includes six output terminals 88. These output terminals 88 are electrically connected to the AC motor. As shown in FIG. 73, the three output terminals 88 _V1 , 88 _U1 , and 88 _W1 located closer to the signal terminal 84 in the X direction are the V-phase and U-phase of the first AC motor 198 (see FIG. 11). Each is electrically connected to the W phase. The other three output terminals 88 _V2 , 88 _U2 , and 88 _W2 are electrically connected to the V phase, U phase, and W phase of the second AC motor 199, respectively.

As shown in FIG. 73, the mounting portion 85 has a terminal holding portion 850 that holds the signal terminal 84. The signal terminal 84 passes through the terminal holding portion 850. The tip 841 of the signal terminal 84 is soldered to the control circuit board 171. The Z-direction position of the end portion 859 on the tip 841 side of the terminal holding portion 850 so that the resin constituting the terminal holding portion 850 is not melted by the solder heat generated when the tip 841 is soldered to the control circuit board 171. Is stipulated. Further, this position is defined so as to sufficiently secure the vibration resistance of the signal terminal 84 (that is, the vibration resistance against vibration transmitted from the outside to the signal terminal 84 via the case 11 and the control circuit board 171). .. Further, when the power conversion device 1 is manufactured, even if the resin constituting the terminal holding portion 850 is warped, the position accuracy of the tip 841 can be sufficiently ensured, and the tip 841 is connected through the control circuit board 171. The Z-direction position of the end 859 of the terminal holding portion 850 is defined so that it can be inserted into the hole.

Further, as shown in FIG. 73, the current sensor 8 of this embodiment includes 13 signal terminals 84. The first signal terminal 84 _A is connected to the ground terminal for the first AC motor, and the second signal terminal 84 _B is connected to the VCS terminal for the first AC motor. Further, the third signal terminal 84 _C and the fourth signal terminal 84 _D output the measured values of the current flowing through the reactor 4, respectively. The fifth signal terminal 84 _E outputs the measured value of the V-phase current of the first AC motor, and the sixth signal terminal 84 _F outputs the measured value of the U-phase current of the first AC motor. Further, the seventh signal terminal 84 _G outputs a measured value of the W phase current of the first AC motor.

The eighth signal terminal 84 _H is NC (No Connect). Further, the ninth signal terminal 84 _I outputs the measured value of the V-phase current of the second AC motor, and the tenth signal terminal 84 _J outputs the measured value of the U-phase current of the second AC motor. Further, the 11th signal terminal 84 _K outputs a measured value of the W phase current of the second AC motor. The 12th signal terminal 84 _L is connected to the VCS terminal for the 2nd AC motor, and the 13th signal terminal 84 _M is connected to the ground terminal for the 2nd AC motor.

In this embodiment, signal terminals 84 (first signal terminal 84 _A , thirteenth signal terminal 84 _M ) connected to the ground are arranged at both ends in the X direction. In this way, it is possible to prevent noise from being superimposed on the signal terminals 84 _{B to} 84 _L arranged between these signal terminals 84 _A and 84 _M. Further, with the above configuration, the ground wiring formed on the sensor substrate 83 can be easily arranged on the outer edge portion of the sensor substrate 83. Therefore, it is possible to prevent noise from being superimposed on the electronic components and wiring arranged on the sensor substrate 83.

Further, in the present embodiment, the order of the signal terminals 84 that output the measured values of the output current is the same as the order of the output bus bars 81 _I. That is, the signal terminals 84 that output the measured values of the output current are the fifth signal terminal 84 _E (V phase of the first AC motor) and the sixth signal terminal 84 _F (U of the first AC motor) from the right side of FIG. 73. Phase), 7th signal terminal 84 _G (W phase of 1st AC motor), 9th signal terminal 84 _I (V phase of 2nd AC motor), 10th signal terminal 84 _J (U phase of 2nd AC motor) , 11th signal terminal 84 _K (W phase of the second AC motor). Further, the output terminals 88 are also V-phase, U-phase, W-phase of the first AC motor, and V-phase, U-phase, and W-phase of the second AC motor from the right side of FIG. 73.

Further, as shown in FIG. 81, the connecting portion 810 includes an IC facing portion 810 _S facing the sensor IC 82 and a module side portion 810 _M protruding from the IC facing portion 810 _{S in the} Z direction and connected to the module connecting portion 89. It has a terminal side portion 810 _T that protrudes from the IC facing portion 810 _{S in the} Z direction and is connected to the output terminal 88. The sensor IC 82 is arranged on the side opposite to the protruding side of the module side portion 810 _M and the terminal side portion 810 _T of the IC facing portion 810 _S.
In this way, the sensor IC 82 can be arranged at a position away from the semiconductor module 2 and the connector connected to the output bus bar 81 _I. Therefore, it is possible to reduce the noise superimposed on the sensor IC 82 from the semiconductor module 2 and the connector.

As shown in FIGS. 73 and 79, the nut holder 86 is formed with a plurality of groove portions 865 recessed in the Y direction. The individual grooves 865 are interposed between two output terminals 88 adjacent to each other in the X direction. As a result, the creepage distance between the two output terminals 88 adjacent to each other in the X direction is lengthened, and the creepage current is suppressed.

As shown in FIGS. 72 and 78, the mounting portion 85 has two fixing portions 851, _a first fixing portion 851 _a and a second fixing portion 851 _b . The mounting portion 85 is fastened to the case 11 by inserting bolts into these two fixing portions 851 _a and 851 _b . As shown in FIG. 78, the first fixed portion 851 _a and the second fixed portion 851 _b are from the module connecting portion 89, the reactor connecting portion 890, and the signal terminal 84 rather than the central portion M of the mounting portion 85 in the Y direction. It is formed in a distant position. Further, a protruding portion 852 protrudes from the mounting portion 85 toward the output terminal 88 in the Y direction. A second fixed portion 851 _b is formed on the protruding portion 852. The second fixed portion 851 _b is formed at a position farther from the module connecting portion 89 than the output terminal 88 in the Y direction.

In this embodiment, the influence of the fastening load on the members other than the case 11 is suppressed, and the formation positions and the X directions of the two fixing portions 851 _a and 851 _b are taken into consideration in consideration of the overall physique and vibration resistance of the current sensor 8. The interval has been determined. The resin members (mounting portion 85, projecting portion 852) existing around the fixed portion 851 have a shape and shape so as to be able to suppress resin creep and sufficiently withstand the cold stress of the energized portion (that is, the bus bar 81). The dimensions are designed.

As shown in FIG. 75, in this embodiment, the X-direction width W ₁ of the module connecting portion 89 _L of the boost bus bar 81 _L includes an X-direction width W ₂ of the IC facing portion 810 _S of the booster bus bar 81 _L (see FIG. 79) equal.

Further, as shown in FIG. 75, the boost bus bar 81 _L has a first module connection portion 89 _LA arranged at a position close to the reactor 4 (not shown) in the X direction and a second module connection portion 89 _LA arranged at a position far from the reactor 4. It has two module connections 89 _L with 89 _LB. The first module side portion 810 _MA is connected to the first module connection portion 89 _LA , and the second module side portion 810 _MB is connected to the second module connection portion 89 _LB. The second module side portion 810 _MB is branched from the first module side portion 810 _MA arranged at a position close to the reactor 4 in the X direction. That is, the second module side portion 810 _MB has a first portion 811 protruding in the X direction from the first module side portion 810 _MA, and a second portion 812 extending in the Z direction from the first portion 811. A second module connecting portion 89 _LB is connected to the second portion 812.
With the above configuration, the length of the current path from the reactor connection portion 890 to the individual module connection portions 89 _LA and 89 _LB can be shortened.

Further, as shown in FIG. 75, in this embodiment, a plurality of sensor ICs 82 are arranged in the X direction. It is desirable that the distance between the two sensor ICs 82 adjacent to each other in the X direction be as wide as possible in order to make them less susceptible to the influence of the disturbance magnetic field generated from each sensor IC82. Further, from the viewpoint of miniaturizing the current sensor 8, it is preferable to narrow the interval. In this embodiment, the distance between the two sensors IC 82 adjacent to each other in the X direction is determined so that these can be balanced.

Further, as shown in FIG. 75, the module side inclined portion 819 is formed on the side surface of the module side portion 810 _M of the connecting portion 810 of the output bus bar 81 _I. The module-side inclined portion 819 is inclined so as to move from the module connecting portion 89 toward the sensor IC 82 in the Z direction toward the X direction from the bus bar (boost-boosting bus bar 81 _L ) existing on the most downstream side of the refrigerant.

Further, as shown in FIG. 79, a sensor-side inclined portion 818 is formed on the side surface of the IC facing portion 810 _S of the connecting portion 810. The sensor-side inclined portion 818 is inclined so as to move toward the output terminal 88 side in the Y direction and away from the boost bus bar 81 _L in the X direction. The angle formed by the module-side inclined portion 819 (see FIG. 75) and the straight line parallel to the Z direction (not shown) is the angle formed by the sensor-side inclined portion 818 and the straight line parallel to the Y direction (not shown). Smaller than

Further, as shown in FIG. 79, a connector-side inclined portion 817 is formed on the side surface of the terminal-side portion 810 _T of the connecting portion 810. The angle between the module-side inclined portion 819 (see FIG. 75) and the straight line parallel to the Z direction (not shown) is any of the individual connector-side inclined portions 817 and the straight line parallel to the Z direction. Smaller than the angle.

As shown in FIG. 81, a housing recess 853 is formed in the mounting portion 85. The accommodating recess 853 is open in the direction in which the module side portion 810 _M and the terminal side portion 810 _T of the connecting portion 810 protrude from the IC facing portion 810 _S (lower side in FIG. 81). The second shield plate 87 _b is accommodated in the accommodating recess 853. The sensor IC 82 and the first shield plate 87 _a are provided on the side opposite to the protruding direction (upper side in FIG. 81). The sensor IC 82 and the first shield plate 87 _a are exposed from the mounting portion 85.

As shown in FIGS. 76, 77, and 81, the nut holder 86 is formed with a holder inclined surface 869 on the side opposite to the side where the nut 860 is provided in the Y direction. The holder inclined surface 869 is inclined so that the distance from the sensor IC 82 in the Z direction to the module connecting portion 89 in the Y direction gradually increases. The holder inclined surface 869 is substantially parallel to the cooling pipe inclined surface 369 (see FIG. 14) formed in the cooling pipe 3. That is, the angle formed by the holder inclined surface 869 and the straight line parallel to the Z direction (not shown) and the angle formed by the cooling pipe inclined surface 369 and the straight line parallel to the Z direction are equal to each other.
With the above configuration, the cooling pipe 3 and the nut holder 86 are prevented from interfering with each other, they are brought close to each other, and the insulation between the cooling pipe 3 and the output terminal 88 is secured by the nut holder 86. , The facing area between the nut holder 86 and the cooling pipe 3 is increased. As a result, the output terminal 88 can be efficiently cooled via the nut holder 86.

Further, as shown in FIG. 81, the opening 854 of the accommodating recess 853 is covered with the nut holder 86.

Further, as shown in FIGS. 76, 77, and 81, the nut holder 86 is formed with a holder recess 868. The holder recess 868 is arranged between the holder inclined surface 869 and the output terminal 88 in the Y direction. The holder recess 868 is formed so as to be recessed on the side where the sensor IC 82 is arranged in the Z direction.

As shown in FIG. 78, the connection portion 840 between the signal terminal 84 and the sensor substrate 83 and the sensor IC 82 (see FIG. 81) are arranged at both ends of the mounting portion 85 in the Y direction. Further, the connection portion 840 and the first shield plate 87 _a are arranged at positions where they do not overlap each other when viewed from the X direction.

Further, as shown in FIG. 78, the module connection portion 89 of the output bus bar 81 _I is arranged on one side of the mounting portion 85 in the Y direction, and the output terminal 88 is arranged on the other side of the mounting portion 85 in the Y direction. Has been done.

As shown in FIG. 79, the IC facing portions 810 _S of the plurality of output bus bars 81 _I and the boost bus bar 81 _L are arranged in a row in the X direction. The terminal side portions 810 _T of the plurality of output bus bars 81 _I are also arranged in a row in the X direction. Further, a plurality of module-side portions 810 _M (see FIG. 75) are also arranged in a row in the X direction.
In this way, since a plurality of sensor ICs 82 can be arranged in a row, the sensor substrate 83 connected to the sensor ICs 82 can be miniaturized. Further, since the output terminal 88 and the module connecting portion 89 can also be arranged in a line in the X direction, the fastening work between the output terminal 88 and the connector and the welding work between the module connecting portion 89 and the semiconductor module 2 can be easily performed. At the same time, the reliability of these connections can be increased. Further, with the above configuration, since the sensor substrate 83 can be made into one sheet, the manufacturing cost of the current sensor 8 can be reduced. That is, if the sensor ICs 82 are arranged in two rows and two sensor substrates 83 are provided corresponding to each row, the manufacturing cost of the current sensor 8 becomes high. However, if the sensor ICs 82 are arranged in a row and the sensor substrate 83 is made into one as in this embodiment, the manufacturing cost of the current sensor 8 can be reduced.

Further, as shown in FIG. 79, the mounting portion 85 is formed with two positioning pins 857 (857 _a , 857 _b ) for one output bus bar 81 _I. The positioning pin 857 is inserted into the through hole 815 formed in the IC facing portion 810 _S of the connecting portion 810. The positioning pin 857 is arranged at a position that does not overlap with the sensor IC 82 when viewed from the Z direction. One of the two positioning pins 857, the positioning pin 857 _a, is provided at a position close to the terminal side portion 810 _T of the connecting portion 810 in the Y direction, and the other positioning pin 857 _b is the connecting portion in the Y direction. It is provided at a position close to the module side portion 810 _M of the 810. The connecting portion 810 _L of the reactor bus bars 81 _L includes a first 1IC opposing portion 810 _SA of the first 2IC opposing portion 810 _SB, the two IC opposing portions 810 _S. Of these two IC facing portions 810 _S , the positioning pin 857 is fitted to the first IC facing portion 810 _SA arranged at a position far from the reactor 4 in the X direction. Further, the positioning pin 857 does not fit into the second IC facing portion 810 _SB arranged at a position close to the reactor 4 in the X direction.

Further, as shown in FIGS. 73 and 75, the output bus bar 81 _I has a wider width in the X direction in the terminal side portion 810 _T than in the module side portion 810 _M.

Further, as shown in FIG. 79, in this embodiment, the individual bus bars 81 are arranged at positions where the current can be accurately detected by the sensor IC 82. Further, the bending portion and the dimensions of the bus bar 81 are determined in consideration of the arrangement position and strength of the output terminal 88 and the module connection portion 89, the mounting restrictions on the mounting portion 85, and the like.

As shown in FIG. 79, a plurality of rib portions 855 are formed on the mounting portion 85. The individual rib portions 855 are interposed between two output bus bars 81 _I adjacent to each other in the X direction. Rib portion 855 protrudes from the mounting surface of the output bus bar 81 _I, to the same height as the thickness of the output bus bar 81 _I (see Figure 73). The rib portion 855 is formed in a portion of the mounting portion 85 on which the IC facing portion 810 _S of the bus bar 81 is mounted. Further, as shown in FIGS. 72 and 73, the rib portion 855 is also formed in a portion of the mounting portion 85 adjacent to the terminal side portion 810 _T of the bus bar 81. As shown in FIG. 73, a part of the rib portion 855 extends so as to be inclined along the terminal side portion 810 _T. Further, as shown in FIG. 75, the rib portion 855 is also formed in a portion of the mounting portion 85 adjacent to the module side portion 810 _M of the bus bar 81. A predetermined clearance is formed between the rib portion 855 and the output bus bar 81 _I. That is, the position of the output bus bar 81 _I is determined by the positioning pin 857 so that the clearance is formed between the rib portion 855 and the output bus bar 81 _I.
By forming the rib portion 855 in this way, the insulating property between the two output bus bars 81 _I adjacent to each other can be improved. Further, by forming the above clearance, a sufficient spatial insulation distance between two output bus bars 81 _I adjacent to each other can be sufficiently secured, and thermal interference between the two can be suppressed. Further, the insulation between the bent portions of the connecting portion 810 of the output bus bar 81I can be further enhanced. Further, as shown in FIG. 73, the clearance between the two terminal side portions 810 _{T of} the output bus bar 81 _I , which are inclined and adjacent to each other, can be secured, and the insulating property thereof can be further enhanced.

As shown in FIGS. 75 and 79, the boost bus bar 81 _L includes two module connecting portions 89 _L , a reactor connecting portion 890, and a connecting portion 810 _L that connects them, and these are integrally formed. ing. As shown in FIG. 79, the connecting portion 810 _L includes two IC facing portions 810 _S, that is, a first IC facing portion 810 _SA and a second IC facing portion 810 _SB . The first IC facing portion 810 _SA extends in the Y direction. The second IC facing portion 810 _SB is bent so as to approach the reactor 4 from the output terminal 88 side toward the module connecting portion 89 side in the Y direction. Sensor IC 82 _L is arranged on each of these two IC facing portions 810 _SA and 810 _SB (see FIG. 75).
As described above, in this embodiment, the current flowing through the boosted bus bar 81 _L is measured by using the two sensors IC 82 _L. This ensures redundancy. That is, the output bus bar 81 _I can measure the output current by the sensor IC 82 of the other two phases even if the sensor IC 82 of any one of the U phase, the V phase, and the W phase fails. However, if only one sensor IC 82 _L is arranged in the boost bus bar 81 _L , if the sensor IC 82 _L fails, the current cannot be measured. Therefore, in this embodiment, two sensor ICs 82 _L are arranged on the boost bus bar 81 _L.

Further, as shown in FIG. 79, a convex portion 858 is formed on the mounting portion 85. The convex portion 858 projects in the Z direction to the side opposite to the side on which the terminal holding portion 850 protrudes. The signal terminal 84 passes through the convex portion 858 and is connected to the sensor substrate 83.
By forming the convex portion 858 in this way, the rigidity of the entire mounting portion 85 can be increased, and the signal terminal 84 can be protected. Further, since the vibration resistance of the signal terminal 84 can be improved, it becomes easy to protect the sensor substrate 83.

Further, as shown in FIGS. 79 to 81, the second shield plate 87 _b is arranged at a position facing the output bus bar 81 _I via the resin mounting portion 85 in the Z direction. As a result, the insulation between the output bus bar 81 _I and the second shield plate 87 _b is ensured.

Further, as shown in FIG. 79, the output bus bar 81 _I has a portion having a wide width in the X direction and a portion having a narrow width in the X direction. In this embodiment, the sensor IC 82 is arranged at a portion of the output bus bar 81 _I that is wide in the X direction.

Further, as shown in FIG. 80, the current sensor 8 of the present embodiment includes two positioning protrusions 856 protruding from the mounting portion 85 on both sides in the Z direction. These two positioning protrusions 856 are configured to position the two shield plates 87 _a and 87 _b , the sensor substrate 83, and the nut holder 86.

<Reactor>
Next, the reactor 4 will be described. As shown in FIG. 82, the reactor 4 of the present embodiment includes a reactor case 40. A coil (not shown) is housed in the reactor case 40. Then, the coil is sealed in the reactor case 40 by a so-called dust core (not shown) in which magnetic powder is dispersed in an insulating resin. Two coil terminals 41 (see FIG. 88) connected to the coil project from the reactor case 40.

As shown in FIGS. 82 to 87, the reactor case 40 includes a top plate side wall portion 42 _T , a laminated body side wall portion 42 _L , a sensor side wall portion 42 _S , a connection portion side wall portion 42 _C, and a bottom wall 43. Be prepared. The top plate side wall portion 42 _T is arranged at a position adjacent to the top plate 311 in the X direction, and the laminated body side wall portion 42 _L is arranged at a position adjacent to the laminated body 10 in the X direction. Further, the sensor side wall portion 42 _S is arranged on the current sensor 8 side in the Y direction, and the connection portion side wall portion 42 _C is arranged on the connection portion side between the capacitor 7 and the bus bar 5 in the Y direction.

As shown in FIGS. 82 and 83, the reactor case 40 includes an opening 49 opened in the Z direction. The coil terminal 41 projects from the opening 49.

Further, as shown in FIGS. 82, 84, and 86, the load supporting portion 44 projects in the Z direction from the side wall portion 42 _{L of the} laminated body. As shown in FIG. 88, the load support portion 44 comes into contact with the bottom wall portion 119 of the case 11. The pressing force F applied from the pressurizing member 16 to the reactor 4 is received by the load supporting portion 44 so that a large pressing force is not applied to the coil, the dust core, or the like.

As shown in FIGS. 82, 83, and 85, a pair of fastening portions 45 project in the Y direction from the top plate side wall portion 42 _T and the laminated body side wall portion 42 _L. As shown in FIG. 85, female screw portions 46 are formed in the individual fastening portions 45. As shown in FIG. 88, the reactor 4 is fixed to the bottom wall portion 119 of the case 11 by screwing a bolt 499 into the female screw portion 46.

As described above, the pressing force F of the pressurizing member 16 is applied to the reactor 4. Due to this pressing force F, a moment of force R is generated in the reactor 4 as shown in FIG. 88. Therefore, the reactor 4 is pressed against the bottom wall portion 119 from the Z direction. The direction in which the reactor 4 is pressed coincides with the fastening direction of the bolt 499. Therefore, the reactor 4 is strongly fixed in the Z direction by the fastening force of the bolt 499 and the moment R generated by the pressurizing member 16. As a result, even if vibration is applied in the Z direction from the outside, the reactor 4 does not vibrate significantly.

Further, as shown in FIGS. 82, 84, and 86, a laminated body side protrusion 48 _L is formed on the laminated body side wall portion 42 _L. The laminated body side protrusion 48 _L abuts on the cooling pipe 3 included in the laminated body 10. Further, a top plate side protrusion 48 _T is formed on the top plate side wall portion 42 _T. The top plate side protrusion 48 _T comes into contact with the top plate 311.

Figure 83, as shown in FIG. 85, the sensor side wall portion 42 _S, by the fastening portion 45 disposed at both ends in the X direction of the sensor side wall portion 42 _S, the sensor-side recess 47 _S is formed. The signal terminal 84 of the current sensor 8 passes through the sensor-side recess 47 _S and is connected to the control circuit board 171. Further, a connecting portion side wall 42 _C, by a fastening portion 45 disposed at both ends in the X direction of the connecting portion side wall 42 _C, the connecting portion side recess 47 _C is formed. The control wiring of the capacitor 7 passes through the connection portion side recess 47 and is connected to the control circuit board 171. By inserting the signal terminal 84 or the like into the recesses 47 (47 _S , 47 _C ) in this way, these recesses 47 are effectively utilized so as not to become a so-called dead space.

As shown in FIG. 83, the coil terminals 41 (see FIG. 2) are arranged in the region (terminal arrangement region S ₄₁ ) adjacent to the side wall portion 42 _L of the laminated body in the X direction when viewed from the Z direction. The coil terminal 41 is provided in the X direction on the side opposite to the side where the refrigerant introduction pipe 321 and the outlet pipe 322 are arranged (that is, the side where the top plate side wall portion 42 _T is arranged).
In this way, the coil terminal 41 can be arranged at a position close to the bus bar 5 in the X direction, so that the connection distance between the coil terminal 41 and the bus bar 5 can be shortened. Further, since the coil terminal 41 can be arranged at a position away from the introduction pipe 321 and the outlet pipe 322, noise superimposed on the coil terminal 41 from the outside can be reduced.

Further, as shown in FIGS. 84, 86, and 87, the reactor case 40 is formed with two protrusions 48, the above-mentioned laminate side protrusion 48 _L and the top plate side protrusion 48 _T. .. These protrusions 48 abut on the cooling pipe 3 or the top plate 311. As a result, the reactor 4 is cooled.
The protrusion 48 is formed at a position of the reactor 4 including the central portion M in the Z direction when viewed from the X direction. In this way, the central portion M, which generates a large amount of heat, can be cooled by the cooling pipe 3 or the top plate 311. Therefore, the reactor 4 can be cooled efficiently. The protrusions 48 _L and 48 _T of this embodiment are slightly offset toward the control circuit board 171 in the Z direction from the central portion M.

Further, the surface roughness of the surface 480 (see FIG. 86) of the protrusions 48 _L and 48 _T is smaller than that of the surrounding portion. As a result, the surface 480 of the protrusion 48 and the cooling pipe 3 and the like are brought into close contact with each other to improve the cooling efficiency of the reactor 4.

In the present embodiment, the fastening section 45, for the peripheral portion S ₄₆ of the female screw portion 46 (see FIG. 85), and to reduce the surface roughness. Since the peripheral portion S ₄₆ is a portion that comes into contact with the bottom wall portion 119 of the case 11, if the surface roughness is reduced, the heat of the reactor 4 can be easily transferred to the bottom wall portion 119. Therefore, the cooling efficiency of the reactor 4 can be increased.

The reactor case 40 of this embodiment is made of resin. When manufacturing the reactor case 40, the reactor case 40 is first molded using a molding die, and then the surface 480 of the protrusion 48 and the peripheral portion S46 of the female screw portion ₄₆ are cut. As a result, the surface roughness is reduced.

Further, grease having a higher thermal conductivity than the resin constituting the reactor case 40 is applied to the surface 480 (see FIG. 86) of the top plate side protrusion 48 _T. Further, the grease is also applied to the surface 480 of the laminated body side protrusion 48 _L. As a result, the minute gap existing between the surface 480 of these protrusions 48 (48 _T , 48 _L ) and the cooling pipe 3 or the top plate 311 is filled with grease to improve the cooling efficiency of the reactor 4. ing.

Further, in the present embodiment, as shown in FIG. 16, when viewed from the X direction, the wall portion 42 (that is, the laminated body side wall portion 42 _L ) on which the load supporting portion 44 is formed and the pressurizing member 16 are configured to overlap each other. Has been done. This makes it easier for the load support portion 44 to receive the pressing force of the pressurizing member 16.

Further, in the present embodiment, as shown in FIG. 88, a bolt 499 is inserted into the female screw portion 46 of the fastening portion 45, whereby the reactor case 40 is fixed to the bottom wall portion 119 of the case 11. The bolt 499 is inserted from the side opposite to the protruding side of the coil terminal 41 in the Z direction to the vicinity of the center of the fastening portion 45. As a result, the tip of the bolt 499 is brought close to the coil terminal 41. As a result, a part of the heat generated from the coil is transferred to the bottom wall portion 119 via the coil terminal 41 and the bolt 499 to further improve the cooling performance.

Further, as shown in FIGS. 82 and 83, the side wall portion 42 _{L of the} laminated body is formed to be thicker than the other wall portions 42 _T , 42 _S , and 42 _C. Further, the coil terminal 41 is arranged at a position close to the side wall portion 42 _L of the laminated body in the X direction.
In this way, since the laminated body side wall portion 42 _L is formed thick, the rigidity of the laminated body side wall portion 42 _L can be increased. Therefore, it is possible to suppress the deformation of the side wall portion 42 _{L of the} laminated body due to the pressing force applied from the pressurizing member 16. Further, when the side wall portion 42 _L of the laminated body is formed thick, the heat generated from the semiconductor module 2 or the coil can be shielded by the side wall portion 42 _{L of the} laminated body. Therefore, it is possible to suppress the occurrence of thermal interference between the semiconductor module 2 and the coil.

In this embodiment, the side wall portion 42 _{L of the} laminated body is formed thicker than the other wall portions 42 _T , 42 _S , 42 _C , but the present invention is not limited to this, and the side wall portion 42 _{L of the} laminated body is formed to be thicker than the other wall portions 42 _T , 42 _S , 42 _C. The thickness may be the same as that of the wall portions 42 _T , 42 _S , and 42 _C.

<Capacitor module>
Next, the capacitor module 70 will be described.
As shown in FIGS. 89 to 97, the capacitor module 70 includes a plurality of capacitor elements 73, a positive electrode smoothing bus bar 7Pa, a positive electrode filter bus bar 7Pb, and a negative electrode bus bar 7N connected thereto, a mold resin 700, and a discharge resistance substrate 172. And have. In the mold resin 700, a plurality of capacitor elements 73, a positive electrode smoothing bus bar 7Pa, a positive electrode filter bus bar 7Pb, and a negative electrode bus bar 7N are embedded inside. As shown in FIG. 89, the discharge resistance substrate 172 is fixed to the mold resin 700.

As shown in FIGS. 93 and 94, each capacitor element 73 is a film capacitor formed by winding a metallized film. Each capacitor element 73 is arranged so that its winding shaft extends in the Z direction.

The plurality of capacitor elements 73 include a plurality of smoothing capacitor elements 711 which are capacitor elements 73 constituting the smoothing capacitor 71, and a plurality of filter capacitor elements 721 which are capacitor elements 73 constituting the filter capacitor 72. The plurality of smoothing capacitor elements 711 are connected in parallel to each other, and similarly, the plurality of filter capacitor elements 721 are connected in parallel to each other.

As shown in FIG. 94, the smoothing capacitor elements 711 are arranged in a substantially elliptical shape that is long in the X direction when viewed from the Z direction. The smoothing capacitor elements 711 are arranged side by side in a total of nine rows, three rows in the X direction and three rows in the Y direction.

Further, the filter capacitor element 721 is arranged in a posture of having a long substantially elliptical shape in the Y direction when viewed from the Z direction. Two filter capacitor elements 721 are arranged side by side in the Y direction. The two filter capacitor elements 721 are arranged on one side (front side) in the X direction of the smoothing capacitor element 711.

As shown in FIGS. 92 and 93, each capacitor element 73 is provided with electrode surfaces at both ends in the Z direction. Hereinafter, the upper electrode surface of the capacitor element 73 may be referred to as an upper electrode surface 731, and the lower electrode surface may be referred to as a lower electrode surface 732.

A negative electrode bus bar 7N is connected to the lower electrode surfaces 732 of the plurality of capacitor elements 73. As shown in FIGS. 91 to 93 and 95, the negative electrode bus bar 7N has a negative electrode facing portion 71N and a negative electrode extending portion 72N, which will be described later.

The negative electrode facing portion 71N is formed in a rectangular shape having a long shape in the X direction when viewed from the Z direction, and is formed in a plate shape having a thickness in the Z direction. The upper surface of the negative electrode facing portion 71N is arranged so as to face the lower electrode surfaces 732 of the plurality of capacitor elements 73 in the Z direction. The negative electrode facing portion 71N is connected to the lower electrode surfaces 732 of the plurality of capacitor elements 73 on the upper surface thereof.

The negative electrode extending portion 72N extends from the negative electrode facing portion 71N. The negative electrode extension portion 72N includes a negative electrode DDC side connection portion 73N connected to the DC-DC converter 6, a negative electrode module side connection portion 74N connected to the semiconductor module 2, and a negative electrode battery side connection portion connected to the battery B. It has 75N.

As shown in FIG. 91, the negative electrode DDC side connecting portion 73N is arranged on one side of the negative electrode facing portion 71N in the Y direction. The terminal portion of the negative electrode DDC side connection portion 73N connected to the DC-DC converter 6 is exposed from the mold resin 700. Hereinafter, the negative electrode DDC side connection portion 73N side with respect to the negative electrode facing portion 71N in the Y direction is referred to as the Y1 side, and the opposite side is referred to as the Y2 side.

Like the negative electrode DDC side connection portion 73N, the negative electrode module side connection portion 74N also extends from the negative electrode facing portion 71N to the Y1 side. The negative electrode module side connection portion 74N is arranged at a position separated behind the negative electrode DDC side connection portion 73N. The negative electrode module side connection portion 74N extends upward from two locations, a rectangular plate-shaped negative electrode module side base portion 741N that is long in the X direction and short in the Y direction, and the Y1 side edge of the negative electrode module side base portion 741N. It also has a negative electrode module side terminal portion 742N having a thickness in the Y direction. As shown in FIGS. 91 and 92, the two negative electrode module side terminal portions 742N are arranged at the same position in the Z direction and are formed so as to be offset from each other in the X direction. As shown in FIG. 89, of the negative electrode module side connection portions 74N, two negative electrode module side terminal portions 742N are exposed from the mold resin 700, and the terminals electrically connected to the semiconductor module 2 are fastened by bolts 7B. ..

As shown in FIGS. 91 to 93 and 95, the negative electrode battery side connection portion 75N extends from the rear end portion and the Y1 side end portion of the negative electrode facing portion 71N. As shown in FIGS. 91 and 92, the negative electrode battery side connection portion 75N has a negative electrode battery side base portion 751N, a negative electrode battery side vertically elongated portion 752N, and a negative electrode battery side terminal portion 753N. The negative electrode battery side base portion 751N extends in the X direction from the negative electrode facing portion 71N. The vertically long portion 752N on the negative electrode battery side extends downward from the rear end edge of the base portion 751N on the negative electrode battery side and has a thickness in the X direction. The negative electrode battery side terminal portion 753N extends rearward from the lower end edge of the negative electrode battery side vertically long portion 752N and has a thickness in the Z direction. Terminals electrically connected to the battery B are bolted to the negative electrode battery side terminal portion 753N.

As shown in FIGS. 92 and 96, of the plurality of capacitor elements 73, the positive electrode smoothing bus bar 7Pa is connected to the upper electrode surface 731 of the smoothing capacitor element 711, and the positive electrode surface 731 of the filter capacitor element 721 has a positive electrode. The filter bus bar 7Pb is connected.

As shown in FIGS. 96 and 97, the positive electrode smoothing bus bar 7Pa has a positive electrode smoothing facing portion 71Pa and a positive electrode smoothing module side connecting portion 72Pa, which will be described later.
The positive electrode smoothing facing portion 71Pa is formed in a quadrangular shape that is long in the X direction when viewed from the Z direction, and is formed in a plate shape having a thickness in the Z direction. The lower surface of the positive electrode smoothing facing portion 71Pa is arranged so as to face the upper electrode surfaces 731 of the plurality of smoothing capacitor elements 711 in the Z direction. The positive electrode smoothing facing portion 71Pa is connected to the upper electrode surfaces 731 of the plurality of smoothing capacitor elements 711 on the lower surface thereof.

The positive electrode smoothing module side connection portion 72Pa extends from the positive electrode smoothing facing portion 71Pa and is connected to the semiconductor module 2. As shown in FIGS. 93, 96, and 97, the positive electrode smoothing module side connection portion 72Pa has a positive electrode smoothing module side side portion 721 Pa, a positive electrode smoothing module side base portion 722 Pa, and a positive electrode smoothing module side terminal portion 723 Pa. The positive electrode smoothing module side side portion 721Pa extends downward from the positive electrode smoothing facing portion 71Pa and has a thickness in the Y direction. The positive electrode smoothing module side base portion 722Pa extends from the lower end of the positive electrode smoothing module side side portion 721Pa to the Y1 side, and has a rectangular plate shape that is long in the X direction and short in the Y direction. The positive electrode smoothing module side terminal portion 723Pa extends upward from two positions on the Y1 side edge of the positive electrode smoothing module side base portion 722Pa and has a thickness in the Y direction. The two positive electrode smoothing module side terminal portions 723Pa are arranged at the same position in the Z direction and are formed so as to be offset from each other in the X direction. Of the positive electrode smoothing module side connection portion 72Pa, the positive electrode smoothing module side terminal portion 723Pa is exposed from the mold resin 700, and the terminal electrically connected to the semiconductor module 2 is bolted.

As shown in FIGS. 89, 91, and 92, the two negative electrode module side terminal portions 742N and the two positive electrode smoothing module side terminal portions 723Pa are the negative electrode module side terminal portions 742N from the front to the rear in the X direction. , The positive electrode smoothing module side terminal portion 723 Pa, the negative electrode module side terminal portion 742N, and the positive electrode smoothing module side terminal portion 723 Pa, in this order. That is, the negative electrode module side terminal portion 742N and the positive electrode smoothing module side terminal portion 723Pa are alternately arranged in the X direction. Further, the plurality of negative electrode module side terminal portions 742N and the plurality of positive electrode smoothing module side terminal portions 723Pa are arranged at the same position in the Z direction.

As shown in FIG. 96, the positive electrode filter bus bar 7Pb has a positive electrode filter facing portion 71Pb and a positive electrode filter extending portion 72Pb, which will be described later.
The positive electrode filter facing portion 71Pb is formed in a plate shape having a thickness in the Z direction, and its lower surface is arranged so as to face the upper electrode surfaces 731 of the plurality of filter capacitor elements 721 so as to face the Z direction. The positive electrode filter bus bar 7Pb is connected to the upper electrode surface 731 of the filter capacitor element 721 at the positive electrode filter facing portion 71Pb.

The positive electrode filter extending portion 72Pb extends from the positive electrode filter facing portion 71Pb. As shown in FIGS. 92 and 97, the positive electrode filter extension portion 72Pb includes a positive electrode long plate portion 721Pb, a positive electrode DDC side connection portion 73PB connected to the DC-DC converter 6, and a positive electrode filter booster connected to the boost converter. It has a side connection portion 74Pb and a positive electrode battery side connection portion 75PB connected to the battery B.

As shown in FIGS. 91 and 92, the positive electrode long plate portion 721Pb faces the plurality of capacitor elements 73 in the Y direction, and is formed in substantially the entire region from one end to the other end of the plurality of capacitors in the X direction. .. The positive electrode long plate portion 721Pb is arranged on the Y1 side of the plurality of capacitor elements 73.

As shown in FIG. 91, the positive electrode DDC side connection portion 73PB extends from the positive electrode long plate portion 721Pb. The positive electrode DDC side connection portion 73PB is also located on the Y1 side of the plurality of capacitor elements 73. The portion of the positive electrode DDC side connection portion 73PB connected to the DC-DC converter 6 is exposed from the mold resin 700. The positive electrode DDC side connecting portion 73PB is adjacent to the rear of the negative electrode DDC side connecting portion 73N.

As shown in FIG. 97, the positive electrode filter boosting side connection portion 74Pb has a positive electrode filter boosting side side portion 741Pb, a positive electrode filter boosting side base portion 742Pb, and a positive electrode filter boosting side terminal portion 743Pb.

The positive electrode filter boosting side portion 741Pb extends downward from the positive electrode long plate portion 721Pb.

The positive electrode filter boosting side base portion 742Pb extends from the lower end edge of the positive electrode filter boosting side portion 741Pb to the Y1 side, and has a thickness in the Z direction.

The positive electrode filter boosting side terminal portion 743Pb extends upward from the Y1 side edge of the positive electrode filter boosting side base portion 742Pb and has a thickness in the Y direction. The positive electrode filter boosting side terminal portion 743Pb is arranged so as to be adjacent to the front side of the front side negative electrode module side terminal portion 742N of the two negative electrode module side terminal portions 742N. The positive electrode filter boosting side terminal portion 743Pb is formed so as to be exposed from the mold resin 700, and the terminal electrically connected to the boosting converter is bolted.

The positive electrode battery side connection portion 75PB has a positive electrode battery side horizontally long portion 751PB, a positive electrode battery side vertically long portion 752PB, and a positive electrode battery side terminal portion 753PB. The horizontally long portion 751PB on the positive electrode battery side extends from the rear end edge of the long positive electrode plate portion 721Pb to the Y2 side and has a thickness in the X direction. The vertically elongated portion 752PB on the positive electrode battery side extends downward from the end portion on the Y2 side of the horizontally elongated portion 751PB on the positive electrode battery side and has a thickness in the X direction. The positive electrode battery side terminal portion 753PB extends rearward from the lower end of the positive electrode battery side vertically elongated portion 752PB and has a thickness in the Z direction. Terminals electrically connected to the battery B are bolted to the positive electrode battery side terminal portion 753PB. The positive electrode battery side terminal portion 753PB and the negative electrode battery side terminal portion 753N are arranged so as to be adjacent to each other in the Y direction. The positive electrode battery side connection portion 75PB is arranged on the Y2 side of the negative electrode battery side terminal portion 753N.

As shown in FIGS. 89 and 90, the mold resin 700 has a substantially rectangular parallelepiped shape. The mold resin 700 includes the smoothing capacitor element 711 and the filter capacitor element 721 together. As shown in FIG. 89, the discharge resistance substrate 172 is fixed to the lower surface of the mold resin 700.
It has the above basic configuration. Hereinafter, a more detailed configuration of the capacitor module 70 of this embodiment will be described.

The discharge resistance substrate 172 arranged on the lower surface of the mold resin 700 is arranged so as not to overlap the coil terminal 41 of the reactor 4 in the Z direction. That is, the discharge resistance substrate 172 is arranged at a position different from that of the coil terminal 41 in the plane direction orthogonal to the Z direction. Further, in the discharge resistance substrate 172, a predetermined clearance C1 is formed from the connection portion (bolt fastening portion) between the coil terminal 41 of the reactor 4 and the positive electrode DDC side connection portion 73PB of the positive electrode filter bus bar 7Pb of the filter capacitor 72. .. In the present embodiment, a predetermined clearance C1 is formed between the discharge resistance substrate 172 and the connection portion at least in the Y direction.
As a result, it is possible to prevent the coil terminal 41 of the reactor 4 from interfering with the discharge resistance substrate 172. Further, the electrical insulation between the discharge resistance substrate 172 and the coil terminal 41 of the reactor 4 can be ensured. Further, it is possible to suppress thermal interference between the discharge resistance substrate 172 and the coil terminal 41 of the reactor 4.

Further, the discharge resistance substrate 172 has a rectangular plate shape that is rectangular when viewed from the Z direction. The discharge resistance substrate 172 is supported by the mold resin 700 of the capacitor module 70 at five points, four corners and a central portion. The mold resin 700 has five projecting pin portions 700b projecting downward, and the discharge resistance substrate 172 is formed by fitting the projecting pin portions 700b into the through holes formed at the four corners and the center thereof. It is fixed to.
As a result, it is possible to prevent the discharge resistance substrate 172 from vibrating significantly due to resonance caused by the vibration of the capacitor.

Further, as shown in FIGS. 90 and 91, the negative electrode DDC side connection portion 73N and the positive electrode DDC side connection portion 73PB are located on the side where the filter capacitor element 721 of the capacitor module 70 is arranged, that is, at the front end portion in the X direction. It is arranged. The negative electrode DDC side connection portion 73N and the positive electrode DDC side connection portion 73PB are formed at positions close to the DC-DC converter 6. In the present embodiment, the negative electrode DDC side connection portion 73N and the positive electrode DDC side connection portion 73PB are arranged at positions closer to the DC-DC converter 6 than the laminated body 10 in the X direction.
As a result, the connection arrangement structure between the capacitor and the DC-DC converter 6 can be easily simplified and shortened.

Further, as shown in FIG. 91, the positive electrode long plate portion 721Pb of the positive electrode filter bus bar 7Pb is a positive electrode smoothing bus bar 7Pa, a bolt fastening portion between the terminal portion of the capacitor and other parts (positive electrode smoothing module side terminal portion 723Pa, negative electrode module side). A predetermined clearance is formed between the terminal portion 742N and the like) and the smoothing capacitor element 711. As a result, the insulation between the positive electrode filter bus bar 7Pb, the positive electrode smoothing bus bar 7Pa, the bolt fastening portion, and the smoothing capacitor element 711 can be ensured, and thermal interference between them can be suppressed.

Further, the positive electrode long plate portion 721Pb is close to the cooler of the laminated body 10. In the present embodiment, the positive electrode long plate portion 721Pb is located directly above the cooler.
As a result, it is easy to improve the cooling performance around the positive electrode long plate portion 721Pb where the bus bar arrangement is concentrated.

Further, as shown in FIGS. 89 and 91, the negative electrode module side terminal portion 742N and the positive electrode smoothing module side terminal portion 723Pa are arranged in the X direction via a minute space. Similarly, the negative electrode module side terminal portion 742N and the positive electrode filter boosting side terminal portion 743Pb are lined up in the X direction via a minute space. In order to reduce the minute space, it is preferable to use a highly insulating resin for the mold resin 700.
By arranging the connection portions in which the currents flow in opposite directions close to each other, the magnetic fields formed in the surroundings can be formed so as to cancel each other out, and it is easy to reduce the inductance. Further, by arranging them in close proximity as described above, it is easy to reduce the size (in this configuration, particularly the size in the X direction).

Further, in the mold resin 700, the portion other than the portion where the member is embedded inside is formed as thin as possible, thereby reducing the cost and miniaturization.
On the other hand, due to the thinning of the mold resin 700, there is a concern about the problem of moisture resistance in a portion particularly sensitive to humidity such as around the electrode surface of the capacitor element 73. Therefore, in the present embodiment, the moisture-resistant film is interposed between the mold resin 700 and the portion around the electrode surface of the capacitor element 73, which is particularly sensitive to humidity.

Further, as shown in FIG. 93, the negative electrode battery side vertically elongated portion 752N of the negative electrode battery side connecting portion 75N has a crank shape when viewed from the X direction. Specifically, the vertically long portion 752N on the negative electrode battery side is arranged on the upper side and extends straight from the vertically long first portion 754N and the vertically long first portion 754N formed straight in the Z direction, and goes toward the lower side. A vertically long second portion 755N that is inclined toward the Y1 side, which is opposite to the vertically elongated portion 752PB on the positive electrode battery side, and a vertically long third portion that extends downward from the vertically long second portion 755N and is formed straight in the Z direction. It consists of 756N. As described above, the negative electrode battery side vertically elongated portion 752N has a structure offset in the direction away from the positive electrode battery side vertically elongated portion 752PB on the way.
As a result, the distance between the negative electrode battery side terminal portion 753N and the positive electrode battery side terminal portion 753PB can be secured, and it is easy to secure the insulating property between them.
Further, the vertically elongated portion 752N on the negative electrode battery side has a shape away from the vertically elongated portion 752PB on the positive electrode battery side from the middle as described above. Therefore, it is easy to secure the strength of the vertically long portion 752N on the negative electrode battery side. Further, it is easy to reduce the thickness of the portion of the mold resin 700 that includes the vertically elongated portion 752N on the negative electrode battery side and the vertically elongated portion 752PB on the positive electrode battery side.

Further, as shown in FIG. 92, the positive electrode smoothing bus bar 7Pa and the negative electrode bus bar 7N are arranged to face each other. Specifically, the positive electrode smoothing module side base portion 722Pa and the negative electrode module side base portion 741N of the positive electrode smoothing bus bar 7Pa face each other in the Z direction. As a result, the inductance can be reduced. An insulating member 7C such as an insulating sheet is interposed between the positive electrode smoothing bus bar 7Pa and the negative electrode bus bar 7N.

Further, as shown in FIG. 95, a predetermined clearance C2 is formed between the negative electrode module side base portion 741N and the positive electrode smoothing module side terminal portion 723 Pa. Further, a predetermined clearance C3 is also formed between the positive electrode smoothing module side base portion 722Pa and the negative electrode module side terminal portion 742N. An insulating member 7C is arranged in each of the clearances. That is, when viewed from the Z direction, the insulating member 7C is arranged in each of the clearances.
As a result, it is easy to secure the insulation distance, and it is easy to simplify the shape of the insulating member 7C.

Further, the insulating member 7C is also arranged between the negative electrode module side base portion 741N and the positive electrode filter boosting side terminal portion 743Pb, and between the positive electrode smoothing module side base portion 722Pa and the negative electrode battery side connection portion 75N. This makes it easy to ensure insulation. Further, it is easy to bring the negative electrode module side base portion 741N and the positive electrode smoothing module side base portion 722Pa closer to each other while ensuring the insulating property.

The positive electrode filter boosting side connection portion 74Pb is located on the side of the capacitor module 70 near the filter capacitor 72. The positive electrode filter boosting side connecting portion 74Pb is arranged in front of the negative electrode module side connecting portion 74N and the positive electrode smoothing module side connecting portion 72Pa. Therefore, it is easy to simplify the arrangement structure.

The thickness of the positive electrode long plate portion 721Pb is thicker than the thickness of the positive electrode filter facing portion 71Pb.
Therefore, it is easy to secure the heat capacity of the positive electrode long plate portion 721Pb. Here, since the positive electrode long plate portion 721Pb is densely packed with bus bars and the like and easily receives heat, it is possible to effectively suppress the temperature rise of the bus bar by securing the heat capacity of the positive electrode long plate portion 721Pb. it can. Further, as described above, it is easy to secure the strength of the positive electrode long plate portion 721Pb formed in substantially the entire region from one end to the other end in the X direction of the plurality of capacitors, and it is possible to prevent the positive electrode long plate portion 721Pb from bending. It's easy to do. Further, it can withstand the load when the terminal of another member is fastened to the terminal of the positive electrode filter bus bar 7Pb.

Further, as shown in FIG. 91, the negative electrode DDC side connection portion 73N and the positive electrode DDC side connection portion 73PB are arranged closer to the filter capacitor element 721 than the smoothing capacitor element 711 in the X direction. In the present embodiment, the portion of the negative electrode DDC side connection portion 73N and the positive electrode DDC side connection portion 73PB connected to the DC-DC converter 6 is located at the front end of the capacitor module 70.
As a result, it is easy to secure the insulation between the negative electrode DDC side connection portion 73N and the positive electrode DDC side connection portion 73PB and the smoothing capacitor element 711. Therefore, it is not necessary to arrange the insulating member 7C between them, or the insulating member 7C can be made smaller, and it is easy to realize miniaturization as a whole.

The thickness of the negative electrode battery side connection portion 75N is thicker than the thickness of the negative electrode facing portion 71N. Similarly, the thickness of the positive electrode battery side connection portion 75PB is larger than the thickness of the negative electrode facing portion 71N. Further, the thickness of the negative electrode battery side connection portion 75N and the thickness of the positive electrode battery side connection portion 75PB are equivalent.
As a result, it is easy to secure the strength of the negative electrode battery side connection portion 75N and the positive electrode battery side connection portion 75PB. Therefore, it can sufficiently withstand the load when the terminal connected to the battery B is connected to the negative electrode battery side connection portion 75N and the positive electrode battery side connection portion 75PB.

As shown in FIG. 96, when viewed from above in the Z direction, an insulating member 7C is arranged between the bolt 7B connected to the negative electrode module side terminal portion 742N and the positive electrode long plate portion 721Pb.
As a result, it is easy to secure the insulation between the bolt 7B connected to the negative electrode module side terminal portion 742N, the positive electrode filter bus bar 7Pb, and the positive electrode smoothing bus bar 7Pa.

As shown in FIG. 91, the negative electrode module side base portion 741N of the negative electrode bus bar 7N is offset from the negative electrode facing portion 71N in the Z direction. In the present embodiment, the negative electrode module side base portion 741N is arranged at a position shifted downward with respect to the negative electrode facing portion 71N.
As a result, the distance between the negative electrode module side base portion 741N and the positive electrode smoothing module side terminal portion 723 Pa can be increased, and it is easy to secure the insulating property between them. Further, it is easy to reduce the region where the negative electrode module side connection portion 74N of the negative electrode bus bar 7N and the positive electrode long plate portion 721Pb overlap in the Y direction, thereby ensuring the insulation knowledge between the negative electrode bus bar 7N and the positive electrode filter bus bar 7Pb. Cheap.

The capacitor module 70 is fixed to the cover 131 on the upper surface of the mold resin 700. The upper surface of the mold resin 700 has support convex portions 700a protruding upward at two positions, and is fixed to the cover 131 by fitting the support convex portions 700a into the through holes formed in the cover 131. The support convex portions 700a are formed on the upper surface of the mold resin 700 at both ends on the diagonal DL or at positions close to the ends. In particular, the first support convex portion 700a is formed on the upper surface of the portion of the mold resin 700 that includes the negative electrode battery side connection portion 75N and the positive electrode battery side connection portion 75PB, and the mold passes through the first convex portion. A second support convex portion 700a is formed on the diagonal DL of the resin 700 at an end opposite to the first support convex portion 700a. This diagonal DL is the longest diagonal DL on the upper surface of the mold resin 700.
By fixing the capacitor module 70 to the cover 131 at two places, it is possible to improve productivity and reduce the cost as compared with the case where the capacitor module 70 is fixed to the cover 131 at four places of the capacitor module 70. Further, vibration resistance can be improved by forming support convex portions 700a on both ends of the diagonal line DL on the upper surface of the mold resin 700 and fixing the capacitor module 70 to the cover 131 by the support convex portions 700a. Further, since the support convex portion 700a is separated from the exposed portion of the negative electrode battery side terminal portion 753N and the positive electrode battery side terminal portion 753PB in the Z direction, productivity can be easily improved. In the present embodiment, the support convex portion 700a is formed on the opposite side (that is, upper side) of the negative electrode battery side terminal portion 753N and the positive electrode battery side terminal portion 753PB from the protruding side (that is, the upper side) of the mold resin 700. An adhesive may be further provided between the upper surface of the mold resin 700 and the cover 131.

As shown in FIG. 99, the main surface of the capacitor module 70 constitutes a supported main surface 701 supported by the case cover 131. The supported main surface 701 is composed of the surface of the mold resin 700. The capacitor module 70 is supported by the case cover 131 on the supported main surface 701 formed of the surface of the mold resin 700. Therefore, the heat of the capacitor element 73 is dissipated directly from the surface of the mold resin 700 to the case cover 131. This makes it easy to improve the heat dissipation of the capacitor module 70. Further, the supported main surface 701 is composed of the main surface of the capacitor module 70. Therefore, the heat of the capacitor module 70 can be efficiently dissipated from the supported main surface 701 to the case cover 131.

The upper electrode surface 731 is arranged so as to face the supported main surface 701 side of the capacitor module 70. It is easy to efficiently dissipate the heat of the capacitor element 73 to the case cover 131 via the upper electrode surface 731 and the supported main surface 701. In this embodiment, the upper electrode surface 731 is parallel to the supported main surface 701.

The positive side filter bus bar 7Pb has a positive electrode long plate portion 721Pb formed parallel to a surface formed continuously with a supported main surface 701 on the surface of the capacitor module 70. Therefore, the heat of the capacitor element 73 can be efficiently dissipated from the surface formed continuously with the supported main surface 701 via the positive electrode long plate portion 721Pb, that is, from a surface other than the supported main surface 701. it can. In the present embodiment, the positive electrode long plate portion 721Pb is formed parallel to the surface of the capacitor module 70 on the X1 side. The positive electrode long plate portion 721Pb is long in the X direction. The positive electrode long plate portion 721Pb is formed in substantially the entire region from one end to the other end of the plurality of capacitor elements 73 in the X direction.

As shown in FIG. 98, the mold resin 700 has a substantially rectangular parallelepiped shape that is long in the X direction and short in the Y direction. In the present embodiment, the capacitor module 70 does not have a case dedicated to it, and substantially the entire surface of the mold resin 700 constitutes the entire surface of the capacitor module 70. The capacitor module 70 has a main surface on each of a lower surface and an upper surface. The main surface of the mold resin 700 facing upward is the supported main surface 701. The main surface of the capacitor module 70 is a surface facing the thickness direction of the capacitor module 70. In the present embodiment, the main surface of the capacitor module 70 has a larger area than the side surface of the capacitor module.

As shown in FIG. 90, the capacitor module 70 is supported by the case cover 131 at a position deviated from the capacitor element 73 when viewed from the normal direction of the supported main surface 701. That is, the support convex portion 700a is formed at a position where it does not overlap with the capacitor element 73 in the Z direction. Therefore, it is possible to suppress the vibration from the case cover 131 being directly transmitted to the capacitor element 73 in the capacitor module 70, and it is possible to improve the vibration resistance of the capacitor element 73.

As shown in FIG. 99, in the capacitor module 70, the opposite side surface 702, which is the surface opposite to the supported main surface 701, is arranged so as to face other parts in the case cover 131. In this embodiment, the opposite side surface 702 faces the reactor 4, the semiconductor module 2, and the cooler 3 in the Z direction. Therefore, it is easy to reduce the size of the entire power conversion device 1. Further, since the heat of the capacitor module 70 is mainly dissipated from the supported main surface 701 to the case cover 131, the surface of the capacitor module 70 opposite to the supported main surface 701 is used with other parts in the case cover 131. Even if they are arranged so as to face each other, the capacitor module 70 does not easily affect other parts by heat.

<DC-DC converter>
Next, the DC-DC converter will be described.
As shown in FIG. 100, the DC-DC converter 6 includes a transformer 63, a primary semiconductor component 61, a secondary semiconductor component 62, a choke coil 64 (see FIG. 15), and a circuit board 65. First, an outline of each component will be described.

The transformer 63 has a primary coil and a secondary coil.

The primary side semiconductor component 61 is connected to the primary coil side of the transformer 63. The primary side semiconductor component 61 is composed of a semiconductor module containing a plurality of switching elements. As the switching element, for example, MOSFET or IGBT can be used. The primary semiconductor component 61 does not necessarily have to be a semiconductor module, and may be, for example, a discrete semiconductor component.

The secondary side semiconductor component 62 is connected to the secondary coil side of the transformer 63. The secondary side semiconductor component 62 includes a semiconductor module containing a plurality of switching elements. As this switching element, for example, MOSFET or IGBT can be used. However, the secondary semiconductor component 62 may be a diode module containing a plurality of diodes. Further, the secondary semiconductor component 62 may be a discrete semiconductor component.

The choke coil 64 is connected to the secondary semiconductor component 62 and constitutes a smoothing circuit together with the capacitor.

A control circuit is formed on the circuit board 65. The control circuit is configured to perform on / off control of the switching element of the primary side semiconductor component 61 and the switching element of the secondary side semiconductor component 62. Therefore, the signal terminal of each switching element, for example, the gate terminal of the MOSFET is connected to the control circuit of the circuit board 65.

In the present embodiment, the primary side semiconductor component 61 and the secondary side semiconductor component 62 are directly mounted on the circuit board 65. The semiconductor module, which is the primary side semiconductor component 61 and the secondary side semiconductor component 62, includes a drawer terminal 60. Then, the drawer terminal 60 is directly connected to the circuit board 65. Here, the extraction terminal 60 can be a signal terminal connected to a gate or the like of a switching element. Further, the extraction terminal 60 connected to the source or drain of the switching element or the like may be directly connected to the circuit board 65.

Next, the arrangement relationship of each component, the arrangement of the DC-DC converter 6 in the entire power conversion device 1, and the like will be described.

Of the electronic components of the transformer 63, the primary semiconductor component 61, the secondary semiconductor component 62, and the choke coil 64, the two electronic components are in the normal direction of the circuit board 65 (in this embodiment, the X direction). ) Consists of the first laminated body 601 and the second laminated body 602. In the present embodiment, the first laminated body 601 includes a transformer 63 and a primary semiconductor component 61. The second laminated body 602 includes a choke coil 64 and a secondary semiconductor component 62.

The circuit board 65 is interposed between a pair of electronic components constituting the first laminated body 601 and between a pair of electronic components constituting the second laminated body 602. In this embodiment, the circuit board 65 is interposed between the transformer 63 and the primary semiconductor component 61, and is interposed between the choke coil 64 and the secondary semiconductor component 62. The transformer 63 and the choke coil 64 are arranged on the same surface side of the circuit board 65. In this embodiment, the transformer 63 and the choke coil 64 are arranged on the front surface of the circuit board 65. Further, the primary semiconductor component and the secondary semiconductor component are arranged on the same surface side of the circuit board 65. In this embodiment, the primary semiconductor component and the secondary semiconductor component are arranged on the rear surface of the circuit board 65.

In the DC-DC converter 6, the surface on which the semiconductor components (primary side semiconductor component 61 and secondary side semiconductor component 62) are arranged is arranged on the cooler side of the laminate 10.
As a result, the semiconductor component can be positively dissipated.

The longitudinal direction of the primary semiconductor component 61 is the Z direction, which is the longitudinal direction of the cooling pipe 3, that is, the direction orthogonal to the Y direction. Similarly, the longitudinal direction of the secondary semiconductor component 62 is the Z direction, which is the longitudinal direction of the cooling pipe 3, that is, the direction orthogonal to the Y direction. The primary side semiconductor component 61 and the secondary side semiconductor component 62 are arranged side by side in the lateral direction, that is, the Y direction of each component.
Therefore, the DC-DC converter 6 can be arranged between the introduction side pipe 33a and the outlet side pipe 33b of the cooler without increasing the size of the power conversion device 1.

Further, the circuit board 65 projects in one of the directions (Z direction) orthogonal to the longitudinal direction (Y direction) of the cooling pipe 3 in the cooler.
Therefore, it is easy to reduce the dead space, which leads to the miniaturization of the power conversion device 1.

The above-mentioned "source or the like" means a source when the switching element is a MOSFET, but means an emitter when the switching element is an IGBT. Similarly, the above-mentioned "drain or the like" means a drain when the switching element is a MOSFET, but means a collector when the switching element is an IGBT.

<DC-DC converter holding structure (1)>
As shown in FIG. 101, the holding structure of the DC-DC converter 6 includes a DDC case 66, a heat generating portion 6a, a pressing member 67, and a heat radiating member 68. The DDC case 66 has a DDC bottom wall 661, a DDC facing wall 663 facing the DDC bottom wall 661, and a DDC side wall 662 connecting the DDC bottom wall 661 and the DDC facing wall 663. Further, the DDC case 66 has thermal conductivity. In this embodiment, the DDC case 66 is a part of the case 11. The heat generating portion 6a is placed on the surface of the DDC bottom wall 661 on the DDC facing wall 663 side. The heat generating portion 6a may have a primary semiconductor component 61 and a transformer 63. The pressing member 67 is arranged between the heat generating portion 6a and the DDC facing wall 663. Further, the pressing member 67 presses the heat generating portion 6a toward the DDC bottom wall 661 side. The heat radiating member 68 is in contact with both the heat generating portion 6a and the DDC facing wall 663. Further, the heat radiating member 68 is composed of a member separate from the pressing member 67. Further, the heat radiating member 68 has thermal conductivity. The heat radiating member 68 faces the heat generating portion 6a and the DDC in at least a part of the region that does not overlap with the pressing member 67 when viewed from the facing direction (X direction in this embodiment) between the DDC bottom wall 661 and the DDC facing wall 663. It is in contact with both walls 663.

Here, as described above, the heat generating portion 6a is placed on the surface of the DDC bottom wall 661 on the DDC facing wall 663 side. Further, the heat radiating member 68 is in contact with both the heat generating portion 6a and the DDC facing wall 663, is composed of a separate member from the pressing member 67, and has thermal conductivity. Therefore, the heat of the heat generating portion 6a is dissipated from the lower side of the heat generating portion 6a to the DDC bottom wall 661 of the DDC case 66, and from the upper side of the heat generating portion 6a via the heat radiating member 68 to the DDC facing wall of the DDC case 66. The heat is dissipated to 663. That is, the heat of the heat generating portion 6a is dissipated to the DDC case 66 from both the upper side and the lower side. Therefore, it is possible to efficiently dissipate heat from the heat generating portion 6a without using a plurality of coolers. Therefore, the power conversion device 1 can be easily reduced in size and cost.

Further, the heat radiating member 68 covers both the heat generating portion 6a and the DDC facing wall 663 in at least a part of the region that does not overlap with the pressing member 67 when viewed from the opposite direction of the DDC bottom wall 661 and the DDC facing wall 663. Are in contact. Therefore, it is easy to promote heat transfer from the heat generating portion 6a to the DDC facing wall 663.

Further, the holding structure of the DC-DC converter 6 has a pressing member 67 that presses the heat generating portion 6a toward the DDC bottom wall 661 side. Therefore, in addition to ensuring contact between the heat generating portion 6a and the DDC bottom wall 661 and easily dissipating the heat of the heat generating portion 6a to the DDC bottom wall 661 side, the heat generating portion 6a is stably fixed to the DDC case 66. be able to. That is, the holding structure of the DC-DC converter 6 can secure the heat dissipation of the heat generating portion 6a while stably fixing the heat generating portion 6a to the DDC case 66.

The DDC case 66 is used, for example, by thermally contacting a cooler having a refrigerant flow path through which a refrigerant can flow. However, the present invention is not limited to this, and the DDC case 66 itself may adopt a case having a refrigerant flow path, and the DDC case 66 itself may form a cooler. The DDC case 66 has properties of thermal conductivity and noise shielding. The DDC case 66 is made of metal. Therefore, the heat transferred from the heat generating portion 6a to the DDC case 66 can be easily transferred to the outside of the DDC case 66 or to the refrigerant flowing through the refrigerant flow path formed in the DDC case 66. In this embodiment, the DDC case 66 is made of aluminum.

As described above, the DDC case 66 has a DDC bottom wall 661, a DDC side wall 662, and a DDC facing wall 663. As shown in FIG. 103, the DDC side wall 662 has a pair of first side walls 662a facing each other in the Z direction and a pair of second side walls 662b facing each other orthogonally in both the X direction and the Z direction. At least a part of the DDC side wall 662 is arranged so as to face the heat generating portion 6a. In the present embodiment, the pair of first side wall 662a and the pair of second side wall 662b are arranged so as to be close to each other and face the side surface of the heat generating portion 6a. The pair of first side walls 662a and the pair of second side walls 662b may be in contact with the side surfaces of the heat generating portion 6a. The DDC side wall 662 is formed so as to cover the heat generating portion 6a from all sides when viewed from the X direction. That is, the DDC side wall 662 covers the heat generating portion 6a from both sides in the Z direction and both sides in the Y direction when viewed from the X direction. Therefore, when electromagnetic noise is generated from the components constituting the heat generating portion 6a, it is easy to prevent the electromagnetic noise from leaking to the outside of the DDC case 66. Further, it is easy to prevent electromagnetic noise emitted from the electronic components arranged outside the DDC case 66 from entering the inside of the DDC case 66 and adversely affecting the electronic components arranged inside the DDC case 66.

As shown in FIG. 101, the DDC bottom wall 661 and the DDC side wall 662 are integrally formed with each other. The DDC bottom wall 661 and the DDC side wall 662 and the DDC facing wall 663 are configured as separate bodies from each other. Not limited to this, as shown in FIG. 104, the DDC side wall 662 and the DDC facing wall 663 are integrally formed, and the DDC side wall 662 and the DDC facing wall 663 and the DDC bottom wall 661 are separately configured. You can also. In the present embodiment, the DDC bottom wall 661, the DDC side wall 662, and the DDC facing wall 663 are all made of aluminum.

As shown in FIGS. 101 and 102, the DDC facing wall 663 covers a pair of first side walls 662a and a pair of second side walls 662b from above. As shown in FIG. 101, the DDC facing wall 663 is bolted to the upper end surface of the DDC side wall 662. A bolt insertion hole (not shown) is formed in the DDC facing wall 663. Then, the DDC facing wall 663 is bolted to the DDC side wall 662 by inserting the bolt B into the bolt insertion hole and screwing the bolt B into the bolt screwing hole 662c formed on the upper surface of the DDC side wall 662. ing. As a result, the lower surface of the DDC facing wall 663 and the upper end surface of the DDC side wall 662 are pressed against each other.

As shown in FIG. 103, a heat generating portion 6a is arranged inside the DDC case 66. When viewed from the X direction, the heat generating portion 6a is arranged between the pair of first side walls 662a and between the pair of second side walls 662b.

As shown in FIG. 101, the heat generating portion 6a has a laminated body 600 in which a plurality of components constituting the DC-DC converter 6 are laminated in the X direction. In the present embodiment, the laminated body 600 is formed by laminating two components (for example, a primary semiconductor component 61 and a transformer 63) in the X direction. Here, the primary side semiconductor component 61 is arranged on the most DDC bottom wall 661 side of the laminated body 600. Therefore, the heat of the primary semiconductor component 61, which tends to generate a relatively large amount of heat, can be efficiently dissipated to the DDC bottom wall 661. The primary semiconductor component 61 is arranged on the upper surface of the DDC bottom wall 661, and the transformer 63 is arranged on the primary semiconductor component 61. The primary semiconductor component 61 and the transformer 63 are arranged in such a posture that the thickness direction is the X direction, respectively. Then, the lower surface of the primary semiconductor component 61 is in surface contact with the upper surface of the DDC bottom wall 661.
As described above, the heat generating portion 6a has a laminated body 600 in which a plurality of components constituting the DC-DC converter 6 are laminated in the X direction. Therefore, the heat of the lowermost component can be efficiently dissipated from the DDC bottom wall 661 of the DDC case 66, and the heat of the uppermost component can be efficiently dissipated from the DDC facing wall of the DDC case 66 via the heat dissipation member 68. Heat can be efficiently dissipated from 663.

As shown in FIGS. 101 and 103, the pressing member 67 is arranged on the upper surface of the laminated body 600. The pressing member 67 is configured to be elastically deformable at least in the X direction. Further, the pressing member 67 is made of a material having thermal conductivity at least in the X direction. In the present embodiment, the pressing member 67 is a spring, specifically a leaf spring. As shown in FIG. 103, the pressing member 67 is arranged on the upper surface of the transformer 63, and is arranged downward from both ends of the first portion 671 formed elongated in the Z direction and the first portion 671 in the Z direction. It has a pair of second portions 672 extending towards it. The lower end of the second portion 672 is fixed to the DDC bottom wall 661 of the DDC case 66. The first portion 671 is configured to elastically press the laminated body 600 toward the DDC bottom wall 661 side. As a result, the laminated body 600 is sandwiched between the DDC bottom wall 661 of the DDC case 66 and the pressing member 67.

At least a part of the pressing member 67 is arranged so as to overlap the center of gravity line which is a straight line extending in the X direction passing through the center of gravity of the laminated body 600. As a result, the pressing member 67 presses the center of gravity of the laminated body 600 downward. Therefore, the pressing member 67 can easily hold the laminated body 600 in a stable manner. In the present embodiment, a part of the first portion 671 of the pressing member 67 is located on the center of gravity line of the laminated body 600. The first portion 671 of the pressing member 67 is arranged at the center of the upper surface of the transformer 63 in the Y direction.

As shown in FIGS. 101 and 103, heat radiating members 68 are arranged on both sides of the pressing member 67 in the Z direction orthogonal to the X direction. Therefore, it is easy to promote heat transfer from the heat generating portion 6a to the DDC facing wall 663 via the heat radiating member 68. Therefore, it is easy to improve the heat dissipation of the heat generating portion 6a. In the present embodiment, the pressing member 67 is arranged in substantially the entire region other than the region where the pressing member 67 is arranged on the upper surface of the transformer 63 when viewed from the X direction. As shown in FIG. 101, the distance C in the X direction between the DDC facing wall 663 and the heat generating portion 6a is constant in the direction orthogonal to the X direction. As a result, the heat radiating member 68 arranged between the DDC facing wall 663 and the heat generating portion 6a also has a constant distance C in the X direction in the direction orthogonal to the X direction. Therefore, the length of the heat radiating member 68 arranged between the lower surface of the DDC facing wall 663 and the upper surface of the heat generating portion 6a can be made constant in the direction orthogonal to the X direction. Therefore, it is possible to prevent the heat dissipation from the heat generating portion 6a to the DDC facing wall 663 from fluctuating in the direction orthogonal to the X direction.

The heat radiating member 68 is configured to be elastically deformable at least in the X direction. Further, the heat radiating member 68 is made of a material having thermal conductivity at least in the X direction. In the present embodiment, the heat radiating member 68 is made of silicon rubber. The heat radiating member 68 is elastically compressed between the DDC facing wall 663 and the laminated body 600. As a result, the heat radiating member 68 is in close contact with the DDC facing wall 663 and the laminated body 600.

In this embodiment, the heat radiating member 68 slightly presses the heat generating portion 6a toward the DDC bottom wall 661 side. The pressing member 67 presses the heat generating portion 6a toward the DDC bottom wall 661 side with a stronger force than the heat radiating member 68. Further, the pressing member 67 may or may not be in contact with the DDC facing wall 663, but when the pressing member 67 is in contact with the DDC facing wall 663, the heat of the heat generating portion 6a is transferred through the pressing member 67. Is also transmitted to the DDC facing wall 663. However, in the present embodiment, the pressing member 67 is a spring, and it is difficult to obtain a contact area between the pressing member 67 and the DDC facing wall 663 and the heat generating portion 6a. Therefore, in the present embodiment, the heat radiating member 68 that contacts both the heat generating portion 6a and the DDC facing wall 663 is arranged in at least a part of the region that does not overlap with the pressing member 67 when viewed from the X direction. In the heat radiating member 68, the heat radiating property from the heat generating portion 6a to the DDC facing wall 663 is improved.

The holding structure of the DC-DC converter 6 is not limited to that shown above. This will be described below.

<Holding structure of DC-DC converter 6 (Part 2)>
As shown in FIGS. 105 and 106, a heat transfer member 69 having thermal conductivity may be arranged between the parts adjacent to each other in the X direction in the laminated body 600. The heat transfer member 69 is in thermal contact with the DDC case 66.

The heat transfer member 69 has a plate shape and is arranged in a posture in which the thickness direction thereof is the X direction. As shown in FIG. 105, the lower surface of the heat transfer member 69 is in surface contact with the upper surface of the primary semiconductor component 61, and the upper surface of the heat transfer member 69 is in surface contact with the lower surface of the transformer 63. In this configuration, the heat transfer member 69 is made of copper.

As shown in FIG. 106, the laminated body 600 is arranged so as to be located inside the heat transfer member 69 when viewed from the X direction. The edge of the heat transfer member 69 is in thermal contact with the DDC side wall 662. Although not shown, the heat transfer member 69 is fixed to the DDC side wall 662.

In this configuration, the heat of the heat generating portion 6a can be dissipated to the DDC case 66 via the heat transfer member 69. Therefore, the heat dissipation path from the heat generating portion 6a to the DDC case 66 can be increased, and the heat dissipation of the heat generating portion 6a can be improved.

Further, the heat transfer member 69 can shield the electromagnetic noise radiated from one component constituting the laminated body 600 toward the other components constituting the laminated body 600.

<Holding structure of DC-DC converter 6 (3)>
As shown in FIGS. 107 and 108, two laminated bodies 600 may be arranged in the DDC case 66.

As shown in FIG. 107, the second laminated body 602 is formed by laminating a secondary semiconductor component 62 and a choke coil 64 arranged on the upper side thereof. Also in the second laminated body 602, the secondary side semiconductor component 62 is arranged on the most DDC bottom wall 661 side of the laminated body 600. The lower surface of the secondary semiconductor component 62 is in surface contact with the upper surface of the DDC bottom wall 661 of the DDC case 66.

A pressing member 67 and a heat radiating member 68 are arranged on the upper surfaces of the first laminated body 601 and the second laminated body 602.

<Holding structure of DC-DC converter 6 (4)>
As shown in FIG. 109, the surfaces on the DDC facing wall 663 side of each laminated body 600 may be arranged at a plurality of positions in the X direction while the basic configuration is the same as that of the configuration 3. The DDC facing wall 663 has a facing protruding portion 663a that protrudes toward the DDC bottom wall 661 side so that the distance C in the X direction between the DDC facing wall 663 and the heat generating portion 6a is constant.

In this configuration, the length of the first laminated body 601 in the X direction and the length of the second laminated body 602 in the X direction are different. In this configuration, the length of the second laminated body 602 in the X direction is smaller than the length of the first laminated body 601 in the X direction. Along with this, the position of the upper surface of the second laminated body 602 is lower than the position of the upper surface of the first laminated body 601.

The facing protrusion 663a is formed in a region of the DDC facing wall 663 facing the second laminated body 602 in the X direction. The facing protrusion 663a makes the length in the X direction between the facing protrusion 663a and the second laminated body 602 substantially the same as the length in the X direction between the DDC facing wall 663 and the first laminated body 601. Is formed. As a result, the distance C in the X direction between the DDC facing wall 663 and the heat generating portion 6a is constant in the direction orthogonal to the X direction. Along with this, the heat radiating member 68 arranged on the upper surface of the first laminated body 601 and the heat radiating member 68 arranged on the upper surface of the second laminated body 602 have substantially the same length in the X direction.

In this configuration, even if the dimensions of the plurality of laminated bodies 600 in the X direction are different, the dimensions of the heat radiating member 68 in the X direction can be made constant in the direction orthogonal to the X direction. Therefore, even if the dimensions of the plurality of laminated bodies 600 in the X direction are different, it is easy to dissipate heat uniformly.

<Holding structure of DC-DC converter 6 (others)>
The holding structure of the DC-DC converter 6 is not limited to each of the above configurations, and can be applied to various configurations without departing from the gist thereof. For example, in each of the above configurations, the case is made of metal, but a resin having thermal conductivity can also be used. Further, although the configuration in which the heat transfer member is in thermal contact with the side wall of the case is shown, the heat transfer member may be in thermal contact with the bottom wall or the facing wall. Further, although the heat generating portion is composed of two or more parts, it may be composed of one part. Further, although the laminated body shows a form in which two parts are laminated in the X direction, three or more parts may be laminated in the X direction.

The present invention is not limited to the above embodiments, and can be applied to various embodiments without departing from the gist thereof.
The dimensions, distances, etc. of the drawings for explaining the present embodiment are not accurate in scale and therefore the absolute measurement values are not accurate, but they are relative measures such as the dimensional ratio and the distance ratio with other parts. The numbers are drawn to be accurate.

1 Power converter 10 Laminated body 2 Semiconductor module 3 Cooling pipe 31 Cooling plate 4 Reactor (electronic parts)
5 Bus Baassie 6 DC-DC converter (electronic component)
70 Capacitor module 8 Current sensor

Claims (4)

A laminate (10) in which a plurality of semiconductor modules (2) incorporating a semiconductor element (20) and a plurality of cooling pipes (3) through which a refrigerant for cooling the semiconductor module flows are laminated.
Electronic components (4, 6) electrically connected to the semiconductor module
A cooling plate for cooling the electronic component (31),
A case (11) for accommodating the laminated body is provided.
The laminate, the electronic components, and the cooling plate are arranged in the stacking direction of the laminate.
The cooling plate is connected to the cooling pipe, and an in-plate flow path (310) through which the refrigerant flows in a direction orthogonal to the stacking direction is formed in the cooling plate.
The cooling plate, the area when viewed from the stacking direction much larger than the above cooling tube,
A power conversion device (1) in which a through hole (111a) penetrating in the stacking direction is formed in the case, and the through hole is closed by the cooling plate . A first electronic component (4) and the second electronic component (6), with two of the electronic components, the cooling plate is interposed between said two electronic components, according to claim 1 Power converter. A laminate (10) in which a plurality of semiconductor modules (2) incorporating a semiconductor element (20) and a plurality of cooling pipes (3) through which a refrigerant for cooling the semiconductor module flows are laminated.
Two electronic components (4, 6), a first electronic component (4) and a second electronic component (6) , electrically connected to the semiconductor module, and
A cooling plate (31) for cooling the electronic component is provided.
The laminate, the electronic components, and the cooling plate are arranged in the stacking direction of the laminate.
The cooling plate is connected to the cooling pipe, and an in-plate flow path (310) through which the refrigerant flows in a direction orthogonal to the stacking direction is formed in the cooling plate.
The cooling plate, the area when viewed from the stacking direction much larger than the above cooling tube,
A power conversion device (1) in which the cooling plate is interposed between the two electronic components . The power according to any one of claims 1 to 3, wherein the area (S1) of the electronic component facing the cooling plate is larger than the area (S2) of the semiconductor module facing the cooling pipe. Conversion device.

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