JPH05297582A - Positive photoresist composition - Google Patents

Abstract

PURPOSE:To improve resolution, sensitivity and developing property by incorporating a 1,2-naphthoquinone diazide-5-(and/or -4-) sulfonate of polyhydroxy compd. and an alkali-soluble resin. CONSTITUTION:The photoresist compsn. contains an alkali-soluble resin and a 1,2-naphthoquinone diazide-5-(and/or -4-) sulfonate of polyhydroxy compd. expressed by formula. In formula, R1 is an org. group, single crystal,-S-,-SO-, etc., R2 is a hydrogen atom, univalent org. group, etc., and R3-R7 are hydrogen atoms, hydroxyl groups, halogen atoms, alkyl groups, alkoxy groups or alkenyl groups, but at least one of R3-R5 is a hydroxyl group. X is a bivalent org. group, and m is 0 or 1. This compd. is obtd. by effecting normal esterification of whole or part of hydroxyl groups in the polyhydroxy compd. with 1,2- naphthoquinone diazide--5-(and/or -4-) sulfonyl chloride in the presence of a basic catalyst.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a radiation-sensitive positive photoresist composition, and more particularly to a photoresist composition for microfabrication having a high resolution and sensitivity and a good pattern cross-sectional shape. It is a thing. The positive type photoresist according to the present invention is a semiconductor wafer,
It is applied to a substrate of glass, ceramics, metal or the like by spin coating or roller coating to a thickness of 0.5 to 3 μm. After that, it is heated and dried, and a circuit pattern or the like is baked by irradiation of ultraviolet rays or the like through an exposure mask and developed to form a positive image. Further, by etching this positive image as a mask, a pattern can be processed on the substrate. IC is a typical application field
Etc., semiconductor manufacturing process, liquid crystal, circuit board manufacturing such as thermal head, and other photo-ablation process.

[0002]

2. Description of the Related Art As a positive photoresist composition,
Generally, a composition containing an alkali-soluble resin and a naphthoquinonediazide compound as a photosensitive material is used. For example, US Pat. No. 3,666,473 as “Novolak type phenol resin / naphthoquinone diazide substituted compound”
No., USP-4,115,128 and USP-4,17
No. 3,470, etc., and the most typical composition is "cresol-formaldehyde novolak resin /
An example of "trihydroxybenzophenone-1,2 naphthoquinone diazide sulfonate" is Thompson "Introduction Tou Microlithography".
(LF Thompson "Intro-ductio
n to Microlitho-graphy ”)
(ACS publication, No. 219, P112 to 121). Novolac resin as a binder is particularly useful for this application because it can be dissolved in an alkaline aqueous solution without swelling, and when it is used as a mask for etching, it gives a high resistance to plasma etching. Is. Further, the naphthoquinonediazide compound used for the photosensitive material acts as a dissolution inhibitor which lowers the alkali solubility of the novolak resin by itself, but when decomposed by light irradiation, an alkali-soluble substance is generated and rather the alkali solubility of the novolak resin is increased. It is unique in that it acts to enhance it, and is particularly useful as a photosensitive material for a positive photoresist because of its large change in properties with respect to light. From this point of view, many positive photoresists containing a novolak resin and a naphthoquinonediazide type photosensitive material have been developed and put to practical use from the viewpoint of 1.5 μm to 2 μm.
We have achieved sufficient results in line width processing down to about μm.

However, the degree of integration of integrated circuits is increasing more and more, and in the manufacture of semiconductor substrates such as VLSIs,
It has become necessary to process an ultrafine pattern having a line width of μm or less. For such applications, a photoresist having a particularly high resolution, a high pattern shape reproducibility that accurately copies the shape of the exposure mask, and a high sensitivity from the viewpoint of high productivity is required, and the conventional positive photoresist described above is applicable. The reality is that we cannot do it.

[0004]

Therefore, the object of the present invention is to (1) particularly in the manufacture of semiconductor devices.
A positive photoresist composition having high resolution,
(2) A positive photoresist composition that accurately reproduces mask dimensions over a wide range of photomask line width,
(3) A positive photoresist composition capable of forming a resist pattern having a cross-sectional shape with a high aspect ratio in a pattern having a line width of 1 μm or less, (4) a pattern having a shape in which the side wall of the pattern cross section is nearly vertical An object of the present invention is to provide a positive photoresist composition to be obtained, (5) a positive photoresist composition having a wide development latitude, and (6) a positive photoresist composition in which a resist image obtained has excellent heat resistance.

[0005]

Means for Solving the Problems The inventors of the present invention have made extensive studies by paying attention to the above-mentioned characteristics, and as a result, can achieve the above object by using an alkali-soluble resin and a quinonediazide compound having a specific structural formula. Based on this finding, the present invention has been completed. That is, the object of the present invention is 1,2-naphthoquinonediazide-5- (and / or a polyhydroxy compound represented by the following general formula (I).
Or -4-) Sulfonic acid ester and an alkali-soluble resin are contained in the positive photoresist composition.

[0006]

[Chemical 2]

The present invention will be described in detail below.

In R _{3 to} R ₇ of the above general formula (I), the halogen atom is a chlorine atom, a bromine atom or an iodine atom, and the alkyl group is a methyl group, an ethyl group, a propyl group or an n-butyl group, An alkyl group having 1 to 4 carbon atoms such as an isobutyl group, a sec-butyl group or a t-butyl group, an alkoxy group is a methoxy group, an ethoxy group, a hydroxyethoxy group, a propoxy group, a hydroxypropoxy group, an isopropoxy group, An alkoxy group having 1 to 4 carbon atoms such as an n-butoxy group, an isobutoxy group, a sec-butoxy group or a t-butoxy group is preferable. The alkenyl group is preferably a C2-C4 alkenyl group such as a vinyl group, a propenyl group, an allyl group or a butenyl group.

The compound represented by the general formula (I) can be synthesized, for example, according to the method described in JP-A-49-250. That is, it can be obtained by reacting the biscyclohexanone or triscyclohexanone compound represented by the general formula (II) with the phenol compound represented by the general formula (III).

[0010]

[Chemical 3]

The biscyclohexanone or triscyclohexanone used for synthesis in the present invention can be easily synthesized by, for example, oxidizing hydrogenated bisphenol and hydrogenated trisphenol with dichromate or the like. Alternatively, A. Terada, Bulletin of the th
e ChemicalSociety of Japan
n, 39, No. 10, p. 2195 (1966), hydrogenated bisphenol is oxidized with chromic anhydride to synthesize biscyclohexanone. On the other hand, most of the starting compounds, phenol compounds, are commercially available as industrial materials and can be easily obtained.

In the present invention, the catalyst used in the reaction of the phenol compound with the biscyclohexanone or triscyclohexanone compound is an inorganic acid such as phosphoric acid, sulfuric acid or hydrochloric acid, or a protic acid such as benzenesulfonic acid or paratoluenesulfonic acid. Alternatively, a certain kind of metal ion, for example, a halide of zinc, iron, copper, cobalt, manganese or the like can be mentioned, and a hydroxide of an alkali metal, a phenol salt or the like may be used. Further, a mercapto group-containing cocatalyst such as ethanethiol, 1-butanethiol, thiophenol, and mercaptoacetic acid may be used.

In the reaction of the above biscyclohexanone or triscyclohexanone with the phenol compound, it is preferable to use the phenol compound in excess of the stoichiometric amount. In this reaction, the preferred molar ratio of biscyclohexanone starting material to phenol compound is 1: 4.
˜1: 30 and the preferred molar ratio of triscyclohexanone starting material to phenol compound is 1: 6˜.
The range is 1:40. The reaction temperature is preferably in the range of 0 to 150 ° C. The progress of the reaction can be monitored by chromatography or spectroscopy. Specific examples of the compound represented by formula (I) thus obtained include the following [Ia] to [Ik], but are not limited thereto. is not.

[0014]

[Chemical 4]

[0015]

[Chemical 5]

[0016]

[Chemical 6]

[0017]

[Chemical 7]

These polyhydroxy compounds may be used alone or in combination of two or more.

The compound of the present invention comprises, for example, some or all of the hydroxyl groups of the polyhydroxy compound described above in the presence of 1,2-naphthoquinonediazide-5- (and / or-4-) sulfonyl chloride and a basic catalyst. And can be obtained by carrying out a usual esterification reaction. That is, a predetermined amount of polyhydroxy compound and 1,2-naphthoquinonediazide-5-
A solvent such as (and / or -4-) sulfonyl chloride, dioxane, acetone, methyl ethyl ketone, N-methylpyrrolidone, etc. is charged into the flask, and a basic catalyst such as sodium hydroxide, sodium carbonate, sodium hydrogen carbonate, triethylamine, etc. is added dropwise. And condense. The obtained product is washed with water, purified, and dried. In the above esterification reaction, a mixture having different esterification numbers and esterification positions can be obtained. Therefore, the esterification rate in the present invention is defined as the average value of this mixture. The esterification rate thus defined is the same as that of the raw material polyhydroxy compound and 1,2-naphthoquinonediazide-5-
It can be controlled by the mixing ratio with (and / or -4-) sulfonyl chloride. That is, the added 1,2-naphthoquinonediazide-5- (and / or -4-) sulfonyl chloride undergoes an esterification reaction substantially in its entirety, and therefore, in order to obtain a mixture having a desired esterification rate, The molar ratio of may be adjusted. If necessary, 1,2-naphthoquinonediazide-5-sulfonic acid ester and 1,2-naphthoquinonediazide-4-sulfonic acid ester can be used in combination. Moreover, the reaction temperature in the said method is -20-60 degreeC normally, Preferably it is 0-40 degreeC. When the photosensitive compound of the present invention synthesized by the above method is used as a resin composition, it is used singly or as a mixture of two or more kinds in combination with an alkali-soluble resin. Is 5 to 100 parts by weight, preferably 10 to 50 parts by weight, relative to 100 parts by weight of the novolak resin. If the use ratio is less than 5 parts by weight, the residual film rate is remarkably lowered, and if it exceeds 100 parts by weight, the sensitivity and the solubility in a solvent are lowered.

Examples of the alkali-soluble resin used in the present invention include novolak resin, acetone-pyrogallol resin, polyhydroxystyrene and derivatives thereof. Among these, novolak resin is particularly preferable,
It can be obtained by addition-condensing an aldehyde with a predetermined monomer as a main component in the presence of an acidic catalyst. Specific monomers include phenol, m-cresol, p
-Cresols, cresols such as o-cresol, 2,
Xylenols such as 5-xylenol, 3,5-xylenol, 3,4-xylenol, and 2,3-xylenol,
alkylphenols such as m-ethylphenol, p-ethylphenol, o-ethylphenol, pt-butylphenol, 2,3,5-trimethylphenol,
Trialkylphenols such as 2,3,4-trimethylphenol, p-methoxyphenol, m-methoxyphenol, 3,5-dimethoxyphenol, 2-methoxy-4-methylphenol, m-ethoxyphenol, p-ethoxyphenol , M-propoxyphenol, p-propoxyphenol, m-butoxyphenol, p-butoxyphenol, and other alkoxyphenols, 2-methyl-4-isopropylphenol, and other bisalkylphenols, m-chlorophenol, p-chlorophenol. , O-chlorophenol, dihydroxybiphenyl, bisphenol A, phenylphenol,
Hydroxy aromatic compounds such as resorcinol and naphthol may be used alone or in combination of two or more, but are not limited thereto.

Examples of aldehydes include formaldehyde, paraformaldehyde, acetaldehyde, propylaldehyde, benzaldehyde, phenylacetaldehyde, α-phenylpropylaldehyde, β-phenylpropylaldehyde, o-hydroxybenzaldehyde, m-hydroxybenzaldehyde, p. -Hydroxybenzaldehyde, o-chlorobenzaldehyde,
m-chlorobenzaldehyde, p-chlorobenzaldehyde, o-nitrobenzaldehyde, m-nitrobenzaldehyde, p-nitrobenzaldehyde, o-methylbenzaldehyde, m-methylbenzaldehyde, p-
Methylbenzaldehyde, p-ethylbenzaldehyde, pn-butylbenzaldehyde, furfural,
Chloroacetaldehyde and acetals thereof such as chloroacetaldehyde diethyl acetal can be used, and of these, formaldehyde is preferably used. These aldehydes are
They may be used alone or in combination of two or more. As the acidic catalyst, hydrochloric acid, sulfuric acid, formic acid, acetic acid, oxalic acid or the like can be used. The weight average molecular weight of the thus obtained novolak resin is preferably in the range of 2,000 to 30,000. If it is less than 2000, the film loss of the unexposed area after development is large, and if it exceeds 30,000, the developing speed becomes slow. Particularly preferred is 6000-200
The range is 00. Here, the weight average molecular weight is defined as having a polystyrene conversion value of gel permeation chromatography.

In the present invention, the photosensitive material should be mainly used, but if necessary, 1,2-naphthoquinonediazide-5- (and / or-4-) sulfonyl chloride of the polyhydroxy compound shown below may be used. The esterification product of can be used together. Examples of the polyhydroxy compound include, for example, 2,3,4-trihydroxybenzophenone, 2,4,4'-trihydroxybenzophenone and 2,3,4-trihydroxybenzophenone.
4,6-trihydroxybenzophenone, 2,3,4-trihydroxy-2'-methylbenzophenone, 2,3,4,
4'-tetrahydroxybenzophenone, 2,2 ', 4,4'
-Tetrahydroxybenzophenone, 2,4,6,3 ', 4'
-Pentahydroxybenzophenone, 2,3,4,2 ', 4'
-Pentahydroxybenzophenone, 2,3,4,2 ', 5'
-Pentahydroxybenzophenone, 2,4,6,3 ',
4 ', 5'-hexahydroxybenzophenone, 2,3,4,
Polyhydroxybenzophenones such as 3 ', 4', 5'-hexahydroxybenzophenone, 2,3,4-trihydroxyacetophenone, 2,3,4-trihydroxyphenyl pentyl ketone, 2, Polyhydroxyphenyl alkyl ketones such as 3,4-trihydroxyphenylhexyl ketone, bis (2,4-dihydroxyphenyl) methane, bis (2,3,4-trihydroxyphenyl) methane, bis (2 , 4-dihydroxyphenyl) propane-
1, bis (2,3,4-trihydroxyphenyl) propane-1, bis ((poly) hydroxyphenyl) alkanes such as nordihydroguaiaretic acid, propyl 3,4,5-trihydroxybenzoate Polyhydroxybenzoic acid esters such as phenyl 2,3,4-trihydroxybenzoate, phenyl 3,4,5-trihydroxybenzoate, bis (2,3,4-trihydroxybenzoyl) methane, bis (3 Bis (polyhydroxybenzoyl) such as -acetyl-4,5,6-trihydroxyphenyl) -methane, bis (2,3,4-trihydroxybenzoyl) benzene and bis (2,4,6-trihydroxybenzoyl) benzene ) Alkane or bis (polyhydroxybenzoyl) aryls, ethylene glycol-di (3,5-dihydroxybenzoate), ethylene glycol Report (3,4,
5-trihydroxybenzoate) and the like alkylene-di
(Polyhydroxybenzoates) 2,3,4-biphenyltriol, 3,4,5-biphenyltriol,
3,5,3 ', 5'-biphenyl tetrol, 2,4,2', 4 '
-Biphenyl tetrol, 2,4,6,3 ', 5'-biphenyl pentol, 2,4,6,2', 4 ', 6'-biphenyl hexol, 2,3,4,2 Polyhydroxybiphenyls such as ', 3', 4'-biphenylhexol and 4,4'-thiobis
Bis (polyhydroxy) sulfides such as (1,3-dihydroxy) benzene, bis (polyhydroxyphenyl) ethers such as 2,2 ′, 4,4′-tetrahydroxydiphenyl ether, 2,2 ′, Bis (polyhydroxyphenyl) sulfoxides such as 4,4′-tetrahydroxydiphenyl sulfoxide, bis (polyhydroxyphenyl) sulfones such as 2,2 ′, 4,4′-diphenyl sulfone, 4,4 ', 3 ", 4" -tetrahydroxy-3,5,
3 ', 5'-tetramethyltriphenylmethane, 4,4',
2 ", 3", 4 "-pentahydroxy-3,5,3 ', 5'-
Tetramethyltriphenylmethane, 2,3,4,2 ', 3',
4'-hexahydroxy-5,5'-diacetyltriphenylmethane, 2,3,4,2 ', 3', 4 ', 3 ", 4"-octahydroxy-5,5'-diacetyltriphenyl methane,
Polyhydroxytriphenylmethanes such as 2,4,6,2 ', 4', 6'-hexahydroxy-5,5'-dipropionyltriphenylmethane, 3,3,3 ', 3'-tetramethyl-
1,1'-spirobi-indan-5,6,5 ', 6'-tetrol, 3,3,3', 3'-tetramethyl-1,1'-spirobi-indane-5,6,7,5 ', 6', 7'-hexool,
3,3,3 ', 3'-Tetramethyl-1,1'-spirobi-indane-4,5,6,4', 5 ', 6'-hexool, 3,3,
Polyhydroxyspirobi-indanes such as 3 ', 3'-tetramethyl-1,1'-spirobi-indane-4,5,6,5', 6 ', 7'-hexool, 3,3-bis ( 3,4-dihydroxyphenyl) phthalide, 3,3-bis (2,3,4
-Trihydroxyphenyl) phthalide, 3 ', 4', 5 ',
It is possible to use polyhydroxyphthalides such as 6′-tetrahydroxyspiro [phthalide-3,9′-xanthene] or flavono dyes such as morin, quercetin and rutin. Further, a low-nucleus body of a phenol resin such as a novolak resin can also be used. The naphthoquinone diazide ester photosensitive materials of these polyhydroxy compounds are used alone or in combination of two or more kinds. The ratio of the photosensitive material to the alkali-soluble resin used is 5 to 100 parts by weight, preferably 10 to 100 parts by weight of the resin.
It is 50 parts by weight. If the use ratio is less than 5 parts by weight, the residual film rate is remarkably reduced, while if it exceeds 100 parts by weight, the sensitivity and the solubility in a solvent are deteriorated.

The composition of the present invention may further contain a polyhydroxy compound in order to accelerate the dissolution in the developing solution. Preferred polyhydroxy compounds include phenols, resorcin, phloroglucin, 2,3,4-trihydroxybenzophenone, 2,3,4,4'-tetrahydroxybenzophenone, 2,3,4,3 ', 4 ', 5'
-Hexahydroxybenzophenone, acetone-pyrogallol condensation resin, phlorogluside, 2,4,2 ', 4'-
Biphenyl tetrol, 4,4'-thiobis (1,3-
Dihydroxy) benzene, 2,2 ', 4,4'-tetrahydroxydiphenyl ether, 2,2', 4,4'-tetrahydroxydiphenyl sulfoxide, 2,2 ', 4,
4'-tetrahydroxydiphenyl sulfone and the like can be mentioned. These polyhydroxy compounds are usually used in an amount of 100 parts by weight based on 100 parts by weight of the quinonediazide compound.
It may be added in an amount of not more than 5 parts by weight, preferably not more than 5 to 50 parts by weight.

As the solvent for dissolving the photosensitive material and the alkali-soluble novolak resin of the present invention, ketones such as methyl ethyl ketone and cyclohexanone, 4-ethoxy-2
-Ketoethers such as butanone, 4-methoxy-4-methyl-2-pentanone, alcohol ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether, ethers such as dioxane and ethylene glycol dimethyl ether, methyl cellosolve acetate, ethyl Cellosolve esters such as cellosolve acetate, fatty acid esters such as butyl acetate, methyl lactate, ethyl lactate, halogenated hydrocarbons such as 1,1,2-trichloroethylene, dimethylacetamide, N-
Examples thereof include highly polar solvents such as methylpyrrolidone, dimethylformamide and dimethylsulfoxide. These solvents may be used alone or as a mixture of a plurality of solvents.

A surfactant may be added to the positive photoresist composition of the present invention in order to further improve the coating properties such as striation. Examples of the surfactant include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, polyoxyethylene oleyl ether, and other polyoxyethylene alkyl ethers, polyoxyethylene octylphenol ether, polyoxyethylene nonyl. Polyoxyethylene alkyl allyl ethers such as phenol ethers, polyoxyethylene / polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, sorbitan trioleate, sorbitan tristea Sorbitan fatty acid esters such as rate, polyoxyethylene sorbitan monolaurate, polyoxyethylene sol Monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan tristearate, etc., polyoxyethylene sorbitan fatty acid esters nonionic surface active agents such as, Efutotsupu EF
301, EF303, EF352 (manufactured by Shin-Akita Kasei Co., Ltd.),
Megafacs F171, F173 (Dainippon Ink Co., Ltd.)
), Fluorard FC430, FC431 (Sumitomo 3M Ltd.), Asahi Guard AG710, Surflon S
-382, SC101, SC102, SC103, SC10
4, SC105, SC106 (manufactured by Asahi Glass Co., Ltd.), fluorine-based surfactant, organosiloxane polymer KP341
(Shin-Etsu Chemical Co., Ltd.) or acrylic acid-based or methacrylic acid-based (co) polymerized polyflow No. 75, No. 95
(Manufactured by Kyoeisha Oil and Fat Chemical Co., Ltd.) and the like. The amount of these surfactants to be blended is 100% for the alkali-soluble resin and quinonediazide compound in the composition of the present invention.
It is usually 2 parts by weight or less, preferably 1 part by weight or less, per part by weight. These surfactants may be added alone or in some combinations.

As the developer for the positive photoresist composition of the present invention, sodium hydroxide, potassium hydroxide,
Inorganic alkalis such as sodium carbonate, sodium silicate, sodium metasilicate and aqueous ammonia, primary amines such as ethylamine and n-propylamine, secondary amines such as diethylamine and di-n-butylamine, triethylamine and methyldiethylamine. Tertiary amines such as
Use aqueous solutions of alcohol amines such as dimethylethanolamine and triethanolamine, quaternary ammonium salts such as tetramethylammonium hydroxide and tetraethylammonium hydroxide, cyclic amines such as pyrrole and piperidine, and alkalis such as You can Further, an appropriate amount of alcohols and surfactants may be added to the above aqueous solution of alkalis for use.

The positive photoresist composition of the present invention may contain a dye, a plasticizer and an adhesion aid, if necessary. Specific examples thereof include dyes such as methyl violet, crystal violet and malachite green, stearic acid, acetal resins, phenoxy resins, plasticizers such as alkyd resins, and adhesion promoters such as hexamethyldisilazane and chloromethylsilane. is there.

After applying the above-mentioned positive photoresist composition onto a substrate (eg, silicon / silicon dioxide coating) used for the production of precision integrated circuit devices by a suitable coating method such as a spinner or a coater, a predetermined coating is performed. A good resist can be obtained by exposing through a mask and developing. Examples of the present invention will be shown below, but the present invention is not limited thereto. Unless otherwise specified,% means% by weight.

[0029]

【Example】

 (1) Synthesis of compound [Ia]

[0030]

[Chemical 8]

520 g of toluene, 602 g of phenol,
And 189 g of 2,2-bis (4-oxocyclohexyl) propane were stirred at room temperature, 10 ml of n-octylmercaptan was further added, and the reaction was allowed to proceed while blowing dry hydrogen chloride gas. It became cloudy after about 2 hours. Further, 520 g of toluene was added and reacted for 1 hour, then, hydrogen chloride gas was removed from the system by nitrogen gas, the produced crystals were filtered off, and washed with hot water to obtain 437 g of a slightly yellow powder, This was purified by recrystallizing with ethyl ether. As a result of gas chromatographic analysis, this powder had a purity of 99.8% and a melting point of 178 ° C.

(2) Synthesis of compound [Ib]

[0033]

[Chemical 9]

130 g of toluene, o-cresol 173
g, and 47.2 g of 2,2-bis (4-oxocyclohexyl) propane were stirred at room temperature, to which 2.6 ml of octyl mercaptan and 0.5 p-toluenesulfonic acid were added.
g, and after reacting at 50 ° C. for 2 hours, 0.5 g of p-toluenesulfonic acid was further added and the reaction was continued for 2 hours. After washing with a saturated saline solution, dehydration and drying, cresol and toluene were removed using an evaporator, and recrystallization was carried out using cyclohexane to obtain 115 g of a white powder having a purity of 99.3% and a melting point of 169 ° C. (3) Synthesis of compound [Ik]

[0035]

[Chemical 10]

489 g of toluene, 565 g of phenol,
165 g of 1,1,3-tris (4-oxocyclohexyl) propane and 6.5 ml of octyl mercaptan were stirred at room temperature, blown with dry hydrogen chloride gas, reacted for 1 hour, and further reacted at 70 ° C. for 2 hours. And then toluene 4
89 g was added and reacted for 2 hours. After removing hydrogen chloride gas, the generated crystals were filtered off. After washing with toluene and boiling water, dehydration and drying, and recrystallization using a toluene-methanol system, 401 g of a slightly yellow powder having a purity of 96.7% and a melting point of 204 ° C was obtained.

(4) Synthesis of Photosensitive Material a 28.8 g of the compound [Ia] synthesized in Synthesis Example (1),
40.3 g of 1,2-naphthoquinonediazide-5-sulfonyl chloride and 500 ml of acetone were charged into a three-necked flask and uniformly dissolved. Then, triethylamine / acetone = 15.9 g / 50 ml was gradually added dropwise, and 2
The reaction was carried out at 5 ° C for 3 hours. The reaction mixture was poured into 2500 ml of a 1% hydrochloric acid aqueous solution, the precipitate formed was filtered off, and washed with water.
After drying (40 ° C.), 44.9 g of 1,2-naphthoquinonediazide-5-sulfonic acid ester of [Ia] compound (photosensitive material a) was obtained.

(5) Synthesis of Photosensitive Material b 31.6 g of [Ib] compound synthesized in Synthesis Example (2),
1,3-naphthoquinonediazide-5-sulfonyl chloride (37.6 g) and acetone (500 ml) were charged into a three-necked flask and uniformly dissolved. Then, triethylamine / acetone = 14.9 g / 50 ml was gradually added dropwise, and 2
The reaction was carried out at 5 ° C for 5 hours. The reaction mixture was poured into 2500 ml of a 1% hydrochloric acid aqueous solution, the precipitate formed was filtered off, and washed with water.
After drying (40 ° C.), 46.3 g of 1,2-naphthoquinonediazide-5-sulfonic acid ester of [Ib] compound (photosensitive material b) was obtained.

(6) Synthesis of Photosensitive Material c 21.0 g of the [Ik] compound synthesized in Synthesis Example (3),
30.2 g of 1,2-naphthoquinonediazide-5-sulfonyl chloride and 500 ml of acetone were charged into a three-necked flask and uniformly dissolved. Then, triethylamine / acetone = 12.0 g / 50 ml was gradually added dropwise, and 2
The reaction was carried out at 5 ° C for 5 hours. The reaction mixture was poured into 2500 ml of a 1% hydrochloric acid aqueous solution, the precipitate formed was filtered off, and washed with water.
After drying (40 ° C.), 34.8 g of 1,2-naphthoquinonediazide-5-sulfonic acid ester of [Ik] compound (photosensitive material c) was obtained.

(7) Synthesis of Photosensitive Material d 2,3,4-trihydroxybenzophenone 11.5
g, 1,2-naphthoquinonediazide-5-sulfonyl chloride (30.2 g) and acetone (300 ml) were charged into a three-necked flask and uniformly dissolved. Then, triethylamine / acetone = 11.4 g / 50 ml was gradually added dropwise, and the mixture was reacted at 25 ° C. for 3 hours. The reaction mixture was poured into 1500 ml of a 1% aqueous hydrochloric acid solution, the precipitate formed was filtered off,
After washing with water and drying (40 ℃), 2,3,4-trihydroxybenzophenone 1,2-naphthoquinonediazide-
59.8 g of 5-sulfonic acid ester (photosensitive material d) was obtained.

(8) Synthesis of Photosensitive Material e 2,3,4,4′-Tetrahydroxybenzophenone 1
2.3 g, 1,2-naphthoquinonediazide-5-sulfonyl chloride 40.3 g, and acetone 300 ml 3
It was charged in a single-necked flask and uniformly dissolved. Then, triethylamine / acetone = 15.2 g / 50 ml was gradually added dropwise, and the mixture was reacted at 25 ° C. for 3 hours. 1% of reaction mixture
It was poured into 1500 ml of an aqueous hydrochloric acid solution, the precipitate formed was filtered off, washed with water and dried (40 ° C), and then 2, 3, 4, 4'-
1,2-naphthoquinonediazide-5-sulfonic acid ester of tetrahydroxybenzophenone (photosensitive material e) 3
9.7 g was obtained.

(9) Synthesis of novolak resin 40 g of m-cresol, 60 g of p-cresol, 37%
Formalin aqueous solution (49 g) and oxalic acid (0.13 g) were charged into a three-necked flask, heated to 100 ° C. with stirring, and reacted for 15 hours. Then raise the temperature to 200 ° C,
The pressure was gradually reduced to 5 mmHg to remove water, unreacted monomers, formaldehyde, oxalic acid and the like. Next, the molten alkali-soluble novolak resin was returned to room temperature and recovered. The obtained novolak resin has a weight average molecular weight of 7
It was 100 (polystyrene conversion).

(10) Preparation and Evaluation of Positive Photoresist Composition 1.3 g of each of photosensitive materials a to e obtained in the above (4) to (8)
Further, 5 g of the cresol novolak resin (molecular weight 7100) obtained in (9) above was dissolved in 15 g of ethyl cellosolve acetate and filtered using a 0.2 μm microfilter to prepare a photoresist composition. This photoresist composition was applied to a silicon wafer using a spinner, and a vacuum adsorption type hot plate was applied at 100 ° C. for 90
After drying for 2 seconds, a resist film having a thickness of 1.2 μm was obtained. This film was exposed using a reduction projection exposure apparatus (reduction projection exposure apparatus FPA-1550 manufactured by Canon Inc.), developed with a 2.38% tetramethylammonium hydroxide aqueous solution for 1 minute, washed with water for 30 seconds and dried. The resist pattern of the silicon wafer thus obtained was observed with a scanning electron microscope to evaluate the resist. The results are shown in Table 2.
Shown in. The sensitivity was defined as the reciprocal of the exposure dose for reproducing a 0.7 μm mask pattern, and was shown as a relative value to the sensitivity of Comparative Example 1. The residual film rate was expressed as a percentage of the ratio of the unexposed area before and after development. The resolving power represents a limiting resolving power in an exposure amount that reproduces a 0.7 μm mask pattern. The heat resistance showed the temperature at which the resist pattern-patterned silicon wafer was baked in a convection oven for 30 minutes and the pattern was not deformed. The shape of the resist is 0.
The angle (θ) formed by the resist wall surface and the plane of the silicon wafer in the 7 μm resist pattern cross section was expressed. As can be seen from the above, the resist using the photosensitive material a, b or c of the present invention was particularly excellent in resolution and resist shape. The photosensitizer of the present invention is also excellent in solubility in ethylene glycol monoethyl ether acetate.
No precipitate was deposited even after standing for 0 days. However, when the resist composition solutions using the photosensitive materials d and e of Comparative Examples were allowed to stand under the same conditions, precipitation was found in the resist composition. It was

[0044]

[Table 1]

[0045]

The positive photoresist using the photosensitive material of the present invention is excellent in resolution, sensitivity, developability and heat resistance and is suitable for use as a fine processing photoresist.

Claims (1)

[Claims] 1. A composition comprising a 1,2-naphthoquinonediazide-5- (and / or -4-) sulfonic acid ester of a polyhydroxy compound represented by the following general formula (I) and an alkali-soluble resin. A positive type photoresist composition. [Chemical 1]