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JPH05294874A - Production of bisphenol a - Google Patents

Production of bisphenol a

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Publication number
JPH05294874A
JPH05294874A JP12677292A JP12677292A JPH05294874A JP H05294874 A JPH05294874 A JP H05294874A JP 12677292 A JP12677292 A JP 12677292A JP 12677292 A JP12677292 A JP 12677292A JP H05294874 A JPH05294874 A JP H05294874A
Authority
JP
Japan
Prior art keywords
phenol
bisphenol
thin film
film evaporator
adduct
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12677292A
Other languages
Japanese (ja)
Other versions
JP3219208B2 (en
Inventor
Toshihiko Furukawa
俊彦 古川
Nobuo Tani
信夫 谷
Shinji Yoshizuka
伸司 吉塚
Katsumasa Nakamura
捷征 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Chemical and Materials Co Ltd
Chiyoda Corp
Original Assignee
Nippon Steel Chemical Co Ltd
Chiyoda Chemical Engineering and Construction Co Ltd
Chiyoda Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Chemical Co Ltd, Chiyoda Chemical Engineering and Construction Co Ltd, Chiyoda Corp filed Critical Nippon Steel Chemical Co Ltd
Priority to JP12677292A priority Critical patent/JP3219208B2/en
Publication of JPH05294874A publication Critical patent/JPH05294874A/en
Application granted granted Critical
Publication of JP3219208B2 publication Critical patent/JP3219208B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

(57)【要約】 【目的】ビスフェノ−ルAとフェノ−ルの付加物から、
フェノ−ルを蒸発除去するための遠心薄膜蒸発器の運転
を長期間安定して行うこと。 【構成】ビスフェノ−ルAとフェノ−ル付加物からフェ
ノ−ルを除去してビスフェノ−ルAを製造する方法にお
いて、該付加物を45Torr以上の圧力に保持された
遠心薄膜蒸発器に装入してフェノ−ルを蒸発除去する。 【効果】長期間安定して脱フェノ−ルができ、また高純
度のビスフェノ−ルAを得ることできる。
(57) [Summary] [Purpose] From the adduct of bisphenol A and phenol,
Operate the centrifugal thin film evaporator to remove phenol by evaporation stably for a long period of time. In a method for producing bisphenol A by removing phenol from bisphenol A and a phenol adduct, the adduct is charged into a centrifugal thin film evaporator kept at a pressure of 45 Torr or more. The phenol is removed by evaporation. [Effect] It is possible to stably dephenolize for a long period of time and to obtain high-purity bisphenol A.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はビスフェノ−ルAの製造
方法に関する。詳しくは、ビスフェノ−ルAとフェノ−
ルとの付加物からフェノ−ルを除去して高純度のビスフ
ェノ−ルAを製造する方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing bisphenol A. For details, see Bisphenol A and phenol.
The present invention relates to a method for producing high-purity bisphenol A by removing phenol from an adduct with a phenol.

【0002】[0002]

【従来の技術】ビスフェノ−ルA、すなわち2,2−ビ
ス(4−ヒドロキシフェニル)プロパンは、常温固体の
化合物であり、アセトンと過剰のフェノ−ルを塩酸、酸
性陽イオン交換樹脂等の酸性触媒の存在下に反応させて
得られる。この反応混合物からビスフェノ−ルAを回収
する方法の一つは、反応混合物から水及び/又は触媒を
除去したのち、これを冷却してビスフェノ−ルAとフェ
ノ−ルの付加物を析出させ、この結晶を母液と分離し、
次いで脱フェノ−ル処理してビスフェノ−ルAを回収す
る方法である。ここで行う脱フェノ−ル処理方法として
は、特開平3−95135号公報に示されるように、遠
心薄膜蒸発器を使用する方法が一般的である。この方法
は高温に長時間さらされることがないため、ビスフェノ
−ルAの分解や着色を最小に押さえることができるとい
う点で有利な方法であるが、運転中に結晶が析出し、安
定な運転ができないことがある。
2. Description of the Related Art Bisphenol A, that is, 2,2-bis (4-hydroxyphenyl) propane, is a compound which is solid at room temperature. Acetone and excess phenol are acidified with hydrochloric acid, acidic cation exchange resin or the like. It is obtained by reacting in the presence of a catalyst. One of the methods for recovering bisphenol A from this reaction mixture is to remove water and / or catalyst from the reaction mixture and then cool it to precipitate an adduct of bisphenol A and phenol, The crystals are separated from the mother liquor,
Then, it is a method of recovering bisphenol A by dephenol treatment. As a dephenol treatment method performed here, a method using a centrifugal thin film evaporator is generally used, as disclosed in JP-A-3-95135. Since this method is not exposed to high temperature for a long time, it is an advantageous method in that the decomposition and coloring of bisphenol A can be suppressed to a minimum, but crystals are precipitated during operation and stable operation is possible. You may not be able to

【0004】[0004]

【発明が解決しようとする課題】本発明は、ビスフェノ
−ルAとフェノ−ルの付加物から遠心薄膜蒸発器を使用
して、長期、安定してフェノ−ルを蒸発除去し、ビスフ
ェノ−ルAを製造することを目的とする。
DISCLOSURE OF THE INVENTION The present invention uses a centrifugal thin-film evaporator to evaporate and remove phenol from an adduct of bisphenol A and phenol for a long period of time, and to remove bisphenol. The purpose is to produce A.

【0005】[0005]

【課題を解決するための手段】本発明者らは、遠心薄膜
蒸発器の運転不調についての原因を検討し、これは遠心
薄膜蒸発器にビスフェノ−ルAの結晶が析出することが
原因であることを突き止めると共に、これを防止するた
めには遠心薄膜蒸発器の圧力を一定以上に保てばよいこ
とを見出し、本発明本発明を完成した。
DISCLOSURE OF THE INVENTION The present inventors have examined the cause of malfunction of a centrifugal thin film evaporator, which is caused by the precipitation of bisphenol A crystals in the centrifugal thin film evaporator. The present invention has been completed by finding out that it is necessary to keep the pressure of the centrifugal thin film evaporator at a certain level or more in order to find out the above and prevent it.

【0006】すなわち、本発明は、ビスフェノ−ルAと
フェノ−ルの付加物からフェノ−ルを除去してビスフェ
ノ−ルAを製造する方法において、該付加物を45To
rr以上の圧力に保持された遠心薄膜蒸発器に装入して
フェノ−ルを蒸発除去することを特徴とするビスフェノ
−ルAの製造方法である。
That is, the present invention provides a method for producing bisphenol A by removing phenol from the adduct of bisphenol A and phenol, and adding the adduct to 45 To
A method for producing bisphenol A, which comprises charging a centrifugal thin film evaporator held at a pressure of rr or higher to remove the phenol by evaporation.

【0007】ビスフェノ−ルAとフェノ−ルの付加物
は、アセトンとフェノ−ルの反応混合物を、必要により
低沸点物除去、触媒除去等を行ったのち、冷却すること
により結晶として析出させることができる。この結晶
は、更に必要によりフェノ−ルで再結晶したり、洗浄す
ることにより不純物の殆どを除去することができる。本
発明で対象とする付加物は、このようにして得られたも
のであり、なるべく高純度の付加物が好ましい。
The adduct of bisphenol A and phenol is obtained by precipitating crystals of the reaction mixture of acetone and phenol by cooling the reaction mixture after removing low-boiling substances, removing the catalyst, etc., if necessary. You can If necessary, most of the impurities can be removed by recrystallizing this crystal with phenol or washing it. The adduct targeted by the present invention is obtained in this manner, and an adduct of high purity is preferable.

【0008】この付加物からフェノ−ルを除去するた
め、遠心薄膜蒸発器に装入する。従来、遠心薄膜蒸発器
の運転条件は、残存フェノ−ル類の低減に主眼がおか
れ、そのため30Torr以下の高真空で運転されてい
る。ところが、この付加物は少なくとも30wt%以上
のフェノ−ルを含むため、いきなり高真空の遠心薄膜蒸
発器に装入すると、フェノ−ルが短時間に多量に蒸発
し、その結果蒸発潜熱により液の温度が低下し、ビスフ
ェノ−ルAの結晶が析出することが認められた。付加物
の遠心薄膜蒸発器への装入温度を低くすることにより蒸
発を押さえ、残存フェノ−ルにビスフェノ−ルAを溶解
させることにより、装入部での結晶の析出は防止できる
が、その後の蒸発部でフェノ−ルが蒸発していくとき、
残存フェノ−ルと液温度の関係で結晶が析出する。装入
部で結晶が析出した場合は、遠心薄膜蒸発器の回転部に
結晶が付着し、回転がアンバランスになり、遠心薄膜蒸
発器自体に振動又は遠心力が生じて安定運転ができなく
なる。また、蒸発部で結晶が析出した場合、遠心薄膜蒸
発器の回転翼と胴体の間に結晶がかみこみ、異常な力が
モ−タにかかって安定運転ができなくなる。
To remove the phenol from this adduct, it is charged to a centrifugal thin film evaporator. Conventionally, the operating conditions of centrifugal thin film evaporators have been mainly focused on the reduction of residual phenols, and therefore, they are operated at a high vacuum of 30 Torr or less. However, since this adduct contains at least 30 wt% or more of phenol, when it is suddenly charged into a high-vacuum centrifugal thin-film evaporator, a large amount of the phenol evaporates in a short time, and as a result, the latent heat of vaporization causes the liquid to disappear. It was confirmed that the temperature was lowered and crystals of bisphenol A were precipitated. Evaporation is suppressed by lowering the charging temperature of the additive to the centrifugal thin film evaporator, and bisphenol A is dissolved in the residual phenol to prevent the precipitation of crystals in the charging part. When the phenol evaporates in the evaporation part of
Crystals are deposited due to the relationship between the residual phenol and the liquid temperature. When crystals are deposited in the charging part, the crystals adhere to the rotating part of the centrifugal thin film evaporator, the rotation becomes unbalanced, and the centrifugal thin film evaporator itself vibrates or centrifugally acts to make stable operation impossible. Further, when crystals are deposited in the evaporation part, the crystals are caught between the rotary blade and the body of the centrifugal thin film evaporator, and an abnormal force is applied to the motor to make stable operation impossible.

【0009】本発明で使用する遠心薄膜蒸発器の1例を
図1に示す。図中、1は胴体、2は原料装入ライン、3
は蒸気出口ライン、4は液出口ラインであり、胴体1の
内部には回転翼が胴体の内壁に近接して回転するように
設けられている。そして、蒸気出口ラインは真空系と連
絡している。また、必要によりこの遠心薄膜蒸発器は複
数連続して設けることもできる。そして、この遠心薄膜
蒸発器は45Torr以上、好ましくは50Torr以
上の圧力に保って運転される。圧力の上限はないが、脱
フェノ−ルを短時間で、効率よく行うという目的から
は、低い方が好ましいので、100Torr以下の減圧
とすることがよい。また、遠心薄膜蒸発器はジャケット
等により加熱され、所定温度に保たられるが、ビスフェ
ノ−ルAの熱分解等を防止するため約170〜220℃
に保つことがよいとされる。
An example of a centrifugal thin film evaporator used in the present invention is shown in FIG. In the figure, 1 is a body, 2 is a raw material charging line, 3
Is a vapor outlet line, and 4 is a liquid outlet line. Inside the body 1, rotary blades are provided so as to rotate close to the inner wall of the body. And the steam outlet line is in communication with the vacuum system. If necessary, a plurality of centrifugal thin film evaporators can be continuously provided. Then, the centrifugal thin film evaporator is operated while being kept at a pressure of 45 Torr or more, preferably 50 Torr or more. Although there is no upper limit of the pressure, a lower pressure is preferable for the purpose of efficiently performing dephenoling in a short time, and therefore a reduced pressure of 100 Torr or less is preferable. The centrifugal thin film evaporator is heated by a jacket or the like and kept at a predetermined temperature, but at about 170 to 220 ° C. to prevent thermal decomposition of bisphenol A.
It is recommended to keep

【0010】このような遠心薄膜蒸発器に原料ライン2
から装入されたビスフェノ−ルAとフェノ−ルの付加物
は、加熱され、フェノ−ルは蒸発され、蒸気出口ライン
から排出され、液出口ラインからビスフェノ−ルA又は
この後に次の遠心薄膜蒸発器等が続くときはビスフェノ
−ルAとフェノ−ルの混合液が排出される。この際、遠
心薄膜蒸発器の圧力を50Torr以上としたため、遠
心薄膜蒸発器内での結晶析出による運転不安定が生じな
い。
A raw material line 2 is used for such a centrifugal thin film evaporator.
The bisphenol A and the phenol adduct charged from the reactor were heated, the phenol was evaporated, the phenol was discharged from the vapor outlet line, and the bisphenol A or the subsequent centrifugal thin film was discharged from the liquid outlet line. When the evaporator or the like continues, the mixed solution of bisphenol A and phenol is discharged. At this time, since the pressure of the centrifugal thin film evaporator is set to 50 Torr or more, instability due to crystal precipitation in the centrifugal thin film evaporator does not occur.

【0011】[0011]

【作用】図2は、上記構造の遠心薄膜蒸発器について、
圧力、温度、液相中のビスフェノ−ルA濃度(BPA濃
度)の関係を調べたものである。そのBPA濃度におけ
る結晶析出限界以上の温度であれば、結晶は析出せず何
も問題は生じないが、現実には多少結晶が析出しても運
転には支障がなく、図2に示す20wt%以下の結晶濃
度であれば、問題は生じないことが認められた。したが
って、50Torr以上であれば、殆どのBPA濃度に
おいて結晶濃度が20wt%を越えず、問題が生じるこ
とがないことが分かる。また、遠心薄膜蒸発器の形状、
壁面温度あるいは付加物の装入速度、温度等によって、
適切な圧力は多少変動することがあるが、上記のように
温度の上限があり、脱フェノ−ルを可及的短時間、且つ
効率よく行うという目的から、50Torr以上という
条件を保持することは有効であり、より好ましくは、図
2の結晶濃度20wt%を越えない条件で行うことであ
る。なお、本発明の結晶濃度20wt%は、計算値を意
味する。
FIG. 2 shows the centrifugal thin film evaporator having the above structure,
The relationship between pressure, temperature, and bisphenol A concentration (BPA concentration) in the liquid phase was investigated. If the temperature is above the crystal precipitation limit at the BPA concentration, no crystals will be precipitated and no problem will occur, but in reality, even if some crystals are precipitated, there is no problem in operation, and 20 wt% shown in FIG. It was confirmed that no problem occurred if the crystal concentration was below. Therefore, it can be seen that if it is 50 Torr or more, the crystal concentration does not exceed 20 wt% at most of the BPA concentration, and no problem occurs. Also, the shape of the centrifugal thin film evaporator,
Depending on the wall temperature or the charging speed of additional materials, temperature, etc.,
Although the appropriate pressure may fluctuate to some extent, there is an upper limit of the temperature as described above, and for the purpose of efficiently performing dephenoling in the shortest possible time, it is not possible to maintain the condition of 50 Torr or more. It is effective, and more preferably, it is performed under the condition that the crystal concentration of FIG. 2 does not exceed 20 wt%. The crystal concentration of 20 wt% in the present invention means a calculated value.

【0012】[0012]

【実施例】【Example】

実施例1 ビスフェノ−ルA70wt%、フェノ−ル30wt%か
らなる付加物を150℃に予熱し、図1に示すような遠
心薄膜蒸発器に装入した。遠心薄膜蒸発器はジャケット
の200℃の蒸気により加熱され、50Torrに保持
された。このとき、液出口ライン4から抜き出された液
中のフェノ−ル濃度は4wt%であった。また、この条
件で運転された遠心薄膜蒸発器は、30日間、振動、遠
心力の発生、モ−タの過負荷等の異常現象は起きず、安
定運転が継続できた。更に、付加物を130℃に予熱し
て遠心薄膜蒸発器に装入した他は、上記と同様にして行
ったときは、液中のフェノ−ル濃度は4.3wt%であ
ったが、この場合も同様に安定運転が継続できた。
Example 1 An adduct consisting of 70 wt% of bisphenol A and 30 wt% of phenol was preheated to 150 ° C. and charged into a centrifugal thin film evaporator as shown in FIG. The centrifugal thin film evaporator was heated by steam at 200 ° C. in the jacket and kept at 50 Torr. At this time, the concentration of phenol in the liquid extracted from the liquid outlet line 4 was 4 wt%. Further, the centrifugal thin film evaporator operated under these conditions was able to continue stable operation without abnormal phenomena such as vibration, generation of centrifugal force, and overload of the motor for 30 days. Furthermore, the phenol concentration in the liquid was 4.3 wt% when carried out in the same manner as above except that the adduct was preheated to 130 ° C. and charged into the centrifugal thin film evaporator. In the same case, stable operation could be continued.

【0013】比較例1 付加物を150℃に予熱して40Torrに保たれた遠
心薄膜蒸発器に装入した他は、実施例1と同様にして行
った。このときは、液中のフェノ−ル濃度は2.7wt
%であったが、遠心薄膜蒸発器は8日目に振動、遠心力
の発生が起こり、安定運転が不能となった。しかし、遠
心薄膜蒸発器の減圧度を600Torrまで落とし、液
の温度を190℃まで上げたところ、これが解消され
た。更に、付加物を130℃に予熱して40Torrに
保たれた遠心薄膜蒸発器に装入した他は、実施例1と同
様にして行った。このときは、液中のフェノ−ル濃度は
2.7wt%であったが、遠心薄膜蒸発器は2日目にモ
−タの過負荷が起こり、運転が不能となった。
Comparative Example 1 The procedure of Example 1 was repeated, except that the adduct was preheated to 150 ° C. and charged into a centrifugal thin film evaporator maintained at 40 Torr. At this time, the concentration of phenol in the liquid is 2.7 wt.
%, The centrifugal thin-film evaporator vibrated on the 8th day and a centrifugal force was generated, which made stable operation impossible. However, when the decompression degree of the centrifugal thin film evaporator was lowered to 600 Torr and the temperature of the liquid was raised to 190 ° C., this was solved. Furthermore, the same procedure as in Example 1 was carried out except that the adduct was preheated to 130 ° C. and charged into a centrifugal thin film evaporator kept at 40 Torr. At this time, the concentration of phenol in the liquid was 2.7 wt%, but the centrifugal thin film evaporator was unable to operate due to overload of the motor on the second day.

【0014】[0014]

【発明の効果】本発明の製造方法によれば、ビスフェノ
−ルAとフェノ−ルの付加物から、遠心薄膜蒸発器を用
いて、長期間、安定にフェノ−ルを蒸発除去して、高純
度のビスフェノ−ルAを得ることができる。
Industrial Applicability According to the production method of the present invention, the phenol is stably evaporated from the adduct of bisphenol A and phenol by a centrifugal thin film evaporator for a long period of time to obtain a high concentration. It is possible to obtain pure bisphenol A.

【図面の簡単な説明】[Brief description of drawings]

【図1】遠心薄膜蒸発器の概略図1 is a schematic diagram of a centrifugal thin film evaporator.

【図2】液相中のビスフェノ−ルA濃度と温度の関係を
示すグラフ
FIG. 2 is a graph showing the relationship between bisphenol A concentration in the liquid phase and temperature.

【符号の説明】[Explanation of symbols]

1 胴体 2 原料装入ライン 3 蒸気出口ライン 4 液出口ライン 1 Body 2 Raw material charging line 3 Steam outlet line 4 Liquid outlet line

───────────────────────────────────────────────────── フロントページの続き (72)発明者 谷 信夫 福岡県宗像郡福間町若木台5−2−12 (72)発明者 吉塚 伸司 福岡県鞍手郡鞍手町中山3485−79 (72)発明者 中村 捷征 福岡県宗像市大穂1007 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Nobuo Tani 5-2-12 Wakakidai, Fukuma-cho, Munakata-gun, Fukuoka Prefecture (72) Inventor Shinji Yoshizuka 3485-79 (72) Nakamura, Kurate-cho, Kurate-gun, Fukuoka Prefecture Nakamura 1007 Oho, Munakata City, Fukuoka Prefecture

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】ビスフェノ−ルAとフェノ−ルの付加物か
らフェノ−ルを除去してビスフェノ−ルAを製造する方
法において、該付加物を45Torr以上の圧力に保持
された遠心薄膜蒸発器に装入してフェノ−ルを蒸発除去
することを特徴とするビスフェノ−ルAの製造方法。
1. A method of producing bisphenol A by removing phenol from an adduct of bisphenol A and phenol, wherein the adduct is kept at a pressure of 45 Torr or more. A method for producing bisphenol A, which comprises charging the mixture into a reactor to evaporate and remove the phenol.
【請求項2】ビスフェノ−ルAとフェノ−ルの付加物か
らフェノ−ルを除去してビスフェノ−ルAを製造する方
法において、該付加物を45Torr以上の圧力に保持
された遠心薄膜蒸発器に装入し、且つ液相中の結晶濃度
が20wt%を越えない条件でフェノ−ルを蒸発除去す
ることを特徴とするビスフェノ−ルAの製造方法。
2. A method for producing bisphenol A by removing phenol from the adduct of bisphenol A and phenol, wherein the adduct is kept at a pressure of 45 Torr or more. A method for producing bisphenol A, characterized in that the phenol is vaporized and removed under conditions that the concentration of crystals in the liquid phase does not exceed 20 wt%.
JP12677292A 1992-04-20 1992-04-20 Method for producing bisphenol A Expired - Lifetime JP3219208B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12677292A JP3219208B2 (en) 1992-04-20 1992-04-20 Method for producing bisphenol A

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12677292A JP3219208B2 (en) 1992-04-20 1992-04-20 Method for producing bisphenol A

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JPH05294874A true JPH05294874A (en) 1993-11-09
JP3219208B2 JP3219208B2 (en) 2001-10-15

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6951965B2 (en) 2002-08-08 2005-10-04 Mitsubishi Chemical Corporation Process for purifying phenol-containing bisphenol A

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6951965B2 (en) 2002-08-08 2005-10-04 Mitsubishi Chemical Corporation Process for purifying phenol-containing bisphenol A
USRE41290E1 (en) 2002-08-08 2010-04-27 Mitsubishi Chemical Corporation Process for purifying phenol-containing bisphenol A

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JP3219208B2 (en) 2001-10-15

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