JP7453020B2 - Substrate processing method - Google Patents

Description

The technology disclosed in this specification relates to a substrate processing method. Substrates to be processed include, for example, semiconductor substrates, substrates for liquid crystal display devices, substrates for flat panel displays (FPDs) such as organic EL (electroluminescence) display devices, substrates for optical disks, substrates for magnetic disks, and substrates for magneto-optical disks. These include substrates, photomask substrates, ceramic substrates, solar cell substrates, and the like.

2. Description of the Related Art Conventionally, in the manufacturing process of semiconductor substrates (hereinafter simply referred to as "substrates"), various processes have been performed on the substrates using substrate processing apparatuses. The process includes an etching process that removes the top surface of the substrate.

Patent No. 6064875

In the above etching process, various etching profiles are required. For example, there are cases where an etching profile is required that offsets the non-uniformity of etching in the previous process.

In this case, it is conceivable to process the substrate while canceling out the non-uniformity of etching by, for example, performing an etching process in which the etching profile differs greatly between the central part and the peripheral part of the substrate.

The technology disclosed in this specification was developed in view of the problems described above, and is a technology for increasing the degree of freedom of etching profiles in substrate processing.

A first aspect of the technology related to the substrate processing method disclosed in the present specification includes a step of rotating a substrate held by a substrate holder, and a step of rotating a substrate using a central nozzle at the center of the rotating substrate. a step of discharging a first processing liquid, and a step of discharging a second processing liquid using a peripheral nozzle to a peripheral portion of the rotating substrate surrounding the central portion in plan view; The peripheral nozzle discharges the second processing liquid along the forward direction of rotation of the substrate from a direction inclined with respect to the main surface of the substrate, and the peripheral nozzle is configured to discharge the second processing liquid along the forward direction of rotation of the substrate , and to connect the center of the substrate and the center nozzle in plan view. from the position of the line connecting the center nozzle and the center of the substrate in the forward direction of rotation of the substrate on the opposite side of the center nozzle to the center of the substrate. The peripheral nozzle discharges the second processing liquid to a position between the line connecting the center nozzle and the peripheral edge of the substrate on the same side as the center nozzle with respect to the center of the substrate .

A second aspect of the technology disclosed herein is related to the first aspect, and the step of discharging the first treatment liquid includes, while discharging the first treatment liquid from the central nozzle, This is a step of moving the central nozzle from the center of the substrate in the radial direction of the substrate .

A third aspect of the technology disclosed in the present specification is related to the first or second aspect, and the peripheral nozzle is arranged so that after the liquid film of the first processing liquid is formed on the central part of the substrate, , discharging the second processing liquid.

A fourth aspect of the technology disclosed in the present specification is related to any one of the first to third aspects, and the first treatment liquid and the second treatment liquid are different types of treatment. It is a liquid.

According to the first to fifth aspects of the technology disclosed in this specification, it is possible to increase the degree of freedom in etching profiles in substrate processing.

In addition, objects, features, aspects, and advantages related to the technology disclosed herein will become more apparent from the detailed description and accompanying drawings set forth below.

FIG. 1 is a plan view schematically showing an example of the configuration of a substrate processing apparatus according to an embodiment. 1 is a diagram conceptually showing an example of the configuration of a control device of a substrate processing apparatus. FIG. 2 is a side view schematically showing an example of a processing unit and its related configuration in a substrate processing apparatus according to an embodiment. FIG. 3 is a side view showing an example of the positional relationship between a peripheral nozzle and a substrate. FIG. 3 is a plan view showing an example of the positional relationship between a center nozzle and a peripheral nozzle on the upper surface of a substrate. 2 is a flowchart showing operations in a processing unit among operations of the substrate processing apparatus. FIG. 3 is a plan view showing an example of the positional relationship between a center nozzle and a peripheral nozzle on the upper surface of a substrate. FIG. 3 is a plan view showing an example of the positional relationship between a center nozzle and a peripheral nozzle on the upper surface of a substrate. FIG. 7 is a plan view showing an example of the liquid film width of the processing liquid discharged from the peripheral nozzle.

Embodiments will be described below with reference to the accompanying drawings. In the following embodiments, detailed features and the like are shown for technical explanation, but these are merely examples, and not all of them are necessarily essential features for the embodiments to be implemented.

Note that the drawings are shown schematically, and for convenience of explanation, structures are omitted or simplified as appropriate in the drawings. Further, the mutual relationship between the sizes and positions of the structures shown in different drawings is not necessarily described accurately and may be changed as appropriate. Further, even in drawings such as plan views that are not cross-sectional views, hatching may be added to facilitate understanding of the content of the embodiments.

In addition, in the following description, similar components are shown with the same reference numerals, and their names and functions are also the same. Therefore, detailed descriptions thereof may be omitted to avoid duplication.

In addition, in the description below, when a component is described as "comprising," "includes," or "has," unless otherwise specified, it is an exclusive term that excludes the presence of other components. It's not an expression.

In addition, in the description below, even if ordinal numbers such as "first" or "second" are used, these terms may not be used to facilitate understanding of the content of the embodiments. They are used for convenience and are not limited to the order that can occur based on these ordinal numbers.

In addition, in the description below, expressions indicating relative or absolute positional relationships, such as "in one direction", "along one direction", "parallel", "orthogonal", "centered", Unless otherwise specified, terms such as "concentric" or "coaxial" include cases in which the positional relationship is strictly indicated, and cases in which the angle or distance is displaced within a range that allows tolerance or the same degree of function to be obtained. .

In addition, in the explanations below, expressions that indicate equal states, such as "same", "equal", "uniform", or "homogeneous", do not mean strictly equal states, unless otherwise specified. This shall include cases in which there is a difference in tolerance or in the range in which the same level of function can be obtained.

In addition, in the descriptions below, specific positions or directions such as "top", "bottom", "left", "right", "side", "bottom", "front" or "back" are meant. However, these terms are used for convenience to make it easier to understand the content of the embodiments, and the positions and directions when actually implemented are different from each other. It is unrelated.

In addition, in the explanations below, when "the top surface of..." or "the bottom surface of..." is stated, in addition to the top surface itself or the bottom surface of the component in question, the top surface of the component in question Alternatively, it also includes a state in which other components are formed on the lower surface. That is, for example, when it is described as "B provided on the upper surface of A", this does not preclude the presence of another component "C" between A and B.

<Embodiment>
A substrate processing apparatus and a substrate processing method according to this embodiment will be described below.

<About the configuration of the substrate processing equipment>
FIG. 1 is a plan view schematically showing an example of the configuration of a substrate processing apparatus 1 according to the first embodiment. As an example is shown in FIG. 1, the substrate processing apparatus 1 includes a carrier mounting section 3, an indexer robot IR, a center robot CR, a control device 9 (controller), and at least one processing unit 7 (FIG. (4 processing units). The plurality of processing units 7 are for processing substrates W (wafers).

The substrate processing apparatus 1 is a single-wafer type apparatus that can be used for substrate processing, and is, for example, a wet etching apparatus. The substrate processing apparatus 1 has a chamber 80 . By controlling the atmosphere within the chamber 80, substrate processing can be performed in a desired atmosphere. The control device 9 can control the operation of each part provided in the substrate processing apparatus 1. Each carrier CA is a container that accommodates a substrate W. The carrier mounting section 3 is a mechanism for holding a plurality of carriers CA. The indexer robot IR can transport the substrate W between the carrier platform 3 and the substrate platform PS. The central robot CR can transport a substrate W from one of the substrate platform PS and at least one processing unit 7 to the other one. With the above configuration, the indexer robot IR, the substrate platform PS, and the center robot CR function as a transport mechanism that transports the substrate W between each of the processing units 7 and the carrier platform 3.

The unprocessed substrate W is taken out from the carrier CA by the indexer robot IR and delivered to the center robot CR via the substrate platform PS. The central robot CR carries this unprocessed substrate W into the processing unit 7. The processing unit 7 processes the substrate W. The processed substrate W is taken out from the processing unit 7 by the center robot CR, passes through other processing units 7 as necessary, and then is delivered to the indexer robot IR via the substrate platform PS. The indexer robot IR carries the processed substrate W into the carrier CA. As described above, the processing on the substrate W is performed.

<About the control device>
FIG. 2 is a diagram conceptually showing an example of the configuration of the control device 9 of the substrate processing apparatus 1. As shown in FIG. The control device 9 is communicably connected to the indexer robot IR, the center robot CR, and the processing unit 7.

The control device 9 includes a control section 90 that controls the operation of each operating section in the indexer robot IR, the center robot CR, and the processing unit 7. Further, the control device 9 may include a detection section 91. The detection unit 91 detects set values for substrate processing performed by the processing unit 7 by referring to a processing recipe for the substrate W stored in a storage medium to be described later. Further, the detection unit 91 detects a setting value in the substrate processing performed by the processing unit 7 by performing image analysis based on an image captured by a camera, which will be described later. In this case, the control section 90 can control the operation of each operation section in the processing unit 7 while referring to the setting value detected by the detection section 91.

The control device 9 includes a central processing unit (CPU) that executes various processes, a random access memory (RAM) that serves as a work area for arithmetic processing, or a fixed disk. This is realized by a storage medium, etc. The storage medium stores various types of information in advance. The storage medium stores, for example, information regarding the operating conditions of the indexer robot IR, center robot CR, and processing unit 7. The information regarding the operating conditions of the processing unit 7 is, for example, a processing recipe (processing program) for processing the substrate W. The storage medium stores information for identifying each substrate W, for example.

<About the processing unit>
FIG. 3 is a side view schematically showing an example of the processing unit 7 and its related configuration in the substrate processing apparatus 1 according to the present embodiment.

The substrate processing apparatus 1 includes a spin chuck 10 that rotates the substrate W around a vertical rotation axis Z1 passing through the center of the substrate W while holding the substrate W in a substantially horizontal position, and a spin chuck 10 that rotates the substrate W around a vertical rotation axis Z1 passing through the center of the substrate W. A central nozzle 20 that discharges the processing liquid 120 to the central nozzle 20, a processing liquid supply source 29 that supplies the processing liquid 120 to the central nozzle 20, and a supply and stop of the processing liquid 120 from the processing liquid supply source 29 to the central nozzle 20. The switching valve 25, the nozzle arm 22 with the center nozzle 20 attached to the end, and the main part of the substrate W (i.e., the parts other than the center part surrounding the center part of the substrate W in a plan view). a peripheral nozzle 50 that discharges the processing liquid 150 to the peripheral nozzle 50; a processing liquid supply source 59 that supplies the processing liquid 150 to the peripheral nozzle 50; and supply and stop of the processing liquid 150 from the processing liquid supply source 59 to the peripheral nozzle 50. a nozzle arm 52 with a peripheral nozzle 50 attached to its end; a cylindrical processing cup 12 surrounding the spin chuck 10 around the rotation axis Z1 of the substrate W; A camera 70, which is, for example, a CMOS camera or a CCD camera, is provided to take images from above.

Here, in FIG. 3, the central nozzle 20 is shown as discharging the processing liquid 120 in a direction perpendicular to the upper surface of the substrate W, but the discharge direction of the central nozzle 20 is as shown in FIG. Not limited. Further, the peripheral edge of the substrate W refers to a range of about 10 mm from the outer periphery of the substrate W, for example.

Further, the treatment liquid 120 or the treatment liquid 150 may be, for example, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, aqueous ammonia, pure water (DIW), hydrogen peroxide, organic acids (for example, citric acid, oxalic acid, etc.). ), an organic alkali (eg, tetramethylammonium hydroxide (TMAH), etc.), a surfactant, and a corrosion inhibitor. Examples of chemical solutions that are a mixture of these are a mixed solution of sulfuric acid and hydrogen peroxide (SPM), a mixed solution of ammonia and hydrogen peroxide (SC1), and hydrofluoric acid (HF) diluted with pure water. Examples include dilute hydrofluoric acid (DHF).

Further, the processing liquid 120 supplied from the processing liquid supply source 29 and the processing liquid 150 supplied from the processing liquid supply source 59 may be the same type of processing liquid or may be different types of processing liquid. good.

The spin chuck 10 includes a disk-shaped spin base 10A facing the lower surface of the substrate W in a substantially horizontal position, a plurality of chuck pins 10E that clamp the substrate W from the outer periphery of the spin base 10A, and a central portion of the spin base 10A. A spin motor 10D is provided, which rotates the substrate W held on the spin base 10A by rotating the rotation shaft 10C. The plurality of chuck pins 10E are arranged along the circumference of the circular substrate W at equal intervals. Note that instead of the spin chuck 10, a suction type chuck that vacuum-chucks the lower surface of the substrate W may be used.

The nozzle arm 22 includes an arm portion 22A, a shaft body 22B, and an actuator 22C. The actuator 22C adjusts the angle of the shaft body 22B around the axis. One end of the arm portion 22A is fixed to the shaft body 22B, and the other end of the arm portion 22A is arranged away from the axis of the shaft body 22B. Further, the central nozzle 20 is attached to the other end of the arm portion 22A. The central nozzle 20 is configured to be swingable in the radial direction of the substrate W by adjusting the angle of the shaft body 22B by the actuator 22C. Note that the moving direction of the central nozzle 20 due to the swing only needs to have a component in the radial direction of the substrate W, and does not need to be strictly parallel to the radial direction of the substrate W.

The nozzle arm 52 includes an arm portion 52A and a base portion 52B. One end of the arm portion 52A is fixed to the base portion 52B, and the peripheral nozzle 50 is attached to the other end of the arm portion 52A. The arrangement position of the nozzle arm 52 can be changed in the circumferential direction of the processing cup 12. In addition, in FIG. 3, the nozzle arm 52 is shown as fixing the peripheral nozzle 50 in the arranged position, but the nozzle arm 52, like the nozzle arm 22, can swing the peripheral nozzle 50. It may also be retained.

Further, in the above example, the number of nozzles in the processing unit 7 is two, but the nozzle for discharging the processing liquid to the center or peripheral portion of the substrate W may be further provided.

FIG. 4 is a side view showing an example of the positional relationship between the peripheral nozzle 50 and the substrate W. As an example is shown in FIG. 4, the discharge direction X1 of the processing liquid discharged from the peripheral nozzle 50 is inclined at an acute angle θ with respect to the upper surface of the substrate W.

By discharging the processing liquid at such an angle with respect to the substrate W, the discharging processing liquid is applied to the substrate W, for example, compared to a case where the discharging direction X1 is perpendicular to the upper surface of the substrate W. The amount of bounce off the top surface can be reduced.

FIG. 5 is a plan view showing an example of the positional relationship between the center nozzle 20 and the peripheral nozzle 50 on the upper surface of the substrate W. As an example is shown in FIG. 5, the central nozzle 20 is swingable along a path Y1 around the shaft 22B. On the other hand, the peripheral nozzle 50 can be placed at any position in the circumferential direction of the substrate W.

Here, the discharge direction X1 of the processing liquid discharged from the peripheral nozzle 50 is preferably a plane parallel to the rotational direction of the substrate W at the position where the processing liquid is discharged (that is, the direction in contact with the outer periphery of the substrate W at the position). Parallel in vision. When the ejection direction X1 is such a direction, the processing liquid is ejected along the forward direction of rotation of the substrate W, so that rebound of the processing liquid on the substrate W can be suppressed. In addition, when the discharge direction This prevents it from being repelled by the pin 10E and scattering.

<About the operation of the substrate processing equipment>
Next, an example of the operation of the substrate processing apparatus 1 will be described with reference to FIG. 6. Note that FIG. 6 is a flowchart showing the operation in the processing unit among the operations of the substrate processing apparatus.

The indexer robot IR transports the substrate W from the carrier CA on the carrier platform 3 to the substrate platform PS. The central robot CR transports the substrate W from the substrate platform PS to one processing unit 7. The processing unit 7 processes the substrate W. The central robot CR transports the substrate W from the processing unit 7 to the substrate platform PS. The indexer robot IR transports the substrate W from the substrate platform PS to the carrier CA on the carrier platform 3.

As for substrate processing in the processing unit 7, first, a predetermined chemical solution is performed by supplying a chemical solution to the upper surface of the substrate W (step ST01 in FIG. 6). Thereafter, a rinsing process is performed by supplying pure water (DIW) or the like to the upper surface of the substrate W (step ST02 in FIG. 6). Further, the substrate W is rotated at high speed to shake off the pure water, thereby drying the substrate W (step ST03 in FIG. 6).

Among the substrate treatments described above, in the chemical liquid treatment, a predetermined treatment liquid is discharged from the center nozzle 20 and the peripheral nozzle 50 onto the upper surface of the substrate W which is being rotated and held by the spin chuck 10 . The type, discharge amount, concentration, temperature, discharge timing, etc. of the processing liquid discharged from the central nozzle 20 and the peripheral nozzle 50 are controlled by the control unit 90 in the control device 9 based on the processing recipe stored in the storage medium. Ru.

For example, the same type of processing liquid (SPM, etc.) is ejected from the center nozzle 20 and the peripheral nozzle 50 at the same or different timings. At this time, by making the concentration or temperature of the processing liquid discharged from the central nozzle 20 and the peripheral nozzle 50 different, the etching rate can be made different between the central part and the peripheral part of the substrate W. For example, even if it is known from the processing recipe that the etching rate is uneven between the central part and the peripheral part of the substrate W by the previous process (dry etching process, etc.), in this process Unevenness can be offset.

Further, for example, different types of processing liquids (such as a combination of SPM and pure water) are ejected from the center nozzle 20 and the peripheral nozzle 50 at the same or different timings. In this way, the etching rate can be made to be significantly different between the central part and the peripheral part of the substrate W, so for example, the central part and the peripheral part of the substrate W can be Even if it is known from the processing recipe that the etching rate is non-uniform, the non-uniformity can be offset in this step.

In addition, the center nozzle 20 when performing substrate processing may be fixed above the center of the substrate W, or may be swung in the radial direction of the substrate W by adjusting the angle of the shaft body 22B by the actuator 22C. Good too.

Further, the timing at which the processing liquid is ejected from the peripheral nozzle 50 is preferably after the processing liquid ejected from the center nozzle 20 forms a liquid film on the central portion of the upper surface of the substrate W. In such a state, the center part of the top surface of the substrate W is less likely to be affected by the processing liquid discharged from the peripheral nozzle 50, thereby suppressing defects in the center part of the substrate W caused by the action of the processing liquid. can do.

<About the processing liquid discharge position by the peripheral nozzle>
Next, the discharge position of the processing liquid by the peripheral nozzle 50 will be described below. As described above, the peripheral nozzle 50 can be placed at any position in the circumferential direction of the substrate W, but when the processing liquid discharged from the central nozzle 20 spreads over the upper surface of the substrate W, the peripheral nozzle 50 It is desirable that the peripheral nozzle 50 be arranged so that the processing liquid is ejected from the peripheral nozzle 50 at a location where the liquid film formed by the processing liquid ejected from the peripheral nozzle 20 becomes relatively thin.

FIG. 7 is a plan view showing an example of the positional relationship between the center nozzle 20 and the peripheral nozzle 50 on the upper surface of the substrate W.

When the central nozzle 20 is arranged at the position shown in FIG. 7, the processing liquid discharged from the central nozzle 20 spreads in the direction of the rotation direction R1 of the substrate W to form a liquid film. At this time, the processing liquid discharged from the central nozzle 20 is gradually flowed to the periphery of the substrate W by the centrifugal force caused by the rotation of the substrate W, and as it flows down from the outer periphery of the substrate W, the liquid film on the upper surface of the substrate W becomes thinner. .

Then, the peripheral nozzle 50 is located at the peripheral edge of the substrate W on the opposite side of the center nozzle 20 with respect to the center position CP of the straight line D1 connecting the center nozzle 20 and the center position CP of the substrate W (i.e., the center nozzle It is desirable that the processing liquid be disposed so as to eject the processing liquid to a position further in the rotational direction R1 than the peripheral edge of the substrate W at a position half a circle in the rotational direction R1 from the position 20.

In FIG. 7, the peripheral nozzle 50 is arranged at the position described above, so that the processing liquid discharged from the peripheral nozzle 50 has a liquid film formed by the processing liquid discharged from the central nozzle 20 relative to the peripheral nozzle 50. The liquid will be ejected to the area where it becomes thinner. In this case, the processing liquid ejected from the peripheral nozzle 50 is less likely to be interfered with by the processing liquid ejected from the center nozzle 20, so that the processing liquid ejected from the peripheral nozzle 50 reaches the upper surface of the substrate W. It becomes easier to act on the upper surface of the Therefore, the processing action of the processing liquid discharged from the peripheral nozzle 50 is enhanced. For example, even when processing a substrate in which the etching rate is greatly different between the central part and the peripheral part of the substrate W, the processing liquid discharged from the central nozzle 20 is Since interference between the processing liquid applied and the processing liquid discharged from the peripheral nozzle 50 is suppressed, it becomes easier to achieve a desired etching rate.

FIG. 8 is a plan view showing an example of the positional relationship between the center nozzle 20 and the peripheral nozzle 50 on the upper surface of the substrate W.

Even when the central nozzle 20 is arranged at the position shown in FIG. 8, the processing liquid discharged from the central nozzle 20 spreads in the rotational direction R1 of the substrate W to form a liquid film. At this time, the processing liquid discharged from the central nozzle 20 is gradually flowed to the periphery of the substrate W by the centrifugal force caused by the rotation of the substrate W, and as it flows down from the outer periphery of the substrate W, the liquid film on the upper surface of the substrate W becomes thinner. .

Then, the peripheral nozzle 50 is located at the peripheral edge of the substrate W on the opposite side of the center nozzle 20 with respect to the center position CP of the straight line D2 connecting the center nozzle 20 and the center position CP of the substrate W (i.e., the center nozzle It is desirable that the processing liquid be disposed so as to eject the processing liquid to a position further in the rotational direction R1 than the peripheral edge of the substrate W at a position half a circle in the rotational direction R1 from the position 20.

<About controlling the liquid film width of the processing liquid using the peripheral nozzle>
FIG. 9 is a plan view showing an example of the liquid film width W1 of the processing liquid 150 discharged from the peripheral nozzle 50. Note that the liquid film width W1 of the processing liquid 150, an example of which is shown in FIG. 9, is merely an example, including the ratio of the liquid film width W1 to the entire substrate W.

As an example is shown in FIG. 9, the processing liquid 150 discharged from the peripheral nozzle 50 spreads in the rotational direction R1 of the substrate W, and also spreads inside and outside the substrate W in the radial direction. Here, the width of the liquid film formed by spreading the processing liquid 150 discharged from the peripheral nozzle 50 in the radial direction of the substrate W is defined as the liquid film width W1.

The liquid film width W1 can be controlled by any of the following methods or a combination thereof. Note that this control is performed by the control device 9.

As a first method, first, the above liquid film formed on the upper surface of the substrate W is imaged using the camera 70 (see FIG. 3). The image data of the image captured by the camera 70 is then input to the detection unit 91 (see FIG. 2) in the control device 9. Then, the detection unit 91 detects the liquid film width W1 by performing image analysis on the image data.

Next, the control unit 90 in the control device 9 refers to the liquid film width W1 detected by the detection unit 91 and determines the rotation speed of the substrate W and the discharge amount of the processing liquid 150 discharged from the peripheral nozzle 50. adjust.

Specifically, when narrowing the liquid film width W1, the control unit 90 increases the rotation speed of the substrate W to increase the centrifugal force of the substrate W. On the other hand, when increasing the liquid film width W1, the control unit 90 lowers the rotation speed of the substrate W to reduce the centrifugal force of the substrate W. When the rotation speed of the substrate W is increased, the discharge amount of the processing liquid 150 is lowered as necessary. On the other hand, when the rotation speed of the substrate W is lowered, the discharge amount of the processing liquid 150 is reduced as necessary. Increase accordingly. Furthermore, when the discharge amount of the processing liquid 150 is lowered, the concentration or temperature of the processing liquid 150 may be increased. Similarly, when the discharge amount of the processing liquid 150 is increased, the concentration or temperature of the processing liquid 150 may be lowered.

As a second method, first, the detection unit 91 in the control device 9 refers to a processing recipe for processing the substrate W from a storage medium of the control device 9 or the like. Then, the liquid film width W1 to be formed by the processing liquid 150 is detected from the etching profile of the processing recipe corresponding to this step.

Next, the control unit 90 in the control device 9 determines the rotation speed of the substrate W and the processing liquid to be discharged from the peripheral nozzle 50 while referring to the liquid film width W1 detected by the detection unit 91 and a correspondence table described below. Adjust the discharge amount of 150.

Here, the above correspondence table is a table showing the relationship between the liquid film width W1 formed by the processing liquid 150, the rotation speed of the substrate W, and the discharge amount of the processing liquid 150, and is created in advance through experiments or the like. .

By controlling the liquid film width W1 of the processing liquid 150 discharged from the peripheral nozzle 50, the range in which the etching rate is determined by the processing liquid 150 can be specified with high accuracy, thereby realizing a desired etching profile. Can be done.

<About the effects produced by the embodiments described above>
Next, examples of effects produced by the embodiment described above will be shown. In addition, in the following description, the effects will be described based on the specific configurations shown in the embodiments described above, but examples will not be included in the present specification to the extent that similar effects are produced. may be replaced with other specific configurations shown.

According to the embodiment described above, the substrate processing method includes the step of rotating the substrate W held in the substrate holding part, and the use of the central nozzle 20 at the center of the rotating substrate W. The process includes a step of discharging the first processing liquid and a step of discharging the second processing liquid onto the peripheral edge of the rotating substrate W using the peripheral nozzle 50. Here, the substrate holder corresponds to, for example, the spin chuck 10. Further, the first processing liquid corresponds to, for example, the processing liquid 120. Further, the second processing liquid corresponds to, for example, the processing liquid 150. Here, the peripheral nozzle 50 discharges the processing liquid 150 along the forward direction of rotation of the substrate W from a direction inclined by an angle θ with respect to the main surface of the substrate W. Further, the peripheral nozzle 50 applies the processing liquid 150 to the peripheral edge of the substrate W after a position half a turn in the forward direction of rotation of the substrate W from the straight line D1 connecting the center position CP of the substrate W and the center nozzle 20 in plan view. Discharge.

According to such a configuration, the degree of freedom in etching profile can be increased. Specifically, the processing liquid 150 ejected from the peripheral nozzle 50 is ejected to a location where the liquid film formed by the processing liquid 120 ejected from the central nozzle 20 becomes relatively thin. Therefore, the processing liquid 150 is less likely to be interfered with by the processing liquid 120, so that the processing liquid 150 reaches the upper surface of the substrate W and acts on the upper surface of the substrate W more easily. Therefore, the processing action of the processing liquid 150 is enhanced, and it becomes easier to realize a desired etching rate, for example, an etching rate that is significantly different between the central portion and the peripheral portion of the substrate W. As a result, for example, the shape of the focus ring used to make the etching rate uniform during dry etching changes due to the dry etching, and the etching process that causes the etching gas concentration at the peripheral edge of the substrate W to be uneven may occur. Even in the case of a process, by performing an etching process in which the etching profile is significantly different between the central part and the peripheral part of the substrate, it is possible to perform the substrate processing while canceling out the non-uniformity of etching.

Note that if there are no particular restrictions, the order in which each process is performed can be changed.

In addition, if other configurations exemplified in the specification of the present application are appropriately added to the above configuration, that is, if other configurations in the specification of the present application that are not mentioned as the above configurations are appropriately added. Even if there is, the same effect can be produced.

Further, according to the embodiment described above, the process of rotating the substrate W held on the spin chuck 10 and the process of applying the processing liquid 120 to the center of the rotating substrate W using the central nozzle 20 a step of discharging the processing liquid 150 onto the periphery of the rotating substrate W using the peripheral nozzle 50; and a step of discharging the processing liquid 150 onto the periphery of the rotating substrate W, and determining the radial width of the liquid film of the processing liquid 150 at the periphery of the substrate W. and a step of controlling the rotational speed of the rotating substrate W and the discharge amount of the processing liquid 150 from the peripheral nozzle 50 based on the detected liquid film width W1. Be prepared. Here, the peripheral nozzle 50 discharges the processing liquid 150 along the forward direction of rotation of the substrate W from a direction inclined by an angle θ with respect to the main surface of the substrate W.

According to such a configuration, the degree of freedom of etching profile can be increased. Specifically, by controlling the liquid film width W1 of the processing liquid 150 discharged from the peripheral nozzle 50, it is possible to specify with high precision the range in which the etching rate is determined by the processing liquid 150. profile can be realized.

Note that if there are no particular restrictions, the order in which each process is performed can be changed.

In addition, if other configurations exemplified in the specification of the present application are appropriately added to the above configuration, that is, if other configurations in the specification of the present application that are not mentioned as the above configurations are appropriately added. Even if there is, the same effect can be produced.

Further, according to the embodiment described above, the peripheral nozzle 50 discharges the processing liquid 150 after the liquid film of the processing liquid 120 is formed at the center of the substrate W. According to such a configuration, the central part of the upper surface of the substrate W is less likely to be affected by the processing liquid 150 discharged from the peripheral nozzle 50, so that defects in the central part of the substrate W caused by the action of the processing liquid 150 can be prevented. Can be suppressed.

Further, according to the embodiment described above, the processing liquid 120 and the processing liquid 150 are different types of processing liquids. According to such a configuration, the etching rate can be made to be significantly different between the central portion and the peripheral portion of the substrate W.

Further, according to the embodiment described above, the central nozzle 20 is swingable in the radial direction of the substrate W. According to such a configuration, the processing liquid 120 discharged from the central nozzle 20 can be quickly and uniformly diffused.

<About modifications of the embodiment described above>
In the embodiment described above, the discharge amount, concentration, temperature, etc. of the processing liquid from the central nozzle 20 and the peripheral nozzle 50 are controlled so as to offset the non-uniformity of the etching rate expected from the processing recipe. , before performing substrate processing using the central nozzle 20 and the peripheral nozzle 50, the thickness of the film or the depth of the groove formed on the upper surface of the substrate W is actually measured using an optical sensor or the like, and the actual measured value is By referring to the above, the discharge amount, concentration, temperature, etc. of the processing liquid from the central nozzle 20 and the peripheral nozzle 50 may be controlled.

In the embodiments described above, the materials, materials, dimensions, shapes, relative arrangement relationships, implementation conditions, etc. of each component may also be described, but these are only one example in all aspects. However, it is not limited to what is described in the specification of this application.

Accordingly, countless variations and equivalents, not illustrated, are envisioned within the scope of the technology disclosed herein. For example, this includes cases in which at least one component is modified, added, or omitted.

In addition, in the embodiments described above, if a material name is stated without being specified, unless a contradiction occurs, the material may contain other additives, such as an alloy. shall be included.

1 Substrate processing apparatus 3 Carrier mounting section 7 Processing unit 9 Control device 10 Spin chuck 10A Spin base 10C Rotating shaft 10D Spin motor 10E Chuck pin 12 Processing cup 20 Central nozzle 22, 52 Nozzle arm 22A, 52A Arm part 22B Shaft body 22C Actuator 25, 55 Valve 29, 59 Processing liquid supply source 50 Peripheral nozzle 52B Base 70 Camera 80 Chamber 90 Control section 91 Detection section 120, 150 Processing liquid

Claims (4)

a step of rotating the substrate held in the substrate holder;
discharging a first processing liquid onto the center of the rotating substrate using a center nozzle;
a step of discharging a second processing liquid using a peripheral nozzle to a peripheral part surrounding the central part of the rotating substrate in plan view;
The peripheral nozzle discharges the second processing liquid along the forward direction of rotation of the substrate from a direction inclined with respect to the main surface of the substrate,
From a position of a line connecting the center of the substrate and the center nozzle in the forward direction of the rotation of the substrate at the peripheral edge of the substrate on the opposite side of the center nozzle with respect to the center of the substrate in a plan view , the peripheral edge nozzle is located at a position between a line connecting the center of the substrate and the center nozzle in a plan view and a peripheral edge of the substrate on the same side as the center nozzle with respect to the center of the substrate. Discharging the processing liquid of 2.
Substrate processing method. The substrate processing method according to claim 1,
The step of discharging the first processing liquid is a step of moving the center nozzle from the center of the substrate in the radial direction of the substrate while discharging the first processing liquid from the center nozzle. ,
Substrate processing method. The substrate processing method according to claim 1 or 2,
The peripheral nozzle discharges the second processing liquid after a liquid film of the first processing liquid is formed in the center of the substrate.
Substrate processing method. A substrate processing method according to any one of claims 1 to 3,
The first processing liquid and the second processing liquid are different types of processing liquids,
Substrate processing method.

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