JPH05148680A - Method for purifying aluminum electroplating bath and plating method - Google Patents
Method for purifying aluminum electroplating bath and plating methodInfo
- Publication number
- JPH05148680A JPH05148680A JP30777791A JP30777791A JPH05148680A JP H05148680 A JPH05148680 A JP H05148680A JP 30777791 A JP30777791 A JP 30777791A JP 30777791 A JP30777791 A JP 30777791A JP H05148680 A JPH05148680 A JP H05148680A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- aluminum
- bath
- bubbling
- free gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007747 plating Methods 0.000 title claims abstract description 106
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 51
- 229910052782 aluminium Inorganic materials 0.000 title claims description 51
- 238000000034 method Methods 0.000 title claims description 26
- 238000009713 electroplating Methods 0.000 title claims description 6
- 239000007789 gas Substances 0.000 claims description 31
- 230000005587 bubbling Effects 0.000 claims description 21
- -1 aluminum halide Chemical class 0.000 claims description 15
- 125000000217 alkyl group Chemical group 0.000 claims description 7
- 125000004432 carbon atom Chemical group C* 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 6
- 238000000746 purification Methods 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 239000000178 monomer Substances 0.000 claims description 5
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 4
- 229920002554 vinyl polymer Polymers 0.000 claims description 4
- 230000010355 oscillation Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 abstract description 10
- 150000004820 halides Chemical class 0.000 abstract description 5
- 239000000203 mixture Substances 0.000 abstract description 3
- 238000007664 blowing Methods 0.000 abstract 2
- 239000000243 solution Substances 0.000 description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000007670 refining Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 4
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910001868 water Inorganic materials 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 3
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical group 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- WVDDUSFOSWWJJH-UHFFFAOYSA-N 1-methyl-3-propylimidazol-1-ium Chemical compound CCCN1C=C[N+](C)=C1 WVDDUSFOSWWJJH-UHFFFAOYSA-N 0.000 description 2
- AJRFBXAXVLBZMP-UHFFFAOYSA-M 1-methyl-3-propylimidazol-1-ium;bromide Chemical compound [Br-].CCCN1C=C[N+](C)=C1 AJRFBXAXVLBZMP-UHFFFAOYSA-M 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- FJKIXWOMBXYWOQ-UHFFFAOYSA-N ethenoxyethane Chemical compound CCOC=C FJKIXWOMBXYWOQ-UHFFFAOYSA-N 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000000967 suction filtration Methods 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- GWLWDTKPKQMLRH-UHFFFAOYSA-N 1,3-dimethylimidazolidin-1-ium;chloride Chemical compound [Cl-].CN1CC[NH+](C)C1 GWLWDTKPKQMLRH-UHFFFAOYSA-N 0.000 description 1
- UJWVKWKGJHCBCX-UHFFFAOYSA-N 1-butyl-1h-imidazol-1-ium;bromide Chemical compound [Br-].CCCCN1C=C[NH+]=C1 UJWVKWKGJHCBCX-UHFFFAOYSA-N 0.000 description 1
- UPPMLNGLVORNMG-UHFFFAOYSA-N 1-ethyl-3-methylimidazolidine;hydrochloride Chemical compound [Cl-].CC[NH+]1CCN(C)C1 UPPMLNGLVORNMG-UHFFFAOYSA-N 0.000 description 1
- CPWOTLSSFIMGOD-UHFFFAOYSA-N 1-propyl-4,5-dihydro-1h-imidazol-1-ium;chloride Chemical compound [Cl-].CCC[NH+]1CCN=C1 CPWOTLSSFIMGOD-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical compound C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 description 1
- BIWFJGMQTHQTJE-UHFFFAOYSA-N 3-ethyl-4,5-dihydro-1h-imidazol-3-ium;chloride Chemical compound Cl.CCN1CCN=C1 BIWFJGMQTHQTJE-UHFFFAOYSA-N 0.000 description 1
- KTVVBUZEEYTRHU-UHFFFAOYSA-N 3-methyl-4,5-dihydro-1h-imidazol-3-ium;chloride Chemical compound [Cl-].C[N+]1=CNCC1 KTVVBUZEEYTRHU-UHFFFAOYSA-N 0.000 description 1
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- OBWNBDWJHCQRIQ-UHFFFAOYSA-N Cl.CCCCN1CCNC1 Chemical compound Cl.CCCCN1CCNC1 OBWNBDWJHCQRIQ-UHFFFAOYSA-N 0.000 description 1
- 208000005156 Dehydration Diseases 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Natural products OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 1
- RAXXELZNTBOGNW-UHFFFAOYSA-O Imidazolium Chemical group C1=C[NH+]=CN1 RAXXELZNTBOGNW-UHFFFAOYSA-O 0.000 description 1
- 229910010082 LiAlH Inorganic materials 0.000 description 1
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- SLQWJPPOGWTPNF-UHFFFAOYSA-N [Cl-].C(CCCCCCC)[NH+]1C=NCC1 Chemical compound [Cl-].C(CCCCCCC)[NH+]1C=NCC1 SLQWJPPOGWTPNF-UHFFFAOYSA-N 0.000 description 1
- XDCXZGJZSZMULB-UHFFFAOYSA-N [Cl-].CCN1CC[NH+](CC)C1 Chemical compound [Cl-].CCN1CC[NH+](CC)C1 XDCXZGJZSZMULB-UHFFFAOYSA-N 0.000 description 1
- GVMBDPSYYOHOBK-UHFFFAOYSA-N [Cl-].C[NH+]1CN(CC1)CCC Chemical compound [Cl-].C[NH+]1CN(CC1)CCC GVMBDPSYYOHOBK-UHFFFAOYSA-N 0.000 description 1
- 125000005396 acrylic acid ester group Chemical group 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- DOBRDRYODQBAMW-UHFFFAOYSA-N copper(i) cyanide Chemical compound [Cu+].N#[C-] DOBRDRYODQBAMW-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012510 hollow fiber Substances 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 229940042795 hydrazides for tuberculosis treatment Drugs 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000005397 methacrylic acid ester group Chemical group 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- KKFHAJHLJHVUDM-UHFFFAOYSA-N n-vinylcarbazole Chemical compound C1=CC=C2N(C=C)C3=CC=CC=C3C2=C1 KKFHAJHLJHVUDM-UHFFFAOYSA-N 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- HJWLCRVIBGQPNF-UHFFFAOYSA-N prop-2-enylbenzene Chemical compound C=CCC1=CC=CC=C1 HJWLCRVIBGQPNF-UHFFFAOYSA-N 0.000 description 1
- 150000003230 pyrimidines Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 150000007934 α,β-unsaturated carboxylic acids Chemical class 0.000 description 1
Landscapes
- Electroplating And Plating Baths Therefor (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、常温溶融塩浴による非
水溶液電気アルミニウムめっきにおいて、簡単な設備
で、常に安定しためっき外観及び膜圧の均一性を得るた
めの精製方法及びめっき方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a refining method and a plating method for always obtaining stable plating appearance and uniform film pressure with simple equipment in non-aqueous solution aluminum electroplating in a room temperature molten salt bath. Is.
【0002】[0002]
【従来の技術】アルミニウム金属材が優れた耐食性を有
していることは良く知られている。しかし、アルミニウ
ムは酸素に対する親和力が大きく、また電位が水素より
卑であるため、水溶液からの電析は困難である。そのた
め従来からアルミニウム電気めっきは、有機溶媒系めっ
き浴や溶融塩浴にて行なわれている。有機溶媒系のめっ
き浴としては、AlCl3-LiAlH4またはLiH とを、エーテル
やテトラヒドロフランに溶解したもの、NaF ・2Al(C2H
5)3 のトルエン溶液が代表的である。しかし、これらの
浴は、空気や水と接触した場合、爆発する危険性があ
り、取り扱いが困難であった。また、爆発の危険がない
浴として、アルミニウムハロゲン化物と、アルキルピリ
ジニウムハロゲン化物やアルキルイミダゾリウムハロゲ
ン化物等の常温溶融塩浴も知られている。2. Description of the Related Art It is well known that aluminum metal materials have excellent corrosion resistance. However, since aluminum has a high affinity for oxygen and its electric potential is baser than hydrogen, it is difficult to deposit aluminum from an aqueous solution. Therefore, aluminum electroplating has been conventionally performed in an organic solvent-based plating bath or a molten salt bath. As the organic solvent-based plating bath, AlCl 3 -LiAlH 4 or LiH dissolved in ether or tetrahydrofuran, NaF · 2Al (C 2 H
5 ) A toluene solution of 3 is typical. However, these baths have a risk of exploding when they come into contact with air or water, and are difficult to handle. In addition, as a bath without danger of explosion, a room temperature molten salt bath of an aluminum halide and an alkylpyridinium halide or an alkylimidazolium halide is also known.
【0003】常温溶融塩浴による電気アルミニウムめっ
きは、アルミニウムハロゲン化物を使用しているため、
Fe ,Pb ,SO4 ,H2O 等の不純物を含有している。ま
た、ピリジニウムハロゲン化物やイミダゾリウムハロゲ
ン化物は吸湿性が高い。この原因により、純度の高いめ
っきが得られないだけでなく、安定しためっき外観を得
ることも困難であった。めっき液の精製方法として、金
属アルミニウムを浸漬し、置換精製することも提案され
ているが(特開昭64−17889)、本発明者らの実
験によれば、金属アルミニウムを浸漬放置するだけで
は、常に安定しためっき皮膜を得ることは困難であっ
た。また、これらの溶融塩浴は、気密性の良い設備(装
置)を使用し、不活性な乾燥無酸素雰囲気中でめっきを
実施しないと、酸素、水および吸湿によって発生する塩
化水素が浴中に溶解し、めっき液を劣化させるばかりで
なく、めっき時にアルミニウムの電着を阻害し、暗灰色
の粗析出や不均一な粒状析出となり易いという問題があ
る。Electrolytic aluminum plating in a room temperature molten salt bath uses aluminum halides,
It contains impurities such as Fe, Pb, SO 4 , and H 2 O. Further, pyridinium halides and imidazolium halides have high hygroscopicity. Due to this cause, not only plating with high purity cannot be obtained, but also stable plating appearance is difficult to obtain. As a method of refining a plating solution, it has been proposed to immerse metallic aluminum and perform displacement purification (Japanese Patent Laid-Open No. 64-17889). However, according to the experiments conducted by the present inventors, it is possible to immerse metallic aluminum and leave it alone. However, it was difficult to always obtain a stable plating film. In addition, these molten salt baths use equipment (equipment) with good airtightness, and if plating is not performed in an inert dry and oxygen-free atmosphere, hydrogen chloride generated by oxygen, water and moisture absorption will occur in the bath. Not only does it dissolve and deteriorate the plating solution, but it also hinders the electrodeposition of aluminum during plating, which tends to cause dark gray coarse precipitation and uneven granular precipitation.
【0004】[0004]
【発明が解決しようとする課題】本発明は、常温溶融塩
浴にてめっきする場合に、気密性の良い設備を使用しな
くとも、常に安定して均一なめっき皮膜を得ることがで
きるめっき液精製方法とめっき方法とを提供することを
目的とする。DISCLOSURE OF THE INVENTION The present invention provides a plating solution which, when plating in a room temperature molten salt bath, can always obtain a stable and uniform plating film without using equipment with good airtightness. It is an object to provide a refining method and a plating method.
【0005】[0005]
【課題を解決するための手段】本発明は、(A)アルミ
ニウムハロゲン化物と(B)モノアルキル−またはジア
ルキル−イミダゾリウムハロゲン化物からなる常温溶融
塩浴に、金属アルミニウムを浸漬し、かつ不活性な乾燥
無酸素ガスをバブリングすることにより、アルミニウム
の電着を阻害する不純金属、酸素、水および塩化水素を
除去でき、常に安定して、白色の緻密なアルミニウムめ
っき皮膜が得られるめっき液を得ることができるとの知
見に基いてなされたのである。更に、上記精製液また
は、その液に特定の重合体を添加しためっき液を用い、
不活性な乾燥無酸素ガスを浴中にバブリングしながらめ
っきを実施することにより、酸素や塩化水素等の再溶解
を防止するとともに、溶存ガスを除去する効果により、
気密性を有さない設備においても、均一なめっき皮膜が
得られるとの知見に基づいてなされたのである。According to the present invention, metallic aluminum is immersed in an ambient temperature molten salt bath composed of (A) aluminum halide and (B) monoalkyl- or dialkyl-imidazolium halide and is inert. By bubbling a dry oxygen-free gas, it is possible to remove impure metals, oxygen, water and hydrogen chloride that inhibit the electrodeposition of aluminum, and obtain a plating solution that is always stable and gives a white dense aluminum plating film. It was made based on the knowledge that it was possible. Furthermore, using the above-mentioned purified solution or a plating solution obtained by adding a specific polymer to the solution,
By performing plating while bubbling an inert dry oxygen-free gas in the bath, while preventing redissolution of oxygen, hydrogen chloride, etc., the effect of removing dissolved gas,
This was done based on the finding that a uniform plating film can be obtained even in equipment that does not have airtightness.
【0006】すなわち、本発明は、(A) アルミニウムハ
ロゲン化物と、(B) モノアルキル−またはジアルキル−
イミダゾリウムハロゲン化物とを1:1〜3:1のモル
比で混合溶融してなる電気アルミニウムめっき液に金属
アルミニウムを浸漬し、かつ不活性な乾燥無酸素ガスを
バブリングすることを特徴とする電気アルミニウムめっ
き液の精製方法を提供する。本件発明は又、請求項1に
記載の精製方法によって得られためっき液を使用し、不
活性な乾燥無酸素ガスをめっき浴中にバブリングしなが
ら浴温25〜80℃、電流密度0.2〜10A/dm2 で、
直流またはパルス電流によりめっきすることを特徴とす
る電気アルミニウムめっき方法を提供する。That is, the present invention relates to (A) an aluminum halide and (B) a monoalkyl- or dialkyl-
Electricity characterized by immersing metallic aluminum in an electric aluminum plating solution prepared by mixing and melting imidazolium halide with a molar ratio of 1: 1 to 3: 1 and bubbling an inert dry oxygen-free gas. A method for purifying an aluminum plating solution is provided. The present invention also uses the plating solution obtained by the refining method according to claim 1, while bubbling an inert dry oxygen-free gas into the plating bath at a bath temperature of 25 to 80 ° C. and a current density of 0.2. At ~ 10 A / dm 2 ,
Provided is a method for electroplating aluminum, which comprises plating with direct current or pulsed current.
【0007】本発明に用いられるめっき浴は、(A)ア
ルミニウムハロゲン化物と(B)モノアルキル−または
ジアルキル−イミダゾリウムハロゲン化物とを1:1〜
3:1のモル比で混合溶融して調整される。(A)成分
と(B)成分のモル比は2:1とした場合が最適であ
る。ここでアルミニウムハロゲン化物が1:1より少な
いとイミダゾリウムカチオンの分解と思われる反応が起
こり、3:1より多い場合は、めっき浴の粘度が上昇す
るため浴の劣化及びめっき不良となり好ましくない。
(A)成分のアルミニウムハロゲン化物はAlX3で表さ
れ、Xは塩素、臭素、ヨウ素などのハロゲンであり、塩
素が好ましい。また、(B)成分のモノアルキル−また
はジアルキル−イミダゾリウムハロゲン化物としては一
般式(2)で表される1−アルキル又は1,3−ジアル
キルイミダゾリウムハロゲン化物が好ましい。The plating bath used in the present invention comprises (A) an aluminum halide and (B) a monoalkyl- or dialkyl-imidazolium halide in a ratio of 1: 1 to 1.
It is prepared by mixing and melting at a molar ratio of 3: 1. The optimum ratio is 2: 1 for the component (A) and the component (B). If the amount of aluminum halide is less than 1: 1, a reaction that seems to be decomposition of the imidazolium cation occurs, and if it is more than 3: 1, the viscosity of the plating bath increases and the bath deteriorates and plating is unfavorable.
The aluminum halide as the component (A) is represented by AlX 3 , where X is a halogen such as chlorine, bromine or iodine, and chlorine is preferable. As the monoalkyl- or dialkyl-imidazolium halide of the component (B), 1-alkyl or 1,3-dialkylimidazolium halide represented by the general formula (2) is preferable.
【0008】[0008]
【化2】 [Chemical 2]
【0009】〔式中R6 は炭素数1〜6、好ましくは1
〜3のアルキル基、R7 は炭素数1〜12、好ましくは
1〜5のアルキル基、Xはハロゲンである。〕 上記アルキルイミダゾリウムハロゲン化物として、具体
的には、1−メチルイミダゾリニウムクロリド、1−エ
チルイミダゾリニウムクロリド、1−プロピルイミダゾ
リニウムクロリド、1−オクチルイミダゾリニウムクロ
リド、1−メチル−3−エチルイミダゾリニウムクロリ
ド、1,3−ジメチルイミダゾリニウムクロリド、1,
3−ジエチルイミダゾリニウムクロリド、1−メチル−
3−プロピルイミダゾリニウムクロリド、1−ブチル−
3−ブチルイミダゾリニウムクロリド等、これらのハロ
ゲンを臭素やヨウ素に代えたものの1種又は2種以上の
混合物があげられる。[In the formula, R 6 has 1 to 6 carbon atoms, preferably 1
To 3 alkyl groups, R 7 is an alkyl group having 1 to 12 carbon atoms, preferably 1 to 5 carbon atoms, and X is halogen. ] As the above-mentioned alkyl imidazolium halide, specifically, 1-methyl imidazolinium chloride, 1-ethyl imidazolinium chloride, 1-propyl imidazolinium chloride, 1-octyl imidazolinium chloride, 1-methyl- 3-ethylimidazolinium chloride, 1,3-dimethylimidazolinium chloride, 1,
3-diethylimidazolinium chloride, 1-methyl-
3-Propylimidazolinium chloride, 1-butyl-
Examples thereof include 3-butylimidazolinium chloride and the like, and one or a mixture of two or more of those in which these halogens are replaced by bromine or iodine.
【0010】次に、本発明の精製方法について説明す
る。精製方法は、上記溶融塩浴に不活性な乾燥無酸素ガ
スをバブリングしながら、金属アルミニウムを浸漬す
る。つまり、金属アルミニウムの存在下で溶融塩浴に不
活性な乾燥無酸素ガスをバブリングする。その時の温度
は80〜100℃が好ましく、また時間は4時間以上が
好ましい。冷却後にはアルミニウムめっき液として使用
できるが、なるべくろ過を行なってから使用したほうが
良い。ここで、金属アルミニウムの純度は、99.99%
以上のものが好ましい。また、浸漬する金属アルミニウ
ムの表面積はめっき液1リットル当たり20〜50dm2
とするのが望ましい。また、金属アルミニウムは表面積
の大きいアルミニウム線もしくはアルミニウム粉末が好
ましい。温度が80℃より低い温度では、置換反応が遅
く、100℃を越えると塩化アルミニウムの飽和蒸気が
発生し、好ましくないからである。精製する時間は、4
時間より少ないと置換反応が十分でなく、安定しためっ
き皮膜が得にくいからである。不活性な乾燥無酸素ガス
のバブリング量は、1リットル当たり0.5リットル/mi
n 程度で良い。Next, the purification method of the present invention will be described. In the refining method, metallic aluminum is immersed in the molten salt bath while bubbling an inert dry oxygen-free gas. That is, an inert dry oxygen-free gas is bubbled through the molten salt bath in the presence of metallic aluminum. The temperature at that time is preferably 80 to 100 ° C., and the time is preferably 4 hours or more. It can be used as an aluminum plating solution after cooling, but it is better to use it after filtering as much as possible. Here, the purity of metallic aluminum is 99.99%
The above is preferable. The surface area of the metallic aluminum to be dipped is 20 to 50 dm 2 per liter of plating solution.
Is desirable. The metal aluminum is preferably an aluminum wire or aluminum powder having a large surface area. This is because if the temperature is lower than 80 ° C, the substitution reaction is slow, and if it exceeds 100 ° C, saturated vapor of aluminum chloride is generated, which is not preferable. Purification time is 4
This is because if it is less than the time, the substitution reaction is not sufficient, and it is difficult to obtain a stable plating film. Bubbling amount of inert dry oxygen-free gas is 0.5 liter / mi per liter.
n is enough.
【0011】めっきは、上記方法によって精製しためっ
き液、またはその液に一般式(1)で表される重合体を
0.1〜50g/1添加しためっき液を用い、不活性乾燥
無酸素ガスをめっき液中にバブリングしながら行なうの
がよい。For the plating, the plating solution purified by the above method, or the polymer represented by the general formula (1) is added to the solution.
It is preferable to use a plating solution added with 0.1 to 50 g / 1 while bubbling an inert dry oxygen-free gas into the plating solution.
【0012】[0012]
【化3】 [Chemical 3]
【0013】〔式中R1 〜R3 はそれぞれ、水素または
炭素数1〜5のアルキル基、R4 及びR5 は、それぞれ
水素または炭素数1〜2のアルキル基、Aは他の共重合
性ビニルモノマーであり、nが2以上、mが0以上の整
数であり、n+mの合計は一般式(1)の重合体の重量
平均分子量が80000になるまでの任意の数であ
る。〕 式(1)で表される重合体は、皮膜の均一性、平滑性及
びデンドライド析出防止のために添加するものであり、
スチレン、α−メチルスチレン、ビニルトルエン、m−
メチルスチレンなどのスチレン系ホモポリマー、これら
同士のコポリマー、あるいは、スチレン系モノマーと他
の重合性のビニール系モノマーとのコポリマーがあげら
れる。また、コポリマーである場合の他のビニル系モノ
マーAの例としては、無水マレイン酸、マレイン酸、ア
クリル酸、メタクリル酸、メチルメタクリレート、グリ
シジルメタクリレート、イタコン酸、アクリルアミド、
アクリルニトリル、マレイミド、ビニルピリジン、ビニ
ルカルバゾール、アクリル酸エステル、メタクリル酸エ
ステル、フマル酸エステル、ビニルエチルエーテル、塩
化ビニルなどがあげられる。これらのうち、炭素数が3
〜10のα,β−不飽和カルボン酸又はそのアルキル
(炭素数1〜3)エステルが好ましい。これらのうち、
分子量300〜5000のポリスチレン、ポリ−α−メ
チルスチレン等が好ましい。添加量は、0.1〜50g/
1、好ましくは1〜10g/1であるが、これは、0.1
g/1より少ないと、平滑性、デンドライド防止効果が
少なく、50g/1を越えると黒色析出物が発生し、め
っき不良となり、好ましくない。なお、光沢剤として、
ヒドラジド類、ピリミジン、1,10−フェナントロリ
ン等の含窒素複素環化合物等を添加しても良い。[Wherein R 1 to R 3 are each hydrogen or an alkyl group having 1 to 5 carbon atoms, R 4 and R 5 are each hydrogen or an alkyl group having 1 to 2 carbon atoms, and A is another copolymerization Is a vinyl monomer, n is an integer of 2 or more, m is an integer of 0 or more, and the sum of n + m is an arbitrary number until the weight average molecular weight of the polymer of the general formula (1) becomes 80,000. The polymer represented by the formula (1) is added for the purpose of film uniformity, smoothness and prevention of dendrite precipitation.
Styrene, α-methylstyrene, vinyltoluene, m-
Examples thereof include styrene homopolymers such as methylstyrene, copolymers thereof, and copolymers of styrene monomers and other polymerizable vinyl monomers. In addition, examples of other vinyl-based monomers A in the case of a copolymer include maleic anhydride, maleic acid, acrylic acid, methacrylic acid, methyl methacrylate, glycidyl methacrylate, itaconic acid, acrylamide,
Examples thereof include acrylonitrile, maleimide, vinyl pyridine, vinyl carbazole, acrylic acid ester, methacrylic acid ester, fumaric acid ester, vinyl ethyl ether and vinyl chloride. Of these, carbon number 3
An α, β-unsaturated carboxylic acid having 10 to 10 or an alkyl (C 1 to C 3) ester thereof is preferable. Of these,
Polystyrene having a molecular weight of 300 to 5,000, poly-α-methylstyrene and the like are preferable. The addition amount is 0.1 to 50 g /
1, preferably 1 to 10 g / 1, which is 0.1
If it is less than g / 1, the smoothness and dendrite-preventing effect are small, and if it exceeds 50 g / 1, black precipitates are generated, resulting in poor plating, which is not preferable. As a brightener,
Nitrogen-containing heterocyclic compounds such as hydrazides, pyrimidines and 1,10-phenanthroline may be added.
【0014】バブリングする不活性乾燥無酸素ガスの流
量は、浴量1リットル当たり0.3〜1リットル/min と
するのが望ましい。0.3リットル/min より少ないと、
脱気効果が少なく、1リットル/minを越えても効果は
変わらない。逆に、ガス消費量が大きく不経済である。
また、本発明に用いられる不活性乾燥無酸素ガスは、乾
燥N2 ガス、Ar ガスなどの不活性ガスが選ばれる。乾
燥N2 ガスは中空糸膜による分離、高圧下での酸素吸着
法、水素ガス添加による脱酸処理、冷却と加熱による脱
水処理によって得られたものを使用しても良い。アルミ
ニウムめっきは、アルミニウムを陽極とし、直流または
パルス電流により浴温25〜80℃、好ましくは50〜
60℃、電流密度0.2〜10A/dm2 好ましくは0.5〜
6A/dm2 で行なうのが良い。本発明では、不活性乾燥
無酸素ガスのバブリングと陰極揺動を併用することによ
り、さらに外観が均一となり、膜厚のばらつきも少なく
なる。バブリング流量及び陰極揺動速度と膜厚分布の関
係を図1及び図2に示した。The flow rate of the bubbling inert dry oxygen-free gas is preferably 0.3 to 1 liter / min per liter of the bath. If less than 0.3 liter / min,
The deaeration effect is small and the effect does not change even if it exceeds 1 liter / min. On the contrary, the gas consumption is large and uneconomical.
The inert dry oxygen-free gas used in the present invention is selected from inert gases such as dry N 2 gas and Ar gas. As the dry N 2 gas, those obtained by separation by a hollow fiber membrane, oxygen adsorption method under high pressure, deoxidation treatment by hydrogen gas addition, dehydration treatment by cooling and heating may be used. Aluminum plating uses aluminum as an anode, and the bath temperature is 25 to 80 ° C., preferably 50 to 50 by direct current or pulse current.
60 ° C., current density 0.2 to 10 A / dm 2 preferably 0.5 to
It is better to do it at 6 A / dm 2 . In the present invention, the bubbling of the inert dry oxygen-free gas and the cathode oscillation are used in combination to further make the appearance uniform and reduce the variation in the film thickness. The relationship between the bubbling flow rate, the cathode oscillation speed, and the film thickness distribution is shown in FIGS. 1 and 2.
【0015】なお、本発明のめっき方法によれば、大気
中でのめっきが可能であるが、めっき浴の安定性向上の
ため、めっき終了後はめっき槽に不活性乾燥無酸素ガス
をパージして密閉し、保管することが望ましい。According to the plating method of the present invention, it is possible to perform plating in the atmosphere. However, in order to improve the stability of the plating bath, the plating bath is purged with an inert dry oxygen-free gas after the completion of plating. It is desirable to keep it closed and stored.
【0016】[0016]
【発明の効果】本発明によれば、気密性の良い設備、装
置を使用しなくても、簡単な設備で均一で平滑なアルミ
ニウムめっきを常温もしくは低温(40〜60℃)にて
得ることができるため、工業化にも有利である。次に実
施例により本発明を説明する。According to the present invention, uniform and smooth aluminum plating can be obtained at room temperature or low temperature (40 to 60 ° C.) with simple equipment without using equipment and equipment having good airtightness. Since it is possible, it is advantageous for industrialization. Next, the present invention will be described with reference to examples.
【0017】[0017]
実施例1 AlCl3 と1−メチル−3−プロピルイミダゾリウムブロ
マイドとを2:1のモル比に混合溶融してなるめっき浴
に、浴量1リットルあたりに純度99.99%のアルミニ
ウム線(1mmφ)80mを浸漬し、乾燥N2 ガスを0.5
リットル/minでバブリングしながら、浴温80〜90
℃の間で8時間放置した。そして、冷却後、ガラス繊維
ろ紙にて吸引ろ過を行ない粉末状の黒色沈殿物を除去
し、電気アルミニウムめっき浴とした。このめっき液を
原子吸光光度計にて分析すると、精製前には16ppm 検
出されたFe は4ppm まで減少した。鉛は検出されなか
った。次に陰極として用いる銅板(板厚0.3mm)に対
し、前処理としてアルカリ脱脂、電解洗浄、および酸洗
を行ない、水洗後乾燥を行なった。めっきは前記銅板を
陰極、アルミニウム板(純度99.99%)を陽極とし
て、40℃に保った前記めっき浴に浸漬し、乾燥N2 ガ
ス雰囲気中にて直流電流2A/dm2 で15分間めっきを
行なった。めっき浴はスターラーで攪拌した。これによ
り、電流効率95%以上、膜厚6μmの白色の緻密なア
ルミニウムめっきが得られた。Example 1 In a plating bath prepared by mixing and melting AlCl 3 and 1-methyl-3-propylimidazolium bromide in a molar ratio of 2: 1, an aluminum wire (1 mmφ) having a purity of 99.99% per 1 liter of the bath was prepared. ) Immerse 80 m and dry N 2 gas to 0.5
Bath temperature 80-90 while bubbling at l / min
It was left for 8 hours between ° C. Then, after cooling, suction filtration was performed with a glass fiber filter paper to remove the powdery black precipitate, and the electrolytic aluminum plating bath was obtained. When this plating solution was analyzed by an atomic absorption spectrophotometer, Fe detected at 16 ppm before purification was reduced to 4 ppm. No lead was detected. Next, a copper plate (plate thickness: 0.3 mm) used as a cathode was subjected to alkali degreasing, electrolytic cleaning, and pickling as pretreatments, followed by washing with water and drying. For the plating, the copper plate was used as a cathode and the aluminum plate (purity 99.99%) as an anode was immersed in the plating bath kept at 40 ° C. and plated at a direct current of 2 A / dm 2 for 15 minutes in a dry N 2 gas atmosphere. Was done. The plating bath was stirred with a stirrer. As a result, a white dense aluminum plating having a current efficiency of 95% or more and a film thickness of 6 μm was obtained.
【0018】実施例2 めっきする雰囲気を大気中とし、実施例1と同様の方法
によって精製しためっき浴に重量平均分子量5000の
ポリスチレンを4g/1添加しためっき浴を用い、乾燥
N2 ガスをめっき浴中に1リットル当たり0.5リットル
/min バブリングしながら、実施例1と同様の前処理を
行なった銅板を陰極、アルミニウム板を陽極として、浴
温50℃にて2A/dm2 で30分間めっきを行なった。
これにより、電流効率95%、膜厚11.4μmの白色で
平滑なアルミニウムめっきが得られた。 実施例3 めっきする雰囲気を大気中とし、乾燥Ar ガスをめっき
浴中に1リットル当たり1.0リットル/min の流量にて
バブリングしながらめっきする以外は、実施例2と同様
の方法にてめっきを行なった。これにより電流効率95
%膜厚11.4μmの白色で平滑なアルミニウムめっきが
得られた。Example 2 The atmosphere for plating was set to the air, and 4 g / 1 of polystyrene having a weight average molecular weight of 5000 was added to the plating bath purified by the same method as in Example 1 to dry N 2 gas. While bubbling in the bath at 0.5 liter / min per liter, the copper plate pretreated in the same manner as in Example 1 was used as the cathode and the aluminum plate as the anode, and the bath temperature was 50 ° C. and 2 A / dm 2 for 30 minutes. Plated.
As a result, white and smooth aluminum plating having a current efficiency of 95% and a film thickness of 11.4 μm was obtained. Example 3 Plating was performed in the same manner as in Example 2 except that the atmosphere for plating was atmospheric air and dry Ar gas was plated in the plating bath while bubbling at a flow rate of 1.0 liter / min per liter. Was done. As a result, the current efficiency is 95
%, White and smooth aluminum plating with a film thickness of 11.4 μm was obtained.
【0019】実施例4 AlCl3 と1−メチル−3−プロピルイミダゾリウムブロ
マイドとを2:1のモル比に混合溶融してなるめっき浴
を10リットル調整し、1リットル当たり45dm2 のア
ルミニウム線(99.99%)を浸漬し、乾燥N2 ガスを
1リットル当たり0.5リットル/min バブリングしなが
ら、浴温を80〜90℃に加熱し、12時間精製した。
このめっき液を冷却後、ガラス繊維ろ紙にて吸引ろ過
し、黒色の粉末状沈殿物を除去し、重量平均分子量91
7のポリスチレン2.5g/1を添加し、めっき液とし
た。次に、鋼板(200×200×0.3mm)を常法によ
り前処理し、シアン化銅めっき浴にて膜厚2μの銅スト
ライクめっきを施した後、乾燥し、陰極とした。電気ア
ルミニウムめっきは、前記銅メッキ板を陰極、アルミニ
ウム板を陽極として、50℃に保った前記めっき浴に浸
漬し、大気中にて乾燥N 2 ガスをめっき浴中に5リット
ル/min の流量にてバブリングしながら1、直流電流0.
5A/dm2 で60分間めっきを行なった。なお、めっき
物は陰極揺動速度6.8m/min で揺動した。これによ
り、平均膜厚5.6μ、標準偏差0.34のばらつきの少な
い緻密で平滑な白色のアルミニウムめっきが得られた。 実施例5 実施例1の1−メチル−3−プロピルイミダゾリウムブ
ロマイドを1−ブチルイミダゾリウムブロマイドに置き
換えた以外は実施例1と同様の方法によって精製し、そ
の浴に平均分子量664のポリ−α−メチルスチレンを
2.5g/l添加し、乾燥N2 ガスをメッキ浴中に1リッ
トル当たり0.5リットル/min バブリングしながら、実
施例1と同様の前処理を行なった銅板を陰極、アルミニ
ウム板を陽極として、浴温50℃にて2A/dm2で30
分間めっきを行なった。これにより、電流効率94%、
膜厚11.1μの白色で平滑なアルミニウムめっきが得ら
れた。Example 4 AlCl3And 1-methyl-3-propylimidazolium broth
Plating bath prepared by mixing and melting a mide with a molar ratio of 2: 1
Is adjusted to 10 liters and 45 dm per liter2A
Luminium wire (99.99%) is dipped and dried N2Gas
Bubbling 0.5 liters / min per liter
, The bath temperature was heated to 80 to 90 ° C., and the mixture was purified for 12 hours.
After cooling this plating solution, suction filtration with glass fiber filter paper
The black powdery precipitate to remove the weight average molecular weight of 91
2.5g / 1 of 7 polystyrene was added to make a plating solution.
It was Next, a steel plate (200 x 200 x 0.3 mm) is prepared by a conventional method.
Pre-treated, and then a copper strike with a thickness of 2μ in a copper cyanide plating bath
After performing like plating, it was dried and used as a cathode. Electricity
Luminium plating uses the copper-plated plate as the cathode and aluminum.
Using the aluminum plate as the anode, dip it in the plating bath maintained at 50 ° C.
Pickled and dried in air N 25 liters of gas in the plating bath
While bubbling at a flow rate of 1 / min, direct current is 0.
5 A / dm2For 60 minutes. Incidentally, plating
The object rocked at a cathode rocking speed of 6.8 m / min. By this
With an average film thickness of 5.6μ and a standard deviation of 0.34
A dense and smooth white aluminum plating was obtained. Example 5 1-Methyl-3-propylimidazolium bu of Example 1
Place romide in 1-Butylimidazolium bromide
Purified by the same method as Example 1 except that the
Of poly-α-methylstyrene having an average molecular weight of 664 in the bath
Add 2.5 g / l and dry N21 liter of gas in the plating bath
While bubbling 0.5 liter / min per torr,
A copper plate that had been pretreated in the same manner as in Example 1 was used as the cathode and aluminum plate.
2A / dm at a bath temperature of 50 ° C with an aluminum plate as the anode2At 30
Plated for minutes. As a result, the current efficiency is 94%,
White and smooth aluminum plating with a film thickness of 11.1μ was obtained.
It was
【0020】比較例1 AlCl2 と1−メチル−3−プロピルイミダゾリウムブロ
マイドとを2:1のモル比に混合溶融してなる浴にアル
ミニウム線(99.99%)を浴量1リットルあたりに8
0m(1mmφ)浸漬し、浴温80〜90℃の間で8時間
放置した。このめっき液よりアルミニウム線を取り除き
実施例1と同様の方法により前処理した銅板を陰極、ア
ルミニウム板(99.99%)を陽極として50℃に保っ
ためっき浴に関し、乾燥N2 ガス雰囲気中にて直流電流
1A/dm2 で30分間めっきを行なった。めっき浴はス
ターラーで攪拌した。これより得られたアルミニウムめ
っきは、不均一な暗灰色の針状粗析出の混析した皮膜を
有するものであった 比較例2 めっきする雰囲気を大気中とする以外はすべて実施例1
と同様にしてめっきを行なった。これにより得られたア
ルミニウムめっきは、素地の露出した不均一な粒状析出
のめっき皮膜を有するものであった。 比較例3 めっき浴中に塩化水素ガスをバブリングする以外は、す
べて実施例1と同様にしてめっきを行なった。これによ
り得られたアルミニウムめっきは素地の露出した、不均
一な暗灰色の密着の悪いめっき皮膜を有するものであっ
た。 比較例4 めっき浴中に酸素ガスをバブリングする以外は、すべて
実施例1と同様にしてめっきを行なった。この方法では
アルミニウムめっきは電着しなかった。Comparative Example 1 AlCl 2 and 1-methyl-3-propylimidazolium bromide were mixed and melted at a molar ratio of 2: 1 and aluminum wire (99.99%) was added per 1 liter of the bath. 8
It was immersed in 0 m (1 mmφ) and left for 8 hours at a bath temperature of 80 to 90 ° C. With respect to a plating bath in which an aluminum wire was removed from this plating solution and a copper plate pretreated in the same manner as in Example 1 was used as a cathode and an aluminum plate (99.99%) was used as an anode at 50 ° C., a dry N 2 gas atmosphere was used. Plating was performed at a direct current of 1 A / dm 2 for 30 minutes. The plating bath was stirred with a stirrer. The aluminum plating obtained from this had a non-uniform dark gray needle-like coarse precipitation co-deposited film. Comparative Example 2 All of Example 1 except that the atmosphere for plating was atmospheric air.
Plating was performed in the same manner as in. The aluminum plating obtained in this manner had a plating film with an exposed non-uniform granular deposit. Comparative Example 3 Plating was performed in the same manner as in Example 1 except that hydrogen chloride gas was bubbled in the plating bath. The aluminum plating thus obtained had a non-uniform dark gray plating film with poor adhesion, in which the substrate was exposed. Comparative Example 4 Plating was performed in the same manner as in Example 1 except that bubbling of oxygen gas was performed in the plating bath. Aluminum plating was not electrodeposited by this method.
【図1】 混合溶融電気アルミニウムめっき液における
窒素ガスの噴射量とめっき膜厚のばらつきとの関係を示
す図である。FIG. 1 is a diagram showing a relationship between a jetting amount of nitrogen gas in a mixed molten electro-aluminum plating solution and variations in plating film thickness.
【図2】 混合溶融電気アルミニウムめっき液における
陰極揺動速度とめっき膜厚のばらつきとの関係を示す図
である。FIG. 2 is a diagram showing a relationship between a cathode oscillating speed in a mixed molten electro-aluminum plating solution and variations in plating film thickness.
Claims (6)
ハロゲン化物とを1:1〜3:1のモル比で混合溶融し
てなる電気アルミニウムめっき液に金属アルミニウムを
浸漬し、かつ不活性な乾燥無酸素ガスをバブリングする
ことを特徴とする電気アルミニウムめっき液の精製方
法。1. An electroaluminum plating solution prepared by mixing and melting (A) an aluminum halide and (B) a monoalkyl- or dialkyl-imidazolium halide in a molar ratio of 1: 1 to 3: 1. A method for purifying an aluminum electroplating solution, which comprises immersing aluminum and bubbling an inert dry oxygen-free gas.
れためっき液を使用し、不活性な乾燥無酸素ガスをめっ
き浴中にバブリングしながら浴温25〜80℃、電流密
度0.2〜10A/dm2 で、直流またはパルス電流により
めっきすることを特徴とする電気アルミニウムめっき方
法。2. The plating solution obtained by the purification method according to claim 1 is used, and a bath temperature of 25 to 80 ° C. and a current density of 0.2 while bubbling an inert dry oxygen-free gas into the plating bath. An aluminum electroplating method, characterized in that plating is performed by direct current or pulse current at 10 A / dm 2 .
れためっき液に一般式(1)の重合体を0.1〜50g/
1添加しためっき液を使用する請求項2記載のめっき方
法。 【化1】 〔式中R1 〜R3 はそれぞれ、水素または炭素数1〜5
のアルキル基、R4 及びR5 は、それぞれ水素または炭
素数1〜2のアルキル基、Aは他の共重合性ビニルモノ
マーであり、nが2以上、mが0以上の整数であり、n
+mの合計は一般式(1)の重合体の重量平均分子量が
80000になるまでの任意の数である。〕3. The plating solution obtained by the purification method according to claim 1 contains 0.1 to 50 g / polymer of the general formula (1).
The plating method according to claim 2, wherein a plating solution added with 1 is used. [Chemical 1] [Wherein R 1 to R 3 are each hydrogen or 1 to 5 carbon atoms]
Alkyl group, R 4 and R 5 are each hydrogen or an alkyl group having a carbon number of 1 to 2, A is the other copolymerizable vinyl monomer, n is 2 or more, m is an integer of 0 or greater, n
The sum of + m is an arbitrary number until the weight average molecular weight of the polymer of the general formula (1) reaches 80,000. ]
2又は3記載のめっき方法。4. The plating method according to claim 2, wherein the plating is performed in an open system in air.
として、乾燥N2 ガスを用いる請求項2又は3記載のめ
っき方法。5. The plating method according to claim 2 , wherein dry N 2 gas is used as the inert dry oxygen-free gas for bubbling.
の流量を、めっき液1リットル当たり0.3〜1.0リット
ル/min とし、陰極揺動を併用する請求項2又は3記載
のめっき方法。6. The plating method according to claim 2 or 3, wherein the flow rate of the bubbling inert dry oxygen-free gas is 0.3 to 1.0 liter / min per liter of the plating solution, and cathode oscillation is also used. ..
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30777791A JP3221897B2 (en) | 1991-11-22 | 1991-11-22 | Purification method of electroaluminum plating solution and plating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30777791A JP3221897B2 (en) | 1991-11-22 | 1991-11-22 | Purification method of electroaluminum plating solution and plating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05148680A true JPH05148680A (en) | 1993-06-15 |
| JP3221897B2 JP3221897B2 (en) | 2001-10-22 |
Family
ID=17973146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30777791A Expired - Fee Related JP3221897B2 (en) | 1991-11-22 | 1991-11-22 | Purification method of electroaluminum plating solution and plating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3221897B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007291490A (en) * | 2006-03-31 | 2007-11-08 | Hitachi Metals Ltd | Electrolytic aluminum plating solution and aluminum plating film |
| WO2012093668A1 (en) * | 2011-01-05 | 2012-07-12 | ディップソール株式会社 | Electrical aluminium or aluminium alloy fused salt plating bath having good throwing power, and electroplating method and pretreatment method using same |
| WO2014057747A1 (en) * | 2012-10-12 | 2014-04-17 | 住友電気工業株式会社 | Process for manufacturing aluminum foil and apparatus for manufacturing aluminum foil |
| JP2014077188A (en) * | 2012-10-12 | 2014-05-01 | Sumitomo Electric Ind Ltd | Method and apparatus for producing aluminum powder, and aluminum powder |
| JP2014106066A (en) * | 2012-11-27 | 2014-06-09 | Sumitomo Electric Ind Ltd | Quantitative analysis method of aluminum plating liquid and method for manufacturing aluminium plating product |
| US20150233012A1 (en) * | 2012-09-18 | 2015-08-20 | Sumitomo Electric Industries, Ltd. | Method for producing aluminum film |
| US10023968B2 (en) * | 2007-02-09 | 2018-07-17 | Dipsol Chemicals Co., Ltd. | Electric Al—Zr alloy plating bath using room temperature molten salt bath and plating method using the same |
| KR20230074944A (en) * | 2021-11-22 | 2023-05-31 | 주식회사 알링크 | Manufacturing method for aluminum plating solution and plating method using the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2623486B2 (en) | 1988-11-11 | 1997-06-25 | 日新製鋼株式会社 | Electric aluminum plating bath with excellent throwing power and plating method using the bath |
| JP3034635B2 (en) | 1991-05-21 | 2000-04-17 | ディップソール株式会社 | Electric aluminum plating bath |
-
1991
- 1991-11-22 JP JP30777791A patent/JP3221897B2/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007291490A (en) * | 2006-03-31 | 2007-11-08 | Hitachi Metals Ltd | Electrolytic aluminum plating solution and aluminum plating film |
| US10023968B2 (en) * | 2007-02-09 | 2018-07-17 | Dipsol Chemicals Co., Ltd. | Electric Al—Zr alloy plating bath using room temperature molten salt bath and plating method using the same |
| WO2012093668A1 (en) * | 2011-01-05 | 2012-07-12 | ディップソール株式会社 | Electrical aluminium or aluminium alloy fused salt plating bath having good throwing power, and electroplating method and pretreatment method using same |
| JP5914954B2 (en) * | 2011-01-05 | 2016-05-11 | ディップソール株式会社 | Electroaluminum or aluminum alloy molten salt plating bath with good throwing power, and electroplating method and pretreatment method using the same |
| US9926638B2 (en) | 2011-01-05 | 2018-03-27 | Dipsol Chemicals Co., Ltd. | Aluminum or aluminum alloy molten salt electroplating bath having good throwing power, electroplating method using the bath, and pretreatment method of the bath |
| US20150233012A1 (en) * | 2012-09-18 | 2015-08-20 | Sumitomo Electric Industries, Ltd. | Method for producing aluminum film |
| WO2014057747A1 (en) * | 2012-10-12 | 2014-04-17 | 住友電気工業株式会社 | Process for manufacturing aluminum foil and apparatus for manufacturing aluminum foil |
| JP2014077188A (en) * | 2012-10-12 | 2014-05-01 | Sumitomo Electric Ind Ltd | Method and apparatus for producing aluminum powder, and aluminum powder |
| JP2014080632A (en) * | 2012-10-12 | 2014-05-08 | Sumitomo Electric Ind Ltd | Production method of aluminum foil and production apparatus of aluminum foil |
| JP2014106066A (en) * | 2012-11-27 | 2014-06-09 | Sumitomo Electric Ind Ltd | Quantitative analysis method of aluminum plating liquid and method for manufacturing aluminium plating product |
| KR20230074944A (en) * | 2021-11-22 | 2023-05-31 | 주식회사 알링크 | Manufacturing method for aluminum plating solution and plating method using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3221897B2 (en) | 2001-10-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2662635B2 (en) | Electric aluminum plating bath and plating method using the bath | |
| US10309025B2 (en) | Aluminum or aluminum alloy molten salt electroplating bath having good throwing power, electroplating method using the bath, and pretreatment method of the bath | |
| EP2130949B1 (en) | ELECTRIC Al-Zr ALLOY PLATING BATH USING ROOM TEMPERATURE MOLTEN SALT BATH AND PLATING METHOD USING THE SAME | |
| JPS6056085A (en) | Zinc/iron alloy plating bath and process | |
| JP3221897B2 (en) | Purification method of electroaluminum plating solution and plating method | |
| JP2009197318A5 (en) | ||
| US4747916A (en) | Plating bath for electrodeposition of aluminum and process for the same | |
| JP3034635B2 (en) | Electric aluminum plating bath | |
| JPH0613758B2 (en) | Electro aluminum plating method | |
| US3833485A (en) | Electroplating chromium and chromium alloys | |
| US4778575A (en) | Electrodeposition of magnesium and magnesium/aluminum alloys | |
| US3268422A (en) | Electroplating bath containing aluminum and manganese-bearing materials and method of forming aluminummanganese alloy coatings on metallic bases | |
| US4906342A (en) | Plating bath for electrodeposition of aluminum and plating process making use of the bath | |
| US4966660A (en) | Process for electrodeposition of aluminum on metal sheet | |
| JPH01104791A (en) | Production of electrolytic aluminum foil | |
| JPH0472089A (en) | Aluminum plating bath | |
| JP2540110B2 (en) | Electro aluminum plating method | |
| JPH0196390A (en) | Production of high purity chromium by electrolysis and electrolytic bath therefor | |
| JPS5928539A (en) | Recovery of tin from tin coated scrap | |
| JPH0280589A (en) | Tungsten electroplating bath and plating method using the bath | |
| Morimitsu et al. | Electrodeposition of Al-Mg Alloys from Lewis Acidic AlCl3-EMIC-MgCl2 Room-Temperature Molten Salts | |
| JPH04362191A (en) | Ordinary temperature molten salt electrolyte and aluminum electroplating method using same | |
| JPH0250993A (en) | Method for electrolyzing copper and electrolytic bath thereof | |
| JPH06346272A (en) | Sulfuric acid bath for tinning at high current density and tinning method | |
| JPH02133596A (en) | Aluminum electroplating bath ensuring superior sticking power and plating method with same bath |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 7 Free format text: PAYMENT UNTIL: 20080817 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090817 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 9 Free format text: PAYMENT UNTIL: 20100817 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 9 Free format text: PAYMENT UNTIL: 20100817 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 10 Free format text: PAYMENT UNTIL: 20110817 |
|
| LAPS | Cancellation because of no payment of annual fees |