JPH0521158A - Light emitting element device - Google Patents
Light emitting element deviceInfo
- Publication number
- JPH0521158A JPH0521158A JP3191273A JP19127391A JPH0521158A JP H0521158 A JPH0521158 A JP H0521158A JP 3191273 A JP3191273 A JP 3191273A JP 19127391 A JP19127391 A JP 19127391A JP H0521158 A JPH0521158 A JP H0521158A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- electrode
- metal electrode
- pixels
- emitting layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims description 13
- 239000010408 film Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、各種照明、表示用とし
て使用されるＥＬピクセルを多数配列した薄膜ＥＬ発光
素子装置に関し、特に発光効率が良好な端面発光型の発
光素子装置において、隣接ビットへの光の漏れを防止
し、且つ発光特性を低下させない構造に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film EL light emitting element device in which a large number of EL pixels used for various illuminations and displays are arranged. The present invention relates to a structure that prevents light from leaking into the light source and does not deteriorate the light emission characteristics.
【０００２】[0002]
【従来の技術】従来、薄膜ＥＬを用いた発光素子装置と
しては、図４及び図５に示すように、絶縁基板１０上に
多数のＥＬピクセル２０を一列に配列して成る発光素子
装置が提案されている。図５は図４のＸ−Ｘ線断面説明
図である。この発光素子装置は、絶縁基板１０上に帯状
金属電極１１，帯状の絶縁層１２，ＥＬピクセル毎に分
離された発光層１３，帯状の絶縁層１４，ＥＬピクセル
毎に分離された個別金属電極１５を順次積層して構成さ
れている。各ピクセル２０は、発光層１３を絶縁体層１
２と絶縁層１４とで挟み、更にこれらを帯状金属電極１
１と個別金属電極１５で挟んで構成され、前記帯状金属
電極１１は交流電源３０に、個別金属電極１５はリレー
スイッチ４０を介して前記交流電源３０に接続されてい
る。2. Description of the Related Art Conventionally, as a light emitting device using a thin film EL, as shown in FIGS. 4 and 5, a light emitting device having a large number of EL pixels 20 arranged in a line on an insulating substrate 10 has been proposed. Has been done. FIG. 5 is a cross-sectional view taken along line XX of FIG. This light emitting device includes a strip-shaped metal electrode 11, a strip-shaped insulating layer 12, a light-emitting layer 13 separated for each EL pixel, a strip-shaped insulating layer 14, and an individual metal electrode 15 separated for each EL pixel on an insulating substrate 10. Are sequentially laminated. Each pixel 20 includes a light emitting layer 13 and an insulator layer 1
2 and the insulating layer 14, and these are further sandwiched by the strip-shaped metal electrode 1
The strip-shaped metal electrode 11 is connected to an AC power supply 30, and the individual metal electrode 15 is connected to the AC power supply 30 via a relay switch 40.
【０００３】従って、リレースイッチ４０を選択するこ
とにより、特定のＥＬピクセル２０の帯状金属電極１１
と個別金属電極１５との間に高電界が印加され、発光層
１３内の電子が加速され、この電子が発光層１３内の発
光中心を衝突励起し、励起された発光中心が基底状態に
戻るときに発光が生じる。この発光による発光光は、帯
状金属電極１１又は個別金属電極１５の鏡面で反射を繰
り返し、ＥＬピクセル２０の端面側から矢印の方向（図
５では紙面上側）へ効率よく発光光を放射させるように
なっている。Therefore, by selecting the relay switch 40, the strip metal electrode 11 of the specific EL pixel 20 is selected.
A high electric field is applied between the light emitting layer 13 and the individual metal electrode 15, the electrons in the light emitting layer 13 are accelerated, the electrons collide with and excite the light emitting centers in the light emitting layer 13, and the excited light emitting centers return to the ground state. Sometimes light emission occurs. The emitted light due to this emission is repeatedly reflected on the mirror surface of the strip-shaped metal electrode 11 or the individual metal electrode 15, so that the emitted light is efficiently emitted from the end face side of the EL pixel 20 in the direction of the arrow (upper side of the paper in FIG. 5). Is becoming
【０００４】[0004]
【発明が解決しようとする課題】上記発光素子装置によ
ると、隣接するＥＬピクセル２０間での光の漏れを防止
するため、発光層１３を各ＥＬピクセル２０毎に分離し
て形成されている。しかしながら、分離された発光層１
３を得るには、リフトオフ法やフォトリソ法により発光
部材を着膜した発光層膜をパターニングしなければなら
ない。このパターニングの際に発光層１３が水に浸され
ることにより酸化等が生じ、発光層１３の発光輝度，発
光効率，信頼性が低下するという問題点があった。According to the above-described light emitting device, the light emitting layer 13 is formed separately for each EL pixel 20 in order to prevent light leakage between the adjacent EL pixels 20. However, the separated light emitting layer 1
In order to obtain 3, the light emitting layer film on which the light emitting member is deposited must be patterned by the lift-off method or the photolithography method. During the patterning, the light emitting layer 13 is soaked in water to cause oxidation and the like, which causes a problem that the light emitting luminance, the light emitting efficiency, and the reliability of the light emitting layer 13 are lowered.
【０００５】また、上記構成では、発光層１３を分離さ
せて各ＥＬピクセル２０の側面に発光層１３と絶縁層１
４との界面を生じさせ、屈折率の差により全反射させて
隣接のＥＬピクセル２０への光の漏れを防止している。
しかしながら、前記界面では一定範囲の入射角の光のみ
が全反射し、入射角によっては透過する光があり、この
光がＥＬピクセル２０の側面からの漏光となり、隣接ビ
ットへのノイズ光となるという問題点がなお存在する。
また、漏光の存在により図４の矢印方向からの発光光が
減少し、発光効率が低下するという問題点もある。In the above structure, the light emitting layer 13 is separated and the light emitting layer 13 and the insulating layer 1 are provided on the side surface of each EL pixel 20.
4 and the total reflection due to the difference in refractive index is caused to prevent the light from leaking to the adjacent EL pixel 20.
However, only light having an incident angle within a certain range is totally reflected at the interface, and there is light that is transmitted depending on the incident angle. This light becomes light leakage from the side surface of the EL pixel 20 and becomes noise light to adjacent bits. The problem still exists.
Further, there is a problem that the light emission from the direction of the arrow in FIG. 4 decreases due to the presence of light leakage, and the light emission efficiency decreases.
【０００６】本発明は上記実情に鑑みてなされたもの
で、発光特性の低下を防止するとともに発光効率の向上
を図ることができる発光素子装置を提供することを目的
とする。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a light emitting device capable of preventing the deterioration of the light emitting characteristics and improving the light emitting efficiency.
【０００７】[0007]
【課題を解決するための手段】上記従来例の問題点を解
決するため本発明の発光素子装置は、絶縁基板上に凹部
及び凸部が周期的に連続するよう凹凸面を形成し、該凹
凸面上に帯状金属電極を形成し、該帯状金属電極上に発
光層を形成し、該発光層上に前記凹部に対応するように
分離された個別金属電極を形成することを特徴としてい
る。In order to solve the above-mentioned problems of the prior art, the light emitting device of the present invention has an uneven surface formed on an insulating substrate so that the recesses and the projections are periodically continuous. It is characterized in that a strip metal electrode is formed on the surface, a light emitting layer is formed on the strip metal electrode, and individual metal electrodes separated so as to correspond to the recesses are formed on the light emitting layer.
【０００８】[0008]
【作用】本発明によれば、帯状電極と個別電極とで発光
層を挟んで成るＥＬピクセルを凹凸面の凹部に形成する
ので、発光層をパターニングすることなく各ＥＬピクセ
ルを隔離することができる。また、凹凸面に沿って帯状
金属電極が形成されるので、該帯状金属電極をＥＬピク
セル間の鏡面とすることができる。According to the present invention, since the EL pixel having the light emitting layer sandwiched between the strip electrode and the individual electrode is formed in the concave portion of the uneven surface, each EL pixel can be isolated without patterning the light emitting layer. .. Moreover, since the strip-shaped metal electrode is formed along the uneven surface, the strip-shaped metal electrode can be used as a mirror surface between the EL pixels.
【０００９】[0009]
【実施例】本発明の発光素子装置の一実施例について図
１及び図２を参照しながら説明する。図２は発光素子装
置の平面図、図１は図２のＡ−Ａ線断面説明図である。
絶縁性の透明基板１０上に、凹部２及び凸部３が周期的
に連続する凹凸面１が形成されている。凹部２は、その
開口面２ａが透明基板１０の長尺方向に沿った辺に臨む
ように形成されている。また、凹部２は、透明基板１０
をエッチングすることにより形成され、各側壁２ｂはテ
ーパ状に形成されている。各凹部２には、帯状金属電極
４，絶縁層５，発光層６，絶縁層７，個別金属電極８を
積層して成るＥＬピクセル２０が形成されている。個別
金属電極８は、各凹部２に対応するように分離して形成
され、帯状金属電極４，絶縁層５，発光層６，絶縁層７
は、各ＥＬピクセル２０で共通となるように凹凸面１上
に帯状に形成されている。また、凹部２の深さｈは、発
光層６の膜厚より大きくしている。従って、各ＥＬピク
セル２０間には、凹部２の側壁２ｂに着膜された金属電
極４が存在し、この金属電極４の存在により各ＥＬピク
セル２０を隔離している。また、帯状金属電極４には交
流電源３０が接続され、各個別金属電極８にはリレース
イッチ４０を介して前記交流電源３０が接続されてい
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the light emitting device of the present invention will be described with reference to FIGS. FIG. 2 is a plan view of the light emitting element device, and FIG. 1 is a sectional view taken along the line AA of FIG.
On an insulating transparent substrate 10, an uneven surface 1 in which concave portions 2 and convex portions 3 are periodically continuous is formed. The recess 2 is formed so that its opening surface 2 a faces the side of the transparent substrate 10 along the longitudinal direction. In addition, the recess 2 is formed by the transparent substrate 10.
Is formed by etching, and each side wall 2b is formed in a tapered shape. An EL pixel 20 formed by laminating a strip metal electrode 4, an insulating layer 5, a light emitting layer 6, an insulating layer 7, and an individual metal electrode 8 is formed in each recess 2. The individual metal electrodes 8 are separately formed so as to correspond to the respective recesses 2, and the strip-shaped metal electrode 4, the insulating layer 5, the light emitting layer 6, and the insulating layer 7 are formed.
Are formed in a strip shape on the uneven surface 1 so as to be common to each EL pixel 20. The depth h of the recess 2 is larger than the film thickness of the light emitting layer 6. Therefore, the metal electrode 4 deposited on the side wall 2b of the recess 2 exists between the EL pixels 20, and the EL electrodes 20 are isolated by the existence of the metal electrode 4. An AC power supply 30 is connected to the strip-shaped metal electrode 4, and the AC power supply 30 is connected to each individual metal electrode 8 via a relay switch 40.
【００１０】従って、リレースイッチ４０を選択するこ
とにより、特定のＥＬピクセル２０の帯状金属電極４と
個別金属電極８との間に高電界が印加され、両電極で挟
まれた発光層６内の電子が加速され、この電子が発光層
６内の発光中心を衝突励起し、励起された発光中心が基
底状態に戻るときに発光が生じる。この発光による発光
光は、帯状金属電極４又は個別金属電極８の鏡面で反射
を繰り返し、ＥＬピクセル２０の端面側から図２の矢印
の方向（図１中では紙面に垂直方法）へ発光光を放射さ
せる。また、隣接するＥＬピクセル２０側へ発光する光
（従来例において隣接ビットへの漏光となるもの）は、
凹部２の深さｈを発光層６の膜厚より大きくすることに
より、帯状電極４により側壁２ｂ面上に形成される鏡面
で全反射し、隣接するＥＬピクセル２０への光の漏れを
防止している。また、この光は更に帯状金属電極４や個
別金属電極８で反射を繰り返し、最終的にはＥＬピクセ
ル２０の端面側（凹部２の開口面２ａ側）から放射され
るので発光効率の向上を図ることができる。Therefore, by selecting the relay switch 40, a high electric field is applied between the strip-shaped metal electrode 4 and the individual metal electrode 8 of the specific EL pixel 20, and the light-emitting layer 6 sandwiched between the two electrodes is applied. The electrons are accelerated, and the electrons collide with each other to excite the emission center in the light emitting layer 6, and when the excited emission center returns to the ground state, light emission occurs. The emitted light by this emission is repeatedly reflected on the mirror surface of the strip-shaped metal electrode 4 or the individual metal electrode 8 and emitted from the end face side of the EL pixel 20 in the direction of the arrow in FIG. 2 (the method perpendicular to the paper surface in FIG. 1). Let it radiate. Further, the light emitted to the adjacent EL pixel 20 side (the light that leaks to the adjacent bit in the conventional example) is
By making the depth h of the recess 2 larger than the film thickness of the light emitting layer 6, total reflection is performed on the mirror surface formed on the surface of the side wall 2b by the strip electrode 4 to prevent light leakage to the adjacent EL pixel 20. ing. Further, this light is further repeatedly reflected by the strip-shaped metal electrode 4 and the individual metal electrode 8 and finally emitted from the end face side of the EL pixel 20 (the opening face 2a side of the concave portion 2), so that the luminous efficiency is improved. be able to.
【００１１】次に、前記発光素子装置の製造方法につい
て簡単に説明する。ガラス等から成るの透明基板１０上
の全面にレジストを塗布し、露光，現像してパタ−ニン
グを行ない前記凹部２に相当する部分のレジストが除去
されたレジストパタ−ンを形成する。次いで、フッ酸等
のエッチング液を用いて、レジスト除去部分の下方の透
明基板１０をウエットエッチングして深さ５０００オン
グストローム〜８０００オングストロームでテーパ状の
側壁２ｂを有する複数の凹部２を形成して透明基板１０
上に凹凸面１を形成し、前記レジストパタ−ンを除去す
る。スパッタ法あるいは物理蒸着法により、前記凹凸面
１を覆うようにクロム等の金属膜を１０００オングスト
ローム程度の膜厚で着膜して帯状金属電極４を形成す
る。この際、凹部２の側壁２ｂはテーパ状に形成されて
いるので、帯状金属電極４を分断することなく着膜する
ことができる。次に、帯状金属電極４上にスパッタ法，
プラズマＣＶＤ法等によりＳｉＮｘ膜を２０００オング
ストローム程度の膜厚で着膜して絶縁層５を形成する。
続いて、絶縁層５上に電子ビーム蒸着法，ＣＶＤ法，ス
パッタ法等によりＺｎＳ：Ｍｎ等の発光部材を５０００
オングストローム程度の膜厚で着膜して発光層６を形成
する。発光層６上にＳｉＮｘ膜を２０００オングストロ
ーム程度の膜厚で着膜して絶縁層７を形成する。次に、
絶縁層７上にスパッタ法あるいは物理蒸着法により、ア
ルミニウム等の金属膜を１μｍ程度の膜厚で着膜し、フ
ォトリソ及びエッチングによりパターニングし、各ＥＬ
ピクセル２０に対応するよう分離された個別金属電極８
を凹部２の上方位置に形成する。上記製造方法によれ
ば、発光部材をエッチングする必要がないので、発光部
材が水分に触れることを防ぎ、酸化等による発光特性の
劣化を防止することができる。Next, a method for manufacturing the light emitting device will be briefly described. A resist is applied to the entire surface of the transparent substrate 10 made of glass or the like, and is exposed and developed to perform patterning to form a resist pattern in which the resist in the portion corresponding to the recess 2 is removed. Next, the transparent substrate 10 below the resist removed portion is wet-etched using an etching solution such as hydrofluoric acid to form a plurality of recesses 2 having tapered sidewalls 2b with a depth of 5000 angstroms to 8000 angstroms. Board 10
An uneven surface 1 is formed on the upper surface, and the resist pattern is removed. A metal film of chromium or the like is deposited to a thickness of about 1000 angstrom so as to cover the uneven surface 1 by a sputtering method or a physical vapor deposition method to form the strip-shaped metal electrode 4. At this time, since the side wall 2b of the recess 2 is formed in a tapered shape, it is possible to deposit the strip-shaped metal electrode 4 without dividing it. Next, on the strip-shaped metal electrode 4, a sputtering method,
An insulating layer 5 is formed by depositing a SiNx film with a film thickness of about 2000 angstrom by the plasma CVD method or the like.
Subsequently, a light emitting member such as ZnS: Mn is formed on the insulating layer 5 by an electron beam vapor deposition method, a CVD method, a sputtering method, or the like for 5000 times.
The light emitting layer 6 is formed by depositing a film having a film thickness of about angstrom. An insulating layer 7 is formed by depositing a SiNx film on the light emitting layer 6 with a film thickness of about 2000 angstrom. next,
A metal film of aluminum or the like having a thickness of about 1 μm is deposited on the insulating layer 7 by a sputtering method or a physical vapor deposition method, and patterned by photolithography and etching.
Separate metal electrodes 8 corresponding to the pixels 20
Is formed above the recess 2. According to the above manufacturing method, since it is not necessary to etch the light emitting member, it is possible to prevent the light emitting member from coming into contact with moisture and prevent the deterioration of the light emitting characteristics due to oxidation or the like.
【００１２】発光部材としては、前記ＺｎＳ：Ｍｎの他
に、ＺｎＳ：Ｔｂ，Ｆ ＳｒＳ：Ｃｅ ＣａＳ：Ｅｕ
等を使用してもよい。また、絶縁材料としては、前記Ｓ
ｉＮｘの他に、ＳｉＯ2，Ａｌ2Ｏ3，Ｙ2Ｏ3，Ｔａ2Ｏ5
等を使用してもよい。また、上記製造方法では、凹凸面
１をウエットエッチングにより形成したが、反応性イオ
ンエッチング等のドライエッチング法により形成しても
よい。この際、選択比を調整することにより凹部２の側
壁２ｂをテーパ状に形成することができる。As the light emitting member, in addition to ZnS: Mn, ZnS: Tb, FSrS: CeCaS: Eu.
Etc. may be used. The insulating material is S
In addition to the iNx, SiO 2, Al 2 O 3, Y 2 O 3, Ta 2 O 5
Etc. may be used. Further, in the above manufacturing method, the uneven surface 1 is formed by wet etching, but it may be formed by a dry etching method such as reactive ion etching. At this time, the sidewall 2b of the recess 2 can be formed in a tapered shape by adjusting the selection ratio.
【００１３】上記製造方法では、透明基板１０の表面を
エッチングして凹凸面１を形成したが、図３に示すよう
に、透明基板１０の上面に樹脂膜９を形成し、フォトリ
ソ法により樹脂膜９に凹部９ａを有する凹凸面を作成
し、凹部９ａにＥＬピクセル２０を形成するようにして
もよい。また、樹脂膜９として感光性材料を使用すれ
ば、露光及び現像で凹部９ａが形成できエッチングが不
要となるので工程の簡略化を図ることができる。また、
樹脂膜９としては、ＳｉＮｘ，Ａｌ2０3，Ｔａ2Ｏ5等の
薄膜を用いてもよい。他の構成は図１と同様であるの
で、同一構成部分に同一符号を付して詳細な説明を省略
する。In the above manufacturing method, the surface of the transparent substrate 10 is etched to form the uneven surface 1. However, as shown in FIG. 3, the resin film 9 is formed on the upper surface of the transparent substrate 10 and the resin film is formed by the photolithography method. An uneven surface having a concave portion 9a may be formed in 9 and the EL pixel 20 may be formed in the concave portion 9a. Further, if a photosensitive material is used as the resin film 9, the recess 9a can be formed by exposure and development, and etching is unnecessary, so that the process can be simplified. Also,
As the resin film 9, a thin film of SiNx, Al 2 O 3 , Ta 2 O 5 or the like may be used. Since other configurations are the same as those in FIG. 1, the same components are designated by the same reference numerals and detailed description thereof will be omitted.
【００１４】[0014]
【発明の効果】上述したように本発明の発光素子装置に
よれば、各ＥＬピクセルが透明基板上の凹凸によって隔
離され、各ＥＬピクセル間に帯状金属電極を鏡面として
配置できるので、発光層からの発光が隣接ビットへ漏れ
ることを防ぎ、隣接ビットでのノイズの発生を防止する
ことができる。また、各ＥＬピクセル間の前記帯状金属
電極で反射する光は、最終的には各ＥＬピクセルの端面
から放射されるので、発光効率の向上を図ることだでき
る。更に、発光層となる発光部材のエッチング等の加工
が不要となるので、発光特性の劣化を防止し、且つ製造
工程の簡略化を図ることができる。As described above, according to the light emitting device of the present invention, each EL pixel is isolated by the unevenness on the transparent substrate, and the strip-shaped metal electrode can be arranged as a mirror surface between each EL pixel. It is possible to prevent the emission of light from leaking to the adjacent bit and prevent the generation of noise in the adjacent bit. Further, since the light reflected by the strip-shaped metal electrode between the EL pixels is finally emitted from the end face of each EL pixel, it is possible to improve the luminous efficiency. Further, since processing such as etching of the light emitting member to be the light emitting layer is unnecessary, deterioration of light emitting characteristics can be prevented and the manufacturing process can be simplified.
【図１】 本発明の一実施例を示す発光素子装置の一部
断面説明図である。FIG. 1 is a partial cross-sectional explanatory view of a light emitting device according to an embodiment of the present invention.
【図２】 本発明の一実施例を示す発光素子装置の平面
説明図である。FIG. 2 is an explanatory plan view of a light emitting device according to an embodiment of the present invention.
【図３】 本発明の他の実施例を示す発光素子装置の一
部断面説明図である。FIG. 3 is a partial cross-sectional explanatory view of a light emitting device according to another embodiment of the present invention.
【図４】 従来の発光素子装置の斜視説明図である。FIG. 4 is a perspective explanatory view of a conventional light emitting device.
【図５】 図４のＸ−Ｘ線断面説明図である。5 is a cross-sectional view taken along line XX of FIG.
１…凹凸面、 ２…凹部、 ２ａ…開口面、 ２ｂ…側
壁、 ３…凸部、 ４…帯状金属電極、 ５…絶縁層、
６…発光層、 ７…絶縁層、 ８…個別金属電極、
１０…透明基板、 ２０…ＥＬピクセルDESCRIPTION OF SYMBOLS 1 ... Uneven surface, 2 ... Recessed part, 2a ... Opening surface, 2b ... Side wall, 3 ... Convex part, 4 ... Band-shaped metal electrode, 5 ... Insulating layer,
6 ... Emitting layer, 7 ... Insulating layer, 8 ... Individual metal electrode,
10 ... Transparent substrate, 20 ... EL pixel
Claims (1)
続するよう配置された凹凸面と、該凹凸面上に形成され
た帯状金属電極と、該帯状金属電極上に形成された発光
層と、該発光層上に形成され前記凹部に対応するように
分離された個別金属電極と、を具備することを特徴とす
る発光素子装置。Claim: What is claimed is: 1. A concave-convex surface in which concave portions and convex portions are periodically arranged on an insulating substrate, a strip-shaped metal electrode formed on the concave-convex surface, and the strip-shaped metal electrode. A light emitting device comprising: a light emitting layer formed on the light emitting layer; and an individual metal electrode formed on the light emitting layer and separated so as to correspond to the recess.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3191273A JPH0521158A (en) | 1991-07-05 | 1991-07-05 | Light emitting element device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3191273A JPH0521158A (en) | 1991-07-05 | 1991-07-05 | Light emitting element device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0521158A true JPH0521158A (en) | 1993-01-29 |
Family
ID=16271808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3191273A Pending JPH0521158A (en) | 1991-07-05 | 1991-07-05 | Light emitting element device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0521158A (en) |
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|---|---|---|---|---|
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| WO1999053725A1 (en) * | 1998-04-15 | 1999-10-21 | Tdk Corporation | Organic el display and method of manufacturing the same |
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-
1991
- 1991-07-05 JP JP3191273A patent/JPH0521158A/en active Pending
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|---|---|---|---|---|
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| JPH10247588A (en) * | 1997-03-04 | 1998-09-14 | Idemitsu Kosan Co Ltd | Organic EL light emitting device |
| WO1999053725A1 (en) * | 1998-04-15 | 1999-10-21 | Tdk Corporation | Organic el display and method of manufacturing the same |
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