JPH0567599A - Manufacture of semiconductor device - Google Patents

Abstract

(57) [Summary] [Purpose] Excludes damaged parts such as chips and cracks that occur when cutting semiconductor devices from wear. [Structure] After cutting out a semiconductor device, a damaged portion of a cut surface is removed by mechanical polishing. [Effect] The adhesive force with the package and the chip strength are increased, and the chip is strengthened against various stresses, and reliability of quality and long life can be achieved.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of cutting each semiconductor device from a wafer on which a semiconductor device is formed.

[0002]

2. Description of the Related Art FIGS. 2A and 2B are views showing a conventional method for cutting a semiconductor device from a wafer. In the figure, 1 is a semiconductor substrate in a wafer state on which a plurality of semiconductor devices (3a, 3b, 3c, ...) Are formed, and 4 is a semiconductor device (3a, 3c).
b), 3c, ...) Are cut from the wafer 1 by dicing saws 5 are grooves cut by the dicing saw 4.

Next, a method of cutting a semiconductor device from a wafer will be described. Semiconductor devices (3a, 3b, 3c,
..) are formed in a groove shape between the semiconductor devices by a dicing saw 4 or the like.

The semiconductor devices (3a, 3b, 3c, ...) Are cut off by digging deeply until the groove 5 on the cut surface is completely cut, or after halfway digging, the wafer 1 is divided along the groove 5. Made by The thus-divided semiconductor devices are mounted in a package.

[0005]

Since the conventional semiconductor device is cut as described above, the semiconductor device cut by the dicing saw is liable to be damaged around the cut surface thereof, and cracks or breaks easily occur.

FIG. 3 is a partial cross-sectional view of the joint between the semiconductor device 3 and the package 7. 9 is a chip or a crack generated during cutting. In particular, the semiconductor device 3 and the package 7 are shown in FIG.
In the case where the semiconductor device 3 is bonded as shown in FIG. 2, chipping or cracking in the peripheral portion of the semiconductor device 3 causes a decrease in adhesive force and chip strength, and when stress such as heat cycle, vibration, or shock is applied, Peeling or destruction occurs.

The present invention has been made to solve the above problems, and an object of the present invention is to obtain a method of manufacturing a semiconductor device capable of eliminating cracks and cracks generated during cutting.

[0008]

According to the method of manufacturing a semiconductor device of the present invention, after the semiconductor device is cut out from the wear, the damaged portion of the cut surface of the chip is mechanically polished, whereby a dicing saw or the like is used. This is designed to remove the damaged portion of the cut surface generated when cutting.

[0009]

According to the method of manufacturing the semiconductor device of the present invention,
By removing the damaged part of the cut surface by mechanical polishing, chipping and cracks are eliminated, the adhesive strength with the package and the chip strength are increased, and the life is long against repeated stress such as heat cycle, vibration and impact. Can be realized.

[0010]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. 1 (a), 1 (b) and 1 (c) show a method of manufacturing a semiconductor device according to an embodiment of the present invention, and FIGS.
Same as (a) and (b). In FIG. 1, 1 is a semiconductor substrate in a wafer state in which a plurality of semiconductor devices are formed, 2 is a protective film formed on the front and back surfaces of the semiconductor device, 3a, 3
b and 3c are semiconductor device chips, 5 is a dicing saw 4
Is a groove dug by, and 6 is a polishing device.

Next, the manufacturing method thereof will be described. First, protective films are provided on both surfaces of the semiconductor substrate 1 on which the semiconductor device is formed according to the conventional method, and then the semiconductor device (3a, 3a
The protective film of the cut portion (dicing line) between the portions (b, 3c) is removed (FIG. 1 (a)). Next, the dicing line is dug in a groove shape with the dicing saw 4. Semiconductor device (3a, 3
b, 3c) is cut off by completely cutting the groove 5 on the cut surface or by digging to a proper depth and then dividing the wafer 1 along the groove (FIG. 1 (b)). Then, the individually divided chips 3 are mechanically polished by a polishing device 6 to remove the damaged portion generated around the cut surface at the time of cutting (FIGS. 1C and 1D), and then mounted in a package.

In this embodiment, since the damaged portion generated at the time of separating the chip is removed by mechanical polishing, chipping and cracks around the chip are eliminated, and the adhesive force with the package and the chip strength are increased. However, it is possible to prolong the service life against repeated stress such as heat cycle, vibration, and shock. Although a dicing saw is used for cutting the semiconductor device in the above embodiment, other means such as laser cutting or ultrasonic cutting may be used.

[0013]

As described above, according to the present invention, since the damaged portion generated at the time of separating the chip is removed by mechanical polishing, chipping and cracks around the chip are eliminated and the adhesive force to the package is improved. It also has the effect of increasing the chip strength and prolonging the service life against repeated stress such as heat cycle, vibration and shock.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a manufacturing process of a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view showing a step of cutting a conventional semiconductor device from a wafer.

FIG. 3 is a partial cross-sectional view of a junction between a semiconductor device and a package according to a conventional method.

[Explanation of symbols] 1 semiconductor substrate 2 protective film 3 semiconductor device 4 dancing saw 5 cut groove 6 polishing device 7 package 8 adhesive 9 chip, crack

Claims (1)

[Claims] 1. A semiconductor device comprising: a step of cutting out a plurality of semiconductor devices formed on a semiconductor substrate; and a step of removing a damaged portion of a cut surface of the semiconductor device by mechanical polishing. Production method.