JPH05166958A - Semiconductor element housing package - Google Patents

Abstract

(57) [Abstract] [Purpose] A package for storing a semiconductor element, which has high reliability in hermetically sealing a container and can operate a semiconductor integrated circuit element accommodated therein normally and stably for a long period of time. To provide. [Structure] Metallized metal layer 8 provided on the surface of insulating substrate 1
A package for storing a semiconductor element, wherein a metal frame body 9 is brazed to the metal frame body, a metal lid body 2 is attached to the metal frame body 9, and a semiconductor element 4 is hermetically housed therein. The metallized metal layer 8 had a thickness of 25 μm or more.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement of a semiconductor element housing package for housing a semiconductor element.

[0002]

2. Description of the Related Art Conventionally, a semiconductor element housing package for housing a semiconductor element, particularly a semiconductor integrated circuit element such as an LSI, is generally made of an electrically insulating material such as alumina ceramics, and a semiconductor integrated circuit element is provided at a substantially central portion of its upper surface. An insulating substrate having a metallization wiring layer made of a refractory metal powder such as tungsten, molybdenum, and manganese, which is led out from the periphery of the recess to the outer peripheral edge, and the semiconductor integrated circuit element is electrically connected to an external electric circuit. It is composed of an external lead terminal brazed to the metallized wiring layer via a brazing material such as silver brazing for connecting to the The electrodes of the semiconductor integrated circuit element are bonded and fixed to the metallized wiring layer through bonding wires. After that, a metal lid is welded to the upper surface of the insulating base, and the semiconductor integrated circuit element is hermetically sealed inside the container made of the insulating base and the metal lid, thereby forming a semiconductor device as a final product. ..

In the conventional package for accommodating semiconductor elements, a metal frame body made of a metal material such as Kovar metal or 42 alloy is usually brazed on the upper surface of an insulating substrate, and the metal frame body is made of metal. The metal lid is attached to the upper surface of the insulating base by welding the lid by the seam weld method or the like, whereby the container made of the insulating base and the metal lid is hermetically sealed.

For brazing a metal frame to the insulating base, a metallized metal layer made of a refractory metal powder of tungsten, molybdenum, manganese, etc. is first formed on the upper surface of the insulating base in a slightly larger area than the metal frame. The film is formed by applying a thick film technique such as the screen printing method, and then a brazing material such as a silver brazing material and a metal frame are sequentially placed on the metallized metal layer, and finally the brazing material is applied to the brazing material. About 800
It is performed by applying a temperature of ° C and heating and melting the brazing material.

[0005]

However, in this conventional package for accommodating semiconductor elements, the metallized metal layer for brazing the metal frame to the insulating substrate is formed by employing the conventionally known screen printing method. When the metal lid is welded to the metal frame by the seam weld method and the semiconductor integrated circuit element is hermetically sealed, its thickness is as thin as 10 to 20 μm and it does not have much stress absorbing function. When heat is applied to the metal frame body and the metal lid body to expand, a large thermal stress acts on the metallized metal layer interposed between the insulating base and the metal frame, and the thermal stress causes the metallized metal layer to become an insulating base. It is peeled off more, the airtight sealing of the container is broken, and the semiconductor integrated circuit element accommodated inside cannot be operated normally and stably for a long period of time. The had.

[0006]

SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and its object is to keep the airtight sealing of a container always, and to operate a semiconductor integrated circuit element housed inside normally and stably for a long period of time. Another object of the present invention is to provide a package for housing a semiconductor device that can be made.

[0007]

According to the present invention, a metal frame is brazed to a metallized metal layer provided on the surface of an insulating substrate, a metal lid is attached to the metal frame, and a semiconductor element is provided inside. A package for housing a semiconductor element that is hermetically sealed, wherein the metallized metal layer has a thickness of 25 μm.
It is characterized by being set to m or more.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to the accompanying drawings. 1 and 2 show an embodiment of a package for housing a semiconductor device of the present invention, in which 1 is an insulating base and 2 is a metallic lid. The insulating base 1 and the metallic lid 2 constitute a container 3 for housing a semiconductor integrated circuit device.

The insulating substrate 1 has a concave portion 1a which forms a space for accommodating the semiconductor integrated circuit element 4 in the central portion of the upper surface thereof.
The semiconductor integrated circuit element 4 is attached to the bottom surface of the recess 1a through an adhesive such as resin, glass, or brazing material.

The insulating substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, and a silicon carbide sintered body. Alumina (Al ₂ O
₃ ), silica (SiO ₂ ), calcia (CaO), magnesia (M
(gO) and other raw material powders are mixed with an appropriate organic solvent and solvent to form a slurry, and a ceramic green sheet (ceramic green sheet) is obtained by applying the well-known doctor blade method and kander roll method. After that, appropriate punching process is applied to the ceramic green sheet and multiple sheets are laminated at high temperature (about 1600 ℃)
It is manufactured by firing at the temperature.

A metallized wiring layer 5 extending from the periphery of the recess 1a to the outside of the container 3 is adhered to the insulating substrate 1, and the semiconductor integrated circuit element 4 is formed around the recess 1a of the metallized wiring layer 5. Each electrode is electrically connected via a bonding wire 6, and an external lead terminal 7 connected to an external electric circuit is attached to a portion led out of the container 3 through a brazing material such as silver solder. To be done.

The metallized wiring layer 5 is made of tungsten.
(W), molybdenum (Mo), consisting of refractory metal powder such as manganese (Mn), a suitable organic solvent to the refractory metal powder such as tungsten, a metal paste obtained by adding and mixing a solvent conventionally known By using a thick film technique such as a screen printing method and attaching the ceramic green sheet to be the insulating substrate 1 in advance, the insulating substrate 1 is covered with the container 3 from the periphery of the recess 1a.
Is formed on the outside of the substrate.

The exposed surface of the metallized wiring layer 5 is made of nickel (Ni), gold (Au) or the like having a good conductivity and a corrosion-resistant metal by plating such as 1.0 to 20.0 μm.
The metallized wiring layer 5 can be effectively prevented from being oxidized and corroded by connecting the metallized wiring layer 5 to the bonding wire 6 and the metallized wiring layer 5 and the external lead terminals 7 are brazed to each other. The attachment becomes extremely strong. Therefore, the oxidization corrosion of the metallized wiring layer 5 is prevented, the connection between the metallized wiring layer 5 and the bonding wire 6 and the metallized wiring layer 5 and the external lead terminal are prevented.
In order to make the brazing with 7 strong, it is preferable to deposit nickel, gold or the like on the exposed surface of the metallized wiring layer 5 to a thickness of 1.0 to 20.0 μm.

The external lead terminals 7 which are brazed and attached to the metallized wiring layer 5 serve to connect the semiconductor integrated circuit element 4 housed therein to an external electric circuit, and the external lead terminals 7 are connected to the external electric circuit. The semiconductor integrated circuit element 4 housed inside is electrically connected to the external electric circuit via the metallized wiring layer 5 and the external lead terminal 7 by connecting to the.

The external lead terminal 7 is made of Kovar metal (Fe-
Ni-Co alloy), 42 alloy (Fe-Ni alloy), and other ingots (lumps) made of Kovar metal, etc., by adopting well-known metal processing methods such as rolling and punching. It is formed in a predetermined plate shape.

The insulating substrate 1 also has a metallized metal layer 8 deposited on the upper surface thereof.
A metal frame body 9 is brazed to this via a brazing material 10 such as silver brazing.

A metallized metal layer 8 on the upper surface of the insulating substrate 1
Is made of a refractory metal powder such as tungsten, molybdenum, or manganese, and has a thickness H of 25 μm or more.

The metallized metal layer 8 formed on the insulating substrate 1 has a thickness H of 25 μm or more, and thus has a great stress absorbing function. As a result, the metal frame 9 and the metal lid 2 are formed.
Are welded by the seam weld method to form a semiconductor integrated circuit device.
When airtightly sealing 4, the metal frame 9 and the metal lid 2 are heated and greatly expand, and a large thermal stress is applied to the metallized metal layer 8 interposed between the insulating substrate 1 and the metal frame 9. The thermal stress is absorbed inside the metallized metal layer 8 even if is applied, and the metallized metal layer 8 is not separated from the insulating substrate 1. Therefore, the airtight sealing of the container 3 is always maintained, and the semiconductor integrated circuit element 4 housed inside can be normally and stably operated for a long period of time.

The metallized metal layer 8 has a thickness of
When it is less than 25 μm, the stress absorbing function in the metallized metal layer 8 is deteriorated, and the insulating base 1 is caused by the thermal stress when the metal lid 2 is welded to the metal frame 9 by the seam weld method.
It will come off more. Therefore, the metallized metal layer 8
Has a thickness H of 25 μm or more.

The metallized metal layer 8 has a thickness
When the thickness exceeds 45 μm, the upper surface of the metallized metal layer 8 does not firmly bond to the insulating substrate 1, and the metallized metal layer 8 has a metal frame body.
Even if the brazing material 9 is brazed via the brazing material 10, it becomes difficult to firmly bond the metal frame body 9 to the insulating base body 1. Therefore,
The metallized metal layer 8 preferably has a thickness H 4 of 45 μm or less.

Further, the metallized metal layer 8 has a surface on which a metal having good wettability with the brazing material 10 such as nickel (Ni) or gold (Au) and having excellent corrosion resistance is applied by a plating method or the like to 1.0 to 20.0.
When the metallized metal layer 8 is deposited to a thickness of μm, the oxidative corrosion of the metallized metal layer 8 can be effectively prevented, and the brazed attachment of the metallized metal layer 8 and the metal frame 9 can be made extremely strong. it can. Therefore, the metallized metal layer
It is preferable to deposit a metal having good wettability with the brazing material and excellent corrosion resistance on the surface of 8 in a thickness of 1.0 to 20.0 μm.

The metallized metal layer 8 is formed by applying a metal paste obtained by adding and mixing a suitable organic solvent or solvent to a refractory metal powder such as tungsten in a plurality of layers by a conventionally known screen printing method to have a thickness of 25 μm. In addition to the above, it is deposited on the upper surface of the insulating substrate 1 by baking it at a high temperature.

The metal frame 9 which is brazed to the metallized metal layer 8 through the brazing material 10 acts as a base metal member when the metal lid 2 is attached to the insulating base 1, The metal lid body 2 is attached to the insulating base 1 by welding the metal lid body 2 to 9 by the seam weld method or the like. The metal frame 9 is made of a metal material such as Kovar metal or 42 alloy, and the ingot (lump) of the Kovar metal or the like is used.
Is formed into a predetermined frame shape by adopting a conventionally known metal processing method such as a rolling processing method or a punching processing method.

The metal frame body 9 is a brazing material 10 such as silver braze on the metallized metal layer 8 deposited on the upper surface of the insulating substrate 1.
A preform molded into a frame shape and a metal frame body 9 are sequentially placed, and then the preform made of the brazing material 10 is heated and melted to be brazed to the upper surface of the insulating base 1.

Thus, according to the package for accommodating semiconductor elements of the present invention, the semiconductor integrated circuit element 4 is attached to the bottom surface of the concave portion 1a of the insulating substrate 1 with an adhesive and each electrode of the semiconductor integrated circuit element 4 is metalized wiring layer. 5 electrically through the bonding wire 6 and then the insulating substrate
The metal lid body 2 is welded to the metal frame body 9 brazed to the upper surface of 1 by the seam weld method or the like, and the semiconductor integrated circuit element 4 is hermetically sealed inside the container 3 composed of the insulating base body 1 and the metal lid body 2. By encapsulating, a semiconductor device as a final product is obtained.

The present invention is not limited to the above-mentioned embodiments, but various modifications can be made without departing from the gist of the present invention.

[0027]

According to the present invention, since the metallized metal layer provided on the surface of the insulating substrate has a thickness of 25 μm or more, it is possible to enhance the stress absorption function of the metallized metal layer. As a result, when the metal lid body is welded to the metal frame body by the seam weld method to hermetically seal the semiconductor integrated circuit element, heat is applied to the metal frame body and the metal lid body to greatly expand the insulating body. Even if a large thermal stress acts on the metallized metal layer interposed between the metallized metal layer and the metal frame, the thermal stress is absorbed inside the metallized metal layer, and the metallized metal layer is not separated from the insulating substrate. Therefore, the airtight sealing of the container is always maintained, and the semiconductor integrated circuit element housed inside can be normally and stably operated for a long period of time.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an example of a semiconductor element housing package of the present invention.

FIG. 2 is an enlarged cross-sectional view of a main part of the package shown in FIG.

[Explanation of symbols]

 1 ... Insulating substrate 2 ... Metal lid 3 ... Container 5 ... Metallized wiring layer 7 ... External lead terminal 8 ... Metallized Metal layer 9 ... Metal frame 10 ... Brazing material

Claims (1)

[Claims] 1. A metal frame is brazed to a metallized metal layer provided on the surface of an insulating substrate, and a metal lid is attached to the metal frame so that a semiconductor element is hermetically housed therein. A package for storing a semiconductor element, wherein the metallized metal layer has a thickness of 25 μm or more.