JPH0472552A - Thin film transistor base and method and device for inspecting it - Google Patents

Abstract

PURPOSE:To specify an image address where a short circuit failure might occur by applying a DC voltage between a scanning line and a signal line, and using an infrared image detector to detect heat generated at wiring by a current flowing through the short circuit failure portion of the scanning line and the signal line. CONSTITUTION:The wiring patterns of a short circuit image address are sequentially positioned within a field of 6M of an infrared microscope and an infrared image is detected. When the intensity of the infrared image is more than a fixed value, a device judges that heat generated by a short circuit exists in the image address, and detects the position of the short circuit within the infrared image. The short circuit can be detected e.g. where infrared light intensity is at its maximum. In addition to the coordinate of the short circuited position thus found within the infrared image, circuit pattern design data and base positioning coordinate data are used to decide a short circuit expected area where a short circuit 3 occurs. As a result, the short circuit 3 is found to exist within the short circuit expected area 73c and it is therefore possible to decide a wiring cutting position 9c.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film transistor active matrix substrate used in a liquid crystal display device, and a method and apparatus for testing the same.

[Conventional technology]

Figure 2 shows a thin film transistor active matrix substrate (
As an example of the electrical wiring configuration of a thin film transistor substrate (hereinafter abbreviated as thin film transistor substrate), a case of a 5×5 pixel arrangement is shown. The thin film transistor substrate includes scanning lines 11 to 15, signal lines 21 to 25,
Further, at each intersection, a thin film transistor 7 and a transparent pixel electrode 8 are formed on a glass substrate. The basic structure of a liquid crystal display device is one in which the thin film transistor substrate and the common electrode substrate face each other in parallel and liquid crystal is sealed between the two substrates6.
11P to 15p and 21p to 25p are electrode terminal pads.

In manufacturing thin film transistor substrates, short-circuit defects 3 between scanning lines and signal lines are likely to occur due to dust in the manufacturing process, photoresist defects, and the like. The short circuit 3 includes a short termination 3a that occurs at the intersection of the scanning line and the signal line, as shown in FIG. 3(a).
Then, there is a short circuit 3b that occurs within the thin film transistor. These defects are caused by scan line 13 and signal! This causes a linear display defect along the line 23. As a countermeasure for this, Fig. 3 (b)
), there is a method of using multiple intersections and thin film transistors. In the case of the same figure, the short circuit can be corrected by cutting the wiring at positions 9a and 9d.

However, in order to implement this method, it is necessary to identify the location where the short circuit occurs.

FIG. 4 shows an electrical method generally used for short circuit testing. In this inspection, on the thin film transistor substrate, scanning lines 11 to 15 are connected to external wirings 11cl to 15d and connecting wirings 1 to 15d.
c, and the signal lines 21 to 25 are also connected to the external wiring 21d.
~25d and are connected by connection wiring 2C. Then, the presence or absence of a short circuit is determined by bringing a probe or the like into contact with the connecting wires 1c and 2c, applying a potential difference V between the scanning line and the signal line, and measuring the current value with an ammeter 4. However, this method has a problem in that it is not possible to identify the pixel address where the short circuit has occurred.

To solve this problem, we measured the current value with a potential difference V applied to only one scanning line and one signal line using a thin film transistor substrate with the wiring structure shown in Figure 2.
This may be performed sequentially for all scanning lines and all signal lines. However, with this method, it is necessary to measure the current value as many times as the product of the number of scanning lines and the number of signal lines, and it takes a long time to measure on thin film transistor substrates with a huge number of pixels such as LCD displays, making it unsuitable for practical use. . Furthermore, damage to the electrode terminal portions lip~15p and 21p~25p due to contact with the probe for voltage application also poses a problem. Furthermore, even if a structure is adopted in which a large number of probes are brought into contact at the same time in order to shorten the inspection time, it takes a long time to electrically switch the scanning lines or signal lines for inspection. Furthermore, in the electrical inspection method described above, as shown in FIG. It is not possible to determine whether a defect exists.

As a method for shortening inspection time, JP-A-1-154092 describes a method in which a thin film transistor substrate and an electrochromic display panel are combined and defects are detected from the coloring state of a coloring film of the electrochromic substrate. According to this method, the coloring film of the electrochromic display substrate becomes non-colored or colored depending on the conduction state of each pixel electrode, making it possible to identify defective pixels. However, this method requires conductive connection between the pixel electrode of the thin film transistor substrate and the coloring film of the electrochromic display substrate via an electrolyte, so if a liquid electrolyte is used, there is a problem that the thin film transistor substrate will be contaminated. Furthermore, even when a solid electrolyte is used, there are problems in that the thin film transistor substrate is likely to be damaged due to physical contact with metal wires, and errors in defect inspection are likely to occur due to poor conduction connection.

[Problem to be solved by the invention]

As described above, with the prior art, it has been impossible to detect short-circuit defects in thin film transistor substrates in a short time and without damaging the substrate. Even if it is possible to identify the pixel address where the short circuit defect exists, if each pixel has an intersection of a scanning line and a signal line or multiple thin film transistors, it is difficult to determine which intersection or thin film transistor the short circuit exists in. It was impossible to identify.

SUMMARY OF THE INVENTION An object of the present invention is to provide a method and apparatus for inspecting a thin film transistor substrate for short-circuit defects in a thin film transistor substrate in a short time and with minimal contact with the substrate.

Another object of the present invention is a method and apparatus for inspecting a thin film transistor substrate, which can identify which intersection of a scanning line and a signal line or a thin film transistor has a short circuit, even in a thin film transistor substrate having a plurality of thin film transistors. Our goal is to provide the following.

Another object of the present invention is to provide a method and apparatus for repairing a thin film transistor substrate that can automatically repair wiring on a thin film transistor substrate having a short circuit defect.

Another object of the present invention is to provide a thin film transistor substrate having a wiring pattern suitable for inspecting short circuit defects.

[Means to solve the problem]

In order to achieve the above objective, one terminal of both the scanning line and the signal line of the thin film transistor substrate is electrically connected, a DC voltage is applied between the scanning line and the signal line, and the scanning line and the signal line are connected electrically. An infrared image detector detects the heat generated by the wiring due to the current flowing through the short-circuit defect, thereby identifying the pixel address where the short-circuit defect may occur.

Furthermore, an infrared image detector detects the heating state of the wiring pattern at a pixel address where a short-circuit defect may occur, and the position of the short-circuit defect is specified.

Furthermore, in addition to the heating state of the wiring pattern at the pixel address where the short-circuit defect may have occurred, the position of the short-circuit defect is specified by referring to a visible image detected at the same position.

Furthermore, the position data of short-circuit defects detected by the above method is used to control the position of wiring correction using a laser or the like.

Furthermore, on the outside of the electrode terminal parts of the scanning line and signal line.

By forming a narrow wiring pattern, it is possible to easily identify the pixel address where a short circuit has occurred.

C effect] In a normal thin film transistor substrate, the resistance value between the scanning line and the signal line is about several tens of megaohms, so even if a voltage of about several tens of volts is applied between the scanning line and the signal line, almost no current flows. do not have. On the other hand, if a short-circuit defect between a scanning line and a signal line exists in the thin film transistor substrate, current flows through the short-circuit defect, and the wiring generates heat. By detecting the heat generation state using an infrared image detector, it is possible to detect the scanning line and signal line where the short circuit has occurred, and from this, the pixel address where the short circuit has occurred can be specified.

In addition, because the resistance of short-circuited parts is higher than that of normal wiring, the radiation intensity of infrared light is strong. Therefore, by detecting an infrared image of the wiring pattern at the shorted pixel address, the shorted position can be identified from the infrared light intensity distribution.

Furthermore, if a visible image is used, the wiring pattern can be clearly detected. Therefore, by detecting a visible image at the same position as the infrared image and referring to the position of the wiring pattern in the visible image, it is possible to more easily identify the short circuit position.

Furthermore, when the short circuit position is identified by the above method, the position where the wiring should be cut can be determined. Based on this, the wiring correction irradiation position can be controlled using a laser or the like, and the wiring can be automatically corrected.

Further, by narrowing the width of the wiring outside the electrode terminal portions of the scanning line and the signal line, the wiring resistance increases and the amount of heat generated from the wiring increases. This makes it easy to detect the wiring.

〔Example〕

Hereinafter, nine aspects of the present invention will be described in detail. FIG. 1 shows the procedure of a method for testing a thin film transistor substrate according to the present invention. In the present invention, inspection is performed with one terminal of each of the scanning line 1 and the signal line 2 of the thin film transistor substrate electrically connected. First, a continuity test is performed in the same manner as the conventional electrical test method. Next, for the board determined to be defective in the continuity test, the address of a pixel where a short circuit may have occurred (shorted pixel address) is identified. Then, after sequentially inspecting the wiring pattern of the shorted pixel address and specifying the shorted position, the wiring is corrected.

In the continuity test, a potential difference ■ is applied between the scanning line 1 and the signal line 2, and the current value is measured with an ammeter 4. In a normal thin film transistor substrate, the resistance value between the scanning line 1 and the signal line 2 is about several tens of megaohms, so almost no current flows even if a voltage of about several tens of volts is applied. On the other hand, scan line 1
When a short-circuit defect 3 exists between the signal line 2 and the signal line 2, a current flows through this short-circuit portion 3. Therefore, a board whose voltage f7 is equal to or higher than a specified value is determined to be a defective board in which a short circuit has occurred.

To identify the shorted pixel address, similarly to the continuity test, a potential difference ■ is applied between the scanning line 1 and the signal line 2, heat generation in the wiring due to the current flowing through the shorted scanning line and signal line is detected, and the shorted pixel address is detected. Identify. For this, we used an infrared microscope @ 5 m that can obtain an output corresponding to the intensity of infrared light emitted from a heat generating part in a micro area of about 10 to 301 Lm. 6 and detect the wiring that is generating heat.

FIG. 5 shows a detailed embodiment of the shorted pixel address identification method. In the same figure, in the thin film transistor substrate, scanning lines 11 to 15 are electrode terminal pads], IP to 15P
The signal lines 21 to 25 are electrically connected to the external wirings 11d to 15d formed on the outside of the electrode terminal pads 21p to 25p by the connection wiring 1c, and the signal lines 21 to 25 are electrically connected to the external wirings 11d to 15d formed on the outside of the electrode terminal pads 21p to 25p. 21d to 25cl and are electrically connected by the connection arrangement 2c. Scan 1iA11-15 and signal lines 21-2
In order to apply a potential difference V between the lines 1c and 2c, a probe for voltage application may be brought into contact with the connection wirings 1c and 2c. As shown in the figure, 5 short ends 3 scan! 13 and the signal line 23, the current flows from the external wiring 13d-+electrode terminal pad 13p→short end 3→electrode terminal pad 23p→external arrangement 123d, and the wiring between them generates heat. Therefore, for example, external wiring lid~15d and external wiring 21d~25d
If the infrared rays emitted from the is detected by an infrared microscope along the broken line 6, the infrared light intensity distribution waveform It, 2t of the broken line 6 is detected.
is obtained. By detecting the positions where the infrared light intensity is strong from these waveforms, the wiring positions where heat is generated, that is, the scanning line 13 and the signal line 23 can be detected.

As a result, the shorted pixel address can be identified. In this embodiment, if there are N short circuits in the board, the maximum number of scanning lines and signal lines to be detected will be N each, and the maximum of NXN intersections will be assigned to pixel addresses where short circuits may occur. It can be identified as

Next, a first embodiment of the short circuit position specifying method will be described. 6th
As shown in the figure, in a substrate having a plurality of intersections between scanning lines and signal lines and a plurality of thin film transistors 7, short circuit defects may occur in short circuit candidate regions 73a to 73d. To fix the wiring for this.

It is necessary to specify in which short circuit candidate region a short circuit has occurred (short circuit position specification). In general, short-circuited parts have a higher resistance than normal wiring, and therefore emit infrared light at a higher intensity. Therefore, in this embodiment, as shown in FIG. 1, the wiring patterns of the shorted pixel addresses are sequentially positioned within the field of view of the infrared microscope 5m, and an infrared image is detected. If the intensity of the infrared image is above a certain value, it is determined that heat due to a short circuit exists at that pixel address, and the position of the short circuit in the infrared image is detected. The short circuit position may be detected, for example, as the position where the infrared light intensity is maximum. In addition to the short circuit position coordinates in the infrared image obtained in this manner, circuit pattern design data and board positioning coordinate data may be used to determine the short circuit candidate region where the short termination 3 has occurred. As a result, the 6th
It is found that the short end 3 shown in the figure exists in the short circuit candidate region 73c, and the wiring cutting position can be determined as 90. Note that if the intensity of the infrared image is less than a certain value, it is determined that there is no short circuit at that short pixel address, and the short circuit position is not specified.

Next, a second embodiment of the short circuit position specifying method will be described with reference to FIG. In the first embodiment, only the infrared image was used to identify the short circuit position, but in this embodiment, the short circuit position is identified by referring to a visible image that detects the same position as the infrared image. FIG. 7(b) is a visible image obtained by performing transillumination and detecting the wiring pattern shown in FIG. 6. Since transmitted illumination illuminates from the back of the board, the metal wiring pattern can be detected as a silhouette image, as shown in the figure. First, a characteristic pattern as shown in FIG. 6(a) is registered as a dictionary pattern 63.

At this time, the position 77 of the dictionary pattern 63 is set as the origin, and the short circuit candidate positions (representative positions of the short circuit candidate area [) 74a to 74c
1 and the coordinates of the cutting positions 98 to 9d. If the dictionary pattern position 77 is determined by this, the short circuit candidate position 74
a to 74d and cutting positions 1i9a to 9d can be determined. In short-circuit position identification, the wiring patterns at short-circuit defective pixel addresses are sequentially inspected, but the dictionary pattern position 77 in the visible image changes depending on the positioning state of the board. Therefore, for each inspection, visible images are detected using transmitted illumination, and through pattern matching,
The coordinates 77 of the position where the dictionary pattern 63 most closely matches in the image are determined. Thereby, the coordinates of the short circuit candidate positions 74a to 74d and the cutting positions 9a to 9d in the visible image can be calculated. On the other hand, the position of the short circuit 3 is determined from the infrared image. In this embodiment, the visible image and the infrared image detect the same position, so the coordinates of the visible image and the infrared image are the same. Therefore, among the short circuit candidate positions 74a to 74d determined from the visible image, the short circuit candidate position where the distance to the position of the short circuit 3 in the infrared image is the minimum can be determined as the position where the short circuit has occurred.

As a result, similar to the first embodiment, the short circuit 3 shown in FIG.
is found to exist in the short circuit candidate region 73c, and the wiring cutting position can be determined to be 9c. In this embodiment, the coordinate data to be stored in advance is only the short circuit candidate positions 74a to 7.4 d and the cutting positions 9a to 9d when the origin is the digit 1177 of the dictionary pattern 63. It can be easily achieved.

The wiring cutting position is determined by the short circuit position specifying method described above. Therefore, in the wiring correction, the board where the short circuit has occurred is corrected by cutting the wiring at the wiring cutting position using a wiring correction method using a laser 43 or the like.

Next, a first embodiment of the thin film transistor substrate inspection apparatus will be described with reference to FIGS. 8 to 10. This device consists of a mechanical system, a continuity test system, and an optical system. The mechanical system consists of a θ stage 31.2 stage 32, Y stage 33, and X stage 34.
A thin film transistor substrate 30 is placed, and an arbitrary position of the substrate 30 is positioned within the field of view of the optical system. The continuity test system consists of a 35° DC power supply, an ammeter 4, and probes 36a and 36b.The probes 36a and 36b are brought into contact with the wiring pattern to apply a potential difference between the scanning line and the signal line, and the current value is used to detect short-circuit defects. Determine presence/absence. The optical system consists of an infrared image detection system, a laser beam irradiation system for wiring cutting, a bright field illumination system, a transmitted illumination system, and a visible image detection system. The infrared image detection system includes an objective lens 37,
A zero-line infrared image detection system consisting of a dichroic mirror 38, a lens 39, and an infrared image detector 5, which detects infrared light (wavelength range λ, approximately 5 to 13 μm) emitted from the heat generating part on the thin film transistor substrate 3o. Since the system magnifies the infrared image with the objective lens 37, it is possible to detect the intensity of the infrared light emitted from a micro region of about 10 to 30 μm [phase]. The laser beam irradiation system includes a laser 43, a beam expander 42, an aperture 41 with a moving mechanism (not shown), and a dichroic mirror 40. Cut the wiring by projecting it onto the screen. The bright field illumination system consists of a lamp 46, a lens 45, and a half mirror 44.
The thin film transistor substrate 30 is illuminated from above through the objective lens 37. The transmitted illumination system includes a lamp 50 and a lens 49.
The light is illuminated from the back side of the thin film transistor substrate 30. The visible image detection system includes a visible image detector 48 and a lens 47. Note that the visible image detector 48 is adjusted to detect a visible image at the same position as the infrared image detector 5. In this embodiment, the objective lens 37 needs to transmit light from the visible range to the infrared range, and the glass material is Zn.
S etc. may be used. The dichroic ink mirror 38 is an optical element that reflects light in the detection wavelength range λ of the infrared image detector 5 and transmits light in the detection wavelength range λ and shorter wavelengths. Furthermore, the dichroic mirror 40 reflects the wavelength λ2 (λ2<λ□) of the laser 43, and reflects the visible light (wavelength range λ3).
:λ3×λ2) has the characteristic of being transparent. In this embodiment, the above-described continuity test, shorted pixel address identification, shorted position identification, and wiring correction are realized by one testing device.

Next, an embodiment of a method for detecting an infrared light intensity distribution waveform in identifying a shorted pixel address will be described with reference to FIG. The thin film transistor substrate 3o is rotated by a motor 51 and a feed screw 52.
It is placed on the stage 34. Note that the position of the X stage 34 is detected by the position detector 53, and the infrared light emitted from the substrate 3o is detected by the infrared image detector 5 via the objective lens 37. In the above configuration, when detecting an image, the output signal of the infrared image detector 5 is sampled and held in the sample and hold circuit 55 based on the signal of the position detector 53,
The A/D converter 56 performs A/D conversion and stores it in the memory 57. By similarly detecting the Y direction, the infrared light intensity distribution waveform It shown in FIG. 5 is obtained.

2t is obtained.

Next, FIG. 10 shows an embodiment of a circuit configuration for automatically identifying short-circuited pixels and correcting wiring. The image detected by the visible image detector 48 is stored in an image memory 60. And 2
After binarization in the digitization circuit 61, the pattern matching circuit 62
Perform pattern matching with the dictionary pattern 63 in
The dictionary pattern position 77 in the detected image shown in the figure is determined. This position data and the seat collar data 65 of the short-circuit candidate position and the wire cutting position set in advance are input to the short-circuit candidate position calculation circuit 64, and the short-circuit candidate position and the wire cutting position are calculated. On the other hand, the image detected by the infrared image detector 5 is stored in the memory 66.
After storing the information, first, the presence or absence of heat generation is determined by the heat generation presence/absence determination circuit 67. In other words, if the intensity of the infrared image is less than a certain value, it is determined that the pixel address has no short circuit, and the short circuit position is not specified. If the intensity of the infrared image is above a certain value,
It is determined that there is a short circuit, and the heat generating position detection circuit 68 detects the position where the infrared light intensity is maximum in the image as the heat generating position. The short circuit position determination circuit 69 determines the short circuit candidate position closest to the heat generation position determined by the one heat generation position detection circuit 68 as the true short circuit position. This also determines the wiring cutting position. Based on this, the aperture position calculation circuit 70 determines the aperture 4 of the laser irradiation system.
Calculate the position of 1. Further, the opening controller 71 drives the opening moving mechanism 72 to position the opening 41. Thereafter, by irradiating a laser through the beam expander 42, the wiring can be automatically cut and the short circuit can be corrected. In the above embodiments, a case has been described in which a visible image is referred to for identifying a short circuit position. However, when only an infrared image is used, circuit pattern design data and The short circuit candidate position determined from the board positioning coordinate data may be input to the short circuit position determining circuit 69.

Note that in the above description, a visible image under transmitted illumination is used to detect the position of the wiring pattern, but a visible image under bright field illumination may also be used. However, if a binary image of the wiring pattern cannot be stably obtained, it may be necessary to perform pattern matching using a grayscale image. Further, a method other than pattern matching, such as projection, may be used to determine the specific wiring position. FIG. 11 shows a second embodiment of the thin film transistor substrate inspection apparatus. In this embodiment, an objective lens 83 for visible light and laser light and an objective lens 82 for infrared light are provided independently. For example, an objective lens 83 for visible light and laser light is placed in the center, and a donut-shaped objective lens 82 for infrared light is placed coaxially with the objective lens 83, similar to the first embodiment. Functionality is obtained. In addition, 84
is a mirror with a hole in the center, and is an optical element that allows visible light and laser light to pass through the center and reflects only infrared light.

In the embodiments of the thin film transistor substrate inspection apparatus described above, a case has been described in which short circuit defect inspection and wiring correction are performed using one apparatus. However, it goes without saying that the short circuit defect inspection and wiring correction according to the present invention may be performed individually using separate devices.

Next, the first external wiring pattern suitable for identifying the shorted pixel address.
An example of this is shown in FIG. The amount of heat generated by the wiring is W, the wiring resistance is R1, the current value flowing through the wiring is ■, the volume resistivity of the wiring material is ρ [Ω・m], the wiring IIA length is g, the wiring width is X, and the wiring thickness is t. Then W=I”R・・・・・・・・・・・・
・・・・・・・・・・・・・・・・・・・・・■R=ρ
・Q/(x-t) ・・・・・・・・・・・・■ In other words, by reducing the wiring width or wiring thickness, the amount of heat generated from the wiring per unit length increases, that is, the intensity of infrared light emitted from the wiring increases, making it easier to detect the heating wiring.

In the embodiment shown in FIG. 12, the wiring widths of the external wirings 23cl and 24d are set to the minimum exposure of the wiring pattern of the thin film transistor substrate. Ill! It is quite thin. Note that the external wiring does not affect the operating characteristics of the five pixels because it is located outside the electrode terminal pads 23p and 24p to which ICs for driving the pixels are connected. Also, like the electrode terminal pad, the drive IC
There is no need to secure a certain width in order to reduce the contact resistance with the

Therefore, it is possible to form an external wiring pattern having the above-described shape into a thin film transistor substrate.

FIG. 13 shows a second embodiment of the external wiring pattern.6 The differences from the embodiment shown in FIG. 7 are the external wiring pattern 23cl,
24d and the glass substrate 81 are coated with an insulating film 80 such as SiN used in the thin film transistor substrate manufacturing process. The intensity of infrared light emitted from an object varies depending on the material and surface condition even if the object has the same temperature, but according to this embodiment, the intensity of infrared light emitted from the surface of the insulating film 80 can be detected. Therefore, the infrared light intensity distribution almost corresponds to the temperature distribution, and the process for detecting the position of the wiring that generates heat can be simplified.

〔Effect of the invention〕

As described above, according to the present invention, short-circuit defects in the wiring of a thin film transistor substrate can be quickly detected, so that defects in the thin film transistor substrate can be inspected in an extremely short period of time.6. The number of contacts made by the probe for defect inspection is extremely small, reducing accidents that damage the board during the inspection process6.
Furthermore, according to the present invention, it is possible to identify the short circuit position, which was previously impossible, even for a substrate in which a plurality of thin film transistors or a plurality of intersections of scanning lines and signal lines are formed for each pixel of a liquid crystal display. This makes it possible to repair a board with short-circuit defects. As described above, according to the present invention, thin film transistor substrates can be inspected in an extremely short period of time, which is effective in improving the yield of thin film transistor substrates, and has a significant effect in reducing product costs.

[Brief explanation of drawings]

FIG. 1 is an explanatory diagram of an embodiment of the thin film transistor substrate inspection method according to the present invention, FIG. 2 is a diagram showing an example of the electrical wiring configuration of a thin film transistor substrate, and FIG. 3 is a diagram showing the types of short circuit defects and measures for short circuit defects. Diagram 4 showing an example of wiring structure
The figure is an explanatory diagram of the conventional electrical short circuit defect inspection method, Figure 5 is an explanatory diagram of the short circuit pixel address identification method, Figure 6 is an explanatory diagram of the short circuit position identification method, and Figure 7 is an illustration of the method using transmitted illumination images. An explanatory diagram of the short circuit position identification method, Fig. 8 is a diagram showing the first embodiment of the thin film transistor substrate inspection apparatus, Fig. 9 is an explanatory diagram of the image detection method for identifying the short circuit pixel address, and Fig. 10 is the circuit configuration. 11 is a diagram showing a second embodiment of the thin film transistor substrate inspection apparatus, and FIGS. 12 and 13 are diagrams each showing an embodiment of an external wiring pattern suitable for identifying shorted pixel addresses. be. 1.11~15...Scanning line 2.21~25/Signal line 3.3a~3d...Short circuit defect 4...Ammeter 5...
Infrared image detector, 5m...Infrared microscope 6...Infrared light intensity detection position, 7.70~7d...Thin film transistor 8...Transparent pixel electrode, 98~9d...Wiring cutting position 11p~15p ...Scanning line electrode terminal pads 21p to 25
p/signal line electrode terminal pad lc, 2c...connection wiring lid~15d, 21d~25d...external wiring it,
2t...Infrared light intensity distribution waveform 30...Thin film transistor substrate, 31・θ stage 3
2...X stage, 32...Y stage 34...X stage, 35...DC power supply 36a, 36b...probe, 37...objective lens 38.40...dichroic ink mirror 39.45, 47.49...Lens, 41...Aperture 42/Beam expander, 43...Laser 4
4. Half mirror 146 and 5o... lamp 48...
・Visible image detector, 51...Motor 52...
Feed screw, 53...Position detector 55...
Sample hold circuit 56...A/D converter, 57...Memory 63
- Dictionary patterns 73a to 73d...Short circuit candidate areas 74a to 74cl...Short end candidate position 75 - Equal infrared light intensity line 76 - Infrared light intensity distribution waveform 77...Dictionary pattern position, 80 - Insulating film 81・
- Glass substrate 82 - Objective lens 83 for infrared light - Objective lens 84 for visible light and laser light - Mirror with a hole in the center

Claims (1)

[Claims] 1. A scanning line and a signal line of a thin film transistor active matrix substrate are both electrically connected by one terminal,
A potential difference is applied between the scanning line and the signal line, and an infrared image detector detects the heating state of the scanning line, the signal line, and the shorted part due to the current flowing through the shorted defective part of the scanning line and the signal line. Inspection method for thin film transistor substrates. 2. The heating state of the scanning line that exists between the terminal that electrically connects the scanning line and the pixel area and the signal line that exists between the terminal that electrically connects the signal line and the pixel area is detected using infrared light. 2. The method for inspecting a thin film transistor substrate according to claim 1, further comprising identifying a pixel address where a short circuit defect may occur by detecting it with an image detector. 3. If the intensity of the infrared image of a pixel address where a short-circuit defect may occur is greater than the reference value, it is determined that a short-circuit defect exists at that pixel address, and the short-circuit position is determined from the infrared light intensity distribution. 2. The method for inspecting a thin film transistor substrate according to claim 1, further comprising specifying a position where the occurrence of the problem occurs. 4. The method for inspecting a thin film transistor substrate according to claim 3, further comprising the step of identifying a position where a short circuit defect has occurred by referring to a visible image of a wiring pattern of the thin film transistor active matrix substrate. 5. Electrically connect the scanning line and signal line of the thin film transistor active matrix substrate with one terminal,
A potential difference is applied between the scanning line and the signal line, and an infrared image detector detects the heating state of the scanning line, signal line, and short-circuited part due to the current flowing through the short-circuited part of the scanning line and signal line, and a short-circuited defect is detected. If the intensity of the infrared image of a pixel address that may be damaged is higher than the reference value, it is determined that a short circuit defect exists at that pixel address, and the position where the short circuit occurs is determined from the infrared light intensity distribution. 1. A method for repairing a thin film transistor substrate, comprising: identifying a short-circuit defect, and controlling a wiring repair position using a laser or the like using the identified short-circuit defect position data. 6. A voltage applying means for applying a potential difference between the scanning line and the signal line of the thin film transistor active matrix substrate, a means for detecting an infrared image, and a means for detecting a heat generation position from the infrared image, and the infrared A thin film transistor substrate inspection device characterized by identifying a pixel address where a short-circuit defect may occur based on the heat generation state of a scanning line or signal line from an image. 7. A voltage applying means for applying a potential difference between a scanning line and a signal line of a thin film transistor active matrix substrate, a means for detecting an infrared image, and a means for detecting a heat generation position from the infrared image, and the infrared A thin film transistor substrate inspection device characterized by identifying short circuit positions from images. 8. Claim 8, comprising means for detecting a visible image at the same position as the infrared image, and identifying the position where the short circuit defect has occurred by referring to the position of the wiring pattern in the visible image. 7. The thin film transistor substrate inspection device according to 7. 9. Voltage applying means for applying a potential difference between the scanning line and the signal line of the thin film transistor active matrix substrate, means for detecting an infrared image, means for detecting a heat generation position from the infrared image, and a means for detecting a heat generation position from the infrared image. What is claimed is: 1. A thin film transistor substrate repair apparatus comprising: a control means for specifying a short circuit position and controlling a wiring correction position using a laser using the specified short circuit defect position data. 10. A thin film transistor active matrix substrate, in which a metal wiring pattern whose wiring width is narrowed to correspond to the minimum exposed line width of the wiring pattern of the substrate is provided on the outside of the electrode terminal pads of scanning lines and signal lines formed around the substrate. A thin film transistor substrate comprising: 11. The thin film transistor substrate according to claim 10, characterized in that an insulating film is coated on a metal wiring pattern having a narrowed wiring width.