JP7235417B2 - 排ガス浄化装置 - Google Patents
排ガス浄化装置 Download PDFInfo
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Description
排ガスが流入する上流端及び前記排ガスが排出される下流端を有し、前記上流端と前記下流端の間の長さがLsである基材と、
前記上流端と前記上流端から前記下流端に向かって第一距離Laを隔てた第一位置との間の第一領域において、前記基材に接して形成された、パラジウム粒子を含む第一触媒層と、
前記下流端と前記下流端から前記上流端に向かって第二距離Lbを隔てた第二位置との間の第二領域において、前記基材に接して形成された、ロジウム粒子を含む第二触媒層と、
前記上流端と前記上流端から前記下流端に向かって第三距離Lcを隔てた第三位置との間の第三領域において、少なくとも前記第一触媒層に接して形成された、ロジウム粒子を含む第三触媒層と、
を備え、
前記第二触媒層及び前記第三触媒層に含まれる前記ロジウム粒子の粒径分布の平均が1.0~2.0nmであり且つ標準偏差が0.8nm以下である、排ガス浄化装置が提供される。
基材10の形状は特に限定されないが、例えば、基材10は、図2に示すように、枠部12と、枠部12の内側の空間を仕切って複数のセル14を画成する隔壁16から構成されてよい。枠部12と隔壁16は一体的に形成されていてよい。枠部12は、円筒状、楕円筒状、多角筒状等の任意の形状であってよい。隔壁16は、基材10の第一端(第一端面)Iと第二端(第二端面)Jの間に延設され、第一端Iと第二端Jの間で延伸する複数のセル14を画成する。各セル14の断面形状は、正方形、平行四辺形、長方形、台形などの矩形、三角形、その他の多角形(例えば、六角形、八角形)、円形等の任意の形状であってよい。
第一触媒層20は、上流端Iと、上流端Iから下流端Jに向かって(すなわち、排ガスの流れ方向に)第一距離Laを隔てた第一位置Pとの間の第一領域Xにおいて、基材10に接して形成される。第一距離Laは、基材10の全長Lsの15~35%であってよい。
第二触媒層30は、下流端Jと下流端Jから上流端Iに向かって(すなわち、排ガスの流れ方向と反対の方向に)第二距離Lbを隔てた第二位置Qとの間の第二領域Yにおいて、基材10に接して形成される。第二距離Lbは、基材10の全長Lsの40~65%であってよい。また、基材の長さLs、第一距離La、及び第二距離Lbは、La+Lb<Lsを満たしてよい。それにより、後述する実施例で示すように、排ガス浄化装置100は、高いNOx浄化率及び高いTHC浄化率を有することができる。
a)反応場のクリアランスが所定の範囲に設定された反応器中で、Rh化合物の酸性溶液と、塩基性溶液とを反応させる方法(方法1)、及び
b)Rh化合物の酸性溶液と、塩基性溶液とを混合して反応させた後、高速ミキサー中で撹拌処理する方法(方法2)。
第三触媒層40は、上流端Iと上流端Iから下流端Jに向かって(すなわち、排ガスの流れ方向に)第三距離Lcを隔てた第三位置Rとの間の第三領域Zにおいて、少なくとも第一触媒層20に接して形成される。第三距離Lcは、基材10の全長Lsの40~70%であってよい。また、第一距離Laと第三距離Lcは、La<Lcを満たしてよい。すなわち、第一触媒層20が形成された第一領域Xは、第三触媒層40が形成された第三領域Zに包含されてよい。さらに、基材の長さLs、第二距離Lb、及び第三距離Lcは、Lb+Lc>Lsを満たしてよい。すなわち、第二触媒層30が形成された第二領域Yと第三触媒層40が形成された第三領域Zは重複してよい。それにより排ガス浄化装置100が高い排ガス浄化性能を有することができる。
a)基材(ハニカム基材)
材質:コージェライト
容積:875cc
隔壁の厚さ:2mil(50.8μm)
セル密度:1平方インチ当たり600個
セル断面形状:六角形
La2O3複合化Al2O3(La2O3:1wt%~10wt%)
ACZ(Al2O3-CeO2-ZrO2)複合酸化物(CeO2:15~30wt%)に、Nd2O3、La2O3、Y2O3を微量添加し、高耐熱化処理を施したもの
CZ(CeO2-ZrO2)複合酸化物(CeO2:40wt%、ZrO2:50wt%、La2O3:5wt%、Y2O3:5wt%)
CZ(CeO2-ZrO2)複合酸化物(CeO2:20wt%、ZrO2:70wt%、La2O3:5wt%、Y2O3:5wt%)
硝酸パラジウム
硝酸ロジウム
以下のようにして調製した、Rh粒子前駆体分散液
50mLのイオン交換水に0.2gの硝酸ロジウム(III)を溶解させ、硝酸ロジウム(RN)水溶液(pH1.0)を調製した。また、濃度175g/Lの水酸化テトラエチルアンモニウム(TEAH)水溶液(pH14)を用意した。クリアランス調節部材として2枚の平板を有する反応器(マイクロリアクター)を用いて、RN水溶液とTEAH水溶液を反応させた。具体的には、クリアランスを10μmに設定した反応場に、RN水溶液とTEAH水溶液を、TEAH:RN=18:1のモル比で導入して反応させて。Rh粒子前駆体分散液を調製した。得られた分散液のpHは14であった。また、動的光散乱法(DLS)により求めた、分散液中のRh粒子前駆体のメジアン径(D50)は、2.0nmであった。
硫酸バリウム
50mLのイオン交換水50mLに0.2gの材料6を溶解させ、硝酸ロジウム水溶液(pH1.0)を調製した。アルミナの質量を基準とするRhの質量の割合が0.5%となるように、硝酸ロジウム水溶液とアルミナとを接触させた後、焼成した。それにより、Rh粒子をアルミナに担持した。
アルミナの質量を基準とするRhの質量の割合が0.5%となるように、材料7とアルミナとを接触させた後、焼成した。それにより、Rh粒子をアルミナに担持した。
実施例1~5
蒸留水を撹拌しながら、材料1、材料3、材料5、材料8、及びAl2O3系バインダーを加え、懸濁したスラリー1を調製した。次に、調製したスラリー1を基材の一端(上流端)から流し込み、ブロアーで不要分を吹き払った。それにより、基材の一端と、基材の一端から基材の他端(下流端)に向かって基材全長の35%の長さの距離を隔てた第一位置との間の第一領域において、基材の隔壁がスラリー1でコーティングされた。内部を120℃に保った乾燥機に基材を2時間置き、スラリー1中の水を蒸発させ、次いで、電気炉で基材を500℃で2時間焼成した。それにより、第一触媒層を形成した。
第二位置を、基材の他端(下流端)から基材の一端(上流端)に向かって基材全長の80%の長さの距離を隔てた位置としたこと以外は実施例3と同様にして、排ガス浄化装置を作製した。
第二触媒層及び第三触媒層の形成において、材料7の代わりに材料6を用いたこと、並びに、第二触媒層及び第三触媒層のそれぞれにおいて、材料6に由来するRhの含有量を表1に記載の通りとしたこと以外は実施例1と同様にして、排ガス浄化装置を作製した。
実施例1~6及び比較例1~3の排ガス浄化装置を、それぞれ、V型8気筒エンジンの排気系に接続し、該エンジンにストイキ(空燃比A/F=14.6)及び酸素過剰(リーン:A/F>14.6)の混合気を、時間比3:1の一定の周期で交互に切り替えて繰り返し流入させ、排ガス浄化装置の床温を950℃に50時間にわたって維持した。それにより、排ガス浄化装置をエージング処理した。
Claims (5)
- 排ガス浄化装置であって、
排ガスが流入する上流端及び前記排ガスが排出される下流端を有し、前記上流端と前記下流端の間の長さがLsである基材と、
前記上流端と前記上流端から前記下流端に向かって第一距離Laを隔てた第一位置との間の第一領域において、前記基材に接して形成された、パラジウム粒子を含む第一触媒層と、
前記下流端と前記下流端から前記上流端に向かって第二距離Lbを隔てた第二位置との間の第二領域において、前記基材に接して形成された、ロジウム粒子を含む第二触媒層と、
前記上流端と前記上流端から前記下流端に向かって第三距離Lcを隔てた第三位置との間の第三領域において、少なくとも前記第一触媒層に接して形成された、ロジウム粒子を含む第三触媒層と、
を備え、
前記第二触媒層及び前記第三触媒層に含まれる前記ロジウム粒子の粒径分布の平均が1.0~2.0nmであり且つ標準偏差が0.8nm以下である、排ガス浄化装置。 - 前記基材の長さLs、前記第一距離La、及び前記第二距離Lbが、La+Lb<Lsを満たす、請求項1に記載の排ガス浄化装置。
- 前記第二触媒層及び前記第三触媒層に含まれる前記ロジウム粒子の総重量を基準とする、前記第三触媒層に含まれる前記ロジウム粒子の割合が、0%超50%未満である、請求項1又は2に記載の排ガス浄化装置。
- 前記第二触媒層及び前記第三触媒層に含まれる前記ロジウム粒子の総重量を基準とする、前記第三触媒層に含まれる前記ロジウム粒子の割合が、10%超である、請求項3に記載の排ガス浄化装置。
- 前記第二触媒層及び前記第三触媒層に含まれる前記ロジウム粒子の総重量を基準とする、前記第三触媒層に含まれる前記ロジウム粒子の割合が、20%以上である、請求項3に記載の排ガス浄化装置。
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