JPH04157918A - Switching device - Google Patents
Switching deviceInfo
- Publication number
- JPH04157918A JPH04157918A JP2283835A JP28383590A JPH04157918A JP H04157918 A JPH04157918 A JP H04157918A JP 2283835 A JP2283835 A JP 2283835A JP 28383590 A JP28383590 A JP 28383590A JP H04157918 A JPH04157918 A JP H04157918A
- Authority
- JP
- Japan
- Prior art keywords
- turn
- voltage
- btr
- switching
- turned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 claims description 18
- 230000000694 effects Effects 0.000 abstract description 7
- 239000003990 capacitor Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
Landscapes
- Electronic Switches (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は大出力の直流安定化電源等に使用されるスイッ
チング装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a switching device used in a high-output DC stabilized power supply or the like.
従来の大出力用のスイッチング装置は同種のスイッチン
グ素子を並列に接続するタイプのものである。Conventional switching devices for large outputs are of a type in which switching elements of the same type are connected in parallel.
同一素子を並列接続する従来のものでは素子性能上の制
約が顕著となる。たとえば、素子がバイポーラトランジ
スタである場合は素子相互の電流がアンバランスとなり
、その一方に電流が集中する。また、素子がＭＯＳ形電
界効果トランジスタである場合にはそのＯＮ抵抗が大き
いので、導通期間の損失を低下させることが容易ではな
い。Conventional devices in which the same elements are connected in parallel have significant restrictions on element performance. For example, when the elements are bipolar transistors, the currents between the elements become unbalanced, and the current concentrates on one side. Further, when the element is a MOS type field effect transistor, its ON resistance is large, so it is not easy to reduce the loss during the conduction period.
本発明の目的は以上の各難点を緩和することである。It is an object of the present invention to alleviate each of the above-mentioned disadvantages.
本発明においてはバイポーラトランジスタとＭＯ８形電
界効果トランジスタを併用し、ターンオンあるいはオフ
のスイッチング時にはＭＯＳ形電界効果トランジスタの
高速性を活用し、オン期間には、バイポーラトランジス
タの低飽和特性を活用したものである。In the present invention, a bipolar transistor and an MO8 type field effect transistor are used together, and the high speed of the MOS type field effect transistor is utilized during turn-on or off switching, and the low saturation characteristic of the bipolar transistor is utilized during the on period. be.
ＭＯＳ形電界効果トランジスタはキャリアの蓄積効果が
なく、スイッチング特性が優れているので、ターンオン
あるいはオフ時にはＭＯＳＯ３形効果トランジスタの特
性を利用する。一方、バイポーラトランジスタは低飽和
特性をもつので、オン時にはこの特性を利用する。かく
して、各モードでの損失を低減させる。Since the MOS type field effect transistor has no carrier accumulation effect and has excellent switching characteristics, the characteristics of the MOSO3 type effect transistor are used when turning on or turning off. On the other hand, since a bipolar transistor has a low saturation characteristic, this characteristic is utilized when it is turned on. Thus, losses in each mode are reduced.
以下、本発明を直流安定化電源に適用した図示の実施例
について説明する。全体の回路構成は一種のフォワード
方式のスイッチング回路であり、交流電源１、フィルタ
２、全波整流器３、コンデンサ４、抵抗５、Ｍ、Ｏ３形
電界効果トランジスタ６、バイポーラトランジスタ７、
トランス８、ダイオード９、チョークコイル１０、コン
デンサ１１．１１１力電圧検出回路１３、ドライブ回路
１２、コンデンサ１４、ダイオード１５にて構成される
。EMBODIMENT OF THE INVENTION Hereinafter, the illustrated embodiment in which the present invention is applied to a DC stabilized power source will be described. The overall circuit configuration is a type of forward switching circuit, including an AC power supply 1, a filter 2, a full-wave rectifier 3, a capacitor 4, a resistor 5, an M, O3 type field effect transistor 6, a bipolar transistor 7,
It is composed of a transformer 8, a diode 9, a choke coil 10, a capacitor 11, a power voltage detection circuit 13, a drive circuit 12, a capacitor 14, and a diode 15.
この中のＭＯＳ形電界効果トランジスタ６とバイポーラ
トランジスタ７を主体とするものが本発明に係るスイッ
チング装置であり、それにはドライブ回路１２も含まれ
る。以下、もう少し詳しく説明する。ＭＯＳ形電界効果
トランジスタ６のドレーン−ソース間とバイポーラトラ
ンジスタ７のコレクターエミッタ間は並列に接続される
。それらをドライブ回路１２は次のようなタイミング特
性をもつ。The switching device according to the present invention is mainly composed of a MOS field effect transistor 6 and a bipolar transistor 7, and also includes a drive circuit 12. This will be explained in more detail below. The drain-source of the MOS field effect transistor 6 and the collector-emitter of the bipolar transistor 7 are connected in parallel. The circuit 12 that drives them has the following timing characteristics.
すなわち、第２図のターンオン時ｔ。にはＭＯ８形電界
効果トランジスタ６のゲートに、ゲート電圧Ａを印加し
、ＭＯＳ形電界効果トランジスタ６をターンオンさせ、
その直後の時刻ｔ□にバイポーラトランジスタ７のベー
スにベース電圧Ｂを印加し、バイポーラトランジスタ７
をターンオンさせる。時刻ｔ。−時刻ｔ□間においては
、ＭＯ８形電界効果トランジスタ６のみがＯＮするため
、そのＯＮ抵抗による電圧降下Ｖ。が大きな値となるが
、時刻ｔ１に至るとバイポーラトランジスタ７の低飽和
電圧■Ｅが作用し、小さくなる。以上のように、バイポ
ーラトランジスタ７はＭＯ５形電界効果トランジスタ６
がＯＮした後にターンオンするのでオン時に見られるコ
レクタ電流の集中にともなうストレスの影響をうけにく
い。That is, at turn-on time t in FIG. Apply a gate voltage A to the gate of the MO8 type field effect transistor 6 to turn on the MOS type field effect transistor 6,
Immediately after that, at time t□, base voltage B is applied to the base of bipolar transistor 7, and bipolar transistor 7
turn on. Time t. - During time t□, only the MO8 type field effect transistor 6 is turned on, so the voltage drop V due to its ON resistance. becomes a large value, but at time t1, the low saturation voltage (E) of the bipolar transistor 7 comes into play and becomes small. As described above, the bipolar transistor 7 is the MO5 field effect transistor 6.
Since it is turned on after turning on, it is less susceptible to the stress caused by the concentration of collector current that occurs when it is on.
一方、ターンオフ時には前記とは逆に、ドライブ回路１
２は、バイポーラトランジスタ７のベース電圧Ｂを時刻
ｔ２でオフし、これがターンオフした後の時刻ｔ、でＭ
ＯＳ形電界効果トランジスタ６のゲート電圧Ａをオフす
る。On the other hand, at turn-off, the drive circuit 1
2 turns off the base voltage B of the bipolar transistor 7 at time t2, and at time t after this is turned off, M
The gate voltage A of the OS type field effect transistor 6 is turned off.
したがって、ターンオンあるいはオフ時のスイッチング
損失はＭＯＳＯ３形効果トランジスタの高速性にて低減
され、オン時の損失はバイポーラトランジスタ７の低飽
和オン電圧により低減される。Therefore, the switching loss when turned on or off is reduced by the high speed of the MOSO3 effect transistor, and the loss when turned on is reduced by the low saturation on voltage of the bipolar transistor 7.
ターンオン時のドライブ信号Ａ、Ｂのタイミングは図示
のように前後するが、これを同時に印加してもＭＯＳ形
電界効果トランジスタ６のスイッチングスピードがバイ
ポーラトランジスタ７のそれより速いので、はぼ同様の
効果となる。したがってドライブ信号Ａの方の立上りが
ドライブ信号Ｂのそれより遅れなければよい。The timings of the drive signals A and B at turn-on are different as shown in the figure, but even if they are applied simultaneously, the switching speed of the MOS field effect transistor 6 is faster than that of the bipolar transistor 7, so the effect is almost the same. becomes. Therefore, it is sufficient that the rise of drive signal A does not lag behind that of drive signal B.
なお、第１図および第２図の１゜、ｖｃはバイポーラト
ランジスタ７とＭＯＳ形電界効果トランジスタ６との全
体の電流、電圧であり、前記電圧ｖｒおよびＶ。は電圧
■。の一部となる。Note that 1° and VC in FIGS. 1 and 2 are the overall current and voltage of the bipolar transistor 7 and the MOS field effect transistor 6, and the voltages vr and V are the entire current and voltage of the bipolar transistor 7 and the MOS field effect transistor 6, respectively. is the voltage ■. become part of.
以上のように、本発明によれば各スイッチングモードで
の損失を低減した大ピーク出力タイプのスイッチング装
置が得られる。As described above, according to the present invention, a large peak output type switching device with reduced loss in each switching mode can be obtained.
第１図は本発明装置の実施例を示す回路図、第２図はそ
の動作タイミング図である。FIG. 1 is a circuit diagram showing an embodiment of the device of the present invention, and FIG. 2 is an operation timing chart thereof.
Claims (1)
ンジスタを並列接続し、以上の各素子のベースおよびゲ
ートに各ドライブ信号を供給し、同信号におけるターン
オン信号をＭＯＳ形電界効果トランジスタの方がバイポ
ーラトランジスタのそれより遅れないタイミングとし、
ターンオフ信号をバイポーラトランジスタの方がＭＯＳ
形電界効果トランジスタのそれより速いタイミングとし
たことを特徴とするスイッチング装置。1. A bipolar transistor and a MOS field effect transistor are connected in parallel, each drive signal is supplied to the base and gate of each element, and the turn-on signal of the same signal is different for the MOS field effect transistor than for the bipolar transistor. The timing should be no later than that,
Bipolar transistor is better for turn-off signal than MOS
A switching device characterized by faster timing than that of a field effect transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2283835A JPH04157918A (en) | 1990-10-22 | 1990-10-22 | Switching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2283835A JPH04157918A (en) | 1990-10-22 | 1990-10-22 | Switching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04157918A true JPH04157918A (en) | 1992-05-29 |
Family
ID=17670778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2283835A Pending JPH04157918A (en) | 1990-10-22 | 1990-10-22 | Switching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04157918A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009092435A1 (en) * | 2008-01-21 | 2009-07-30 | Abb Technology Ag | A voltage source converter and a method for control thereof |
| US8351231B2 (en) | 2010-02-05 | 2013-01-08 | Panasonic Corporation | Power conversion device |
| KR101356927B1 (en) * | 2010-03-17 | 2014-01-28 | 엘에스산전 주식회사 | Switching Power Supply |
-
1990
- 1990-10-22 JP JP2283835A patent/JPH04157918A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009092435A1 (en) * | 2008-01-21 | 2009-07-30 | Abb Technology Ag | A voltage source converter and a method for control thereof |
| US8716893B2 (en) | 2008-01-21 | 2014-05-06 | Abb Technology Ag | Voltage in a voltage source converter, a voltage source converter and a method for control thereof |
| US8351231B2 (en) | 2010-02-05 | 2013-01-08 | Panasonic Corporation | Power conversion device |
| KR101356927B1 (en) * | 2010-03-17 | 2014-01-28 | 엘에스산전 주식회사 | Switching Power Supply |
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