[go: up one dir, main page]

JPH04133027A - Liquid crystal device - Google Patents

Liquid crystal device

Info

Publication number
JPH04133027A
JPH04133027A JP25657190A JP25657190A JPH04133027A JP H04133027 A JPH04133027 A JP H04133027A JP 25657190 A JP25657190 A JP 25657190A JP 25657190 A JP25657190 A JP 25657190A JP H04133027 A JPH04133027 A JP H04133027A
Authority
JP
Japan
Prior art keywords
liquid crystal
electric field
electrodes
carbon film
atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25657190A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
舜平 山崎
Shigenori Hayashi
茂則 林
Akira Mase
晃 間瀬
Toshimitsu Konuma
利光 小沼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP25657190A priority Critical patent/JPH04133027A/en
Publication of JPH04133027A publication Critical patent/JPH04133027A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)

Abstract

PURPOSE:To obtain the effective critical electric field and to improve a contrast by providing a carbon film on electrodes and further forming display unit picture element electrodes consisting of transparent conductive film on the carbon film. CONSTITUTION:The electrodes 3 are provided on the 1st substrate 2 consisting of polyethylene terephthalate. The carbon film 4 consisting of a non-single crystal material consisting of carbon atoms, hydrogen atoms and nitrogen atoms as essential texture forming elements is provided on the electrodes 3. Further, the picture element electrodes 5 are provided by using the transparent conductive film consisting of a material contg. at least one among indium oxide, zinc oxide and tin oxide on the carbon film 4. The greater part of the electric field is applied on the ferroelectric liquid crystal 1 when the large electric field is applied and on the element consisting of the electrodes 3, the carbon film 4 and the picture element electrodes 5 when the small electric field is applied.

Description

【発明の詳細な説明】 「発明の利用分野」 この発明は、液晶の代表例の1っであるスメクチック液
晶、特に強誘電性液晶(以下FLCという)を用いた液
晶装置に関し、マイクロ・コンピュータ、ワードプロセ
ッサまたはテレヒ等の表示部の薄膜化を図る液晶装置、
さらにディスクメモリ等のメモリ装置、スピーカ等の音
響機器へ応用する液晶装置に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of Application of the Invention The present invention relates to a liquid crystal device using a smectic liquid crystal, which is one of the representative examples of liquid crystal, particularly a ferroelectric liquid crystal (hereinafter referred to as FLC), and relates to a microcomputer, Liquid crystal devices that aim to make the display parts of word processors, television stations, etc. thinner,
Furthermore, the present invention relates to a liquid crystal device applied to memory devices such as disk memories, and audio equipment such as speakers.

「従来技術」 従来、液晶を用いて液晶装置を作製せんとする場合、こ
の液晶の一対の基板の内側に一対の電極を設け、その電
極上に対称配向膜を設ける方式か知られている。
"Prior Art" Conventionally, when manufacturing a liquid crystal device using liquid crystal, a method is known in which a pair of electrodes is provided inside a pair of substrates of the liquid crystal, and a symmetrical alignment film is provided on the electrodes.

しかし、かかる単純マトリックス構造または各画素に非
線型素子か直列に連結されたアクティブ素子構造におい
て、最も重要な要素として、前記したスメクチック液晶
が十分大きいEc(臨界電界またはスレッシュホールド
電界)を有することか重要である。このEcは液晶か所
定の電界以下ては初期の状態(例えば非透過)を維持し
、所定の電界以上においてきわめて急峻に反転し、他の
状態(例えば透過)を呈する現象、およびこの逆に透過
より非透過となる現象をいう。即ち、二のEcはEc+
(正に電界を加える場合に観察される臨界電界)と、逆
にEc−(負に電界を加える場合に存在する電界)とか
ある。このEc+とEc−は必ずしも絶対値において同
してはないか、液晶に接する配向処理のプロセス条件に
より概ね一致させることができるかその制御はきわめて
むつかしい。
However, in such a simple matrix structure or an active element structure in which a nonlinear element is connected in series to each pixel, the most important element is that the smectic liquid crystal described above has a sufficiently large Ec (critical electric field or threshold electric field). is important. This Ec is a phenomenon in which the liquid crystal maintains its initial state (for example, non-transmissive) below a predetermined electric field, reverses extremely sharply and assumes another state (for example, transmissive) when the electric field exceeds a predetermined electric field, and vice versa. This refers to a phenomenon that becomes more opaque. That is, the second Ec is Ec+
(critical electric field observed when a positive electric field is applied) and Ec- (an electric field that exists when a negative electric field is applied). It is extremely difficult to control whether Ec+ and Ec- are not necessarily the same in absolute value, or can be made approximately equal depending on the process conditions of the alignment treatment in contact with the liquid crystal.

しかしかかるEc+とEc−は液晶それ自体においては
きわめてその存在か乏しく、特にカイラルスメクチック
C相を用いる強誘電性液晶においては、この液晶を印加
するパルス電界の電界強度とそのパルス巾との値に大き
く依存している。そのためマトリックス表示においては
rACバイアス法」として知られている励起方式を用い
なければならないし、正方向に書換えんとする時は一度
負のパルスを加え、次に正のパルスを所定の電界強度と
時間とを精密に制御して加える。また逆に負方向に書き
換えんとする場合も、−変圧のパルスを加え、次に負の
パルスを所定の電界強度と時間との精密な制御のもとに
加えなければならない。
However, such Ec+ and Ec- are extremely scarce in the liquid crystal itself, and in particular in a ferroelectric liquid crystal using a chiral smectic C phase, the value of the electric field strength and pulse width of the pulsed electric field applied to this liquid crystal is It depends a lot. Therefore, in matrix display, an excitation method known as the "rAC bias method" must be used, and when rewriting in the positive direction, a negative pulse is applied once, and then a positive pulse is applied with a predetermined electric field strength. Add time with precise control. Conversely, when rewriting in the negative direction is desired, a pulse of -transformation must be applied, and then a negative pulse must be applied under precise control of predetermined electric field strength and time.

「発明か解決しようとする問題点」 かくの如き液晶、特に強誘電性液晶を用いんとした時、
これまでの技術では前記した如きrAcバイアス法」、
「2周波駆動」等を用いなけれはならない。前者のrA
Cバイアス法」は大きな電界の書き込みパルスとともに
、非選択時のACバイアスパルスを加えることになる。
``Problems to be solved by invention'' When trying to use such liquid crystals, especially ferroelectric liquid crystals,
The conventional technology is the rAc bias method as described above.
"Two-frequency drive" or the like must be used. The former rA
The "C bias method" applies an AC bias pulse during non-selection in addition to a write pulse with a large electric field.

本駆動方法を行う場合、液晶材料自体に安定した双安定
性、メモリー性か必要とされている。もしも、それらか
充分て無い場合、非選択時のACバイアスパルスにより
、コントラストの低下か発生する。
When using this driving method, the liquid crystal material itself needs to have stable bistability and memory properties. If there are not enough of them, the AC bias pulse during non-selection will cause a decrease in contrast.

また、安定した双安定性、メモリー性を持った液晶材料
でも、同時に他の諸特性(応答速度、温度範囲等)を満
足できるものか無かったのか実情である。
Furthermore, even liquid crystal materials with stable bistability and memory properties may or may not simultaneously satisfy other properties (response speed, temperature range, etc.).

「2周波駆動」は周辺回路がきわめて複雑になってしま
うため、デイスプレィ装置とした時、これよりも簡単な
周辺回路が求められている。
Since "two-frequency drive" requires extremely complex peripheral circuits, there is a need for simpler peripheral circuits when used in display devices.

本発明はかかる強誘電性液晶を用いた場合、液晶それ自
体にEcを存することを求めるのではなく、この液晶と
電極上の炭素被膜、画素電極とを一体物とみなし、その
全体で実質的に有効なEcを得んとしたものである。
When such a ferroelectric liquid crystal is used, the present invention does not require that the liquid crystal itself has Ec, but considers the liquid crystal, the carbon film on the electrode, and the pixel electrode as an integrated entity, and the entire structure substantially The purpose was to obtain an effective Ec.

「問題を解決するための手段」 第一の基板のポリエチレンテレフタレー)(PET)上
に電極およびリードを設け、それに炭素原子および水素
原子、窒素原子を主な組織形成元素とする非単結晶材料
よりなる炭素被膜を設けるさらに、その上部に酸化イン
ジニウム、酸化亜鉛、酸化錫の内、少なくとも1つを含
む材料よりなる透明性導電膜によって表示単位電極(画
素)を設ける。この構造による素子は非線型の抵抗(イ
ンピーダンス)を有し、大きな電界(書き込みパルス)
が加わった際は液晶材料に、小さな電界か加わった際に
は本素子に大半の電界かかかる様になっている。
"Means for solving the problem" Electrodes and leads are provided on the first substrate, polyethylene terephthalate (PET), and a non-single crystal material containing carbon atoms, hydrogen atoms, and nitrogen atoms as the main structure-forming elements. Further, a display unit electrode (pixel) is provided on top of the carbon film using a transparent conductive film made of a material containing at least one of indium oxide, zinc oxide, and tin oxide. Elements with this structure have nonlinear resistance (impedance) and a large electric field (write pulse).
When a small electric field is applied, most of the electric field is applied to the liquid crystal material, and when a small electric field is applied, most of the electric field is applied to the device.

その縦断面図を第1図に示す。A longitudinal cross-sectional view is shown in FIG.

第1図において強誘電性液晶(FLCXI)、第一の基
板(2)、第一の基板上の電極およびリード(3)DL
C被膜(4)、画素電極(5)、配向膜(6)、さらに
第二の基板(7)、および第二の基板上の電極およびリ
ード(8)を有する。
In Figure 1, a ferroelectric liquid crystal (FLCXI), a first substrate (2), electrodes and leads (3) on the first substrate DL
It has a C coating (4), a pixel electrode (5), an alignment film (6), a second substrate (7), and electrodes and leads (8) on the second substrate.

第2図は本非線型素子の電気特性を示す。FIG. 2 shows the electrical characteristics of this nonlinear element.

この電気特性から判断するに、本素子はプール・フルン
ケル放出による伝導となり、 I=αVexp (β/V)、、(9)(9)式中の係
数α、βは、温度を係数に持ちαは素子面積と、炭素被
膜の厚みに比例し、βは非線型性を表すものである。
Judging from this electrical characteristic, this device conducts by Poole-Fronkel emission, I=αVexp (β/V), (9) The coefficients α and β in equation (9) have temperature as a coefficient, and α is proportional to the element area and the thickness of the carbon film, and β represents nonlinearity.

この様な非線型性をもった素子と強誘電性液晶を電気的
に直列に接続した場合、図3(a)に示した信号波形を
加えた場合、液晶にかかる電界と素子にかかる電界は、
図3(b)に示す様な波形となる。当然のことながら、
素子か無い場合は、図3(a)の電界かそのままかかる
ことになる。
When an element with such nonlinearity and a ferroelectric liquid crystal are electrically connected in series, and when the signal waveform shown in Figure 3(a) is applied, the electric field applied to the liquid crystal and the electric field applied to the element are ,
The waveform becomes as shown in FIG. 3(b). As a matter of course,
If there is no element, the electric field shown in FIG. 3(a) will be applied as is.

以下に本発明の実施例を示す。Examples of the present invention are shown below.

r実施例」 ポリエチレンテレフタレー) (PET)フィルム上に
、スパッタ法によりモリブデンを0.2ミクロン成膜の
後、フォトリソ法を用いて電極およびリードを作製した
Example 1 After forming a 0.2 micron film of molybdenum on a polyethylene terephthalate (PET) film by sputtering, electrodes and leads were fabricated using photolithography.

その後、 [ガス流量] C2H420SCCM H2380SCCM NF310 SCCM [RFパワー] 0 W 電極面積9m2 [放電圧力1 0.0075 Torr の条件によるプラズマCVD法によって、炭素被膜を成
膜した。
Thereafter, a carbon film was formed by a plasma CVD method under the following conditions: [Gas flow rate] C2H420SCCM H2380SCCM NF310 SCCM [RF power] 0 W Electrode area 9 m2 [Discharge pressure 1 0.0075 Torr].

その後、DCスパッタ法によって、酸化インジニウム・
酸化錫膜を0.1ミクロン成膜し、)オドリソ法により
、画素電極を形成後、ポリイミドを塗布、ラビングを行
い第一の基板とした。
After that, by DC sputtering method, indium oxide
A tin oxide film was formed to a thickness of 0.1 micron, a pixel electrode was formed by the odolithography method, and then polyimide was applied and rubbed to obtain a first substrate.

ガラス基板上に、DCスパッタ法によって、酸化インジ
ニウム・酸化錫膜を0.1ミクロン成膜し、フォトリソ
法により、電極を形成し、第二の基板とした。
A 0.1 micron indium oxide/tin oxide film was formed on a glass substrate by DC sputtering, and electrodes were formed by photolithography to obtain a second substrate.

第二の基板上に2.5ミクロンの径をもつエポキシ樹脂
球を散布し、かつその周囲にエポキシ樹脂の接着剤をス
クリーン印刷を行い、第一の基板と重ね合わせて、加圧
、加熱により、セルを形成した。
Spread epoxy resin spheres with a diameter of 2.5 microns on the second substrate, screen print epoxy resin adhesive around them, overlap them with the first substrate, and apply pressure and heat to , formed a cell.

その後、強誘電性を示す液晶組成物をセル内に注入し、
液晶装置を得た。
After that, a liquid crystal composition exhibiting ferroelectricity is injected into the cell,
Obtained a liquid crystal device.

「効果」 図3に示した様に、炭素被膜による素子を液晶と電気的
に直列接続した場合、液晶にかかる信号電界の内、AC
バイアスパルスの大半は本素子にかかるため、ACバイ
アスパルスにより液晶分子か動作することを、抑えてい
る。その結果、コントラストの向上をもたらした。本発
明の実施において、炭素被膜素子を使わない液晶装置で
はコントラスト比15であったものか、30まで向上し
たことを確認している。その効果を図4に示す。
"Effect" As shown in Figure 3, when a carbon film element is electrically connected in series with a liquid crystal, the AC
Since most of the bias pulse is applied to this device, the action of the liquid crystal molecules due to the AC bias pulse is suppressed. As a result, the contrast was improved. In implementing the present invention, it has been confirmed that the contrast ratio of a liquid crystal device that does not use a carbon film element was improved from 15 to 30. The effect is shown in FIG.

また、炭素被膜素子を使わない液晶装置では、ある任意
の温度において、最大コントラストを得る最適バイアス
値は1点てあったか、炭素被膜素子をつけたものでは、
約15V前後の幅をもち、これによって駆動回路の簡素
化かはかれた。図5に最適バイアス特性のグラフを示す
In addition, in a liquid crystal device that does not use a carbon film element, the optimum bias value for obtaining maximum contrast at a certain arbitrary temperature is one point, or in a liquid crystal device with a carbon film element,
It has a width of about 15V, and this is intended to simplify the drive circuit. FIG. 5 shows a graph of the optimal bias characteristics.

また、環境温度か変化した場合にも、図6に示すように
、一定のバイアスで動作することか確認され、作業者に
煩わしいコントラスト調整をさせずにすむことが確認出
来た。
Furthermore, even when the environmental temperature changed, it was confirmed that the system operated with a constant bias as shown in FIG. 6, and it was confirmed that there was no need for the operator to make troublesome contrast adjustments.

これらの結果から、液晶と炭素被膜素子のインピーダン
ス比により、加わった電界か前記のどちらに多くかかる
かを、加えた電界の大きさによって決定する事ができた
。これは紛れもなく、求められていたEcにほかならな
い。
From these results, depending on the impedance ratio between the liquid crystal and the carbon-coated element, it was possible to determine which of the applied electric fields or the above-mentioned one would receive more of the applied electric field, depending on the magnitude of the applied electric field. This is definitely the Ec that was needed.

また、基板の一方にポリエチレンテレフタレート(PE
T)をもちいたため、強誘電性液晶特有の音なりを低減
できた。
In addition, one side of the board is made of polyethylene terephthalate (PE).
T), it was possible to reduce the sound peculiar to ferroelectric liquid crystals.

【図面の簡単な説明】[Brief explanation of drawings]

液晶装置の断面図 強誘電性液晶組成物 第一の基板 電極 炭素被膜 画素電極 配向膜 第二の基板 電極 図2 炭素被膜素子の電気特性 図3 印加電界 (a)  印加電界 (b)  液晶にかがる電界 図4 炭素被膜素子の有無にょるコン[・ラス)〜特性 図 炭素被膜素子の有無によるコントラス トの電圧依存特性 図 炭素被膜素子の有無によるコントラス トの温度特性 Cross-sectional view of liquid crystal device Ferroelectric liquid crystal composition first board electrode carbon coating pixel electrode alignment film second board electrode Figure 2 Electrical characteristics of carbon film element Figure 3 Applied electric field (a) Applied electric field (b) Electric field applied to liquid crystal Figure 4 Characteristics of carbon film elements with and without carbon film elements figure Contrast with and without carbon film elements Voltage dependent characteristics of figure Contrast with and without carbon film elements temperature characteristics

Claims (1)

【特許請求の範囲】 1、一対の基板の内側に液晶が充填された液晶装置にお
いて前記一対の少なくとも一方の基板の内側面上に電極
を有し、前記電極上に炭素原子および水素原子、窒素原
子を主な組織形成元素とする非単結晶材料よりなる炭素
被膜が設けられ、かつ前記炭素被膜上に酸化インジニウ
ム、酸化亜鉛、酸化錫の内、少なくとも1つを含む材料
よりなる透明性導電膜によって表示単位画素電極を構成
していることを特徴とする液晶装置。 2、特許請求の範囲第一項に於いて、基板の少なくとも
一方はポリエチレンテレフタレート(PET)であるこ
とを特徴とする液晶装置 3、特許請求の範囲第一項に於いて、液晶材料は強誘電
性を示すことを特徴とする液晶装置の駆動方法。
[Claims] 1. In a liquid crystal device in which liquid crystal is filled inside a pair of substrates, an electrode is provided on the inner surface of at least one of the substrates, and carbon atoms, hydrogen atoms, and nitrogen atoms are arranged on the electrode. A transparent conductive film comprising a carbon film made of a non-single-crystal material whose main structure-forming elements are atoms, and which is made of a material containing at least one of indium oxide, zinc oxide, and tin oxide on the carbon film. A liquid crystal device characterized in that a display unit pixel electrode is configured by: 2. In claim 1, at least one of the substrates is polyethylene terephthalate (PET). 3. In claim 1, the liquid crystal material is ferroelectric. 1. A method for driving a liquid crystal device, characterized in that it exhibits
JP25657190A 1990-09-25 1990-09-25 Liquid crystal device Pending JPH04133027A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25657190A JPH04133027A (en) 1990-09-25 1990-09-25 Liquid crystal device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25657190A JPH04133027A (en) 1990-09-25 1990-09-25 Liquid crystal device

Publications (1)

Publication Number Publication Date
JPH04133027A true JPH04133027A (en) 1992-05-07

Family

ID=17294491

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25657190A Pending JPH04133027A (en) 1990-09-25 1990-09-25 Liquid crystal device

Country Status (1)

Country Link
JP (1) JPH04133027A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100494684B1 (en) * 2000-12-01 2005-06-13 비오이 하이디스 테크놀로지 주식회사 Fringe filed switching mode lcd with vertically aligned ferro electric liquid crystal
US7411211B1 (en) * 1999-07-22 2008-08-12 Semiconductor Energy Laboratory Co., Ltd. Contact structure and semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7411211B1 (en) * 1999-07-22 2008-08-12 Semiconductor Energy Laboratory Co., Ltd. Contact structure and semiconductor device
US7626202B2 (en) 1999-07-22 2009-12-01 Semiconductor Energy Laboratory Co., Ltd. Contact structure and semiconductor device
US7956359B2 (en) 1999-07-22 2011-06-07 Semiconductor Energy Laboratory Co., Ltd. Contact structure and semiconductor device
US8258515B2 (en) 1999-07-22 2012-09-04 Semiconductor Energy Laboratory Co., Ltd. Contact structure and semiconductor device
US8368076B2 (en) 1999-07-22 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Contact structure and semiconductor device
US8624253B2 (en) 1999-07-22 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Contact structure and semiconductor device
KR100494684B1 (en) * 2000-12-01 2005-06-13 비오이 하이디스 테크놀로지 주식회사 Fringe filed switching mode lcd with vertically aligned ferro electric liquid crystal

Similar Documents

Publication Publication Date Title
US4978203A (en) Liquid crystal device with an apparent hysteresis
US5323172A (en) Ferroelectric liquid crystal display device
KR950000405B1 (en) Liquid crystal display device
US5559619A (en) Liquid crystal electro-optical device and manufacturing method for the same
US4995706A (en) Liquid crystal device with a ferroelectric thin film
JPH04133027A (en) Liquid crystal device
JP3281763B2 (en) Driving method of liquid crystal display device
JPS6014219A (en) display panel
JPH11305234A (en) Liquid crystal display device and method of manufacturing the same
JP2791345B2 (en) Ferroelectric liquid crystal panel
JP3123250B2 (en) LCD panel
JP2761581B2 (en) Liquid crystal device
JP2620066B2 (en) Liquid crystal device
JPS62121424A (en) lcd cell
US5258865A (en) Ferroelectric liquid crystal device
JP2761583B2 (en) Driving method of liquid crystal device
JPS62100739A (en) Liquid crystal display device
JP3097498B2 (en) Liquid crystal display device using liquid crystal having ferroelectric phase
JP3005936B2 (en) Liquid crystal display device
JPH06281953A (en) Liquid crystal display device
JP2776364B2 (en) Liquid crystal display device and driving method thereof
JPH0348819A (en) Ferroelectric liquid crystal display
JP2739147B2 (en) Liquid crystal electro-optical device
JPS632024A (en) optical modulation element
JPS62229230A (en) Liquid crystal display device