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JPH05166454A - Chip type fuse - Google Patents

Chip type fuse

Info

Publication number
JPH05166454A
JPH05166454A JP32625691A JP32625691A JPH05166454A JP H05166454 A JPH05166454 A JP H05166454A JP 32625691 A JP32625691 A JP 32625691A JP 32625691 A JP32625691 A JP 32625691A JP H05166454 A JPH05166454 A JP H05166454A
Authority
JP
Japan
Prior art keywords
type fuse
chip
substrate
chip type
fuse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP32625691A
Other languages
Japanese (ja)
Inventor
Yukihisa Hiroyama
幸久 廣山
Kikuo Yamamoto
菊男 山本
Masayoshi Ikeda
正義 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP32625691A priority Critical patent/JPH05166454A/en
Publication of JPH05166454A publication Critical patent/JPH05166454A/en
Pending legal-status Critical Current

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  • Fuses (AREA)

Abstract

PURPOSE:To provide a chip type fuse with a short fusing time at the time of an overcurrent and excellence in insulating resistance between electrodes after fusing. CONSTITUTION:Chemical copper plating is applied in a total surface to a roughed glass fabric base material fluororesin substrate 2 to form a conductor circuit 3 and an electrode 4 simultaneously by a photoetching method. Next, low melting point metal plating 7 is applied onto the conductor circuit 3 and the electrode 4 to successively print a silicone protecting film on the conductor circuit 3, and a chip type fuse 1 is obtained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、チップ型ヒューズに関
する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chip type fuse.

【0002】[0002]

【従来の技術】従来、電子機器の誤操作、短絡等の故障
により生じた過電流による電子機器の発熱、火災等の事
故を防止するために、ガラス管の端子間に金属の可溶材
料を接続した管ヒューズがあった。しかし電子機器が小
型化するにつれ、前記管ヒューズでは大き過ぎる、量産
性に劣る、配線板に表面実装しにくいなどの問題が生じ
た。これを解決するために小型化が容易で量産性に優
れ、配線板に表面実装しやすいチップ型ヒューズが提案
された。これらのチップ型ヒューズの基板は、ヒューズ
が切断される時に発生する熱を考慮してセラミック基板
上に形成するものであった。例えば、特開昭63−14
1233号公報に示されるチップ型ヒューズはセラミッ
ク基板上に可溶体を形成している。
2. Description of the Related Art Conventionally, a metal fusible material is connected between terminals of a glass tube in order to prevent an accident such as heat generation or fire of an electronic device due to an overcurrent caused by a malfunction of the electronic device or a failure such as a short circuit. There was a tube fuse that did. However, as electronic devices have become smaller, the tube fuses have problems such as being too large, being inferior in mass productivity, and being difficult to be surface-mounted on a wiring board. To solve this problem, a chip-type fuse has been proposed that is easy to miniaturize, has excellent mass productivity, and is easily surface-mounted on a wiring board. The substrate of these chip-type fuses is formed on a ceramic substrate in consideration of heat generated when the fuse is cut. For example, JP-A-63-14
The chip type fuse disclosed in Japanese Patent No. 1233 has a fusible body formed on a ceramic substrate.

【0003】[0003]

【発明が解決しようとする課題】しかし、特開昭63−
141233号公報に示されるセラミック上に可溶体を
形成した場合、過電流を通したときの発熱により溶融し
た金属がセラミック上に残留する。その結果溶断時の速
断性に劣る、溶断後電極間の絶縁性に劣る等の問題が生
じる。本発明はかかるチップ型ヒューズの欠点を改良
し、速断性と量産性に優れたチップ型ヒューズを提供す
るものである。
However, JP-A-63-
When a fusible body is formed on the ceramic disclosed in Japanese Patent No. 141233, the metal melted by the heat generated when an overcurrent is passed remains on the ceramic. As a result, problems such as inferior quick disconnection during fusion cutting and inferior insulation between electrodes after fusion cutting occur. The present invention improves the drawbacks of such a chip-type fuse and provides a chip-type fuse excellent in quick-acting property and mass productivity.

【0004】[0004]

【課題を解決するための手段】本発明者らは、上記の欠
点について種々検討した結果、ガラス布基材ふっ素樹脂
基板上に、フォト、エッチング法で形成したCu被膜と
低融点金属を利用して可溶体を構成すれば、電極部と可
溶体とが同一の工程で形成することができ、速断性及び
溶断後の絶縁性に優れたチップ型ヒューズが得られるこ
とを見出し、本発明をなすことができた。すなわち、本
発明のチップ型ヒューズは、チップ型ヒューズの基板材
料として、溶断時の発熱により基板が軟化するガラス布
基材ふっ素樹脂を用いることを特徴とする。
Means for Solving the Problems As a result of various studies on the above-mentioned drawbacks, the present inventors have used a Cu film formed by a photo and etching method and a low melting point metal on a glass cloth substrate fluororesin substrate. It was found that a fusible body can be formed in the same step by forming a fusible body in the same process, and a chip-type fuse excellent in quick-acting property and insulating property after fusing can be obtained. I was able to do it. That is, the chip-type fuse of the present invention is characterized by using, as the substrate material of the chip-type fuse, a glass cloth base fluororesin whose substrate is softened by heat generated during melting.

【0005】[0005]

【作用】本発明は、チップ型ヒューズの基板材料とし
て、溶断時の発熱により基板が軟化するガラス布基材ふ
っ素樹脂を用いることで、電極部と可溶体とが同一の工
程で形成することができ、速断性及び溶断後の絶縁性に
優れたチップ型ヒューズが得られる。
According to the present invention, the electrode portion and the fusible body can be formed in the same step by using, as the substrate material of the chip-type fuse, the glass cloth substrate fluororesin whose substrate is softened by the heat generated at the time of fusing. As a result, a chip-type fuse having excellent fast-acting properties and excellent insulation properties after fusing can be obtained.

【0006】[0006]

【実施例】以下本発明の実施例を説明する。 実施例1 両端に直径が0.8mm(φ)のスルーホールを形成した
ガラス布基材ふっ素樹脂基板(日立化成工業株式会社
製、商品名MCL−T−67、寸法80×80×厚さ
1.2mm)を脱脂液(日立化成工業株式会社製、商品名
HCR−201)で洗浄し、エッチング液(ワールドメ
タル社製、商品名MC−E)に10分間(浴温40℃)
浸漬して粗化を行い、図3の(a)に示すようなガラス
布基材ふっ素樹脂基板2を得た。次いで粗化後、無電解
銅めっきを2時間行い、図3の(b)に示すように厚さ
4μmの銅の被膜6を形成した。なお無電解銅めっき液
は、L−59めっき液(日立化成工業株式会社製、商品
名)を用いた。
EXAMPLES Examples of the present invention will be described below. Example 1 A glass cloth-based fluororesin substrate (both made by Hitachi Chemical Co., Ltd., trade name MCL-T-67, size 80 × 80 × thickness 1) having through holes with a diameter of 0.8 mm (φ) formed at both ends. 0.2 mm) is washed with a degreasing solution (Hitachi Chemical Co., Ltd., trade name HCR-201), and an etching solution (World Metal Co., trade name MC-E) is used for 10 minutes (bath temperature 40 ° C.).
Immersion and roughening were performed to obtain a glass cloth base fluororesin substrate 2 as shown in FIG. Then, after roughening, electroless copper plating was performed for 2 hours to form a copper coating 6 having a thickness of 4 μm as shown in FIG. The electroless copper plating solution used was an L-59 plating solution (trade name, manufactured by Hitachi Chemical Co., Ltd.).

【0007】銅めっき後、感光性レジストフィルム(日
立化成工業株式会社製、商品名PHT−862−AF−
25)を前記銅の被膜6の全表面に貼付し、さらにその
上面に、得られる導体回路と同形状に透明な部分を形成
したネガフィルム(図示せず)を貼付し、露光してネガ
フィルムの透明な部分の下面に配設した感光性レジスト
フィルムを硬化させた。次いでネガフィルムを取り除
き、さらに現像して硬化していない部分、詳しくは露光
していない部分の感光性レジストフィルムを除去して、
図3の(c)に示すようなレジスト膜10を形成した。
しかる後、濃度25重量%の過硫酸アンモニウムの溶液
でエッチングを行い、図3の(d)に示すように不必要
な部分の銅の被膜6を除去した。この後濃度5重量%の
NaOH溶液で硬化している感光性レジストフィルムを
剥離し、図3の(e)に示すようにガラス布基材ふっ素
樹脂配線板を得た。
After copper plating, a photosensitive resist film (manufactured by Hitachi Chemical Co., Ltd., trade name PHT-862-AF-
25) is attached to the entire surface of the copper coating 6, and a negative film (not shown) having a transparent portion formed in the same shape as the obtained conductor circuit is attached to the upper surface of the copper coating 6 and exposed to expose the negative film. The photosensitive resist film provided on the lower surface of the transparent portion of was cured. Next, remove the negative film, and further develop and remove the photosensitive resist film in the non-cured portion, specifically, in the unexposed portion,
A resist film 10 as shown in FIG. 3C was formed.
After that, etching was performed with a solution of ammonium persulfate having a concentration of 25% by weight to remove unnecessary portions of the copper coating 6 as shown in FIG. Then, the photosensitive resist film cured with a NaOH solution having a concentration of 5% by weight was peeled off to obtain a glass cloth base material fluororesin wiring board as shown in FIG. 3 (e).

【0008】次に脱脂液(日立化成工業株式会社製、商
品名HCR−201)で洗浄し、水洗後、濃度10重量
%のH2SO4溶液中に1分間浸漬し、再水洗後、従来公
知の方法で無電解半田めっきを施し、図3の(f)に示
すように、7μmの半田被膜7を形成したチップ型ヒュ
ーズ基板を得た。なお、無電解半田めっき液は、ビーム
ソルダーCP(上村工業株式会社製、商品名)を用い、
温度70℃で30分間めっきを行った。次に該セラミッ
ク配線板を水洗、乾燥後、印刷法で導体回路3の上面及
びガラス布基材ふっ素樹脂基板2の上部露出面にシリコ
ーン樹脂(東レ、ダウ・コーニング社製、商品名SE−
1700)を60μmの厚さに塗布し、オーブン中で1
30℃で15分間硬化させ、図3の(h)に示すように
シリコーン保護膜9を形成した。このようにして得られ
たチップ型ヒューズ基板をスライシングマシーン(ディ
スコ社製、商品名DAD−2H−6)を用いて両端部を
切断し、図1及び図2に示すチップ型ヒューズ1を得
た。なお図1及び図2において、5はスルーホールであ
る。得られたチップ型ヒューズの可溶体部分である導体
回路部3の導体抵抗は0.1Ωであった。
Next, it was washed with a degreasing solution (HCR-201, manufactured by Hitachi Chemical Co., Ltd.), washed with water, then immersed in a H 2 SO 4 solution having a concentration of 10% by weight for 1 minute, rewashed with water, and then washed with water. Electroless solder plating was performed by a known method to obtain a chip-type fuse substrate having a solder coating 7 of 7 μm formed as shown in FIG. As the electroless solder plating solution, beam solder CP (trade name, manufactured by Uemura Industry Co., Ltd.) is used,
Plating was performed at a temperature of 70 ° C. for 30 minutes. Next, after washing the ceramic wiring board with water and drying, a silicone resin (Toray, manufactured by Dow Corning, trade name SE-) is applied to the upper surface of the conductor circuit 3 and the upper exposed surface of the glass cloth base fluororesin substrate 2 by a printing method.
1700) to a thickness of 60 μm, and 1
It was cured at 30 ° C. for 15 minutes to form a silicone protective film 9 as shown in FIG. Both ends of the chip-type fuse substrate thus obtained were cut using a slicing machine (manufactured by Disco, trade name DAD-2H-6) to obtain the chip-type fuse 1 shown in FIGS. 1 and 2. .. 1 and 2, reference numeral 5 is a through hole. The conductor resistance of the conductor circuit portion 3, which is the fusible portion of the obtained chip-type fuse, was 0.1Ω.

【0009】比較例1 両端に直径が0.8mm(φ)のスルーホールを形成した
アルミナセラミック基板(日立化成工業株式会社製、商
品名ハロックス552、寸法80×80×厚さ1.0mm
を実施例と同様、脱脂洗浄し、乾燥後350℃に加熱し
たNaOH溶液中に10分間浸漬して粗化を行い、実施
例1と同様のアルミナセラミック基板を得た。以下実施
例と同様の工程を経てチップ型ヒューズを得た。得られ
たヒューズの導体抵抗は、実施例1と同様0.1Ωであ
った。
Comparative Example 1 Alumina ceramic substrate (both made by Hitachi Chemical Co., Ltd., trade name Harox 552, size 80 × 80 × thickness 1.0 mm) with through holes having a diameter of 0.8 mm (φ) formed at both ends.
Was degreased and washed, dried and then immersed in a NaOH solution heated to 350 ° C. for 10 minutes for roughening to obtain the same alumina ceramic substrate as in Example 1. The chip type fuse was obtained through the same steps as in the following examples. The conductor resistance of the obtained fuse was 0.1Ω as in Example 1.

【0010】比較例2 両端に直径が0.8mm(φ)のスルーホールを形成した
ジルコニア基板(日立化成工業製、試作品)を比較例1
と同様の方法で粗化し、実施例1と同様のジルコニア基
板を得た。以下実施例と同様の工程を経てチップ型ヒュ
ーズを得た。得られたヒューズの導体抵抗は、0.1Ω
であった。
Comparative Example 2 A comparative example 1 is a zirconia substrate (a prototype manufactured by Hitachi Chemical Co., Ltd.) in which through holes having a diameter of 0.8 mm (φ) are formed at both ends.
Roughening was performed by the same method as in (1) to obtain a zirconia substrate similar to that in Example 1. The chip type fuse was obtained through the same steps as in the following examples. The conductor resistance of the obtained fuse is 0.1Ω.
Met.

【0011】次に実施例及び各比較例で得られたチップ
型ヒューズを20ヶ用い、2.0Aの電流を流した時の
溶断時間及び溶断後両電極間の絶縁抵抗を測定した。そ
の結果を表1に示す。
Next, 20 chip-type fuses obtained in Examples and Comparative Examples were used to measure the fusing time when a current of 2.0 A was passed and the insulation resistance between both electrodes after the fusing. The results are shown in Table 1.

【0012】[0012]

【表1】 [Table 1]

【0013】表1から明らかなように本発明の実施例に
なるチップ型ヒューズは比較例のチップ型ヒューズに比
較して、速断性に優れ、かつ溶断後の絶縁抵抗が優れて
(高い)いることが判る。
As is clear from Table 1, the chip type fuses according to the examples of the present invention are superior to the chip type fuses of the comparative examples in quick disconnection property and excellent (high) insulation resistance after fusing. I understand.

【0014】[0014]

【発明の効果】本発明によれば、電子機器の誤操作、短
絡等の故障により生じた過電流による電子機器の発熱、
火災等の事故を防止するためのチップ型ヒューズにおい
て、量産性を維持したまま、速断性、溶断後の絶縁性を
向上させた電子機器保護用として好適なチップ型ヒュー
ズを提供することができる。
According to the present invention, heat generation of an electronic device due to overcurrent caused by malfunction of the electronic device, failure such as short circuit,
It is possible to provide a chip-type fuse for preventing accidents such as a fire, which is suitable for protecting electronic devices and which has improved fast-acting properties and insulation properties after fusing while maintaining mass productivity.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例になるチップ型ヒューズの傾斜
図である。
FIG. 1 is a perspective view of a chip fuse according to an embodiment of the present invention.

【図2】図1のA−A′線断面図である。FIG. 2 is a sectional view taken along the line AA ′ of FIG.

【図3】本発明の実施例になるチップ型ヒューズの製造
作業状態を示す断面図である。
FIG. 3 is a cross-sectional view showing a manufacturing operation state of the chip fuse according to the embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 チップ型ヒューズ 2 ガラス布基材
ふっ素樹脂基板 3 導体回路 4 電極 5 スルーホール 6 銅の被膜 7 Pb−Snの被膜 8 シリコーン保
護膜
1 Chip Fuse 2 Glass Cloth Base Fluorine Resin Substrate 3 Conductor Circuit 4 Electrode 5 Through Hole 6 Copper Film 7 Pb-Sn Film 8 Silicone Protective Film

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 表面実装用のチップ型ヒューズの製造方
法において、チップ型ヒューズの基板材料として、溶断
時の発熱により基板が軟化するガラス布基材ふっ素樹脂
を用いることを特徴とするチップ型ヒューズ。
1. A method of manufacturing a chip-type fuse for surface mounting, wherein a glass cloth-based fluororesin whose substrate is softened by heat generated during melting is used as a substrate material of the chip-type fuse. ..
JP32625691A 1991-12-11 1991-12-11 Chip type fuse Pending JPH05166454A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32625691A JPH05166454A (en) 1991-12-11 1991-12-11 Chip type fuse

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32625691A JPH05166454A (en) 1991-12-11 1991-12-11 Chip type fuse

Publications (1)

Publication Number Publication Date
JPH05166454A true JPH05166454A (en) 1993-07-02

Family

ID=18185742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32625691A Pending JPH05166454A (en) 1991-12-11 1991-12-11 Chip type fuse

Country Status (1)

Country Link
JP (1) JPH05166454A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4434913A1 (en) * 1993-10-01 1995-04-13 Soc Corp Microchip fuse and method for its manufacture
WO1996041359A1 (en) * 1995-06-07 1996-12-19 Littelfuse, Inc. Improved method and apparatus for a surface-mounted fuse device
US5790008A (en) * 1994-05-27 1998-08-04 Littlefuse, Inc. Surface-mounted fuse device with conductive terminal pad layers and groove on side surfaces
US5844477A (en) * 1994-05-27 1998-12-01 Littelfuse, Inc. Method of protecting a surface-mount fuse device
US5929741A (en) * 1994-11-30 1999-07-27 Hitachi Chemical Company, Ltd. Current protector
US5974661A (en) * 1994-05-27 1999-11-02 Littelfuse, Inc. Method of manufacturing a surface-mountable device for protection against electrostatic damage to electronic components
JP2001525600A (en) * 1997-12-02 2001-12-11 リッテルフューズ インコーポレイテッド Printed circuit board assembly with integrated fusible link
US6710699B2 (en) * 2001-07-02 2004-03-23 Abb Research Ltd Fusible link
KR100443775B1 (en) * 2001-01-19 2004-08-09 알프스 덴키 가부시키가이샤 Pressure breaking sensor for battery
US6878004B2 (en) 2002-03-04 2005-04-12 Littelfuse, Inc. Multi-element fuse array
US7183891B2 (en) 2002-04-08 2007-02-27 Littelfuse, Inc. Direct application voltage variable material, devices employing same and methods of manufacturing such devices
US7202770B2 (en) 2002-04-08 2007-04-10 Littelfuse, Inc. Voltage variable material for direct application and devices employing same
JP2007287504A (en) * 2006-04-18 2007-11-01 Matsushita Electric Ind Co Ltd Surface mount type current fuse
US8368502B2 (en) 2006-03-16 2013-02-05 Panasonic Corporation Surface-mount current fuse
JP2017188310A (en) * 2016-04-06 2017-10-12 エヌイーシー ショット コンポーネンツ株式会社 Protective element
WO2022209695A1 (en) * 2021-03-30 2022-10-06 株式会社オートネットワーク技術研究所 Fuse element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0214751B2 (en) * 1985-03-29 1990-04-09 Tokyo Shibaura Electric Co

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0214751B2 (en) * 1985-03-29 1990-04-09 Tokyo Shibaura Electric Co

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4434913C2 (en) * 1993-10-01 2002-08-14 Soc Corp Microchip fuse and method for its manufacture
US5606301A (en) * 1993-10-01 1997-02-25 Soc Corporation Micro-chip fuse and method of manufacturing the same
DE4434913A1 (en) * 1993-10-01 1995-04-13 Soc Corp Microchip fuse and method for its manufacture
US6023028A (en) * 1994-05-27 2000-02-08 Littelfuse, Inc. Surface-mountable device having a voltage variable polgmeric material for protection against electrostatic damage to electronic components
US5790008A (en) * 1994-05-27 1998-08-04 Littlefuse, Inc. Surface-mounted fuse device with conductive terminal pad layers and groove on side surfaces
US5844477A (en) * 1994-05-27 1998-12-01 Littelfuse, Inc. Method of protecting a surface-mount fuse device
US5943764A (en) * 1994-05-27 1999-08-31 Littelfuse, Inc. Method of manufacturing a surface-mounted fuse device
US5974661A (en) * 1994-05-27 1999-11-02 Littelfuse, Inc. Method of manufacturing a surface-mountable device for protection against electrostatic damage to electronic components
US5929741A (en) * 1994-11-30 1999-07-27 Hitachi Chemical Company, Ltd. Current protector
WO1996041359A1 (en) * 1995-06-07 1996-12-19 Littelfuse, Inc. Improved method and apparatus for a surface-mounted fuse device
JP2001525600A (en) * 1997-12-02 2001-12-11 リッテルフューズ インコーポレイテッド Printed circuit board assembly with integrated fusible link
KR100443775B1 (en) * 2001-01-19 2004-08-09 알프스 덴키 가부시키가이샤 Pressure breaking sensor for battery
US6710699B2 (en) * 2001-07-02 2004-03-23 Abb Research Ltd Fusible link
US6878004B2 (en) 2002-03-04 2005-04-12 Littelfuse, Inc. Multi-element fuse array
US7202770B2 (en) 2002-04-08 2007-04-10 Littelfuse, Inc. Voltage variable material for direct application and devices employing same
US7183891B2 (en) 2002-04-08 2007-02-27 Littelfuse, Inc. Direct application voltage variable material, devices employing same and methods of manufacturing such devices
US7609141B2 (en) 2002-04-08 2009-10-27 Littelfuse, Inc. Flexible circuit having overvoltage protection
US8368502B2 (en) 2006-03-16 2013-02-05 Panasonic Corporation Surface-mount current fuse
JP2007287504A (en) * 2006-04-18 2007-11-01 Matsushita Electric Ind Co Ltd Surface mount type current fuse
JP2017188310A (en) * 2016-04-06 2017-10-12 エヌイーシー ショット コンポーネンツ株式会社 Protective element
WO2022209695A1 (en) * 2021-03-30 2022-10-06 株式会社オートネットワーク技術研究所 Fuse element
JP2022154229A (en) * 2021-03-30 2022-10-13 株式会社オートネットワーク技術研究所 fuse element
US12362123B2 (en) 2021-03-30 2025-07-15 Autonetworks Technologies, Ltd. Fuse element

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