JPH0613301A - Electron beam writer - Google Patents

Abstract

(57) [Abstract] [Purpose] Corrects the proximity effect even when drawing by the cell projection method. [Structure] On a stencil mask, a pattern 20-2 for reduction transfer having a width Lc and a pattern 20- adjacent to the pattern 20-2.
A shield region 22 having a width Ld of Lc / 2 or more is formed between the shield regions 22 and 1, 20-3. The image 23G formed by the electron beam from the previous stage is laterally shifted to the shield region 22 and only part of the pattern 20-2 is irradiated, and the image of this part pattern is drawn on the target while changing the dose.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam drawing apparatus provided with a proximity effect correction mechanism, for example, in a cell projection system.

[0002]

2. Description of the Related Art An electron beam drawing apparatus is used for drawing a fine pattern such as a semiconductor memory device at high speed. In order to draw a fine pattern at high speed, a variable shaped beam whose cross-sectional shape can be changed is used. For example, a wide pattern is drawn by an electron beam with a large cross-sectional shape, while a narrow pattern is drawn with a small cross-sectional shape. It may be drawn with an electron beam.

Further, in the case of a pattern formed by repeating a specific memory cell like a semiconductor memory device, an enlarged pattern of the basic pattern of the repetition is formed on a stencil mask (electron beam transmission mask). By preliminarily reducing and transferring the pattern onto the photosensitive substrate at a predetermined interval, the entire circuit pattern can be drawn at high speed and with high throughput. Therefore, in the conventional electron beam drawing apparatus of this type, arbitrarily selected from a plurality of pre-prepared transfer patterns such as a variable-sized rectangular pattern and a memory cell pattern that are the basis of repetition. The pattern can be drawn by reduction transfer. Such a drawing method is also called a cell projection method.

Generally, in an electron beam drawing apparatus,
For example, when drawing a periodic pattern, how to correct the proximity effect, which is a phenomenon that the shape of the surrounding pattern is deformed, is an important issue. The proximity effect is a phenomenon caused by backscattering of electron beams. In the conventional cell projection type drawing apparatus, in order to correct the proximity effect, drawing is performed by changing the dose (irradiation energy amount) for each drawing shot in the area to be drawn by the variable shaped beam. As a result, the proximity effect correction was satisfactorily corrected in the area where the variable shaped beam is used for drawing.

On the other hand, in the area where the pattern is drawn by the reduced transfer of the basic pattern of the repetition, the unit area of the pattern drawn by the reduced transfer on the photosensitive substrate is 5 μm.
Since it is about square, correction drawing is performed by changing the dose in units of the area of about 5 μm square.

[0006]

However, if the dose is changed in such a unit of an area of about 5 μm square, the correction unit is too coarse and accurate proximity effect correction cannot be performed. The method of correcting the proximity effect at a coarse pitch of about 5 μm square in the area (cell portion) to be drawn by reduction transfer is as follows when the acceleration voltage of the electron beam is 50 kV and the target is a silicon (Si) substrate. There is some effect. However, especially in the case of a target in which a heavy metal such as tungsten (W) or molybdenum (Mo) is deposited on a silicon substrate, the amount of backscattered electrons is large and the spread radius of backscattering is small, so that the 5 μm square There is an inconvenience that good correction cannot be made by correction with a pitch.

In view of the above problems, an object of the present invention is to provide an electron beam drawing apparatus capable of satisfactorily correcting the proximity effect even when drawing is performed by the cell projection method.

[0008]

A first electron beam drawing apparatus according to the present invention is, for example, as shown in FIGS. 1 and 2, irradiated with an electron gun (1) and an electron beam emitted from the electron gun. A first rectangular opening pattern (3a) is formed.
And a plurality of transfer patterns including the second rectangular opening pattern (21) and the reduced transfer pattern (20-j) are arranged, and between the plurality of transfer patterns. And a second electron beam transmission mask (10) having a shield region (22) having a width Ld that is ½ or more of the width Lc of these transfer patterns and a first rectangular opening pattern (3a). Deflection means (5, 8) for deflecting the transmitted electron beam to irradiate all or part of one transfer pattern of the plurality of transfer patterns of the second electron beam transmission mask (10), and this electron beam. The reduced image of all or part of the transfer pattern irradiated with
6) Variable image forming having image forming means (12, 15) for forming an image on the upper surface and irradiation amount control means (2a, 2b, 11) for adjusting the irradiation amount of the electron beam to the target (16). Drawing is performed by switching between drawing by a beam and drawing by batch reduction transfer.

The second electron beam drawing apparatus is, for example, as shown in FIGS. 1 and 2, an electron gun (1) and a first rectangular opening through which the electron beam emitted from the electron gun is irradiated. The first electron beam transmission mask (3) on which the pattern (3a) is formed, the second rectangular opening pattern (21), the reduction transfer pattern (20-62), and the reduction transfer pattern are divided. A plurality of divided patterns (20-27,
20-36, 20-44, 20-53), and a second electron beam transmission mask (1) in which a plurality of transfer patterns including
0) and deflecting means for deflecting the electron beam transmitted through the first rectangular aperture pattern (3c) and irradiating one of the plurality of transfer patterns of the second electron beam transmitting mask (10). 5, 8), an image forming means (12, 15) for forming a reduced image of the transfer pattern irradiated with the electron beam on the target (16), and the irradiation amount of the electron beam to the target (16). Dose control means (2a, 2b,
11), and the drawing is performed by switching between the drawing by the variable shaped beam and the drawing by the collective reduction transfer.

In this case, the plurality of division patterns (2
The area of 0-27, 20-36, 20-44, 20-53) is the pattern for reduction transfer (20-62).
The area is preferably about 3/5 to 1/25.

[0011]

According to the first electron beam writing apparatus of the present invention, the second electron beam transmission mask (10) has a shield region (22) having a width Ld which is 1/2 or more of the width Lc of the transfer pattern. Is provided. Therefore, the first rectangular opening pattern (3
The electron beam transmitted through (c) is laterally displaced by the deflecting means (5, 8), and a certain reduction transfer pattern (20-j) and a shield region (22) of the second electron beam transmission mask (10). By irradiating the electron beam onto the electron beam, an image of a divided pattern having a width of 1/2 or less of the reduced transfer pattern (20-j) is drawn on the target (16).

In this case, the reduction transfer pattern (2
0-j) The total area on the target (16) is, for example, 5
If the size is μm square, the size of the division pattern is 2.5μ.
It can be less than about m squares. Then, by projecting such a division pattern on the target (16) and adjusting the dose of the electron beam using the dose control means (2a, 2b, 11), the proximity effect can be achieved with a pitch smaller than the conventional one. Can be corrected, and the proximity effect correction can be performed more favorably.

Next, according to the second electron beam drawing apparatus, the reduction transfer pattern (20-62) and this reduction transfer pattern are divided into the second electron beam transmission mask (10). A plurality of divided patterns (20-27, 20-
36, 20-44, 20-53) are arranged.
Then, by adjusting the dose of the electron beam using the dose control means (2a, 2b, 11), the division patterns (20-27, 20-36, 20-44, 20-5).
The images of 3) are sequentially drawn on the target (16). As a result, the proximity effect can be corrected with a smaller pitch than in the conventional case, and the correction can be performed better.

In particular, the area of each of the plurality of divided patterns is the pattern for reduction transfer (20-62).
When the area is about 3/5 to 1/25, the proximity effect can be corrected in an area unit of about 3/5 to 1/25 of the related art. Further, if the area of the divided pattern is too small as compared with the reduced transfer pattern (20-62), there is a disadvantage that the drawing time becomes long. Therefore, when the ratio of division is that much, the proximity effect is corrected well, and the exposure time is not particularly long.

[0015]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of an electron beam drawing apparatus according to the present invention will be described below with reference to the drawings. In this example, the present invention is applied to a drawing apparatus that switches between drawing by reduction projection of a cell projection system and drawing by a variable shaped beam.

FIG. 1 shows the structure of an electron beam drawing apparatus of this example. In FIG. 1, 1 is an electron gun. From the electron gun 1, an upper deflector 2a for blanking, a lower deflector 2b for blanking, a first shaping aperture plate 3, a condenser lens 4, a deflector 5 for cell selection, and a first shaping lens 6 are arranged. And the 2nd shaping | molding opening plate 7 is arrange | positioned. One square opening pattern 3a is formed in the central portion of the first shaping aperture plate 3 including the optical axis AX. A deflector 8 for variable shaping, a second shaping lens 9 and a stencil mask 10 are arranged below the second shaping aperture plate 7. An image of the opening pattern of the second shaping aperture plate 7 is formed on the stencil mask 10 by the second shaping lens 9. That is, the arrangement surface of the second shaping aperture plate 7 and the arrangement surface of the stencil mask 10 are conjugate.

Below the stencil mask 10, in order,
A blanking aperture plate 11, a reduction lens 12, a sub deflector 13, a main deflector 14, an objective lens 15 and a target 16 are arranged. Blanking deflectors 2a and 2
When b is not operating, a crossover image (image of the electron beam source) is formed in the opening of the blanking aperture plate 11. On the other hand, by operating the deflectors 2a and 2b, the crossover image thereof is formed on the shielding portion of the blanking aperture plate 11, and the target 1
Irradiation of the electron beam to 6 can be interrupted. Thereby, the dose of each shot of the electron beam to the target 16 can be adjusted, and the deflectors 2a and 2b and the blanking aperture plate 11 function as a dose control means.

FIG. 2 (a) shows the pattern of the second forming aperture plate 7 of FIG. 1. As shown in FIG. 2 (a), the pattern region of the second forming aperture plate 7 has 9 rows × 9 columns. Divide into small areas. Then, except for one small area immediately below the optical axis AX, 80
A relatively large rectangular or square opening pattern 17-1, 17-2 to 17-80 is formed in each of the small regions. In addition, a square aperture pattern 18 for a variable shaped beam is formed in a small area immediately below the optical axis AX.

If the widths of the i-th (i = 1 to 80) opening pattern 17-i in the X direction and the Y direction perpendicular thereto are La and Ma, respectively, this opening pattern 17-i will be described.
X between i and the opening pattern adjacent to this pattern
A shield region 19 having a width in the direction Lb and a width in the Y direction Mb is formed. In this case, the width Lb of the shield area 19 in the X direction is set to 1/2 or more of the width La, and the width Mb of the shield area 19 in the Y direction is set to 1/2 or more of the width Ma. That is, the following relationships are established. Lb ≧ La / 2, Mb ≧ Ma / 2 (1)

FIG. 2B shows the stencil mask 10 of FIG.
2B, the pattern area of the stencil mask 10 is also divided into small areas of 9 rows × 9 columns. On the 81 small areas on the stencil mask 10 or in the vicinity thereof, the electron beams passing through the 81 small areas of the second shaping aperture plate 7 of FIG. Then, the stencil mask 1 of FIG.
0, the transfer patterns 20-1, 20-2, 20-3 to 20-20, 20-2, and 20-3 which are basic for repeating memory cells and the like are respectively included in 80 small areas excluding one small area on the optical axis AX.
20-80 is formed. In addition, a square aperture pattern 21 for a variable shaped beam is provided on one small area on the optical axis AX.
To form. The opening pattern 21 is conjugate with the opening pattern 18 on the second shaping opening plate 7.

If the maximum widths of the j-th (j = 1 to 80) transfer pattern 20-j in the X direction and the Y direction perpendicular thereto are Lc and Mc, respectively, the transfer pattern 20-j will be described. A shield region 22 having a width in the X direction of Ld and a width in the Y direction of Md is formed between and the transfer pattern adjacent to this pattern. In this case, the width Ld of the shield area 22 in the X direction is set to be 1/2 or more of the width Lc, and
The width Md in the Y direction is set to 1/2 or more of the width Mc. That is, the following relationships are established. Ld ≧ Lc / 2, Md ≧ Mc / 2 (2)

In FIG. 2B, the transfer pattern 20-62 has a circuit pattern or the like formed on the entire surface. The transfer pattern 20-62 has a plurality of divided patterns. Pattern 20-27, 20-
Stencil mask 1 for 36, 20-44, 20-53
Place it on 0. Therefore, in this example, the patterns of the transfer patterns 20-27, 20-36, 20-44, and 20-53 can be reduced and transferred onto the target 16 to obtain the same pattern as the transfer pattern 20-62. Can be drawn.

To explain the basic operation of the apparatus of FIG. 1, the electron beam emitted from the electron gun 1 is the first shaping aperture plate 3.
The square opening pattern 3a is illuminated with uniform intensity.
The electron beam having a square cross section shaped by the first shaping aperture plate 3 is irradiated onto one opening pattern of the second shaping aperture plate 7 or in the vicinity thereof through the condenser lens 4 and the first shaping lens 6. An image of the opening pattern of the first shaping aperture plate 3 is formed in the area. At this time, by adjusting the voltage applied to the deflector 5 for cell selection, any one aperture pattern of the aperture pattern group of the second shaping aperture plate 7 or its vicinity is illuminated.

An image of the whole or a part of the aperture pattern of the second shaping aperture plate 7 illuminated by the electron beam is formed on the corresponding region of the stencil mask 10 by the second shaping lens 9. The electron beam transmitted through the stencil mask 10 is focused on the target 16 via the reduction lens 12 and the objective lens 15, and the reduced image of all or part of the selected pattern on the stencil mask 10 is focused on the target 16. Exposed. At this time, when drawing with the variable shaped beam on the target 16, the opening pattern 18 of the second shaping aperture plate 7 and the opening pattern 21 of the stencil mask 10 are selected. Then, by operating the deflector 8 to laterally shift the electron beam on the stencil mask 10, it is possible to draw on the target 16 with a rectangular electron beam having a variable cross section.

On the other hand, in the case of reducing and transferring a pattern such as a memory cell, any of the transfer patterns 20-1, 20-2 to 20-80 on the stencil mask 10 is selected, and the selected pattern is transferred. All or part of the image is reduced and exposed on the target 16.

Next, with reference to FIGS. 3 and 4, the operation in the case of performing exposure for correcting the proximity effect in this example will be described.
In this case, as shown in FIGS. 3A and 3B, an opening pattern 17-2 on the second forming opening plate 7 and a transfer pattern 20-2 on the stencil mask 10 are selected and drawn. And

First, an image of the opening pattern 3a of the first shaping aperture plate 3 in FIG. 1 on the second shaping aperture plate 7 is set to 3aG, and
The deflector 5 in FIG. 1 is operated to laterally shift the image 3aG in the X direction on the aperture pattern 17-2 as shown in FIG. The image 3aG of the opening pattern 3a is slightly larger than the opening pattern 17-2. In this example, the width Lb (≧ L is provided between the opening pattern 17-2 having the width La and the opening pattern 17-1 adjacent to the opening pattern 17-2 in the X direction.
a / 2) the light-shielding area 19 is formed, and its image 3
The aG is laterally displaced to the extent that it does not reach the opening pattern 17-1 beyond the light shielding region 19 at the maximum. Therefore, only the electron beam that irradiates the pattern region 23 in which the opening pattern 17-2 and the image 3aG overlap each other is directed to the stencil mask 10.

Next, the electron beam passing through the area 23 is
An image 23G of the area 23 is formed on the corresponding transfer pattern 20-2 of the stencil mask 10 by the second molding lens 9 of FIG. At this time, the deflector 8 for the variable shaped beam in FIG. 1 is operated, and as shown in FIG. 3B, the image 23G of the area 23 is formed on the transfer pattern 20-2 having the width Lc in the X direction. Is laterally displaced in the X direction. The image of the entire opening pattern 17-2 in FIG. 3A is a transfer pattern 20-.
It is slightly larger than 2. Further, in this example, the light-shielding region 22 having the width Ld (≧ Lc / 2) is formed between the transfer pattern 20-2 having the width Lc and the transfer pattern 20-1 adjacent to the transfer pattern 20-2 in the X direction. , The image 23G exceeds the light shielding area 22 at the maximum, and the transfer pattern 20-1
Move it to the side so that it does not come across.

Therefore, the transfer pattern 20-2 and the image 23
Only the electron beam that irradiates the pattern area 24 overlapping with G is directed to the target 16. This makes target 1
A reduced image of a part of the pattern area 24 of the transfer pattern 20-2 is drawn on the surface 6. Also, as shown in FIG.
Since the second shaping aperture plate 7 and the stencil mask 10 are provided with the light shielding regions 19 and 22 in the Y direction, respectively.
A pattern in which the transfer pattern 20-2 is limited to the Y direction can be similarly reduced and transferred onto the target 16.

3 (a) and 3 (b), the width Lb of the light shielding area 19 is 1/2 or more of the width La of the opening pattern 17-2, and the width Ld of the light shielding area 22 is the transfer pattern 20. -2 is equal to or larger than 1/2 of the width Lc, and therefore the image 3aG and the image 23G of the opening pattern 3a are laterally displaced to the maximum, respectively, so that the transfer pattern 20-2 and the image 2
The area of the pattern region 24 overlapping with 3G can be made almost zero. When a reduced image of a part of the transfer pattern 20-2 is being drawn on the target 16, the blanking deflectors 2 a and 2 b and the blanking aperture plate 11 are used for the target 16.
Adjust the electron beam dose to.

In this case, in the region where the pattern is drawn with high density, the entire transfer pattern 20-2 is exposed on the target 16 as it is. Then, in the region where the pattern is rough, the transfer pattern 20-2 is partially exposed on the target 16 and the dose in each exposure is increased. As a result, the amount of backscattered electrons becomes
It becomes almost uniform on the entire surface of 6, and the proximity effect is corrected. Furthermore, by partially exposing the transfer pattern 20-2 to adjust the dose, the correction pitch of the proximity effect can be made smaller than in the conventional case, and the proximity effect can be corrected better.

For example, the spread radius of backscattered electrons when an electron beam is incident on the target 16 is about the range of the electron beam. Target 16 is silicon (Si)
In the case of the substrate, the range of the electron beam accelerated in 50 kV in silicon is about 15 μm. Therefore, since the spread radius of the backscattered electrons is about 15 μm, if the correction drawing is performed at the pitch of about ⅕, that is, the pitch of 3 μm, the proximity effect can be corrected very well. Therefore, in the transfer pattern on the stencil mask 10 corresponding to the reduced image of 5 μm square, only the area having the width and the length of 3/5 may be illuminated, and the correction drawing may be performed by the electron beam passing through this area. .

The range of the electron beam in a heavy metal such as tungsten (W) is about 2.5 μm, but since the layer of tungsten is usually thin, the spread radius of backscattered electrons is 2.5 μm and the silicon substrate. In this case, it is about 5 μm which is an intermediate of 15 μm, and the correction exposure may be performed at a pitch of about 1 μm. Therefore, it suffices to correct the dose and perform drawing with a beam of a reduced image having a size of 1 μm × 1 μm.

A more specific description will be given with reference to FIG.
FIG. 4A shows an example of a pattern on the target 16. In FIG.
5-3, ... Are low-density (coarse) patterns in the peripheral portion, and it is assumed that a large number of high-density patterns 27 are arranged in the region 26 indicated by a dotted line with a slight gap. In this case, the inside of the region 26 is finely divided in the peripheral portion and divided into 5 μm squares in the central portion. That is, the length L of one side of the central region 33 is 5
3 μm, and 5 μm square is the same area as the entire reduced image of the transfer pattern 20-2 in FIG. 3B. Then, in the region 28, a dose 1.5 times as large as that in the central portion is applied, and
In the region 30, 1.3 times in the region 30, 1.2 times in the region 31, and 1.1 times in the region 32. Furthermore, low density patterns 25-1, 25-2, 25 around
-3, ... Are drawn by the variable shaped beam, and the dose is 2.1 times that in the case of the central region 33.

Next, FIG. 4B shows a case of drawing on a target in which tungsten (W) is partially vapor-deposited with a thickness of 0.2 μm on the surface of a silicon (Si) substrate.
In FIG. 4B, 34 is a tungsten base pattern. Then, the region is finely divided in the peripheral portion of the base pattern 34, and is divided into 5 μm squares like the region 35 at a place apart from the base pattern 34. That is, area 3
One side L2 of 5 is 5 μm. When the dose of the region 35 is 1, the region 36 is 0.9 times, the region 37 is 0.8 times, the region 38 is 0.7 times, and the region 39 is 0.6 times.
The drawing was performed at a dose of 5 times, the area 40 was 0.6 times, and the area 41 was 0.5 times.

Next, the divided transfer patterns 20-27, 20- on the stencil mask 10 shown in FIG. 2 (b).
A method for correcting the proximity effect using 36, 20-44, and 20-53 will be described. Before that, in the case of the method of illuminating only a part of the transfer pattern 20-2 as shown in FIGS. 3A and 3B, there are the following disadvantages. That is,
When the pattern of the area 24 of FIG. 3B is exposed on the target 16, the pattern of the area adjacent to the area 24 is also exposed so as to be connected on the target 16. An image of the edge of the opening pattern 17-2 of FIG. 3A appears at the connection portion on the target 16.

In this case, the image of the opening pattern 17-2 on the stencil mask 10 is subjected to an extra space charge effect between the second shaping aperture plate 7 and the stencil mask 10 of FIG. The edges are not sharp. Therefore, there is a possibility that the connection portion of the pattern on the target 16 is distorted. As a countermeasure, transfer patterns 20-27, 20 having a small area on the stencil mask 10 shown in FIG.
-36, 20-44, 20-53 image 16
Exposure is performed while adjusting the dose in order. This allows
Even if the edge of the opening pattern 17-2 becomes unclear due to the space charge effect, it is possible to draw a pattern on the target 16 in which the connection portion is not distorted and the proximity effect is corrected.

The present invention is not limited to the above-described embodiments, and it goes without saying that various configurations can be adopted without departing from the gist of the present invention.

[0039]

According to the first electron beam writing apparatus of the present invention, the electron beam is laterally offset to the shielded region of the second electron beam transmission mask, and only a part of the transfer pattern is changed in dose onto the target. Since drawing is possible, there is an advantage that the proximity effect can be satisfactorily corrected even when drawing by the cell projection method. In this case, since it is not necessary to change the shape of the mask pattern, the proximity effect can be corrected more easily than when the proximity effect is corrected by partially thickening or thinning the pattern.

Further, according to the second electron beam drawing apparatus, there is an advantage that the proximity effect can be satisfactorily corrected by drawing the divided pattern on the target while changing the dose. is there.

[Brief description of drawings]

FIG. 1 is an end view along a vertical cross section of an embodiment of an electron beam drawing apparatus according to the present invention.

2A is a plan view showing a pattern of a second shaping aperture plate 7 of FIG. 1, and FIG. 2B is a plan view showing a pattern of the stencil mask 10 of FIG.

3A is an explanatory diagram of lateral displacement of an electron beam on the second shaping aperture plate 7 of FIG. 1, and FIG. 3B is a stencil mask 1 of FIG.
It is explanatory drawing of the lateral displacement of the electron beam on 0.

FIG. 4A is a plan view showing an example of a method of dividing a region on a target when correcting a proximity effect in the embodiment,
(B) is a plan view showing another example of the method of dividing the region on the target.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Electron gun 2a, 2b Blanking deflector 3 1st shaping aperture plate 4 Condenser lens 5 Cell selection deflector 6 1st shaping lens 7 2nd shaping aperture plate 8 Variable shaping beam deflector 9 2nd Molded lens 10 Stencil mask 11 Blanking aperture plate 12 Reduction lens 13 Sub deflector 14 Main deflector 15 Objective lens 16 Target 17-1, 17-2, 17-3, ... Aperture pattern 20-1, 20-2, 20-3, ... Transfer pattern

Claims (2)

[Claims] 1. An electron gun, a first electron beam transmission mask having a first rectangular opening pattern on which an electron beam emitted from the electron gun is irradiated, a second rectangular opening pattern, and A plurality of transfer patterns including a reduction transfer pattern are arranged, and each of the plurality of transfer patterns has a width of 1/1 of the width of the transfer pattern.
A second electron beam transmission mask having a shielded region of two or more widths formed thereon, and an electron beam transmitted through the first rectangular aperture pattern is deflected to transfer the plurality of second electron beam transmission masks. Deflection means for irradiating all or part of one transfer pattern of the pattern, image forming means for forming a reduced image of all or part of the transfer pattern irradiated with the electron beam on a target, and to the target And an irradiation amount control means for adjusting the irradiation amount of the electron beam, and the drawing is performed by switching between drawing by a variable shaped beam and drawing by collective reduction transfer. 2. An electron gun, a first electron beam transmission mask having a first rectangular opening pattern on which an electron beam emitted from the electron gun is irradiated, and a second rectangular opening pattern. A second electron beam transmission mask in which a plurality of transfer patterns including a reduction transfer pattern and a plurality of divided patterns obtained by dividing the reduction transfer pattern are arranged; and the first rectangular opening pattern. Deflection means for deflecting the transmitted electron beam to irradiate one of the plurality of transfer patterns of the second electron beam transmission mask, and a reduced image of the transfer pattern irradiated with the electron beam is formed on a target. And an irradiation amount control unit that adjusts the irradiation amount of the electron beam to the target, and performs drawing by switching between drawing with a variable shaped beam and drawing with collective reduction transfer. Electron beam drawing apparatus.