JPH0499034A - Bump forming method and bump forming device - Google Patents
Bump forming method and bump forming deviceInfo
- Publication number
- JPH0499034A JPH0499034A JP2208585A JP20858590A JPH0499034A JP H0499034 A JPH0499034 A JP H0499034A JP 2208585 A JP2208585 A JP 2208585A JP 20858590 A JP20858590 A JP 20858590A JP H0499034 A JPH0499034 A JP H0499034A
- Authority
- JP
- Japan
- Prior art keywords
- bump
- wire
- electrode
- bump forming
- pressing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、バンプ形成方法およびバンプ形成装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a bump forming method and a bump forming apparatus.
従来の技術
以下に従来のバンプ形成方法およびバンプ形成装置につ
いて図面を参照しながら説明する。2. Description of the Related Art A conventional bump forming method and a conventional bump forming apparatus will be described below with reference to the drawings.
(1) ワイヤボンダを用いた従来のバンプ形成方法
(そのl)
第4図(a)〜(e)は従来のワイヤホンダを用いた第
1のバンプ形成方法の工程断面図である。(1) Conventional bump forming method using a wire bonder (part 1) FIGS. 4(a) to 4(e) are process cross-sectional views of a first bump forming method using a conventional wire bonder.
第4図(a)に示すようにキャピラリ21の孔に通した
金(Au)ワイヤ22の先端に電気放電などによってA
uワイヤ22の直径の2〜3倍の径のボール23を形成
する。24はLSIチップ、25はLSIチップ24の
上の電極パッドである。次に同図(b)に示すように、
Auワイヤ22の先端に形成したボール23をキャピラ
リ21によってLSIチップ24の電極パッド25に押
圧・固着し、バンプ26を形成する。次に同図(C)に
示すように、キャピラリ21をバンプ26の上方に垂直
に上昇させ一1同図(d) 、 (e)に示すように、
レーザ装置27からレーザ光28をAuワイヤ22に対
して垂直に照射し、切断する。As shown in FIG. 4(a), the tip of the gold (Au) wire 22 passed through the hole of the capillary 21 is heated by electric discharge or the like.
A ball 23 having a diameter 2 to 3 times the diameter of the u-wire 22 is formed. 24 is an LSI chip, and 25 is an electrode pad on the LSI chip 24. Next, as shown in the same figure (b),
A ball 23 formed at the tip of the Au wire 22 is pressed and fixed to the electrode pad 25 of the LSI chip 24 by the capillary 21 to form a bump 26. Next, as shown in FIG. 2C, the capillary 21 is vertically raised above the bump 26, and as shown in FIGS.
A laser beam 28 is irradiated perpendicularly to the Au wire 22 from a laser device 27 to cut it.
(2) ワイヤボンダを用いた従来のバンプ形成方法
(その2)
第5図(a)〜(e)はワイヤボンダを用いた第2のバ
ンプ形成方法の工程断面図である。(2) Conventional bump forming method using a wire bonder (Part 2) FIGS. 5(a) to 5(e) are process cross-sectional views of a second bump forming method using a wire bonder.
第5図(a)に示すように、キャピラリ21の孔に通し
たAuワイヤ22の先端に電気放電によってAuワイヤ
22の直径2〜3倍の径のボール23を形成する。次に
同図(b)に示すように、Auワイヤ22の先端に形成
したボール23をキャピラリ21によってLSIチップ
24の電極パッド25に押圧・固着し、バンプ26を形
成する。次に同図(C)〜(e)に示すようにキャピラ
リ21をバンプ26の上方でループ状軌道を描いて移動
した後、キャピラリ21を下降させてAuワイヤ22を
切断してバンプ26の上部に頂部29を形成する。なお
同図(d)はキャピラリ21の先端の軌跡を示すもので
ある。このような形成方法によって2段階突起構造のバ
ンプ26が形成される。As shown in FIG. 5(a), a ball 23 having a diameter two to three times the diameter of the Au wire 22 is formed at the tip of the Au wire 22 passed through the hole of the capillary 21 by electric discharge. Next, as shown in FIG. 2B, the ball 23 formed at the tip of the Au wire 22 is pressed and fixed to the electrode pad 25 of the LSI chip 24 by the capillary 21 to form a bump 26. Next, as shown in (C) to (e) of the figure, the capillary 21 is moved in a loop-shaped trajectory above the bump 26, and then the capillary 21 is lowered to cut the Au wire 22 and move the upper part of the bump 26. A top portion 29 is formed. Note that FIG. 2D shows the locus of the tip of the capillary 21. By such a forming method, the bump 26 having a two-step protrusion structure is formed.
(3) メツキ法による従来のバンプ形成方法第6図
にメツキ法で形成したバンプの形状を示した。多数個の
LSIが形成されたシリコンウェハ30の上には眉間絶
縁膜31が形成されている。その眉間絶縁膜31の上に
はアルミ電極32が形成され、そのアルミ電極32の一
部に開口を有する表面保護膜33が全面に形成されてい
る。通常のワイヤボンド法による結線ではこの状態のシ
リコンウェハ30を個々のLSIに分割し、組み立て工
程へ送ることになる。(3) Conventional bump formation method using plating method Figure 6 shows the shape of a bump formed by plating method. A glabellar insulating film 31 is formed on a silicon wafer 30 on which a large number of LSIs are formed. An aluminum electrode 32 is formed on the glabellar insulating film 31, and a surface protection film 33 having an opening in a part of the aluminum electrode 32 is formed over the entire surface. In connection using the normal wire bonding method, the silicon wafer 30 in this state is divided into individual LSIs and sent to an assembly process.
一方電解メツキによるバンプ形成では、まず表面保護膜
33の全面にメツキ時の電極を兼ねた拡散防止用のアン
ダーバンプメタル層34が形成される。次に金バンプ3
5を形成すべき領域に開口を有するフォトレジスト膜(
図では省略)を形成する。この状態でアンダーバンプメ
タル層34を一方の電極として電解メツキを施し、所定
の高さの金バンプ35を形成する。On the other hand, in bump formation by electrolytic plating, an under bump metal layer 34 for diffusion prevention, which also serves as an electrode during plating, is first formed on the entire surface of the surface protection film 33. Next gold bump 3
A photoresist film (
(omitted in the figure). In this state, electrolytic plating is performed using the under bump metal layer 34 as one electrode to form gold bumps 35 of a predetermined height.
フォトレジスト膜を除去した後、金バンプ35または新
たに形成したフォトレジスト膜をマスクとして金バンプ
35の下部以外の領域のアンダーバンプメタル層35を
エツチング除去する。After removing the photoresist film, using the gold bump 35 or the newly formed photoresist film as a mask, the underbump metal layer 35 in the area other than the lower part of the gold bump 35 is removed by etching.
発明が解決しようとする課題
しかしながら上記従来の構成において、ワイヤボンダを
用いたバンプ形成方法ではバンプの高さが一定せず、ま
たLSIの電極にボールが固着しない等の不良が発生す
る上、バンプの底部の直径が100μm程度になるため
狭ピッチのバンプ形成が困難であるという課題を有して
いた。また電解メツキ法によるバンプ形成方法では、L
SIが形成されたシリコンウェハの上に新たにアンダー
バンプメタル層を2〜3層形成し、電解メツキ液に浸漬
して通電しながらメツキするなど工程が複雑でコストが
高くなるという課題を有していた。Problems to be Solved by the Invention However, in the above-mentioned conventional configuration, the bump formation method using a wire bonder causes defects such as uneven height of the bump and failure of the ball to stick to the electrode of the LSI. Since the diameter of the bottom portion is approximately 100 μm, there is a problem in that it is difficult to form bumps with a narrow pitch. In addition, in the bump formation method using the electrolytic plating method, L
The problem is that the process is complicated and the cost is high, as two to three new underbump metal layers are formed on the silicon wafer on which the SI has been formed, and the process is immersed in an electrolytic plating solution and plated while applying electricity. was.
本発明は上記従来の課題を解決するもので、従来のワイ
ヤボンド法による組み立て工程に使用するシリコンウェ
ハの上に直接バンプを形成するバンプ形成方法およびバ
ンプ形成装置を提供することを目的とする。The present invention solves the above-mentioned conventional problems, and aims to provide a bump forming method and a bump forming apparatus for forming bumps directly on a silicon wafer used in an assembly process using the conventional wire bonding method.
課題を解決するための手段
この目的を達成するために本発明のバンプ形成方法は、
先端部に凹部を有する押圧部の直下に被加工材を供給す
る第1工程と、押圧部を用いて被加工材を押圧しバンプ
を形成するとともに、そのバンプの基板の所定の電極上
に接着する第2の工程とを備えた構成を有している。Means for Solving the Problems To achieve this object, the bump forming method of the present invention is as follows:
The first step is to supply the workpiece directly under the pressing part that has a concave portion at the tip, and the pressing part is used to press the workpiece to form a bump, and the bump is bonded onto a predetermined electrode of the substrate. It has a configuration including a second step of performing.
作用
この構成によって、バンプの形状は押圧部の先端部に設
けられた凹部の形状で決まるため、常に一定高さ、一定
形状のバンプが形成できる上、凹部の形状を変更するこ
とにより任意の形状のバンプを容易に形成することがで
きや。Effect: With this configuration, the shape of the bump is determined by the shape of the recess provided at the tip of the pressing part, so it is possible to always form a bump with a constant height and shape, and by changing the shape of the recess, it is possible to form any shape. bumps can be easily formed.
実施例
以下本発明の一実施例におけるバンプ形成方法について
図面を参照しながら説明する。EXAMPLE Hereinafter, a bump forming method in an example of the present invention will be described with reference to the drawings.
第1図(a)〜(e)は本発明の一実施例におけるバン
プ形成方法を示す工程断面図である。FIGS. 1(a) to 1(e) are process cross-sectional views showing a bump forming method in an embodiment of the present invention.
まず第1図(a)に示すように、電極2が形成された基
板1をバンプ形成装置の所定の位置に設置する。次にク
ランパー部3により案内ガイド4を通して線材5を設定
量だけ押圧部6の先端部7の直下に供給する。次に同図
(b)に示すように、押圧部6で線材5を基板1の上の
電極2に押し付けることにより、線材5はその一部が先
端部70凹部8に押し込まれると同時に電極2に接着さ
れる。このとき押圧部6に超音波を印加することにより
線材5と電極2の接合を一層強化することができる(な
お図面では超音波発振器は省略した)。次に同図(C)
に示すように、クランパー部3で線材5を保持しなから
押圧部6を上方へ引き上げることにより線材5はバンプ
9から引きちぎられる。なお線材5を引きちぎった後に
残った屑は高圧ガスノズル10からのガスで吹き飛ばす
。このときに形成されるバンプ9の形状は先端部70凹
部8とは逆の形状になっている。線材5をバンプ9から
引きちぎった後、クランパー部3により新たに線材5が
押圧部6の直下に設定量だけ供給される。次に同図(d
)に示すように、次の電極2にバンプ9を形成する。こ
のようにして同図(e)に示すように、順次電極2の上
にバンプ9を形成する。First, as shown in FIG. 1(a), a substrate 1 on which electrodes 2 are formed is placed at a predetermined position in a bump forming apparatus. Next, a set amount of wire 5 is supplied by the clamper section 3 through the guide 4 directly below the tip end 7 of the pressing section 6 . Next, as shown in FIG. 6B, by pressing the wire 5 against the electrode 2 on the substrate 1 with the pressing part 6, a part of the wire 5 is pushed into the tip part 70 and the recess 8, and at the same time, the wire 5 is pressed against the electrode 2 on the substrate 1. is glued to. At this time, by applying ultrasonic waves to the pressing part 6, the bond between the wire 5 and the electrode 2 can be further strengthened (the ultrasonic oscillator is omitted in the drawing). Next, the same figure (C)
As shown in FIG. 2, the wire 5 is torn off from the bump 9 by holding the wire 5 with the clamper 3 and pulling up the pressing part 6 upward. Note that the debris remaining after the wire rod 5 is torn off is blown away with gas from the high-pressure gas nozzle 10. The shape of the bump 9 formed at this time is the opposite shape to that of the tip portion 70 and the recessed portion 8. After the wire 5 is torn off from the bump 9, the clamper section 3 supplies a new set amount of the wire 5 directly below the pressing section 6. Next, the same figure (d
), bumps 9 are formed on the next electrode 2. In this way, bumps 9 are sequentially formed on the electrodes 2, as shown in FIG. 2(e).
次に本発明の一実施例におけるバンプ形成装置について
図面を参照しながら説明する。Next, a bump forming apparatus according to an embodiment of the present invention will be described with reference to the drawings.
第2図(a)は本発明の一実施例におけるバンプ形成装
置の要部斜視図、第2図■は同図(a)のA部の拡大部
分断面図である。これらの図において第1図と同一箇所
には同一符号を付し、詳細説明は省略する。なお11は
超音波発振器、12は超音波発振器11からの超音波を
押圧部6に伝達する超音波ホーンである。FIG. 2(a) is a perspective view of a main part of a bump forming apparatus according to an embodiment of the present invention, and FIG. 2(2) is an enlarged partial sectional view of section A in FIG. 2(a). In these figures, the same parts as in FIG. 1 are denoted by the same reference numerals, and detailed explanation will be omitted. Note that 11 is an ultrasonic oscillator, and 12 is an ultrasonic horn that transmits ultrasonic waves from the ultrasonic oscillator 11 to the pressing part 6.
第2図(a)に示すように、本発明の一実施例における
バンプ形成装置は、基板1を搭載する基台(図面では省
略)、線材5を押圧する押圧部6、押圧部6を支持する
とともに超音波発振器11からの超音波を押圧部6に伝
達する超音波ホーン12、基板1の電極2上にバンプ9
を形成した後、線材5の屑等を吹き飛ばす高圧ガスを供
給する高圧ガスノズル10から構成されている。As shown in FIG. 2(a), a bump forming apparatus according to an embodiment of the present invention includes a base (not shown in the drawing) on which a substrate 1 is mounted, a pressing section 6 that presses a wire 5, and a support for the pressing section 6. At the same time, an ultrasonic horn 12 transmits ultrasonic waves from an ultrasonic oscillator 11 to the pressing part 6, and a bump 9 is placed on the electrode 2 of the substrate 1.
It is comprised of a high-pressure gas nozzle 10 that supplies high-pressure gas to blow away debris, etc. from the wire 5 after it is formed.
第2図(a)で円形で囲んだ部分(A部)の詳細を同図
(b)を用いて説明する。The details of the portion (A section) surrounded by a circle in FIG. 2(a) will be explained using FIG. 2(b).
まず押圧部6の先端部7に設けられた凹部8はバンプ9
を形成するための金型に相当するもので、凹部8で形成
されるバンプ9の断面形状は直径の異なる円筒を積み重
ねた形であり、下の円筒は上の円筒より直径が大きく高
さが低い構造となっている。また種々の形状の凹部8を
有する先端部7を予め準備しておき、必要に応じて交換
できるようにしている。押圧部6の素材としては超強力
鋼等が適している。また押圧部6の一部に設けた案内ガ
イド4は線材5を通す貫通孔である。First, the recess 8 provided at the tip 7 of the pressing part 6 is formed into a bump 9.
The cross-sectional shape of the bump 9 formed by the recess 8 is a stack of cylinders with different diameters, with the lower cylinder having a larger diameter and height than the upper cylinder. It has a low structure. Further, the tip portion 7 having concave portions 8 of various shapes is prepared in advance so that it can be replaced as necessary. A suitable material for the pressing portion 6 is ultra-strong steel or the like. Further, the guide 4 provided in a part of the pressing portion 6 is a through hole through which the wire 5 is passed.
クランパー部3は押圧部6と連動して線材5を送り出し
たり、保持したりする機能を有する。線材5の直径は高
精度に仕上げられているため、凹部8で形成されるバン
プ9の高さはきわめて均一となる。The clamper section 3 has a function of feeding out and holding the wire rod 5 in conjunction with the pressing section 6. Since the diameter of the wire 5 is finished with high precision, the height of the bump 9 formed in the recess 8 is extremely uniform.
なお以上説明した実施例では線材5を用いたバンプ形成
方法およびバンプ形成装置について説明したが、この線
材5の代わりに板材を用いても同様に基板lの電極2上
にバンプ9を形成することができる。さらには第3図(
a) 、 (b)に示すように押圧部6の先端部7の凹
部8の形状を直方体1円錐形またはその他の形状とする
ことにより、種々の形状のバンプが容易に形成できる。Note that in the embodiments described above, a bump forming method and a bump forming apparatus using the wire 5 have been described, but even if a plate material is used instead of the wire 5, the bumps 9 can be similarly formed on the electrode 2 of the substrate l. I can do it. Furthermore, Figure 3 (
As shown in a) and (b), by making the shape of the recess 8 of the tip 7 of the pressing part 6 into a rectangular parallelepiped conical shape or other shape, bumps of various shapes can be easily formed.
発明の効果
以上のように本発明のバンプ形成方法は、上下する押圧
部の先端部に凹部を設け、その押圧部で線材または板材
を基板の電極に押し付け、バンプ形成すると同時にその
バンプを電極に接着することにより、蒸着工程、レジス
ト膜形成工程およびメツキ工程を必要とせず、容易にバ
ンプを形成することができる。また本発明のバンプ形成
装置では押圧部の先端部を交換可能にしており、異なる
形状の凹部を形成した先端部を準備しておくことにより
その形状に対応した形状のバンプを容易に形成すること
ができる。Effects of the Invention As described above, in the bump forming method of the present invention, a concave portion is provided at the tip of the pressing portion that moves up and down, and the pressing portion presses a wire or plate material against the electrode of the substrate, and at the same time as forming a bump, the bump is attached to the electrode. By adhering, bumps can be easily formed without requiring a vapor deposition process, a resist film forming process, and a plating process. Further, in the bump forming apparatus of the present invention, the tip of the pressing part is made replaceable, and by preparing the tip with a recess of a different shape, it is possible to easily form a bump with a shape corresponding to the shape. I can do it.
第1図(a)〜<e>は本発明の一実施例におけるバン
プ形成方法を示す工程断面図、第2図(a)は本発明の
一実施例におけるバンプ形成装置の要部斜視図、第2図
(ロ)は第2図(a)のA部の拡大部分断面図、第3図
(a)、(ロ)は押圧部の先端部の形状を示す正面図、
第4図(a)〜(e)は従来のワイヤボンダを用いた第
1のバンプ形成方法の工程断面図、第5rj4(a)〜
(e)は従来のワイヤボンダを用いた第2のバンプ形成
方法の工程断面図、第6図は従来のメツキ法で形成した
バンプの断面図である。
1・・・・・・基板、2・・・・・・電極、5・・・・
・・線材(被加工材)、6・・・・・・押圧部、7・・
・・・・先端部、8・・・・・・凹部、9・・・・・・
バンプ。
代理人の氏名 弁理士 粟野重孝 ばか1名菓
!
図
前
第
図
図
Z
第
第
図
図FIGS. 1(a) to <e> are process sectional views showing a bump forming method in an embodiment of the present invention, FIG. 2(a) is a perspective view of essential parts of a bump forming apparatus in an embodiment of the present invention, FIG. 2(b) is an enlarged partial sectional view of part A in FIG. 2(a), FIGS. 3(a) and (b) are front views showing the shape of the tip of the pressing part,
FIGS. 4(a) to 4(e) are process cross-sectional views of the first bump forming method using a conventional wire bonder, and 5th rj4(a) to
(e) is a process cross-sectional view of a second bump forming method using a conventional wire bonder, and FIG. 6 is a cross-sectional view of a bump formed by a conventional plating method. 1...Substrate, 2...Electrode, 5...
...Wire rod (workpiece material), 6...Press section, 7...
...Tip, 8...Concavity, 9...
bump. Agent's name: Patent attorney Shigetaka Awano Baka 1 Famous Confectionery! Figure front Figure Z Figure Z
Claims (6)
供給する第1工程と、前記押圧部を用いて被加工材を押
圧しバンプを形成するとともに、そのバンプを基板の所
定の電極上に接着する第2工程とを備えたバンプ形成方
法。(1) A first step in which a workpiece is supplied directly under a pressing part having a concave portion at the tip, and the pressing part is used to press the workpiece to form a bump, and the bump is placed in a predetermined position on the substrate. A bump forming method comprising a second step of adhering onto an electrode.
に超音波振動を印加することを特徴とする請求項1記載
のバンプ形成方法。(2) The bump forming method according to claim 1, characterized in that when the pressing section is pressing the workpiece, ultrasonic vibration is applied to the pressing section.
された後供給される請求項1記載のバンプ形成方法。(3) The bump forming method according to claim 1, wherein the workpiece is supplied after being cut into a shape required for one bump in advance.
部に有し、そのバンプを基板の電極上に圧着する押圧部
と、その押圧部の直下に被加工材を供給する供給部とを
備えたバンプ形成装置。(4) A pressing part that has a concave part at its tip that presses the workpiece to form a bump, and presses the bump onto the electrode of the substrate, and a supply part that supplies the workpiece directly below the pressing part. A bump forming device comprising:
圧部に着脱可能に保持されている請求項4記載のバンプ
形成装置。(5) The bump forming device according to claim 4, wherein the tip portion having a concave portion for forming a bump is detachably held by the pressing portion.
持するクランパー部を設けた請求項4記載のバンプ形成
装置。(6) The bump forming apparatus according to claim 4, further comprising a clamper section that feeds or holds the workpiece in conjunction with the pressing section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2208585A JPH0499034A (en) | 1990-08-06 | 1990-08-06 | Bump forming method and bump forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2208585A JPH0499034A (en) | 1990-08-06 | 1990-08-06 | Bump forming method and bump forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0499034A true JPH0499034A (en) | 1992-03-31 |
Family
ID=16558628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2208585A Pending JPH0499034A (en) | 1990-08-06 | 1990-08-06 | Bump forming method and bump forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0499034A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000286298A (en) * | 1999-01-29 | 2000-10-13 | Matsushita Electric Ind Co Ltd | Electronic component mounting method and device |
| JP2000286297A (en) * | 1999-01-29 | 2000-10-13 | Matsushita Electric Ind Co Ltd | Electronic component mounting method and device |
| US7624492B1 (en) * | 1999-10-13 | 2009-12-01 | Murata Manufacturing Co., Ltd. | Method for manufacturing electronic parts |
| US7683482B2 (en) | 1999-01-29 | 2010-03-23 | Panasonic Corporation | Electronic component unit |
| JP2013187383A (en) * | 2012-03-08 | 2013-09-19 | Denso Corp | Method for manufacturing bump structure |
-
1990
- 1990-08-06 JP JP2208585A patent/JPH0499034A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000286298A (en) * | 1999-01-29 | 2000-10-13 | Matsushita Electric Ind Co Ltd | Electronic component mounting method and device |
| JP2000286297A (en) * | 1999-01-29 | 2000-10-13 | Matsushita Electric Ind Co Ltd | Electronic component mounting method and device |
| US7683482B2 (en) | 1999-01-29 | 2010-03-23 | Panasonic Corporation | Electronic component unit |
| US8007627B2 (en) | 1999-01-29 | 2011-08-30 | Panasonic Corporation | Electronic component mounting method and apparatus |
| US7624492B1 (en) * | 1999-10-13 | 2009-12-01 | Murata Manufacturing Co., Ltd. | Method for manufacturing electronic parts |
| US8726494B2 (en) | 1999-10-13 | 2014-05-20 | Murata Manufacturing Co., Ltd. | Holding jig for electronic parts |
| JP2013187383A (en) * | 2012-03-08 | 2013-09-19 | Denso Corp | Method for manufacturing bump structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6555764B1 (en) | Integrated circuit contactor, and method and apparatus for production of integrated circuit contactor | |
| US20020149118A1 (en) | Semiconductor device and bump formation method | |
| KR19980071549A (en) | Plate printing method and apparatus, method and apparatus for forming bump or wiring pattern, bump electrode and printed wiring board | |
| WO2019155959A1 (en) | Method for manufacturing semiconductor device | |
| KR20240023575A (en) | Method of manufacturing semiconductor device | |
| JPH0499034A (en) | Bump forming method and bump forming device | |
| US20030056665A1 (en) | Printing screen | |
| JP2011108948A (en) | Adhesive supply device and method of manufacturing the same | |
| JP2024009340A (en) | Manufacturing method and equipment for semiconductor devices | |
| JP3377411B2 (en) | Flip chip mounting structure | |
| JP3676995B2 (en) | Bump bonding method and apparatus | |
| US20040203187A1 (en) | Method for manufacturing semiconductor wafer | |
| JPH10261664A (en) | Semiconductor element, method of forming bump electrode, and method of wire bonding | |
| JP2586811B2 (en) | Solder bump formation method | |
| JP2005079211A (en) | Ultrasonic flip chip mounting method | |
| JPH09214117A (en) | Formation of solder bump | |
| JPS62206857A (en) | Forming method for projection-shaped electrode | |
| JPH10261645A (en) | Semiconductor element, method of forming bump electrode, and method of wire bonding | |
| TW389964B (en) | Method for forming projected electrode and ultrasonic junction apparatus | |
| JP3202193B2 (en) | Wire bonding method | |
| JP2574531B2 (en) | Method of forming bump electrode | |
| JPH1074767A (en) | Method and apparatus for forming fine ball bumps | |
| JPH0375394A (en) | plating equipment | |
| JPH0566982U (en) | Solder bump formation method | |
| JP2004111675A (en) | Mounting method |