JPH06186568A - Ferroelectric liquid crystal device - Google Patents
Ferroelectric liquid crystal deviceInfo
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- JPH06186568A JPH06186568A JP35478392A JP35478392A JPH06186568A JP H06186568 A JPH06186568 A JP H06186568A JP 35478392 A JP35478392 A JP 35478392A JP 35478392 A JP35478392 A JP 35478392A JP H06186568 A JPH06186568 A JP H06186568A
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- liquid crystal
- ferroelectric liquid
- ferroelectric
- alignment
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Abstract
(57)【要約】
【目的】 パネル面内でムラのない強誘電性液晶素子を
提供する。
【構成】 強誘電性液晶と、この強誘電性液晶を間に保
持して対向するとともにその対向面にはそれぞれ強誘電
性液晶に電圧を印加するための電極が形成されかつ強誘
電性液晶を配向するための一軸性配向処理が施された一
対の基板を備え、交流を印加する処理によってみかけの
チルト角が、交流を印加しない場合より大きくされてい
る液晶素子において、その液晶と基板界面での傾き方向
が上下の基板間で逆方向でプレチルト角が5°未満であ
り、その強誘電性液晶の自発分極が25nC/cm2 以
上であることを特徴とする強誘電性液晶素子。
(57) [Abstract] [Purpose] To provide a ferroelectric liquid crystal device having no unevenness in the panel plane. [Structure] The ferroelectric liquid crystal and the ferroelectric liquid crystal are opposed to each other with the ferroelectric liquid crystal held therebetween, and electrodes for applying a voltage to the ferroelectric liquid crystal are formed on the opposed surfaces, respectively. In a liquid crystal element that has a pair of substrates that have been subjected to a uniaxial orientation process for orientation, and the apparent tilt angle by the process of applying an alternating current is larger than that when no alternating current is applied, at the interface between the liquid crystal and the substrate. A ferroelectric liquid crystal device having a pretilt angle of less than 5 ° and a spontaneous polarization of the ferroelectric liquid crystal of 25 nC / cm 2 or more.
Description
【0001】[0001]
【産業上の利用分野】本発明は、液晶表示素子や液晶シ
ャッター等で用いる液晶素子、とくに強誘電性液晶素子
に関し、さらに詳しくは、液晶分子の配向状態を改善す
ることにより、表示特性を改善した液晶素子に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal element used in a liquid crystal display element, a liquid crystal shutter or the like, particularly a ferroelectric liquid crystal element. More specifically, it improves display characteristics by improving the alignment state of liquid crystal molecules. The present invention relates to a liquid crystal element.
【0002】[0002]
【従来の技術】強誘電性液晶分子の屈折率異方性を利用
して偏光素子との組み合わせにより透過光線を制御する
型の表示素子がクラーク(Clark)およびラガウォ
ール(Lagerwall)により提案されている(特
開昭56−107216号公報、米国特許第43679
24号明細書等)。この強誘電性液晶は、一般に特定の
温度域において、非らせん構造のカイラルスメクチック
C相(Sm* C)又はH相(Sm* H)を有し、この状
態において、印加される電界に応答して第1の光学的安
定状態と第2の光学的安定状態のいずれかを取り、かつ
電界の印加のないときはその状態を維持する性質、すな
わち双安定性を有し、また電界の変化に対する応答も速
やかであり、高速ならびに記憶型の表示素子用としての
広い利用が期待され、特にその機能から大画面で高精細
なディスプレーへの応用が期待されている。2. Description of the Related Art A display device of a type in which transmitted light rays are controlled by utilizing a refractive index anisotropy of ferroelectric liquid crystal molecules in combination with a polarizing element has been proposed by Clark and Lagerwall. (JP-A-56-107216, U.S. Pat. No. 43679)
No. 24, etc.). This ferroelectric liquid crystal generally has a non-helical chiral smectic C phase (Sm * C) or H phase (Sm * H) in a specific temperature range, and in this state, it responds to an applied electric field. Has either a first optical stable state or a second optical stable state and maintains the state when no electric field is applied, that is, has bistability, and is resistant to changes in the electric field. It has a quick response and is expected to be widely used for high-speed and memory type display devices. In particular, its function is expected to be applied to a large-screen, high-definition display.
【0003】この双安定性を有する液晶を用いた光学変
調素子が所定の駆動特性を発揮するためには、一対の平
行基板間に配列される液晶が、電界の印加状態とは無関
係に、上記2つの安定状態の間での変換が効率的に起こ
るような分子配列状態にあることが必要である。In order for the optical modulation element using the liquid crystal having the bistability to exhibit a predetermined driving characteristic, the liquid crystal arranged between the pair of parallel substrates is irrespective of the electric field application state. It is necessary that the molecular arrangement is such that conversion between the two stable states occurs efficiently.
【0004】また、液晶の複屈折率を利用した液晶素子
の場合、直交ニコル下での透過率は、I/I0 =sin
2 4θsin2 (Δn・dπ/λ)で表される。Further, in the case of a liquid crystal element utilizing the birefringence of liquid crystal, the transmittance under a crossed Nicols is I / I 0 = sin
It is represented by 2 4 θsin 2 (Δn · dπ / λ).
【0005】(式中:I0 は入射光強度、Iは透過光強
度、θはチルト角、Δnは屈折率異方性、dは液晶層の
膜厚、λは入射光の波長である。)前述の非らせん構造
におけるチルト角θは、第1と第2の配向状態での捩じ
れ配列した液晶分子の平均分子軸方向の角度として現れ
ることになる。上式によれば、かかるチルト角θが2
2.5°の角度のとき最大の透過率となり、双安定性を
実現する非らせん構造でのチルト角が22.5°にでき
る限り近いことが必要である。(In the formula: I 0 is the incident light intensity, I is the transmitted light intensity, θ is the tilt angle, Δn is the refractive index anisotropy, d is the thickness of the liquid crystal layer, and λ is the wavelength of the incident light. ) The tilt angle θ in the above-mentioned non-helical structure appears as an angle in the average molecular axis direction of the twisted liquid crystal molecules in the first and second alignment states. According to the above equation, the tilt angle θ is 2
The maximum transmittance is obtained when the angle is 2.5 °, and it is necessary that the tilt angle in the non-helical structure that realizes the bistability is as close as possible to 22.5 °.
【0006】上記のような強誘電性液晶素子を得る方法
として交流を印加して配向を変化させた液晶素子が提案
されている(特開昭62−161123)。この技術に
より非螺旋構造におけるチルト角θを増大させることが
でき、さらに液晶の配列を上下基板間でツイスト配向か
らほぼ同じC−ダイレクタを有するパラレル配向(ユニ
フォーム配向)にできることからクロスニコル下におけ
る暗状態の透過率を少なくすることができる。これによ
り高いコントラストが得られる。As a method for obtaining the above ferroelectric liquid crystal element, a liquid crystal element in which an orientation is changed by applying an alternating current has been proposed (Japanese Patent Laid-Open No. 62-161123). The tilt angle θ in the non-helical structure can be increased by this technique, and the alignment of the liquid crystal can be changed from the twist alignment between the upper and lower substrates to the parallel alignment (uniform alignment) having substantially the same C-director. The transmittance of the state can be reduced. This provides high contrast.
【0007】[0007]
【発明が解決しようとする課題】交流を印加して配向を
ユニフォーム配向にする場合、再配向時にSm* C相に
おいてジグザグ配向欠陥があると、その影響で配向状態
が不均一になる。これによりパネル内でのジグザグ配向
欠陥の分布がしきい値のムラになってしまう。白黒2値
においても階調素子においてもこの面内でのムラはパネ
ル全体としての駆動マージンを減少させ、特に階調素子
においてはこのムラはより深刻な問題となる。When an alternating current is applied to make the alignment uniform, the presence of zigzag alignment defects in the Sm * C phase at the time of realignment makes the alignment state non-uniform. As a result, the distribution of zigzag alignment defects within the panel becomes uneven in the threshold value. In both black and white binary and gradation elements, unevenness in this plane reduces the driving margin of the entire panel, and especially in gradation elements, this unevenness becomes a serious problem.
【0008】また階調表示をするためには、しきい値特
性が電圧およびパルス幅に対して、急俊に立ち上がり過
ぎていると、好ましくない。例えば、電界によりドメイ
ンの反転が始まる電圧をVth、完了する電圧をVsat と
したとき、Vsat /Vthをγとして、この値が1に近い
としきい値特性が急俊に立ち上がり過ぎていて階調表示
がしづらくなる。In order to perform gradation display, it is not preferable that the threshold characteristic rises too rapidly with respect to the voltage and the pulse width. For example, when the voltage at which domain inversion starts due to the electric field is V th and the voltage at which the domain inversion is completed is V sat , V sat / V th is set to γ, and when this value is close to 1, the threshold characteristic rises too rapidly. And gradation display becomes difficult.
【0009】高輝度、高スピードのスイッチング素子を
実現するためには大きな自発分極を有する強誘電性液晶
を用いる必要がある。しかしながら、シェブロン構造を
有する配向ではその自発分極が生み出す逆電界の影響に
よりスイッチング特性が損なわれ易く、表示素子として
機能しなくなる。また、配向膜等の液晶と電極の間の層
の電気容量が小さければ小さいほど、電気抵抗が高けれ
ば高いほど、自発分極が生み出す逆電界の影響によりス
イッチング特性が損なわれ易くなる。In order to realize a switching element with high brightness and high speed, it is necessary to use a ferroelectric liquid crystal having a large spontaneous polarization. However, in the orientation having the chevron structure, the switching characteristics are easily impaired due to the influence of the reverse electric field generated by the spontaneous polarization, and the display element does not function. Further, the smaller the electric capacity of the layer between the liquid crystal such as the alignment film and the electrode and the higher the electric resistance, the more easily the switching characteristics are deteriorated due to the influence of the reverse electric field generated by the spontaneous polarization.
【0010】これまでに行われている交流印加処理にお
ける印加電圧は、通常±20〜30V/μmであり、高
い電圧が必要であった。そのために交流印加処理を駆動
波形発生用の回路を用いて行うことが困難であった。交
流印加処理が±10V付近で行えれば情報信号の発生回
路を用いることができAC印加処理を簡便に行える。The applied voltage in the alternating current application process that has been performed so far is usually ± 20 to 30 V / μm, and a high voltage is required. Therefore, it is difficult to perform the AC application process using the drive waveform generating circuit. If the AC application process can be performed in the vicinity of ± 10 V, the information signal generating circuit can be used and the AC application process can be easily performed.
【0011】[0011]
【課題を解決するための手段】そこで本発明は、上記種
々の問題、特に均一配向性を改善するため強誘電性液晶
と、この強誘電性液晶を間に保持して対向するとともに
その対向面にはそれぞれ強誘電性液晶に電圧を印加する
ための電極が形成されかつ強誘電性液晶を配向するため
の一軸性配向処理が施された一対の基板を備え、交流を
印加する処理によってみかけのチルト角が、交流を印加
しない場合より大きくされている液晶素子において、そ
の液晶と基板界面での傾き方向が上下の基板間で逆方向
でプレチルト角が5°未満であり、その強誘電性液晶の
自発分極が25nC/cm2 以上であることを特徴とす
る強誘電性液晶素子とするものである。In order to improve the above-mentioned various problems, in particular, uniform alignment, the present invention is directed to a ferroelectric liquid crystal and a ferroelectric liquid crystal which are opposed to each other with the ferroelectric liquid crystal held therebetween. Each of them has a pair of substrates on which electrodes for applying a voltage to the ferroelectric liquid crystal are formed and which is subjected to a uniaxial alignment treatment for aligning the ferroelectric liquid crystal. In a liquid crystal device in which the tilt angle is made larger than that when no alternating current is applied, the pretilt angle is less than 5 ° in the direction in which the liquid crystal and the substrate interface are tilted in the opposite direction between the upper and lower substrates. Is a ferroelectric liquid crystal element having a spontaneous polarization of 25 nC / cm 2 or more.
【0012】以下、図面により本発明を詳細に説明す
る。The present invention will be described in detail below with reference to the drawings.
【0013】図1は、本発明の強誘電性液晶セルの一例
を模式的に描いたものである。FIG. 1 schematically shows an example of the ferroelectric liquid crystal cell of the present invention.
【0014】11aと11bは、それぞれIn2 O3 や
ITO(Indium Tin Oxide)等の透明
電極12aと12bで被覆された基板(ガラス板)であ
り、その上に配向制御膜13aと13bが積層されてい
る。配向制御膜13aと13bはラビング等の一軸性配
向処理が施してある。Reference numerals 11a and 11b denote substrates (glass plates) covered with transparent electrodes 12a and 12b such as In 2 O 3 and ITO (Indium Tin Oxide), respectively, on which alignment control films 13a and 13b are laminated. Has been done. The orientation control films 13a and 13b are subjected to uniaxial orientation treatment such as rubbing.
【0015】透明電極12と配向制御膜13の間に低抵
抗のショート防止層を積層してもよい。基板11aと1
1bとの間には強誘電性液晶14が配置され、基板11
aと11bとの間隔はビーズスペーサ15によって保持
される。16a,16bは偏向板である。A low resistance short-circuit prevention layer may be laminated between the transparent electrode 12 and the orientation control film 13. Substrates 11a and 1
The ferroelectric liquid crystal 14 is arranged between the substrate 1 and
The space between a and 11b is held by the bead spacer 15. Reference numerals 16a and 16b are deflection plates.
【0016】このような構成において、液晶と基板界面
での傾き方向が上下の基板間で逆方向とし、プレチルト
を5°未満、好ましくは0〜3°にし、強誘電性液晶の
自発分極を25nC/cm2 以上、好ましくは、50n
C/cm2 以上にすることによりパネル面内でのムラの
ない、高速かつ高コントラストな強誘電性液晶素子をえ
ることができる。本発明において「液晶と基板界面での
傾き方向が上下の基板間で逆」とは、上下基板界面での
液晶分子の頭のもたげ方が図2の状態であることを言
い、そのためには、図1の矢印Aで示す如く一軸性配向
処理方向を平行かつ同一方向となる様に基板11a、1
1bを貼り合わせる必要がある。In such a structure, the tilt direction at the interface between the liquid crystal and the substrate is opposite between the upper and lower substrates, the pretilt is less than 5 °, preferably 0 to 3 °, and the spontaneous polarization of the ferroelectric liquid crystal is 25 nC. / Cm 2 or more, preferably 50n
By setting the ratio to C / cm 2 or more, it is possible to obtain a high-speed and high-contrast ferroelectric liquid crystal element without unevenness in the panel surface. In the present invention, "the tilt directions of the liquid crystal and the substrate interface are opposite between the upper and lower substrates" means that the heads of the liquid crystal molecules at the upper and lower substrate interfaces are held in the state shown in FIG. As shown by an arrow A in FIG. 1, the substrates 11a and 1a are arranged so that the uniaxial alignment treatment directions are parallel and in the same direction.
It is necessary to attach 1b.
【0017】配向制御膜13の膜厚は、スイッチング特
性の更なる向上を考慮すれば5nm以下が好ましいが、
低抵抗配向制御膜とした場合には、5nm以上の膜厚で
もよい。The thickness of the orientation control film 13 is preferably 5 nm or less in consideration of the further improvement of the switching characteristics.
When the low resistance orientation control film is used, the film thickness may be 5 nm or more.
【0018】また、本発明に使用する強誘電性液晶のカ
イラルスメクティックC相は、その螺旋ピッチを1μm
以下とすることにより、階調性の更なる向上を図ること
ができ好ましい。The chiral smectic C phase of the ferroelectric liquid crystal used in the present invention has a spiral pitch of 1 μm.
The following is preferable because the gradation can be further improved.
【0019】更に、強誘電性液晶配向状態が2つの異な
る層法線の異なる層を有し、それが規則正しく交互にス
トライプ状に配置していることが、ストライプ間のしき
い値が異なり、階調性の更なる向上を図ることができる
点から好ましい。Furthermore, the ferroelectric liquid crystal alignment state has two layers having different layer normals, and the layers are regularly and alternately arranged in stripes, which means that the thresholds between the stripes are different, and It is preferable in that the tonality can be further improved.
【0020】本発明における交流印加処理による配向変
化、層構造変化について示す。The change in orientation and the change in layer structure due to the alternating current application treatment in the present invention will be described.
【0021】図3は液晶材料(FLC3)配向膜、東レ
(株)製セミコファインLp64(3nm)における上
記素子の交流印加前の配向状態(1)である。図4はそ
れに交流±10V,10Hzを印加後の配向状態(2)
である。配向状態(1)の非らせん構造におけるチルト
角θは8°であったが、配向状態(2)の非らせん構造
におけるチルト角θは26°であった。また、X線解折
により層構造の変化を測定した結果を図5{配向状態
(1)}、図6{配向状態(2)}で示す。図5から配
向状態(1)は上下基板間に1つ以上の屈曲を有する配
向であることがわかる。その配向状態が交流印加によっ
て、疑似ブックシェルフ構造になっていることが図6の
結果からわかる。FIG. 3 shows an alignment state (1) of the above liquid crystal material (FLC3) alignment film, Semicofine Lp64 (3 nm) manufactured by Toray Industries, Inc. before AC application. Fig. 4 shows the orientation state (2) after applying ± 10 V AC and 10 Hz to it.
Is. The tilt angle θ in the non-helical structure in the alignment state (1) was 8 °, but the tilt angle θ in the non-helical structure in the alignment state (2) was 26 °. Further, the results of measuring the change in the layer structure by X-ray bending are shown in FIG. 5 {alignment state (1)} and FIG. 6 {alignment state (2)}. It can be seen from FIG. 5 that the alignment state (1) is an alignment having one or more bends between the upper and lower substrates. It can be seen from the results in FIG. 6 that the orientation state is a pseudo bookshelf structure due to the application of alternating current.
【0022】[0022]
【実施例】以下、実施例にて、本発明を説明する。本実
施例における測定方法は以下の通りである。EXAMPLES The present invention will be described below with reference to examples. The measuring method in this example is as follows.
【0023】[みかけのチルト角の測定]液晶のしきい
値以上の単発パルスを印加した後、無電界下、かつクロ
スニコル下、その間に配置された強誘電性液晶素子を偏
向板と水平に回転させ第1の消光位をさがし、次に蒸気
の単発パルスと逆極性のパルスを印加した後、無電界
下、第2の消光位をさがす。このときの第一の消光位ま
での角度の1/2をθaとした。[Measurement of Apparent Tilt Angle] After applying a single pulse equal to or more than the threshold value of the liquid crystal, the ferroelectric liquid crystal element placed between them under no electric field and under crossed Nicols is placed horizontally with the deflection plate. After rotating, the first extinction position is searched, and after applying a pulse having a polarity opposite to that of a single vapor pulse, the second extinction position is searched under no electric field. The half of the angle to the first extinction position at this time was defined as θa.
【0024】[プレチルト角αの測定]Jpn.J.A
ppl.Phys.Vo.119(1980)NO.1
0,Short Notes 2013に記載されてい
る方法(クリスタルローテーション法)に従って求め
た。[Measurement of Pretilt Angle α] Jpn. J. A
ppl. Phys. Vo. 119 (1980) NO. 1
0, according to the method (crystal rotation method) described in Short Notes 2013.
【0025】本発明における実施例は、室温で以下の物
性値を持つ液晶材料によって得られた。The examples in the present invention were obtained with a liquid crystal material having the following physical properties at room temperature.
【0026】[0026]
【表1】 (実施例1)透明電極の付いたガラス基板上に、日立化
成(株)製のポリアミド酸LQ1802の0.4%NM
P/nBC=1/1溶液をスピナーで塗布し、80℃で
5分間前乾燥したのち270℃で1時間焼成した。この
時、配向膜厚は30Åであった。次に、この基板を押込
み0.4mm,回転数1000rpm,送り速度40m
m/s×2回でナイロン布を用いてでラビングした。[Table 1] (Example 1) 0.4% NM of polyamic acid LQ1802 manufactured by Hitachi Chemical Co., Ltd. was placed on a glass substrate having a transparent electrode.
A P / nBC = 1/1 solution was applied with a spinner, pre-dried at 80 ° C. for 5 minutes, and then baked at 270 ° C. for 1 hour. At this time, the orientation film thickness was 30Å. Next, push in this substrate 0.4 mm, rotation speed 1000 rpm, feed speed 40 m
It was rubbed with a nylon cloth at m / s × 2 times.
【0027】この後、1.5μmのギャップを保って、
ラビング方向が平行になるよう貼り合わせセルを作成し
た。該セルのプレチルト角は同じ処理を施した基板をラ
ビング方向が反平行になるように貼り合わせたセルに液
晶を注入し、SmA状態でクリスタルローテーション法
を用いて測定し、約4.5°であった。上記セルにFL
C2を減圧下で80℃に昇温し、毛細管現象で注入し
た。その後除冷し、室温で偏光顕微鏡を用いて配向観察
を行ったところ、ジグザグ欠陥はほとんどなく、淡い白
と黒の2状態が存在した。この状態に±20V/μm、
10Hzの方形波を5分、30℃で印加し、テクスチャ
ーを変化させたところ、見かけのチルト角θa は8°か
ら19.5°に変化しており、欠陥のない均一な配向状
態が形成された。After this, keeping a gap of 1.5 μm,
A bonded cell was prepared so that the rubbing directions were parallel to each other. The pretilt angle of the cell was measured by injecting a liquid crystal into a cell in which substrates subjected to the same treatment were attached so that the rubbing directions were anti-parallel, and was measured by a crystal rotation method in the SmA state. there were. FL in the above cell
C2 was heated to 80 ° C. under reduced pressure and injected by capillarity. After cooling, the alignment was observed with a polarizing microscope at room temperature. As a result, there were almost no zigzag defects, and there were two states, pale white and black. ± 20V / μm in this state,
When a square wave of 10 Hz was applied for 5 minutes at 30 ° C. and the texture was changed, the apparent tilt angle θ a changed from 8 ° to 19.5 °, and a uniform alignment state without defects was formed. Was done.
【0028】この配向状態のスイッチング特性をパルス
幅40μS双極性パルスで、白状態、黒状態間のスイッ
チングしきい値の1.5倍を印加して透過光変化で観察
したところ、図7の結果が得られ、100%白黒反転が
確認された。The switching characteristics of this orientation state were observed by changing the transmitted light by applying a pulse width of 40 μS bipolar pulse and 1.5 times the switching threshold between the white state and the black state. Was obtained, and 100% black and white reversal was confirmed.
【0029】(実施例2)透明電極の付いたガラス基板
上に、日産化学(株)製のポリアミド酸サンエバーSE
100の0.4%,NMP/nBC=1/1溶液を、ス
ピナーで塗布し、80℃で5分間前乾燥した後、270
℃で1時間焼成した。この時、配向膜厚は30Åであっ
た。次に、この基板をローラー押込み0.40(m
m),ローラー回転数1000(rpm),ローラー送
り速度12(mm/s)×1回でナイロン布ででラビン
グした。(Example 2) On a glass substrate with a transparent electrode, polyamic acid Sanever SE manufactured by Nissan Chemical Industries, Ltd.
A 0.4% solution of 100, NMP / nBC = 1/1 was applied by a spinner and pre-dried at 80 ° C. for 5 minutes, and then 270
Calcination was performed for 1 hour. At this time, the orientation film thickness was 30Å. Next, this substrate was pushed by a roller of 0.40 (m
m), roller rotation number 1000 (rpm), roller feed speed 12 (mm / s) × 1 time, and rubbing with a nylon cloth.
【0030】この後、1.5μmのギャップを保ってラ
ビング方向が平行になるように貼り合わせ、セルを作成
した。該セルのプレチルト角αは、クリスタルローテー
ション法により測定され3°であった。Then, the cells were prepared by laminating the gaps of 1.5 μm so that the rubbing directions were parallel to each other. The pretilt angle α of the cell was 3 ° as measured by the crystal rotation method.
【0031】該セルに上記FLC2と3を減圧下で80
℃に昇温し、毛細管現象で注入した。その後除冷し、室
温で偏光顕微鏡を用いて配向観察を行ったところ、FL
C2はジグザグ欠陥がほとんどなく、淡い白状態と黒状
態が存在していた。FLC3は多少の消光位のずれた淡
い白黒状態が存在していた。そこでFLC2は30℃で
±20V/μm、10Hzを5分間印加してテクスチャ
ーを変化させ、見かけのチルト角θa が19.5°の均
一配向を得、FLC3は70℃から30℃まで±10V
/μm、10Hzの交流電場を印加しながら徐冷し、見
かけのチルト角θa が26°の均一配向を得た。上記均
一配向状態で、10V/μmの単発パルスをパルス幅Δ
Tを変化させて印加し、黒状態から白状態への変化する
過程を透過光量で測定した。この時、黒状態の透過光量
を0%、白状態を100%としたグラフが図8である。
しきい値の急峻性をγ=ΔTsat /ΔTthとすると、F
LC3はγ≒2.04,FLC2はγ≒1.15とな
り、階調性はらせんピッチの短いFLC3の方が、有利
であることが分かる。ここでΔTsat は透過光量が10
0%になった時のパルス幅、ΔTthは透過光量が0%か
ら立ち上がった時のパルス幅である。The above-mentioned FLCs 2 and 3 were placed in the cell under reduced pressure at 80
The temperature was raised to ° C and the mixture was injected by capillarity. After cooling, the alignment was observed at room temperature using a polarizing microscope.
C2 had almost no zigzag defects and had a pale white state and a black state. FLC3 had a pale black and white state in which the extinction position was slightly shifted. Therefore, FLC2 applies ± 20 V / μm at 30 ° C. and 10 Hz for 5 minutes to change the texture to obtain uniform orientation with an apparent tilt angle θ a of 19.5 °, and FLC3 ± 70 V from 70 ° C. to 30 ° C.
/ Μm, while gradually cooling while applying an alternating electric field of 10 Hz, a uniform orientation with an apparent tilt angle θ a of 26 ° was obtained. In the above uniform alignment state, a single pulse of 10 V / μm is applied to the pulse width Δ
T was changed and applied, and the process of changing from the black state to the white state was measured by the amount of transmitted light. At this time, FIG. 8 is a graph in which the transmitted light amount in the black state is 0% and the white state is 100%.
If the steepness of the threshold is γ = ΔT sat / ΔT th , then F
LC3 is γ≈2.04 and FLC2 is γ≈1.15, and it can be seen that the gradation is more advantageous for FLC3 having a short spiral pitch. Here, ΔT sat is a transmitted light amount of 10
The pulse width when 0% is reached, and ΔT th is the pulse width when the amount of transmitted light rises from 0%.
【0032】(実施例3)透明電極の付いたガラス基板
上に、日産化学社製のポリアミド酸サンエバーSE10
0の0.4%NMP/nBC=2/1溶液をスピンコー
トし、90℃で5分間前乾燥した後、200℃で1時間
焼成した。この時、配向膜厚は30Åであった。次に、
この基板を押込み0.4(mm),回転数1000(r
pm),送り速度12(mm/s)×1回の条件でナイ
ロン布でラビングした。Example 3 On a glass substrate having a transparent electrode, a polyamic acid sun ever SE10 manufactured by Nissan Chemical Co., Ltd.
0.4% NMP / nBC = 2/1 solution of 0 was spin-coated, pre-dried at 90 ° C. for 5 minutes, and then baked at 200 ° C. for 1 hour. At this time, the orientation film thickness was 30Å. next,
Push in this substrate 0.4 (mm), rotation speed 1000 (r
pm) and a feed rate of 12 (mm / s) × 1 time, and rubbing with a nylon cloth.
【0033】この後、1.5μmのギャップを保ってラ
ビング方向が平行になるように貼り合わせてセルを作成
した。該セルのプレチルト角はクリスタルローテーショ
ン法で測定され1.3°であった。該セルにFLC1〜
4を注入し、±7V/μm,10Hzの矩形波を30℃
で5分間印加したところ、FLC1はわずかにかすり状
の配向が現れθa=8〜17°とムラがあった。FLC
2は、かすり状配向とストライプ状配向が存在し、θa
=17〜19°、FLC3とFLC4はストライプ状配
向となりそれぞれθa=25.5°、26°であった。
このことからPsが大きいほうが、AC処理によってθ
a≒Θとなりやすいことが分かる。Thereafter, a cell was prepared by laminating the gaps of 1.5 μm so that the rubbing directions were parallel to each other. The pretilt angle of the cell was 1.3 ° as measured by the crystal rotation method. FLC1 to the cell
4 is injected and a square wave of ± 7 V / μm, 10 Hz is applied at 30 ° C.
When applied for 5 minutes, the FLC1 showed a slight scratch-like orientation and had unevenness of θa = 8 to 17 °. FLC
No. 2 has a haze-like orientation and a stripe-like orientation, and θa
= 17 to 19 °, and FLC3 and FLC4 had a stripe-like orientation and θa = 25.5 ° and 26 °, respectively.
Therefore, the larger Ps is, the more θ
It can be seen that a is likely to be Θ.
【0034】(比較例1)ラビング方向を反平行に貼り
合わせる以外は実施例1と同一の処理を施した素子の交
流電場印加前の配向状態を観察したところ、ジグザグ欠
陥が多数観察された。この状態に±20V/μm、10
Hzの交流電場を30℃で5分間印加し、テクスチャー
変化させたところ、見かけのチルト角θa は8°から1
9°に広がっていたが、ジグザグ欠陥が存在した箇所に
三角状のテクスチャーが残り、均一配向にはならなかっ
た。(Comparative Example 1) A lot of zigzag defects were observed by observing the alignment state of the element which was subjected to the same treatment as that of Example 1 except that the rubbing directions were bonded in antiparallel to each other before the application of an alternating electric field. ± 20 V / μm in this state, 10
When an alternating electric field of Hz was applied for 5 minutes at 30 ° C. and the texture was changed, the apparent tilt angle θ a was 8 ° to 1
Although it was spread over 9 °, a triangular texture remained at the place where the zigzag defect was present, and uniform alignment was not obtained.
【0035】[0035]
【発明の効果】以上説明の様に、本発明によれば、パネ
ル面内でムラのない、階調性に優れ、スイッチング不良
も防止した強誘電性液晶素子を得ることができる。As described above, according to the present invention, it is possible to obtain a ferroelectric liquid crystal element having no unevenness in the panel surface, excellent gradation, and preventing switching failure.
【図1】本発明の強誘電性液晶セルの一例を示す模式
図。FIG. 1 is a schematic view showing an example of a ferroelectric liquid crystal cell of the present invention.
【図2】液晶と基板界面での傾き方向を示す図。FIG. 2 is a diagram showing a tilt direction at a liquid crystal / substrate interface.
【図3】本発明の液晶素子の交流印加前の配向状態
(1)を示す図。FIG. 3 is a diagram showing an alignment state (1) of the liquid crystal device of the present invention before application of an alternating current.
【図4】本発明の液晶素子の交流印加後の配向状態
(2)を示す図。FIG. 4 is a diagram showing an alignment state (2) of the liquid crystal element of the present invention after application of an alternating current.
【図5】図3の配向状態におけるX線プロファイルを示
す図。5 is a diagram showing an X-ray profile in the orientation state of FIG.
【図6】図4の配向状態におけるX線プロファイルを示
す図。6 is a diagram showing an X-ray profile in the orientation state of FIG.
【図7】本発明の液晶素子の透過光特性を表わす図。FIG. 7 is a diagram showing transmitted light characteristics of the liquid crystal element of the present invention.
【図8】FLC2とFLC3のT−ΔT特性を示すグラ
フ。FIG. 8 is a graph showing T-ΔT characteristics of FLC2 and FLC3.
11 基板 12 透明電極 13 配向制御膜 14 強誘電性液晶 15 ビーズスペーサー 16 偏光板 A 一軸性配向処理方向 11 substrate 12 transparent electrode 13 alignment control film 14 ferroelectric liquid crystal 15 bead spacer 16 polarizing plate A uniaxial alignment treatment direction
Claims (9)
に保持して対向するとともにその対向面にはそれぞれ強
誘電性液晶に電圧を印加するための電極が形成されかつ
強誘電性液晶を配向するための一軸性配向処理が施され
た一対の基板を備え、交流を印加する処理によってみか
けのチルト角が、交流を印加しない場合より大きくされ
ている液晶素子において、その液晶と基板界面での傾き
方向が上下の基板間で逆方向でプレチルト角が5°未満
であり、その強誘電性液晶の自発分極が25nC/cm
2 以上であることを特徴とする強誘電性液晶素子。1. A ferroelectric liquid crystal and a ferroelectric liquid crystal which face each other with the ferroelectric liquid crystal held therebetween, and electrodes for applying a voltage to the ferroelectric liquid crystal are formed on the opposing surfaces, respectively. In a liquid crystal element, which comprises a pair of substrates that have been subjected to a uniaxial alignment treatment for aligning the liquid crystal, and the apparent tilt angle by the treatment of applying an alternating current is larger than that when no alternating current is applied, the liquid crystal and the substrate The tilt direction at the interface is opposite between the upper and lower substrates, the pretilt angle is less than 5 °, and the spontaneous polarization of the ferroelectric liquid crystal is 25 nC / cm.
A ferroelectric liquid crystal device characterized by being 2 or more.
の膜厚が5nm以下であることを特徴とする請求項1記
載の強誘電性液晶素子。2. The ferroelectric liquid crystal element according to claim 1, wherein the thickness of the alignment control film for the uniaxial alignment treatment is 5 nm or less.
ックC相の螺旋ピッチが1μm以下であることを特徴と
する請求項1記載の強誘電性液晶素子。3. The ferroelectric liquid crystal device according to claim 1, wherein the spiral pitch of the chiral smectic C phase of the ferroelectric liquid crystal is 1 μm or less.
/cm2 以上であることを特徴とする請求項1記載の強
誘電性液晶素子。4. The spontaneous polarization of the ferroelectric liquid crystal is 50 nC.
/ Cm 2 or more, the ferroelectric liquid crystal element according to claim 1.
に保持して対向するとともにその対向面にはそれぞれ強
誘電性液晶に電圧を印加するための電極が形成されかつ
強誘電性液晶を配向するための一軸性配向処理が施され
た一対の基板を備え、交流を印加する処理によってみか
けのチルト角が、交流を印加しない場合より大きくされ
ている液晶素子において、その一軸性配向処理としての
ラビングが上下の基板で平行かつ同一方向でプレチルト
角が5°未満であり、その強誘電性液晶の自発分極が2
5nC/cm2 以上であることを特徴とする強誘電性液
晶素子。5. The ferroelectric liquid crystal and the ferroelectric liquid crystal are opposed to each other with the ferroelectric liquid crystal held therebetween, and electrodes for applying a voltage to the ferroelectric liquid crystal are formed on the opposed surfaces, respectively. A uniaxial alignment in a liquid crystal element that has a pair of substrates that have been subjected to a uniaxial alignment treatment for aligning liquid crystals and has a larger apparent tilt angle due to the treatment of applying an alternating current than that when no alternating current is applied. The rubbing as a treatment is parallel between the upper and lower substrates, the pretilt angle is less than 5 ° in the same direction, and the spontaneous polarization of the ferroelectric liquid crystal is 2
A ferroelectric liquid crystal device characterized by having 5 nC / cm 2 or more.
膜厚が5nm以下であることを特徴とする請求項5記載
の強誘電性液晶素子。6. The ferroelectric liquid crystal device according to claim 5, wherein the thickness of the alignment control film for the uniaxial alignment treatment is 5 nm or less.
ックC相の螺旋ピッチが1μm以下であることを特徴と
する請求項5記載の強誘電性液晶素子。7. The ferroelectric liquid crystal device according to claim 5, wherein the spiral pitch of the chiral smectic C phase of the ferroelectric liquid crystal is 1 μm or less.
/cm2 以上であることを特徴とする請求項5記載の強
誘電性液晶素子。8. The spontaneous polarization of the ferroelectric liquid crystal is 50 nC.
6. The ferroelectric liquid crystal element according to claim 5, wherein the ferroelectric liquid crystal element has a density of / cm 2 or more.
る層法線の異なる層を有しており、それが、規則正しく
交互にストライプ状に配置されている請求項1又は5記
載の強誘電性液晶素子。9. The ferroelectric liquid crystal structure according to claim 1, wherein the ferroelectric liquid crystal alignment state has two different layers having different layer normals, and the layers are arranged regularly and alternately in a stripe pattern. Liquid crystal element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35478392A JPH06186568A (en) | 1992-12-17 | 1992-12-17 | Ferroelectric liquid crystal device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35478392A JPH06186568A (en) | 1992-12-17 | 1992-12-17 | Ferroelectric liquid crystal device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06186568A true JPH06186568A (en) | 1994-07-08 |
Family
ID=18439880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35478392A Withdrawn JPH06186568A (en) | 1992-12-17 | 1992-12-17 | Ferroelectric liquid crystal device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06186568A (en) |
-
1992
- 1992-12-17 JP JP35478392A patent/JPH06186568A/en not_active Withdrawn
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