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JPH05217843A - Stepper - Google Patents

Stepper

Info

Publication number
JPH05217843A
JPH05217843A JP4011490A JP1149092A JPH05217843A JP H05217843 A JPH05217843 A JP H05217843A JP 4011490 A JP4011490 A JP 4011490A JP 1149092 A JP1149092 A JP 1149092A JP H05217843 A JPH05217843 A JP H05217843A
Authority
JP
Japan
Prior art keywords
wafer
exposure
wafers
identification mark
discrimination mark
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP4011490A
Other languages
Japanese (ja)
Inventor
Makoto Fujiwara
誠 藤原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP4011490A priority Critical patent/JPH05217843A/en
Publication of JPH05217843A publication Critical patent/JPH05217843A/en
Withdrawn legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To make it possible to change the exposure conditions for each discrimination mark of each wafer at the time of exposure by providing the device with the function to read wafer discrimination marks. CONSTITUTION:A wafer discrimination mark on a wafer 9 is taken as an image into an alignment optical system 11 and then the discrimination mark can be recognized by an image processing section 12 and the discrimination mark processing section 14. Therefore, (1) job errors due to the verification of wafer marks can be reduced, (2) an experiment of classifying wafers can be done, (3) exposure can be done with an exposure area of only a part of the wafers expanded, and (4) the plural kinds of wafers is treated as the same lot and can be processed in a batch.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はフォトレジストを被覆し
た半導体基板(以下ウェハとする)と露光マスク(以下
レチクルとする)との位置合せを行って露光を施こす縮
小投影露光装置(以下ステッパーとする)に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reduction projection exposure apparatus (hereinafter referred to as a stepper) which performs exposure by aligning a semiconductor substrate (hereinafter referred to as a wafer) coated with a photoresist and an exposure mask (hereinafter referred to as a reticle). Regarding).

【0002】[0002]

【従来の技術】従来のステッパーは、ウェハとレチクル
の位置合せを行うアライメント機構は有していたが、ウ
ェハ識別マークを読み取るという機構は有していなかっ
た。
2. Description of the Related Art A conventional stepper has an alignment mechanism for aligning a wafer and a reticle, but does not have a mechanism for reading a wafer identification mark.

【0003】[0003]

【発明が解決しようとする課題】従来のステッパーはウ
ェハ識別マークを読み取る機能を有しておらず、ウェハ
露光時にウェハの識別を行う事ができなかったため、各
ウェハの識別マーク毎に露光の条件を変更するという事
が不可能であった。
The conventional stepper does not have a function of reading the wafer identification mark and cannot identify the wafer at the time of exposing the wafer. Therefore, the exposure condition is different for each identification mark of each wafer. It was impossible to change.

【0004】[0004]

【課題を解決するための手段】本発明のステッバーは、
アライメント機構の一部を利用して、ウェハ上のウェハ
識別マークを読取るための画像取込み用のカメラと、画
像処理部と、識別マーク処理部とを備えている。
The step bar of the present invention comprises:
An image capturing camera for reading the wafer identification mark on the wafer by using a part of the alignment mechanism, an image processing unit, and an identification mark processing unit are provided.

【0005】[0005]

【実施例】次に本発明について図面を参照して説明す
る。図1は、本発明の一実施例を示す縦断面図であり、
通常の露光状態を示し、図2(A)はウェハ9上のショ
ット16の配列及び、アライメントマーク15およびウ
ェハ識別マーク17,の配置を示す図であり、図2
(B)はウェハ識別マーク17の拡大図である。
The present invention will be described below with reference to the drawings. FIG. 1 is a vertical sectional view showing an embodiment of the present invention,
2A shows a normal exposure state, and FIG. 2A is a view showing the arrangement of the shots 16 on the wafer 9 and the arrangement of the alignment marks 15 and the wafer identification marks 17, FIG.
(B) is an enlarged view of the wafer identification mark 17.

【0006】図1に示す様に、露光を行う際は露光用光
源1からの光が楕円鏡2,ミラー3で反射され、照明光
学系4を通りミラー5で反射され、コンデンサレンズ6
を透過しレチクル7の像が縮小投影レンズ8によりウェ
ハステージ10上のウェハ9に転写される。アライメン
ト光学系11は照明用光源と画像を電気信号に変換する
カメラから成り、露光を行う前にはアライメントマーク
15がアライメント光学系11の視野中心にくる様ステ
ージ10を移動し、アライメント光学系11によりアラ
イメントマーク15の像を取込み、画像処理部12によ
り画像処理を行い、アライメント処理部13により、位
置座標を読取り、この情報をもとにステージ10を駆動
し、位置決めを行ってから露光が行われる。本発明にお
いては、アライメントを行う前に図2に示すウェハ識別
マーク17の像をアライメント光学系11により取り込
み、画像処理部12で画像処理を行い、識別マーク処理
部にて、識別を行う事により、露光を行う前にウェハの
識別を行う事ができる。
As shown in FIG. 1, during exposure, the light from the exposure light source 1 is reflected by the elliptical mirror 2 and the mirror 3, passes through the illumination optical system 4 and is reflected by the mirror 5, and the condenser lens 6 is used.
And the image of the reticle 7 is transferred to the wafer 9 on the wafer stage 10 by the reduction projection lens 8. The alignment optical system 11 is composed of a light source for illumination and a camera for converting an image into an electric signal. The image of the alignment mark 15 is captured by the image processing unit 12, the image processing unit 12 performs the image processing, the alignment processing unit 13 reads the position coordinates, and the stage 10 is driven based on this information to perform positioning, and then exposure is performed. Be seen. In the present invention, the image of the wafer identification mark 17 shown in FIG. 2 is taken in by the alignment optical system 11 before the alignment is performed, the image processing unit 12 performs the image processing, and the identification mark processing unit performs the identification. The wafer can be identified before the exposure.

【0007】尚、実施例ではウェハ識別マーク17にバ
ーコードを使用しているが、これは数字やアルファベッ
トを使用する事も可能である。
Although a bar code is used for the wafer identification mark 17 in the embodiment, it is also possible to use a numeral or an alphabet.

【0008】[0008]

【発明の効果】以上説明したように本発明は、アライメ
ント機構の一部を利用してウェハ上のウェハ識別マーク
を読取る機能を有するので、以下に述べる様な効果があ
る。
As described above, the present invention has a function of reading the wafer identification mark on the wafer by utilizing a part of the alignment mechanism, and therefore has the following effects.

【0009】1つ目は露光前にウェハの識別ができるた
め、ウェハの品種と工程と露光条件との照合が可能とな
りあらかじめウェハ識別マークと露光条件を登録する事
で作業ミスを無くす事が可能となる。
First, since the wafer can be identified before the exposure, it is possible to check the type of wafer, the process, and the exposure condition. By registering the wafer identification mark and the exposure condition in advance, it is possible to eliminate a work error. Becomes

【0010】2つ目は露光条件の水準を分けて実験を行
う際にあらかじめ、ウェハの識別マークと条件を設定す
る事により複数枚を連続的に自動で処理する事が可能と
なり、各ウェハ毎の人手によるウェハの識別および、条
件設定が不要となり、工数の削減が可能となる。
Secondly, when performing experiments by dividing the exposure condition level, it is possible to continuously and automatically process a plurality of wafers by setting the wafer identification mark and the condition in advance. Since it is not necessary to manually identify the wafer and set the conditions, the number of steps can be reduced.

【0011】3つ目は、同1ロット内のウェハ(通常2
5枚又は50枚)の中で一部のウェハのみTEGショッ
トを入れるために露光エリアを広げて露光を行う事が可
能となる。例えば50枚のウェハで構成されるウェハの
ロットにおいて、各ウェハに1から50の識別マークを
あらかじめ設けておき、下1桁が0のウェハのみ露光エ
リアを広げて露光を行う事が可能ある。
Thirdly, the wafers in the same lot (usually 2 wafers)
It is possible to perform exposure by expanding the exposure area in order to insert the TEG shots only in a part of the wafers (5 or 50). For example, in a wafer lot consisting of 50 wafers, it is possible to preliminarily provide identification marks 1 to 50 on each wafer and to perform exposure by expanding the exposure area only for the wafer whose last digit is 0.

【0012】4つ目は複数種の品種のウェハを同一ウェ
ハロットとして処理を行う事が可能である。半導体の製
造工程においては、工程手準が同一であっても露光の際
のレチクルを変える事により異なる製品となる。また露
光以外の工程では同一工程手準のものは同一条件で処理
を行う事ができる。従来はこのため複数種の品種のウェ
ハを同一のロットとして処理を行っても露光を行う前に
複数の小ロットに分離して露光を行っていた。本発明は
ステッパー内にてウェハの識別マークを読取る事によ
り、各ウェハに合致したレチクルをあらかじめ登録した
条件に従い自動的に選択し交換を行う事が可能であるた
め、複数種の品種から成るウェハロットを一括して処理
する事が可能である。
Fourth, it is possible to process a plurality of types of wafers in the same wafer lot. In the semiconductor manufacturing process, different products can be obtained by changing the reticle used for exposure even if the process standard is the same. Further, in the steps other than the exposure, those having the same process standard can be processed under the same conditions. For this reason, conventionally, even if the wafers of a plurality of types are processed as the same lot, the wafers are separated into a plurality of small lots before the exposure and the exposure is performed. The present invention makes it possible to automatically select and replace a reticle that matches each wafer according to pre-registered conditions by reading the wafer identification mark in the stepper. It is possible to process all at once.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を示す縦断面図である。FIG. 1 is a vertical sectional view showing an embodiment of the present invention.

【図2】ウェハ上のショット配列及びアライメントマー
クウェハ識別マークの配置を示す図である。
FIG. 2 is a diagram showing a shot arrangement on a wafer and an arrangement of alignment marks and wafer identification marks.

【符号の説明】[Explanation of symbols]

1 露光用光源 2 楕円鏡 3 ミラー 4 照明光学系 5 ミラー 6 コンデンサレンズ 7 レチクル 8 縮小投影レンズ 9 ウェハ 10 ステージ 11 アライメント光学系 12 画像処理部 13 アライメント処理部 14 識別マーク処理部 15 アライメントマーク 16 ショット 17 ウェハ識別マーク 1 Light Source for Exposure 2 Elliptical Mirror 3 Mirror 4 Illumination Optical System 5 Mirror 6 Condenser Lens 7 Reticle 8 Reduction Projection Lens 9 Wafer 10 Stage 11 Alignment Optical System 12 Image Processing Section 13 Alignment Processing Section 14 Identification Mark Processing Section 15 Alignment Mark 16 Shots 17 Wafer identification mark

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 露光マスクと半導体基板とを位置合して
露光を施す縮小投影露光装置において、アライメント機
構の一部を利用して、半導体基板上のウェハ識別マーク
を読み取る機能を有する事を特徴とする縮小投影露光装
置。
1. A reduction projection exposure apparatus for aligning an exposure mask and a semiconductor substrate to perform exposure, having a function of reading a wafer identification mark on the semiconductor substrate by utilizing a part of an alignment mechanism. Reduction projection exposure apparatus.
JP4011490A 1992-01-27 1992-01-27 Stepper Withdrawn JPH05217843A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4011490A JPH05217843A (en) 1992-01-27 1992-01-27 Stepper

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4011490A JPH05217843A (en) 1992-01-27 1992-01-27 Stepper

Publications (1)

Publication Number Publication Date
JPH05217843A true JPH05217843A (en) 1993-08-27

Family

ID=11779488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4011490A Withdrawn JPH05217843A (en) 1992-01-27 1992-01-27 Stepper

Country Status (1)

Country Link
JP (1) JPH05217843A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003083914A1 (en) * 2002-03-29 2003-10-09 Nikon Corporation Position detection mark, mark identification method, position detection method, exposure method, and position information detection method
JP2005252281A (en) * 2004-03-02 2005-09-15 Asml Netherlands Bv Lithography apparatus for obtaining imaging on surface side or rear surface side of substrate, substrate identification method, device manufacturing method, substrate, and computer program
US7808613B2 (en) 2006-08-03 2010-10-05 Asml Netherlands B.V. Individual wafer history storage for overlay corrections
US8404410B2 (en) 2010-04-22 2013-03-26 Nitto Denko Corporation Method of aligning photomask with base material and method of manufacturing printed circuit board
JPWO2018061945A1 (en) * 2016-09-30 2019-07-11 株式会社ニコン Measurement system, substrate processing system, and device manufacturing method
JP2019522820A (en) * 2016-07-19 2019-08-15 エーエスエムエル ネザーランズ ビー.ブイ. Determining the combination of patterns to be applied to a substrate in a lithography step

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003083914A1 (en) * 2002-03-29 2003-10-09 Nikon Corporation Position detection mark, mark identification method, position detection method, exposure method, and position information detection method
JP2005252281A (en) * 2004-03-02 2005-09-15 Asml Netherlands Bv Lithography apparatus for obtaining imaging on surface side or rear surface side of substrate, substrate identification method, device manufacturing method, substrate, and computer program
US7480028B2 (en) 2004-03-02 2009-01-20 Asml Netherlands B.V. Lithographic apparatus for imaging a front side or a back side of a substrate, method of substrate identification, device manufacturing method, substrate, and computer program
US7808613B2 (en) 2006-08-03 2010-10-05 Asml Netherlands B.V. Individual wafer history storage for overlay corrections
US8404410B2 (en) 2010-04-22 2013-03-26 Nitto Denko Corporation Method of aligning photomask with base material and method of manufacturing printed circuit board
JP2019522820A (en) * 2016-07-19 2019-08-15 エーエスエムエル ネザーランズ ビー.ブイ. Determining the combination of patterns to be applied to a substrate in a lithography step
US11747738B2 (en) 2016-07-19 2023-09-05 Asml Netherlands B.V. Determining the combination of patterns to be applied to a substrate in a lithography step
JPWO2018061945A1 (en) * 2016-09-30 2019-07-11 株式会社ニコン Measurement system, substrate processing system, and device manufacturing method
US11107718B2 (en) 2016-09-30 2021-08-31 Nikon Corporation Measurement system, substrate processing system, and device manufacturing method
US11430684B2 (en) 2016-09-30 2022-08-30 Nikon Corporation Measurement system, substrate processing system, and device manufacturing method
US11915961B2 (en) 2016-09-30 2024-02-27 Nikon Corporation Measurement system, substrate processing system, and device manufacturing method

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Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 19990408