JPH0559661A - Cloth structure and method for detecting its stitch - Google Patents

Abstract

(57) [Abstract] [Purpose] To provide a fabric structure that facilitates detection of the seam connecting the fabrics and a method capable of reliably detecting the seam. [Structure] An end portion of a strip-shaped fabric 4 is sewn together with a conductive thread 5 to form a seam 3. An electrode 1 and an electrode 2 are arranged so as to face the woven fabric 4, and a high frequency voltage is applied between the electrodes 1 and 2 by a controller 8.
In this state, the fabric 4 is moved in the arrow direction. Then, the electric field or the capacitance between the electrodes 1 and 2 changes, and the stitch 3 can be reliably detected based on the degree of change.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a seam detecting method for detecting a seam formed by stitching ends of a belt-shaped cloth and a cloth structure suitable for the seam detection.

[0002]

2. Description of the Related Art For example, when dyeing or drying a woven fabric, which is an example of a fabric, a single woven fabric is sewn together in the width direction to form a strip, and a continuous treatment process is carried out. In the case of detecting the seam, an optical detection device is conventionally used, for example. That is, the light transmitted through the running fabric is detected within a range of, for example, 10 to 20 mm in diameter, and the presence or absence of the seam is detected based on the change in the amount of transmitted light at this time. This is because the change in the amount of transmitted light when the seam passes through the detection range as described above (when the seam formed by joining the ends of the band-shaped fabric is passed, the amount of light increases due to the gap. , The amount of light decreases when the seam formed by overlapping the edges passes through).

[0003]

However, in the conventional detecting device as described above, the presence / absence of the seam is judged based on the change of the transmitted light amount in a relatively wide range. Therefore, for example, even in a part other than the seam. For fabrics with embroidery, etc., in which the amount of transmitted light greatly changes, there is not much relative change in the amount of transmitted light between when the seam passes through the detection range and in other cases. There was a problem that it caused erroneous detection. Therefore, an object of the present invention is to detect the position of the seam in such a cloth with high accuracy even when the size of the cloth is irregular, for example, in the case of a cloth having embroidery as described above. It is an object of the present invention to provide a possible seam detection method and a good cloth structure when implementing the seam detection method.

[0004]

In order to achieve the above object, the cloth structure according to the present invention is constituted mainly by the point that the ends of a belt-shaped cloth are sewn together with a conductive thread body. It is being done. Further, the stitch detecting method according to the present invention is a method for detecting stitches of a cloth structure formed by stitching the ends of a belt-shaped cloth with conductive threads, which is the first and second electrodes facing the cloth. A high-frequency voltage is applied between the first and second electrodes to move the cloth relative to the first and second electrodes, and an electric field between the first and second electrodes is disposed. The main element is that the seam is detected based on the degree of change of the above or the degree of change of the electrostatic capacity.

[0005]

[Function] When a cloth is run with a high-frequency voltage applied between the electrodes, since the sewn body of the cloth is a conductive thread, an electric field between the electrodes or The capacitance changes. By catching the change in the electric field or the capacitance, the position of the seam can be reliably detected.

[0006]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments embodying the present invention will be described below with reference to the accompanying drawings for the understanding of the present invention. The following embodiments are examples of embodying the present invention and are not of the nature to limit the technical scope of the present invention. Here, FIG. 1 is a block diagram of a detection device capable of performing the detection method when detecting a seam of a fabric structure according to an embodiment of the present invention, and FIG. 2 is a frequency and signal output in the seam detection device. FIG. 3 is a configuration diagram of a stitch detecting device according to another embodiment of the present invention. In the fabric structure according to this embodiment, as shown in FIG. 1, the ends of a plurality of strip-shaped fabrics 4, 4, ... As an example of the fabric are sewn together with a conductive thread 5 to form a seam 3. There is. Then, the fabric 4 having the above-mentioned cloth structure is moved and moved in the arrow direction by a moving mechanism (not shown). In this case, it is possible to use, for example, a metal thin wire of stainless steel, cobalt iron alloy, or the like as the conductive thread 5, but this metal thin wire has low bending resistance and is easily broken. There is a drawback that it requires special attention and is difficult to handle. Therefore, as the conductive thread 5, for example, a nylon thread, a tetron thread, or the like impregnated with carbon, a chemical plating or vapor deposition of nickel or the like, and a material impregnating or chemically plating copper sulfide or the like are used. Good.

An electrode 1 (first electrode) and electrodes 2, 2 (second electrode) are arranged on the upper surface side of the woven fabric 4 at appropriate intervals, and the electrodes 1 and 2, 2 are , Control device 8 including transmitter, microcomputer, memory, etc.
It is connected to the. In the seam detecting device configured as described above, when a high frequency voltage is applied between the electrodes 1 and 2 and the frequency is appropriately changed, for example, between 1 kHz and 10 GHz, the above-mentioned movement of the fabric 4 is caused. With a change in the electric field between the electrode 1 and the electrodes 2 and 2, for example, a signal output having a waveform as shown in FIG. 2 is obtained. That is, a resonance frequency of 950 MHz is obtained corresponding to the portion of the fabric 4, and a resonance frequency of 850 MHz is obtained corresponding to the portion of the seam 3. The position of the stitch 3 is accurately and reliably detected based on the degree of change in the value of the resonance frequency.
Further, from a different point of view, paying attention to the level change of the signal output corresponding to each resonance frequency, since the value is attenuated by 10 db, this attenuation degree causes the stitch 3
It is also possible to detect the position of.

When the position of the seam 3 is to be detected by the degree of attenuation of the signal output level, the frequency of the high frequency voltage is maintained at a predetermined value without being changed, and It is also possible to detect the position of the stitch 3 based on the degree of attenuation of the signal output relative to the portion of the stitch 3. In the seam detection device, as described above, the seam 3 is detected based on the degree of change in the electric field between the electrodes (the same applies when the seam is detected based on the degree of change in capacitance described below). , As described above, in the case of a material having a high specific electric conductivity made of a material other than a thin metal wire (for example, when nylon or tetron is impregnated with carbon, the specific electric conductivity is about 10 ² to 10 ^-3 m cm, , In the detection device, preferably 10
Even if it is ^-1 to 10 ^-3 mho), the position of the seam 3 can be reliably detected. As for the frequency of the high-frequency voltage, when the fabric 4 is adhered with, for example, an ionic aqueous solution or the like, setting it to a high value of, for example, 200 MHz or more reduces malfunctions due to ions and further improves detection accuracy. be able to. FIG. 3 shows the configuration of another detection device capable of implementing the stitch detection method according to the present invention.

In the seam detecting device according to this embodiment, as shown in the figure, the electrode 1 and the electrode 2 are arranged opposite to each other with the running fabric 4 having the seam 3 interposed therebetween. The electrodes 1 and 2 form a bridge circuit 6, and the bridge circuit 6 is loaded with a high-frequency voltage having a frequency of 1 MHz, for example. Then, the change of the electrostatic capacitance due to the running of the fabric 4,
That is, the position of the stitch 3 is detected from the unbalanced state of the bridge circuit. Also in the detection device, the position of the seam 3 in the fabric 4 can be reliably detected as in the case of the above-described embodiment device. In this case, the electrodes 1 and 2 may be arranged side by side on one side with respect to the surface of the fabric 4. Since the seam 3 in each of the above-mentioned embodiments has conductivity as described above, it is used as a marking for each fabric, and is used as a device for indirectly determining the type of each fabric in the device. You can also

[0010]

As described above, the present invention is characterized in that the end portions of the band-shaped cloth are sewn together with the conductive thread body and the end portions of the band-shaped cloth are made conductive. In a method for detecting a seam in a cloth structure formed by stitching with a thread, the first and second electrodes are arranged so as to face the cloth,
By applying a high frequency voltage between the first and second electrodes,
The cloth is moved relative to the second electrode, and the stitch is detected based on the degree of change in the electric field or the degree of change in capacitance between the first and second electrodes. Since the seam detecting method is used, the position of the seam can be reliably detected regardless of the amount of transmitted light related to the cloth and the space between the seams. Therefore, even if the size of the weave is irregular, as in the case of a fabric having embroidery or the like as described above, the position of the seam in the fabric can be detected with high accuracy and reliability.

[Brief description of drawings]

FIG. 1 is a configuration diagram of a detection device capable of performing a detection method when detecting a seam of a cloth structure according to an embodiment of the present invention.

FIG. 2 is a graph showing the relationship between frequency and signal output in the stitch detecting device.

FIG. 3 is a configuration diagram of a seam detection device according to another embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Electrode (1st electrode) 2 ... Electrode (2nd electrode) 3 ... Seam 4 ... Woven fabric 5 ... Conductive thread 6 ... Bridge circuit 8 ... Control device

Claims (2)

[Claims] 1. A cloth structure, characterized in that the ends of a band-shaped cloth are sewn together by a thread body having conductivity. 2. A method for detecting a seam in a cloth structure formed by stitching the ends of a band-shaped cloth with conductive threads, wherein first and second electrodes are arranged facing the cloth, A high frequency voltage is applied between the first and second electrodes to move the cloth relative to the first and second electrodes,
A stitch detecting method, characterized in that the stitch is detected based on a degree of change of an electric field or a degree of change of capacitance between electrodes.