JPH06195753A - Optical data recording medium - Google Patents
Optical data recording mediumInfo
- Publication number
- JPH06195753A JPH06195753A JP4358182A JP35818292A JPH06195753A JP H06195753 A JPH06195753 A JP H06195753A JP 4358182 A JP4358182 A JP 4358182A JP 35818292 A JP35818292 A JP 35818292A JP H06195753 A JPH06195753 A JP H06195753A
- Authority
- JP
- Japan
- Prior art keywords
- film
- recording medium
- reflectance
- optical data
- data recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Optical Record Carriers And Manufacture Thereof (AREA)
- Optical Recording Or Reproduction (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、光を利用して情報を記
録等することが可能な光情報記録媒体に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical information recording medium capable of recording information using light.
【0002】[0002]
【従来技術】従来、再生専用の光情報記録媒体として
は、コンパクトディスク(以下、CDという)が広く普
及しており知られている。又、書き換え可能な光情報記
録媒体としては、光照射により結晶状態を可逆的変化、
つまり、非晶質−結晶質間で相転移させ、それに伴って
生じる反射率の変化を利用する相変化型が知られてい
る。2. Description of the Related Art Conventionally, compact discs (hereinafter referred to as CDs) have been widely spread and known as read-only optical information recording media. Further, as a rewritable optical information recording medium, the crystalline state is reversibly changed by light irradiation,
In other words, a phase change type is known in which a phase transition is made between amorphous and crystalline and the change in reflectance caused by the phase transition is utilized.
【0003】[0003]
【発明が解決しようとする課題】ところで、光情報記録
媒体に要求される性能としては、消去状態部分の反射率
が65%以上、更に、C/N(キャリヤ信号レベル/ノイ
ズレベル)比が47dB以上の信号強度を有することが必
要である。上記C/N比が大きい程、記録情報の再生段
階での読み取りエラーを少なくできるのである。上記C
/N比を大きくするためには、再生時における光情報記
録媒体の記録膜の記録状態部分と消去状態部分との反射
率の差を大きくすれば良い。ここで、(振幅変調度)=
{(消去状態部分の反射率)−(記録状態部分の反射
率)}/(消去状態部分の反射率)にて表される。即
ち、ノイズレベルが同じであるならば、光情報記録媒体
においてC/N比を改善するには振幅変調度を大きくす
れば良いのである。発明者らは、光情報記録媒体の基板
表面における光反射により記録状態部分の反射率が不必
要に高くなっていることに着目することにより、光情報
記録媒体の振幅変調度を大きくしてC/N比を改善でき
ることを見出したのである。By the way, as the performance required for the optical information recording medium, the reflectance in the erased state portion is 65% or more, and the C / N (carrier signal level / noise level) ratio is 47 dB. It is necessary to have the above signal strength. The larger the C / N ratio, the smaller the read error at the reproduction stage of the recorded information. C above
In order to increase the / N ratio, the difference in reflectance between the recorded state portion and the erased portion of the recording film of the optical information recording medium during reproduction may be increased. Where (amplitude modulation degree) =
It is represented by {(reflectance of erased portion)-(reflectance of recorded portion)} / (reflectance of erased portion). That is, if the noise level is the same, the amplitude modulation degree may be increased in order to improve the C / N ratio in the optical information recording medium. The inventors noticed that the reflectance of the recording state portion became unnecessarily high due to the light reflection on the substrate surface of the optical information recording medium, thereby increasing the amplitude modulation degree of the optical information recording medium to C It has been found that the / N ratio can be improved.
【0004】本発明は、上記の課題を解決するために成
されたものであり、その目的とするところは、光情報記
録媒体において振幅変調度を大きくしてC/N比を改善
することである。The present invention has been made to solve the above problems, and an object thereof is to increase the amplitude modulation degree in an optical information recording medium to improve the C / N ratio. is there.
【0005】[0005]
【課題を解決するための手段】上記課題を解決するため
の発明の構成は、基板上に下層保護膜、記録膜、上層保
護膜を順次形成した光情報記録媒体において、前記記録
膜が形成された側と反対側の前記基板表面上に該基板の
屈折率と異なる透明な単層膜又は前記基板の屈折率と異
なると共に互いに屈折率の異なる透明な多層膜から成る
反射防止膜を備えたことを特徴とする。The structure of the invention for solving the above problems is an optical information recording medium in which a lower protective film, a recording film, and an upper protective film are sequentially formed on a substrate, and the recording film is formed. An antireflection film formed on the surface of the substrate on the opposite side to a transparent single-layer film having a refractive index different from that of the substrate or a transparent multilayer film having a refractive index different from that of the substrate and different from each other. Is characterized by.
【0006】[0006]
【作用及び効果】上記の手段によれば、光情報記録媒体
は反射防止膜により照射される光の基板表面における反
射をなくすことができる。これにより、光情報記録媒体
はその基板内にほぼ 100%の光が入射されることとな
る。記録膜の記録状態部分又は消去状態部分では反射率
が異なっており、各部分における反射光量は基板表面か
ら入射する光の増量分も含めた光量にそれぞれの反射率
を乗じたものとなる。ここで、反射防止膜を設けない基
板表面の反射率をr1,反射防止膜を設けた基板表面の反
射率をr2 とし、記録膜の記録状態部分又は消去状態部
分の反射率をRとする。すると、記録膜の記録状態部分
又は消去状態部分の反射率Rの部分において、基板表面
の反射率がr1 からr2 に変化したときの反射率の変化
は近似的に次式にて表される。According to the above means, the optical information recording medium can eliminate the reflection of the light emitted by the antireflection film on the substrate surface. As a result, almost 100% of the light is incident on the substrate of the optical information recording medium. The reflectance differs between the recording state portion and the erasing state portion of the recording film, and the reflected light amount at each portion is the light amount including the increased amount of light incident from the substrate surface multiplied by each reflectance. Here, the reflectance of the substrate surface without the antireflection film is r 1, the reflectance of the substrate surface with the antireflection film is r 2, and the reflectance of the recording state portion or the erasing state portion of the recording film is R. To do. Then, in the portion of the reflectance R of the recording state portion or the erasing state portion of the recording film, the change of the reflectance when the reflectance of the substrate surface changes from r 1 to r 2 is approximately expressed by the following equation. It
【数1】{R(1−r2)+r2}−{R(1−r1)+r1} =−(1−R)(r1−r2) 上式より、記録膜の記録状態部分又は消去状態部分のう
ち反射率Rが低い部分程、反射率のマイナス側への変化
が大きくなることが分かる。このため、本発明の光情報
記録媒体は記録膜の記録状態部分又は消去状態部分のう
ち反射率の高い部分の反射率を低下させることなく記録
膜の記録状態部分又は消去状態部分のうち反射率の低い
部分の反射率を低下できるのである。即ち、本発明の光
情報記録媒体は結果として振幅変調度を大きくできC/
N比が改善されて読み取りエラーが少なくなる。[Number 1] {R (1-r 2) + r 2} - {R (1-r 1) + r 1} = - (1-R) (r 1 -r 2) from the above equation, the recording state of the recording film It can be seen that the lower the reflectance R of the portion or the erased portion, the greater the change in reflectance to the negative side. Therefore, the optical information recording medium of the present invention can reflect the reflectance of the recording state portion or the erasing state portion of the recording film without lowering the reflectance of the recording state portion or the erasing state portion of the recording film. It is possible to reduce the reflectance of the low part. That is, the optical information recording medium of the present invention can increase the amplitude modulation degree as a result, and C /
The N ratio is improved and the reading error is reduced.
【0007】[0007]
【実施例】以下、本発明を具体的な実施例に基づいて説
明する。図1は本発明に係る光情報記録媒体の断面構造
を示した模式図である。光情報記録媒体10は書き換え
可能な光情報記録媒体であり、例えば、円盤状の透明な
ガラス又はプラスチックから成る基板1上に順次、以下
の膜が積層され形成されている。ポリカーボネイト(屈
折率1.58)から成る基板1面のうち、プリグルーブ(光
ピックアップによるトラッキングのための反射率の低い
部分)の形成された面上に、下層保護膜として多層下層
保護膜2を形成した。この多層下層保護膜2は、波長(
再生波長780nm,記録消去波長830nm)の異なる2つの光に
対して透明で隣同士で屈折率の異なる4層を積層した。
上記多層下層保護膜2は、TiO2(屈折率2.5)から成る
下層保護膜(I) 2aを厚さ80nm、SiO2(屈折率1.46)
から成る下層保護膜(II)2bを厚さ 110nm、TiO2から
成る下層保護膜(III) 2cを厚さ 260nmにてそれぞれ成
膜した。これらの膜はスパッタリング法又は真空蒸着法
(抵抗加熱法、電子ビーム法、イオンプレーティング
法)により成膜した。これらの材料ソースであるターゲ
ットにはそれぞれTiO2,SiO2を用いた。尚、TiO2
はTi を酸素雰囲気中で蒸着し反応させて成膜しても良
い。更に、ZnS-SiO2(屈折率2.0)から成る下層保護
膜(IV)2dを厚さ 250nmにて成膜した。この膜も同じく
スパッタリング法又は真空蒸着法により成膜するが、材
料ソースであるターゲットにはZnS とSiO2とを混合
焼結したものを用いた。EXAMPLES The present invention will be described below based on specific examples. FIG. 1 is a schematic diagram showing a cross-sectional structure of an optical information recording medium according to the present invention. The optical information recording medium 10 is a rewritable optical information recording medium, and is formed, for example, by sequentially laminating the following films on a substrate 1 made of disk-shaped transparent glass or plastic. A multi-layer lower protective film 2 was formed as a lower protective film on a surface of a substrate 1 made of polycarbonate (refractive index 1.58), on which a pre-groove (a portion having a low reflectance for tracking by an optical pickup) was formed. . This multilayer lower protective film 2 has a wavelength (
Four layers, which are transparent to two lights having different reproducing wavelengths of 780 nm and recording and erasing wavelength of 830 nm) and different in refractive index, are laminated next to each other.
The multilayer lower protective film 2 is a lower protective film (I) 2a made of TiO 2 (refractive index 2.5) having a thickness of 80 nm and SiO 2 (refractive index 1.46).
The lower protective film (II) 2b of 110 nm thick and the lower protective film (III) 2c of TiO 2 having a thickness of 260 nm were formed. These films were formed by a sputtering method or a vacuum evaporation method (a resistance heating method, an electron beam method, an ion plating method). TiO 2 and SiO 2 were used for the targets that are the source of these materials, respectively. In addition, TiO 2
May be formed by vapor deposition of Ti in an oxygen atmosphere and reaction. Further, a lower protective film (IV) 2d made of ZnS—SiO 2 (refractive index 2.0) was formed to a thickness of 250 nm. This film is also formed by the sputtering method or the vacuum evaporation method, but the target which is the material source is a mixture of ZnS and SiO 2 and sintered.
【0008】次に、GeSbTe から成る記録膜3を厚さ
50nmにて成膜した。この膜もスパッタリング法又は真空
蒸着法により成膜し、材料ソースであるターゲットに
は、Ge,Sb,Te を適当に混合焼結したもの(GeSb2
Te4,Ge2Sb2Te5等)を用いた。上記記録膜3上に、
ZnS-SiO2から成る上層保護膜4を厚さ 200nmにて成
膜した。この膜の成膜方法は、下層保護膜(IV)2dと同
じとした。更に、Au から成る反射膜5を厚さ 100nmに
て成膜した。この膜は、スパッタリング法又は真空蒸着
法にて成膜した。Next, the thickness of the recording film 3 made of GeSbTe is set.
The film was formed at 50 nm. This film is also formed by a sputtering method or a vacuum evaporation method, and a target which is a material source is a mixture of Ge, Sb, and Te which is appropriately mixed and sintered (GeSb 2
Te 4, Ge 2 Sb 2 Te 5, etc.) was used. On the recording film 3,
An upper protective film 4 made of ZnS—SiO 2 was formed to a thickness of 200 nm. The method for forming this film was the same as that for the lower protective film (IV) 2d. Further, a reflective film 5 made of Au was formed to a thickness of 100 nm. This film was formed by a sputtering method or a vacuum evaporation method.
【0009】一方、基板1面のプリグルーブのない面側
に反射防止膜として多層反射防止膜6を形成した。この
多層反射防止膜6は波長( 再生波長780nm,記録消去波長
830nm)の異なる2つの光に対して透明で屈折率の異なる
2層を積層した。上記多層反射防止膜6は、TiO2(屈
折率2.5)から成る反射防止膜(I) 6aを厚さ20nm、Mg
F2(屈折率1.38)から成る反射防止膜(II)6bを厚さ
180nmにてそれぞれ成膜した。これらの膜はスパッタリ
ング法又は真空蒸着法(抵抗加熱法、電子ビーム法、イ
オンプレーティング法)により成膜し、材料ソースであ
るターゲットにはそれぞれTiO2,MgF2を用いた。
尚、TiO2はTi を酸素雰囲気中で蒸着し反応させて成
膜しても良い。On the other hand, a multilayer antireflection film 6 was formed as an antireflection film on the surface of the surface of the substrate 1 where there was no pre-groove. This multilayer antireflection coating 6 has a wavelength (reproduction wavelength 780 nm, recording / erasing wavelength
Two layers having different refractive indices, which are transparent to two lights of 830 nm) are laminated. The multilayer antireflection film 6 is an antireflection film (I) 6a made of TiO 2 (refractive index 2.5) having a thickness of 20 nm and Mg.
Thickness of antireflection film (II) 6b made of F 2 (refractive index 1.38)
Each film was formed at 180 nm. These films were formed by a sputtering method or a vacuum evaporation method (a resistance heating method, an electron beam method, an ion plating method), and TiO 2 and MgF 2 were used as targets which were material sources.
Incidentally, TiO 2 may be formed into a film by vapor-depositing and reacting Ti in an oxygen atmosphere.
【0010】反射防止膜としてコーティングする膜は、
上述したような光情報記録媒体10では、基板側ではそ
の屈折率と異なると共に互いに屈折率の異なる透明な多
層膜又は基板の屈折率と異なる透明な単層膜でも良い。
反射防止膜の材料としては透明性が高く高融点であるM
g,Ca,Sr,Y,La,Ce,Ho,Er,Yb,Ti,Zr,Hf,V,
Nb,Ta,Zn,Al,Si,Ge,Pb などの酸化物、硫化物、
窒化物やCa,Mg,Li などのフッ化物を用いることがで
きる。尚、上述の光情報記録媒体10の反射膜5上に樹
脂等のオーバコートを施したり、その上に保護板又はも
う1つの同様の光情報記録媒体を接着剤などで張り合わ
せても良い。The film coated as the antireflection film is
In the optical information recording medium 10 as described above, a transparent multilayer film having a different refractive index on the substrate side and a different refractive index from each other or a transparent single layer film having a different refractive index from the substrate may be used.
As a material for the antireflection film, M which has high transparency and high melting point
g, Ca, Sr, Y, La, Ce, Ho, Er, Yb, Ti, Zr, Hf, V,
Oxides, sulfides such as Nb, Ta, Zn, Al, Si, Ge, Pb,
A nitride or a fluoride such as Ca, Mg or Li can be used. It should be noted that the reflective film 5 of the optical information recording medium 10 described above may be overcoated with a resin or the like, or a protective plate or another similar optical information recording medium may be attached thereto by an adhesive or the like.
【0011】図2は、上述の実施例と同様のポリカーボ
ネイト(屈折率1.58)から成る基板面に同様の多層反射
防止膜を施したときの照射される光の波長(nm)に対する
基板表面の反射率(%)の依存性のシミュレーション結果
を示した特性図である。ここで、ポリカーボネイトから
成る基板の反射防止膜を施さない表面の反射率は約5%
である。図より、光の波長が 780nm(再生波長)で0.03
%、 830nm(記録消去波長)で0.1%と反射率が低くな
っていることが分かる。即ち、これらの波長での反射率
は0%と見なして良いと言える。FIG. 2 shows the reflection of the substrate surface with respect to the wavelength (nm) of the irradiated light when the same multilayer antireflection film is applied to the substrate surface made of the same polycarbonate (refractive index 1.58) as in the above embodiment. It is a characteristic view showing a simulation result of the dependency of the rate (%). Here, the reflectance of the surface of the substrate made of polycarbonate without the antireflection film is about 5%.
Is. From the figure, it is 0.03 when the light wavelength is 780 nm (reproduction wavelength).
%, The reflectance is low at 0.1% at 830 nm (recording / erasing wavelength). That is, it can be said that the reflectance at these wavelengths can be regarded as 0%.
【0012】図3は、図1の構造から成る反射防止膜を
施した光情報記録媒体(本発明品:実線にて表示)にお
ける記録状態部分(非晶質部分)と消去状態部分(結晶
質部分)との光の波長(nm)に対する反射率(%)の依存性
のシミュレーション結果を示した特性図である。尚、光
情報記録媒体10における再生のための光の波長は 780
nmであり、記録・消去のための光の波長は 830nmであ
る。又、比較のため、基板表面に反射防止膜を施さない
構造から成る光情報記録媒体の特性を破線にて示した。
反射防止膜を施した光情報記録媒体(本発明品)におい
て、再生波長 780nmでは、消去状態部分の反射率が70%
程度で反射防止膜を施さないものから殆ど変化していな
い。一方、記録状態部分の反射率は35%から31%と低下
している。即ち、前述の振幅変調度は50%から56%へと
大きくできることが分かる。更に、記録・消去波長 830
nmでは消去状態部分及び記録状態部分の反射率が共に34
%から30%へと小さくでき、光吸収率を4%増加させる
ことができる。即ち、図1の構造から成る光情報記録媒
体10は、反射防止膜が施されていることにより再生波
長では当初の目的であるC/N比が改善されると共に記
録消去波長では光吸収率が大きくなることから、記録・
消去のための光パワーを小さくすることができるという
更成る効果が生じる。FIG. 3 is a recording state portion (amorphous portion) and an erasing state portion (crystalline) in an optical information recording medium (inventive product: shown by a solid line) provided with an antireflection film having the structure of FIG. FIG. 7 is a characteristic diagram showing a simulation result of the dependency of reflectance (%) on the wavelength (nm) of light with (part). The wavelength of light for reproduction on the optical information recording medium 10 is 780
The wavelength of light for recording / erasing is 830 nm. For comparison, the characteristics of the optical information recording medium having a structure in which an antireflection film is not provided on the substrate surface are shown by broken lines.
In the optical information recording medium (product of the present invention) provided with an antireflection film, the reflectance of the erased portion is 70% at the reproduction wavelength of 780 nm.
There is almost no change from that without the antireflection film. On the other hand, the reflectance of the recorded state portion is reduced from 35% to 31%. That is, it can be seen that the above-mentioned amplitude modulation degree can be increased from 50% to 56%. Furthermore, recording / erasing wavelength 830
In nm, the reflectances of the erased state portion and the recorded state portion are both 34
% To 30% and the light absorption rate can be increased by 4%. That is, in the optical information recording medium 10 having the structure shown in FIG. 1, the antireflection film is applied to improve the C / N ratio which is the original purpose at the reproducing wavelength and to improve the optical absorptance at the recording / erasing wavelength. Since it will be large, recording /
A further advantage is that the optical power for erasing can be reduced.
【図1】本発明の具体的な一実施例に係る光情報記録媒
体の断面構造を示した模式図である。FIG. 1 is a schematic view showing a cross-sectional structure of an optical information recording medium according to a specific example of the present invention.
【図2】基板面に実施例と同様の多層反射防止膜を施し
たときの照射される光の波長(nm)に対する基板表面の反
射率(%)の依存性のシミュレーション結果を示した特性
図である。FIG. 2 is a characteristic diagram showing a simulation result of dependence of reflectance (%) on a substrate surface with respect to a wavelength (nm) of irradiated light when a multilayer antireflection film similar to that in Example is applied to the substrate surface. Is.
【図3】同実施例の光情報記録媒体における記録状態部
分(非晶質部分)と消去状態部分(結晶質部分)との光
の波長(nm)に対する反射率(%)の依存性のシミュレーシ
ョン結果を示した特性図である。FIG. 3 is a simulation of the dependence of reflectance (%) on the wavelength (nm) of light in the recorded state portion (amorphous portion) and the erased state portion (crystalline portion) in the optical information recording medium of the same example. It is a characteristic view showing a result.
1…基板 2…多層下層保護膜 3…記録膜 4…上層保護膜 5…反射膜 6…多層反射防止膜 6a…反射防止膜(I) 6b…反射防止膜(II) 10…光情報記録媒体 DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Multilayer lower protective film 3 ... Recording film 4 ... Upper protective film 5 ... Reflective film 6 ... Multilayer antireflection film 6a ... Antireflection film (I) 6b ... Antireflection film (II) 10 ... Optical information recording medium
Claims (1)
膜を順次形成した光情報記録媒体において、 前記記録膜が形成された側と反対側の前記基板表面上に
該基板の屈折率と異なる透明な単層膜又は前記基板の屈
折率と異なると共に互いに屈折率の異なる透明な多層膜
から成る反射防止膜を備えたことを特徴とする光情報記
録媒体。1. An optical information recording medium in which a lower protective film, a recording film, and an upper protective film are sequentially formed on a substrate, and the refractive index of the substrate is on the surface of the substrate opposite to the side on which the recording film is formed. An optical information recording medium comprising an antireflection film formed of a transparent single-layer film different from the above or a transparent multilayer film having a refractive index different from each other and different from each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35818292A JP3206165B2 (en) | 1992-12-26 | 1992-12-26 | Optical information recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35818292A JP3206165B2 (en) | 1992-12-26 | 1992-12-26 | Optical information recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06195753A true JPH06195753A (en) | 1994-07-15 |
| JP3206165B2 JP3206165B2 (en) | 2001-09-04 |
Family
ID=18457964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35818292A Expired - Lifetime JP3206165B2 (en) | 1992-12-26 | 1992-12-26 | Optical information recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3206165B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5812182A (en) * | 1995-06-07 | 1998-09-22 | Nippondenso Co., Ltd. | Optical information recording medium for recording erasing and play back of compact disc signals |
| CN1307628C (en) * | 2001-11-08 | 2007-03-28 | 柯尼卡株式会社 | Optical recording medium and method for recording and reading information |
| JP2010135005A (en) * | 2008-12-04 | 2010-06-17 | Sony Corp | Optical recording medium and method for manufacturing the same |
-
1992
- 1992-12-26 JP JP35818292A patent/JP3206165B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5812182A (en) * | 1995-06-07 | 1998-09-22 | Nippondenso Co., Ltd. | Optical information recording medium for recording erasing and play back of compact disc signals |
| CN1307628C (en) * | 2001-11-08 | 2007-03-28 | 柯尼卡株式会社 | Optical recording medium and method for recording and reading information |
| JP2010135005A (en) * | 2008-12-04 | 2010-06-17 | Sony Corp | Optical recording medium and method for manufacturing the same |
| US8293352B2 (en) | 2008-12-04 | 2012-10-23 | Sony Corporation | Optical recording medium and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3206165B2 (en) | 2001-09-04 |
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