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JP7547147B2 - Film forming tray and solar cell manufacturing method - Google Patents

Film forming tray and solar cell manufacturing method Download PDF

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JP7547147B2
JP7547147B2 JP2020167799A JP2020167799A JP7547147B2 JP 7547147 B2 JP7547147 B2 JP 7547147B2 JP 2020167799 A JP2020167799 A JP 2020167799A JP 2020167799 A JP2020167799 A JP 2020167799A JP 7547147 B2 JP7547147 B2 JP 7547147B2
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substrate
film
recessed portion
tray
film formation
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JP2022059908A (en
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訓太 吉河
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Kaneka Corp
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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Description

本発明は、成膜用トレイ及び太陽電池製造方法に関する。 The present invention relates to a film forming tray and a solar cell manufacturing method.

半導体装置の製造において、半導体基板をトレイ上に載置して半導体基板の上側面に成膜を行うことがある(例えば、特許文献1参照)。太陽電池の製造においても、半導体基板の表面(光が入射する面)に反射防止膜を形成するために、半導体基板を保持するトレイを用いる場合がある。トレイ上に載置した半導体基板に成膜すると、半導体基板の端面にも膜が形成される。太陽電池では、半導体基板の端面から光が放出されることで光電変換効率が低下し得るため、半導体基板の端面にも反射防止膜を形成することが好ましいと考えられる。 In the manufacture of semiconductor devices, a semiconductor substrate may be placed on a tray and a film may be formed on the upper surface of the semiconductor substrate (see, for example, Patent Document 1). In the manufacture of solar cells, a tray may be used to hold the semiconductor substrate in order to form an anti-reflective film on the surface of the semiconductor substrate (the surface on which light is incident). When a film is formed on the semiconductor substrate placed on the tray, a film is also formed on the edge surface of the semiconductor substrate. In solar cells, light emission from the edge surface of the semiconductor substrate can reduce the photoelectric conversion efficiency, so it is considered preferable to form an anti-reflective film on the edge surface of the semiconductor substrate as well.

特開2008-159893号公報JP 2008-159893 A

従来の成膜用トレイ上に載置して半導体基板に反射防止膜を形成した太陽電池を詳細に検証した結果、半導体基板の端面への成膜が十分ではなく、依然として半導体基板の外周部から光が放出されて光電変換効率を低下させ得ることが確認された。そこで、本発明は、光の放出が少ない放太陽電池を製造できる成膜用トレイ及び太陽電池製造方法を提供することを課題とする。 A detailed examination of a solar cell that was placed on a conventional film-forming tray and had an anti-reflective film formed on the semiconductor substrate confirmed that film formation on the edge of the semiconductor substrate was insufficient, and that light still emitted from the outer periphery of the semiconductor substrate, reducing the photoelectric conversion efficiency. Therefore, the objective of the present invention is to provide a film-forming tray and a solar cell manufacturing method that can manufacture solar cells that emit less light.

本発明の一態様に係る成膜用トレイは、基板の下面を支持する支持部と、前記基板を平面方向に位置決めする複数の位置決め部と、前記支持部の外側に形成され、前記基板の外周部の下側に前記基板の外側に開放された下方空間を形成する掘り下げ部と、を備える。 A film formation tray according to one aspect of the present invention includes a support portion that supports the underside of a substrate, a plurality of positioning portions that position the substrate in a planar direction, and a recessed portion that is formed on the outside of the support portion and forms a lower space that is open to the outside of the substrate below the outer periphery of the substrate.

本発明に係る成膜用トレイにおいて、前記掘り下げ部は、前記基板の外周部に沿って延び、上側に向かって幅が増大する溝状であってもよい。 In the film formation tray according to the present invention, the recessed portion may be a groove extending along the outer periphery of the substrate and increasing in width toward the upper side.

本発明に係る成膜用トレイにおいて、前記掘り下げ部は、V溝状であってもよい。 In the film forming tray according to the present invention, the recessed portion may be V-groove-shaped.

本発明に係る成膜用トレイは前記掘り下げ部の外側に、前記掘り下げ部に沿って形成され、外側上方から前記掘り下げ部に向かって傾斜する傾斜面をさらに備えてもよい。 The film forming tray according to the present invention may further include an inclined surface formed along the outside of the recessed portion and inclined from the upper outside toward the recessed portion.

本発明に係る成膜用トレイにおいて、前記傾斜面は、前記掘り下げ部の外側面に滑らかに接続される平面であってもよい。 In the film forming tray of the present invention, the inclined surface may be a flat surface that is smoothly connected to the outer surface of the recessed portion.

本発明に係る成膜用トレイにおいて、前記位置決め部は、前記基板の四隅の位置を規制してもよい。 In the film formation tray of the present invention, the positioning portion may regulate the positions of the four corners of the substrate.

前記掘り下げ部は、前記基板の前記位置決め部に規制される部分の下側には形成されなくてもよい。 The recessed portion does not have to be formed below the portion of the substrate that is restricted by the positioning portion.

本発明の一態様に係る太陽電池製造方法は、上記成膜用トレイを用いて前記基板に反射防止膜を形成する工程を備える。 A solar cell manufacturing method according to one aspect of the present invention includes a step of forming an anti-reflective film on the substrate using the film-forming tray.

本発明に係る成膜用トレイ及び太陽電池製造方法によれば、光の放出が少ない放太陽電池を製造できる。 The film formation tray and solar cell manufacturing method of the present invention make it possible to manufacture solar cells that emit little light.

本発明の第1実施形態に係る成膜用トレイを示す平面図である。FIG. 2 is a plan view showing a film formation tray according to the first embodiment of the present invention. 図1の成膜用トレイのA-A線断面端部拡大図である。2 is an enlarged cross-sectional view of the film formation tray shown in FIG. 1 taken along line AA. 図1の成膜用トレイのB-B線断面端部拡大図である。2 is an enlarged cross-sectional view of the film formation tray shown in FIG. 1 along line BB. 本発明の第2実施形態に係る成膜用トレイの断面端部拡大図である。FIG. 11 is an enlarged cross-sectional view of an end portion of a film formation tray according to a second embodiment of the present invention. 本発明の第3実施形態に係る成膜用トレイの断面端部拡大図である。FIG. 11 is an enlarged cross-sectional view of an end portion of a film formation tray according to a third embodiment of the present invention.

以下、本発明の実施形態について、図面を参照しながら説明する。なお、便宜上、ハッチングや部材符号等を省略する場合もあるが、かかる場合、他の図面を参照するものとする。また、図面における種々部材の寸法は、便宜上、見やすいように調整されている。 Embodiments of the present invention will be described below with reference to the drawings. For convenience, hatching and component symbols may be omitted. In such cases, other drawings should be referenced. Also, the dimensions of various components in the drawings have been adjusted for ease of viewing.

<第1実施形態>
図1は、本発明の第1実施形態に係る成膜用トレイ1の平面図である。図2は、図1の成膜用トレイ1のA-A線断面端部拡大図である。図3は、図1の成膜用トレイ1のB-B線断面端部拡大図である。
First Embodiment
Fig. 1 is a plan view of a film formation tray 1 according to a first embodiment of the present invention. Fig. 2 is an enlarged cross-sectional end view of the film formation tray 1 taken along line A-A in Fig. 1. Fig. 3 is an enlarged cross-sectional end view of the film formation tray 1 taken along line B-B in Fig. 1.

本実施形態の成膜用トレイ1は、成膜装置の内部において、基板Pを保持する。成膜用トレイ1を用いて成膜される基板Pは、典型的には、太陽電池を形成する半導体基板であって、表裏にpn接合、電極等が形成されたものであってもよい。成膜用トレイ1を用いて基板Pに積層される膜としては、典型的には反射防止膜が想定される。 The film-forming tray 1 of this embodiment holds the substrate P inside the film-forming apparatus. The substrate P on which a film is formed using the film-forming tray 1 is typically a semiconductor substrate on which a solar cell is formed, and may have a pn junction, electrodes, etc. formed on the front and back sides. A typical example of the film that is laminated on the substrate P using the film-forming tray 1 is an anti-reflective film.

成膜用トレイ1は、それぞれ1つの基板Pを保持する複数の保持部10が縦横に配列して形成されている。成膜用トレイ1は、各保持部10に、基板Pの下面を支持する支持部11と、基板Pの平面方向位置を規制する複数の位置決め部12と、支持部11の外側に形成され、基板Pの外周部の下側に基板Pの外側に開放された下方空間Sを形成する掘り下げ部13と、掘り下げ部13の外側に、掘り下げ部13に沿って形成され、外側上方から掘り下げ部13に向かって傾斜する傾斜面14と、を備える。 The film-forming tray 1 is formed by arranging multiple holding parts 10 vertically and horizontally, each holding one substrate P. Each holding part 10 of the film-forming tray 1 is provided with a support part 11 that supports the lower surface of the substrate P, multiple positioning parts 12 that regulate the planar position of the substrate P, a recessed part 13 formed on the outside of the support part 11 and forming a lower space S that is open to the outside of the substrate P below the outer periphery of the substrate P, and an inclined surface 14 formed along the recessed part 13 on the outside of the recessed part 13 and inclined from the upper outside toward the recessed part 13.

成膜用トレイ1は、例えばアルミニウム、アルミニウム合金、ステンレス鋼等の金属から形成することができる。特に、成膜用トレイ1をアルミニウム等の比較的比熱が小さく熱伝導率が大きい金属によって形成することで、成膜品質を向上することができる。 The film formation tray 1 can be made of a metal such as aluminum, an aluminum alloy, or stainless steel. In particular, by making the film formation tray 1 out of a metal such as aluminum that has a relatively low specific heat and high thermal conductivity, the film formation quality can be improved.

支持部11は、その上端に、基板Pの下面に実質的に連続して当接し、基板Pの中央部下側に成膜ガスが入り込むことを防止できる平面状の載置面111を有する。具体例として、載置面111は、例えば高さ数十μm程度の突起を有し、比較的小さい接触面積で基板Pを支持し、それ以外の領域では実質的に成膜ガスが浸入できない微細な隙間を形成するよう構成されてもよい。 The support portion 11 has a planar mounting surface 111 at its upper end that is in substantially continuous contact with the underside of the substrate P and can prevent the deposition gas from entering the central underside of the substrate P. As a specific example, the mounting surface 111 may have protrusions, for example, several tens of μm in height, and be configured to support the substrate P with a relatively small contact area and form minute gaps in other areas that substantially prevent the deposition gas from penetrating.

また、載置面111は、平面視で支持部11の全体に形成されてもよいが、少なくとも支持部11の外周近傍領域に形成される。支持部11の外周部の高さを僅かに大きくして載置面111を部分的に形成することで、載置面以外の部分の加工精度を低くすることができる。 The mounting surface 111 may be formed over the entire support part 11 in plan view, but is formed at least in the area near the outer periphery of the support part 11. By making the height of the outer periphery of the support part 11 slightly larger and forming the mounting surface 111 partially, the machining accuracy of the parts other than the mounting surface can be reduced.

位置決め部12は、基板Pの外縁に当接し得る規制部121をそれぞれ有する。規制部121は、基板Pの平面位置を正確に規制できるよう、載置面111に垂直な面であることが好ましい。本実施形態の成膜用トレイ1は、基板Pの四隅の位置を規制する4つの位置決め部12を備える。このように、基板Pの規制部121が当接している部分には成膜することができないが、内部の光が比較的到達しにくい基板Pの四隅に規制部121を当接させることで、その部分に成膜できなかった場合にもそこから放出される光の量を小さくすることができる。 The positioning portions 12 each have a restricting portion 121 that can come into contact with the outer edge of the substrate P. The restricting portion 121 is preferably a surface perpendicular to the placement surface 111 so that the planar position of the substrate P can be accurately restricted. The film formation tray 1 of this embodiment has four positioning portions 12 that restrict the positions of the four corners of the substrate P. In this way, a film cannot be formed on the portion of the substrate P where the restricting portion 121 comes into contact, but by abutting the restricting portion 121 against the four corners of the substrate P where the internal light is relatively difficult to reach, the amount of light emitted from that portion can be reduced even if a film cannot be formed on that portion.

掘り下げ部13は、基板Pの四辺の下側に下方空間Sを形成することによって、基板Pの外周部の下面側に成膜ガスを供給する。ただし、掘り下げ部13からの成膜ガスの供給量は、基板Pの上面に対する成膜ガスの供給量よりは少なくなるので、基板Pの端面から裏面端部にかけて形成される膜の厚みは徐々に減少する。 The recessed portion 13 supplies film formation gas to the underside of the outer periphery of the substrate P by forming a lower space S below the four sides of the substrate P. However, since the amount of film formation gas supplied from the recessed portion 13 is less than the amount of film formation gas supplied to the upper surface of the substrate P, the thickness of the film formed from the edge surface of the substrate P to the rear end portion gradually decreases.

掘り下げ部13は、上側に向かって幅が増大する溝状であることが好ましい。これによって、基板Pの下側に成膜ガスを効率よく案内することができる。掘り下げ部13は、本実施形態のように、内側面131と外側面132とから形成されるV溝状とすることによって、比較的容易に形成することができる。V溝状の掘り下げ部13の底角としては、成膜ガスを効率よく案内するために90°以上が好ましい。また、V溝状の掘り下げ部13の底角を略90°とすれば、例えばエンドミル等によって掘り下げ部13をより簡単に形成することができる。 It is preferable that the dug portion 13 is groove-shaped with a width that increases toward the upper side. This allows the deposition gas to be efficiently guided to the underside of the substrate P. The dug portion 13 can be formed relatively easily by making it a V-groove formed by an inner surface 131 and an outer surface 132, as in this embodiment. The base angle of the V-groove-shaped dug portion 13 is preferably 90° or more in order to efficiently guide the deposition gas. Furthermore, if the base angle of the V-groove-shaped dug portion 13 is approximately 90°, the dug portion 13 can be formed more easily, for example, by an end mill.

本実施形態における掘り下げ部13は、位置決め部12が設けられる部分には形成されていない。つまり、本実施形態の掘り下げ部13は、基板Pの四隅近傍には形成されていない。これにより、掘り下げ部13の形状がより簡単となるため掘り下げ部13をさらに簡単に形成することができる。 In this embodiment, the recessed portion 13 is not formed in the portion where the positioning portion 12 is provided. In other words, in this embodiment, the recessed portion 13 is not formed near the four corners of the substrate P. This makes the shape of the recessed portion 13 simpler, and therefore the recessed portion 13 can be formed even more easily.

平面視における掘り下げ部13の基板Pとの平均重複幅は、例えば0.2mm以上2.0mm以下、好ましくは0.5mm以上1.0mm以下とすることができる。掘り下げ部13の基板Pとの平均重複幅を前記下限以上とすることによって、基板Pの位置決め誤差にかかわらず、基板Pの下側に下方空間Sを形成することができる。また、掘り下げ部13の基板Pとの平均重複幅を前記上限以下とすることによって、基板Pの裏面に必要以上に成膜されることを防止できる。 The average overlap width of the recessed portion 13 with the substrate P in plan view can be, for example, 0.2 mm to 2.0 mm, and preferably 0.5 mm to 1.0 mm. By setting the average overlap width of the recessed portion 13 with the substrate P to be equal to or greater than the lower limit, a lower space S can be formed below the substrate P regardless of positioning errors of the substrate P. Furthermore, by setting the average overlap width of the recessed portion 13 with the substrate P to be equal to or less than the upper limit, it is possible to prevent more film than necessary from being formed on the rear surface of the substrate P.

掘り下げ部13の平均幅(掘り下げ部13の外縁は載置面111の延長面との交線とする)は、2mm以上8mm以下が好ましく、3mm以上5mm以下がより好ましい。掘り下げ部13の平均幅を前記下限以上とすることによって、下方空間Sをより確実に外側空間に開放することができる。また、掘り下げ部13の平均幅を前記上限以下とすることによって、保持部10が必要以上に大きくなることを防止することで、1つの成膜用トレイ1で同時に処理できる基板Pの数を増大することができる。 The average width of the recessed portion 13 (the outer edge of the recessed portion 13 is the intersection with the extended surface of the mounting surface 111) is preferably 2 mm to 8 mm, and more preferably 3 mm to 5 mm. By making the average width of the recessed portion 13 equal to or greater than the lower limit, the lower space S can be more reliably opened to the outer space. Furthermore, by making the average width of the recessed portion 13 equal to or less than the upper limit, the holding portion 10 is prevented from becoming unnecessarily large, and the number of substrates P that can be processed simultaneously on one film formation tray 1 can be increased.

傾斜面14は、成膜ガスを掘り下げ部13に案内することによって、基板Pの端部裏面側への成膜を促進する。このため、傾斜面14は、掘り下げ部13の外側面132に滑らかに接続されることが好ましい。特に、本実施形態のように、傾斜面14と掘り下げ部13の外側面132とが連続一体の平面状であれば、傾斜面14を外側面132と同時に容易に形成することができる。 The inclined surface 14 guides the film formation gas to the recessed portion 13, thereby promoting film formation on the rear end side of the substrate P. For this reason, it is preferable that the inclined surface 14 is smoothly connected to the outer surface 132 of the recessed portion 13. In particular, if the inclined surface 14 and the outer surface 132 of the recessed portion 13 are continuous and planar, as in this embodiment, the inclined surface 14 can be easily formed simultaneously with the outer surface 132.

傾斜面14は、保持部10の間に畝状の突部を形成するため、成膜用トレイ1の強度を向上することにも寄与する。このため、支持部11における厚みを小さくして成膜用トレイ1を軽量化することができる。 The inclined surface 14 forms a ridge-like protrusion between the holding parts 10, which also contributes to improving the strength of the film formation tray 1. This allows the thickness of the support part 11 to be reduced, making the film formation tray 1 lighter.

傾斜面14の載置面111に対する傾斜角度としては、例えば30°以上60°以下とすることができる。これにより、成膜ガスを比較的効率よく掘り下げ部13に案内することができる。 The inclination angle of the inclined surface 14 relative to the mounting surface 111 can be, for example, 30° or more and 60° or less. This allows the deposition gas to be guided relatively efficiently to the recessed portion 13.

傾斜面14の高さ(載置面111からの垂直高さ)としては、例えば0.5mm以上3mm以下とすることができる。これによって、成膜用トレイ1の高さが不必要に大きくなることを防止しつつ、掘り下げ部13に成膜ガスを案内することができる。 The height of the inclined surface 14 (vertical height from the mounting surface 111) can be, for example, 0.5 mm or more and 3 mm or less. This makes it possible to guide the film formation gas to the recessed portion 13 while preventing the height of the film formation tray 1 from becoming unnecessarily large.

以上のように、成膜ガスを基板Pの裏面側に回り込ませる下方空間Sを形成する成膜用トレイ1を用いることによって、基板Pの表面、外周端面、及び裏面外縁部に連続して成膜を行うことができる。基板Pの外周端面及び裏面外縁部への成膜は、表面への成膜と比べて成膜ガスの供給量が小さくなり得るため、基板Pの外周端面から裏面に掛けて形成される膜は、表面側から徐々に膜厚が小さくなる可能性があるが、少なくとも外周端面には十分な膜厚を有する被膜を形成することができる。 As described above, by using a film-forming tray 1 that forms a lower space S that allows the film-forming gas to flow around to the back side of the substrate P, it is possible to perform continuous film formation on the front surface, outer peripheral edge, and outer edge of the back surface of the substrate P. Since the amount of film-forming gas supplied to the outer peripheral edge and outer edge of the back surface of the substrate P may be smaller than that for film formation on the front surface, the film formed from the outer peripheral edge to the back surface of the substrate P may gradually become thinner from the front surface, but a coating with sufficient thickness can be formed at least on the outer peripheral edge.

このため、成膜用トレイ1を用いて太陽電池用の半導体基板に反射防止膜を形成することで、端面からの光の放出を防止して、光電変換効率が高い太陽電池を製造することができる。このように、成膜用トレイ1を用いて基板Pに反射防止膜を形成する工程を備える太陽電池製造方法は、本発明に係る太陽電池製造方法の一実施形態であると解される。 Therefore, by using the film-forming tray 1 to form an anti-reflective film on the semiconductor substrate for a solar cell, it is possible to prevent light from emitting from the end face and manufacture a solar cell with high photoelectric conversion efficiency. In this way, a solar cell manufacturing method that includes a step of forming an anti-reflective film on the substrate P using the film-forming tray 1 can be understood as one embodiment of the solar cell manufacturing method according to the present invention.

より詳しく説明すると、本発明に係る太陽電池製造方法では、成膜用トレイ1の支持部11に基板Pを、複数の位置決め部12によって平面位置を定めた状態で載置する。そして、基板Pを載置した成膜用トレイ1をCVD装置またはPVD装置の真空チャンバ内に配置して、成膜ガスを供給して基板Pの上面、端面及び裏面外縁部に反射防止膜を形成する。 To explain in more detail, in the solar cell manufacturing method according to the present invention, the substrate P is placed on the support portion 11 of the film-forming tray 1 with its planar position determined by a plurality of positioning portions 12. The film-forming tray 1 on which the substrate P is placed is then placed in a vacuum chamber of a CVD or PVD device, and a film-forming gas is supplied to form an anti-reflective film on the top surface, edge surface, and rear outer edge portion of the substrate P.

太陽電池を形成するための基板Pは、入射光を吸収して光キャリア(電子および正孔)を生成する光電変換基板単であり、結晶シリコンまたは多結晶シリコン等の結晶シリコン基板を用いることができる。また、基板Pには、反射防止膜を形成する前に、キャリアを回収するためのpn接合を形成する半導体層、電荷を収集するための電極、キャリアの再結合を抑制するパッシベーション層、構成要素間を分離する絶縁層等の各種の構成要素が形成されていてもよい。 The substrate P for forming the solar cell is a single photoelectric conversion substrate that absorbs incident light to generate photocarriers (electrons and holes), and a crystalline silicon substrate such as crystalline silicon or polycrystalline silicon can be used. In addition, before forming the anti-reflection film, various components such as a semiconductor layer that forms a pn junction for collecting carriers, an electrode for collecting electric charge, a passivation layer that suppresses recombination of carriers, and an insulating layer that separates the components may be formed on the substrate P.

反射防止膜は、基板Pに入射した光が内部で反射して外部に出射しないよう、基板Pの表面で内側に向かって光を再反射させる層である。反射防止膜の材質としては、例えばSiO、SiN、SiON等を挙げることができる。 The anti-reflection film is a layer that re-reflects light inward on the surface of the substrate P so that the light that enters the substrate P is not reflected internally and emitted to the outside. Examples of materials that can be used for the anti-reflection film include SiO, SiN, and SiON.

<第2実施形態>
図4は、本発明の第2実施形態に係る成膜用トレイ1Aの断面図である。なお、以降の実施形態について、先に説明した実施形態と同様の構成要素には同じ符号を付して重複する説明を省略することがある。
Second Embodiment
4 is a cross-sectional view of a film formation tray 1A according to a second embodiment of the present invention. In the following embodiments, the same components as those in the previously described embodiments are denoted by the same reference numerals, and duplicated descriptions may be omitted.

成膜用トレイ1は、基板Pの下面を支持する支持部11と、基板Pの平面方向位置を規制する複数の位置決め部(不図示)と、支持部11の外側に形成され、基板Pの外周部の下側に基板Pの外側に開放された下方空間を形成する掘り下げ部13Aと、掘り下げ部13Aの外側に、掘り下げ部13Aに沿って形成され、外側上方から掘り下げ部13Aに向かって傾斜する傾斜面14Aと、を備える。 The film forming tray 1 includes a support portion 11 that supports the lower surface of the substrate P, a number of positioning portions (not shown) that regulate the planar position of the substrate P, a recessed portion 13A formed on the outside of the support portion 11 and forming a lower space that is open to the outside of the substrate P below the outer periphery of the substrate P, and an inclined surface 14A formed on the outside of the recessed portion 13A along the recessed portion 13A and inclined from the upper outside toward the recessed portion 13A.

本実施形態の掘り下げ部13Aは、垂直な内側面131及び外側面132とこれらの下端を接続する底面133とを有する方形溝状に形成されている。係る形状の掘り下げ部13Aであっても、成膜ガスを基板Pの外縁部の裏面側に導いて基板Pの端部を完全に被覆する膜を形成することができる。 In this embodiment, the recessed portion 13A is formed in a rectangular groove shape having vertical inner and outer surfaces 131 and 132 and a bottom surface 133 connecting the lower ends of these surfaces. Even with the recessed portion 13A having such a shape, it is possible to form a film that completely covers the edge of the substrate P by directing the film forming gas to the back side of the outer edge of the substrate P.

本実施形態の傾斜面14Aは、外側面132と離間して形成されている。このように、傾斜面14Aと掘り下げ部13Aとが連続していなくても、成膜ガスを基板Pの外縁部の裏面側に導くことができる。 In this embodiment, the inclined surface 14A is formed at a distance from the outer surface 132. In this way, even if the inclined surface 14A and the recessed portion 13A are not continuous, the deposition gas can be guided to the back side of the outer edge portion of the substrate P.

<第3実施形態>
図5は、本発明の第3実施形態に係る成膜用トレイ1Bの断面図である。本実施形態の成膜用トレイ1Bは、支持部11と、複数の位置決め部(不図示)と、支持部11の外側に形成され、基板Pの外周部の下側に基板Pの外側に開放された下方空間を形成する掘り下げ部13Bと、掘り下げ部13Bの外側に、掘り下げ部13Bに沿って形成され、外側上方から掘り下げ部13Bに向かって傾斜する傾斜面14Bと、を備える。
Third Embodiment
5 is a cross-sectional view of a film formation tray 1B according to a third embodiment of the present invention. The film formation tray 1B of this embodiment includes a support portion 11, a plurality of positioning portions (not shown), a recessed portion 13B formed outside the support portion 11 and forming a lower space below the outer periphery of the substrate P that is open to the outside of the substrate P, and an inclined surface 14B formed outside the recessed portion 13B along the recessed portion 13B and inclined from the upper outside toward the recessed portion 13B.

本実施形態の掘り下げ部13Bは、半円形溝状に形成されている。また、本実施形態の傾斜面14Bは、掘り下げ部13Bに向かって傾斜角度が減少するよう、円筒面状に形成されている。このような掘り下げ部13B及び傾斜面14Bは、例えばそれぞれボールエンドミルを用いて形成することができる。 In this embodiment, the recessed portion 13B is formed in a semicircular groove shape. In addition, the inclined surface 14B in this embodiment is formed in a cylindrical surface shape so that the inclination angle decreases toward the recessed portion 13B. Such recessed portion 13B and inclined surface 14B can each be formed using, for example, a ball end mill.

以上、本発明の実施形態について説明したが、本発明は上述した実施形態に限定されることなく、種々の変更および変形が可能である。 The above describes an embodiment of the present invention, but the present invention is not limited to the above embodiment and various modifications and variations are possible.

例として、本発明に係る成膜用トレイにおいて、傾斜面は省略してもよい。また、傾斜面の形状は、全体として掘り下げ部に向かって傾斜する形状であればよく、例えば階段状等であってもよい。 For example, in the film formation tray according to the present invention, the inclined surface may be omitted. Furthermore, the shape of the inclined surface may be any shape that slopes overall toward the recessed portion, and may be, for example, stepped.

また、本発明に係る成膜用トレイにおいて、堀り下げ部の断面形状は、上述の実施形態の形状に限られず、例えば台形状、放物線状、階段状等であってもよい。また、本発明に係る成膜用トレイの掘り下げ部は、隣接する保持部の掘り下げ部と一体に形成されていてもよい。この場合、傾斜面は設けることができない。 In addition, in the film formation tray according to the present invention, the cross-sectional shape of the recessed portion is not limited to the shape of the above-mentioned embodiment, and may be, for example, trapezoidal, parabolic, stepped, etc. In addition, the recessed portion of the film formation tray according to the present invention may be formed integrally with the recessed portion of the adjacent holding portion. In this case, an inclined surface cannot be provided.

また、本発明に係る成膜用トレイは、太陽電池の反射防止膜の形成以外にも、基板の一方の主面及び端面を被覆する薄膜を形成することが必要である場合に、広く利用することができる。 In addition to forming anti-reflective films for solar cells, the film-forming tray of the present invention can also be used in a wide range of applications when it is necessary to form a thin film that covers one of the main surfaces and end surfaces of a substrate.

また、本発明に係る成膜用トレイにおいて、位置決め部は、基板の四辺の一部に局所的に当接することにより基板を位置決めし得るものであってもよい。 In addition, in the film formation tray according to the present invention, the positioning portion may be capable of positioning the substrate by locally contacting a portion of the four sides of the substrate.

1,1A,1B 成膜用トレイ
10 保持部
11 支持部
111 載置面
12 位置決め部
121 規制部
13,13A,13B 掘り下げ部
131 内側面
132 外側面
133 底面
14,14A,14B 傾斜面
P 基板
S 下方空間
Reference Signs List 1, 1A, 1B Film formation tray 10 Holding portion 11 Support portion 111 Placement surface 12 Positioning portion 121 Regulating portion 13, 13A, 13B Depression portion 131 Inner surface 132 Outer surface 133 Bottom surface 14, 14A, 14B Inclined surface P Substrate S Lower space

Claims (6)

基板の下面を支持する支持部と、
前記基板の平面方向位置を規制する複数の位置決め部と、
前記支持部の外側に形成され、前記基板の外周部の下側に前記基板の外側に開放された下方空間を形成する掘り下げ部と、
を備え
前記位置決め部は、前記基板の四隅の位置を規制し、
前記掘り下げ部は、前記基板の四隅近傍を除く部分に形成される、成膜用トレイ。
A support portion that supports a lower surface of the substrate;
A plurality of positioning portions that regulate a position of the substrate in a planar direction;
a recessed portion formed outside the support portion and defining a lower space open to the outside of the substrate below an outer periphery of the substrate;
Equipped with
the positioning portion regulates the positions of the four corners of the substrate,
The recessed portion is formed in a portion of the substrate excluding the vicinity of each of the four corners of the substrate .
前記掘り下げ部は、上側に向かって幅が増大する溝状である、請求項1に記載の成膜用トレイ。 The film forming tray according to claim 1, wherein the recessed portion is a groove whose width increases toward the upper side. 前記掘り下げ部は、V溝状である、請求項2に記載の成膜用トレイ。 The film forming tray according to claim 2, wherein the recessed portion is a V-groove. 前記掘り下げ部の外側に、前記掘り下げ部に沿って形成され、外側上方から前記掘り下げ部に向かって傾斜する傾斜面をさらに備える、請求項1から3のいずれかに記載の成膜用トレイ。 The film forming tray according to any one of claims 1 to 3, further comprising an inclined surface formed along the hollow portion on the outside of the hollow portion and inclined from the upper outside toward the hollow portion. 前記傾斜面は、前記掘り下げ部の外側面に滑らかに接続される、請求項4に記載の成膜用トレイ。 The film forming tray of claim 4, wherein the inclined surface is smoothly connected to the outer surface of the recessed portion. 請求項1からのいずれかに記載の成膜用トレイを用いて、前記基板に反射防止膜を形成する工程を備える、太陽電池製造方法。 A solar cell manufacturing method, comprising: forming an anti-reflective film on the substrate by using the film formation tray according to claim 1 .
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