JP7083654B2 - How to detect the planned split line - Google Patents

Description

The present invention relates to a method for detecting a planned division line.

When a semiconductor device having a plurality of device chips sealed in resin is divided into device chips, the outer peripheral portion of the semiconductor device is removed and embedded in the groove of the planned division line in order to recognize the planned division line. A method of exposing the resin is known (for example, Patent Document 1).

Japanese Unexamined Patent Publication No. 2017-117990

However, the method of Patent Document 1 has a problem that by processing the outer peripheral portion of the semiconductor device, cutting chips associated with the processing of the outer peripheral portion may adhere to the device chip.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a method for detecting a planned division line that reduces the possibility that cutting chips due to machining adhere to the device chip. ..

In order to solve the above-mentioned problems and achieve the object, the method for detecting a planned division line of the present invention is to separate a semiconductor device having a plurality of device chips sealed in a resin into individual device chips. This is a detection method for detecting a planned division line, in which a holding step of holding the semiconductor device on a holding table and the semiconductor device held on the holding table and an ultrasonic irradiation means are horizontally arranged at predetermined intervals. The semiconductor device is provided with an ultrasonic measurement step of irradiating a predetermined thickness portion of the semiconductor device with ultrasonic waves to measure the reflected echo while relatively moving the semiconductor device, and a detection step of detecting the planned division line from the distribution of the reflected echo. Before performing the ultrasonic measurement step, the semiconductor device and the ultrasonic irradiation means are relatively moved in the thickness direction of the semiconductor device at predetermined intervals, and the inside of the semiconductor device is irradiated with ultrasonic waves to generate a preparatory reflection echo. It is characterized by comprising a preparatory ultrasonic measurement step for measurement and a preparatory detection step for determining a position to irradiate ultrasonic waves in the ultrasonic measurement step from the distribution of the preparatory reflection echo in the thickness direction of the semiconductor device. And.

The detection step may further include an image processing step of converting the reflected echo into image data having color information, and may detect the division scheduled line according to the color information of the image data.

The preparation detection step further includes a preparation image processing step for converting the preparation reflection echo into preparation image data having color information, and irradiates ultrasonic waves in the ultrasonic measurement step according to the color information of the preparation image data. You may decide the position to do.

The method for detecting the planned division line of the present invention has an effect that the possibility that cutting chips due to machining adhere to the device chip can be reduced.

FIG. 1 is a surface view showing an example of a semiconductor device targeted by the method for detecting a planned division line according to the first embodiment. FIG. 2 is a sectional view taken along line II-II of the semiconductor device of FIG. FIG. 3 is a perspective view showing a configuration example of a cutting device including a device for detecting a scheduled line to be divided used in the method for detecting a scheduled line to be divided according to the first embodiment. FIG. 4 is a sectional view taken along line IV-IV of the ultrasonic inspection unit included in the cutting apparatus of FIG. FIG. 5 is a flowchart of a method for detecting a planned division line according to the first embodiment. FIG. 6 is an explanatory diagram illustrating the ultrasonic measurement step of FIG. FIG. 7 is an explanatory diagram showing an example of the reflected echo measured in the ultrasonic measurement step of FIG. FIG. 8 is an explanatory diagram showing another example of the reflected echo measured in the ultrasonic measurement step of FIG. FIG. 9 is an explanatory diagram showing an example of image data obtained in the image processing step of FIG. FIG. 10 is a flowchart of a method for detecting a planned division line according to the second embodiment. FIG. 11 is an explanatory diagram illustrating the preparatory ultrasonic measurement step of FIG. FIG. 12 is an explanatory diagram showing an example of the preparatory reflection echo measured in the preparatory ultrasonic measurement step of FIG. FIG. 13 is an explanatory diagram showing another example of the preparatory reflection echo measured in the preparatory ultrasonic measurement step of FIG. FIG. 14 is an explanatory diagram showing an example of the prepared image data obtained in the prepared image processing step of FIG. FIG. 15 is an explanatory diagram showing another example of the prepared image data obtained in the prepared image processing step of FIG. FIG. 16 is a schematic configuration diagram showing a configuration example of a device for detecting a scheduled division line used in the method for detecting a scheduled division line according to the third embodiment. FIG. 17 is a flowchart of an example of a method for detecting a planned division line according to the third embodiment. FIG. 18 is a flowchart of another example of the method for detecting the scheduled division line according to the third embodiment. FIG. 19 is a surface view showing an example of a semiconductor device targeted by the method for detecting a planned division line according to the first modification of the first embodiment to the third embodiment. FIG. 20 is a cross-sectional view taken along the line XX-XX in the semiconductor device of FIG. FIG. 21 is an explanatory diagram showing an example of image data obtained in the image processing step of the method for detecting a scheduled division line according to the first modification of the first embodiment to the third embodiment. FIG. 22 is a surface view showing an example of a semiconductor device that is the target of the method for detecting a planned division line according to the second embodiment of the first to third embodiments. FIG. 23 is a cross-sectional view taken along the line XXIII-XXIII in the semiconductor device of FIG.

An embodiment (embodiment) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited to the contents described in the following embodiments. In addition, the components described below include those that can be easily assumed by those skilled in the art and those that are substantially the same. Furthermore, the configurations described below can be combined as appropriate. In addition, various omissions, substitutions or changes of the configuration can be made without departing from the gist of the present invention.

[Embodiment 1]
The method of detecting the planned division line according to the first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a surface view showing an example of a semiconductor device 1 that is the target of the method for detecting a planned division line according to the first embodiment. FIG. 2 is a sectional view taken along line II-II of the semiconductor device 1 of FIG.

The method for detecting the planned division line according to the first embodiment is a method for separating the semiconductor devices 1 shown in FIGS. 1 and 2 into individual device chips 3. As shown in FIGS. 1 and 2, the semiconductor device 1 has a wafer shape, that is, a circular plate shape, and has a plurality of device chips 3, a resin 4, a planned division line 5, an outer peripheral surplus region 6, and the like. It has a wiring layer 8 and a solder ball 9.

In the semiconductor device 1, as shown in FIG. 1, the plurality of device chips 3 have a square shape and are two-dimensionally arranged along each direction orthogonal to each other. The device chip 3 is a highly integrated semiconductor, and is manufactured by dividing a semiconductor wafer or an optical device wafer whose base material is silicon, sapphire, gallium, etc., and constitutes various memories or LSIs (Large Scale Integration). Is. The device chip 3 is arranged on the rewiring layer 8 and sealed with the resin 4.

In the semiconductor device 1, as shown in FIGS. 1 and 2, the resin 4 covers and seals a plurality of device chips 3, a planned division line 5, and an outer peripheral surplus region 6 from the surface, respectively. As the resin 4, it is preferable to use an epoxy resin which is a thermosetting liquid resin. In this case, the resin 4 is provided so as to cover the surface of the semiconductor device 1, and after being embedded in the planned division line 5, the temperature is 150 ° C. It is hardened by heating to a certain degree.

In the semiconductor device 1, as shown in FIGS. 1 and 2, the planned division line 5 is provided between two adjacent device chips 3, is partitioned for each device chip 3, and is individually fragmented for each device chip 3. It is a groove that is scheduled to be divided when it is converted. Resin 4 is embedded in the planned division line 5.

In the semiconductor device 1, the outer peripheral surplus region 6 is a region surrounding a device region in which a plurality of device chips 3 are arranged and in which a plurality of device chips 3 are not arranged. The surface of the outer peripheral surplus region 6 is covered with the resin 4 as in the case of the plurality of device chips 3 and the planned division line 5.

As shown in FIG. 2, the rewiring layer 8 is arranged on the back side of the device chip 3, that is, on the side opposite to the side of the device chip 3 covered with the resin 4. The rewiring layer 8 is provided in common to the plurality of device chips 3 and the planned division line 5. The rewiring layer 8 is a layer provided with wiring for electrically connecting the device chip 3 and the printed wiring board on which the device chip 3 is mounted.

As shown in FIG. 2, a plurality of solder balls 9 are uniformly arranged on the back side of the rewiring layer 8, that is, on the side opposite to the side on which the device chip 3 of the rewiring layer 8 is arranged. There is. The solder ball 9 is used to electrically conduct the rewiring layer 8 and the printed wiring board (not shown) after the semiconductor device 1 is divided into device chips 3.

The semiconductor device 1 shown in FIGS. 1 and 2 is manufactured, for example, by dividing a predetermined wafer into device chips 3, arranging the device chips 3 on the rewiring layer 8, and sealing them with the resin 4. Will be done. The semiconductor device 1 is divided into device chips 3 along the scheduled division line 5, and is divided into individual package devices 7 shown in FIGS. 1 and 2. The package device 7 includes a rewiring layer 8 in which the solder balls 9 are arranged, one device chip 3 mounted on the rewiring layer 8, and a resin 4 in which the device chip 3 is sealed. In the first embodiment, the package device 7 is a FOWLP (Fan Out Wafer Level Package), which is a form of a semiconductor component package that can be surface-mounted on a printed circuit board with a small occupied area. The package device 7 which is a FOWLP has a package area larger than the horizontal area of the device chip 3 and can extend the terminal to the outside of the horizontal direction of the device chip 3, so that it is more compared with the horizontal area of the device chip 3. It can also be used in applications with a large number of terminals, and in this respect, it is superior to the WLCSP (Wafer Level Chip Size Package) described later.

Next, an example of the cutting device 10 including the detection device 90 for the scheduled division line used in the method for detecting the scheduled division line according to the first embodiment will be described. FIG. 3 is a perspective view showing a configuration example of a cutting device 10 including a detection device 90 for a scheduled division line used in the method for detecting a scheduled division line according to the first embodiment.

The cutting device 10 divides the semiconductor device 1 into each device chip 3 by cutting the cutting blade 21 into the semiconductor device 1 along the scheduled division line 5, and the semiconductor device 1 is divided into individual package devices 7. It is a device to disintegrate. The cutting device 10 detects the scheduled division line 5 with the image pickup unit 60 for the workpiece whose scheduled division line 5 can be detected by visible light or infrared rays, and performs alignment. The cutting device 10 detects the scheduled division line 5 with the ultrasonic inspection unit 70, which will be described later, for the semiconductor device 1 and performs alignment.

As shown in FIG. 3, the cutting device 10 performs cutting along a holding table 11 that sucks and holds the semiconductor device 1 on the holding surface 12 and a scheduled division line 5 of the semiconductor device 1 held by the holding table 11. The cutting unit 20, the X-axis moving unit 30 that relatively moves the holding table 11 and the cutting unit 20 in the X-axis direction parallel to the horizontal direction, and the holding table 11 and the cutting unit 20 are parallel to the horizontal direction and the X-axis. Z-axis movement that moves the Y-axis movement unit 40 that moves relative to the Y-axis direction that is orthogonal to the direction, and the holding table 11 and the cutting unit 20 in the Z-axis direction that is orthogonal to both the X-axis direction and the Y-axis direction. It includes a unit 50, an imaging unit 60, an ultrasonic inspection unit 70, and a control unit 100.

The holding table 11 has a disk shape in which a portion constituting the holding surface 12 is formed of porous ceramic or the like toward the upper side in the Z-axis direction, and is connected to a vacuum suction source (not shown) via a vacuum suction path (not shown). The semiconductor device 1 placed on the holding surface 12 is sucked and held. Further, the holding table 11 is rotationally moved around the axis parallel to the Z-axis direction by the rotation drive source 13.

The X-axis moving unit 30 is a machining feed means for machining and feeding the holding table 11 in the X-axis direction by moving the holding table 11 together with the rotation drive source 13 in the X-axis direction. The Y-axis moving unit 40 is an indexing feeding means for indexing and feeding the holding table 11 by moving the cutting unit 20 together with the image pickup unit 60 and the ultrasonic inspection unit 70 in the Y-axis direction. The Z-axis moving unit 50 is a cutting feeding means for cutting and feeding the cutting unit 20 by moving the cutting unit 20 together with the image pickup unit 60 and the ultrasonic inspection unit 70 in the Z-axis direction. The X-axis moving unit 30, the Y-axis moving unit 40, and the Z-axis moving unit 50 have well-known ball screws 31, 41, 51 and ball screws 31, 41, 51 rotatably provided around the axis around the axis. It is provided with a well-known pulse motor 32, 42, 52 and a well-known guide rail 33, 43, 53 that movably support the holding table 11 or the cutting unit 20 in the X-axis direction, the Y-axis direction, or the Z-axis direction.

Further, the cutting device 10 detects the position of the holding table 11 in the X direction, the position detection unit 34 in the X direction, and the positions of the cutting unit 20, the imaging unit 60, and the ultrasonic inspection unit 70 in the Y direction. A Y-direction position detection unit 44 and a Z-direction position detection unit 54 for detecting the Z-direction positions of the cutting unit 20, the imaging unit 60, and the ultrasonic inspection unit 70 are provided. The X-direction position detection unit 34 and the Y-direction position detection unit 44 are provided by a linear scale 35, 45 parallel to the X direction or the Y direction, and a read head 36, 46 that moves integrally with the holding table 11 or the cutting unit 20. Can be configured. The Z-direction position detection unit 54 detects the Z-direction position of the cutting unit 20 by the pulse of the pulse motor 52. The X-direction position detection unit 34, the Y-direction position detection unit 44, and the Z-direction position detection unit 54 are positioned in the X-direction of the holding table 11, the cutting unit 20, the imaging unit 60, and the ultrasonic inspection unit 70 in the Y-direction or Z-direction. Is output to the control unit 100.

The cutting unit 20 accommodates a spindle 22 that rotates around an axis parallel to the Y-axis direction, and is moved in the Y-axis direction and the Z-axis direction by the Y-axis moving unit 40 and the Z-axis moving unit 50. The spindle housing 23 and the cutting blade 21 attached to the spindle 22 are provided. The cutting blade 21 is a cutting grind formed in an ultra-thin ring shape, and is held by the holding table 11 by being rotated by the spindle 22 around an axis parallel to the Y-axis direction while being supplied with cutting water. The semiconductor device 1 is machined. The value of the thickness of the cutting blade 21 of the cutting unit 20 is preferably equal to or less than the width of the planned division line 5 of the semiconductor device 1.

The image pickup unit 60 captures an image of the workpiece held on the holding table 11, and in the first embodiment, an embodiment in which the image pickup unit 60 is arranged at a position parallel to the cutting unit 20 in the X-axis direction is exemplified. , The present invention is not limited to this. The image pickup unit 60 is attached to the spindle housing 23. The image pickup unit 60 is composed of a CCD camera that takes an image of the workpiece held on the holding table 11.

The ultrasonic inspection unit 70 inspects the semiconductor device 1 held on the holding table 11 by ultrasonic waves, and is arranged at a position parallel to the cutting unit 20 and the image pickup unit 60 in the X-axis direction. In the first embodiment, specifically, the ultrasonic inspection unit 70 is attached to the side of the imaging unit 60 opposite to the side where the cutting unit 20 is located.

FIG. 4 is a sectional view taken along line IV-IV of the ultrasonic inspection unit 70 included in the cutting apparatus 10 of FIG. As shown in FIG. 4, the ultrasonic inspection unit 70 includes an ultrasonic probe 71 and a holder 72. As shown in FIG. 3, the ultrasonic probe 71 is electrically connected to the control unit 100 so as to be capable of information communication.

The ultrasonic probe 71 has a cylindrical shape having a diameter of 6 mm or more and 10 mm or less, and its axial direction is arranged parallel to the Z-axis direction. The ultrasonic probe 71 is electrically connected to the control unit 100 so as to be capable of information communication, and irradiates ultrasonic waves downward in the Z-axis direction according to the operation of the ultrasonic measuring unit 110 of the control unit 100. It can operate as an ultrasonic wave irradiation means for ultrasonic waves, or as an ultrasonic wave detection means for receiving and detecting ultrasonic waves from the lower side in the Z-axis direction. The details of the operation of the ultrasonic probe 71 will be described later together with a detailed description of the ultrasonic measuring unit 110.

As shown in FIG. 4, the holder 72 covers the entire circumference of the lower tip portion of the ultrasonic probe 71 in the Z-axis direction in the X-axis direction and the Y-axis direction in the Z-axis direction. It projects downward from the lower tip portion in the Z-axis direction, is fixed to the ultrasonic probe 71, and is installed. As a result, as shown in FIG. 4, the holder 72 forms a space 78 having an opening toward the lower side in the Z-axis direction in the region below the tip portion of the ultrasonic probe 71 in the Z-axis direction. ..

As shown in FIG. 4, the holder 72 has a water supply path 73 for supplying water 79 to the space 78 from the water supply unit 80 provided outside the ultrasonic inspection unit 70. The water supply passage 73 is a through hole that communicates the outer peripheral portion of the holder 72 with the space 78, and the outer peripheral portion side of the holder 72 communicates with the water supply unit 80 via a water channel hose, a water channel pipe, or the like.

The water supply unit 80 is a device that functions as a water supply means for supplying water 79 to the space 78 and the space below the space 78 in the Z-axis direction via the water supply path 73. The water supply unit 80 can switch between a state of supplying water 79 and a state of stopping the supply according to the control of the control unit 100.

The control unit 100 functions as a control means for controlling each of the above-mentioned components of the cutting device 10 to cause the cutting device 10 to perform a machining operation on the semiconductor device 1. The control unit 100 includes an arithmetic processing unit having a microprocessor such as a CPU (Central Processing Unit), a storage device having a memory such as ROM (Read Only Memory) or RAM (Random Access Memory), and an input / output interface device. It is a computer that has and can execute computer programs. The arithmetic processing device of the control unit 100 executes a computer program stored in the ROM on the RAM to generate a control signal for controlling the cutting device 10. The arithmetic processing device of the control unit 100 outputs the generated control signal to each component of the cutting device 10 via the input / output interface device. Further, the control unit 100 is connected to a display unit 130 composed of a liquid crystal display device or the like for displaying a processing operation state, an image, or the like, or an input unit (not shown) used when an operator registers processing content information or the like. There is. The input unit is composed of at least one of a touch panel provided on the display unit 130 and a keyboard and the like.

As shown in FIG. 3, the control unit 100 includes the above-mentioned components of the cutting device 10, for example, the cutting unit 20, the X-axis moving unit 30, the Y-axis moving unit 40, the Z-axis moving unit 50, and the imaging unit 60. It is electrically connected to the ultrasonic inspection unit 70, the water supply unit 80, and the display unit 130 so that information and communication can be performed, and controls each part.

The control unit 100 is located in the X-direction, Y-direction, and Z-direction positions of the cutting unit 20, the imaging unit 60, and the ultrasonic inspection unit 70 from the X-direction position detection unit 34, the Y-direction position detection unit 44, and the Z-direction position detection unit 54. By acquiring information and controlling the X-axis moving unit 30, the Y-axis moving unit 40, and the Z-axis moving unit 50, the positions of the cutting unit 20, the imaging unit 60, and the ultrasonic inspection unit 70 are controlled. As a result, the control unit 100 scans and moves the ultrasonic probe 71 along the upper surface of the semiconductor device 1 to be detected in the Z-axis direction. The control unit 100 scans and moves the ultrasonic probe 71 along each measurement point arranged in the X-axis direction and the Y-axis direction at predetermined intervals, for example. It should be noted that this predetermined interval is a measurement pitch, and is exemplified to be about several 100 μm to 1.0 mm, but is not limited to this, and may be appropriately changed depending on the dimensions and the like of the semiconductor device 1 to be detected. It is possible.

The control unit 100 controls the cutting operation of the cutting unit 20, the imaging operation of the imaging unit 60, and the water supply operation of the water supply unit 80. All of these functions of the control unit 100 are realized by the arithmetic processing device of the control unit 100 executing a computer program stored in the storage device.

As shown in FIG. 3, the control unit 100 includes an ultrasonic measurement unit 110 and an image processing unit 120. Both the function of the ultrasonic measurement unit 110 and the function of the image processing unit 120 are realized by the arithmetic processing device of the control unit 100 executing a computer program stored in the storage device.

The ultrasonic measuring unit 110 is a device that functions as an ultrasonic measuring means for performing ultrasonic measurement using the ultrasonic probe 71, and as shown in FIG. 3, the ultrasonic pulser 111, the ultrasonic receiver 112, and the ultrasonic receiver 112. It is provided with an ultrasonic detector 113.

The ultrasonic pulser 111 applies a pulsed voltage to the ultrasonic probe 71 to irradiate the ultrasonic probe 71 with ultrasonic waves. The ultrasonic waves emitted by the ultrasonic probe 71 are reflected by the surface of the resin 4 of the semiconductor device 1 to be detected and the interface between the resin 4 and the device chip 3 to become reflected waves, and become the ultrasonic probe 71. Come back to. The ultrasonic probe 71 detects this reflected wave, converts it into a voltage signal, and transmits it to the ultrasonic receiver 112.

The ultrasonic receiver 112 amplifies the voltage signal input from the ultrasonic probe 71 and transmits it to the ultrasonic detector 113. The ultrasonic detector 113 is set with a gate for designating the time of the reflected echo to be detected, and measures the strength of the voltage signal in the gate. In the method for detecting the planned division line according to the first embodiment, the ultrasonic detector 113 sets, for example, a gate for detecting the voltage signal of the reflected wave reflected from the interface between the resin 4 of the semiconductor device 1 and the device chip 3. is doing. The ultrasonic detector 113 acquires information on the intensity of the voltage signal in the gate as measurement data.

The voltage signal of the reflected wave amplified by the ultrasonic receiver 112 is associated with information on the time between the irradiation of the ultrasonic probe 71 with the ultrasonic wave and the return of the ultrasonic probe 71. In the present specification, the voltage signal of the reflected wave and the time information associated with the voltage signal of the reflected wave constitute the reflected echo acquired by the ultrasonic receiver 112. This reflected echo is represented by a unit of time of μs and a unit of voltage signal intensity of V, respectively, and can be represented as a waveform by a graph or the like with time on the horizontal axis and intensity on the vertical axis. Here, since the time is the propagation time of the ultrasonic wave, the position in the thickness direction of the reflected wave can be obtained by using the propagation speed of the ultrasonic wave for the information of this time. Therefore, the ultrasonic detector 113 can set a gate for designating the time of the voltage signal to be detected.

The image processing unit 120 acquires image data based on the measurement data acquired by the ultrasonic detector 113 and the detection results of the X-direction position detection unit 34, the Y-direction position detection unit 44, and the Z-direction position detection unit 54. .. That is, the image processing unit 120 associates this measurement data with the positions in the X-axis direction and the Y-axis direction of the semiconductor device 1 based on the detection results of the X-direction position detection unit 34 and the Y-direction position detection unit 44, and colors them. Convert to image data with information. Specifically, the image processing unit 120 determines the strength of the voltage signal included in the measurement data for each measurement point of the measurement data obtained based on the detection results of the X-direction position detection unit 34 and the Y-direction position detection unit 44. Correspondingly, by converting the measurement data into preset color information, image data as an aggregate of color information corresponding to the voltage signal at each measurement point is created. The image processing unit 120, for example, converts this measurement data into image data having RGB information of a plurality of tones (for example, 256 tones). Alternatively, the image processing unit 120 may convert this measurement data into black-and-white image data having brightness information of a plurality of tones (for example, 256 tones). The color information included in the image data created by the image processing unit 120 is used when the control unit 100 executes a process of detecting the scheduled division line 5.

The control unit 100 detects the scheduled division line 5 based on the image data acquired by the image processing unit 120. The control unit 100 can transmit and display the image data acquired from the image processing unit 120 to the display unit 130. The control unit 100 superimposes the information of the scheduled division line 5 detected based on the image data (for example, the position at the center in the width direction of the scheduled division line 5) on the image data, and transmits the information to the display unit 130 for display. be able to.

The display unit 130 acquires the image data created by the image processing unit 120 from the control unit 100 and displays it. The display unit 130 can acquire the information of the scheduled division line 5 detected and acquired by the control unit 100 from the control unit 100 and display it on the image data. The display unit 130 is exemplified by a liquid crystal display device, and may be a touch panel having a function as an input device.

The above-mentioned holding table 11 of the cutting apparatus 10 shown in FIG. 3, the ultrasonic inspection unit 70, and the X-axis moving unit 30, Y that moves the ultrasonic inspection unit 70 along the X, Y, and Z directions. The axis moving unit 40, the Z-axis moving unit 50, the water supply unit 80, and the control unit 100 are the detection of the scheduled division line for detecting the scheduled division line 5 used in the method for detecting the scheduled division line according to the first embodiment. It constitutes the device 90. Further, the ultrasonic inspection unit 70 and the ultrasonic measuring unit 110 are the semiconductor device 1 while the semiconductor device 1 held on the holding table 11 and the ultrasonic probe 71 are relatively moved in the horizontal direction at predetermined intervals. It constitutes an ultrasonic measuring means for irradiating a predetermined thickness portion with ultrasonic waves and measuring reflected echoes 150-1, 150-2, 150-3 (see FIGS. 7 and 8).

Next, a method for detecting a planned division line according to the first embodiment will be described. The method for detecting the scheduled division line according to the first embodiment is the operation of the detection device 90 for the scheduled division line. In the first embodiment, the cutting device 10 divides the semiconductor device 1 into individual pieces for each device chip 3. This is a method of detecting a scheduled line 5 and dividing the semiconductor device 1 into individual package devices 7 along the scheduled division line 5 detected by the cutting device 10. FIG. 5 is a flowchart of a method for detecting a planned division line according to the first embodiment.

The method for detecting the scheduled division line according to the first embodiment is a detection method for detecting the scheduled division line 5 using the detection device 90 for the scheduled division line shown in FIG. 3, and as shown in FIG. 5, the holding step ST1 And an ultrasonic measurement step ST2 and a detection step ST3. The detection step ST3 includes an image processing step ST4. The method for detecting the scheduled division line according to the first embodiment further includes an alignment step ST5 and a cutting step ST6.

The holding step ST1 is a step of holding the semiconductor device 1 to be detected in the holding table 11. In the holding step ST1, first, in detail, first, the lower end portion of the holder 72 in the Z-axis direction is sufficiently separated from the holding surface 12 of the holding table 11 on which the semiconductor device 1 to be detected is placed. In this state, the semiconductor device 1 to be detected is transported from the storage portion of the semiconductor device 1 (not shown) by using a transport device (not shown), and is placed on the holding surface 12 of the holding table 11. In the holding step ST1, the vacuum suction source then performs a suction operation to suck and hold the semiconductor device 1 to be detected on the holding surface 12 of the holding table 11. By executing the holding step ST1 in this way, the semiconductor device 1 to be detected does not move on the holding surface 12 of the holding table 11 in any of the X-axis direction, the Y-axis direction, and the Z-axis direction. Is held in.

The ultrasonic waves emitted by the ultrasonic probe 71 have low propagation efficiency in the air. Therefore, the reflected echo cannot be measured in a state where air is present between the lower tip portion of the ultrasonic probe 71 in the Z-axis direction and the semiconductor device 1 to be detected. Therefore, when measuring the reflected echo, as shown in FIG. 4, the region between the lower tip portion of the ultrasonic probe 71 in the Z-axis direction and the semiconductor device 1 to be detected is filled with water 79. It is necessary to form a state.

Therefore, in the method of detecting the scheduled division line, the cutting apparatus 10 carries out a water supply step, which is a step of making the reflected echo in a measurable state, before carrying out the ultrasonic measurement step ST2. In the water supply step, in detail, first, the control unit 100 controls the Z-axis moving unit 50 to move the ultrasonic probe 71 downward in the Z-axis direction, thereby moving the holder 72 in the Z-axis direction. As shown in FIG. 4, the lower end portion is brought close to a predetermined distance d with respect to the upper surface of the semiconductor device 1 to be detected in the Z-axis direction. Here, the predetermined distance d is the position in the Z-axis direction of the ultrasonic probe 71 in which the focal point of the ultrasonic wave irradiated by the ultrasonic probe 71 is set on or near the interface between the resin 4 and the device chip 3. It is a parameter to be represented, and specifically, it is about several mm.

In the water supply step, the control unit 100 then controls the water supply operation of the water supply unit 80, so that the water supply unit 80 passes through the water supply path 73 and is in the Z-axis direction with respect to the space 78 and the space 78. Water 79 is supplied to the lower space. By executing the water supply step in this way, as shown in FIG. 4, the region between the lower tip portion of the ultrasonic probe 71 in the Z-axis direction and the semiconductor device 1 to be detected is water 79. The state filled with can be formed, and the reflected echo can be made measurable.

The control unit 100 controls the water supply operation of the water supply unit 80 until the subsequent ultrasonic measurement step ST2 is completed. Until the subsequent ultrasonic measurement step ST2 is completed, the water supply unit 80 continues to supply water 79 to the space 78 and the space below the space 78 in the Z-axis direction via the water supply path 73. Therefore, the reflected echo is maintained in a measurable state.

The ultrasonic probe 71 is positioned in the water supply step at a position where the lower end of the holder 72 is brought closer to the upper surface of the semiconductor device 1 by a predetermined distance d. Specifically, the predetermined distance d means that the ultrasonic probe 71 transmits and receives ultrasonic waves in the water supply step, and the intensity of the reflected echo from the interface between the resin 4 and the device chip 3 is maximized. The axial position is preferred.

Since the semiconductor device 1 to be detected constitutes the package device 7 which is the FOWLP described above, the device chip 3 is arranged near the center of the semiconductor device 1 to be detected in the Z-axis direction. Therefore, the position of the boundary surface between the resin 4 and the device chip 3 in the Z-axis direction can be roughly calculated when the thickness of the device chip 3 in the Z-axis direction is known. Therefore, when the thickness of the device chip 3 in the Z-axis direction is known, the predetermined distance d described above can be calculated from the preset distance between the ultrasonic probe 71 and the focal point of the ultrasonic wave. For this purpose, the cutting device 10 irradiates the ultrasonic probe 71 by bringing the lower end of the holder 72 closer to the upper surface of the semiconductor device 1 to a predetermined distance d at the stage of the water supply step. The ultrasonic probe 71 can be moved to a position where the focal point of the ultrasonic wave is set on or near the interface between the resin 4 and the device chip 3. By doing so, the cutting device 10 is in a state where the reflected wave from the boundary surface between the resin 4 of the semiconductor device 1 and the device chip 3 can be reliably detected and measured accurately. Can be done.

In the ultrasonic measurement step ST2, the semiconductor device 1 to be detected held on the holding table 11 and the ultrasonic probe 71 functioning as an ultrasonic irradiation means are relatively moved in the horizontal direction at predetermined intervals while being detected. This is a step of irradiating a predetermined thickness portion of a certain semiconductor device 1 with ultrasonic waves and measuring the reflected echoes 150-1, 150-2, 150-3 shown in FIGS. 7 and 8 as examples. Here, the predetermined thickness portion indicates the boundary surface between the resin 4 of the semiconductor device 1 and the device chip 3 and the vicinity of the boundary surface. Further, irradiating a predetermined thickness portion of the semiconductor device 1 with ultrasonic waves means that the focal point of the ultrasonic waves irradiated by the ultrasonic probe 71 is set on the interface between the resin 4 and the device chip 3 or near the interface. Is shown. In the first embodiment, before the ultrasonic measurement step ST2 is executed, the ultrasonic probe 71 is capable of irradiating the predetermined thickness portion with ultrasonic waves at the stage where the water supply step is being executed. The position in the Z-axis direction is adjusted to the position defined by the predetermined distance d.

FIG. 6 is an explanatory diagram illustrating the ultrasonic measurement step ST2 of FIG. FIG. 7 is an explanatory diagram showing an example of the reflected echo measured in the ultrasonic measurement step ST2 of FIG. FIG. 8 is an explanatory diagram showing another example of the reflected echo measured in the ultrasonic measurement step ST2 of FIG. Note that FIG. 6 shows the ultrasonic probe 71 and the semiconductor device 1 to be detected, and the illustration of each other component of the detection device 90 of the planned division line is omitted.

Hereinafter, in the ultrasonic measurement step ST2, as shown in FIG. 6, the cutting device 10 divides the ultrasonic probe 71 into a position 71-1 on the scheduled division line 5 and a position 71- on the device chip 3. The case where the semiconductor device 1 is moved relative to the semiconductor device 1 in this order to the position 71-3 on the second and another scheduled division line 5 will be described with reference to FIGS. 7 and 8 in addition to FIG.

The reflected echo 150-1 shown in FIG. 7 is an ultrasonic receiver 112 of the ultrasonic measuring unit 110 when the ultrasonic probe 71 located at the position 71-1 shown in FIG. 6 irradiates the ultrasonic 140-1. Is obtained by. The reflected echo 150-3 shown in FIG. 7 is acquired by the ultrasonic receiver 112 of the ultrasonic measuring unit 110 when the ultrasonic probe 71 located at the position 71-3 shown in FIG. 6 irradiates the ultrasonic 140-3. Is to be done. The reflected echoes 150-1 and 150-3 have waveforms similar to each other.

As shown in FIG. 7, the reflected echoes 150-1 and 150-3 include a surface wave voltage signal 151 which is a reflected wave reflected on the surface of the resin 4 of the semiconductor device 1 to be detected and a semiconductor to be detected. It has a back surface of the device 1, that is, a voltage signal 152 of a back surface wave which is a reflected wave reflected at the boundary surface between the back surface of the rewiring layer 8 and the water 79. Since the reflected echoes 150-1 and 150-3 are all acquired at the positions 71-1 and 71-3 on the scheduled division line 5, they are reflected at the boundary surface between the resin 4 and the device chip 3. It does not have a reflected wave voltage signal.

Further, the reflected echo 150-2 shown in FIG. 8 is an ultrasonic receiver 112 of the ultrasonic measuring unit 110 when the ultrasonic probe 71 located at the position 71-2 shown in FIG. 6 irradiates the ultrasonic 140-2. Is obtained by.

As shown in FIG. 8, the reflected echo 150-2 includes the resin 4 in addition to the surface wave voltage signal 151 and the back surface wave voltage signal 152 similar to those of the reflected echoes 150-1 and 150-3. It has a voltage signal 153 of a surface wave which is a reflected wave reflected at the interface with the device chip 3. Since the reflected echo 150-2 is acquired at the position 71-2 on the device chip 3, it has the voltage signal 153 of the surface wave in this way.

In the ultrasonic measurement step ST2, as described above, the ultrasonic pulser 111 and the ultrasonic receiver 112 of the ultrasonic measuring unit 110 perform ultrasonic measurement using the ultrasonic probe 71, thereby locating the position on the device chip 3. The reflected echo 150-2 having the interface wave voltage signal 153 is acquired at 71-2, and the reflected echo 150- has no interface wave voltage signal 153 at the positions 71-1 and 71-3 on the scheduled division line 5. Acquire 1,150-3.

In the ultrasonic measurement step ST2, the control unit 100 controls the X-axis moving unit 30 and the Y-axis moving unit 40 along each measurement point arranged in the X-axis direction and the Y-axis direction at predetermined intervals. By scanning and moving the ultrasonic probe 71, reflected echoes 150-1, 150-2, 150-3 are acquired at all measurement points. Further, in the first embodiment, in the ultrasonic measurement step ST2, all the reflected echoes 150-acquired while the semiconductor device 1 held on the holding table 11 and the ultrasonic probe 71 are relatively moved in the horizontal direction at predetermined intervals. The control unit 100 temporarily stores 1,150-2,150-3. That is, in the first embodiment, the control unit 100 temporarily stores the same number of reflected echoes 150-1, 150-2, 150-3 as the measurement points.

The detection step ST3 is executed after the ultrasonic measurement step ST2, and is a step of detecting the scheduled division line 5 from the distribution of reflected echoes. In the detection step ST3, in detail, first, the ultrasonic detector 113 of the ultrasonic measuring unit 110 is transferred to the reflected echoes 150-1, 150-2, 150-3 acquired by the ultrasonic receiver 112 of the ultrasonic measuring unit 110. On the other hand, the strength of the voltage signal in the gate set in a predetermined range including the time when the voltage signal 153 of the interface wave is detected is measured. In the detection step ST3, the voltage signal measured by the ultrasonic detector 113 of the ultrasonic measuring unit 110 becomes a positive value clearly larger than 0 at the position 71-2 on the device chip 3, and the position 71 on the scheduled division line 5. -1,71-3 is 0 or a value near 0. In the detection step ST3, information on the intensity of the voltage signal 153 of the interface wave in the gate is acquired as measurement data.

In the detection step ST3, the control unit 100 sets all the measurement points to the voltage signal of the interface wave based on the information of the intensity of the voltage signal 153 of the interface wave acquired as the measurement data by the ultrasonic detector 113 of the ultrasonic measuring unit 110. It is classified into a measurement point in which the intensity of 153 is equal to or higher than a predetermined threshold and a measurement point in which the intensity of the voltage signal 153 of the interface wave is less than the predetermined threshold. In the detection step ST3, the control unit 100 makes all the measurement points a positive value in which the information on the intensity of the voltage signal 153 of the interface wave is clearly larger than 0, and the voltage signal of the interface wave. It can be classified into measurement points where the intensity information of 153 is 0 or a value near 0.

In the detection step ST3, the control unit 100 subsequently determines that the measurement point at which the intensity of the voltage signal 153 of the interface wave is equal to or higher than a predetermined threshold value is the measurement point on the device chip 3, and the voltage signal of the interface wave is signaled. A measurement point whose intensity of 153 is less than a predetermined threshold is determined to be a measurement point that is not on the device chip 3. In the detection step ST3, after that, the control unit 100 sets the measurement points on the scheduled division line 5 among the measurement points not on the device chip 3 except for the measurement points not on the outer peripheral surplus region 6. Is determined. In the detection step ST3, the scheduled division line 5 can be detected from the distribution of the voltage signals 151, 152, 153 of each wave of the reflected echo 150-1, 150-2, 150-3 in this way.

The detection step ST3 preferably includes an image processing step ST4. In this case, the image processing step ST4 is a step of converting the distribution of the voltage signals 151, 152, 153 of each wave of the reflected echoes 150-1, 150-2, 150-3 into image data having color information. Further, in this case, the detection step ST3 is a step of detecting the scheduled division line 5 according to the color information of the image data obtained by converting in the image processing step ST4.

When the detection step ST3 includes the image processing step ST4, in the image processing step ST4, in detail, the control unit 100 obtains information on the intensity of the voltage signal 153 of the interface wave acquired by the ultrasonic detector 113 of the ultrasonic measuring unit 110. The first color is a pixel including a measurement point in which the intensity of the voltage signal 153 of the interface wave is equal to or higher than a predetermined threshold, and a pixel including a measurement point in which the intensity of the voltage signal 153 of the interface wave is less than the predetermined threshold is defined as the first color. An image including the first color and the second color is created as two colors. In the image processing step ST4, the control unit 100 uses the pixel including the measurement point whose intensity information of the voltage signal 153 of the interface wave is clearly larger than 0 as a positive value as the first color, and the interface wave. It is possible to create an image in which the pixel including the measurement point whose intensity information of the voltage signal 153 is 0 or a value near 0 is used as the second color.

FIG. 9 is an explanatory diagram showing an example of image data obtained in the image processing step ST4 of FIG. The image data 155 shown in FIG. 9 is obtained by executing the image processing step ST4 for the semiconductor device 1 to be detected, and includes a pixel region 157 of the first color, a pixel region 158 of the second color, and the like. Has.

As shown in FIG. 9, the pixel region 157 of the first color in the image data 155 corresponds to the region in which the device chips 3 are arranged. As shown in FIG. 9, the second color pixel region 158 in the image data 155 corresponds to a region in which the device chips 3 are not arranged, that is, a division scheduled line 5 and an outer peripheral surplus region 6.

When the detection step ST3 includes the image processing step ST4, in the detection step ST3, the control unit 100 first applies the pixel region 157 of the first color to the device chip 3 in the image data obtained by conversion in the image processing step ST4. Is determined to be an area in which the devices chips 3 are arranged, and the pixel area 158 of the second color is determined to be an area in which the device chips 3 are not arranged. When the detection step ST3 includes the image processing step ST4, in the detection step ST3, the region excluding the outer peripheral surplus region 6 among the regions determined by the control unit 100 to be the region where the device chips 3 are not arranged next. Is determined to be the scheduled division line 5. In the detection step ST3, the scheduled division line 5 can be detected from the distribution of the voltage signals 151, 152, 153 of each wave of the reflected echo 150-1, 150-2, 150-3 in this way.

The control unit 100 may transmit the image data created in the image processing step ST4 and the information of the scheduled division line 5 detected in the detection step ST3 to the display unit 130 for display. In this case, it is possible to confirm at a glance how the scheduled division line 5 is detected.

The alignment step ST5 is executed after the detection step ST3, and the control unit 100 uses the information of the scheduled division line 5 detected in the detection step ST3 (for example, the center position in the width direction of the scheduled division line 5) to describe the above. It is a step to carry out the alignment. Specifically, in the alignment step ST5, the control unit 100 executes processing such as pattern matching for aligning the scheduled division line 5 detected in the detection step ST3 with the cutting blade 21 of the cutting unit 20. .. As described above, in the alignment step ST5, since it is detected in the detection step ST3 and executed using the position information of the division scheduled line 5 corresponding to the portion to be cut by the cutting blade 21, it is executed after the alignment step ST5. The accuracy of the cutting position on the cutting blade 21 in the cutting step ST6 can be improved.

The cutting step ST6 is executed after the alignment step ST5, and is a step of cutting the semiconductor device 1 along the scheduled division line 5 with the cutting blade 21. Specifically, in the cutting step ST6, first, the control unit 100 cuts the semiconductor device 1 along the scheduled division line 5 with the cutting blade 21 based on the execution result of the alignment step ST5.

As described above, according to the method for detecting the planned division line according to the first embodiment, the semiconductor device 1 to be detected and the ultrasonic probe 71 functioning as an ultrasonic irradiation means are relatively moved in the horizontal direction at predetermined intervals. While doing so, ultrasonic waves are applied to a predetermined thickness portion of the semiconductor device 1 to be detected, reflected echoes 150-1, 150-2, 150-3 are measured, and the reflected echoes 150-1, 150-2, The scheduled division line 5 is detected from the distribution of the voltage signals 151, 152, 153 of each wave of 150-3. Therefore, in the method for detecting the scheduled division line according to the first embodiment, it is not necessary to perform cutting or the like for detecting the scheduled division line 5, so that the cutting chips associated with the processing adhere to the device chip 3. It is possible to reduce the possibility of the chipping.

Further, in the method for detecting the scheduled division line according to the first embodiment, the voltage signal 153 of the interface wave of the reflected echoes 150-1, 150-2, 150-3 is converted into image data 155 having color information, and this image is obtained. The scheduled division line 5 is detected according to the color information of the data 155. Therefore, it is possible to confirm at a glance how the scheduled division line 5 is detected.

[Embodiment 2]
The method of detecting the planned division line according to the second embodiment of the present invention will be described with reference to the drawings. The method for detecting the scheduled division line according to the second embodiment is the operation of the detection device 90 for the scheduled division line, similarly to the method for detecting the scheduled division line according to the first embodiment. In the description of the method for detecting the planned division line according to the second embodiment, the same parts as those in the first embodiment are designated by the same reference numerals and the description thereof will be omitted.

FIG. 10 is a flowchart of a method for detecting a planned division line according to the second embodiment. As shown in FIG. 10, the method for detecting the scheduled division line according to the second embodiment includes the holding step ST1, the ultrasonic measurement step ST2, and the detection step ST3 provided in the method for detecting the scheduled division line according to the first embodiment. In addition to the alignment step ST5 and the cutting step ST6, before the ultrasonic measurement step ST2 and the detection step ST3 are performed, the preparation ultrasonic measurement step ST7, the preparation detection step ST8, and the surface wave detection determination step ST10 are further performed. And prepare. The preparation detection step ST8 includes a preparation image processing step ST9.

In the water supply step, the ultrasonic probe 71 moves the focal point of the ultrasonic wave to a position set near the center in the Z-axis direction of the semiconductor device 1. Alternatively, in the water supply step, when the ultrasonic probe 71 is moved to a position where the focal point of the ultrasonic wave is set near the center of the semiconductor device 1 in the Z-axis direction, the ultrasonic probe 71 is located below the Z-axis direction of the ultrasonic probe 71. When the tip portion comes into contact with the upper surface of the semiconductor device 1 to be detected in the Z-axis direction, the lower tip portion is moved to a position where it does not touch the upper surface of the semiconductor device 1 at the last minute. By doing so, the ultrasonic probe 71 can be in a state where it can reliably detect the reflected echo from the boundary surface between the resin 4 of the semiconductor device 1 and the device chip 3.

However, in the state where the ultrasonic probe 71 is moved in this way, for example, when the thickness of the device chip 3 is unknown, the reflected wave from the interface between the resin 4 of the semiconductor device 1 and the device chip 3 causes the ultrasonic probe 71 to move. It may be difficult to measure a certain surface wave with sufficient accuracy. Therefore, in the method for detecting the planned division line according to the second embodiment, even if the thickness of the device chip 3 in the Z-axis direction is unknown, the preparation ultrasonic measurement step ST7, the preparation detection step ST8, and the surface wave detection determination step ST10 are performed with ultrasonic waves. By performing the measurement step ST2 and the detection step ST3 before the execution, it is possible to measure the surface wave, which is the reflected wave from the interface between the resin 4 of the semiconductor device 1 and the device chip 3, with sufficient accuracy. Can be in a state.

In the preparation ultrasonic measurement step ST7, the semiconductor device 1 to be detected and the ultrasonic probe 71 functioning as an ultrasonic irradiation means are relatively moved at predetermined intervals in the Z-axis direction, which is the thickness direction of the semiconductor device 1, to form a semiconductor. This is a step of irradiating the inside of the device 1 with ultrasonic waves and measuring the preparatory reflection echoes 170-1 and 170-2 shown in FIGS. 12 and 13. The preparatory ultrasonic measurement step ST7 is performed after the water supply step has been performed. In the following, the present specification appropriately distinguishes the reflected echo measured in the preparatory ultrasonic measurement step ST7 from the reflected echo 150-1, 150-2, 150-3 measured in the ultrasonic measurement step ST2. , Preparatory reflection echoes 170-1, 170-2.

FIG. 11 is an explanatory diagram illustrating the preparatory ultrasonic measurement step ST7 of FIG. FIG. 12 is an explanatory diagram showing an example of the preparatory reflection echo measured in the preparatory ultrasonic measurement step ST7 of FIG. FIG. 13 is an explanatory diagram showing another example of the preparatory reflection echo measured in the preparatory ultrasonic measurement step ST7 of FIG. Note that FIG. 11 shows the ultrasonic probe 71 and the semiconductor device 1 to be detected, and the illustration of each other component of the detection device 90 of the planned division line is omitted.

In the preparation ultrasonic measurement step ST7, in detail, first, the control unit 100 controls the X-axis moving unit 30 and the Y-axis moving unit 40 to move the ultrasonic probe 71 in the X-axis direction or the Y-axis direction. As a result, as shown in FIG. 11, the semiconductor device 1 to be detected is moved so as to be on the upper side in the Z-axis direction.

In the preparation ultrasonic measurement step ST7, after that, the control unit 100 controls the Z-axis moving unit 50, so that the ultrasonic probe 71 is placed at a predetermined distance from the lower limit position in the Z-axis direction, for example, about several tens of μm. By moving the ultrasonic waves upward in the Z-axis direction to the upper limit position in the Z-axis direction, ultrasonic waves are irradiated and reflected waves are acquired while moving the ultrasonic waves in the Z-axis direction at predetermined intervals. That is, in the preparatory ultrasonic measurement step ST7, the ultrasonic probe 71 is irradiated with ultrasonic waves while being gradually moved away from the state closest to the semiconductor device 1 to be detected, and the reflected wave. To get. Here, the lower limit position of the ultrasonic probe 71 in the Z-axis direction is the position of the ultrasonic probe 71 moved at the stage of the water supply step. Further, the position of the upper limit of the ultrasonic probe 71 in the Z-axis direction is the reflection reflected on the surface of the resin 4 of the semiconductor device 1 to be detected when the ultrasonic probe 71 is moved to the upper side in the Z-axis direction. The position of the ultrasonic probe 71 when the intensity of the surface wave voltage signal 171 (see FIGS. 12 and 13), which is an echo, changes from an increase to a decrease. In the first embodiment, in the preparatory ultrasonic measurement step ST7, the ultrasonic probe 71 is moved upward in the Z-axis direction from the lower limit position in the Z-axis direction to the upper limit position in the Z-axis direction. However, the present invention is not limited to this, and the ultrasonic probe 71 is moved downward in the Z-axis direction from the upper limit position in the Z-axis direction to the lower limit position in the Z-axis direction. May be.

In the preparation ultrasonic measurement step ST7, the focal point of the ultrasonic wave irradiated by the ultrasonic probe 71 is moved to the upper side in the Z-axis direction by irradiating the ultrasonic wave while moving the ultrasonic probe 71 to the upper side in the Z-axis direction. .. In the preparation ultrasonic measurement step ST7, the ultrasonic measuring unit 110 further irradiates the ultrasonic 140 with the ultrasonic probe 71 in each state in which the ultrasonic probe 71 is moved in the Z-axis direction at predetermined intervals. The preparatory reflection echoes 170-1 and 170-2 shown in FIGS. 12 and 13 are detected and acquired.

Hereinafter, in the preparatory ultrasonic measurement step ST7, as shown in FIG. 11, the focal point of the ultrasonic 140 irradiated by the ultrasonic probe 71 with respect to the ultrasonic probe 71 is in the Z-axis direction with respect to the device chip 3. On a straight line along the Z-axis direction including the position set at the internal point 160-1 of the upper resin 4 and the position set at the internal point 160-2 of the device chip 3 of the ultrasonic 140. A case where the preparatory reflection echoes 170-1 and 170-2 are acquired by moving relative to the semiconductor device 1 to be detected will be described with reference to FIGS. 12 and 13 in addition to FIG.

As shown in FIG. 11, the preparatory reflection echo 170-1 shown in FIG. 12 is detected by irradiating the ultrasonic 140 with the focus of the ultrasonic 140 to be irradiated by the ultrasonic probe 71 set to the point 160-1. If so, it is acquired by the ultrasonic receiver 112 of the ultrasonic measuring unit 110.

As shown in FIG. 12, the preparatory reflected echo 170-1 includes a surface wave voltage signal 171 that is a reflected wave reflected on the surface of the resin 4 of the semiconductor device 1 to be detected, and the semiconductor device 1 to be detected. It has a back surface, that is, a voltage signal 172 of a back surface wave which is a reflected wave reflected at the interface between the back surface of the rewiring layer 8 and the water 79. In the preparatory reflection echo 170-1, the focal point of the ultrasonic wave 140 to be irradiated is set to the point 160-1 on the resin 4 side of the boundary surface between the resin 4 and the device chip 3, so that the resin 4 and the device chip 3 It does not have the voltage signal of the reflected wave reflected at the boundary surface of. In general, the voltage signal of the reflected wave at the contact interface is much stronger than the voltage signal of the reflected wave at the junction interface. Therefore, depending on the position of the focal point of the ultrasonic 140 in the Z-axis direction, the resin 4 and the resin 4 Although the voltage signal of the reflected wave reflected at the interface with the device chip 3 is not detected, the reflected wave reflected at the interface between the back surface of the rewiring layer 8 and the water 79, which is further below the interface in the Z-axis direction. The backside wave voltage signal 172 may be detected.

As shown in FIG. 11, the preparatory reflection echo 170-2 shown in FIG. 13 is detected by irradiating the ultrasonic 140 with the focus of the ultrasonic 140 to be irradiated by the ultrasonic probe 71 set to the point 160-2. If so, it is acquired by the ultrasonic receiver 112 of the ultrasonic measuring unit 110.

As shown in FIG. 13, the preparatory reflection echo 170-2 includes the resin 4 and the device chip in addition to the front surface wave voltage signal 171 and the back surface wave voltage signal 172 similar to those of the preparatory reflection echo 170-1. It has a voltage signal 173 of a surface wave, which is a reflected wave reflected at the interface with 3. In the preparatory reflection echo 170-2, the focal point of the ultrasonic wave 140 to be irradiated is set to the point 160-2 on the device chip 3 side slightly from the interface between the resin 4 and the device chip 3, so that the point 160-1 is set. Since the focal point of the ultrasonic wave 140 to be irradiated is closer to the boundary surface between the resin 4 and the device chip 3, the ultrasonic wave 140 has an interface wave voltage signal 173.

In the preparation ultrasonic measurement step ST7, as described above, the ultrasonic receiver 112 of the ultrasonic measuring unit 110 performs ultrasonic measurement using the ultrasonic probe 71, so that the ultrasonic 140 irradiated by the ultrasonic probe 71. When the focus of is set to point 160-1, the preparatory reflection echo 170-1 having no interface wave voltage signal 173 is acquired, and the focus of the ultrasonic 140 irradiated by the ultrasonic probe 71 is point 160-. When set to 2, the preparatory reflected echo 170-2 having the voltage signal 173 of the interface wave is acquired.

In the preparation ultrasonic measurement step ST7, the control unit 100 controls the Z-axis moving unit 50 to scan and move the ultrasonic probe 71 along each position arranged in the Z-axis direction at predetermined intervals. Preparatory reflection echoes 170-1 and 170-2 are acquired at all measurement points. Further, in the preparation of the method for detecting the planned division line according to the second embodiment, in the ultrasonic measurement step ST7, the focal point of the ultrasonic wave is focused between at least two points sandwiching the boundary surface between the resin 4 and the device chip 3 in the Z-axis direction. The preparatory reflection echoes 170-1 and 170-2 are measured while moving the ultrasonic probe 71 in the Z-axis direction so as to move. Further, in the second embodiment, in the preparatory ultrasonic measurement step ST7, all the preparatory reflection echoes acquired while the semiconductor device 1 held on the holding table 11 and the ultrasonic probe 71 are relatively moved in the thickness direction at predetermined intervals. The control unit 100 temporarily stores 170-1 and 170-2. That is, in the second embodiment, the control unit 100 temporarily stores the same number of preparatory reflection echoes 170-1 and 170-2 as the measurement points.

In the preparatory detection step ST8, the thickness of irradiating ultrasonic waves in the ultrasonic measurement step ST2 from the distribution of the voltage signals 171, 172, and 173 of each wave in the thickness direction of the semiconductor device 1 of the preparatory reflection echoes 170-1 and 170-2. It is a step to determine the position of the direction.

In the preparation detection step ST8, in detail, first, the ultrasonic detector 113 of the ultrasonic measurement unit 110 with respect to the preparation reflection echoes 170-1 and 170-2 acquired by the ultrasonic receiver 112 of the ultrasonic measurement unit 110. The intensity of the interface wave voltage signal 173 in the gate set in a predetermined range including the time when the interface wave voltage signal 173 is detected is measured. In the preparation detection step ST8, information on the intensity of the voltage signal 173 of the interface wave in the gate is acquired as measurement data.

In the preparation detection step ST8, the ultrasonic measuring unit 110 measures the voltage of the interfacial wave having the highest intensity among the intensities of the interfacial voltage signals 173 of the preparatory reflected echoes 170-1 and 170-2 measured by the ultrasonic detector 113. The preparatory reflection echoes 170-1 and 170-2 having the signal 173 are extracted. In the preparation detection step ST8, the position of the ultrasonic probe 71 in the Z-axis direction when the ultrasonic measurement unit 110 measures the preparation reflection echoes 170-1 and 170-2 having the voltage signal 173 of the interface wave having the highest intensity. Is calculated. The position of the ultrasonic probe 71 calculated here by the ultrasonic measuring unit 110 in the Z-axis direction is such that the focus of the ultrasonic 140 irradiated by the ultrasonic probe 71 is on or near the interface between the resin 4 and the device chip 3. It becomes the position set to. In the preparation detection step ST8, the ultrasonic measuring unit 110 then determines the calculated position of the ultrasonic probe 71 in the Z-axis direction at the position of the ultrasonic probe 71 to be irradiated with ultrasonic waves in the ultrasonic measuring step ST2.

The position of the tip of the ultrasonic probe 71 where the voltage signal 173 of the surface wave is maximized in the Z-axis direction is larger than the position of the tip of the ultrasonic probe 71 where the voltage signal 171 of the surface wave is maximum in the Z-axis direction. , Is on the lower side in the Z-axis direction. Further, the position in the Z-axis direction of the tip portion of the ultrasonic probe 71 at which the voltage signal 173 of the surface wave is maximized is larger than the position where the tip portion of the ultrasonic probe 71 is brought closer to the lower side in the Z-axis direction to the limit. It is on the upper side in the Z-axis direction. Therefore, in the preparation detection step ST8, the tip of the ultrasonic probe 71 at which the voltage signal 173 of the interface wave becomes maximum within the range in the Z-axis direction in which the tip portion of the ultrasonic probe 71 is moved in the preparation ultrasonic measurement step ST7. The position of the portion in the Z-axis direction is calculated, and the position in the Z-axis direction of the tip portion of the ultrasonic probe 71 at which the calculated voltage signal 173 of the interface wave is maximized is ultrasonically irradiated in the ultrasonic measurement step ST2. Determine the position of the probe 71.

The preparation detection step ST8 preferably includes the preparation image processing step ST9. In this case, the preparatory image processing step ST9 is a step of converting the distribution of the voltage signals 171, 172, 173 of each wave of the preparatory reflection echoes 170-1 and 170-2 into the preparatory image data having color information. Further, in this case, the preparation detection step ST8 is an ultrasonic probe 71 that irradiates ultrasonic waves in the ultrasonic measurement step ST2 according to the distribution of the color information of the preparation image data in the thickness direction of the semiconductor device 1 to be detected. It is a step to determine the position of.

When the preparation detection step ST8 includes the preparation image processing step ST9, in the preparation image processing step ST9, in detail, the ultrasonic measuring unit 110 acquires the voltage signal of each wave acquired by the ultrasonic detector 113 of the ultrasonic measuring unit 110. Regarding the information on the intensity of 171, 172, 173, each pixel at the position in the Z-axis direction, which is the thickness direction of the semiconductor device 1, when the intensity of the voltage signal 171, 172, 173 of each wave satisfies each predetermined condition, is displayed. A one-dimensional image including a plurality of colors is created as each predetermined color.

FIG. 14 is an explanatory diagram showing an example of the prepared image data obtained in the prepared image processing step ST9 of FIG. The preparatory image data 180 shown in FIG. 14 is obtained by executing the preparatory image processing step ST9 for the semiconductor device 1 to be detected, and is a pixel region of each color from the upper side to the lower side in the Z-axis direction. It has 181,182,183,184,185.

The pixel region 181 is a region colored in the first color, which is provided with parallel diagonal lines descending to the right with narrow intervals in FIG. The pixel region 181 corresponds to a region where the voltage signal 171 of the surface wave is detected at a predetermined threshold value or higher, and the position of the focal point of the ultrasonic wave 140 to be irradiated in the Z-axis direction is the detection target of the semiconductor device 1. It corresponds to a region near the surface of the resin 4, that is, near the boundary surface between the surface of the resin 4 and the water 79.

The pixel region 182 is a region colored in a second color, which is provided with parallel diagonal lines rising to the right with wide intervals in FIG. The pixel region 182 is a voltage signal 171 of each wave between a region where the voltage signal 171 of the surface wave is detected above a predetermined threshold and a region where the voltage signal 173 of the interface wave is detected above a predetermined threshold. Both 172 and 173 correspond to regions detected below a predetermined threshold value, and the position of the focal point of the irradiated ultrasonic wave 140 in the Z-axis direction is the device chip in the resin 4 of the semiconductor device 1 to be detected. It corresponds to the area inside the part above 3. That is, the length of the pixel region 182 in the Z-axis direction, the time interval between the voltage signal 171 of the surface wave and the voltage signal 173 of the interface wave, and the thickness of the portion of the resin 4 of the semiconductor device 1 above the device chip 3. However, they correspond to each other.

The pixel region 183 is a region colored in a third color, which has a pattern in which parallel diagonal lines falling to the right and parallel diagonal lines rising to the right intersect in FIG. The pixel region 183 corresponds to a region in which the voltage signal 173 of the surface wave is detected at a predetermined threshold value or higher, and the position of the focal point of the ultrasonic wave 140 to be irradiated in the Z-axis direction is the detection target of the semiconductor device 1. It corresponds to the region near the interface between the resin 4 and the device chip 3.

The pixel region 184 is a region colored in the fourth color, which is provided with parallel diagonal lines with wide intervals and downward slopes in FIG. 14. The pixel region 182 is a voltage signal 171 of each wave between a region where the voltage signal 173 of the interface wave is detected above a predetermined threshold value and a region where the voltage signal 172 of the back surface wave is detected above a predetermined threshold value. Both 172 and 173 correspond to the regions detected below a predetermined threshold value, and the position of the focal point of the irradiated ultrasonic wave 140 in the Z-axis direction corresponds to the device chip 3 of the semiconductor device 1 to be detected and the repeat. It corresponds to the area inside the wiring layer 8. That is, the sum of the length of the pixel region 184 in the Z-axis direction, the time interval between the voltage signal 173 of the surface wave and the voltage signal 172 of the back surface wave, and the thickness of the device chip 3 and the rewiring layer 8 of the semiconductor device 1. And correspond to each.

In the present embodiment, since the ultrasonic probe 71 is scanned in the vicinity of the region where the voltage signal 173 of the interface wave is detected as a value clearly larger than the predetermined threshold value, the boundary between the device chip 3 and the rewiring layer 8 is reached. Although it is highly likely that the voltage signal caused by the surface is not detected, the present invention is not limited to this, and the voltage signal caused by the interface between the device chip 3 and the rewiring layer 8 is detected and the device chip is detected. Even if the preparatory image data in which the region corresponding to 3, the region corresponding to the boundary surface between the device chip 3 and the rewiring layer 8 and the region corresponding to the rewiring layer 8 are colored in different colors is obtained. good.

The pixel region 185 is a region colored in the fifth color, which is provided with parallel diagonal lines rising to the right with narrow intervals in FIG. The pixel region 185 corresponds to a region where the voltage signal 172 of the back surface wave is detected at a predetermined threshold value or higher, and the position of the focal point of the ultrasonic wave 140 to be irradiated in the Z-axis direction is the detection target of the semiconductor device 1. It corresponds to the vicinity of the back surface of the rewiring layer 8, that is, the region serving as the boundary surface between the back surface of the rewiring layer 8 and the water 79.

The pixel regions 182 and 184 are regions in which all of the voltage signals 171, 172, and 173 of each wave are detected below a predetermined threshold value, but each wave detected below the predetermined threshold value. From the information such as the intensity ratio of the voltage signals 171 and 172, 173, the control unit 100 can separate and detect these regions and perform image processing in which each region is individually colored.

When the preparation detection step ST8 includes the preparation image processing step ST9 and the preparation image data 180 is obtained in the preparation image processing step ST9, in the preparation detection step ST8, the control unit 100 first converts in the preparation image processing step ST9. In the obtained prepared image data 180, the position of the pixel region 183 in the Z-axis direction is calculated based on each pixel region of each color. In such a case, in the preparation detection step ST8, the control unit 100 ultrasonically measures the position of the ultrasonic probe 71, which is the focal point of the ultrasonic wave 140 irradiated by the central position of the position in the Z-axis direction of the pixel region 183. In step ST2, the position where the ultrasonic probe 71 irradiates ultrasonic waves, that is, the position of the ultrasonic probe 71 in the Z-axis direction is determined. In the preparation detection step ST8, the optimum position of the ultrasonic probe 71 in the Z-axis direction in the ultrasonic measurement step ST2 can be detected and set in this way.

FIG. 15 is an explanatory diagram showing another example of the prepared image data obtained in the prepared image processing step ST9 of FIG. The preparatory image data 190 shown in FIG. 15 is obtained by executing the preparatory image processing step ST9 for the semiconductor device 1 to be detected, similarly to the preparatory image data 180 shown in FIG. From the upper side to the lower side in the direction, it has pixel regions 192, 194 of each color. The preparation image data 190 is a form in which the preparation image data 180 described above does not have the pixel regions 181, 183, 185. Here, the fact that the pixel regions 181,183,185 are not provided means that the thickness of the pixel regions 181,183,185 in the Z-axis direction has become thinner than the minimum region in which the image can be created by the ultrasonic measuring unit 110. Therefore, it also includes a form that does not appear on the image substantially.

The pixel area 192 in the preparation image data 190 corresponds to the pixel area 182 in the preparation image data 180, and the pixel area 192 in the preparation image data 190 corresponds to the pixel area 182 in the preparation image data 180. Further, the upper end of the pixel region 192 in the prepared image data 190 substantially corresponds to the pixel region 181 in the prepared image data 180, and the boundary line between the pixel region 192 and the pixel region 194 in the prepared image data 190 is prepared. The lower end of the pixel region 194 in the prepared image data 190 substantially corresponds to the pixel region 183 in the image data 180, and substantially corresponds to the pixel region 185 in the prepared image data 180.

When the preparation detection step ST8 includes the preparation image processing step ST9 and the preparation image data 190 is obtained in the preparation image processing step ST9, the preparation image data 190 does not have a region corresponding to the pixel region 183 in the preparation image data 180. In the preparation detection step ST8, the control unit 100 first calculates, in the preparation image data 190, the position in the Z-axis direction at the boundary between the pixel area 192 and the pixel area 194 based on each pixel area of each color. In such a case, in the preparation detection step ST8, the control unit 100 determines the position of the ultrasonic probe 71, which is the focal point of the ultrasonic 140 irradiated by the position in the Z-axis direction at the boundary between the pixel region 192 and the pixel region 194. In the ultrasonic measurement step ST2, the position where the ultrasonic probe 71 irradiates the ultrasonic wave, that is, the position in the Z-axis direction of the ultrasonic probe 71 is determined. In the preparation detection step ST8, the optimum position of the ultrasonic probe 71 in the Z-axis direction in the ultrasonic measurement step ST2 can be detected and set in this way.

In the surface wave detection determination step ST10, the surface wave voltage signal 173 is detected with sufficient intensity by moving the ultrasonic probe 71 to the position in the Z-axis direction determined in the preparation detection step ST8 and performing ultrasonic measurement. It is a step to determine whether or not it is. Specifically, in the surface wave detection determination step ST10, the control unit 100 moves the ultrasonic probe 71 to the position in the Z-axis direction determined in the preparation detection step ST8 to perform ultrasonic measurement, whereby the surface wave is measured. When the voltage signal 173 is detected with an intensity equal to or higher than a predetermined threshold value, it is determined that the surface wave voltage signal 173 is detected with sufficient intensity (surface wave detection determination step ST10: Yes), and the processing is performed in the ultrasonic measurement step ST2. Proceed to. Since the processing after the ultrasonic measurement step ST2 is the same as that of the first embodiment, detailed description thereof will be omitted.

On the other hand, the control unit 100 moves the ultrasonic probe 71 to the position in the Z-axis direction determined in the preparation detection step ST8 to perform ultrasonic measurement, so that the voltage signal 173 of the interface wave has an intensity less than a predetermined threshold value. If only detected, it is determined that the voltage signal 173 of the interface wave was not detected with sufficient intensity (interfacial wave detection determination step ST10: No), and after moving the ultrasonic probe 71 in the horizontal direction by a predetermined distance, Preparation of processing Return to ultrasonic measurement step ST7. The preparation ultrasonic measurement step ST7 and the preparation detection step ST8 are repeated until it is determined in the interface wave detection determination step ST10 that the voltage signal 173 of the interface wave is detected with sufficient intensity.

The control unit 100 transmits the preparation image data 180 created in the preparation image processing step ST9 and the information on the position of the ultrasonic probe 71 detected in the preparation detection step ST8 in the Z-axis direction to the display unit 130 for display. You may. In this case, the state in which the position of the ultrasonic probe 71 in the Z-axis direction is detected can be confirmed at a glance, and the determination result of the interface wave detection determination step ST10 can be confirmed at a glance.

As described above, according to the method for detecting the planned division line according to the second embodiment, the semiconductor device 1 to be detected and the ultrasonic probe functioning as the ultrasonic irradiation means are further performed before the ultrasonic measurement step ST2 is performed. While moving 71 and 71 in the thickness direction of the semiconductor device 1 at predetermined intervals, the inside of the semiconductor device 1 to be detected is irradiated with ultrasonic waves 140 to measure the preparatory reflection echoes 170-1 and 170-2, and the semiconductor is measured. From the distribution of the voltage signals 171, 172, and 173 of each wave of the preparatory reflected echoes 170-1 and 170-2 in the thickness direction of the device 1, the position where the ultrasonic probe 71 irradiates ultrasonic waves in the ultrasonic measurement step ST2 is determined. decide. Therefore, the method for detecting the planned division line according to the second embodiment can detect and set the optimum position of the ultrasonic probe 71 in the Z-axis direction in the ultrasonic measurement step ST2.

Further, in the method for detecting the scheduled division line according to the second embodiment, the preparatory reflection echoes 170-1 and 170-2 are converted into the preparatory image data 180 having the color information, and the preparatory image data 180 is subjected to the color information. In the ultrasonic measurement step ST2, the position where the ultrasonic probe 71 irradiates the ultrasonic wave is determined. Therefore, it is possible to confirm at a glance how the ultrasonic probe 71 determines the position to irradiate the ultrasonic wave in the ultrasonic measurement step ST2.

[Embodiment 3]
FIG. 16 is a schematic configuration diagram showing a configuration example of a scheduled division line detection device 200 used in the method for detecting a scheduled division line according to the third embodiment. The method of detecting the planned division line according to the third embodiment of the present invention will be described with reference to the drawings. The method for detecting the scheduled division line according to the third embodiment is the operation of the detection device 200 for the scheduled division line. In the description of the method for detecting the planned division line according to the third embodiment, the same parts as those in the first and second embodiments are designated by the same reference numerals and the description thereof will be omitted.

As shown in FIG. 16, the detection device 200 for the scheduled division line uses an ultrasonic inspection unit 70, a water supply unit 80, a scanning device 230 for scanning the ultrasonic inspection unit 70, and an ultrasonic inspection unit 70. Based on the ultrasonic measurement device 240 that performs ultrasonic measurement, the control device 260 that controls each part of the detection device 200 of the scheduled division line, the drive device 270 that drives the scanning device 230, and the measurement data obtained by ultrasonic measurement. It includes an image processing device 280 that performs image processing, and a display unit 130 that displays an image processed image or the like.

The ultrasonic measuring device 240 includes an ultrasonic pulser 111, an ultrasonic receiver 112, and an ultrasonic detector, similarly to the ultrasonic measuring unit 110 in the detection device 90 of the planned division line used in the first and second embodiments. 113, and has the same function as the ultrasonic measuring unit 110 in the detection device 90 of the planned division line used in the first and second embodiments, and therefore the detailed description thereof will be omitted. Since the image processing device 280 has the same function as the image processing unit 120 in the detection device 90 for the scheduled division line used in the first and second embodiments, detailed description thereof will be omitted. The ultrasonic measuring device 240, the control device 260, and the image processing device 280 together have the same functions as the control unit 100 in the detection device 90 of the planned division line used in the first and second embodiments. Therefore, the detailed description thereof will be omitted.

The scanning device 230 and the driving device 270 include a holding table 11, an X-axis moving unit 30, a Y-axis moving unit 40, and a Z-axis moving unit 50 in the detection device 90 for the scheduled division line used in the first and second embodiments. It has a similar function. As shown in FIG. 16, the scanning device 230 is a device that functions as an ultrasonic scanning means for scanning an ultrasonic probe 71 for ultrasonic measurement in the X-axis direction, the Y-axis direction, and the Z-axis direction, and is a sample. It includes a stage 234, a pair of columns 235, a 3-axis scanner 236, and a holding table 237.

The sample stage 234 is a stage for mounting the semiconductor device 1 to be detected. As shown in FIG. 16, the pair of columns 235 are erected on the sample stage 234 and support the 3-axis scanner 236.

As shown in FIG. 16, the 3-axis scanner 236 includes an X-axis direction guide rail 236-1 provided parallel to the X-axis direction, a Y-axis direction guide rail 236-2 provided parallel to the Y-axis direction, and , Has a Z-axis direction guide rail 236-3 provided parallel to the Z-axis direction. The 3-axis scanner 236 is installed and supported on a pair of columns 235 at both ends of the X-axis direction guide rail 236-1.

As shown in FIG. 16, in the 3-axis scanner 236, the upper end of the ultrasonic probe 71 in the Z-axis direction is installed at the lower end of the Z-axis direction guide rail 236-3 in the Z-axis direction. There is. The 3-axis scanner 236 uses the ultrasonic probe 71 in the X-axis direction and the Y-axis along the X-axis direction guide rail 236-1, the Y-axis direction guide rail 236-2, and the Z-axis direction guide rail 236-3. It is movably supported in the direction and the Z-axis direction. The 3-axis scanner 236 is electrically connected to the drive device 270, and receives the drive force from the drive device 270 to move the ultrasonic probe 71 in the X-axis direction, the Y-axis direction, and the Z-axis direction. Can be made to.

As shown in FIG. 16, the holding table 237 is installed on the upper side of the sample stage 234 in the Z-axis direction. The holding table 237 is connected to a vacuum suction source (not shown) and is sucked by the vacuum suction source to suck and hold the semiconductor device 1 to be detected on the upper surface in the Z-axis direction. Further, around the holding table 237, a plurality of clamp portions (not shown) are provided, which are driven by an air actuator (not shown) and sandwich the outer peripheral surplus region 6 around the semiconductor device 1 to be detected. In the third embodiment, the holding table 237 holds the semiconductor device 1 to be detected so that the directions in which the plurality of device chips 3 are two-dimensionally arranged are along the X-axis direction and the Y-axis direction, respectively.

The control device 260 controls the position of the ultrasonic probe 71 by controlling the drive device 270. The control device 260 controls the scanning of the ultrasonic probe 71 in the X-axis direction and the Y-axis direction by controlling the drive device 270. The control device 260 controls the movement of the ultrasonic probe 71 in the Z-axis direction by controlling the drive device 270.

The drive device 270 operates a motor for each axis built in the 3-axis scanner 236. As a result, the drive device 270 scans and moves the ultrasonic probe 71 along the upper surface of the semiconductor device 1 to be detected in the Z-axis direction.

Next, a method for detecting a planned division line according to the third embodiment will be described. The method for detecting the scheduled division line according to the third embodiment is the operation of the detection device 200 for the scheduled division line. FIG. 17 is a flowchart of an example of a method for detecting a planned division line according to the third embodiment. FIG. 18 is a flowchart of another example of the method for detecting the scheduled division line according to the third embodiment.

As shown in FIG. 17, an example of the method for detecting the scheduled division line according to the third embodiment includes a holding step ST1, an ultrasonic measurement step ST2, and a detection step ST3. The detection step ST3 includes an image processing step ST4. In the method for detecting the scheduled division line according to the third embodiment, the alignment step ST5 and the cutting step ST6 are omitted in the method for detecting the scheduled division line according to the first embodiment.

As shown in FIG. 18, another example of the method for detecting the planned division line according to the third embodiment is the ultrasonic measurement step ST2 and the ultrasonic measurement step ST2 in addition to the holding step ST1, the ultrasonic measurement step ST2, and the detection step ST3. Prior to the detection step ST3, a preparatory ultrasonic measurement step ST7, a preparatory detection step ST8, and a surface wave detection determination step ST10 are further provided. The detection step ST3 includes an image processing step ST4. The preparation detection step ST8 includes a preparation image processing step ST9. In the method for detecting the scheduled division line according to the third embodiment, the alignment step ST5 and the cutting step ST6 are omitted in the method for detecting the scheduled division line according to the second embodiment.

As described above, according to the method for detecting the scheduled division line according to the third embodiment, the method for detecting the scheduled division line according to the first and second embodiments is the same except for the parts related to the alignment step ST5 and the cutting step ST6. It has an effect.

Further, since the method for detecting the scheduled division line according to the third embodiment uses the detection device 200 for the scheduled division line not provided with the cutting unit 20, it is easy even when it is not necessary to cut the semiconductor device 1 to be detected. Can be preferably carried out.

[Modification 1]
FIG. 19 is a surface view showing an example of the semiconductor device 301 that is the target of the method for detecting the planned division line according to the first modification of the first embodiment to the third embodiment. FIG. 20 is a cross-sectional view taken along the line XX-XX of the semiconductor device 301 of FIG. A method for detecting a planned division line according to a modification 1 of the first to third embodiments of the present invention will be described with reference to the drawings. The method for detecting a planned division line according to a modification 1 of the first to third embodiments of the present invention is a method for detecting a scheduled division line according to each of the first to third embodiments of the present invention. The target of the line detection method is changed from the semiconductor device 1 to the semiconductor device 301. In the description of the method for detecting the planned division line according to the first modification of the first to the third embodiment, the same parts as those of the first to third embodiments are designated by the same reference numerals and the description thereof will be omitted.

As shown in FIGS. 19 and 20, the semiconductor device 301 has a package substrate shape, that is, a rectangular plate shape, and has a plurality of device chips 3, a resin 4, a planned division line 5, an outer peripheral surplus region 6, and the like. It has a solder bump 303, a package substrate 304, and a solder ball 305. Since the plurality of device chips 3, the resin 4, the planned division line 5, and the outer peripheral surplus region 6 in the semiconductor device 301 are the same as those in the semiconductor device 1, detailed description thereof will be omitted.

In the semiconductor device 301 shown in FIGS. 19 and 20, for example, a device chip 3 obtained by dividing a predetermined wafer is arranged on a package substrate 304 via a solder bump 303 and sealed with a resin 4. It is manufactured by.

As shown in FIG. 20, the solder bump 303 is arranged on the back side of the device chip 3, that is, on the side opposite to the side of the device chip 3 covered with the resin 4. The solder bump 303 electrically conductably joins the device chip 3 and the package substrate 304 on which the device chip 3 is placed.

As shown in FIG. 20, the package substrate 304 is arranged on the back side of the solder bump 303, that is, on the side opposite to the side where the device chip 3 of the solder bump 303 is provided. The device chip 3 is mounted on the surface side of the package substrate 304 via the solder bump 303. The package substrate 304 is provided in common to the plurality of device chips 3 and the planned division line 5. The package board 304 is a board provided with an electric circuit for electrically connecting the device chip 3 and the printed wiring board on which the device chip 3 is mounted.

As shown in FIG. 20, a plurality of solder balls 305 are uniformly arranged on the back side of the package substrate 304, that is, on the side of the package substrate 304 opposite to the side on which the device chip 3 is arranged. The solder ball 305 is used for electrically conductively joining the package substrate 304 and the printed wiring board after the semiconductor device 301 is divided into each device chip 3.

The semiconductor device 301 is divided into device chips 3 along the scheduled division line 5, and is divided into individual package devices 307 shown in FIGS. 19 and 20. The package device 307 includes a package substrate 304 on which the solder balls 305 are arranged, one device chip 3 mounted on the package substrate 304, and a resin 4 that seals the device chip 3. In the first modification, the package device 307 is a form of a package of almost the smallest semiconductor component in which a part of a single device chip 3 is left exposed without internal wiring by a bonding wire, WLCSP (Wafer). Level Chip Size Package). Since the package device 307, which is a WLCSP, has the same package area as the horizontal area of the device chip 3, a small occupied area can be required when the single device chip 3 is surface-mounted on the printed circuit board.

Next, a method for detecting a planned division line according to a modification 1 of the first to third embodiments of the present invention will be described. FIG. 21 is an explanatory diagram showing an example of image data 315 obtained in the image processing step ST4 of the method for detecting a scheduled division line according to the first modification of the first embodiment to the third embodiment. The method for detecting the planned division line according to the first modification of the first to third embodiments of the present invention is the image processing in the method for detecting the scheduled division line according to each of the first to third embodiments of the present invention. The image data obtained in step ST4 is changed to the image data 315.

The image data 315 shown in FIG. 21 is obtained by executing the image processing step ST4 on the semiconductor device 301 to be detected, and includes a pixel region 317 of the first color, a pixel region 318 of the second color, and the like. Has.

As shown in FIG. 21, the pixel region 317 of the first color in the image data 315 corresponds to the region in which the device chips 3 are arranged. As shown in FIG. 21, the second color pixel region 318 in the image data 315 corresponds to a region in which the device chips 3 are not arranged, that is, a division scheduled line 5 and an outer peripheral surplus region 6.

As described above, according to the method for detecting the scheduled division line according to the first modification of the first to the third embodiment, the method for detecting the scheduled division line according to each of the first to third embodiments is divided. Since the target of the scheduled line detection method is changed to the semiconductor device 301 and the image data obtained in the image processing step ST4 is changed to the image data 315, it relates to each embodiment of the first to third embodiments. It has the same effect as the method of detecting the scheduled division line.

[Modification 2]
FIG. 22 is a surface view showing an example of the semiconductor device 331, which is the target of the method for detecting the planned division line according to the second embodiment of the first to the third embodiment. FIG. 23 is a cross-sectional view taken along the line XXIII-XXIII in the semiconductor device 331 of FIG. 22. The method of detecting the planned division line according to the second embodiment of the first to third embodiments of the present invention will be described with reference to the drawings. The method for detecting the planned division line according to the second embodiment of the first to third embodiments of the present invention is scheduled to be divided in the method for detecting the scheduled division line according to each of the first to third embodiments of the present invention. The target of the line detection method is changed from the semiconductor device 1 to the semiconductor device 331. In the description of the method for detecting the planned division line according to the second embodiment of the first to the third embodiment, the same parts as those of the first to the third embodiments are designated by the same reference numerals and the description thereof will be omitted.

As shown in FIGS. 22 and 23, the semiconductor device 331 has a wafer shape, that is, a circular plate shape, and has a plurality of device chips 3, a resin 4, a planned division line 5, an outer peripheral surplus region 6, and a groove. It has a 332 and a bump 333. Since the plurality of device chips 3, the resin 4, the planned division line 5, and the outer peripheral surplus region 6 in the semiconductor device 331 are the same as those in the semiconductor device 1, detailed description thereof will be omitted.

The semiconductor device 331 shown in FIGS. 22 and 23 is a form of a package of semiconductor parts, and is a half that is a source of a groove 332 along a planned division line 5 with respect to a wafer that is a source of a plurality of device chips 3. By forming a cut groove, covering the half-cut groove with the resin 4 from the front surface, sealing and embedding it, and polishing the half-cut groove from the back surface, the half-cut groove is placed between two adjacent device chips 3. It is manufactured by forming a groove 332 to be formed.

The groove 332 is provided along the planned division line 5, and the resin 4 is embedded therein. The bump 333 is provided on the surface of the device chip 3 so as to penetrate the resin 4 and project. In the semiconductor device 331, the resin 4 in the groove 332 is divided for each device chip 3 along the scheduled division line 5, and the semiconductor device 331 is divided into the package device 337 shown in FIG. 23.

Next, a method for detecting a planned division line according to a modification 2 of the first to third embodiments of the present invention will be described. The method for detecting the planned division line according to the second embodiment of the first to third embodiments of the present invention is compared with the method for detecting the scheduled division line according to each of the first to third embodiments of the present invention. , Except that the bump 333 may have a slight effect on the ultrasonic measurement in the ultrasonic measurement step ST2 and the preparation ultrasonic measurement step ST7.

As described above, according to the method for detecting the planned division line according to the second modification of the first to third embodiments, the method is compared with the detection method for the scheduled division line according to each of the first to third embodiments. Since the bumps 333 are substantially the same in the ultrasonic measurement in the ultrasonic measurement step ST2 and the preparation ultrasonic measurement step ST7 except that the bump 333 may have a slight effect, the first to third embodiments are the same. It has the same effect and effect as the method for detecting the scheduled division line according to each embodiment of.

Further, according to the method for detecting the planned division line according to the above-mentioned first, second and third embodiments and the modified examples 1 and 2 of each embodiment, the following planned split line detection device can be obtained. ..
(Appendix 1)
A detection device that detects a planned division line for individualizing a semiconductor device having a plurality of device chips sealed in a resin for each device chip.
A holding table for holding the semiconductor device and
Ultrasonic measurement that irradiates a predetermined thickness portion of the semiconductor device with ultrasonic waves and measures reflected echo while relatively moving the semiconductor device held on the holding table and the ultrasonic irradiation means at predetermined intervals in the horizontal direction. Means and
A control means for controlling each part of the ultrasonic measuring means,
Equipped with
The control means is a device for detecting a scheduled division line, which comprises detecting the scheduled division line from the distribution of the reflected echo.
(Appendix 2)
The ultrasonic measuring means is
Before measuring the reflected echo,
While the semiconductor device and the ultrasonic irradiation means are relatively moved in the thickness direction of the semiconductor device at predetermined intervals, the inside of the semiconductor device is irradiated with ultrasonic waves and the preparatory reflection echo is measured.
The control means is
Before measuring the reflected echo,
The device for detecting a scheduled division line according to Appendix 1, wherein the position to irradiate ultrasonic waves when measuring the reflected echo is determined from the distribution of the prepared reflected echo in the thickness direction of the semiconductor device.
(Appendix 3)
A cutting device that separates a semiconductor device having a plurality of device chips sealed in resin into individual pieces for each device chip.
A holding table for holding the semiconductor device and
A cutting unit that cuts the semiconductor device held on the holding table, and
Ultrasonic measurement that irradiates a predetermined thickness portion of the semiconductor device with ultrasonic waves and measures reflected echo while relatively moving the semiconductor device held on the holding table and the ultrasonic irradiation means at predetermined intervals in the horizontal direction. Means and
Control means to control each component and
Equipped with
The control means is a cutting device characterized by detecting the planned division line from the distribution of the reflected echo.

Similar to the method for detecting the planned division line according to the first and second embodiments, the detection device and the cutting device for the scheduled division line include a semiconductor device to be detected and an ultrasonic probe that functions as an ultrasonic irradiation means. While moving relative to each other in the horizontal direction at predetermined intervals, ultrasonic waves are irradiated to a predetermined thickness portion of the semiconductor device to be detected, reflected echo is measured, and a planned division line is detected from the distribution of the reflected echo. Therefore, since the detection device for the scheduled division line does not perform machining to detect the scheduled split line, it is possible to reduce the possibility that cutting chips due to machining adhere to the device chip.

The present invention is not limited to the above embodiment. That is, it can be variously modified and carried out within a range that does not deviate from the gist of the present invention.

1,301,331 Semiconductor device 3 Device chip 4 Resin 5 Scheduled division line 6 Outer peripheral surplus area 7,307,337 Package device 8 Rewiring layer 9,305 Solder ball 10 Cutting device 11 Holding table 12 Holding surface 13 Rotation drive source 20 Cutting unit 21 Cutting blade 22 Spindle 23 Spindle housing 30 X-axis moving unit 31,41,51 Ball screw 32,42,52 Pulse motor 33,43,53 Guide rail 34 X-direction position detection unit 35,45 Linear scale 36,46 Read head 40 Y-axis movement unit 44 Y-direction position detection unit 50 Z-axis movement unit 54 Z-direction position detection unit 60 Imaging unit 70 Ultrasound inspection unit 71 Ultrasound probe 71-1, 71-2, 71-3 Position 72 Holder 73 Water supply path 78 Space 79 Water 80 Water supply unit 90,200 Detection device for planned division line 100 Control unit 110 Ultrasonic measurement unit 111 Ultrasonic pulser 112 Ultrasonic receiver 113 Ultrasonic detector 120 Image processing unit 130 Display unit 140, 140-1, 140-2, 140-3 Ultrasound 150-1, 150-2, 150-3 Reflected echo 151,152,153,171,172,173 Voltage signal 155,315 Image data 157,158,181, 182,183,184,185,192,194,317,318 Pixel area 160-1,160-2 points 170-1,170-2 Preparation reflection echo 180,190 Preparation image data 230 Scanning device 234 Sample stage 235 Support 236 3-axis scanner 236-1 X-axis guide rail 236-2 Y-axis guide rail 236-3 Z-axis guide rail 237 Holding table 240 Ultrasonic measuring device 260 Control device 270 Drive device 280 Image processing device 303 Solder bump 304 Package Board 332 Groove 333 Bump

Claims (3)

It is a detection method for detecting a planned division line for individualizing a semiconductor device having a plurality of device chips sealed in a resin for each device chip.
A holding step of holding the semiconductor device on the holding table,
Ultrasonic measurement that irradiates a predetermined thickness portion of the semiconductor device with ultrasonic waves and measures reflected echo while relatively moving the semiconductor device held on the holding table and the ultrasonic irradiation means at predetermined intervals in the horizontal direction. Steps and
A detection step for detecting the planned division line from the distribution of the reflected echo,
Equipped with
Before performing the ultrasonic measurement step,
A preparatory ultrasonic measurement step of irradiating the inside of the semiconductor device with ultrasonic waves and measuring a preparatory reflected echo while relatively moving the semiconductor device and the ultrasonic irradiation means at predetermined intervals in the thickness direction of the semiconductor device.
From the distribution of the preparatory reflection echo in the thickness direction of the semiconductor device, a preparatory detection step for determining a position to irradiate ultrasonic waves in the ultrasonic measurement step, and a preparatory detection step.
A method for detecting a planned division line. The detection step is
Further provided with an image processing step of converting the reflected echo into image data having color information.
The method for detecting a scheduled division line according to claim 1, wherein the scheduled division line is detected according to the color information of the image data. The preparation detection step is
Further provided with a preparatory image processing step of converting the preparatory reflection echo into preparatory image data having color information.
The method for detecting a planned division line according to claim 1 or 2 , wherein the position to irradiate the ultrasonic wave is determined in the ultrasonic measurement step according to the color information of the prepared image data.

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