JPH06107579A - Method for producing bisphenol A - Google Patents
Method for producing bisphenol AInfo
- Publication number
- JPH06107579A JPH06107579A JP28348192A JP28348192A JPH06107579A JP H06107579 A JPH06107579 A JP H06107579A JP 28348192 A JP28348192 A JP 28348192A JP 28348192 A JP28348192 A JP 28348192A JP H06107579 A JPH06107579 A JP H06107579A
- Authority
- JP
- Japan
- Prior art keywords
- bisphenol
- phenol
- thin film
- film evaporator
- centrifugal thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
(57)【要約】
【目的】 遠心薄膜蒸発器を使用し、ビスフェノールA
とフェノールとの付加物又は混合物からフェノールを蒸
発除去し、長期間安定して高純度のビスフェノールAを
製造することができるビスフェノールAの製造方法を提
供する。
【構成】 ビスフェノールAとフェノールとの付加物又
は混合物を遠心薄膜蒸発器に装入してビスフェノールA
を分離回収するに際し、このビスフェノールAとフェノ
ールとの付加物又は混合物をフラッシュ蒸発器に装入し
てフェノール分4重量%以下に調整し、次いで遠心薄膜
蒸発器に装入してビスフェノールAを分離回収するビス
フェノールAの製造方法である。
(57) [Summary] [Purpose] Using a centrifugal thin film evaporator, bisphenol A
Provided is a method for producing bisphenol A, which is capable of stably producing high-purity bisphenol A for a long period of time by evaporating and removing phenol from an adduct or a mixture of phenol and phenol. [Composition] Addition or mixture of bisphenol A and phenol was charged into a centrifugal thin film evaporator, and bisphenol A was added.
When separating and recovering the bisphenol A, the adduct or mixture of bisphenol A and phenol is charged into a flash evaporator to adjust the phenol content to 4% by weight or less, and then charged into a centrifugal thin film evaporator to separate the bisphenol A. It is a method for producing bisphenol A to be recovered.
Description
【0001】[0001]
【産業上の利用分野】この発明は、ビスフェノールAの
製造方法に係り、詳しくは、ビスフェノールAとフェノ
ールとの付加物又は混合物からフェノールを除去して高
純度のビスフェノールAを製造する方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing bisphenol A, and more particularly to a method for producing high-purity bisphenol A by removing phenol from an adduct or mixture of bisphenol A and phenol.
【0002】[0002]
【従来の技術】ビスフェノールA、すなわち2,2−ビ
ス(4−ヒドロキシフェニル)プロパンは、常温固体の
化合物であって、酸性触媒の存在下にアセトンと過剰の
フェノールとを反応させることにより製造されている。
この反応によって得られる反応混合物は、目的物のビス
フェノールAのほかに触媒、未反応フェノール、未反応
アセトン、反応生成水及びその他の反応副生物等の不純
物を含んでおり、その後処理工程でこれらの不純物を分
離除去する必要がある。そして、この反応混合物からビ
スフェノールAを回収する方法の1つとして、反応混合
物から触媒や必要により水を除去したのち、得られた液
状混合物を冷却してビスフェノールAとフェノールとの
付加物の結晶を析出せしめ、この付加物結晶を含むスラ
リーから母液を分離除去し、次いで得られた付加物結晶
を脱フェノール処理して目的のビスフェノールAを回収
する方法がある。BACKGROUND OF THE INVENTION Bisphenol A, 2,2-bis (4-hydroxyphenyl) propane, is a compound that is solid at room temperature and is produced by reacting acetone with excess phenol in the presence of an acidic catalyst. ing.
The reaction mixture obtained by this reaction contains impurities such as a catalyst, unreacted phenol, unreacted acetone, reaction product water and other reaction by-products in addition to the target bisphenol A. Impurities need to be separated and removed. Then, as one of the methods for recovering bisphenol A from this reaction mixture, after removing the catalyst and water if necessary from the reaction mixture, the obtained liquid mixture is cooled to form crystals of an adduct of bisphenol A and phenol. There is a method of precipitating, separating and removing the mother liquor from the slurry containing the adduct crystals, and then dephenolizing the adduct crystals thus obtained to recover the target bisphenol A.
【0003】ここで行うビスフェノールAとフェノール
との付加物又は混合物の脱フェノール処理の方法として
は、減圧蒸溜法や水蒸気ストリッピング法(例えば、特
開昭63−132,850号や特開平2−28,126
号公報等)があるが、比較的高純度のビスフェノールA
を製造し得ることから、遠心薄膜蒸発器を使用する方法
(特開平3−95,135号公報)も提案されている。
この遠心薄膜蒸発器を使用する方法は、被処理物が高温
に長時間さらされることがなく、ビスフェノールAの分
解や着色を最小限に抑えることができ、得られたビスフ
ェノールAの色相が優れているという利点はあるが、反
面、運転中に結晶が析出し、胴体内に可動部を有する遠
心薄膜蒸発器ではその運転を長期間に亘って安定的に行
うのが困難であるという問題が見出された。As the method for dephenolizing the adduct or mixture of bisphenol A and phenol to be carried out here, a vacuum distillation method or a steam stripping method (for example, JP-A-63-132,850 or JP-A-2- 28,126
), But relatively high-purity bisphenol A
Therefore, a method using a centrifugal thin film evaporator (Japanese Patent Laid-Open No. 3-95,135) has also been proposed.
This method using a centrifugal thin film evaporator is capable of minimizing the decomposition and coloration of bisphenol A without exposing the treated material to high temperature for a long time, and the hue of the obtained bisphenol A is excellent. However, on the other hand, there is a problem that crystals are precipitated during operation, and it is difficult for a centrifugal thin-film evaporator having a movable part inside the body to operate stably for a long period of time. Was issued.
【0004】[0004]
【発明が解決しようとする課題】そこで、本発明者ら
は、このように遠心薄膜蒸発器を長期間に亘って安定的
に運転出来ない原因について検討した結果、従来におい
ては専ら残留フェノールの低減に主眼がおかれ、この遠
心薄膜蒸発器の運転を30トル以下の高真空下で行って
いたため、30重量%以上のフェノールを含む付加物又
は混合物がこの遠心薄膜蒸発器内に導入されると、この
フェノールが短時間で多量に蒸発し、その際に多量の蒸
発潜熱が奪われて処理液の温度が急速に低下し、残存フ
ェノールと液温との関係でビスフェノールAの結晶が析
出し、これが遠心薄膜蒸発器を長期間安定に運転する際
の障害になることを突き止めた。特に、このビスフェノ
ールAの結晶の析出が遠心薄膜蒸発器の装入部で発生す
ると、遠心薄膜蒸発器の回転部に結晶が付着し、回転が
アンバランスになり、また、遠心薄膜蒸発器自体に振動
又は遠心力が生じて安定した運転が不可能になる。ま
た、この結晶の析出が遠心薄膜蒸発器の蒸発部で発生す
ると、遠心薄膜蒸発器の回転翼と胴体との間に結晶が噛
み込まれ、モーターに異常な力が働いて安定した運転が
不可能になる。Therefore, as a result of studying the reason why the centrifugal thin film evaporator cannot be stably operated for a long period of time in this way, as a result, in the past, the residual phenol was reduced exclusively. Since the operation of this centrifugal thin film evaporator was performed under a high vacuum of 30 torr or less, when an additive or mixture containing 30% by weight or more of phenol was introduced into this centrifugal thin film evaporator. A large amount of this phenol evaporates in a short time, a large amount of latent heat of vaporization is taken away at that time, the temperature of the treatment liquid rapidly decreases, and crystals of bisphenol A precipitate due to the relationship between the residual phenol and the liquid temperature. We have found that this hinders the stable operation of the centrifugal thin film evaporator for a long period of time. Especially, when the precipitation of the bisphenol A crystals occurs in the charging part of the centrifugal thin film evaporator, the crystals adhere to the rotating part of the centrifugal thin film evaporator, the rotation becomes unbalanced, and the centrifugal thin film evaporator itself is Vibration or centrifugal force occurs and stable operation becomes impossible. Further, if this crystal precipitation occurs in the evaporation part of the centrifugal thin film evaporator, the crystal is caught between the rotor and the body of the centrifugal thin film evaporator, and abnormal force acts on the motor to make stable operation impossible. It will be possible.
【0005】そして、この問題を解消するための方法と
しては、付加物又は混合物を遠心薄膜蒸発器へ装入する
際の温度を低くし、残存エノール中にビスフェノールA
を溶解させることが考えられるが、この方法では装入部
での結晶の析出は効果的に抑制できるが、その後に蒸発
部でフェノールが蒸発して行く際に残存フェノールの量
と液温度との関係で結晶が析出する。また、他の方法と
して、遠心薄膜蒸発器での真空度を落とすことによりフ
ェノールの急速な蒸発を抑えて結晶の析出を防止するこ
とも可能であるが、真空度の低下により製品のビスフノ
ールA中への残存フェノールが約4重量%程度にまで上
昇してしまい、高純度のビスフノールAを製造するため
には後段により高真空の遠心薄膜蒸発器による処理工程
を設ける必要が生じる。As a method for solving this problem, the temperature at which the adduct or the mixture is charged into the centrifugal thin film evaporator is lowered so that bisphenol A is contained in the residual enol.
Although it can be considered that this method is effective, the precipitation of crystals in the charging part can be effectively suppressed by this method, but when the phenol evaporates in the evaporation part after that, the amount of residual phenol and the liquid temperature Because of this, crystals will precipitate. As another method, it is possible to prevent the precipitation of crystals by suppressing the rapid evaporation of phenol by lowering the degree of vacuum in the centrifugal thin film evaporator. The amount of residual phenol is increased to about 4% by weight, and in order to produce high-purity bisfunol A, it is necessary to provide a treatment step with a high-vacuum centrifugal thin-film evaporator in a subsequent stage.
【0006】本発明者らは、遠心薄膜蒸発器を使用する
方法におけるこのような問題を解決すべく鋭意研究を重
ねた結果、ビスフェノールAとフェノールとの付加物又
は混合物を遠心薄膜蒸発器に装入する際に、予めフラッ
シュ蒸発器に使用してこの付加物又は混合物のフェノー
ル分を4重量%以下にまで調整することにより、上述し
た遠心薄膜蒸発器での問題を解決することができること
を見出し、本発明を完成した。従って、本発明の目的
は、遠心薄膜蒸発器を使用し、ビスフェノールAとフェ
ノールとの付加物又は混合物からフェノールを蒸発除去
し、長期間安定して高純度のビスフェノールAを製造す
ることができるビスフェノールAの製造方法を提供する
ことにある。As a result of intensive studies to solve such problems in the method using a centrifugal thin film evaporator, the present inventors have installed an additive or mixture of bisphenol A and phenol in the centrifugal thin film evaporator. It was found that the problems with the centrifugal thin-film evaporator described above can be solved by using a flash evaporator in advance to adjust the phenol content of the adduct or mixture to 4% by weight or less before entering. The present invention has been completed. Therefore, an object of the present invention is to use a centrifugal thin film evaporator to evaporate and remove phenol from an adduct or a mixture of bisphenol A and phenol, and to stably produce high-purity bisphenol A for a long period of time. It is to provide a manufacturing method of A.
【0007】[0007]
【課題を解決するための手段】すなわち、本発明は、ビ
スフェノールAとフェノールとの付加物又は混合物を遠
心薄膜蒸発器に装入してビスフェノールAを分離回収す
るに際し、このビスフェノールAとフェノールとの付加
物又は混合物をフラッシュ蒸発器に装入してフェノール
分4重量%以下に調整し、次いで遠心薄膜蒸発器に装入
してビスフェノールAを分離回収するビスフェノールA
の製造方法である。That is, according to the present invention, when an adduct or a mixture of bisphenol A and phenol is charged into a centrifugal thin film evaporator to separate and recover bisphenol A, the bisphenol A and the phenol are mixed with each other. Bisphenol A for charging the adduct or mixture to a flash evaporator to adjust the phenol content to 4% by weight or less, and then charging to a centrifugal thin film evaporator to separate and recover bisphenol A.
Is a manufacturing method.
【0008】本発明において、ビスフェノールAとフェ
ノールとの付加物は、酸性触媒の存在下にアセトンと過
剰のフェノールとを反応させて得られた反応混合物を、
必要により低沸点物質の除去や、触媒除去等を行ったの
ち、得られた液状混合物を冷却してビスフェノールAと
フェノールとの付加物の結晶を析出せしめ、この付加物
結晶を含むスラリーから母液を除去して得られるもので
あり、好ましくは更にフェノールで再結晶したり、洗浄
して不純物のほとんどを除去したものである。この付加
物については、高純度のビスフェノールAを得る上で、
できるだけ高純度のものであることが望ましい。このビ
スフェノールAとフェノールとの付加物又は混合物は、
通常、フェノールを30〜40重量%程度含んでいる。In the present invention, the adduct of bisphenol A and phenol is a reaction mixture obtained by reacting acetone with excess phenol in the presence of an acidic catalyst,
After removing the low-boiling substance and the catalyst as necessary, the obtained liquid mixture is cooled to precipitate the adduct crystals of bisphenol A and phenol, and the mother liquor is extracted from the slurry containing the adduct crystals. It is obtained by removal, and is preferably one obtained by further recrystallizing with phenol or washing to remove most of the impurities. Regarding this adduct, in order to obtain high-purity bisphenol A,
It is desirable that the purity is as high as possible. The adduct or mixture of bisphenol A and phenol is
Usually, it contains about 30 to 40% by weight of phenol.
【0009】本発明方法においては、このようなビスフ
ェノールAとフェノールとの付加物又は混合物を一旦フ
ラッシュ蒸発器に装入し、フェノール分が4重量%以下
となるように調整する。このフェノール分については、
4重量%以下であれば下限はないが、フェノールの除去
率が遠心薄膜蒸発器に比べて圧倒的に低いので、このフ
ラッシュ蒸発器では2〜4重量%程度に留め、所望の残
存フェノール濃度までのフエノールの除去は次の遠心薄
膜蒸発器で行うのがよい。このフラッシュ蒸発器出のフ
ェノール分が4重量%を越えると、長期間に亘って安定
的に遠心薄膜蒸発器による脱フェノール操作を行うのが
難しくなる。このフラッシュ蒸発器は、温度160℃以
上であって残存フェノールを4重量%以下に維持できる
平衡圧力を保って運転され、好ましくはビスフェノール
Aの熱分解や着色等を防止するために、220℃以下、
より好ましくは195℃以下の温度で運転される。In the method of the present invention, such an adduct or mixture of bisphenol A and phenol is once charged into a flash evaporator and adjusted so that the phenol content is 4% by weight or less. For this phenol content,
There is no lower limit as long as it is 4% by weight or less, but the removal rate of phenol is far lower than that of the centrifugal thin film evaporator, so in this flash evaporator, keep it at about 2 to 4% by weight until the desired residual phenol concentration is reached. The removal of the phenol is preferably performed by the following centrifugal thin film evaporator. When the phenol content of the flash evaporator exceeds 4% by weight, it becomes difficult to stably perform the dephenoling operation by the centrifugal thin film evaporator for a long period of time. This flash evaporator is operated at a temperature of 160 ° C or higher and at an equilibrium pressure capable of maintaining residual phenol at 4% by weight or less, and preferably 220 ° C or lower in order to prevent thermal decomposition or coloring of bisphenol A. ,
More preferably, it is operated at a temperature of 195 ° C or lower.
【0010】このようにして得られたフェノール分4重
量%以下のビスフェノールAは、次に遠心薄膜蒸発器に
装入して高純度のビスフェノールAを分離回収する。こ
の遠心薄膜蒸発器は、真空度30トル以下、好ましくは
15トル以下の高真空に維持し、ジャケット等により約
170〜220℃、好ましくは170〜195℃に加熱
し、残存フェノールが50ppm以下になるまで除去さ
れる。The bisphenol A having a phenol content of 4% by weight or less thus obtained is then charged into a centrifugal thin film evaporator to separate and collect high-purity bisphenol A. This centrifugal thin film evaporator is maintained at a high vacuum with a degree of vacuum of 30 torr or less, preferably 15 torr or less, and is heated to about 170 to 220 ° C., preferably 170 to 195 ° C. by a jacket or the like so that residual phenol is 50 ppm or less. Will be removed until
【0011】ここで、図1に基づいて、本発明方法で使
用されるフラッシュ蒸発器及び遠心薄膜蒸発器の一例を
説明する。図1において、フラッシュ蒸発器1は胴体1
a、原料装入ライン1b、循環ポンプ1c、加熱器1d
及び蒸気出口ライン1eを備え、また、遠心薄膜蒸発器
2は胴体2a、液装入ライン2b、蒸気出口ライン2c
及び液出口ライン2dを備えている。遠心薄膜蒸発器2
の胴体2aの内部には、回転翼が胴体2aの内壁に近接
して回転するように設けられており、また、蒸気出口ラ
イン1e、2cは真空系と接続されており、更に、遠心
薄膜蒸発器2は必要により複数連続して設けることがで
きる。An example of a flash evaporator and a centrifugal thin film evaporator used in the method of the present invention will now be described with reference to FIG. In FIG. 1, the flash evaporator 1 is a body 1
a, raw material charging line 1b, circulation pump 1c, heater 1d
And a vapor outlet line 1e, and the centrifugal thin film evaporator 2 includes a body 2a, a liquid charging line 2b, and a vapor outlet line 2c.
And a liquid outlet line 2d. Centrifugal thin film evaporator 2
Inside the body 2a, a rotary blade is provided so as to rotate close to the inner wall of the body 2a, and the vapor outlet lines 1e and 2c are connected to a vacuum system. If necessary, a plurality of containers 2 can be continuously provided.
【0012】[0012]
【作用】本発明方法によれば、フェノール分30重量%
以上のビスフェノールAとフェノールとの付加物又は混
合物が30トル以下の高真空下で運転される遠心薄膜蒸
発器に直接装入されることがなく、予めフェノール分4
重量%以下にまで調整されてから装入されるので、遠心
薄膜蒸発器内で短時間のうちにフェノールが多量に蒸発
し、多量の蒸発潜熱が奪われて処理液の温度が急速に低
下し、残存フェノールと液温との関係でビスフェノール
Aの結晶が析出し、遠心薄膜蒸発器の長期間の安定運転
が阻害されるようなことがない。According to the method of the present invention, the phenol content is 30% by weight.
The above-mentioned adduct or mixture of bisphenol A and phenol is not directly charged into a centrifugal thin film evaporator operated under a high vacuum of 30 Torr or less, and a phenol content of 4
Since it is charged after adjusting to less than 5% by weight, a large amount of phenol evaporates in a short time in the centrifugal thin film evaporator, a large amount of latent heat of vaporization is taken away, and the temperature of the processing liquid drops rapidly. The bisphenol A crystals do not precipitate due to the relationship between the residual phenol and the liquid temperature, and the long-term stable operation of the centrifugal thin film evaporator is not hindered.
【0013】[0013]
【実施例】以下、実施例及び比較例に基づいて、本発明
方法を具体的に説明する。EXAMPLES The method of the present invention will be specifically described below based on Examples and Comparative Examples.
【0014】実施例1 図1に示すようなフラッシュ蒸発器及び遠心薄膜蒸発器
において、ビスフェノールA70重量%及びフェノール
30重量%からなるビスフェノールAとフェノールとの
付加物又は混合物を150℃に予熱し、原料装入ライン
1bから温度165℃で圧力50トルに保持したフラッ
シュ蒸発器1の胴体1aに装入した。このとき、フラッ
シュ蒸発器1を出て遠心薄膜蒸発器2の液装入ライン2
bから胴体2a内に装入されたビスフェノールA中のフ
ェノール分は3.8重量%であった。また、遠心薄膜蒸
発器2は、図示外のジャケット中を循環する蒸気によっ
て200℃に加熱され、また、圧力10トルに保持され
た。Example 1 In a flash evaporator and a centrifugal thin film evaporator as shown in FIG. 1, an adduct or mixture of bisphenol A and phenol consisting of 70% by weight of bisphenol A and 30% by weight of phenol was preheated to 150 ° C. The raw material charging line 1b was charged into the body 1a of the flash evaporator 1 maintained at a temperature of 165 ° C. and a pressure of 50 torr. At this time, the flash evaporator 1 is discharged and the liquid charging line 2 of the centrifugal thin film evaporator 2 is discharged.
The phenol content in bisphenol A charged into the body 2a from b was 3.8% by weight. The centrifugal thin film evaporator 2 was heated to 200 ° C. by the steam circulating in the jacket (not shown) and kept at a pressure of 10 torr.
【0015】このような条件でフラッシュ蒸発器1及び
遠心薄膜蒸発器2が運転され、遠心薄膜蒸発器2の液出
口ライン2dからフェノール濃度35ppmのビスフェ
ノールAが回収された。この条件でフラッシュ蒸発器1
及び遠心薄膜蒸発器2が30日間運転されたが、その
間、振動、遠心力の発生、モーターの過負荷等の異常現
象は全く観察されず、安定した運転ができた。The flash evaporator 1 and the centrifugal thin film evaporator 2 were operated under such conditions, and bisphenol A having a phenol concentration of 35 ppm was recovered from the liquid outlet line 2d of the centrifugal thin film evaporator 2. Flash evaporator 1 under these conditions
The centrifugal thin film evaporator 2 was operated for 30 days, and during that period, abnormal phenomena such as vibration, generation of centrifugal force, and overload of the motor were not observed at all, and stable operation was possible.
【0016】比較例1 フラッシュ蒸発器1の保持圧力を70トルとし、このフ
ラッシュ蒸発器1を出て遠心薄膜蒸発器2の液装入ライ
ン2bから胴体2a内に装入されたビスフェノールA中
のフェノール分が5.1重量%であった以外は、実施例
1と同様に運転し、遠心薄膜蒸発器2の液出口ライン2
dからビスフェノールAを回収した。得られたビスフェ
ノールAのフェノール濃度は120ppmであり、5日
目には遠心薄膜蒸発器2に振動や遠心力の発生が起こ
り、安定運転ができなくなった。Comparative Example 1 The holding pressure of the flash evaporator 1 was set to 70 Torr, and the flash evaporator 1 was discharged from the liquid charging line 2b of the centrifugal thin film evaporator 2 into the body 2a. The liquid outlet line 2 of the centrifugal thin film evaporator 2 was operated in the same manner as in Example 1 except that the phenol content was 5.1% by weight.
Bisphenol A was recovered from d. The phenol concentration of the obtained bisphenol A was 120 ppm, and vibration and centrifugal force occurred in the centrifugal thin film evaporator 2 on the 5th day, which made stable operation impossible.
【0017】比較例2 フラッシュ蒸発器1の保持圧力を100トルとし、この
フラッシュ蒸発器1を出て遠心薄膜蒸発器2の液装入ラ
イン2bから胴体2a内に装入されたビスフェノールA
中のフェノール分が10.0重量%であり、遠心薄膜蒸
発器2の保持圧力を60トルとした以外は、実施例1と
同様に運転し、遠心薄膜蒸発器2の液出口ライン2dか
らビスフェノールAを回収した。この条件でフラッシュ
蒸発器1及び遠心薄膜蒸発器2が30日間運転され、そ
の間に、振動、遠心力の発生、モーターの過負荷等の異
常現象は観察されなかったが、得られたビスフェノール
Aのフェノール濃度は5,800ppmもあり、目標の
200ppm以下には達しなかった。COMPARATIVE EXAMPLE 2 The holding pressure of the flash evaporator 1 was set to 100 torr, and the bisphenol A charged in the body 2a from the liquid charging line 2b of the centrifugal thin film evaporator 2 after exiting the flash evaporator 1 was used.
The content of phenol was 10.0% by weight, and the operation was performed in the same manner as in Example 1 except that the holding pressure of the centrifugal thin film evaporator 2 was set to 60 Torr, and the bisphenol was discharged from the liquid outlet line 2d of the centrifugal thin film evaporator 2. A was collected. Under these conditions, the flash evaporator 1 and the centrifugal thin film evaporator 2 were operated for 30 days, during which no abnormal phenomena such as vibration, generation of centrifugal force, motor overload, etc. were observed. The phenol concentration was as high as 5,800 ppm and did not reach the target of 200 ppm or less.
【0018】[0018]
【発明の効果】本発明によれば、遠心薄膜蒸発器を使用
し、ビスフェノールAとフェノールとの付加物又は混合
物から長期間安定して高純度のビスフェノールAを製造
することができる。According to the present invention, a high-purity bisphenol A can be stably produced for a long time from an adduct or a mixture of bisphenol A and phenol by using a centrifugal thin film evaporator.
【図1】 図1は、本発明の実施例に係るフラッシュ蒸
発器及び遠心薄膜蒸発器を示すフローチャートである。FIG. 1 is a flowchart showing a flash evaporator and a centrifugal thin film evaporator according to an embodiment of the present invention.
1…フラッシュ蒸発器、1a…胴体、1b…原料装入ラ
イン、1c…循環ポンプ、1d…加熱器、1e…蒸気出
口ライン、2…遠心薄膜蒸発器、2a…胴体、2b…液
装入ライン、2c…蒸気出口ライン、2d…液出口ライ
ン。DESCRIPTION OF SYMBOLS 1 ... Flash evaporator, 1a ... Body, 1b ... Raw material charging line, 1c ... Circulation pump, 1d ... Heater, 1e ... Steam outlet line, 2 ... Centrifugal thin film evaporator, 2a ... Body, 2b ... Liquid charging line 2c ... Steam outlet line, 2d ... Liquid outlet line.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 須田 信幸 神奈川県横浜市鶴見区鶴見中央二丁目12番 1号、千代田化工建設株式会社内 (72)発明者 植村 文彦 神奈川県横浜市鶴見区鶴見中央二丁目12番 1号、千代田化工建設株式会社内 (72)発明者 香崎 武志 神奈川県横浜市鶴見区鶴見中央二丁目12番 1号、千代田化工建設株式会社内 (72)発明者 古川 俊彦 福岡県北九州市小倉北区白萩町2番14− 301号 (72)発明者 古賀 洋征 福岡県中間市桜台1丁目6−5 (72)発明者 丸山 利和 福岡県北九州市小倉北区中井2丁目4−3 −201 (72)発明者 江頭 史明 福岡県北九州市八幡西区千代2丁目3番21 号 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Nobuyuki Suda 2-12-1, Tsurumi Chuo, Tsurumi-ku, Yokohama-shi, Kanagawa, Chiyoda Kakoh Construction Co., Ltd. (72) Fumihiko Uemura Tsurumi-chuo, Tsurumi-ku, Yokohama-shi, Kanagawa 2-12-1, Chiyoda Kakoh Construction Co., Ltd. (72) Inventor Takeshi Kazaki 2-12-1, Tsurumi Chuo, Tsurumi-ku, Yokohama-shi, Kanagawa Prefecture Chiyoda Kakoh Construction Co., Ltd. (72) Inventor Toshihiko Furukawa Fukuoka 2-14-301, Shirahagi-cho, Kokurakita-ku, Kitakyushu, Japan (72) Inventor, Yosei Koga 1-6-5, Sakuradai, Naka-city, Fukuoka Prefecture (72) Toshikazu Maruyama, 2-chome, Nakai-ku, Kitakyushu, Fukuoka Prefecture 3-201 (72) Inventor Fumiaki Egashira 2-3-21 Chiyo, Yawatanishi-ku, Kitakyushu, Fukuoka
Claims (1)
物又は混合物を遠心薄膜蒸発器に装入してビスフェノー
ルAを分離回収するに際し、このビスフェノールAとフ
ェノールとの付加物又は混合物をフラッシュ蒸発器に装
入してフェノール分4重量%以下に調整し、次いで遠心
薄膜蒸発器に装入してビスフェノールAを分離回収する
ことを特徴とするビスフェノールAの製造方法。1. When the adduct or mixture of bisphenol A and phenol is charged into a centrifugal thin film evaporator to separate and recover bisphenol A, the adduct or mixture of bisphenol A and phenol is installed in a flash evaporator. A method for producing bisphenol A, which comprises charging and adjusting the phenol content to 4% by weight or less, and then charging into a centrifugal thin film evaporator to separate and recover bisphenol A.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28348192A JP3294339B2 (en) | 1992-09-30 | 1992-09-30 | Method for producing bisphenol A |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28348192A JP3294339B2 (en) | 1992-09-30 | 1992-09-30 | Method for producing bisphenol A |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06107579A true JPH06107579A (en) | 1994-04-19 |
| JP3294339B2 JP3294339B2 (en) | 2002-06-24 |
Family
ID=17666108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28348192A Expired - Lifetime JP3294339B2 (en) | 1992-09-30 | 1992-09-30 | Method for producing bisphenol A |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3294339B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001053238A1 (en) * | 2000-01-18 | 2001-07-26 | Idemitsu Petrochemical Co., Ltd. | Process for producing bisphenol a |
| WO2004014828A1 (en) * | 2002-08-08 | 2004-02-19 | Mitsubishi Chemical Corporation | Method of purifying bisphenol a containing phenol |
-
1992
- 1992-09-30 JP JP28348192A patent/JP3294339B2/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001053238A1 (en) * | 2000-01-18 | 2001-07-26 | Idemitsu Petrochemical Co., Ltd. | Process for producing bisphenol a |
| US6586637B2 (en) | 2000-01-18 | 2003-07-01 | Idemitsu Petrochemical Co., Ltd. | Process for producing bisphenol A |
| KR100788091B1 (en) * | 2000-01-18 | 2007-12-21 | 이데미쓰 고산 가부시키가이샤 | Method for manufacturing bisphenol A |
| WO2004014828A1 (en) * | 2002-08-08 | 2004-02-19 | Mitsubishi Chemical Corporation | Method of purifying bisphenol a containing phenol |
| JP2004067617A (en) * | 2002-08-08 | 2004-03-04 | Mitsubishi Chemicals Corp | Purification method of bisphenol A containing phenol |
| US6951965B2 (en) | 2002-08-08 | 2005-10-04 | Mitsubishi Chemical Corporation | Process for purifying phenol-containing bisphenol A |
| USRE41290E1 (en) | 2002-08-08 | 2010-04-27 | Mitsubishi Chemical Corporation | Process for purifying phenol-containing bisphenol A |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3294339B2 (en) | 2002-06-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5243093A (en) | Process and composition | |
| US4209646A (en) | Process for crystallizing an adduct of 2,2-di(4-hydroxyphenyl) propane and phenol | |
| US4354046A (en) | Process for obtaining high purity bisphenol A | |
| CN1209108A (en) | The method for producing free hydroxylamine aqueous solution | |
| US3919330A (en) | Process for the purification of 2,2-bis-(4-hydroxyphenyl)propane | |
| US4533764A (en) | Purification of bisphenols by removing residual solvent | |
| JP4055210B2 (en) | Method for producing arylcyanate | |
| EP0123210A2 (en) | Improved method for purification of bisphenol A | |
| JPH066542B2 (en) | Method for producing bisphenol A | |
| EP0016077A1 (en) | Process for recovering 2,2-bis(4-hydroxyphenyl) propane from an adduct of 2,2-bis(4-hydroxyphenyl) propane and phenol | |
| JPH0578270A (en) | Process for purifying a bisphenol | |
| US4294994A (en) | Purification of bisphenol-A | |
| JPH06107579A (en) | Method for producing bisphenol A | |
| JP2515765B2 (en) | Method for separating o, p ''-isomer of bisphenol A | |
| JP2001316313A (en) | Method for producing crystal adduct of bisphenol A and phenol for producing high-grade bisphenol A | |
| JP2824799B2 (en) | Method for producing crystals of an adduct of bisphenol and phenol | |
| JPH021817B2 (en) | ||
| JPS5928539B2 (en) | Method for producing bisphenol bischlorocarbonate | |
| JP3903644B2 (en) | Method for producing bisphenol A | |
| JPH08333290A (en) | Method for producing bisphenol A | |
| JP3219208B2 (en) | Method for producing bisphenol A | |
| EP0703238B1 (en) | A method for purifying O,S-dimethyl N-acetylphosphoramidothioate | |
| JPS6326735B2 (en) | ||
| JP3294316B2 (en) | Method for producing bisphenol A | |
| JPS62138443A (en) | Method for producing biscresol |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20020226 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090405 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100405 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110405 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110405 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120405 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130405 Year of fee payment: 11 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130405 Year of fee payment: 11 |