JPH06186588A - Liquid crystal display device - Google Patents
Liquid crystal display deviceInfo
- Publication number
- JPH06186588A JPH06186588A JP33749192A JP33749192A JPH06186588A JP H06186588 A JPH06186588 A JP H06186588A JP 33749192 A JP33749192 A JP 33749192A JP 33749192 A JP33749192 A JP 33749192A JP H06186588 A JPH06186588 A JP H06186588A
- Authority
- JP
- Japan
- Prior art keywords
- driver
- interlayer insulating
- thin film
- insulating film
- liquid crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 13
- 239000010408 film Substances 0.000 claims abstract description 26
- 239000011229 interlayer Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 239000000853 adhesive Substances 0.000 claims description 15
- 230000001070 adhesive effect Effects 0.000 claims description 15
- 229920001721 polyimide Polymers 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000009719 polyimide resin Substances 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 8
- 239000004642 Polyimide Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
(57)【要約】
【目的】 有機薄膜を用いた層間絶縁膜上に画素電極を
形成した液晶表示装置に於いて、ドライバーの信頼性を
低下させる事無く対向基板間距離を一定に保ち、かつ基
板の小型化を図る事を目的とする。
【構成】 有機薄膜上に画素電極を形成し、同時にドラ
イバーを形成したシール部にも有機薄膜を形成する。
(57) [Abstract] [Purpose] In a liquid crystal display device in which a pixel electrode is formed on an interlayer insulating film using an organic thin film, the distance between opposing substrates is kept constant without decreasing the reliability of the driver, and The purpose is to reduce the size of the board. [Structure] A pixel electrode is formed on an organic thin film, and at the same time, an organic thin film is formed on a seal portion where a driver is formed.
Description
【0001】[0001]
【産業上の利用分野】本発明は液晶表示装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device.
【0002】[0002]
【従来の技術】有機薄膜上に画素電極を形成したことを
特徴とする従来例としては、特公平1−35351号の
ようなものが上げられる。この例では画素電極としてア
ルミニウムを用い、反射型液晶表示装置の構成としてい
る。2. Description of the Related Art As a conventional example characterized in that a pixel electrode is formed on an organic thin film, Japanese Patent Publication No. 1-35351 can be cited. In this example, aluminum is used as the pixel electrode to form a reflective liquid crystal display device.
【0003】また一般にドライバーをアクティブマトリ
クス基板に内蔵する場合、特開昭64−68725号の
ごとくドライバーは基板間の接着部(以下シール部と称
する)よりも画素部に対して外側に配置され、かつドラ
イバーの耐湿性向上のためポリイミド等の有機樹脂膜で
封止してある。In general, when a driver is built in an active matrix substrate, the driver is arranged outside the adhesive portion (hereinafter referred to as a seal portion) between the substrates with respect to the pixel portion as in JP-A-64-68725. Moreover, in order to improve the moisture resistance of the driver, it is sealed with an organic resin film such as polyimide.
【0004】接着部の構成に関しては、図4に示すが、
一般に対向する基板間距離を一定に保つためのギャップ
材と呼ばれる直径数μmの小球を画素部及び接着部に散
布している。この時画素部と接着部とでギャップ材の直
径を変化させる事もある。FIG. 4 shows the structure of the adhesive portion.
Generally, small spheres having a diameter of several μm called a gap material for keeping a constant distance between opposing substrates are scattered on the pixel portion and the adhesive portion. At this time, the diameter of the gap material may be changed between the pixel portion and the adhesive portion.
【0005】[0005]
【発明が解決しようとする課題】接着部の構造に関し、
前記従来例では画素部と接着部の基板間距離が極端に異
なる場合、画素部と接着部の境界近傍では一定の基板間
距離を維持する事が困難であると言う課題を有する。With respect to the structure of the adhesive portion,
The conventional example has a problem that it is difficult to maintain a constant substrate distance in the vicinity of the boundary between the pixel portion and the adhesive portion when the distance between the pixel portion and the adhesive portion is extremely different.
【0006】またドライバーが外側に配置されていると
ドライバー用のスペースが必要であり、結果として基板
面積の増大を招くと言う課題も有する。Further, if the driver is arranged outside, a space for the driver is required, and as a result, there is a problem that the area of the substrate is increased.
【0007】本発明の目的は、ドライバーの信頼性を低
下させる事無く、セルギャップの均一性を確保する事
と、省スペース化の出来る液晶表示装置の構造を提供す
る事にある。An object of the present invention is to provide a structure of a liquid crystal display device which can secure a uniform cell gap without reducing the reliability of a driver and can save space.
【0008】[0008]
【課題を解決するための手段】本発明は、ドライバー内
蔵アクティブマトリクス方式の液晶表示装置において、
アクティブマトリクス基板はソース線と画素電極がポリ
イミド樹脂あるいは酸化シリコンあるいは窒化シリコン
等の層間絶縁膜を介して非同一層に形成されてあること
と、ドライバーは対向する2枚の基板の接着部に形成す
ることと、前記層間絶縁膜は前記接着部のドライバー上
にも形成することと、ドライバー上の層間絶縁膜上には
ITOなどの導電性薄膜を形成することと、前記導電性
薄膜は共通電位にすることと、対向基板の接着部にも導
電性薄膜を形成することを特徴とする。The present invention provides an active matrix type liquid crystal display device with a built-in driver,
In the active matrix substrate, the source line and the pixel electrode are formed in a non-same layer through an interlayer insulating film such as polyimide resin, silicon oxide or silicon nitride, and the driver is formed in the bonding portion of the two substrates facing each other. And that the interlayer insulating film is formed also on the driver of the adhesive portion, a conductive thin film such as ITO is formed on the interlayer insulating film on the driver, and the conductive thin film has a common potential. And forming a conductive thin film also on the bonding portion of the counter substrate.
【0009】[0009]
【実施例】本発明による一実施例の液晶表示装置の平面
図を図1に示し、そのX−X’間における断面図を図2
に示す。例えばガラス基板の様な絶縁性基板101上に
画素スイッチング用TFT(以下画素TFTと称す)1
02を形成し、同時に前記画素TFT群の駆動用TFT
(以下ドライバーと称す)103を形成する。次に層間
絶縁膜104として例えばポリイミドを2μm程度の膜
厚となるように塗布する。前記ポリイミドを乾燥後、ク
ロム薄膜を1000Å程度堆積し、パターニングしてエ
ッチングマスク105とする。この後ドライエッチング
法にて層間絶縁膜104をパターニングする。このとき
層間絶縁膜104の被エッチング部分は、画素TFTの
画素電極接続部と、対向基板との接着部110(以下シ
ール部と称す)より外側部分とする。エッチング終了後
エッチングマスク105を剥離し、画素電極106をI
TOで形成する。このときシール部110にもITOを
形成して、共通電位にしておく。次に絶縁性基板101
と対向基板107をシール部110で接着するがその際
ギャップ材を混入した接着剤で接着する。最後にギャッ
プ材を混入した液晶を封入する。1 is a plan view of a liquid crystal display device according to an embodiment of the present invention, and FIG. 2 is a sectional view taken along line XX '.
Shown in. A pixel switching TFT (hereinafter referred to as a pixel TFT) 1 is formed on an insulating substrate 101 such as a glass substrate.
02 is formed at the same time, and at the same time, a driving TFT for the pixel TFT group
(Hereinafter referred to as driver) 103 is formed. Next, as the interlayer insulating film 104, for example, polyimide is applied so as to have a film thickness of about 2 μm. After the polyimide is dried, a chrome thin film of about 1000 Å is deposited and patterned to form an etching mask 105. After that, the interlayer insulating film 104 is patterned by the dry etching method. At this time, the portion to be etched of the interlayer insulating film 104 is located outside the pixel electrode connection portion of the pixel TFT and the adhesion portion 110 (hereinafter referred to as a seal portion) with the counter substrate. After the etching is completed, the etching mask 105 is peeled off, and the pixel electrode 106
Formed by TO. At this time, ITO is also formed on the seal portion 110 to keep it at a common potential. Next, the insulating substrate 101
The opposite substrate 107 and the counter substrate 107 are adhered to each other at the seal portion 110, but at this time, they are adhered to each other with an adhesive containing a gap material. Finally, the liquid crystal mixed with the gap material is sealed.
【0010】以上の実施例ではエッチングマスクとして
クロムを用いたが、エッチングマスクになるものなら例
えば窒化ケイ素膜や二酸化ケイ素膜のような別の材料で
もかまわない。Although chromium is used as the etching mask in the above embodiments, another material such as a silicon nitride film or a silicon dioxide film may be used as long as it serves as an etching mask.
【0011】さらにエッチングマスクの除去は必ずしも
必要ではなく、エッチングマスクを介して層間絶縁膜の
上層に画素電極を形成する事も可能である。この場合エ
ッチングマスク剥離工程の削除を伴うので、層間絶縁膜
へのダメージを更に低減できる。またエッチングマスク
のパターニング後、フォトレジストの剥離を行うと層間
絶縁膜104のエッチング時に、エッチングマスクがエ
ッチングガスに曝されてダメージを受け易くなるため、
前記フォトレジストは剥離しないまま層間絶縁膜のエッ
チングを行うのが望ましい。Further, it is not always necessary to remove the etching mask, and it is possible to form the pixel electrode on the upper layer of the interlayer insulating film through the etching mask. In this case, since the etching mask removing step is omitted, damage to the interlayer insulating film can be further reduced. Further, if the photoresist is removed after the patterning of the etching mask, the etching mask is exposed to the etching gas and is easily damaged when the interlayer insulating film 104 is etched.
It is desirable to etch the interlayer insulating film without removing the photoresist.
【0012】また画素電極も例えばアルミニウムが使え
るなどITOには限らない。The pixel electrode is not limited to ITO, for example, aluminum can be used.
【0013】以上が本発明の一実施例であるが、シール
部110にも層間絶縁膜104が形成されているため画
素部112とシール部110の段差は殆ど無い。従って
シール部のギャップ材と画素部のギャップ材を変更する
必要がなく、セルギャップの均一性制御が容易になる。The above is one embodiment of the present invention, but since the interlayer insulating film 104 is formed also in the seal part 110, there is almost no step between the pixel part 112 and the seal part 110. Therefore, it is not necessary to change the gap material of the seal portion and the gap material of the pixel portion, and it becomes easy to control the uniformity of the cell gap.
【0014】同時にドライバー103はシール部110
にあるためわざわざドライバー用のスペースを確保する
必要がなく省スペース化がはかれる。さらにドライバー
103上の層間絶縁膜104を除去せずに済むためドラ
イバーはエッチングによるダメージを受けない。また従
来の構造では最終的にポリイミドでドライバーを封止す
る必要があったが本発明を用いるとすでに層間絶縁膜1
04で覆われているのでさらなる封止は不必要となる。At the same time, the driver 103 has a seal portion 110.
Therefore, it is not necessary to reserve a space for the driver, so the space can be saved. Further, since the interlayer insulating film 104 on the driver 103 does not have to be removed, the driver is not damaged by etching. Further, in the conventional structure, it was necessary to finally seal the driver with polyimide, but when the present invention is used, the interlayer insulating film 1 is already formed.
Being covered with 04, no further sealing is necessary.
【0015】またITOなどの導電性薄膜112がドラ
イバー上の層間絶縁膜104上に存在し、導電性薄膜1
12は対向電極109と同電位にしてあるため接着剤や
有機薄膜の分極によるドライバーの信頼性低下を招かな
い。A conductive thin film 112 such as ITO exists on the interlayer insulating film 104 on the driver, and the conductive thin film 1
Since 12 has the same potential as the counter electrode 109, the reliability of the driver is not deteriorated due to the polarization of the adhesive or the organic thin film.
【0016】さらに共通電位に落とされている対向電極
がシール部接着剤を介してドライバー上に位置的に重な
っていることにより、電場シールド効果が増す。従って
外部電場がかかってもドライバーやドライバー周辺の配
線への悪影響は低減可能であり、結果として表示品質へ
の影響は少なくなる。Further, since the counter electrode, which has been dropped to the common potential, is positioned on the driver through the adhesive of the seal portion, the electric field shielding effect is enhanced. Therefore, even if an external electric field is applied, the adverse effect on the driver and the wiring around the driver can be reduced, and as a result, the influence on the display quality is reduced.
【0017】[0017]
【発明の効果】本発明を用いれば、ドライバーはシール
部にあるため省スペース化が図れる。さらにドライバー
上には画素部と共に同じ膜厚の層間絶縁膜を形成するた
め、画素部とシール部の段差は殆どなく、従って画素部
とシール部のギャップ材径が同一となるためセルギャッ
プの均一性が向上する。According to the present invention, the driver can be saved in the space because it is located in the seal portion. Further, since the interlayer insulating film having the same film thickness is formed on the driver together with the pixel portion, there is almost no step between the pixel portion and the seal portion. Therefore, since the gap material diameters of the pixel portion and the seal portion are the same, the cell gap is uniform The property is improved.
【0018】またドライバーは層間絶縁膜上の共通電位
になっている導電性薄膜にも保護されているため、外部
電場による悪影響も低減できる。Since the driver is also protected by the conductive thin film having a common potential on the interlayer insulating film, the adverse effect of the external electric field can be reduced.
【図1】 実施例記載の液晶表示装置の平面図。FIG. 1 is a plan view of a liquid crystal display device described in an embodiment.
【図2】 実施例記載の液晶表示装置のX−X’間に於
ける断面図。FIG. 2 is a cross-sectional view taken along line XX ′ of the liquid crystal display device described in the embodiment.
【図3】 実施例の工程を表す断面図。FIG. 3 is a cross-sectional view showing a process of an example.
【図4】 従来例の液晶表示装置の断面図。FIG. 4 is a cross-sectional view of a conventional liquid crystal display device.
101 ガラス基板 102 画素TFT 103 ドライバー 104 層間絶縁膜 105 エッチングマスク 106 画素電極 107 対向基板 108 接着剤 109 対向電極 110 シール部 111 画素部 112 導電性薄膜 101 glass substrate 102 pixel TFT 103 driver 104 interlayer insulating film 105 etching mask 106 pixel electrode 107 counter substrate 108 adhesive 109 counter electrode 110 seal part 111 pixel part 112 conductive thin film
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01L 29/784 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H01L 29/784
Claims (1)
式の液晶表示装置において、アクティブマトリクス基板
はソース線と画素電極がポリイミド樹脂あるいは酸化シ
リコンあるいは窒化シリコン等の層間絶縁膜を介して非
同一層に形成され、ドライバーは対向する2枚の基板の
接着部に形成され、前記層間絶縁膜は前記接着部のドラ
イバー上にも形成され、ドライバー上の層間絶縁膜上に
はITOなどの導電性薄膜が形成され、前記導電性薄膜
は共通電位され、対向基板の接着部にも導電性薄膜が形
成されることを特徴とする液晶表示装置。1. In an active matrix type liquid crystal display device with a built-in driver, a source line and a pixel electrode of an active matrix substrate are formed in a non-same layer through an interlayer insulating film such as polyimide resin or silicon oxide or silicon nitride. Is formed on an adhesive portion of two substrates facing each other, the interlayer insulating film is also formed on a driver of the adhesive portion, and a conductive thin film such as ITO is formed on the interlayer insulating film on the driver. The liquid crystal display device is characterized in that the conductive thin film is applied with a common potential, and the conductive thin film is also formed on the adhesive portion of the counter substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33749192A JPH06186588A (en) | 1992-12-17 | 1992-12-17 | Liquid crystal display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33749192A JPH06186588A (en) | 1992-12-17 | 1992-12-17 | Liquid crystal display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06186588A true JPH06186588A (en) | 1994-07-08 |
Family
ID=18309153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33749192A Pending JPH06186588A (en) | 1992-12-17 | 1992-12-17 | Liquid crystal display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06186588A (en) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100315208B1 (en) * | 1999-12-17 | 2001-11-26 | 구본준, 론 위라하디락사 | Liquid Crystal Display Device and Method of Fabricating the Same |
| KR100315209B1 (en) * | 1999-12-17 | 2001-11-29 | 구본준, 론 위라하디락사 | Liquid Crystal Display Device and Method of Fabricating the Same |
| KR100437837B1 (en) * | 2001-12-29 | 2004-06-30 | 엘지.필립스 엘시디 주식회사 | A Liquid Crystal Display Device And The Method For Manufacturing The Same |
| KR100448902B1 (en) * | 1996-05-16 | 2004-12-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Display device |
| KR100488310B1 (en) * | 1996-06-25 | 2005-05-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | A liquid crystal display panel |
| KR100559761B1 (en) * | 1996-06-25 | 2006-03-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Electronic device with liquid crystal display device |
| JP2006189777A (en) * | 2004-12-31 | 2006-07-20 | Lg Philips Lcd Co Ltd | Liquid crystal display device and manufacturing method thereof |
| JP2007212817A (en) * | 2006-02-10 | 2007-08-23 | Seiko Epson Corp | ELECTRO-OPTICAL DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE |
| US7298447B1 (en) | 1996-06-25 | 2007-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display panel |
| JP2009151316A (en) * | 1996-10-22 | 2009-07-09 | Seiko Epson Corp | Liquid crystal panel, electronic device using the same, and projection display device |
| US7898632B2 (en) | 2005-12-28 | 2011-03-01 | Seiko Epson Corporation | Electro-optical device, manufacturing method thereof, and electronic apparatus |
| US8107049B2 (en) | 1996-10-22 | 2012-01-31 | Seiko Epson Corporation | Liquid crystal panel substrate, liquid crystal panel, and electronic device and projection display device using the same |
| JP2012234213A (en) * | 2012-09-03 | 2012-11-29 | Semiconductor Energy Lab Co Ltd | Liquid crystal display device |
| JP2013200573A (en) * | 2013-06-05 | 2013-10-03 | Semiconductor Energy Lab Co Ltd | Liquid crystal display device |
| US8665411B2 (en) | 1995-12-21 | 2014-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device having particular conductive layer |
| JP2014063153A (en) * | 2012-08-28 | 2014-04-10 | Semiconductor Energy Lab Co Ltd | Display device, and electronic device |
-
1992
- 1992-12-17 JP JP33749192A patent/JPH06186588A/en active Pending
Cited By (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8665411B2 (en) | 1995-12-21 | 2014-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device having particular conductive layer |
| US9316880B2 (en) | 1995-12-21 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| KR100448902B1 (en) * | 1996-05-16 | 2004-12-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Display device |
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