JP7720208B2 - SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - Google Patents

Description

The present invention relates to a substrate processing apparatus and a substrate processing method.

Substrate processing apparatuses for processing substrates are known. Substrate processing apparatuses are suitable for processing semiconductor substrates. Typically, substrate processing apparatuses process substrates using chemical processing liquids, etc.

When processing a substrate, if particles remain on the substrate, this can affect the characteristics of the substrate. For this reason, the use of a mixed fluid to remove particles from the substrate has been studied (see Patent Document 1). In the substrate processing method of Patent Document 1, particles on the substrate are removed by ejecting a mist formed by mixing pressurized gas and a chemical liquid in a two-fluid nozzle onto the substrate.

JP 2009-59876 A

In recent years, microfabrication of substrates has become increasingly advanced, and particle sizes are also becoming smaller. However, with the substrate processing method of Patent Document 1, if the particles to be removed are small, the particles may not be sufficiently removed.

The present invention was made in consideration of the above-mentioned problems, and its purpose is to provide a substrate processing apparatus and substrate processing method that can sufficiently remove relatively small objects to be removed from a substrate.

According to one aspect of the present invention, a substrate processing apparatus includes a substrate holding and rotating mechanism that holds a substrate in a horizontal orientation and rotates the substrate; a magnetic fluid supply unit that supplies a magnetic fluid to the substrate held by the substrate holding and rotating mechanism; a magnetic force application unit that applies a magnetic force to the magnetic fluid supplied to the substrate; a rinse liquid supply unit that supplies a rinse liquid to the substrate to remove the magnetic fluid from the substrate; and a control unit that controls the substrate holding and rotating mechanism, the magnetic fluid supply unit, the magnetic force application unit, and the rinse liquid supply unit.

In one embodiment, the magnetic fluid supply unit supplies a magnetic ionic liquid as the magnetic fluid.

In one embodiment, the magnetic force application unit includes a magnetic force generator that generates a magnetic force and a movement mechanism that moves the magnetic force generator. The control unit controls the magnetic fluid supply unit and the movement mechanism so that the magnetic force generator approaches the substrate while the magnetic fluid supply unit supplies the magnetic fluid to the substrate.

In one embodiment, the control unit controls the movement mechanism so that the magnetic force generator is positioned at a distance of 0.1 mm or more and 10 mm or less from the substrate.

In one embodiment, the substrate processing apparatus further includes a mixed fluid supply unit that supplies a mixed fluid of liquid and gas to the substrate.

In one embodiment, the control unit controls the mixed fluid supply unit so that the mixed fluid supply unit supplies the mixed fluid to the substrate before the magnetic fluid supply unit supplies the magnetic fluid to the substrate.

According to another aspect of the present invention, a substrate processing method includes a substrate holding step of holding a substrate in a horizontal direction, a substrate rotation step of rotating the substrate held in the substrate holding step, a magnetic fluid supply step of supplying a magnetic fluid to the substrate rotating in the substrate rotation step, a magnetic force application step of applying a magnetic force to the magnetic fluid supplied to the substrate in the magnetic fluid supply step, and a rinse liquid supply step of removing the magnetic fluid from the substrate by supplying a rinse liquid to the substrate.

In one embodiment, the magnetic fluid supplying step includes a step of supplying a magnetic ionic liquid as the magnetic fluid.

In one embodiment, the magnetic force application step includes a moving step in which a magnetic force generator is moved closer to the substrate while the magnetic fluid is being supplied to the substrate in the magnetic fluid supplying step, and a magnetic force generating step in which the magnetic force generator generates a magnetic force after the substrate has been moved in the moving step.

In one embodiment, during the moving step, the magnetic force generator moves a distance of 0.1 mm or more and 10 mm or less relative to the substrate.

In one embodiment, the substrate processing method further includes a mixed fluid supplying step of supplying a mixed fluid of a liquid and a gas to the substrate.

In one embodiment, the mixed fluid supplying step supplies the mixed fluid to the substrate before the magnetic fluid is supplied to the substrate in the magnetic fluid supplying step.

The present invention allows for sufficient removal of relatively small objects on a substrate.

1 is a schematic diagram of a substrate processing system including a substrate processing apparatus according to an embodiment of the present invention; 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; 1 is a block diagram of a substrate processing apparatus according to an embodiment of the present invention; FIG. 2 is a flow diagram of the substrate processing apparatus according to the present embodiment. 1A to 1D are schematic views for explaining the substrate processing method of the present embodiment. 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; FIG. 2 is a flow diagram of the substrate processing apparatus according to the present embodiment. 1A to 1E are schematic views for explaining the substrate processing method of the present embodiment. 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; FIG. 2 is a flow diagram of the substrate processing apparatus according to the present embodiment.

Embodiments of a substrate processing apparatus and a substrate processing method according to the present invention will be described below with reference to the drawings. Note that in the drawings, identical or corresponding parts are designated by the same reference numerals, and descriptions thereof will not be repeated. Note that, in this specification, to facilitate understanding of the invention, mutually orthogonal X-, Y-, and Z-axes may be described. Typically, the X- and Y-axes are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction.

First, a substrate processing system 10 equipped with a substrate processing apparatus 100 according to this embodiment will be described with reference to Figure 1. Figure 1 is a schematic plan view of the substrate processing system 10.

As shown in FIG. 1, the substrate processing system 10 includes a plurality of substrate processing apparatuses 100. The substrate processing apparatuses 100 process substrates W. The substrate processing apparatuses 100 process the substrates W by performing at least one of etching, surface treatment, property imparting, treatment film formation, removal of at least a portion of a film, and cleaning.

The substrate W is used as a semiconductor substrate. The substrate W includes a semiconductor wafer. For example, the substrate W is approximately disk-shaped. Here, the substrate processing apparatus 100 processes the substrates W one by one.

As shown in FIG. 1, the substrate processing system 10 includes, in addition to multiple substrate processing apparatuses 100, a fluid cabinet 10A, a fluid box 10B, multiple load ports LP, an indexer robot IR, a center robot CR, and a controller 20. The controller 20 controls the load ports LP, indexer robot IR, center robot CR, and substrate processing apparatuses 100.

Each load port LP accommodates multiple stacked substrates W. The indexer robot IR transports substrates W between the load port LP and the center robot CR. A placement stage (path) on which substrates W are temporarily placed may be provided between the indexer robot IR and the center robot CR, allowing substrates W to be transferred indirectly between the indexer robot IR and the center robot CR via the placement stage. The center robot CR transports substrates W between the indexer robot IR and the substrate processing apparatus 100. Each substrate processing apparatus 100 processes substrates W by discharging liquid onto them. The liquid includes a magnetic fluid and a rinse liquid. Alternatively, the liquid may include other liquids. The fluid cabinet 10A contains liquid. The fluid cabinet 10A may contain gas.

The multiple substrate processing apparatuses 100 form multiple towers TW (four towers TW in FIG. 1) arranged to surround the center robot CR in a plan view. Each tower TW includes multiple substrate processing apparatuses 100 stacked vertically (three substrate processing apparatuses 100 in FIG. 1). Each fluid box 10B corresponds to one of the multiple towers TW. Liquid in the fluid cabinet 10A is supplied via one of the fluid boxes 10B to all of the substrate processing apparatuses 100 included in the tower TW corresponding to the fluid box 10B. Gas in the fluid cabinet 10A is supplied via one of the fluid boxes 10B to all of the substrate processing apparatuses 100 included in the tower TW corresponding to the fluid box 10B.

The control device 20 controls various operations of the substrate processing system 10. The control device 20 includes a control unit 22 and a memory unit 24. The control unit 22 has a processor. The control unit 22 has, for example, a central processing unit (CPU). Alternatively, the control unit 22 may have a general-purpose computer.

The memory unit 24 includes a main memory device and an auxiliary memory device. The main memory device is, for example, a semiconductor memory. The auxiliary memory device is, for example, a semiconductor memory and/or a hard disk drive. The memory unit 24 may also include removable media. The control unit 22 executes computer programs stored in the memory unit 24 to perform substrate processing operations.

The memory unit 24 also stores data and computer programs. The data includes recipe data. The recipe data includes information indicating multiple recipes. Each of the multiple recipes specifies the processing content and processing procedure for the substrate W.

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figure 2. Figure 2 is a schematic diagram of the substrate processing apparatus 100.

The substrate processing apparatus 100 includes a chamber 110, a substrate holding and rotating mechanism 120, a magnetic fluid supply unit 130, a rinse liquid supply unit 140, and a magnetic force application unit 150. The chamber 110 accommodates a substrate W. The chamber 110 also accommodates the substrate holding and rotating mechanism 120 and at least a portion of the magnetic fluid supply unit 130, the rinse liquid supply unit 140, and the magnetic force application unit 150.

The chamber 110 is roughly box-shaped and has an internal space. The chamber 110 accommodates substrates W. Here, the substrate processing apparatus 100 is a single-wafer type that processes substrates W one by one, and the chamber 110 accommodates substrates W one by one. The substrates W are accommodated in the chamber 110 and processed within the chamber 110.

The substrate holding and rotation mechanism 120 holds the substrate W. The substrate holding and rotation mechanism 120 holds the substrate W horizontally so that the top surface (front surface) Wa of the substrate W faces upward and the back surface (bottom surface) Wb of the substrate W faces vertically downward. The substrate holding and rotation mechanism 120 also rotates the substrate W while holding it. The top surface Wa of the substrate W may be flattened. Alternatively, the top surface Wa of the substrate W may be provided with lines and spaces, or may have a pillar-shaped stacked structure with recesses. The substrate holding and rotation mechanism 120 rotates the substrate W while holding it.

For example, the substrate holding and rotating mechanism 120 may be a clamping type that clamps the edge of the substrate W. Alternatively, the substrate holding and rotating mechanism 120 may have any mechanism that holds the substrate W from its back surface Wb. For example, the substrate holding and rotating mechanism 120 may be a vacuum type. In this case, the substrate holding and rotating mechanism 120 holds the substrate W horizontally by adsorbing the central portion of the back surface Wb of the substrate W, which is the non-device formation surface, to its upper surface. Alternatively, the substrate holding and rotating mechanism 120 may be a combination of a clamping type that brings multiple chuck pins into contact with the peripheral edge surface of the substrate W, and a vacuum type.

For example, the substrate holding and rotating mechanism 120 includes a spin base 121, a chuck member 122, a shaft 123, an electric motor 124, and a housing 125. The chuck member 122 is provided on the spin base 121. The chuck member 122 chucks the substrate W. Typically, the spin base 121 is provided with multiple chuck members 122.

The shaft 123 is a hollow shaft. The shaft 123 extends vertically along the rotation axis Ax. The spin base 121 is connected to the upper end of the shaft 123. The substrate W is placed above the spin base 121.

The spin base 121 is disk-shaped. The chuck member 122 supports the substrate W horizontally. The shaft 123 extends downward from the center of the spin base 121. The electric motor 124 applies rotational force to the shaft 123. The electric motor 124 rotates the shaft 123 in a rotational direction, thereby rotating the substrate W and spin base 121 around the rotation axis Ax. The housing 125 surrounds the shaft 123 and the electric motor 124.

The magnetic fluid supply unit 130 supplies magnetic fluid to the substrate W. Typically, the magnetic fluid supply unit 130 supplies magnetic fluid to the upper surface Wa of the substrate W held by the substrate holding and rotation mechanism 120.

Magnetic fluids have magnetic properties. They act when magnetic force is applied.

The magnetic fluid is preferably a magnetic ionic liquid. By using a magnetic ionic liquid as the magnetic fluid, the substrate can be processed at room temperature.

Typically, magnetic ionic liquids are ferromagnetic. For example, magnetic ionic liquids are soft magnetic materials.

A typical example of a magnetic fluid is 1-alkyl-3-methylimidazolium-X (X = FeCl ₄ , FeBr ₄ , Fe ₂ Cl ₇ , or Fe ₂ Br ₇ ). For example, a magnetic fluid is composed of 1-alkyl-3-methylimidazolium, a typical cation constituting an ionic liquid, and ferric chloride, a typical magnetic anion.

For example, 1-butyl-3-methylimidazolium tetrachloroferrate (bmim[FeCl ₄ ]) may be used as the magnetic fluid, or 1-ethyl-3-methylimidazolium tetrachloroferrate (emim[FeCl ₄ ]) may be used as the magnetic fluid.

The magnetic fluid supply unit 130 includes a pipe 132, a valve 134, a nozzle 136, and a movement mechanism 138. The pipe 132 is supplied with magnetic fluid from a supply source. The valve 134 opens and closes the flow path within the pipe 132. The nozzle 136 is connected to the pipe 132. The nozzle 136 ejects the magnetic fluid onto the upper surface Wa of the substrate W. It is preferable that the nozzle 136 be configured to be movable relative to the substrate W.

The movement mechanism 138 moves the nozzle 136 in the horizontal and vertical directions. Specifically, the movement mechanism 138 moves the nozzle 136 in the circumferential direction around a rotation axis extending in the vertical direction. The movement mechanism 138 also raises and lowers the nozzle 136 in the vertical direction.

The movement mechanism 138 has an arm 138a, a shaft 138b, and a drive unit 138c. The arm 138a extends horizontally. The nozzle 136 is disposed at the tip of the arm 138a. The nozzle 136 is disposed at the tip of the arm 138a in a position that allows it to supply magnetic fluid toward the upper surface Wa of the substrate W held by the chuck member 122. More specifically, the nozzle 136 is connected to the tip of the arm 138a and protrudes downward from the arm 138a. The base end of the arm 138a is connected to the shaft 138b. The shaft 138b extends vertically.

The drive unit 138c has a rotation drive mechanism and an elevation drive mechanism. The rotation drive mechanism of the drive unit 138c rotates the shaft 138b around the rotation axis, causing the arm 138a to pivot along a horizontal plane around the shaft 138b. As a result, the nozzle 136 moves along the horizontal plane. More specifically, the nozzle 136 moves in the circumferential direction around the shaft 138b. The rotation drive mechanism of the drive unit 138c includes, for example, a motor that can rotate forward and backward.

The lifting drive mechanism of the drive unit 138c raises and lowers the shaft 138b in the vertical direction. When the lifting drive mechanism of the drive unit 138c raises and lowers the shaft 138b, the nozzle 136 rises and lowers in the vertical direction. The lifting drive mechanism of the drive unit 138c has a drive source such as a motor and a lifting mechanism, and the drive source drives the lifting mechanism to raise or lower the shaft 138b. The lifting mechanism includes, for example, a rack and pinion mechanism or a ball screw.

Typically, while the magnetic fluid supply unit 130 supplies magnetic fluid to the substrate W, the substrate holding and rotation mechanism 120 holds and rotates the substrate W. As a result, the magnetic fluid supplied to the substrate W from the magnetic fluid supply unit 130 flows radially outward on the substrate W.

The speed at which the magnetic fluid flows radially outward on the substrate W can be controlled by the substrate holding and rotation mechanism 120. By increasing the rotation speed of the substrate W by the substrate holding and rotation mechanism 120, the speed at which the magnetic fluid flows radially outward on the substrate W can be increased. Furthermore, by decreasing the rotation speed of the substrate W by the substrate holding and rotation mechanism 120, the speed at which the magnetic fluid flows radially outward on the substrate W can be decreased.

The rinse liquid supply unit 140 supplies rinse liquid to the substrate W. By supplying rinse liquid to the substrate W, the substrate W is rinsed. The rinse liquid is, for example, pure water (deionized water). Note that the rinse liquid is not limited to pure water, and may be any of carbonated water, electrolytic ionized water, hydrogen water, ozone water, IPA (isopropyl alcohol), and hydrochloric acid water with a diluted concentration (for example, approximately 10 to 100 ppm).

The rinse liquid supply unit 140 includes a pipe 142, a valve 144, a nozzle 146, and a movement mechanism 148. Rinse liquid is supplied to the pipe 142 from a supply source. The valve 144 opens and closes the flow path within the pipe 142. The nozzle 146 is connected to the pipe 142. The nozzle 146 ejects the rinse liquid onto the upper surface Wa of the substrate W. It is preferable that the nozzle 146 be configured to be movable relative to the substrate W.

Typically, while the rinse liquid supply unit 140 supplies rinse liquid to the substrate W, the substrate holding and rotation mechanism 120 rotates while holding the substrate W. As the substrate W rotates, the rinse liquid supplied to the substrate W from the rinse liquid supply unit 140 flows radially outward on the substrate W.

The speed at which the rinse liquid flows radially outward on the substrate W can be controlled by the substrate holding and rotation mechanism 120. By increasing the rotation speed of the substrate W by the substrate holding and rotation mechanism 120, the speed at which the rinse liquid flows radially outward on the substrate W can be increased. Furthermore, by decreasing the rotation speed of the substrate W by the substrate holding and rotation mechanism 120, the speed at which the rinse liquid flows radially outward on the substrate W can be decreased.

The movement mechanism 148 has an arm 148a, a shaft 148b, and a drive unit 148c. The arm 148a, shaft 148b, and drive unit 148c of the movement mechanism 148 have the same configuration as the arm 138a, shaft 138b, and drive unit 138c of the movement mechanism 138. Therefore, a detailed description of the arm 148a, shaft 148b, and drive unit 148c will be omitted.

The magnetic force application unit 150 applies a magnetic force to the substrate W. Typically, when the magnetic fluid supplied from the magnetic fluid supply unit 130 is on the substrate W, the magnetic force application unit 150 applies a magnetic force to the substrate W. When the magnetic force application unit 150 applies a magnetic force to the substrate W, the objects to be removed on the substrate W are suspended in the magnetic fluid.

The magnetic force application unit 150 may include a permanent magnet. The permanent magnet may be a neodymium magnet.

Alternatively, the magnetic force application unit 150 may include an electromagnet. When the magnetic force application unit 150 includes an electromagnet, the electromagnet is formed by winding a coil around a core made of a ferromagnetic material. Typically, the coil is made of copper wire. The magnetic force applied by the magnetic force application unit 150 can be adjusted by adjusting the current flowing through the coil.

The magnetic force application unit 150 may be movable relative to the substrate W. For example, it is preferable that the magnetic force application unit 150 be movable horizontally and/or vertically according to a movement mechanism controlled by the control unit 22.

The substrate processing apparatus 100 further includes a cup 180. The cup 180 recovers liquid splashed from the substrate W. The cup 180 moves up and down. For example, the cup 180 moves up vertically to the side of the substrate W for the period during which the magnetic fluid supply unit 130 supplies liquid to the substrate W. In this case, the cup 180 recovers liquid splashed from the substrate W due to the rotation of the substrate W. Furthermore, when the period during which the magnetic fluid supply unit 130 supplies liquid to the substrate W ends, the cup 180 moves down vertically from the side of the substrate W.

As described above, the control device 20 includes a control unit 22 and a memory unit 24. The control unit 22 controls the substrate holding and rotating mechanism 120, the magnetic fluid supply unit 130, the rinse liquid supply unit 140, the magnetic force application unit 150, and/or the cup 180. In one example, the control unit 22 controls the electric motor 124, the valves 134, 144, the movement mechanisms 138, 148, the magnetic force application unit 150, and/or the cup 180.

The substrate processing apparatus 100 of this embodiment is suitable for use in the fabrication of semiconductor devices having semiconductors. Typically, in semiconductor devices, conductive layers and insulating layers are stacked on a substrate. The substrate processing apparatus 100 is suitable for use in cleaning and/or processing (e.g., etching, changing characteristics, etc.) the conductive layers and/or insulating layers during the fabrication of semiconductor devices.

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 3. Figure 3 is a block diagram of the substrate processing apparatus 100.

As shown in FIG. 3 , the control device 20 controls various operations of the substrate processing apparatus 100. The control device 20 controls the indexer robot IR, center robot CR, substrate holding and rotation mechanism 120, magnetic fluid supply unit 130, rinse liquid supply unit 140, magnetic force application unit 150, and cup 180. Specifically, the control device 20 controls the indexer robot IR, center robot CR, substrate holding and rotation mechanism 120, magnetic fluid supply unit 130, rinse liquid supply unit 140, magnetic force application unit 150, and cup 180 by sending control signals to the indexer robot IR, center robot CR, substrate holding and rotation mechanism 120, magnetic fluid supply unit 130, rinse liquid supply unit 140, magnetic force application unit 150, and cup 180.

Specifically, the control unit 22 controls the indexer robot IR to transfer the substrate W using the indexer robot IR.

The control unit 22 controls the center robot CR to transfer the substrate W using the center robot CR. For example, the center robot CR receives an unprocessed substrate W and transports the substrate W into one of the multiple chambers 110. The center robot CR also receives a processed substrate W from the chamber 110 and transports the substrate W out.

The control unit 22 controls the substrate holding and rotation mechanism 120 to start rotation of the substrate W, change the rotation speed, and stop rotation of the substrate W. For example, the control unit 22 can control the substrate holding and rotation mechanism 120 to change the rotation speed of the substrate holding and rotation mechanism 120. Specifically, the control unit 22 can change the rotation speed of the substrate W by changing the rotation speed of the electric motor 124 of the substrate holding and rotation mechanism 120.

The control unit 22 can independently control the valve 134 of the magnetic fluid supply unit 130 and the valve 144 of the rinse liquid supply unit 140 to switch the states of the valves 134, 144 between open and closed. Specifically, the control unit 22 controls the valve 134 of the magnetic fluid supply unit 130 and the valve 144 of the rinse liquid supply unit 140 to open the valves 134, 144, thereby allowing the magnetic fluid and rinse liquid flowing through the pipes 132, 142 toward the nozzles 136, 146. The control unit 22 can also control the valve 134 of the magnetic fluid supply unit 130 and the valve 144 of the rinse liquid supply unit 140 to close the valves 134, 144, thereby stopping the supply of the magnetic fluid and rinse liquid flowing through the pipes 132, 142 toward the nozzles 136, 146.

The control unit 22 can independently control the movement mechanism 138 of the magnetic fluid supply unit 130 and the movement mechanism 148 of the rinse liquid supply unit 140 to move the nozzle 136 and the nozzle 146. Specifically, the control unit 22 can independently control the movement mechanism 138 of the magnetic fluid supply unit 130 and the movement mechanism 148 of the rinse liquid supply unit 140 to move the nozzle 136 and the nozzle 146 above the upper surface Wa of the substrate W. The control unit 22 can also independently control the movement mechanism 138 of the magnetic fluid supply unit 130 and the movement mechanism 148 of the rinse liquid supply unit 140 to move the nozzle 136 and the nozzle 146 to a retracted position away from above the upper surface Wa of the substrate W.

The control unit 22 may control the magnetic force application unit 150 to move the magnetic force application unit 150 relative to the substrate W. Furthermore, if the magnetic force application unit 150 includes an electromagnet, the control unit 22 may control the magnetic force application unit 150 to generate a magnetic force from the magnetic force application unit 150.

The control unit 22 may control the cup 180 to move it relative to the substrate W. Specifically, the control unit 22 raises the cup 180 vertically upward to the side of the substrate W for the period during which the magnetic fluid supply unit 130 supplies liquid to the substrate W. Furthermore, when the period during which the magnetic fluid supply unit 130 supplies liquid to the substrate W ends, the control unit 22 lowers the cup 180 vertically downward from the side of the substrate W.

The substrate processing apparatus 100 of this embodiment is suitable for use in forming semiconductor devices. For example, the substrate processing apparatus 100 is suitable for processing substrates W used as semiconductor devices with a stacked structure. Semiconductor devices are so-called 3D memory (storage devices). As an example, the substrate W is suitable for use as a NAND flash memory.

Next, the substrate processing method of this embodiment will be described with reference to Figures 1 to 4. Figure 4 is a flow diagram of the substrate processing method.

As shown in FIG. 4, in step S102, the substrate W is held. Specifically, the substrate holding and rotation mechanism 120 holds the substrate W. When the substrate W is loaded into the chamber 110, the substrate W is held by the substrate holding and rotation mechanism 120.

In step S104, the substrate W is rotated while being held. Specifically, the substrate holding and rotation mechanism 120 rotates the substrate W while being held.

In step S106, magnetic fluid is supplied to the substrate W. Specifically, the magnetic fluid supply unit 130 supplies the magnetic fluid to the substrate W.

In step S108, a magnetic force is applied to the substrate W. Specifically, the magnetic force application unit 150 is brought close to the magnetic fluid of the substrate W. If the magnetic force application unit 150 includes an electromagnet, a current is passed through the coil of the electromagnet to generate a magnetic force. Note that in step S108, the substrate holding and rotation mechanism 120 preferably maintains a low rotation speed of the substrate W. For example, the rotation speed of the substrate W is 10 rpm. By applying a magnetic force to the magnetic fluid, the substances to be removed adhering to the substrate W are suspended in the magnetic fluid.

Even if the magnetic force of the magnetic force application unit 150 itself is constant, the closer the magnetic force application unit 150 is to the magnetic fluid of the substrate W, the stronger the magnetic force that can be applied to the magnetic fluid. The distance between the magnetic force application unit 150 and the upper surface Wa of the substrate W may be 0.1 mm or more and 10 mm or less, 0.5 mm or more and 6 mm or less, or 1 mm or more and 5 mm or less.

In step S110, a rinse liquid is supplied to the substrate W. Specifically, the rinse liquid supply unit 140 supplies the rinse liquid to the substrate W. By supplying the rinse liquid, the magnetic fluid and the objects to be removed can be removed from the substrate W.

Typically, the substrate holding and rotation mechanism 120 stops the rotation of the substrate W and releases its hold on the substrate W. The substrate W is then unloaded from the substrate processing apparatus 100.

According to this embodiment, a magnetic force is applied to a substrate W with a removal target attached thereto while a magnetic fluid is supplied to the substrate W. Because the magnetic susceptibility of the magnetic fluid differs from that of the removal target, the application of the magnetic force acts vertically on the removal target. As a result, the removal target separates from the upper surface Wa of the substrate W and floats within the magnetic fluid. Therefore, according to this embodiment, relatively small removal targets on the substrate can be sufficiently removed.

For example, if the magnetic susceptibility of the magnetic fluid supplied to the substrate W is greater than that of the object to be removed, when the magnetic force application unit 150 applies a magnetic force to the magnetic fluid, the magnetic fluid receives a force in a direction that attracts it to the magnetic force application unit 150, and a flow is formed in which the magnetic fluid flows vertically. As a result, the object to be removed receives a force in a direction that moves it away from the substrate W due to the flow formed in the magnetic fluid, and the object to be removed is detached from the substrate W.

Alternatively, if the magnetic susceptibility of the object to be removed is greater than the magnetic susceptibility of the magnetic fluid supplied to the substrate W, when the magnetic force application unit 150 applies a magnetic force to the magnetic fluid, the object to be removed is subjected to a force that attracts it to the magnetic force application unit 150 within the magnetic fluid. As a result, the object to be removed is subjected to a force in a direction that moves it away from the substrate W, and the object to be removed is detached from the substrate W.

This embodiment is suitable for use on a substrate W after chemical mechanical polishing (CMP).

The material to be removed may be an abrasive used in the CMP process of the substrate W. For example, the material to be removed is CeO or SiO ₂ .

Alternatively, the object to be removed may be particles scraped off from the surface layer of the substrate W. Typically, the surface layer of the substrate W after CMP is formed of a metal, Si, SiO ₂ , SiC, GaN, etc. Examples of metals that form the surface layer of the substrate W after CMP include aluminum, tungsten, copper, cobalt, ruthenium, molybdenum, etc. The surface layer of the substrate W may include a native oxide film.

For example, bmin[FeCl ₄ ] may be used as the magnetic fluid. bmin[FeCl ₄ ] is known as a magnetic ionic liquid with a relatively high magnetic susceptibility. The magnetic susceptibility of bmin[FeCl ₄ ] is 0.0137 emu/mol at room temperature, and the mass magnetization of bmin[FeCl ₄ ] is 40.6×10 ⁻⁶ emu/g at room temperature. The dynamic viscosity of bmin[FeCl ₄ ] is 43 mPas at room temperature.

First, let's consider the effect on iron of a cylindrical neodymium magnet with a diameter of 10 mm and a height of 10 mm. If the magnetic flux density of the neodymium magnet is 0.55 T, the magnetic force acting on iron located 1 mm away from the center of the end face of the cylinder is 0.461 kgf (= 4.5 N).

Next, we consider a case in which a cylindrical neodymium magnet with a diameter of 10 mm and a height of 10 mm is used as the magnetic force application unit 150, bmin[ _FeCl4 ] is used as the magnetic fluid, and _SiO2 particles are present as the object to be removed in the magnetic fluid 1 mm away from the neodymium magnet. The mass magnetization of _SiO2 is 1/100 or less of bmin[ _FeCl4 ], and the magnetization of _SiO2 is negligible compared to the magnetization of bmin[ _FeCl4 ].

Since the magnetic susceptibility of iron considered above is 218 emu/g, when iron is replaced with bmim, the magnetic force acting on bmim can be calculated as 840 nN (=4.5×40.6×10 ⁻⁶ /218) from the ratio of magnetic susceptibilities.

On the other hand, the adhesive force of _SiO2 particles with a particle size of 10 nm to 100 nm that adhere to a substrate is approximately 100 to 1000 nN when measured with an AFM. Therefore, if bmin[ _FeCl4 ] is used as the magnetic fluid together with the neodymium magnet described above, the _SiO2 particles that have adhered to the substrate can be removed by magnetic force.

Furthermore, when the magnetic force generated between the above-mentioned neodymium magnet and bmin[FeCl ₄ ] was calculated as a function of the distance between the neodymium magnet and bmin[FeCl ₄ ], when the distance between the neodymium magnet and bmin[FeCl ₄ ] was 0.5 mm, the magnetic force applied to the object to be removed in the magnetic fluid was approximately 1000 nN, and when this distance was 5 mm, the magnetic force was approximately 100 nN.

Therefore, by using a cylindrical neodymium magnet with a diameter of 10 mm, a height of 10 mm, and a magnetic flux density of 0.55 T as the magnetic force application unit 150, when the distance between the magnetic force application unit 150 and the upper surface Wa of the substrate W is 0.5 mm, a magnetic force of approximately 1000 nN can be applied to the material to be removed in the magnetic fluid (bmin[ _FeCl4 ]) on the upper surface Wa of the substrate W. Similarly, when the distance between the magnetic force application unit 150 and the upper surface Wa of the substrate W is 5 mm, a magnetic force of approximately 100 nN can be applied to the material to be removed ( _SiO2 ) in the magnetic fluid (bmin[ _FeCl4 ]) on the upper surface Wa of the substrate W.

Next, the substrate processing method of this embodiment will be described with reference to Figures 1 to 5. Figures 5(a) to 5(d) are schematic diagrams of the substrate processing method of this embodiment.

As shown in FIG. 5(a), the material to be removed is attached to the substrate W. In this example, the material to be removed is attached to the planarized substrate W.

As shown in FIG. 5(b), magnetic fluid is supplied to the substrate W. In particular, the magnetic fluid supply unit 130 supplies magnetic fluid to the substrate W. Typically, the magnetic fluid supply unit 130 supplies magnetic fluid to the substrate W while the substrate holding and rotation mechanism 120 rotates the substrate W at a relatively low rotation speed.

As shown in FIG. 5(c), a magnetic force is applied to the magnetic fluid while it is present on the upper surface Wa of the substrate W. Specifically, the magnetic force application unit 150 that generates the magnetic force is brought close to the magnetic fluid on the substrate W. The application of the magnetic force causes the objects to be removed to float in the magnetic fluid.

In addition, by bringing the magnetic force application unit 150 closer to the magnetic fluid, a stronger force can be applied to the object to be removed within the magnetic fluid. For example, the distance between the magnetic force application unit 150 and the upper surface Wa of the substrate W may be 0.1 mm or more and 10 mm or less, 0.5 mm or more and 6 mm or less, or 1 mm or more and 5 mm or less.

As shown in FIG. 5(d), the magnetic fluid and the material to be removed are removed from the substrate W. In particular, the rinse liquid supply unit 140 supplies rinse liquid to the substrate W, thereby removing the magnetic fluid and the material to be removed from the upper surface Wa of the substrate W.

As described above, according to this embodiment, removal target materials attached to the substrate W can be removed from the substrate W.

The magnetic force application unit 150 may also apply magnetic force to the entire substrate W at once. This shortens the time required to apply magnetic force to the magnetic fluid.

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 6. Figure 6 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. The substrate processing apparatus 100 of Figure 6 has the same configuration as the substrate processing apparatus 100 described above with reference to Figure 2, except that the magnetic force application unit 150 further includes a magnetic force generator 152 and a movement mechanism 158, and therefore, to avoid redundancy, duplicated descriptions will be omitted.

As shown in FIG. 6 , in the substrate processing apparatus 100, the magnetic force application unit 150 has a magnetic force generator 152 and a movement mechanism 158. The magnetic force generator 152 generates a magnetic force. The magnetic force generator 152 may be a permanent magnet. Alternatively, the magnetic force generator 152 may be an electromagnet. If the magnetic force generator 152 is an electromagnet, when a current is applied to the magnetic force generator 152, the magnetic force generator 152 generates a magnetic force.

The moving mechanism 158 moves the magnetic force generator 152. When the magnetic force application unit 150 applies a magnetic force to the magnetic fluid, the moving mechanism 158 moves the magnetic force generator 152 to a position facing the upper surface Wa of the substrate W. After the magnetic force application unit 150 applies a magnetic force to the magnetic fluid, the moving mechanism 158 moves the magnetic force generator 152 from the position facing the upper surface Wa of the substrate W to a retracted position.

The magnetic force generator 152 is ring-shaped. For example, the magnetic force generator 152 is annular. A through-hole 152h is provided in the magnetic force generator 152. The through-hole 152h is circular.

The outer diameter of the magnetic force generator 152 is approximately equal to the diameter of the substrate W. For example, the outer diameter of the magnetic force generator 152 is 90% or more and 110% or less of the diameter of the substrate W.

The inner diameter of the magnetic force generator 152 (outer diameter of the through-hole 152h) is approximately equal to or slightly larger than the outer diameter (horizontal length) of the nozzle 136. For example, the inner diameter of the magnetic force generator 152 is 102% or more and 110% or less of the diameter of the substrate W. In this case, the nozzle 136 ejects magnetic fluid onto the substrate W while inserted into the through-hole 152h of the magnetic force generator 152.

Alternatively, the inner diameter of the magnetic force generator 152 may be smaller than the outer diameter (horizontal length) of the nozzle 136. For example, the inner diameter of the magnetic force generator 152 may be smaller than the outer diameter (horizontal length) of the nozzle 136 and larger than the width (horizontal length) of the magnetic fluid ejected from the nozzle 136. In this case, the nozzle 136 ejects the magnetic fluid onto the substrate W from a position vertically above the magnetic force generator 152.

The moving mechanism 158 moves the magnetic force generator 152 to the upper surface Wa of the substrate W. Typically, when applying a magnetic force to the magnetic fluid supplied to the substrate W, the moving mechanism 158 moves the magnetic force generator 152 to a position facing the upper surface Wa of the substrate W. For example, the distance between the magnetic force application unit 150 and the upper surface Wa of the substrate W may be 0.1 mm or more and 10 mm or less, 0.5 mm or more and 6 mm or less, or 1 mm or more and 5 mm or less.

The moving mechanism 158 also moves the magnetic force generator 152 from the top surface of the substrate W. Typically, the moving mechanism 158 applies a magnetic force to the magnetic fluid supplied to the substrate W, and then moves the magnetic force generator 152 from the top surface of the substrate W to a retracted position.

The movement mechanism 158 has an arm 158a, a shaft 158b, and a drive unit 158c. The arm 158a, shaft 158b, and drive unit 158c of the movement mechanism 158 have the same configuration as the arm 138a, shaft 138b, and drive unit 138c of the movement mechanism 138. Therefore, a detailed description of the arm 158a, shaft 158b, and drive unit 158c will be omitted.

In the substrate processing apparatus 100 shown in FIG. 6, the magnetic force application unit 150 applies magnetic force to the entire surface of the substrate W at once, but this embodiment is not limited to this. The magnetic force application unit 150 may also apply magnetic force while scanning the substrate W.

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 7. Figure 7 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. The substrate processing apparatus 100 of Figure 7 has the same configuration as the substrate processing apparatus 100 described above with reference to Figure 6, except for the shape of the magnetic force generator 152, and therefore, to avoid redundancy, duplicated descriptions will be omitted.

As shown in FIG. 7 , in the substrate processing apparatus 100, the outer diameter (length along the horizontal direction) of the magnetic force generator 152 is smaller than the radius of the substrate W. For example, the outer diameter (length along the horizontal direction) of the magnetic force generator 152 is 5% or more and 30% or less of the radius of the substrate W.

When applying a magnetic force to the magnetic fluid, the magnetic force generator 152 scans the upper surface Wa of the substrate W. For example, the magnetic force generator 152 may scan the upper surface Wa of the substrate W from the center of the substrate W toward the radially outward direction. In this case, the moving mechanism 158 moves the magnetic force generator 152 from the center of the substrate W toward the radially outward direction while bringing it close to the upper surface Wa of the substrate W to a predetermined distance.

Alternatively, the magnetic force generator 152 may scan the upper surface Wa of the substrate W from the radial outside of the substrate W toward the center. In this case, the movement mechanism 158 moves the magnetic force generator 152 from the radial outside of the substrate W toward the center while keeping it close to the upper surface Wa of the substrate W by a predetermined distance. When the magnetic force generator 152 approaches the center of the substrate W, the magnetic force generator 152 stops. Thereafter, the magnetic force generator 152 rises in a direction away from the upper surface Wa of the substrate W and returns to the retracted position.

In this embodiment, the magnetic force generator 152 scans the upper surface Wa of the substrate W, so that not only a vertical force but also a diagonally upward force acts on the object to be removed. In this way, by scanning the magnetic force generator 152, a force can be applied to the object to be removed diagonally upward, so the object to be removed can be sufficiently removed. In particular, if the object to be removed is present in a space or recess in the substrate W, the object to be removed can be efficiently removed from the substrate W by scanning the magnetic force generator 152.

In the above description with reference to Figures 1 to 7, the removal target material adhering to the substrate W is peeled off from the substrate W by applying a magnetic force to the magnetic fluid on the substrate W, but this embodiment is not limited to this. In addition to applying a magnetic force to the magnetic fluid on the substrate W, the removal target material adhering to the substrate W may also be peeled off from the substrate W by supplying a mixed fluid to the substrate W.

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 8. Figure 8 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. The substrate processing apparatus 100 of Figure 8 has the same configuration as the substrate processing apparatus 100 described above with reference to Figure 2, except that it further includes a mixed fluid supply unit 160, and therefore, to avoid redundancy, duplicated descriptions will be omitted.

As shown in FIG. 8 , the substrate processing apparatus 100 further includes a mixed fluid supply unit 160. The mixed fluid supply unit 160 supplies a mixed fluid of gas and liquid to the substrate W. The mixed fluid supply unit 160 forms mist by mixing the gas and liquid.

The mixed fluid supply unit 160 may generate a mixed fluid by mixing gas and liquid inside the mixed fluid supply unit 160. Alternatively, the mixed fluid supply unit 160 may generate a mixed fluid by mixing gas and liquid outside the mixed fluid supply unit 160 (e.g., on the upper surface Wa of the substrate W).

Here, the mixed fluid supply unit 160 includes a pipe 162a, a valve 164a, a pipe 162b, a valve 164b, a nozzle 166, and a movement mechanism 168. A liquid is supplied to the pipe 162a from a supply source. For example, the liquid is water. Alternatively, the liquid may be any of the components exemplified as the rinse liquid. The pipe 162a connects the supply source to the nozzle 166. The valve 164a opens and closes the flow path within the pipe 162a.

Gas is supplied to pipe 162b from a supply source. For example, the gas is nitrogen gas. The gas may also be an inert gas other than nitrogen or dry air. Pipe 162b connects the supply source to nozzle 166. Valve 164b opens and closes the flow path within pipe 162b.

Liquid is supplied to the nozzle 166 via the pipe 162b, and gas is also supplied via the pipe 162b. As a result, a mixed fluid of liquid and gas is generated in the nozzle 166. The nozzle 166 ejects the mixed fluid onto the upper surface Wa of the substrate W. It is preferable that the nozzle 166 be configured to be movable relative to the substrate W.

The moving mechanism 168 has an arm 168a, a shaft 168b, and a drive unit 168c. The arm 168a, shaft 168b, and drive unit 168c of the moving mechanism 168 have the same configuration as the arm 138a, shaft 138b, and drive unit 138c of the moving mechanism 138. Therefore, a detailed description of the arm 168a, shaft 168b, and drive unit 168c will be omitted.

The substrate processing apparatus 100 of this embodiment can apply a magnetic force to the magnetic fluid supplied to the substrate W and supply a mixed fluid to the substrate W. By applying a magnetic force to the magnetic fluid supplied to the substrate W, relatively small objects to be removed on the substrate W can be effectively removed. On the other hand, if the size of the objects to be removed is relatively large, the magnetic force may not be able to remove the objects unless the magnetic flux density of the magnetic force application unit 150 is large. However, if the magnetic flux density of the magnetic force application unit 150 is too large, the substrate W may be affected.

The substrate processing apparatus 100 of this embodiment supplies a mixed fluid to the substrate W, and therefore can effectively remove objects to be removed from the substrate W. For example, the mixed fluid can effectively remove relatively large objects to be removed from the substrate W. When the mixed fluid is supplied to the substrate W, the radial flow intensity of the mixed fluid increases with increasing distance from the upper surface Wa of the substrate W, and therefore the mixed fluid can remove relatively large objects to be removed.

Next, the substrate processing method of this embodiment will be described with reference to Figures 1 to 9. Figure 9 is a flow diagram of the substrate processing method. The flow diagram in Figure 9 is similar to the substrate processing method described above with reference to Figure 4, except for the addition of step S105 of supplying a mixed fluid, and therefore, to avoid redundancy, duplicated explanations will be omitted.

As shown in FIG. 9, in step S102, the substrate W is held. Specifically, the substrate holding and rotation mechanism 120 holds the substrate W.

In step S104, the substrate W is rotated while being held. In detail, the substrate holding and rotation mechanism 120 rotates the substrate W while holding it.

In step S105, the mixed fluid is supplied to the substrate W. Specifically, the mixed fluid supply unit 160 supplies the mixed fluid to the substrate W.

In step S106, magnetic fluid is supplied to the substrate W. Specifically, the magnetic fluid supply unit 130 supplies magnetic fluid to the substrate W.

In step S108, a magnetic force is applied to the magnetic fluid of the substrate W. Specifically, the magnetic force application unit 150 is brought closer to the magnetic fluid of the substrate W. Alternatively, if the magnetic force application unit 150 includes an electromagnet, the supply of power to the electromagnet may be started.

When the magnetic force application unit 150 applies a magnetic force to the magnetic fluid of the substrate W, the magnetic fluid is subjected to a magnetic force, which causes the magnetic fluid to be forced closer to the magnetic force application unit 150. As a result, the magnetic fluid is subjected to a force acting in the vertical direction in addition to the centrifugal force acting in the horizontal direction caused by the rotation of the substrate W by the substrate holding and rotation mechanism 120.

In step S110, a rinse liquid is supplied to the substrate W. In particular, by the rinse liquid supply unit 140 supplying the rinse liquid to the substrate W, the magnetic fluid can be removed from the substrate W along with the objects to be removed, and the upper surface Wa of the substrate W can be rinsed.

The substrate processing apparatus 100 of this embodiment can apply a magnetic force to the magnetic fluid supplied to the substrate W and can also supply a mixed fluid to the substrate W. By applying a magnetic force to the magnetic fluid supplied to the substrate W, relatively small objects to be removed on the substrate W can be effectively removed. Furthermore, by supplying a mixed fluid to the substrate W, relatively large objects to be removed on the substrate W can be effectively removed.

In the flow diagram shown in FIG. 9, the mixed fluid is supplied in step S105 before the magnetic fluid is supplied in step S106, but this embodiment is not limited to this. The mixed fluid may be supplied in step S105 after the magnetic fluid is supplied in step S106.

Next, the substrate processing method of this embodiment will be described with reference to Figures 1 to 10. Figures 10(a) to 10(e) are schematic diagrams of the substrate processing method of this embodiment.

As shown in Figure 10(a), objects to be removed are attached to the substrate W. Here, objects to be removed of different sizes are attached to the substrate W.

As shown in FIG. 10(b), the mixed fluid is supplied to the substrate W. In particular, the mixed fluid supply unit 160 supplies the mixed fluid to the upper surface Wa of the substrate W. Typically, by supplying the mixed fluid, relatively large removal targets adhering to the upper surface Wa of the substrate W can be removed.

As shown by the arrows in Figure 10(b), the radial flow intensity of the mixed fluid is quite small near the upper surface Wa of the substrate W and gradually increases with increasing distance from the upper surface Wa of the substrate W. For this reason, while the mixed fluid can wash away relatively large objects to be removed, it cannot wash away relatively small objects to be removed. For example, if the size of the objects to be removed is 20 nm or less, supplying the mixed fluid may not be enough to sufficiently remove the objects to be removed.

As shown in FIG. 10(c), a magnetic fluid is supplied to the substrate W. Specifically, the magnetic fluid supply unit 130 supplies the magnetic fluid to the upper surface Wa of the substrate W.

As shown in FIG. 10(d), a magnetic force is applied to the magnetic fluid while it is present on the substrate W. In detail, the magnetic force application unit 150 applies a magnetic force to the magnetic fluid on the upper surface Wa of the substrate W. For example, the magnetic force generator 152 approaches the magnetic fluid on the upper surface Wa of the substrate W.

As shown in FIG. 10(e), the magnetic fluid and the objects to be removed are removed from the upper surface Wa of the substrate W. Specifically, the rinse liquid supply unit 140 supplies rinse liquid to the substrate W.

According to this embodiment, a magnetic force can be applied to the magnetic fluid supplied to the substrate W, and a mixed fluid can also be supplied to the substrate W. By applying a magnetic force to the magnetic fluid supplied to the substrate W, relatively small objects to be removed on the substrate W can be suitably removed. Furthermore, by supplying a mixed fluid to the substrate W, relatively large objects to be removed on the substrate W can be suitably removed.

The upper surface Wa of the substrate W may be provided with a plurality of grooves. The substrate W may also have a patterned shape. In this case, the substrate processing apparatus 100 preferably supplies the remover liquid after supplying the rinse liquid to prevent the pattern from collapsing.

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 11. Figure 11 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. The substrate processing apparatus 100 of Figure 11 has the same configuration as the substrate processing apparatus 100 described above with reference to Figure 8, except that it further includes a removal liquid supply unit 170, and therefore, to avoid redundancy, duplicated descriptions will be omitted.

As shown in FIG. 11, the substrate processing apparatus 100 further includes a removing liquid supply unit 170. The removing liquid supply unit 170 supplies a removing liquid to the substrate W. The removing liquid is a liquid for removing the rinse liquid. By supplying the removing liquid to the substrate W, the rinse liquid is replaced with the removing liquid. The removing liquid is preferably a liquid that is more volatile than the rinse liquid. The removing liquid is preferably compatible with the rinse liquid.

For example, the removal liquid is an organic solvent. Examples of organic solvents include liquids containing at least one of IPA, HFE (hydrofluoroether), methanol, ethanol, acetone, PGEE (propylene glycol monoethyl ether), and trans-1,2-dichloroethylene.

The removal liquid supply unit 170 includes a pipe 172, a valve 174, a nozzle 176, and a movement mechanism 178. The removal liquid is supplied to the pipe 172 from a supply source. The valve 174 opens and closes the flow path within the pipe 172. The nozzle 176 is connected to the pipe 172. The nozzle 176 ejects the removal liquid onto the upper surface Wa of the substrate W. It is preferable that the nozzle 176 be configured to be movable relative to the substrate W.

Typically, while the removing liquid supply unit 170 supplies the removing liquid to the substrate W, the substrate holding and rotating mechanism 120 rotates while holding the substrate W. As the substrate W rotates, the removing liquid supplied to the substrate W from the removing liquid supply unit 170 flows radially outward on the substrate W.

The movement mechanism 178 has an arm 178a, a shaft 178b, and a drive unit 178c. The arm 178a, shaft 178b, and drive unit 178c of the movement mechanism 178 have the same configuration as the arm 138a, shaft 138b, and drive unit 138c of the movement mechanism 138. Therefore, a detailed description of the arm 178a, shaft 178b, and drive unit 178c will be omitted.

Next, the substrate processing method of this embodiment will be described with reference to Figures 1 to 12. Figure 12 is a flow diagram of the substrate processing method of this embodiment.

As shown in FIG. 12, in step Sa, a substrate W is loaded into the substrate processing apparatus 100. Specifically, the substrate W is loaded into the chamber 110.

In step Sb, the substrate W is held in the substrate processing apparatus 100. Specifically, the substrate holding and rotation mechanism 120 holds the substrate W in the chamber 110.

In step Sc, the substrate processing apparatus 100 rotates the substrate W. Specifically, the substrate holding and rotation mechanism 120 begins rotating the substrate W within the chamber 110.

In step Sd, the substrate processing apparatus 100 supplies the mixed fluid to the substrate W. Specifically, the mixed fluid supply unit 160 supplies the mixed fluid to the substrate W.

In step Se, the substrate processing apparatus 100 supplies magnetic fluid to the substrate W. Specifically, the magnetic fluid supply unit 130 supplies magnetic fluid to the substrate W.

In step Sf, the substrate processing apparatus 100 applies a magnetic force to the substrate W. For example, the magnetic force application unit 150 is brought closer to the substrate W. By applying the magnetic force, the object to be removed is detached from the upper surface Wa of the substrate W and suspended in the magnetic fluid.

In step Sg, the substrate processing apparatus 100 supplies a rinse liquid to the substrate W. Specifically, the rinse liquid supply unit 140 supplies the rinse liquid to the substrate W. By supplying the rinse liquid, the magnetic fluid and the objects to be removed are removed from the substrate W.

In step Sh, the substrate processing apparatus 100 supplies the removing liquid to the substrate W. Specifically, the removing liquid supply unit 170 supplies the removing liquid to the substrate W. By supplying the removing liquid, the rinsing liquid on the substrate W is replaced with the removing liquid.

In step Si, the substrate processing apparatus 100 spin-dries the substrate W, thereby drying the removal liquid from the substrate W. For example, the substrate holding and rotation mechanism 120 increases the rotation speed of the substrate W. In one example, the substrate holding and rotation mechanism 120 increases the rotation speed of the substrate W from 300 rpm to 1500 rpm.

In step Sj, the substrate processing apparatus 100 unloads the substrate W. For example, the substrate holding and rotation mechanism 120 stops rotating the substrate W and releases its hold on the substrate W. The center robot CR then removes the substrate W from the chamber 110. The substrate W is then unloaded outside the substrate processing system 10 via the indexer robot IR.

As described above, according to this embodiment, the target material can be sufficiently removed from the substrate W transported to the substrate processing apparatus 100.

In the above description, the substrate processing apparatus 100 of this embodiment processes a substrate W after CMP processing, but this embodiment is not limited to this. The substrate processing apparatus 100 of this embodiment may also process a substrate after processing other than CMP processing.

For example, the substrate processing apparatus 100 of this embodiment may process a substrate W after dry etching. For example, the surface layer of the substrate W after dry etching is formed of a low-k film, TiN, SiO ₂ , Si, SiN, SiC, or Poly-Si. In this case, too, objects to be removed from the surface layer of the substrate W may remain on the substrate W. The objects to be removed may be particles scraped off from the surface layer of the substrate W.

The above describes embodiments of the present invention with reference to the drawings. However, the present invention is not limited to the above embodiments and can be embodied in various forms without departing from the spirit of the present invention. Furthermore, various inventions can be created by appropriately combining multiple components disclosed in the above embodiments. For example, some components may be omitted from all of the components shown in the embodiments. Furthermore, components from different embodiments may be appropriately combined. The drawings primarily show each component diagrammatically to facilitate understanding, and the thickness, length, number, spacing, etc. of each illustrated component may differ from the actual components due to the convenience of the drawings. Furthermore, the materials, shapes, dimensions, etc. of each component shown in the above embodiments are merely examples and are not particularly limited, and various modifications are possible within a scope that does not substantially deviate from the effects of the present invention.

The present invention is suitable for use in substrate processing apparatuses and substrate processing methods.

REFERENCE SIGNS LIST 100 Substrate processing apparatus 110 Chamber 120 Substrate holding and rotating mechanism 130 Magnetic fluid supply unit 140 Rinse liquid supply unit 150 Magnetic force application unit W Substrate

Claims (10)

a substrate holding and rotating mechanism that holds the substrate in a horizontal direction and rotates the substrate;
a magnetic fluid supply unit that supplies a magnetic fluid to the substrate held by the substrate holding and rotating mechanism;
a magnetic force applying unit that applies a magnetic force to the magnetic fluid supplied to the substrate;
a rinse liquid supply unit that supplies a rinse liquid to the substrate to remove the magnetic fluid from the substrate;
a control unit that controls the substrate holding and rotating mechanism, the magnetic fluid supply unit, the magnetic force application unit, and the rinse liquid supply unit ,
The magnetic force applying unit
a magnetic force generator that generates a magnetic force;
a moving mechanism that moves the magnetic force generator;
Equipped with
The control unit controls the magnetic fluid supply unit and the moving mechanism so that the magnetic force generator approaches the substrate while the magnetic fluid supply unit supplies the magnetic fluid to the substrate . The substrate processing apparatus according to claim 1 , wherein the control unit controls the moving mechanism so that the magnetic force generator is positioned at a distance of 0.1 mm to 10 mm from the substrate. a substrate holding and rotating mechanism that holds the substrate in a horizontal direction and rotates the substrate;
a magnetic fluid supply unit that supplies a magnetic fluid to the substrate held by the substrate holding and rotating mechanism;
a magnetic force applying unit that applies a magnetic force to the magnetic fluid supplied to the substrate;
a rinse liquid supply unit that supplies a rinse liquid to the substrate to remove the magnetic fluid from the substrate;
a control unit that controls the substrate holding and rotating mechanism, the magnetic fluid supply unit, the magnetic force application unit, and the rinse liquid supply unit;
a mixed fluid supply unit that supplies a mixed fluid obtained by mixing a liquid and a gas to the substrate;
A substrate processing apparatus comprising : The substrate processing apparatus according to claim 3 , wherein the control unit controls the fluid mixture supply unit so that the fluid mixture supply unit supplies the fluid mixture to the substrate before the magnetic fluid supply unit supplies the magnetic fluid to the substrate. The substrate processing apparatus according to claim 1 , wherein the magnetic fluid supply unit supplies a magnetic ionic liquid as the magnetic fluid. a substrate holding step of holding the substrate in a horizontal direction;
a substrate rotating step of rotating the substrate held in the substrate holding step;
a magnetic fluid supplying step of supplying a magnetic fluid to the substrate rotating in the substrate rotating step;
a magnetic force applying step of applying a magnetic force to the magnetic fluid supplied to the substrate in the magnetic fluid supplying step;
a rinse liquid supply step of removing the magnetic fluid from the substrate by supplying a rinse liquid to the substrate ;
The magnetic force applying step includes:
a moving step of moving a magnetic force generator so as to approach the substrate while the magnetic fluid is being supplied to the substrate in the magnetic fluid supplying step;
a magnetic force generating step in which the magnetic force generator generates a magnetic force after the magnetic force generator has moved in the moving step;
A substrate processing method comprising : 7. The substrate processing method according to claim 6 , wherein in the moving step, the magnetic force generator moves a distance of 0.1 mm to 10 mm relative to the substrate. a substrate holding step of holding the substrate in a horizontal direction;
a substrate rotating step of rotating the substrate held in the substrate holding step;
a magnetic fluid supplying step of supplying a magnetic fluid to the substrate rotating in the substrate rotating step;
a magnetic force applying step of applying a magnetic force to the magnetic fluid supplied to the substrate in the magnetic fluid supplying step;
a rinse liquid supply step of removing the magnetic fluid from the substrate by supplying a rinse liquid to the substrate;
a mixed fluid supplying step of supplying a mixed fluid obtained by mixing a liquid and a gas onto the substrate;
A substrate processing method comprising : The substrate processing method according to claim 8 , wherein the mixed fluid supplying step supplies the mixed fluid to the substrate before the magnetic fluid is supplied to the substrate in the magnetic fluid supplying step. 10. The substrate processing method according to claim 6 , wherein the magnetic fluid supplying step includes a step of supplying a magnetic ionic liquid as the magnetic fluid.