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JPH06120625A - Mounted body of glass substrate - Google Patents

Mounted body of glass substrate

Info

Publication number
JPH06120625A
JPH06120625A JP4267066A JP26706692A JPH06120625A JP H06120625 A JPH06120625 A JP H06120625A JP 4267066 A JP4267066 A JP 4267066A JP 26706692 A JP26706692 A JP 26706692A JP H06120625 A JPH06120625 A JP H06120625A
Authority
JP
Japan
Prior art keywords
glass substrate
electrode
flexible circuit
circuit board
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4267066A
Other languages
Japanese (ja)
Inventor
Tsukasa Shiraishi
司 白石
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4267066A priority Critical patent/JPH06120625A/en
Publication of JPH06120625A publication Critical patent/JPH06120625A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/328Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by welding
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/36Assembling printed circuits with other printed circuits
    • H05K3/361Assembling flexible printed circuits with other printed circuits

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
  • Structure Of Printed Boards (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)

Abstract

(57)【要約】 【目的】 FPC(フレキシブル回路基板)をガラス基
板上に実装した装置の、信頼性を高め、品質を向上す
る。 【構成】 ガラス基板1とFPC8と素子面にAuバン
プ電極7を形成したイメージセンサ素子4において、ガ
ラス基板1の主面上に、所定の半田メッキ電極10と所
定のAuバンプ電極7がガラス基板1の所定のITO膜
3と、半田メッキ電極10とAuバンプ電極10が重な
らないようにして、位置が一致するように変性アクリレ
ート系の紫外線硬化型絶縁樹脂11を介して設置し、各
々加圧を施して圧接した後、ガラス基板1側より紫外線
光を照射して絶縁樹脂11を硬化することにより実装す
る製造方法で作製したことを特徴とするイメージセン
サ。
(57) [Abstract] [Purpose] To improve the reliability and quality of an apparatus in which an FPC (flexible circuit board) is mounted on a glass substrate. In an image sensor device 4 having a glass substrate 1, an FPC 8 and Au bump electrodes 7 formed on the device surface, a predetermined solder plating electrode 10 and a predetermined Au bump electrode 7 are provided on the main surface of the glass substrate 1. The predetermined ITO film 3 of No. 1 and the solder plating electrode 10 and the Au bump electrode 10 are arranged so as not to overlap with each other, and they are installed through a modified acrylate-based UV-curable insulating resin 11 so that their positions coincide with each other. An image sensor manufactured by a manufacturing method in which the glass substrate 1 side is irradiated with ultraviolet rays to cure the insulating resin 11 and then the insulating resin 11 is mounted.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はガラス基板上に形成され
た電極部での接続方法に関するもので、ガラス基板の実
装体に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a connecting method at an electrode portion formed on a glass substrate, and more particularly to a mounting body for a glass substrate.

【0002】[0002]

【従来の技術】近年、低コストで平滑性等の性能に優れ
たガラス板を、回路基板とした実装体がイメージセンサ
を始めとした多くの装置に組み込まれている。
2. Description of the Related Art In recent years, a mounting body having a circuit board made of a glass plate which is low in cost and excellent in smoothness and the like has been incorporated in many devices such as image sensors.

【0003】以下図面を参照しながら、上記したイメー
ジセンサの一例について説明する。図3は従来のイメー
ジセンサの要部断面図を示すものである。図3におい
て、21は透光性を有するガラス基板である。22はA
uの電極、23はAg系の電極で、24はこの電極2
2、23に接続する回路導体層である。25はイメージ
センサ素子で、26は受光素子、27はAl電極パッド
である。また、28はフレキシブル回路基板(以下FP
Cと称する)で、29はCu導体層、30は半田メッキ
電極である。更に、31は専用ツールで、32は変性ア
クリレート系の紫外線硬化型の絶縁樹脂である。
An example of the above image sensor will be described below with reference to the drawings. FIG. 3 is a sectional view of a main part of a conventional image sensor. In FIG. 3, reference numeral 21 is a translucent glass substrate. 22 is A
u electrode, 23 is an Ag-based electrode, and 24 is this electrode 2
2, 23 is a circuit conductor layer connected to. Reference numeral 25 is an image sensor element, 26 is a light receiving element, and 27 is an Al electrode pad. In addition, 28 is a flexible circuit board (hereinafter FP
(C), 29 is a Cu conductor layer, and 30 is a solder plating electrode. Further, 31 is a dedicated tool, and 32 is a modified acrylate-based ultraviolet curable insulating resin.

【0004】以上のように構成されたイメージセンサに
ついて、以下その実装方法について説明する。
The mounting method of the image sensor configured as described above will be described below.

【0005】まず、予めスクリーン印刷プロセスを用い
てAu電極22やAg系電極23及び回路導体層24を
形成したガラス基板21を作製する。次に、このガラス
基板21上に紫外線硬化型の絶縁樹脂32を必要量、所
定の位置に塗布し、その上からウエハより切断加工して
個片状態とした複数個のイメージセンサ素子25を、所
定のAl電極パッド27とAu電極22の位置が一致す
るよう直線上に接続して設置した後、電極間の絶縁樹脂
32が押し退けられて当接する状態となるまで加圧す
る。この状態でガラス基板21側より紫外線光を照射し
て絶縁樹脂32の硬化を行い、イメージセンサ素子25
の実装を行う。
First, a glass substrate 21 on which an Au electrode 22, an Ag-based electrode 23 and a circuit conductor layer 24 have been formed is prepared in advance by a screen printing process. Next, a plurality of image sensor elements 25, each of which is made into an individual state by applying a necessary amount of ultraviolet curable insulating resin 32 on the glass substrate 21 at a predetermined position and cutting the wafer from the wafer, After connecting and installing on a straight line so that the predetermined Al electrode pad 27 and the Au electrode 22 are aligned with each other, pressure is applied until the insulating resin 32 between the electrodes is pushed away and abutted. In this state, ultraviolet light is irradiated from the glass substrate 21 side to cure the insulating resin 32, and the image sensor element 25
Implement.

【0006】次に、FPC28には、フォトリソ工法に
より所望のCu導体層29と、電極パッド部には半田メ
ッキ電極30が形成してあり、このFPC28をガラス
基板21の上から、半田メッキ電極30とAg系電極の
位置が一致するように設置した後、FPC28の上から
約250℃の温度の専用ツール31にて加圧して、半田
を溶融させて実装を行う。
Next, a desired Cu conductor layer 29 is formed on the FPC 28 by a photolithography method, and a solder plating electrode 30 is formed on the electrode pad portion. The FPC 28 is formed on the glass substrate 21 from the solder plating electrode 30. After installation so that the positions of the Ag-based electrode and the Ag-based electrode coincide with each other, pressure is applied from above the FPC 28 with a dedicated tool 31 at a temperature of about 250 ° C. to melt and solder the solder.

【0007】[0007]

【発明が解決しようとする課題】しかしながら上記のよ
うな構成では、専用ツール31にてガラス基板21を部
分的に加熱することになり、熱伝導性の悪いガラス板に
おいてはマイクロクラックが発生する。このマイクロク
ラックは時間の経過にともない、熱や振動等の外部環境
の影響で次第に大きくなるので、Ag系電極23の剥離
や、ガラス基板21の割れ等の重大な品質上の欠陥を引
き起こす危険性を包含しているという問題点を有してい
た。
However, in the above-mentioned configuration, the glass substrate 21 is partially heated by the dedicated tool 31, and microcracks are generated in the glass plate having poor thermal conductivity. Since these microcracks gradually become larger due to the influence of external environment such as heat and vibration over time, there is a risk of causing serious quality defects such as peeling of the Ag-based electrode 23 and cracks of the glass substrate 21. It had a problem that it included.

【0008】本発明は上記問題点に鑑み、信頼性の高
い、品質の優れたガラス基板の実装体を提供するもので
ある。
In view of the above problems, the present invention provides a highly reliable and high-quality glass substrate mounting body.

【0009】[0009]

【課題を解決するための手段】主面上に所望の電極を形
成した透光性を有するガラス基板と、所望の電極が形成
してあるFPCにおいて、前記FPCを前記ガラス基板
の主面上に、所定の前記FPCの電極と前記ガラス基板
の電極の位置が一致するよう変性アクリレート系の紫外
線硬化型の絶縁樹脂を介して設置し、加圧を施して電極
間の前記絶縁樹脂が無くなるまで圧接した後、ガラス基
板側より紫外線光を照射して絶縁樹脂を硬化することに
より、FPCをガラス基板上に実装する製造方法で作製
したことを特徴とするガラス基板の実装体である。
In a transparent glass substrate having a desired electrode formed on a main surface and an FPC having the desired electrode formed thereon, the FPC is provided on the main surface of the glass substrate. Installed through a modified acrylate-based UV-curable insulating resin so that the positions of the electrodes of the FPC and the electrodes of the glass substrate coincide with each other, and pressurize until the insulating resin between the electrodes disappears. After that, the glass substrate is mounted by a manufacturing method in which the FPC is mounted on the glass substrate by irradiating ultraviolet light from the glass substrate side to cure the insulating resin.

【0010】[0010]

【作用】本発明は上記した構成によって、FPCをガラ
ス基板上に実装する際に加熱工程を全く必要としないの
で、マイクロクラックの発生が少なく信頼性の高い、品
質の優れたガラス基板の実装体が可能となる。
According to the present invention, since the FPC is mounted on the glass substrate by the above-mentioned construction, no heating step is required at all, so that the micro-cracks are less likely to occur and the reliability is high. Is possible.

【0011】[0011]

【実施例】以下本発明の一実施例のイメージセンサにつ
いて、図面を参照しながら説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An image sensor according to an embodiment of the present invention will be described below with reference to the drawings.

【0012】図1は本発明の第1の実施例におけるイメ
ージセンサの要部断面図を示すものである。図1におい
て、1は透光性を有するガラス基板、2は回路導体層、
3はこの回路導体層2に接続する電極のIndium−
Tin−Oxide(以下ITOと称する)膜で、4は
イメージセンサ素子、5は受光素子、6はAl電極パッ
ド、7はAuバンプ電極である。また、8はFPC、9
はCu導体層、10は半田メッキ電極であり、11は変
性アクリレート系の紫外線硬化型樹脂である。
FIG. 1 is a sectional view showing the main part of an image sensor according to the first embodiment of the present invention. In FIG. 1, 1 is a translucent glass substrate, 2 is a circuit conductor layer,
3 is an Indium- of an electrode connected to the circuit conductor layer 2.
A tin-oxide (hereinafter referred to as ITO) film, 4 is an image sensor element, 5 is a light receiving element, 6 is an Al electrode pad, and 7 is an Au bump electrode. Also, 8 is FPC, 9
Is a Cu conductor layer, 10 is a solder plating electrode, and 11 is a modified acrylate-based ultraviolet curable resin.

【0013】以上のように構成されたイメージセンサに
ついて、以下図1及び図2を用いてその作製方法を説明
する。
A method of manufacturing the image sensor having the above structure will be described below with reference to FIGS.

【0014】まず図1に示すように、予めガラス基板1
には、回路導体層2とITO膜3をスクリーン印刷プロ
セス等にて形成しておく。次にSiウエハ上に半導体プ
ロセスを用いて受光素子5等の素子やAlの配線及び電
極パッド6等を形成した後、溶融した球状のAuをAl
電極パッド6に付着してAuバンプ電極7を形成する。
その後、このウエハを切断加工してイメージセンサ素子
4とする。また、FPC8には、フォトリソ工法により
所望のCu導体層9と、電極部にはCu導体層9表面の
酸化を防ぎ、安定した接続が行えるように半田メッキ電
極10が形成してある。
First, as shown in FIG. 1, a glass substrate 1 is prepared in advance.
Then, the circuit conductor layer 2 and the ITO film 3 are formed by a screen printing process or the like. Next, after the elements such as the light receiving element 5 and the wiring of Al and the electrode pad 6 are formed on the Si wafer by using a semiconductor process, molten spherical Au is Al.
The Au bump electrode 7 is formed by adhering to the electrode pad 6.
Then, the wafer is cut and processed to form the image sensor element 4. Further, a desired Cu conductor layer 9 is formed on the FPC 8 by a photolithography method, and a solder-plated electrode 10 is formed on the electrode portion so as to prevent oxidation of the surface of the Cu conductor layer 9 and perform stable connection.

【0015】この様に作製された部材において、まずガ
ラス基板上1の所定の位置に必要量の紫外線硬化型樹脂
を塗布し、所定のFPC8の半田メッキ電極10とIT
O膜3の位置が一致するように設置し、FPC8とガラ
ス基板1に適当な加圧をかけ、電極間の絶縁樹脂11を
押し退けて圧接した状態で、ガラス基板1側より紫外線
光を照射して絶縁樹脂11を硬化して、ガラス基板1上
へのFPC8の実装を行う。同様にして、ガラス基板1
の主面上の所定の位置に必要量の紫外線硬化型の絶縁樹
脂11を塗布し、複数個のイメージセンサ素子4を、直
線上に接続して配列した状態で、所定のAuバンプ電極
7とITO膜3の位置が一致するようにして設置し、イ
メージセンサ素子4とガラス基板1に適当な加圧をか
け、電極間の絶縁樹脂11を押し退けて圧接した状態
で、ガラス基板1側より紫外線光を照射して絶縁樹脂1
1を硬化してイメージセンサ素子1の接着固定を行う。
このようにして、複数個のイメージセンサ素子4を直線
上に接続してガラス基板1上に実装する。この際、Au
バンプ電極7を設ける事により、同一イメージセンサ素
子5に接続するITO膜3に対し、膜厚の厚いITO膜
では十分に圧接するAuバンプ電極は容易に押し潰され
良接続が行なわれるのは勿論で、膜厚の薄いITO膜に
おいても十分な圧接状態となり、確実な接続が行える。
In the member thus manufactured, first, a required amount of the ultraviolet curable resin is applied to a predetermined position on the glass substrate 1, and the solder plating electrode 10 and the IT of the predetermined FPC 8 are applied.
It is installed so that the positions of the O film 3 are aligned with each other, an appropriate pressure is applied to the FPC 8 and the glass substrate 1, and the insulating resin 11 between the electrodes is pushed away and pressure-contacted, and ultraviolet light is irradiated from the glass substrate 1 side. Then, the insulating resin 11 is cured to mount the FPC 8 on the glass substrate 1. Similarly, the glass substrate 1
A predetermined amount of the ultraviolet curable insulating resin 11 is applied to a predetermined position on the main surface of the, and a plurality of image sensor elements 4 are connected to each other in a straight line and arranged to form a predetermined Au bump electrode 7. The ITO film 3 is installed so that the positions thereof are aligned with each other, appropriate pressure is applied to the image sensor element 4 and the glass substrate 1, and the insulating resin 11 between the electrodes is pushed away and pressure-contacted. Insulating resin 1 by irradiating light
The image sensor element 1 is adhered and fixed by hardening the image sensor element 1.
In this way, the plurality of image sensor elements 4 are linearly connected and mounted on the glass substrate 1. At this time, Au
By providing the bump electrodes 7, the Au bump electrodes, which are sufficiently pressed against the ITO film 3 connected to the same image sensor element 5 with the ITO film having a large film thickness, are easily crushed and a good connection can be achieved. Thus, even a thin ITO film is brought into a sufficient pressure contact state, and reliable connection can be performed.

【0016】以上の実装体において、ガラス基板1上の
電極部をITO膜とすることにより、従来AuやAg系
等の金属膜にて形成したものに比べ、電極の陰になり紫
外線光が照射されない部分がなくなるので、強固な接着
が行え、実装の信頼性が向上する。また、ガラス基板1
とFPC8間及びガラス基板1とイメージセンサ素子4
間の紫外線硬化型絶縁樹脂11の硬化後の膜厚は、50
μm以下となるように構成する。これは、本実施例の接
続のメカニズムにおいて、絶縁樹脂11の収縮応力は電
極間の引力として、絶縁樹脂11の熱膨張は電極間の斥
力として作用するが、この斥力は膜厚に比例した値とな
るため、実使用状態で接続部が断線しない、すなわち、
斥力が引力以下となる条件を満たすためには、膜厚を5
0μm以内とすることが必要であるからである。
In the above-mentioned mounting body, the electrode portion on the glass substrate 1 is made of an ITO film, so that it is shaded by an electrode and irradiated with ultraviolet light as compared with a conventional one formed of a metal film such as Au or Ag. Since there is no unbonded portion, strong bonding can be performed, and mounting reliability is improved. Also, the glass substrate 1
Between the FPC 8 and the glass substrate 1 and the image sensor element 4
The film thickness of the ultraviolet curable insulating resin 11 after curing is 50
It is configured so as to be not more than μm. In the connection mechanism of this embodiment, the contraction stress of the insulating resin 11 acts as an attractive force between the electrodes, and the thermal expansion of the insulating resin 11 acts as a repulsive force between the electrodes. This repulsive force is a value proportional to the film thickness. Therefore, the connection part will not be broken in the actual use state, that is,
To satisfy the condition that the repulsive force is less than the attractive force, the film thickness should be 5
This is because it is necessary to set the thickness within 0 μm.

【0017】以上のように本実施例によれば、紫外線硬
化型の絶縁樹脂の硬化することによりガラス基板上にF
PCを実装することで、信頼性の高い、品質の高いイメ
ージセンサとすることができる。
As described above, according to this embodiment, by curing the ultraviolet curing type insulating resin, F
By mounting a PC, a highly reliable and high-quality image sensor can be obtained.

【0018】以下本発明の第2の実施例のイメージセン
サについて、図面を参照しながら説明する。
An image sensor according to a second embodiment of the present invention will be described below with reference to the drawings.

【0019】図2は本発明の第2の実施例におけるイメ
ージセンサの要部断面図を示すものである。図2におい
て、図1に示す部分と同一部分については、同一番号を
付して説明を省略する。
FIG. 2 is a sectional view showing the main part of an image sensor according to the second embodiment of the present invention. 2, parts that are the same as the parts shown in FIG. 1 are given the same numbers, and descriptions thereof are omitted.

【0020】なお、図1と異なるのは、ガラス基板1上
にスクリーン印刷プロセスにて形成した回路導体層2を
設けてない点である。
The difference from FIG. 1 is that the circuit conductor layer 2 formed by the screen printing process is not provided on the glass substrate 1.

【0021】以上のように構成されたイメージセンサに
ついて、以下その製造方法について説明する。
A method of manufacturing the image sensor having the above structure will be described below.

【0022】本実施例においても第1の実施例と同様に
して、予めイメージセンサ素子4とFPC8を作製して
おく。また、ガラス基板1の主面上にはスクリーン印刷
プロセス等によりITO膜3のみを形成しておく。この
様な部材において、まず、ガラス基板1の主面上の所定
の位置に必要量の変性アクリレート系の紫外線硬化型の
絶縁樹脂11を塗布し、FPC8の所定の半田メッキ電
極10と複数個の直線上に接続して配列したイメージセ
ンサ素子4の所定のAuバンプ電極7が、ガラス基板上
のITO膜3の位置に一致するように設置する。この
際、FPC8の半田メッキ電極10とイメージセンサ素
子4のAuバンプ電極7は、重ならないようにする。次
に、各々適当な加圧を施し、半田メッキ電極10とIT
O膜3間及びAuバンプ電極7とITO膜3間の絶縁樹
脂11を押し退けて圧接した状態で、ガラス基板1側よ
り紫外線光を照射して絶縁樹脂11を硬化して作製す
る。
Also in this embodiment, the image sensor element 4 and the FPC 8 are prepared in advance in the same manner as in the first embodiment. Further, only the ITO film 3 is formed on the main surface of the glass substrate 1 by a screen printing process or the like. In such a member, first, a required amount of a modified acrylate-based UV-curable insulating resin 11 is applied to a predetermined position on the main surface of the glass substrate 1, and a predetermined solder-plated electrode 10 of the FPC 8 and a plurality of solder-plated electrodes 10 are provided. The predetermined Au bump electrodes 7 of the image sensor elements 4 connected and arranged in a straight line are installed so as to match the positions of the ITO film 3 on the glass substrate. At this time, the solder plating electrode 10 of the FPC 8 and the Au bump electrode 7 of the image sensor element 4 should not overlap. Next, appropriate pressure is applied to the solder plated electrode 10 and the IT.
The insulating resin 11 between the O films 3 and between the Au bump electrodes 7 and the ITO film 3 is pushed and pressed to irradiate ultraviolet light from the glass substrate 1 side to cure the insulating resin 11.

【0023】以上のように、本実施例においては、ガラ
ス基板上にスクリーン印刷プロセスにて形成した回路導
体層は設けず、直接ITO膜を介してFPCとイメージ
センサ素子を接続した構造としている。従って、第1の
実施例に追加して導体抵抗及び線間容量が低くなった
り、あるいは、例えば0.1mmピッチ以下のファイン
パターンが容易に形成できたりするので、容易にイメー
ジセンサの性能向上が実現できる。
As described above, in this embodiment, the circuit conductor layer formed by the screen printing process on the glass substrate is not provided, and the FPC and the image sensor element are directly connected via the ITO film. Therefore, in addition to the first embodiment, the conductor resistance and the interline capacitance can be reduced, or a fine pattern with a pitch of 0.1 mm or less can be easily formed, so that the performance of the image sensor can be easily improved. realizable.

【0024】なお、本実施例において10は半田メッキ
電極としたが、Auメッキ電極としても良い。
In this embodiment, 10 is a solder plated electrode, but an Au plated electrode may be used.

【0025】[0025]

【発明の効果】以上のように本発明は、主面上に所望の
電極を形成した透光性を有するガラス基板と、所望の電
極が形成してあるFPCにおいて、前記FPCを前記ガ
ラス基板の主面上に、所定の前記FPCの電極と前記ガ
ラス基板の電極の位置が一致するよう変性アクリレート
系の紫外線硬化型の絶縁樹脂を介して設置し、加圧を施
して電極間の前記絶縁樹脂が無くなるまで圧接した後、
ガラス基板側より紫外線光を照射して絶縁樹脂を硬化す
ることにより、FPCをガラス基板上に実装する製造方
法で作製したことを特徴とするガラス基板の実装体とす
ることにより、信頼性の高く、品質の優れたガラス基板
の実装体を実現できる。
INDUSTRIAL APPLICABILITY As described above, according to the present invention, in a light-transmissive glass substrate having a desired electrode formed on its main surface and an FPC having the desired electrode formed, the FPC is replaced by the glass substrate. The electrode of the FPC and the electrode of the glass substrate are placed on the main surface via a modified acrylate-based UV-curable insulating resin, and the insulating resin between the electrodes is applied by applying pressure. After pressure contact until there is no
High reliability is obtained by using a glass substrate mounting body characterized by being manufactured by a manufacturing method in which FPC is mounted on a glass substrate by irradiating ultraviolet light from the glass substrate side to cure the insulating resin. It is possible to realize a glass substrate mounting body with excellent quality.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例におけるイメージセンサ
の要部断面図
FIG. 1 is a sectional view of an essential part of an image sensor according to a first embodiment of the present invention.

【図2】本発明の第2の実施例におけるイメージセンサ
の要部断面図
FIG. 2 is a sectional view of an essential part of an image sensor according to a second embodiment of the present invention.

【図3】従来のイメージセンサの要部断面図FIG. 3 is a sectional view of a main part of a conventional image sensor.

【符号の説明】[Explanation of symbols]

1、21 ガラス基板 2、24 回路導体層 3 ITO膜 4、24 イメージセンサ素子 5、26 受光素子 6、27 Al電極パッド 7 Auバンプ電極 8、28 FPC 9、29 Cu導体 10 半田メッキ電極 11 変性アクリレート系の紫外線硬化型の絶縁樹脂 22 Au電極 23 Ag系電極 1, 21 Glass substrate 2, 24 Circuit conductor layer 3 ITO film 4, 24 Image sensor element 5, 26 Light receiving element 6, 27 Al electrode pad 7 Au bump electrode 8, 28 FPC 9, 29 Cu conductor 10 Solder plating electrode 11 Modified Acrylate type UV curable insulating resin 22 Au electrode 23 Ag electrode

フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H04N 1/028 Z 8721−5C // H01L 27/14 Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H04N 1/028 Z 8721-5C // H01L 27/14

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】主面上に所望の電極を形成した透光性を有
するガラス基板と、所望の電極が形成してあるフレキシ
ブル回路基板において、フレキシブル回路基板にフレキ
シブル回路基板を前記ガラス基板の主面上に、所定の前
記フレキシブル回路基板の電極と前記ガラス基板の電極
の位置が一致するよう変性アクリレート系の紫外線硬化
型の絶縁樹脂を介して設置し、加圧を施して電極間の前
記絶縁樹脂が無くなるまで圧接した後、ガラス基板側よ
り紫外線光を照射して絶縁樹脂を硬化することにより、
フレキシブル回路基板をガラス基板上に実装する製造方
法で作製したことを特徴とするガラス基板の実装体。
1. A light-transmissive glass substrate having desired electrodes formed on a main surface thereof, and a flexible circuit board having desired electrodes formed thereon, wherein the flexible circuit board is a flexible circuit board. On the surface, the electrodes of the flexible circuit board and the electrodes of the glass substrate are placed via a modified acrylate-based ultraviolet curing type insulating resin so that the positions of the electrodes are aligned with each other, and the insulation between the electrodes is applied by applying pressure. After pressure contact until the resin disappears, ultraviolet light is irradiated from the glass substrate side to cure the insulating resin,
A glass substrate mounting body, which is manufactured by a manufacturing method in which a flexible circuit board is mounted on a glass substrate.
【請求項2】ガラス基板の主面上に設けた電極は、In
dium−Tin−Oxide膜としたことを特徴とす
る請求項1記載のガラス基板の実装体。
2. An electrode provided on the main surface of a glass substrate is made of In
The glass-body mounted body according to claim 1, wherein the glass-tin-oxide film is used.
【請求項3】フレキシブル回路基板の電極は、Cuの導
体層の表面にメッキ工法によりAuを付着して形成した
ことを特徴とする請求項1記載のガラス基板の実装体。
3. The mounting body for a glass substrate according to claim 1, wherein the electrode of the flexible circuit board is formed by depositing Au on the surface of the Cu conductor layer by a plating method.
【請求項4】フレキシブル回路基板の電極は、Cu層の
導体の表面にメッキ工法により半田を付着して形成した
ことを特徴とする請求項1記載のガラス基板の実装体。
4. The glass substrate mounting body according to claim 1, wherein the electrodes of the flexible circuit board are formed by attaching solder to the surface of the conductor of the Cu layer by a plating method.
【請求項5】ガラス基板とフレキシブル回路基板の間に
介在する前記紫外線硬化型の絶縁樹脂は、硬化した後の
膜厚が50μm以下となるよう構成したことを特徴とす
る請求項1記載のガラス基板の実装体。
5. The glass according to claim 1, wherein the ultraviolet curable insulating resin interposed between the glass substrate and the flexible circuit substrate is configured so that the film thickness after curing is 50 μm or less. Board assembly.
【請求項6】ガラス基板とフレキシブル回路基板と素子
面に電極を形成した半導体素子において、ガラス基板の
主面上に、フレキシブル回路基板の所定の電極と前記半
導体素子の所定の電極がガラス基板の所定電極と、前記
フレキシブル回路基板の電極と半導体素子の電極が重な
らないようにして、位置が一致するように変性アクリレ
ート系の紫外線硬化型絶縁樹脂を介して設置し、各々加
圧を施してガラス基板上の電極とフレキシブル回路基板
の電極及び半導体素子の電極との間の前記絶縁樹脂が無
くなるまで圧接した後、ガラス基板側より紫外線光を照
射して絶縁樹脂を硬化することにより、フレキシブル回
路基板と半導体素子をガラス基板上に実装する製造方法
で作製したことを特徴とする請求項1記載のガラス基板
の実装体。
6. A semiconductor element having electrodes formed on a glass substrate, a flexible circuit board, and an element surface, wherein a predetermined electrode of the flexible circuit board and a predetermined electrode of the semiconductor element are glass substrates on the main surface of the glass substrate. The predetermined electrode, the electrode of the flexible circuit board and the electrode of the semiconductor element do not overlap each other, and they are installed through a modified acrylate-based UV-curable insulating resin so that their positions are aligned with each other. The flexible circuit board is formed by pressing the insulating resin between the electrodes on the substrate and the electrodes of the flexible circuit board and the electrodes of the semiconductor element until the insulating resin is exhausted, and then irradiating ultraviolet light from the glass substrate side to cure the insulating resin. The glass substrate mounting body according to claim 1, which is manufactured by a manufacturing method in which the semiconductor element and the semiconductor element are mounted on the glass substrate.
【請求項7】前記半導体素子の電極は、Al電極パッド
上に溶融したAuを付着する製造方法にて形成した突起
電極が設けてあることを特徴とする請求項2記載のガラ
ス基板の実装体。
7. The glass substrate mounting body according to claim 2, wherein the electrode of the semiconductor element is provided with a protruding electrode formed by a manufacturing method in which molten Au is adhered onto an Al electrode pad. .
【請求項8】前記半導体素子は、直線上に複数個の受光
素子のアレイを形成したイメージセンサ素子であり、前
記イメージセンサ素子を複数個、直線上に接続して実装
したことを特徴とする請求項2記載のガラス基板の実装
体。
8. The semiconductor element is an image sensor element in which an array of a plurality of light receiving elements is formed on a straight line, and a plurality of the image sensor elements are connected and mounted on a straight line. The mounted body of the glass substrate according to claim 2.
JP4267066A 1992-10-06 1992-10-06 Mounted body of glass substrate Pending JPH06120625A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4267066A JPH06120625A (en) 1992-10-06 1992-10-06 Mounted body of glass substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4267066A JPH06120625A (en) 1992-10-06 1992-10-06 Mounted body of glass substrate

Publications (1)

Publication Number Publication Date
JPH06120625A true JPH06120625A (en) 1994-04-28

Family

ID=17439565

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4267066A Pending JPH06120625A (en) 1992-10-06 1992-10-06 Mounted body of glass substrate

Country Status (1)

Country Link
JP (1) JPH06120625A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100410946B1 (en) * 2001-05-16 2003-12-18 삼성전기주식회사 Image sensor module and manufacturing method for the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100410946B1 (en) * 2001-05-16 2003-12-18 삼성전기주식회사 Image sensor module and manufacturing method for the same

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