JPH05140735A - Heating cell - Google Patents
Heating cellInfo
- Publication number
- JPH05140735A JPH05140735A JP30065291A JP30065291A JPH05140735A JP H05140735 A JPH05140735 A JP H05140735A JP 30065291 A JP30065291 A JP 30065291A JP 30065291 A JP30065291 A JP 30065291A JP H05140735 A JPH05140735 A JP H05140735A
- Authority
- JP
- Japan
- Prior art keywords
- heater
- tungsten
- carbon
- heating cell
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Resistance Heating (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はエピタキシャル成長装置
や蒸着装置の高融点材料の蒸発装置に用いて好適な加熱
セルに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heating cell suitable for use in an evaporation apparatus for refractory materials in an epitaxial growth apparatus and an evaporation apparatus.
【０００２】[0002]
【従来の技術】近年，Ｓｉ系ヘテロバイポーラデバイス
が実現されているが，一般に高融点材料であるＳｉのエ
ピタキシャル成長にはＳｉ2Ｈ2をガスソースとしたＭＢ
ＥやＥＢ（Ｅｌｅｃｔｌｏｎ Ｂｅｅｍ）式蒸発源を用
いた固体ソースＭＢＥが用いられている。また，蒸着装
置において，Ｐｔ等の高融点金属を蒸発させる手段とし
ては蒸発源にＥＢを照射することにより加熱して蒸発さ
せている。2. Description of the Related Art In recent years, Si-based heterobipolar devices have been realized. Generally, for epitaxial growth of Si, which is a high melting point material, MB using Si 2 H 2 as a gas source is used.
A solid source MBE using an E or EB (Electron Beem) type evaporation source is used. Further, in the vapor deposition apparatus, as a means for evaporating a refractory metal such as Pt, the evaporation source is irradiated with EB to heat and evaporate.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら，ＥＢを
用いた蒸着ではＥＢ装置が大型になることに加えてフィ
ラメント電流，エミッション電流，および電源電圧を調
整しながら高融点材料のショットにＥＢを照射する必要
があり，制御性が悪いという問題があった。本発明は上
記従来技術の問題を解決するためになされたもので，蒸
発の制御性のよい加熱セルを提供することを目的とす
る。However, in the vapor deposition using the EB, the EB apparatus becomes large in size, and the shot of the high melting point material is irradiated with the EB while adjusting the filament current, the emission current, and the power supply voltage. It was necessary and there was a problem of poor controllability. The present invention has been made to solve the above-mentioned problems of the prior art, and an object of the present invention is to provide a heating cell with good evaporation controllability.
【０００４】[0004]
【課題を解決するための手段】上記課題を解決するため
に本発明の加熱セルは、容器に収納された元素を真空中
で加熱して蒸発させ，前記元素を基板の表面に付着させ
る装置において，前記容器の材質をカーボンとし，前記
容器をタングステンヒータにより加熱することを特徴と
するものである。In order to solve the above-mentioned problems, a heating cell of the present invention is an apparatus for heating an element contained in a container in a vacuum to evaporate the element and deposit the element on the surface of a substrate. The container is made of carbon, and the container is heated by a tungsten heater.
【０００５】[0005]
【作用】カーボンの融点は３５００℃以上，タングステ
ンの融点は３３８７℃なのでカーボン容器はヒータ熱に
より柔軟化したり，反応する等の影響を受けることがな
い。また，タングステンヒータは電流を調整することに
より容易に温度調整が可能である。 Since the melting point of carbon is 3500 ° C. or higher and the melting point of tungsten is 3387 ° C., the carbon container is not affected by the heat of the heater, such as softening or reaction. In addition, the temperature of the tungsten heater can be easily adjusted by adjusting the current.
【０００６】[0006]
【実施例】以下図面を用いて本発明を説明する。図１は
本発明の一実施例を示す構成図である。図において１は
カーボン製ルツボであり，例えば直径１５ｍｍ，深さ１
０ｍｍ，肉厚１ｍｍ程度に形成されている。２はタング
ステンからなるヒータ，３は高融点材料であり，図に示
すようにタングステンワイヤを容器に接触しないよう
に，かつ，ワイヤ同士が途中で接触しないように巻き回
す。その場合ワイヤの直径は容器の直径（１５ｍｍ）よ
りもわずかに大きな程度なので，ワイヤにストレスが生
じた状態となる。そしてこの状態でワイヤに大電流を流
すとワイヤにホットスポットが発生して断線などが起こ
る可能性がある。 The present invention will be described below with reference to the drawings. FIG. 1 is a block diagram showing an embodiment of the present invention. In the figure, 1 is a carbon crucible, for example, a diameter of 15 mm and a depth of 1
It is formed to have a thickness of 0 mm and a thickness of about 1 mm. 2 is a heater made of tungsten, 3 is a high melting point material, and the tungsten wire is wound so that it does not come into contact with the container and the wires do not come into contact with each other as shown in the figure. In that case, since the diameter of the wire is slightly larger than the diameter of the container (15 mm), the wire is in a stressed state. Then, if a large current is applied to the wire in this state, a hot spot may occur in the wire, and the wire may be broken.
【０００７】従って望ましくは図２に示すように，例え
ば０．２ｍｍ程度の厚さのタングステン板からストレス
を与えない状態でワイヤソー等を用いて線幅が０．２〜
０．５ｍｍ程度になるように切り出して作製する。図３
は上記カーボン製ルツボとタングステンヒータを真空中
に配置した状態を示すもので３は反射板であり，ルツボ
とヒータは可能な限り接近させて配置し，ヒータからの
輻射熱がルツボに効率よく伝わるように配置する。 Therefore, as shown in FIG. 2, it is desirable to use a wire saw or the like to reduce the line width from 0.2 to about 0.2 mm from a tungsten plate having a thickness of about 0.2 mm.
It is cut out so as to have a thickness of about 0.5 mm. Figure 3
Shows a state in which the carbon crucible and the tungsten heater are arranged in a vacuum, and 3 is a reflector, and the crucible and the heater are arranged as close as possible so that the radiant heat from the heater can be efficiently transmitted to the crucible. To place.
【０００８】図４は１８００℃，２０００℃，２５００
℃におけるタングステン（Ｗ）とカーボン（Ｃ）の蒸気
圧の関係を示すもので，例えば２０００℃においてはＷ
の蒸気圧は５×１０ー9ｍｍＴ０ｌｌ），Ｃの蒸気圧は１
０ー5ｍｍＴ０ｌｌ）となっている。 FIG. 4 shows 1800 ° C., 2000 ° C., 2500
It shows the relationship between the vapor pressure of tungsten (W) and carbon (C) at ℃, for example, W at 2000 ℃
The vapor pressure is 5 × 10 over 9 mmT0ll), the vapor pressure of C 1
0 has become over 5 mmT0ll).
【０００９】次に本発明の加熱セルに高融点材料を収納
して真空中に蒸発させることが可能なことを元素の蒸気
圧を用いて説明する。例えば高融点材料としてＰｔ，Ｓ
ｉを用いる。Ｐｔの融点は１７６９℃であり，１９００
℃程度で通常ＭＢＥ（分子線エピタキシャル成長装置）
で使用しているビーム線強度と同じ蒸気圧（〜１０ー3ｍ
ｍＴ０ｌｌ）となる。この温度ではルツボであるカーボ
ンおよびヒータのタングステンの蒸気圧は非常に低いた
め，不純物などの影響は問題とならず，純粋なＰｔを蒸
発させることが出来る。 Next, the fact that the high melting point material can be stored in the heating cell of the present invention and evaporated in a vacuum will be described using the vapor pressure of the elements. For example, Pt, S as the high melting point material
i is used. The melting point of Pt is 1769 ° C.
MBE (Molecular Beam Epitaxial Growth Equipment) at about ℃
The same vapor pressure (~ 10-3 m) as the beam intensity used in
mT0ll). At this temperature, the vapor pressures of carbon, which is a crucible, and tungsten of the heater are very low, so that the influence of impurities does not pose a problem and pure Pt can be vaporized.
【００１０】また，Ｓｉについては１５００℃で蒸気圧
（１０ー3ｍｍＴ０ｌｌ）あり，１７００℃では（１０ー2
ｍｍＴ０ｌｌ）以上の蒸気圧が得られる。上記の構成の
加熱セルによれば，ＥＢを用いた蒸発源と異なり加熱セ
ル自体の構造が簡素であり，また投入パワー（ヒータに
流す電流）を調節することにより高融点材料の制御を行
うことができる。従って操作性が容易であると共に制御
性のよい加熱セルを実現することができる。[0010] There vapor pressure (10 @ 3 mmT0ll) at 1500 ° C. for Si, at 1700 ° C. (10 -2
A vapor pressure of mmT0ll) or higher is obtained. According to the heating cell having the above configuration, unlike the evaporation source using EB, the structure of the heating cell itself is simple, and the refractory material is controlled by adjusting the input power (current flowing through the heater). You can Therefore, it is possible to realize a heating cell that is easy to operate and has good controllability.
【００１１】[0011]
【発明の効果】本発明によれば，容器の材質をカーボン
とし，前記容器をタングステンヒータにより加熱してい
るので，投入パワーを調節することにより高融点材料の
制御を行うことができる。従って操作性が容易であると
共に制御性のよい加熱セルを実現することができる。According to the present invention, since the material of the container is carbon and the container is heated by the tungsten heater, the refractory material can be controlled by adjusting the input power. Therefore, it is possible to realize a heating cell that is easy to operate and has good controllability.
【図１】本発明の加熱セルの一実施例を示す構成図であ
る。FIG. 1 is a configuration diagram showing an embodiment of a heating cell of the present invention.
【図２】ヒータの形成例を示す平面図である。FIG. 2 is a plan view showing an example of forming a heater.
【図３】カーボンルツボとタングステンヒータを真空中
に配置した状態を示す図FIG. 3 is a diagram showing a state in which a carbon crucible and a tungsten heater are arranged in a vacuum.
【図４】タングステンとカーボンの温度と蒸気圧の関係
を示すである。FIG. 4 is a graph showing the relationship between the temperature of tungsten and carbon and the vapor pressure.
１ ルツボ（カーボン） ２ ヒータ（タングステン） ３ 高融点材料 ４ 反射板 ５ 電源 ６ 真空炉 1 crucible (carbon) 2 heater (tungsten) 3 high melting point material 4 reflector 5 power supply 6 vacuum furnace
───────────────────────────────────────────────────── フロントページの続き (72)発明者 内田 暁 東京都武蔵野市中町２丁目９番32号 横河 電機株式会社内 (72)発明者 野々山 淳 東京都武蔵野市中町２丁目９番32号 横河 電機株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Akira Uchida 2-932 Nakamachi, Musashino City, Tokyo Inside Yokogawa Electric Co., Ltd. (72) Inventor Atsushi Nonoyama 2-932 Nakamachi, Musashino City, Tokyo Within Kawa Denki Co., Ltd.
Claims (1)
て蒸発させ，前記元素を基板の表面に付着させる装置に
おいて，前記容器の材質をカーボンとし，前記容器をタ
ングステンヒータにより加熱することを特徴とする加熱
セル。1. An apparatus for heating an element contained in a container to evaporate by heating in a vacuum and depositing the element on the surface of a substrate, wherein the material of the container is carbon, and the container is heated by a tungsten heater. A heating cell characterized by.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30065291A JPH05140735A (en) | 1991-11-15 | 1991-11-15 | Heating cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30065291A JPH05140735A (en) | 1991-11-15 | 1991-11-15 | Heating cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05140735A true JPH05140735A (en) | 1993-06-08 |
Family
ID=17887441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30065291A Pending JPH05140735A (en) | 1991-11-15 | 1991-11-15 | Heating cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05140735A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006207022A (en) * | 2005-01-31 | 2006-08-10 | Samsung Sdi Co Ltd | Evaporation source and vapor deposition apparatus employing the same |
-
1991
- 1991-11-15 JP JP30065291A patent/JPH05140735A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006207022A (en) * | 2005-01-31 | 2006-08-10 | Samsung Sdi Co Ltd | Evaporation source and vapor deposition apparatus employing the same |
| US7914621B2 (en) | 2005-01-31 | 2011-03-29 | Samsung Mobile Display Co., Ltd. | Vapor deposition source and vapor deposition apparatus having the same |
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