JPH05251206A - Ptc element - Google Patents
Ptc elementInfo
- Publication number
- JPH05251206A JPH05251206A JP4967192A JP4967192A JPH05251206A JP H05251206 A JPH05251206 A JP H05251206A JP 4967192 A JP4967192 A JP 4967192A JP 4967192 A JP4967192 A JP 4967192A JP H05251206 A JPH05251206 A JP H05251206A
- Authority
- JP
- Japan
- Prior art keywords
- current
- temperature coefficient
- positive temperature
- ptc
- zirconium oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910001928 zirconium oxide Inorganic materials 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000002131 composite material Substances 0.000 claims description 7
- 102100028680 Protein patched homolog 1 Human genes 0.000 abstract description 16
- 101710161390 Protein patched homolog 1 Proteins 0.000 abstract description 16
- 239000000843 powder Substances 0.000 abstract description 10
- 238000010304 firing Methods 0.000 abstract description 9
- 239000002994 raw material Substances 0.000 abstract description 9
- 235000012489 doughnuts Nutrition 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 6
- 239000000853 adhesive Substances 0.000 abstract description 5
- 230000001070 adhesive effect Effects 0.000 abstract description 5
- 239000000919 ceramic Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 5
- 238000000465 moulding Methods 0.000 abstract description 5
- 230000006641 stabilisation Effects 0.000 abstract description 5
- 238000011105 stabilization Methods 0.000 abstract description 5
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 9
- 229910002113 barium titanate Inorganic materials 0.000 description 9
- 230000000087 stabilizing effect Effects 0.000 description 8
- 230000001603 reducing effect Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 101001134861 Homo sapiens Pericentriolar material 1 protein Proteins 0.000 description 5
- 102100033422 Pericentriolar material 1 protein Human genes 0.000 description 5
- 229910052573 porcelain Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 101000974343 Homo sapiens Nuclear receptor coactivator 4 Proteins 0.000 description 1
- 102100022927 Nuclear receptor coactivator 4 Human genes 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】
【構成】 それぞれ直径および特性の異なる円盤状ない
しドーナツ盤状に原料粉を成型した３種類のＰＴＣ１〜
３を同心状に配置し、かつ、互いに側面が接触しないよ
うに酸化ジルコニウムをドーナツ盤状に成型した成型品
６・７を介在させて多重した基体１０を、１３５０℃で
２時間焼成する。
【効果】 電圧変動に対する電流安定化領域の幅、およ
び電流の変動率を最適に設定した電流安定化素子や印加
電圧に対して電流を減衰させる電流低減効果が増大した
電流低減素子等に応用可能なＰＴＣ素子を得ることがで
きる。セラミックスボンド等の接着剤、あるいはビス等
の治具を用いずに、複数個の正特性サーミスタを複合さ
せて１素子同様の工程によって電極を形成して一つの素
子にすることができる。複数個の正特性サーミスタを別
々に焼成する手間が省ける。
(57) [Summary] [Structure] Three types of PTC1 made by molding raw material powder into discs or donuts with different diameters and characteristics.
Substrates 10 in which 3 are arranged concentrically and in which zirconium oxide is molded in a donut disc shape so as to prevent the side surfaces from contacting each other and the multiple bodies are interposed, are baked at 1350 ° C. for 2 hours. [Effect] Applicable to the current stabilization element with the width of the current stabilization region and the fluctuation rate of the current to the voltage fluctuation optimized, and the current reduction element with the increased current reduction effect that attenuates the current with respect to the applied voltage. It is possible to obtain a different PTC element. Without using an adhesive such as a ceramics bond or a jig such as a screw, a plurality of positive temperature coefficient thermistors can be compounded to form an electrode in the same process as one device to form one device. It is possible to save the trouble of separately firing a plurality of positive temperature coefficient thermistors.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、例えば、電流安定化素
子や電流低減素子等に応用可能なＰＴＣ素子に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a PTC element applicable to, for example, a current stabilizing element and a current reducing element.
【０００２】[0002]
【従来の技術】純度の高いチタン酸バリウムの原料に、
例えばランタンのようなランタノイド等を添加して焼成
すると、温度上昇と共に抵抗値も増大する特性、いわゆ
るＰＴＣ（positive temperature coefficient）特性を
有するチタン酸バリウム半導体磁器が得られることは、
従来から広く知られている。また、チタン酸バリウム半
導体磁器が強誘電体から常誘電体へ相転移を起こすキュ
リー点近傍で、顕著なＰＴＣ特性が出現することもよく
知られている。2. Description of the Related Art As a raw material for high-purity barium titanate,
For example, when a lanthanoid such as lanthanum is added and fired, a barium titanate semiconductor porcelain having a characteristic that a resistance value increases with temperature rise, that is, a so-called PTC (positive temperature coefficient) characteristic is obtained.
It has been widely known from the past. It is also well known that a remarkable PTC characteristic appears in the vicinity of the Curie point at which a barium titanate semiconductor porcelain causes a phase transition from a ferroelectric substance to a paraelectric substance.
【０００３】このようなチタン酸バリウム半導体磁器等
のＰＴＣ特性を利用した装置として、例えばカラーＴＶ
用自動消磁装置に用いられる正特性サーミスタ装置が提
案されている（特開昭６１−２３３０１号公報）。この
正特性サーミスタ装置では、消磁効果を増大させるため
に、２個のチタン酸バリウム半導体磁器等の正特性サー
ミスタを使用している。また、正特性サーミスタと通常
の抵抗とを並列接続することにより定電流回路を構成で
きることを紹介している文献（増補版チタバリ系半導
体：エレセラ出版委員会編……1980 7.10 増補初版) も
ある。As a device utilizing the PTC characteristics of such barium titanate semiconductor porcelain, for example, a color TV
A positive temperature coefficient thermistor device used for an automatic degaussing device has been proposed (Japanese Patent Laid-Open No. 61-23301). In this positive temperature coefficient thermistor device, two positive temperature coefficient thermistors such as barium titanate semiconductor porcelain are used to increase the demagnetization effect. In addition, there is also a document (enlarged version of Chitavari-based semiconductor: Erasera Publishing Committee ed., 1980 7.10 expanded first edition) that introduces that a constant current circuit can be constructed by connecting a positive temperature coefficient thermistor and a normal resistor in parallel.
【０００４】また、一般に正特性サーミスタでは、正特
性サーミスタの温度に対する抵抗率は、低温からキュリ
ー点近傍までの温度範囲で減少したのち、キュリー点近
傍から高温の温度範囲で急激に増大する。このため、正
特性サーミスタを流れる電流は、印加電圧に対して所定
の値まで単調増加したのち、所定の値以上では単調減少
するように推移する。尚、電流のピーク値に対応する電
圧の所定値は、キュリー点が高い正特性サーミスタほど
大きくなる。Generally, in a PTC thermistor, the resistivity of the PTC thermistor with respect to temperature decreases in the temperature range from a low temperature to near the Curie point and then rapidly increases in the temperature range from near the Curie point to a high temperature. Therefore, the current flowing through the positive temperature coefficient thermistor monotonically increases to a predetermined value with respect to the applied voltage and then monotonically decreases above the predetermined value. It should be noted that the predetermined value of the voltage corresponding to the peak value of the current becomes larger in the positive characteristic thermistor having a higher Curie point.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上記特
開昭６１−２３３０１号公報に開示された正特性サーミ
スタ装置は、内部に組み込まれる２個の正特性サーミス
タのそれぞれの両面（合計４面）に陽極・陰極の電極加
工を施す必要がある。即ち、一般に正特性サーミスタを
複数個使用した正特性サーミスタ装置等を作製する場合
には、電極加工の工程数は「サーミスタ数×２」工程だ
け必要となり、製造工程が非常に煩雑になり、部品点数
も多くなるためコスト高を招来するという問題点を有し
ている。However, the positive temperature coefficient thermistor device disclosed in Japanese Patent Laid-Open No. 61-23301 described above has two positive temperature coefficient thermistors installed on both sides (a total of four sides). It is necessary to process the anode and cathode electrodes. That is, generally, when manufacturing a positive temperature coefficient thermistor device or the like using a plurality of positive temperature coefficient thermistors, the number of electrode processing steps is "the number of thermistors x 2", which makes the manufacturing process very complicated and Since the number of points increases, there is a problem that the cost increases.
【０００６】従って、複数個の正特性サーミスタを用い
ながら、１素子同様に簡素化された電極加工が可能な、
電流安定化素子や電流低減素子等に応用可能なＰＴＣ素
子が望まれている。Therefore, while using a plurality of positive temperature coefficient thermistors, it is possible to perform electrode processing as simple as one element.
A PTC element applicable to a current stabilizing element, a current reducing element, etc. is desired.
【０００７】[0007]
【課題を解決するための手段】本発明のＰＴＣ素子は、
キュリー点がそれぞれ異なる複数個の正特性サーミスタ
を並列に接続し、電極板で挾持してなるＰＴＣ素子であ
って、上記複数個の正特性サーミスタが互いに接触しな
いように酸化ジルコニウムを介在させた後に焼成して、
この正特性サーミスタと酸化ジルコニウムとが融着した
複合体を上記ＰＴＣ素子の基体に供することを特徴とし
ている。The PTC element of the present invention comprises:
A PTC element in which a plurality of positive temperature coefficient thermistors having different Curie points are connected in parallel and sandwiched by an electrode plate, and zirconium oxide is interposed so that the plurality of positive temperature coefficient thermistors do not contact each other. Bake,
The composite of the positive temperature coefficient thermistor and zirconium oxide fused together is used as the substrate of the PTC element.
【０００８】[0008]
【作用】キュリー点がそれぞれ異なる複数個の正特性サ
ーミスタを並列に接続し、１つの素子を形成すると、こ
の素子の電流−電圧特性は、各正特性サーミスタの電流
−電圧特性のピーク部分を単純に連続させたような特性
曲線となる。When a plurality of positive characteristic thermistors each having a different Curie point are connected in parallel to form one element, the current-voltage characteristic of this element has a simple peak portion of the current-voltage characteristic of each positive characteristic thermistor. The characteristic curve is continuous.
【０００９】そこで、上記構成により、異なる特性の正
特性サーミスタを複数個組み合わせることによって、電
圧変動に対する電流安定化領域の幅、および電流の変動
率を最適に設定した電流安定化素子や印加電圧に対して
電流を減衰させる電流低減効果が増大した電流低減素子
等に応用可能なＰＴＣ素子を得ることができる。Therefore, by combining a plurality of positive temperature coefficient thermistors having different characteristics with the above configuration, the width of the current stabilization region with respect to voltage fluctuations and the current stabilization element or applied voltage with the fluctuation rate of the current set optimally can be obtained. On the other hand, it is possible to obtain a PTC element that can be applied to a current reducing element or the like with an increased current reducing effect of attenuating the current.
【００１０】従って、例えばセラミックスボンド等の接
着剤、あるいはビス等の治具を用いずに、複数個の正特
性サーミスタを複合させて１素子同様の工程によって電
極を形成して一つの素子にすることができる。また、酸
化ジルコニウムを介在させて複数個の正特性サーミスタ
を複合した後に焼成するので、複数個の正特性サーミス
タを別々に焼成する手間が省ける。尚、例えばＰＴＣ素
子を電流安定化素子として用いた場合は、電圧が変動し
易い地域で使用される機器の保護、および電圧が不所望
に変動する事故に対する機器の保護等を行うことができ
る。Therefore, without using an adhesive such as a ceramic bond or a jig such as a screw, a plurality of positive temperature coefficient thermistors are combined and electrodes are formed by the same process as one element to form one element. be able to. Further, since a plurality of PTC thermistors are compounded with zirconium oxide interposed therebetween and then the PTC thermistors are fired, it is possible to save the labor of firing the PTC thermistors separately. When a PTC element is used as a current stabilizing element, for example, it is possible to protect equipment used in an area where the voltage easily fluctuates, protect equipment against accidents where the voltage fluctuates undesirably, and the like.
【００１１】[0011]
【実施例】本発明の一実施例について図１ないし図７に
基づいて説明すれば、以下の通りである。尚、本実施例
では、ＰＴＣ素子を電流安定化素子として用いた場合に
ついて説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The following will describe one embodiment of the present invention with reference to FIGS. In this embodiment, the case where the PTC element is used as the current stabilizing element will be described.
【００１２】本実施例では、正特性サーミスタとして、
後述する焼成プロファイルに従って焼成した場合に表１
に示す抵抗値Ｒおよびキュリー点Ｔｃを示すような、４
種類の異なった組成のチタン酸バリウム半導体磁器（以
下、ＰＴＣと称する）１〜４を用いた。上記抵抗値Ｒは
２５℃における値を示している。In this embodiment, as a positive temperature coefficient thermistor,
Table 1 when fired according to the firing profile described below.
The resistance value R and the Curie point Tc shown in
Barium titanate semiconductor porcelains (hereinafter referred to as PTCs) 1 to 4 having different compositions were used. The resistance value R indicates a value at 25 ° C.
【００１３】[0013]
【表１】 [Table 1]
【００１４】組成中のチタン酸鉛はチタン酸バリウムの
キュリー点Ｔｃを高温側にシフトさせるシフターであ
り、チタン酸ストロンチウムはチタン酸バリウムのキュ
リー点Ｔｃを低温側にシフトさせるシフターである。Lead titanate in the composition is a shifter for shifting the Curie point Tc of barium titanate to the high temperature side, and strontium titanate is a shifter for shifting the Curie point Tc of barium titanate to the low temperature side.
【００１５】上記ＰＴＣ１〜４のＩ−Ｖ特性、即ち、電
流−電圧特性を図３（ア）〜（エ）に示す（但し、電流
−電圧特性は両対数で表示している）。電流−電圧特性
は、各ＰＴＣ１〜４に徐々に増大する電圧を印加しなが
ら、電流値を測定することによって得られる。図３か
ら、キュリー点Ｔｃが高いものほど、ピーク電流に対応
する電圧値が大きくなり、また、電流−電圧特性曲線が
急峻になっていることがわかる。The IV characteristics of the PTCs 1 to 4, that is, the current-voltage characteristics are shown in FIGS. 3A to 3D (however, the current-voltage characteristics are shown in logarithm). The current-voltage characteristic is obtained by measuring the current value while applying a gradually increasing voltage to each PTC1-4. It can be seen from FIG. 3 that the higher the Curie point Tc, the larger the voltage value corresponding to the peak current and the steeper the current-voltage characteristic curve.
【００１６】次に、上記ＰＴＣ１とＰＴＣ４とを、図４
に示すように並列に接続し、直流可変電源５を用いて同
様に電流−電圧特性を測定したところ、図５に示すよう
な電流−電圧特性曲線が得られた。図３（ア）、図３
（エ）および図５を比較すると、図５の特性曲線は、図
３（ア）の特性曲線と図３（エ）の特性曲線との算術的
な重ね合わせにはなっておらず、図３（ア）の特性曲線
のピーク部分と図３（エ）の特性曲線のピーク部分とを
単純に連続させたような形状となっていることがわか
る。つまり、数Ｖ程度の低電圧のときには、ＰＴＣ１に
比べてＰＴＣ４の抵抗値が充分大きいので、ＰＴＣ４は
ほとんど動作していないことになり、ＰＴＣ１の電流−
電圧特性が支配的となると推論される。Next, the above PTC1 and PTC4 are shown in FIG.
When the current-voltage characteristics were similarly measured using the variable DC power supply 5 connected in parallel as shown in FIG. 5, a current-voltage characteristic curve as shown in FIG. 5 was obtained. Fig. 3 (a) and Fig. 3
5D and FIG. 5 are compared, the characteristic curve of FIG. 5 is not an arithmetic superposition of the characteristic curve of FIG. 3A and the characteristic curve of FIG. It can be seen that the shape is such that the peak portion of the characteristic curve of (A) and the peak portion of the characteristic curve of FIG. That is, at a low voltage of about several volts, the resistance value of PTC4 is sufficiently larger than that of PTC1, so that PTC4 is almost not operating, and the current of PTC1
It is inferred that the voltage characteristic becomes dominant.
【００１７】一方、印加電圧が１０Ｖ程度を越えると、
ＰＴＣ１の温度上昇は、ＰＴＣ４の温度上昇によって加
速されるため、ＰＴＣ１を流れる電流は、図３（ア）に
示された場合よりも速く減衰する。このため、印加電圧
が１０Ｖ程度を越えると、ＰＴＣ４の電流−電圧特性に
対して、ＰＴＣ１はほとんど影響を与えなくなると推論
される。このことから、ＰＴＣ１・４における最適な特
性の組合せを選択することによって、例えば２〜４０Ｖ
程度の電圧変動範囲に対する電流安定化領域の幅、およ
び電流変動率を最適に設計することが可能であると考え
られる。また、キュリー点Ｔｃがそれぞれ異なる３個以
上の複数個のＰＴＣを並列に接続することにより、電圧
の変動に対して電流をより一層安定化させることができ
ると考えられる。On the other hand, when the applied voltage exceeds about 10 V,
Since the temperature rise of PTC1 is accelerated by the temperature rise of PTC4, the current flowing through PTC1 decays faster than in the case shown in FIG. Therefore, it is inferred that when the applied voltage exceeds about 10 V, the PTC1 has almost no effect on the current-voltage characteristics of the PTC4. From this, by selecting the optimum combination of characteristics in PTC1.4, for example, 2-40V
It is considered possible to optimally design the width of the current stabilization region with respect to the voltage fluctuation range of a certain degree and the current fluctuation rate. Further, it is considered that the current can be further stabilized against the fluctuation of the voltage by connecting in parallel a plurality of three or more PTCs each having a different Curie point Tc.
【００１８】そこで、キュリー点Ｔｃ等の特性がそれぞ
れ異なる表１に示した３種類のＰＴＣ１〜３を並列に接
続して、１個のＰＴＣ素子を作成する方法について鋭意
検討した結果、上記ＰＴＣ１〜３を作成する原料粉を成
型後、この成型した原料粉同士が互いに接触しないよう
に酸化ジルコニウム（ＺｒＯ2 ）を成型した成型品を介
在させた状態で組み合わせ、下記に示す焼成プロファイ
ルに従って焼成したＰＴＣ１〜３および酸化ジルコニウ
ムの複合体が、ＰＴＣ１〜３をそれぞれ単独で焼成して
並列に接続した場合と同一の特性曲線を示し、かつ、１
素子同様に簡素化された電極加工が可能であるという事
実を究明した。尚、酸化ジルコニウムは、ＰＴＣと全く
反応しない絶縁体である。Then, as a result of earnestly studying a method of connecting three types of PTC1 to 3 shown in Table 1 having different characteristics such as Curie point Tc in parallel to each other to produce one PTC element, as a result, the above PTC1 to After molding the raw material powders for producing No. 3, PTC1 was fired in accordance with the firing profile shown below, with a molded article of zirconium oxide (ZrO 2 ) intervening so as to prevent the molded raw material powders from contacting each other. ~ 3 and zirconium oxide composites exhibit the same characteristic curves as when PTC1 to PTC1 to 3 were respectively fired individually and connected in parallel, and 1
We clarified the fact that a simplified electrode processing is possible like the device. Zirconium oxide is an insulator that does not react with PTC at all.
【００１９】この複合体を基体として用いた多重円盤型
のＰＴＣ素子を作成するための具体的な作成例について
以下に説明する。A specific production example for producing a multi-disc type PTC element using this composite as a substrate will be described below.
【００２０】図１に示すように、多重円盤型のＰＴＣ素
子の基体（複合体）１０は、それぞれ直径および特性の
異なる円盤状ないしドーナツ盤状に原料粉を成型した３
種類のＰＴＣ１〜３を同心状に配置し、かつ、互いに側
面が接触しないように酸化ジルコニウムをドーナツ盤状
に成型した成型品６・７を介在させた多重構造となって
いる。３種類のＰＴＣ１〜３の配列順序は、それぞれの
特性によらず任意であってよい。ＰＴＣ１〜３の原料粉
の成型は、例えば金型に原料粉を入れてプレス加工する
等して行う。酸化ジルコニウムの成型品６・７は、粒子
の大きさが１００μｍ以下の酸化ジルコニウム粉末（例
えば第一稀元素化学株式会社製 ＡＳ−２１００）に、
バインダーとしてポリビニルアルコール（ＰＶＡ、例え
ば日本合成化学株式会社製）を加えて乾燥したものを、
例えば金型に入れてプレス加工する等して作成する。こ
の酸化ジルコニウムの成型品６・７は、例えば肉厚が１
mm程度あればよく、さらに薄くてもよい。この基体１０
をＡｉｒ気流下で次の〜に示す焼成プロファイルに
従って焼成する。As shown in FIG. 1, a multi-disc type PTC element substrate (composite body) 10 is formed by molding raw material powder into discs or donut discs having different diameters and characteristics.
The PTCs 1 to 3 of the kind are arranged concentrically, and a multi-layered structure is formed in which molded products 6 and 7 formed by molding zirconium oxide into a donut disk shape are interposed so that the side surfaces do not contact each other. The arrangement order of the three types of PTCs 1 to 3 may be arbitrary regardless of their characteristics. The raw material powder for PTC1 to PTC3 is molded, for example, by putting the raw material powder in a mold and pressing. The molded products 6 and 7 of zirconium oxide are zirconium oxide powder having a particle size of 100 μm or less (for example, AS-2100 manufactured by Daiichi Rare Element Chemical Co., Ltd.),
Polyvinyl alcohol (PVA, for example, manufactured by Nippon Synthetic Chemical Industry Co., Ltd.) was added as a binder and dried,
For example, it is created by putting it in a mold and pressing. The zirconium oxide molded products 6 and 7 have, for example, a wall thickness of 1
It may be about mm, and may be thinner. This base 10
Is fired under air flow according to the firing profiles shown in the following.
【００２１】 室温から５００℃に２時間４５分掛け
て昇温する ５００℃で２時間保持する ５００℃から１３５０℃に４時間４５分掛けて昇温
する １３５０℃で２時間保持する １３５０℃から１０００℃に２時間４５分掛けて降
温する １０００℃から室温に炉冷（炉内で自然冷却）する 上記の焼成プロファイルに従って焼成した基体１０は、
それぞれのＰＴＣが酸化ジルコニウムと融着することに
より一体化するが、個々のＰＴＣ内の原子の拡散は殆ど
起こらない。即ち、それぞれのＰＴＣは酸化ジルコニウ
ムを介して熱的に接触しているが、融着したＰＴＣと酸
化ジルコニウムとの境界面での原子の移動は殆ど無いの
で、基体１０の電流−電圧特性は、図２に示すように、
ＰＴＣ１〜３をそれぞれ単独で焼成して並列に接続した
場合に示すと考えられる電流−電圧特性と同一の特性曲
線を示している。つまり、得られた特性曲線は、図３
（ア）〜（ウ）の特性曲線の各ピーク部分を単純に連続
させたような形状となっている。しかも、２〜２０Ｖ程
度の電圧変動範囲では、電流変動範囲がおよそ４５〜６
５ｍＡであって、図５よりも一層電流値が安定化してい
ることがわかる。尚、ＰＴＣは酸化ジルコニウムと融着
することにより一体化するので、ＰＴＣ１〜３の原料粉
や酸化ジルコニウムの成型は、厳密に行う必要はなく、
互いに側面が接触して多重する程度の精度であればよ
い。但し、粒子の大きさが１００μｍ以上の酸化ジルコ
ニウム粉末を用いると、それぞれのＰＴＣは酸化ジルコ
ニウムと融着しないので好ましくない。Temperature rising from room temperature to 500 ° C. over 2 hours 45 minutes Hold at 500 ° C. for 2 hours Temperature rising from 500 ° C. to 1350 ° C. over 4 hours 45 minutes Hold for 1 hour at 1350 ° C. 1350 ° C. to 1000 The temperature is lowered to 2 ° C. for 2 hours and 45 minutes. The furnace is cooled from 1000 ° C. to room temperature (natural cooling in the furnace).
Each PTC is fused with zirconium oxide to be integrated, but diffusion of atoms in each PTC hardly occurs. That is, the respective PTCs are in thermal contact with each other through zirconium oxide, but since there is almost no movement of atoms at the boundary surface between the fused PTC and zirconium oxide, the current-voltage characteristic of the substrate 10 is: As shown in FIG.
The characteristic curve is the same as the current-voltage characteristic that is considered to be exhibited when the PTCs 1 to 3 are fired individually and connected in parallel. That is, the obtained characteristic curve is as shown in FIG.
Each of the peak portions of the characteristic curves (a) to (c) has a shape that is simply continuous. Moreover, in the voltage fluctuation range of about 2 to 20 V, the current fluctuation range is about 45 to 6
It is 5 mA, and it can be seen that the current value is more stable than in FIG. Since PTC is fused and integrated with zirconium oxide, it is not necessary to strictly mold raw material powders of PTC1 to 3 and zirconium oxide.
The accuracy may be such that the side surfaces are in contact with each other and are multiplexed. However, it is not preferable to use zirconium oxide powder having a particle size of 100 μm or more because each PTC does not fuse with zirconium oxide.
【００２２】焼成した基体１０に、図６に示すように、
３種類のＰＴＣ１〜３が並列の接続となるように基体１
０の上面および底面にそれぞれ電極板１１・１２を取り
付け、さらに各電極板１１・１２に端子１３・１４を取
り付けて多重円盤型のＰＴＣ素子１８が完成する。この
ように、本ＰＴＣ素子１８は、３種類のＰＴＣ１〜３を
用いているにも関わらず、電極加工のための工程数は１
素子と同様に簡素化することができる。必要に応じて、
基体１０および電極板１１・１２の全体を樹脂塗膜等に
よって被覆すると、図７に示すように、ラジアルタイプ
のＰＴＣ素子１９となる。On the fired substrate 10, as shown in FIG.
Base 1 so that three types of PTC1 to 3 are connected in parallel
Electrode plates 11 and 12 are attached to the top and bottom surfaces of 0, respectively, and terminals 13 and 14 are attached to each electrode plate 11 and 12 to complete the multi-disc PTC element 18. As described above, the present PTC element 18 uses only three types of PTC1 to 3, but the number of steps for electrode processing is one.
It can be as simple as an element. If necessary,
When the substrate 10 and the electrode plates 11 and 12 are entirely covered with a resin coating film or the like, as shown in FIG. 7, a radial type PTC element 19 is obtained.
【００２３】上記構成により、本発明のＰＴＣ素子は、
電圧変動に対する電流安定化領域の幅、および電流の変
動率を最適に設定した電流安定化素子として用いること
ができる。また、例えばセラミックスボンド等の接着
剤、あるいはビス等の治具を用いずに、複数個の正特性
サーミスタを複合させて１素子同様の工程によって電極
を形成して一つの素子にすることができる。さらに、酸
化ジルコニウムを介在させて複数個の正特性サーミスタ
を複合した後に焼成するので、複数個の正特性サーミス
タを別々に焼成する手間が省ける。With the above structure, the PTC element of the present invention is
It can be used as a current stabilizing element in which the width of the current stabilizing region with respect to voltage fluctuation and the rate of current fluctuation are optimally set. Further, for example, without using an adhesive such as a ceramic bond or a jig such as a screw, a plurality of positive temperature coefficient thermistors can be combined to form an electrode in the same step as one element to form one element. .. Furthermore, since a plurality of PTC thermistors are combined with zirconium oxide interposed between them and then the PTC thermistors are fired, it is possible to save the trouble of firing the plurality of PTC thermistors separately.
【００２４】尚、本実施例は、ＰＴＣ素子を電流安定化
素子として用いた場合について説明したが、本ＰＴＣ素
子は電流低減素子として用いることもできる。この場合
は、例えば、それぞれ直径および特性の異なる円盤状お
よびドーナツ盤状に原料粉を成型した２種類のＰＴＣを
同心状に配置し、かつ、互いに側面が接触しないように
酸化ジルコニウムをドーナツ盤状に成型した成型品を介
在させた三重円盤型基体をＡｉｒ気流下で上述の焼成プ
ロファイルに従って焼成する。そして、焼成した基体の
上面に、２種類のＰＴＣに共通の電極板を取り付け、基
体底面に、各ＰＴＣ毎に独立した電極板を取り付ければ
よい。２種類のＰＴＣは同心状に配置されることにより
酸化ジルコニウムを介して熱的に接触しているので、キ
ュリー点等が低い方のＰＴＣは、キュリー点等が高い方
のＰＴＣによって効率よく加熱される。In this embodiment, the PTC element is used as the current stabilizing element, but the PTC element can also be used as the current reducing element. In this case, for example, two types of PTC formed by molding the raw material powder into a disk shape and a donut disk shape having different diameters and characteristics are arranged concentrically, and zirconium oxide is formed into a donut disk shape so that side surfaces do not contact each other. The triple disk-shaped substrate with the molded product formed in between is fired in the air flow according to the above firing profile. Then, an electrode plate common to the two types of PTCs may be attached to the top surface of the fired substrate, and an independent electrode plate for each PTC may be attached to the bottom surface of the substrate. Since the two types of PTCs are arranged concentrically and are in thermal contact with each other through zirconium oxide, the PTC having a lower Curie point is efficiently heated by the PTC having a higher Curie point. It
【００２５】上記構成により、本発明のＰＴＣ素子は、
印加電圧に対して電流を減衰させる電流低減効果が増大
した電流低減素子として用いることができる。また、例
えばセラミックスボンド等の接着剤、あるいはビス等の
治具を用いずに、２個の正特性サーミスタを複合させて
１素子同様の工程によって電極を形成して一つの素子に
することができる。さらに、酸化ジルコニウムを介在さ
せて２個の正特性サーミスタを複合した後に焼成するの
で、２個の正特性サーミスタを別々に焼成する手間が省
ける。With the above structure, the PTC element of the present invention is
It can be used as a current reducing element having an increased current reducing effect of attenuating a current with respect to an applied voltage. Also, for example, without using an adhesive such as a ceramic bond or a jig such as a screw, two positive temperature coefficient thermistors can be combined to form an electrode in the same process as one element to form one element. .. Further, since the two positive temperature coefficient thermistors are compounded with zirconium oxide interposed and then fired, the time and effort for firing the two positive temperature coefficient thermistors separately can be saved.
【００２６】[0026]
【発明の効果】本発明のＰＴＣ素子は、以上のように、
キュリー点がそれぞれ異なる複数個の正特性サーミスタ
を並列に接続し、電極板で挾持してなるＰＴＣ素子であ
って、上記複数個の正特性サーミスタが互いに接触しな
いように酸化ジルコニウムを介在させた後に焼成して、
この正特性サーミスタと酸化ジルコニウムとが融着した
複合体を上記ＰＴＣ素子の基体に供する構成である。As described above, the PTC element of the present invention has the following features.
A PTC element in which a plurality of positive temperature coefficient thermistors having different Curie points are connected in parallel and sandwiched by an electrode plate, and zirconium oxide is interposed so that the plurality of positive temperature coefficient thermistors do not contact each other. Bake,
The composite body in which the positive temperature coefficient thermistor and zirconium oxide are fused is used as the substrate of the PTC element.
【００２７】それゆえ、異なる特性の正特性サーミスタ
を複数個組み合わせることによって、電圧変動に対する
電流安定化領域の幅、および電流の変動率を最適に設定
した電流安定化素子や印加電圧に対して電流を減衰させ
る電流低減効果が増大した電流低減素子等に応用可能な
ＰＴＣ素子を得ることができる。Therefore, by combining a plurality of positive temperature coefficient thermistors having different characteristics, the width of the current stabilizing region with respect to the voltage fluctuation and the current fluctuation element for which the fluctuation rate of the current is optimally set and the current to the applied voltage are set. It is possible to obtain a PTC element that can be applied to a current reduction element or the like with an increased current reduction effect that attenuates.
【００２８】従って、例えばセラミックスボンド等の接
着剤、あるいはビス等の治具を用いずに、複数個の正特
性サーミスタを複合させて１素子同様の工程によって電
極を形成して一つの素子にすることができる。また、酸
化ジルコニウムを介在させて複数個の正特性サーミスタ
を複合した後に焼成するので、複数個の正特性サーミス
タを別々に焼成する手間が省けるという効果を奏する。Therefore, for example, without using an adhesive such as a ceramic bond or a jig such as a screw, a plurality of positive temperature coefficient thermistors are compounded to form an electrode in the same process as one device to form one device. be able to. Further, since a plurality of PTC thermistors are compounded with zirconium oxide interposed therebetween and then the PTC thermistors are fired, it is possible to save the labor of firing the plurality of PTC thermistors separately.
【図１】本発明の一実施例におけるＰＴＣ素子の基体
（複合体）を示す断面図である。FIG. 1 is a cross-sectional view showing a base body (composite body) of a PTC element according to an embodiment of the present invention.
【図２】上記ＰＴＣ素子の電流−電圧特性を示すグラフ
である。FIG. 2 is a graph showing current-voltage characteristics of the PTC element.
【図３】キュリー点がそれぞれ異なる正特性サーミスタ
の電流−電圧特性を示すグラフである。FIG. 3 is a graph showing current-voltage characteristics of positive temperature coefficient thermistors having different Curie points.
【図４】並列に接続された正特性サーミスタの電流−電
圧特性を測定するための回路図である。FIG. 4 is a circuit diagram for measuring current-voltage characteristics of positive temperature coefficient thermistors connected in parallel.
【図５】キュリー点が互いに異なる２つの正特性サーミ
スタを並列に接続した場合における電流−電圧特性を示
すグラフである。FIG. 5 is a graph showing current-voltage characteristics when two positive temperature coefficient thermistors having different Curie points are connected in parallel.
【図６】ＰＴＣ素子を示す断面図である。FIG. 6 is a cross-sectional view showing a PTC element.
【図７】被覆したＰＴＣ素子を示す正面図である。FIG. 7 is a front view showing a covered PTC element.
１ チタン酸バリウム半導体磁器（ＰＴＣ） １０ 基体（複合体） １１ 電極板 １３ 端子 1 Barium Titanate Semiconductor Porcelain (PTC) 10 Base (Composite) 11 Electrode Plate 13 Terminal
Claims (1)
性サーミスタを並列に接続し、電極板で挾持してなるＰ
ＴＣ素子であって、 上記複数個の正特性サーミスタが互いに接触しないよう
に酸化ジルコニウムを介在させた後に焼成して、この正
特性サーミスタと酸化ジルコニウムとが融着した複合体
を上記ＰＴＣ素子の基体に供することを特徴とするＰＴ
Ｃ素子。1. A P comprising a plurality of positive temperature coefficient thermistors each having a different Curie point connected in parallel and sandwiched by an electrode plate.
A TC element, wherein a composite body in which the positive temperature coefficient thermistor and zirconium oxide are melt-bonded to each other is used as a substrate of the PTC element, the zirconium oxide being interposed between the plurality of positive temperature coefficient thermistors so that they do not contact each other. PT characterized by being used for
C element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4967192A JP2613343B2 (en) | 1992-03-06 | 1992-03-06 | PTC element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4967192A JP2613343B2 (en) | 1992-03-06 | 1992-03-06 | PTC element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05251206A true JPH05251206A (en) | 1993-09-28 |
| JP2613343B2 JP2613343B2 (en) | 1997-05-28 |
Family
ID=12837638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4967192A Expired - Fee Related JP2613343B2 (en) | 1992-03-06 | 1992-03-06 | PTC element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2613343B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011529851A (en) * | 2008-08-07 | 2011-12-15 | エプコス アクチエンゲゼルシャフト | Molded body, heating device using the molded body, and method for manufacturing the molded body |
| US9363851B2 (en) | 2008-08-07 | 2016-06-07 | Epcos Ag | Heating device and method for manufacturing the heating device |
-
1992
- 1992-03-06 JP JP4967192A patent/JP2613343B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011529851A (en) * | 2008-08-07 | 2011-12-15 | エプコス アクチエンゲゼルシャフト | Molded body, heating device using the molded body, and method for manufacturing the molded body |
| US9321689B2 (en) | 2008-08-07 | 2016-04-26 | Epcos Ag | Molded object, heating device and method for producing a molded object |
| US9363851B2 (en) | 2008-08-07 | 2016-06-07 | Epcos Ag | Heating device and method for manufacturing the heating device |
| EP2310337B1 (en) * | 2008-08-07 | 2016-11-02 | Epcos AG | Heating device and method for producing a heating device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2613343B2 (en) | 1997-05-28 |
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