JP7267027B2 - high frequency module - Google Patents

Description

The present disclosure relates to radio frequency modules.

In recent years, as radio systems using the millimeter wave band, high-speed communication by wireless LAN (Local Area Network) using the 60 GHz band and vehicle-mounted radar using the 76 GHz band have been put to practical use. In the future, expectations are rising for application to radio technology in frequency bands exceeding 100 GHz. For example, a transmission rate of several tens of Gbps to 100 Gbps is required to transfer large amounts of data such as high-definition 4K video and 8K video without compression. In order to meet the demand for such a transmission speed, the use of the terahertz band, for example, the use of the 300 GHz band, which enables communication in a wider band than the microwave band or the millimeter wave band, is under study.

Patent Literature 1 describes an example of a high-frequency package used in a millimeter-wave band wireless device.

Japanese Patent Application Laid-Open No. 2001-102821 JP 2014-190720 A

In wireless devices that use frequencies in the millimeter wave band and above, the passband of signals passing through the device (for example, between the high-frequency circuit and the antenna) is narrow in a configuration in which an antenna and a high-frequency circuit, etc. are mounted on a substrate. Insufficient consideration was given to the

Non-limiting embodiments of the present disclosure contribute to providing a high-frequency module capable of widening a signal passband.

A high frequency module according to an embodiment of the present disclosure includes a coupling element provided on a first substrate, a second substrate different from the first substrate, and a waveguide disposed in contact with the second substrate. and a parasitic element provided between an opening of the waveguide that is not in contact with the second substrate and the coupling element.

In addition, these generic or specific aspects may be realized by systems, devices, methods, integrated circuits, computer programs, or recording media. may be realized by any combination of

According to an embodiment of the present disclosure, it is possible to provide a high frequency module capable of widening the pass band of a signal.

Further advantages and advantages of an embodiment of the disclosure are apparent from the specification and drawings. Such advantages and/or advantages are provided by the several embodiments and features described in the specification and drawings, respectively, not necessarily all provided to obtain one or more of the same features. no.

1 is a cross-sectional view showing a schematic structure of a high frequency module according to an embodiment of the present disclosure; FIG. FIG. 1A is a top view showing the schematic structure of the high-frequency module viewed from the direction of arrow Y in FIG. 1A. Sectional view showing a schematic structure of a high-frequency module according to a comparative example FIG. 4 is a diagram showing passband characteristics of a high-frequency module according to an embodiment of the present disclosure; Sectional view showing a schematic structure of a high-frequency module according to a first modification of an embodiment of the present disclosure Sectional view showing a schematic structure of a high-frequency module according to a second modification of an embodiment of the present disclosure FIG. 5A is a top view showing the schematic structure of the high-frequency module viewed from the direction of arrow Y in FIG. 5A. FIG. 11 is a diagram showing passband characteristics of a high-frequency module according to a second modification of an embodiment of the present disclosure;

Preferred embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. In the present specification and drawings, constituent elements having substantially the same functions are denoted by the same reference numerals, thereby omitting redundant description.

A configuration example of a module that propagates high-frequency signals will be described.

Patent Document 1 describes, for example, a high-frequency package in which a high-frequency circuit (semiconductor element) is mounted with a wire ribbon, and a strip line provided on a substrate and a waveguide are electromagnetically coupled. there is

In the high-frequency package described in Patent Document 1, a high-frequency semiconductor element that performs signal processing of high-frequency signals is provided in a cavity formed by a dielectric substrate and a housing. A stripline is formed on one surface of the dielectric substrate. One end of the stripline and the high-frequency semiconductor element are connected by a wire ribbon. A shorting metal layer is provided at the other end of the stripline away from the stripline. A ground metal layer is provided on the other surface of the dielectric substrate. The ground metal layer is connected to the shorting metal layer through the through holes. A waveguide is connected to the same side of the dielectric substrate as the ground metal layer. Matching elements are provided in the openings where the waveguides connect. A strip line on one side of the dielectric substrate and a matching element on the other side of the dielectric substrate are arranged in close proximity.

In Patent Document 1, a strip line and a short-circuiting metal layer are provided on one surface of a dielectric substrate, and a matching element is provided on the other surface of the dielectric substrate. combine. Therefore, it is possible to suppress leakage of electric power from the resonance part at the connection point between the other surface of the dielectric substrate and the waveguide, and a low-loss high-frequency package can be realized.

Patent Document 2 describes a radar apparatus having a transmitting/receiving device substrate including a device for signal processing of high frequency signals and a multilayer resin substrate including a microstrip antenna element for radiating high frequency signals.

In the radar device described in Patent Document 2, a transmission/reception device substrate is mounted on the component mounting surface of the multilayer resin substrate via solder balls. A metal film including a transmission line for transmitting high-frequency signals is formed on the component mounting surface of the transmitting/receiving device substrate. The transmission line is electromagnetically coupled to the first waveguide formed on the multilayer resin substrate, and propagates through the first waveguide to the second waveguide. A high-frequency signal propagated through the second waveguide is propagated through the coupling slot to the waveguide-microstrip line converter and radiated from the microstrip antenna element.

Patent Document 2 employs a structure in which a first waveguide and a second waveguide are formed on a multilayer resin substrate, and a transmitting/receiving device substrate is mounted on the multilayer resin substrate via solder balls. With such a configuration, the line loss up to the microstrip antenna element arranged on the multilayer resin substrate can be reduced, so that the power supply loss can be reduced and unnecessary radiation from the microstrip line can be reduced.

However, in the high-frequency package of Patent Document 1, since the high-frequency semiconductor element and the strip line are connected with a wire ribbon, the connection loss increases in a high-frequency band exceeding 100 GHz. In addition, the inductance component of the wire ribbon narrows the passband of high-frequency signals.

Further, in the radar apparatus of Patent Document 2, the transmission/reception device substrate is composed of a semiconductor element or a package substrate including a semiconductor element, and the film thickness of the dielectric layer configured in the transmission/reception device substrate is from several microns to ten and several microns. thin. Therefore, when a high-frequency signal is propagated from the transmitting/receiving device substrate to the first waveguide of the multilayer resin substrate, the pass band becomes narrow.

In one embodiment of the present disclosure, a high-frequency module used in a wireless communication device, a radar device, or the like, in which a pass band of a signal passing between a waveguide and a package substrate including a circuit for performing signal processing in the module is set to It contributes to the provision of a high frequency module that can be widened.

(one embodiment)
FIG. 1A is a cross-sectional view showing a schematic structure of a high frequency module 100 according to Embodiment 1. FIG. FIG. 1B is a top view showing a schematic structure of the high-frequency module 100 viewed from the direction of arrow Y in FIG. 1A. A high-frequency module 100 shown in FIGS. 1A and 1B includes a fan-out package 1 , a dielectric substrate 9 , solder balls 8 connecting the fan-out package 1 and the dielectric substrate 9 , and conductors connecting to the dielectric substrate 9 . and a wave tube 13 . Note that FIG. 1A corresponds to an example of a cross section along line XX in FIG. 1B. Moreover, part of the configuration shown in FIG. 1A is omitted in FIG. 1B.

The fan-out package 1 includes, for example, a high frequency semiconductor chip 2, a sealing resin 3, and a rewiring layer 4.

In the fan-out package 1 , the periphery of the high frequency semiconductor chip 2 is molded with a sealing resin 3 . The rewiring layer 4 is formed in a semiconductor process on at least one surface of the high frequency semiconductor chip 2 molded with the sealing resin 3 .

The high-frequency semiconductor chip 2 performs, for example, signal processing of high-frequency signals (for example, signals in a frequency band equal to or higher than the millimeter wave band). For example, the high-frequency semiconductor chip 2 generates a high-frequency signal output from the high-frequency module 100 and outputs it to the rewiring layer 4 through vias. Further, for example, the high-frequency semiconductor chip 2 may perform signal processing of high-frequency signals input via the waveguide 13, the dielectric substrate 9, the rewiring layer 4, and the like.

An example in which the high-frequency module 100 outputs a high-frequency signal generated by the high-frequency semiconductor chip 2 will be described below, but the present disclosure is not limited to this. For example, in the high frequency module 100 , high frequency signals input from the waveguide 13 may be processed by the high frequency semiconductor chip 2 .

The rewiring layer 4 includes a first metal layer 5 and a second metal layer 6 . The second metal layer 6 is provided with coupling elements 7, for example.

The fan-out package 1 is mounted via solder balls 8 on, for example, a dielectric substrate 9 on which a power supply circuit and/or a control circuit or the like is mounted.

For example, a third metal layer 10 is formed on the surface of the dielectric substrate 9 facing the fan-out package 1 . A parasitic element 11 is provided on the third metal layer 10 .

The parasitic element 11 is formed, for example, at a position facing the coupling element 7 (see FIG. 1A). For example, as shown in FIG. 1B, the parasitic element 11 may overlap at least a portion of the coupling element 7 when the high-frequency module 100 is viewed from above.

The parasitic element 11 is provided between the opening of the waveguide 13 in contact with the dielectric substrate 9 and the coupling element 7 in FIG. 1A. However, the present disclosure is not limited to this. The parasitic element 11 may be provided, for example, between the opening of the waveguide 13 that is not in contact with the dielectric substrate 9 and the coupling element 7 .

The size of the parasitic element 11 is not particularly limited, but may be the same as the coupling element 7, larger than the coupling element 7, or smaller than the coupling element 7, for example. If the size of the parasitic element 11 is the same as or larger than that of the coupling element 7, the position of the parasitic element 11 may overlap with the coupling element 7 when viewed from above.

For example, a fourth metal layer 12 is formed on the surface of the dielectric substrate 9 opposite to the fan-out package 1 . A waveguide 13 is arranged in contact with the fourth metal layer 12 of the dielectric substrate 9 .

The waveguide 13 is, for example, a rectangular tube formed with metal walls. The waveguide 13 is connected to the fourth metal layer 12 of the dielectric substrate 9 so that the metal wall surrounds the parasitic element 11 when the high frequency module 100 is viewed from above, as shown in FIG. 1B. For example, as shown in FIG. 1B, the outer wall of the waveguide 13 surrounds the parasitic element 11 when the high frequency module 100 is viewed from above.

The position and number of solder balls 8 are not particularly limited. For example, the solder balls 8 are provided outside the opening of the waveguide 13 when the high frequency module 100 is viewed from above, as shown in FIG. 1B.

A high-frequency signal output from the high-frequency semiconductor chip 2 propagates through a transmission line (not shown) formed in the first metal layer 5 and/or the second metal layer 6 via the via 15, and reaches the second metal layer. It is radiated outside the fan-out package 1 by direct or electromagnetic coupling to a coupling element 7 formed in layer 6 .

The high-frequency signal radiated to the outside of the fan-out package 1 is electromagnetically coupled with the parasitic element 11 provided on the dielectric substrate 9, and further coupled with the waveguide 13 surrounding the parasitic element 11. , propagate in the waveguide 13 .

For example, the GND (Ground) of the dielectric substrate 9 and the GND of the waveguide 13 may be made common by using the fourth metal layer 12 as a ground conductor. Note that the fourth metal layer 12 may not be formed.

In the high-frequency module 100 shown in FIGS. 1A and 1B, a high-frequency signal radiated from the coupling element 7 is electromagnetically coupled with the parasitic element 11 .

Next, the characteristics of the passband will be explained. A comparative example of passband characteristics for the high-frequency module 100 shown in FIG. 1 will be given.

FIG. 2 is a cross-sectional view showing a schematic structure of a high frequency module 200 according to a comparative example. In addition, in FIG. 2, the same reference numerals are assigned to the same configurations as in FIGS. 1A and 1B, and the description thereof is omitted.

A high-frequency module 200 shown in FIG. 2 does not have a dielectric substrate 9 in comparison with the high-frequency module 100 . Therefore, in the high-frequency module 200 , the waveguide 13 is directly connected to the fan-out package 1 without the dielectric substrate 9 . The high-frequency signal radiated by the coupling element 7 is directly coupled to the waveguide 13 arranged so as to surround the coupling element 7 in a top view (not shown) of the high-frequency module 200, so that the inside of the waveguide 13 is Propagate.

Generally, in a configuration in which a high-frequency signal propagated through a transmission line is propagated through a waveguide, a cavity structure called a back-short structure is provided for a coupling element. A back-short structure is provided at a predetermined distance on the opposite side of the waveguide with respect to the coupling element. The back-short structure propagates a high-frequency signal to the waveguide by reflecting the signal radiated to the opposite side of the waveguide among the signals radiated from the coupling element.

For example, since the thickness of the rewiring layer 4 of the fan-out package 1 is as thin as several microns to ten and several microns, a back-short structure is formed on the opposite side of the waveguide 13 with respect to the coupling element 7 at a predetermined distance. difficult to set up. Therefore, a patch antenna is used for the coupling element 7 .

However, in the fan-out package 1 shown in FIG. 2, the coupling element 7 forming the patch antenna and the first metal layer 5 functioning as a ground conductor are arranged in close proximity. Since the width of the passband is proportional to the thickness of the substrate (for example, the distance between the coupling element 7 and the first metal layer 5), the width of the passband is narrowed.

On the other hand, in the high-frequency module 100 according to the present embodiment, as shown in FIGS. 1A and 1B, the parasitic element 11 is arranged on the dielectric substrate 9 so that the coupling element 7 and the parasitic element 11 are connected. are electromagnetically coupled, and the width of the passband as a patch antenna can be widened.

FIG. 3 is a diagram showing passband characteristics of the high-frequency module 100 according to the present embodiment. FIG. 3 shows the passband characteristics of the high-frequency module 100 (“with parasitic element” in FIG. 3) and the passband characteristics of the high-frequency module 200 in FIG. 2 (“without parasitic element” in FIG. 3). ) is shown. The passband characteristic indicates the simulation result of the passing loss of the signal propagated from the transmission line to the waveguide 13 . In FIG. 3, the horizontal axis indicates frequency, and the vertical axis indicates passage loss (unit: dB). The notation of passage loss on the vertical axis indicates that the larger the value, the larger the loss.

Note that in FIG. 3, the minimum value of the passage loss “without parasitic elements” is defined as 0 [dB], and the simulation results of “without parasitic elements” and “with parasitic elements” are standardized. It is

In the characteristics of “no parasitic element” in FIG. In the characteristic of "with feeding element", the 3 dB bandwidth of the passband is 35.6 GHz. Therefore, it is shown that the high-frequency module 100 can expand the width of the passband to approximately 1.7 times that of the high-frequency module 200 of the comparative example.

Further, by providing the parasitic element 11, the radiated electromagnetic field from the coupling element 7 can be guided toward the parasitic element 11 side, so that the directivity from the coupling element 7 to the waveguide 13 is increased, A negative passage loss is obtained in FIG. 3 because the loss in coupling can be reduced.

As described above, in this embodiment, the coupling element 7 provided on the first metal layer 5 of the fan-out package 1 and the parasitic element 11 provided on the dielectric substrate 9 on which the fan-out package 1 is mounted are combined. are electromagnetically coupled. According to this configuration, signal propagation between the transmission line provided in the rewiring layer 4 and the waveguide 13 connected to the dielectric substrate 9 can be made broadband. In addition, the transmission line provided in the redistribution layer 4 and the waveguide 13 connected to the dielectric substrate 9 can be propagated with low loss. A precision radar device can be realized.

In a high-frequency module in which fan-out package 1 is mounted on dielectric substrate 9 using solder balls 8 , sealing resin may be inserted (filled) between fan-out package 1 and dielectric substrate 9 . By inserting the sealing resin, it is possible to improve the mounting reliability of the configuration in which solder balls 8 are used for mounting.

Note that although an example in which one parasitic element 11 is provided has been described in the high-frequency module 100 illustrated in FIG. 1 , the present disclosure is not limited to this. For example, a plurality of parasitic elements 11 may be provided. As a first modified example of the present embodiment, a high-frequency module provided with two parasitic elements will be described.

(First modification of one embodiment)
FIG. 4 is a cross-sectional view showing a schematic structure of a high frequency module 300 according to a first modified example of the present embodiment. In addition, in FIG. 4, the same reference numerals are assigned to the same configurations as in FIGS. 1A and 1B, and the description thereof is omitted.

In the high frequency module 300 shown in FIG. 4, the second parasitic element 14 is provided on the surface of the dielectric substrate 9 with which the waveguide 13 is in contact.

The parasitic element 14 is formed at a position facing the parasitic element 11 and/or the coupling element 7, for example. For example, in a top view (not shown) of the high-frequency module 300 in FIG. 4 , the parasitic element 14 may overlap at least part of the coupling element 7 . Alternatively, the parasitic element 14 may overlap at least a portion of the parasitic element 11 in a top view of the high-frequency module 300 of FIG.

The size of the parasitic element 14 is not particularly limited. When the size of the parasitic element 11 is the same as or larger than that of the coupling element 7, the position of the parasitic element 11 may overlap with the coupling element 7 in plan view from above the paper surface of FIG. .

In addition, the size of the parasitic element 14 may be, for example, the same as that of the parasitic element 11 , larger than the parasitic element 11 , or smaller than the parasitic element 11 . When the size of the parasitic element 14 is the same as or larger than that of the parasitic element 11, the position of the parasitic element 14 overlaps with the parasitic element 11 in a plan view from above the paper surface of FIG. good too.

As shown in FIG. 4, by providing two parasitic elements (parasitic element 11 and parasitic element 14), the electromagnetic field radiated from the coupling element 7 can be concentrated in the waveguide 13, Passage loss can be reduced.

In the high-frequency module 300 of FIG. 4 , one parasitic element 14 may be provided on the surface of the dielectric substrate 9 with which the waveguide 13 is in contact by removing the parasitic element 11 .

Although the high-frequency module 300 of FIG. 4 shows an example in which there are two parasitic elements, the number of parasitic elements may be three or more.

For example, the dielectric substrate 9 may be configured as a multi-layer substrate, and a parasitic element may be arranged in each of a plurality of layers. When the dielectric substrate 9 is configured as a multilayer substrate, all layers of the multilayer substrate may be provided with parasitic elements, or some layers may not be provided with parasitic elements.

Also, the parasitic element 11 may have a size different from that of the coupling element 7 .

The resonance frequency of the coupling element 7 (sometimes referred to as “first resonance frequency”) is determined by the size (for example, the length of one side or the area) of the coupling element 7, and the resonance frequency of the parasitic element 11 is The frequency is determined by the size of the parasitic element 11 (for example, length of one side or area). For example, the parasitic element 11 has a size that resonates at a frequency different from the first resonance frequency (referred to as a “second resonance frequency”), thereby causing the parasitic element 11 to generate an electromagnetic field at the second resonance frequency. can be linked together. Therefore, the width of the passband can be made wider.

For example, when the second resonance frequency is higher than the first resonance frequency, in other words, when the parasitic element 11 is smaller than the coupling element 7, the width of the passband can be widened to the high frequency side. Further, when the second resonance frequency is lower than the first resonance frequency, in other words, when the parasitic element 11 is larger than the coupling element 7, the width of the passband can be widened to the low frequency side.

As shown in FIG. 4, when a plurality of parasitic elements (parasitic element 11 and parasitic element 14) are provided, each parasitic element may have a different size, or each The parasitic element may have a size different from that of the coupling element 7 . For example, a parasitic element provided at a position farther from the coupling element 7 may have a smaller size.

As described above, in the first modification of the present embodiment, the coupling element 7 provided on the first metal layer 5 of the fan-out package 1 and the dielectric substrate 9 on which the fan-out package 1 is mounted have A plurality of parasitic elements (for example, parasitic element 11 and parasitic element 14) are electromagnetically coupled. According to this configuration, signal propagation between the transmission line provided in the rewiring layer 4 and the waveguide 13 connected to the dielectric substrate 9 can be made broadband. In addition, the transmission line provided in the redistribution layer 4 and the waveguide 13 connected to the dielectric substrate 9 can be propagated with low loss. A precision radar device can be realized. Furthermore, in this configuration, by using a plurality of parasitic elements, the passband can be made wider as the number of parasitic elements increases. Moreover, since the electromagnetic field radiated from the coupling element 7 can be more strongly coupled to the waveguide 13, the passage loss can be reduced.

In the high-frequency module 100 and the high-frequency module 300 described above, the positions of the solder balls 8 for mounting the fan-out package 1 on the dielectric substrate 9 are not particularly limited. For example, as shown in Modification 2 of the present embodiment below, solder balls 8 may be provided at specific positions.

(Second modification of one embodiment)
FIG. 5A is a cross-sectional view showing a schematic structure of a high frequency module 400 according to a second modification of the embodiment. 5B is a top view showing a schematic structure of the high-frequency module 400 viewed from the direction of arrow Y in FIG. 5A. Note that FIG. 5A corresponds to an example of a cross section along line XX in FIG. 5B. Moreover, part of the configuration shown in FIG. 5A is omitted in FIG. 5B. In addition, in FIGS. 5A and 5B, the same reference numerals are given to the same configurations as in FIGS. 1A and 1B, and the description thereof is omitted.

A difference between the high-frequency module 400 shown in FIGS. 5A and 5B and the high-frequency module 100 shown in FIGS. 1A and 1B is that the positions of the solder balls 8 are different.

In the high frequency module 400 , the solder balls 8 are arranged directly below the metal walls forming the waveguide 13 . For example, in the top view shown in FIG. 5B, the solder balls 8 are provided at positions overlapping the metal walls forming the waveguide 13 (positions surrounding the opening of the waveguide 13).

The spacing of the solder balls 8 may be defined based on the wavelength of the signal feeding the coupling element 7 .

For example, adjacent solder balls 8 may be arranged at intervals of 1/4 or less with respect to the wavelength of the high frequency signal. For example, when the high-frequency signal is in the 300 GHz band, the wavelength λ=1 mm, so the spacing between the solder balls 8 may be 0.25 mm or less. The interval set to 1/4 or less of the wavelength corresponds to the minimum interval among the intervals between adjacent solder balls 8 . For example, in FIG. 5B, since the distance between the solder balls 8a and 8b is the minimum distance, it may be set to 1/4 or less of the wavelength. On the other hand, in FIG. 5B, the distance between the solder balls 8b and 8c is not the minimum distance, so it is not set to 1/4 or less of the wavelength. Here, the wavelength λ may be the wavelength in vacuum, or may be the effective wavelength according to the dielectric constant of the medium between the coupling element 7 and the waveguide 13 .

The space surrounded by the solder balls 8 between the fan-out package 1 of the high frequency module 400 and the dielectric substrate 9 can be considered as part of the waveguide. In other words, it can be considered that the waveguide 13 is extended to the rewiring layer 4 . Therefore, the parasitic element 11 is equivalent to being installed inside the waveguide, suppressing power leakage in the mounting portion (for example, the connection portion with the solder ball 8) of the fan-out package 1 and the dielectric substrate 9. and pass loss can be reduced.

Next, the characteristics of the passband will be explained.

FIG. 6 is a diagram showing passband characteristics of the high-frequency module 400 according to Modification 2 of the present embodiment. FIG. 6 shows the passband characteristics of the high-frequency module 400 (“with parasitic element” in FIG. 6) and the passband characteristics of the comparative high-frequency module 200 (“without parasitic element” in FIG. 6). shown. The passband characteristics indicate simulation results of the passing loss from the transmission line to the waveguide 13 . As in FIG. 3, the horizontal axis in FIG. 6 indicates frequency, and the vertical axis indicates passage loss (unit: dB). As in FIG. 3, the passing loss on the vertical axis indicates that the larger the value, the larger the loss.

In the characteristics "without parasitic element" in FIG. be. Therefore, the high-frequency module 400 according to Modification 2 of the present embodiment can broaden the width of the passband to approximately double that of the high-frequency module 200 of the comparative example.

In addition, since the smallest value of the characteristic "with parasitic element" in FIG. 6 is about 1.7 dB smaller than the smallest value of the characteristic "without parasitic element" A high-frequency module can reduce passage loss.

Further, by arranging the solder balls 8 so as to be in contact with the inner walls of the metal walls forming the waveguide 13 in the top view shown in FIG. can make the passing loss smaller.

As described above, in the second modification of the present embodiment, the coupling element 7 provided on the first metal layer 5 of the fan-out package 1 and the dielectric substrate 9 on which the fan-out package 1 is mounted are provided. The parasitic element 11 is electromagnetically coupled. In the second modification of the present embodiment, solder balls 8 connecting fan-out package 1 and dielectric substrate 9 are arranged along metal walls forming waveguide 13 . According to this configuration, signal propagation between the transmission line provided in the rewiring layer 4 and the waveguide 13 connected to the dielectric substrate 9 can be made broadband. In addition, the transmission line provided in the redistribution layer 4 and the waveguide 13 connected to the dielectric substrate 9 can be propagated with low loss. A precision radar device can be realized. Furthermore, in this configuration, the area surrounded by the solder balls 8 can be regarded as part of the waveguide 13, so that power leakage can be suppressed and passage loss can be reduced.

Further, in the second modification of the present embodiment, the transmission line provided in the rewiring layer 4 is arranged by arranging the solder balls 8 at intervals of 1/4 or less of the wavelength of the frequency used in the high frequency module 400. and the waveguide 13, the power leakage of the signal can be suppressed, and the passage loss can be reduced.

In addition, in the second modified example of the present embodiment, an example in which the high-frequency module 400 has one parasitic element 11 has been described, but the present disclosure is not limited to this. For example, the high frequency module 400 may have a plurality of parasitic elements as shown in the first modified example.

The high-frequency modules of the embodiments including the modifications described above are used, for example, in wireless communication devices and radar devices that operate in ultra-high frequency bands equal to or higher than the millimeter wave band. A wireless communication device using the high-frequency module of the above-described embodiment can achieve high communication speed. Also, the radar apparatus using the high-frequency module of the embodiment described above can improve the resolution.

In the above-described embodiments, the notation "... module" is replaced with other notation such as "... circuit (circuitry)," "... device," or "... unit." may be

Also, the notation “Fan Out Package” in the above-described embodiment may be replaced with other notation such as “Fan Out Wafer Level Package” or “FOWLP”.

If a technology for integrating circuits to replace LSIs emerges due to advances in semiconductor technology or another derived technology, it is of course possible to integrate the functional blocks using that technology. Application of biotechnology, etc. is possible.

The present disclosure can be implemented in any kind of apparatus, device, system (collectively communication equipment) with communication capabilities. Non-limiting examples of communication devices include telephones (mobile phones, smart phones, etc.), tablets, personal computers (PCs) (laptops, desktops, notebooks, etc.), cameras (digital still/video cameras, etc.). ), digital players (digital audio/video players, etc.), wearable devices (wearable cameras, smartwatches, tracking devices, etc.), game consoles, digital book readers, telehealth and telemedicine (remote health care/medicine prescription) devices, vehicles or mobile vehicles with communication capabilities (automobiles, planes, ships, etc.), and combinations of the various devices described above.

Communication equipment is not limited to portable or movable equipment, but any type of equipment, device or system that is non-portable or fixed, e.g. smart home devices (household appliances, lighting equipment, smart meters or measuring instruments, control panels, etc.), vending machines, and any other "Things" that can exist on the IoT (Internet of Things) network.

The communication includes data communication by a cellular system, a wireless LAN system, a communication satellite system, etc., as well as data communication by a combination of these systems.

Communication apparatus also includes devices such as controllers and sensors that are connected or coupled to communication devices that perform the communication functions described in this disclosure. Examples include controllers and sensors that generate control and data signals used by communication devices to perform the communication functions of the communication device.

Communication equipment also includes infrastructure equipment, such as base stations, access points, and any other equipment, device, or system that communicates with or controls the various equipment, not limited to those listed above. .

A high-frequency module according to the present disclosure includes a coupling element provided on a first substrate, a second substrate different from the first substrate, a waveguide disposed in contact with the second substrate, and the guide. a parasitic element provided between the opening of the wave tube that is not in contact with the second substrate and the coupling element.

In the high frequency module of the present disclosure, the size of the parasitic element is smaller than the size of the opening.

In the high frequency module of the present disclosure, the size of the parasitic element is different from the size of the coupling element.

In the high frequency module of the present disclosure, the parasitic element is provided on the second substrate.

In the high-frequency module of the present disclosure, each of the plurality of parasitic elements is provided on any layer of the second substrate having a plurality of layers.

In the high-frequency module of the present disclosure, the sizes of the plurality of parasitic elements become smaller with increasing distance from the coupling element.

The high-frequency module of the present disclosure has solder balls that connect the first substrate and the second substrate.

In the high-frequency module of the present disclosure, the solder ball is provided at a position surrounding the opening in a top view from the direction of the opening of the waveguide.

In the high frequency module of the present disclosure, the intervals between the plurality of solder balls are defined based on the wavelength of the signal fed to the coupling element.

A wireless communication device of the present disclosure includes the high-frequency module.

A radar device of the present disclosure includes the high-frequency module.

INDUSTRIAL APPLICABILITY The high-frequency module according to the present invention is effective as a module for use in radio communication devices, radar devices, etc. that operate in ultra-high frequency bands equal to or higher than the millimeter wave band.

REFERENCE SIGNS LIST 1 fan-out package 2 high-frequency semiconductor chip 3 sealing resin 4 rewiring layer 5 first metal layer 6 second metal layer 7 coupling element 8 solder ball 9 dielectric substrate 10 third metal layer 11, 14 parasitic element 12 fourth metal layer 13 waveguide 15 via 100, 200, 300, 400 high frequency module

Claims (9)

a coupling element provided on the first substrate;
a second substrate different from the first substrate;
a waveguide disposed in contact with the second substrate;
a plurality of parasitic elements provided between the opening of the waveguide not in contact with the second substrate and the coupling element;
with
Each of the plurality of parasitic elements is provided on any layer of the second substrate having a plurality of layers,
high frequency module. the size of the parasitic element is smaller than the size of the opening;
The high frequency module according to claim 1. The size of the parasitic element is different from the size of the coupling element,
The high frequency module according to claim 1. a coupling element provided on the first substrate;
a second substrate different from the first substrate;
a waveguide disposed in contact with the second substrate;
a plurality of parasitic elements provided between the opening of the waveguide not in contact with the second substrate and the coupling element;
with
The plurality of parasitic elements are provided on the second substrate,
The sizes of the plurality of parasitic elements are smaller the further away from the coupling element,
high frequency module. a coupling element provided on the first substrate;
a second substrate different from the first substrate;
a waveguide disposed in contact with the second substrate;
a parasitic element provided between the opening of the waveguide not in contact with the second substrate and the coupling element;
solder balls connecting the first substrate and the second substrate ;
has a
high frequency module. In a top view from the direction of the opening of the waveguide, the solder ball is provided at a position surrounding the opening,
The high frequency module according to claim 5 . the spacing between the plurality of solder balls is defined based on the wavelength of the signal fed to the coupling element;
The high frequency module according to claim 5 . including the high-frequency module according to any one of claims 1 to 7 ,
wireless communication device. including the high-frequency module according to any one of claims 1 to 7 ,
radar equipment.

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