JPH06216270A - Ceramic package - Google Patents
Ceramic packageInfo
- Publication number
- JPH06216270A JPH06216270A JP525893A JP525893A JPH06216270A JP H06216270 A JPH06216270 A JP H06216270A JP 525893 A JP525893 A JP 525893A JP 525893 A JP525893 A JP 525893A JP H06216270 A JPH06216270 A JP H06216270A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic package
- aluminum nitride
- flat plate
- lead frame
- aluminium nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 37
- 239000011521 glass Substances 0.000 claims abstract description 29
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 42
- 239000000463 material Substances 0.000 abstract description 4
- 229910017083 AlN Inorganic materials 0.000 abstract 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 abstract 5
- 239000004065 semiconductor Substances 0.000 description 12
- 239000000843 powder Substances 0.000 description 11
- 238000010304 firing Methods 0.000 description 9
- 239000011230 binding agent Substances 0.000 description 8
- 229910052582 BN Inorganic materials 0.000 description 6
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229910052863 mullite Inorganic materials 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- -1 dioctyl acetate Chemical compound 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Ceramic Products (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、反りがなく、熱放散性
と生産性に優れたセラミックパケージに関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic package which has no warpage and is excellent in heat dissipation and productivity.
【０００２】[0002]
【従来の技術】従来から、半導体素子を半導体装置に組
み込むための気密容器として、アルミナ基板などのセラ
ミック基板とアルミナやムライトを成分としたセラミッ
クキャップとをリードフレームを介在させ、低融点ガラ
スで接着し気密封止してなるセラミックパッケージがあ
る。しかしながら、近年、回路の高集積化に伴い、半導
体素子から放散される熱は増加の一途をたどってきてい
ることから、従来のアルミナをセラミックパッケージベ
ースとした基板では十分でない状況にある。2. Description of the Related Art Conventionally, as an airtight container for incorporating a semiconductor element into a semiconductor device, a ceramic substrate such as an alumina substrate and a ceramic cap containing alumina or mullite as a component are bonded with a low melting point glass via a lead frame. There are ceramic packages that are hermetically sealed. However, in recent years, the heat dissipated from the semiconductor element has been increasing along with the high integration of the circuit, and thus the conventional substrate based on a ceramic package of alumina is not sufficient.
【０００３】この問題を解決する手段として、セラミッ
クパッケージベースの基板に熱伝導性の優れた窒化アル
ミニウム基板を使用し、封止用のガラスも窒化アルミニ
ウムとほぼ同等な熱膨張係数を有するガラスを使用した
セラミックパッケージが提案されている（特開昭６２−
４５１５４号公報）。As a means for solving this problem, an aluminum nitride substrate having excellent thermal conductivity is used as a substrate of a ceramic package base, and a glass for sealing is also made of glass having a coefficient of thermal expansion almost equal to that of aluminum nitride. A ceramic package has been proposed (Japanese Patent Laid-Open No. 62-62-62).
45154).
【０００４】窒化アルミニウムは、その理論熱伝導率が
３２０Ｗ／ｍ・Ｋと高く、しかも電気絶縁性、機械的性
質もアルミナと同等なこと、さらには熱膨張係数がシリ
コンに近いことから、近年、原料粉末の改良、有効な焼
結助剤の開発、焼成条件の適正化などの研究が進み、熱
伝導率が２００Ｗ／ｍ・Ｋを越えるものまで開発されて
いる。In recent years, aluminum nitride has a high theoretical thermal conductivity of 320 W / m · K, has the same electrical insulation and mechanical properties as alumina, and has a thermal expansion coefficient close to that of silicon. Research such as improvement of raw material powder, development of effective sintering aids, optimization of firing conditions, etc. has progressed, and thermal conductivity of more than 200 W / mK has been developed.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、このよ
うな優れた特性を有する窒化アルミニウムによりセラミ
ックパッケージベースを製造するにあったては、従来の
平板製造時に行われている段積焼成を利用できず、量産
性に劣るという欠点があった。また、平板の段積焼成に
おいては、荷重をかけて反りを防止することも行われて
いたが、セラミックパッケージベース自体は凹部を有す
るため均等に荷重をかけることができず、反りによる不
良品発生の問題があった。However, in manufacturing a ceramic package base using aluminum nitride having such excellent characteristics, it is not possible to utilize the stack firing that is conventionally performed during flat plate manufacturing. However, it has a drawback of being inferior in mass productivity. In addition, in stack firing of flat plates, it was also attempted to apply a load to prevent warpage, but the ceramic package base itself has recesses, so it is not possible to apply a load evenly, and defective products are generated due to warpage. There was a problem.
【０００６】本発明者らは、このような優れた窒化アル
ミニウムをセラミックパッケージベースとして使用する
ことを目的とし、反りがなく生産性に優れた構造につい
て鋭意検討を重ねた結果、従来より一体物として製造さ
れてきた凹部をもつセラミックパッケージベースを、２
枚の窒化アルミニウム平板をリードフレームの接合に使
用するのと同じガラスで貼り合わせた構造とし、そして
リードフレームの固定と窒化アルミニウム平板同士の接
着を同時に行えば生産性が向上することを見いだし、本
発明を完成させたものである。The inventors of the present invention have conducted extensive studies as to a structure excellent in productivity with no warp for the purpose of using such excellent aluminum nitride as a ceramic package base. Two ceramic package bases with recesses that have been manufactured
It was found that productivity can be improved by adopting a structure in which a single aluminum nitride flat plate is laminated with the same glass used for joining lead frames, and fixing the lead frame and bonding the aluminum nitride flat plates at the same time. The invention was completed.
【０００７】すなわち、本発明は、窒化アルミニウム平
板と中心部が除去された窒化アルミニウム平板とを結晶
性ガラスにより接着させてセラミックパッケージベース
を形成させるとともに、リードフレームが上記セラミッ
クパッケージベースに上記と同種の結晶性ガラスにより
接合されてなることを特徴とするセラミックパッケージ
である。That is, according to the present invention, an aluminum nitride flat plate and an aluminum nitride flat plate from which the central portion is removed are adhered by crystalline glass to form a ceramic package base, and a lead frame is formed on the ceramic package base as described above. It is a ceramic package characterized by being joined by crystalline glass.
【０００８】以下、本発明のセラミックパッケージを図
面を参照しながら説明する。図１は、本発明の一例のセ
ラミックパッケージに半導体素子を搭載しセラミックキ
ャップで封止した状態における概略断面図である。図２
は、本発明で使用される窒化アルミニウム板の一例を示
す平面図であり、（Ａ）は窒化アルミニウム平板１、
（Ｂ）は中心部が除去された窒化アルミニウム平板２で
ある。これらの窒化アルミニウム平板１、２は、結晶性
ガラス３を介在させて一体化することにより、凹部をも
ったセラミックパッケージベースが形成される。The ceramic package of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic cross-sectional view showing a state in which a semiconductor element is mounted on a ceramic package of an example of the present invention and sealed with a ceramic cap. Figure 2
[FIG. 1] is a plan view showing an example of an aluminum nitride plate used in the present invention, (A) is an aluminum nitride flat plate 1,
(B) is the aluminum nitride flat plate 2 with the center removed. These aluminum nitride flat plates 1 and 2 are integrated by interposing the crystalline glass 3 therebetween to form a ceramic package base having a recess.
【０００９】本発明で使用される窒化アルミニウム平板
の製造方法の一例をあげれば、以下のとおりである。ま
ず、所定量の窒化アルミニウム粉末にＹ2 Ｏ3 粉末やＣ
ａＯ粉末等の焼結助剤を添加する。Ｙ2 Ｏ3 の場合、そ
の添加量は１〜７重量％が好ましい。この混合粉末に、
有機バインダー、可塑剤、分散剤、有機溶剤を所定量加
え、ボールミルで十分混合しスラリーを調整する。この
スラリーをドクターブレード装置によりシート状に成形
後、例えば図２の（Ａ）及び（Ｂ）に示すような形状に
プレスする。An example of the method for producing the aluminum nitride flat plate used in the present invention is as follows. First, a predetermined amount of aluminum nitride powder is added to Y 2 O 3 powder or C
A sintering aid such as aO powder is added. In the case of Y 2 O 3 , the addition amount is preferably 1 to 7% by weight. To this mixed powder,
A predetermined amount of an organic binder, a plasticizer, a dispersant, and an organic solvent are added, and they are sufficiently mixed with a ball mill to prepare a slurry. This slurry is formed into a sheet by a doctor blade device, and then pressed into a shape as shown in FIGS. 2A and 2B, for example.
【００１０】シート成形体の焼成は、各シートに焼成時
の接着を阻止するために窒化ホウ素粉末を塗布したの
ち、図２（Ａ）の形状ならばそれらの何枚かを積層す
る。図２（Ｂ）の場合には同一形状のシートを積層す
る。各々の積層体は、有機バインダーの種類によって異
なるが、窒素又は空気中で脱バインダー処理を行った
後、窒素中、１８００℃以上の温度で焼成する。このと
き積層体上部に荷重をかけることにより反りを防止する
ことができる。In the firing of the sheet molded body, boron nitride powder is applied to each sheet in order to prevent adhesion at the time of firing, and then some of them are laminated in the shape shown in FIG. 2 (A). In the case of FIG. 2B, sheets having the same shape are stacked. Although each laminate varies depending on the type of organic binder, it is subjected to binder removal treatment in nitrogen or air, and then fired in nitrogen at a temperature of 1800 ° C. or higher. At this time, a warp can be prevented by applying a load to the upper part of the laminated body.
【００１１】本発明の特徴は、従来のセラミックパッー
ジベースが成形体の段階で凹部を有するため成形体ごと
に個別に焼成しなければならなかったので生産性はよく
なかったが、上記プロセスを採用したことによりそれを
解決したことである。また、個別に焼成した場合、反り
の問題があったが、本発明ではその問題も解決すること
ができたことである。The feature of the present invention is that the conventional ceramic package base has recesses at the stage of the molded body and therefore must be fired individually for each molded body, so the productivity was not good, but the above process It is that it was solved by adopting it. Further, when fired individually, there was a problem of warpage, but the present invention was able to solve that problem.
【００１２】上記で製造された窒化アルミニウム平板１
と中心部が除去された窒化アルミニウム平板２とは、結
晶性ガラス３により一体化されるが、それに先立ち、窒
化アルミニウム平板１の上面に半導体素子を搭載するた
めのメタライズが施される。一般的には金ペースト等に
よる通常の厚膜メタライズの方法が採用される。窒化ア
ルミニウム平板１と中心部が除去された窒化アルミニウ
ム平板２との一体化に際しては、リードフレーム４の固
定も同時に行うことによって工程が簡略化される。Aluminum nitride flat plate 1 manufactured as described above
The aluminum nitride flat plate 2 from which the central portion is removed is integrated with the crystalline glass 3, but prior to this, metallization for mounting a semiconductor element is performed on the upper surface of the aluminum nitride flat plate 1. Generally, a usual thick film metallizing method using gold paste or the like is adopted. When the aluminum nitride flat plate 1 and the aluminum nitride flat plate 2 from which the central portion is removed are integrated, the process is simplified by fixing the lead frame 4 at the same time.
【００１３】本発明で使用される結晶性ガラスは、焼成
時に次第に結晶化していくものが好ましく、結晶化によ
り強度が保たれるとともに、セラミックキャップ６の封
着時にも結晶化しているので軟化が起こらず、リードフ
レーム４及び窒化アルミニウム平板１、２同士のずれも
回避できる。なお、結晶化ガラスの熱膨張係数は、接着
時及びヒートサイクル時のクラック発生等による気密性
低下防止の目的から、窒化アルミニウムのそれとほぼ同
じであることが望ましい。The crystallizable glass used in the present invention is preferably one that gradually crystallizes during firing. The strength is maintained by the crystallization, and the glass is crystallized when the ceramic cap 6 is sealed, so that the glass is softened. This does not occur, and the deviation between the lead frame 4 and the aluminum nitride flat plates 1 and 2 can be avoided. It is desirable that the coefficient of thermal expansion of the crystallized glass be substantially the same as that of aluminum nitride for the purpose of preventing a decrease in airtightness due to cracks and the like during bonding and heat cycle.
【００１４】本発明で使用される結晶性ガラスの具体例
をあげれば、ＰｂＯとＺｎＯを主成分とし、ＳｉＯ2 、
Ｂ2 Ｏ3 、ＴｉＯ2 、Ａｌ2 Ｏ3 などを副成分とするも
のである。Specific examples of the crystalline glass used in the present invention include PbO and ZnO as main components, SiO 2 and
B 2 O 3, and TiO 2, Al 2 O 3 it is an auxiliary component.
【００１５】次に、リードフレーム４を接合するまでの
工程を説明すると、窒化アルミニウム平板１に半導体素
子７を搭載するための厚膜メタライズ（図示なし）を施
したのち、窒化アルミニウム平板１の窒化アルミニウム
平板２との接着面となる部分、及び中心部が除去された
窒化アルミニウム平板２のリード固定面側に、焼成によ
って結晶化する低融点ガラスペーストを印刷する。次
に、図１の構成となるように、窒化アルミニウム平板
１、２及びリードフレーム４を配置し空気中で焼成する
ことによって、本発明のセラミックパッケージが作製さ
れる。焼成温度は、ガラス成分によって異なるが、一般
的には４００〜５００℃である。また、リードフレーム
４としては、一般にコバールや４２Ｎｉ材が使用され
る。Next, the steps until the lead frame 4 is joined will be described. After the thick film metallization (not shown) for mounting the semiconductor element 7 on the aluminum nitride flat plate 1, the aluminum nitride flat plate 1 is nitrided. A low-melting-point glass paste that is crystallized by firing is printed on the lead fixing surface side of the aluminum nitride flat plate 2 from which the central portion has been removed and the portion to be the adhesion surface with the aluminum flat plate 2. Then, the aluminum nitride flat plates 1 and 2 and the lead frame 4 are arranged so as to have the structure shown in FIG. 1 and fired in the air to manufacture the ceramic package of the present invention. Although the firing temperature varies depending on the glass component, it is generally 400 to 500 ° C. The lead frame 4 is generally made of Kovar or 42Ni material.
【００１６】次いで、上記厚膜メタライズ部分に半田等
により半導体素子７を接着したのち、半導体素子上の所
定のパットとリードフレーム４とをアルミニウムワイヤ
８で接続する。その後、低融点ガラス５のペーストが印
刷されたセラミックキャップ６が加熱接着される。セラ
ミックキャップの材質としては、アルミナやムライトが
使用されるが、熱膨張係数の点からムライトが好まし
い。Next, after the semiconductor element 7 is bonded to the thick film metallized portion by soldering or the like, a predetermined pad on the semiconductor element and the lead frame 4 are connected by the aluminum wire 8. After that, the ceramic cap 6 on which the paste of the low melting point glass 5 is printed is heat-bonded. Alumina or mullite is used as the material of the ceramic cap, and mullite is preferable from the viewpoint of the coefficient of thermal expansion.
【００１７】[0017]
【実施例】以下、実施例をあげてさらに具体的に本発明
を説明する。EXAMPLES The present invention will be described in more detail with reference to examples.
【００１８】酸素含有量１．２重量％の窒化アルミニウ
ム粉末９６重量部、Ｙ2 Ｏ3 粉末４重量部、有機結合剤
としてポリビニルブチラールを８重量部、ジオクチルア
セテートを４重量部、さらにはグリセリントリオレート
を１重量部、有機溶剤としてトルエンを３８重量部、イ
ソプロピルアルコールを１２重量部秤量し、ボールミル
で十分に混合しスラリーを調合した。このスラリーを真
空脱泡し、粘度を２００００ｃｐｓに調整したのち、ド
クターブレード装置にてシート状に成形した。このとき
のシート厚みは、図２（Ａ）の窒化アルミニウム平板１
用では０．８２ｍｍ、図２（Ｂ）の中心部が除去された
窒化アルミニウム平板２用では０．３０ｍｍとした。96 parts by weight of aluminum nitride powder having an oxygen content of 1.2% by weight, 4 parts by weight of Y 2 O 3 powder, 8 parts by weight of polyvinyl butyral as an organic binder, 4 parts by weight of dioctyl acetate, and further glycerin trio. 1 part by weight of the rate, 38 parts by weight of toluene as an organic solvent, and 12 parts by weight of isopropyl alcohol were weighed and sufficiently mixed with a ball mill to prepare a slurry. The slurry was degassed in vacuum to adjust the viscosity to 20000 cps, and then formed into a sheet with a doctor blade device. The sheet thickness at this time is the aluminum nitride flat plate 1 of FIG.
In the case of the aluminum nitride flat plate 2 in which the central portion of FIG. 2 (B) is removed, it is set to 0.82 mm.
【００１９】次に、厚み０．８２ｍｍのシートは、３３
ｍｍ×３３ｍｍの形状にプレスで打ち抜き、また、０．
３０ｍｍのシートについては、外形寸法３３ｍｍ×３３
ｍｍで中心部の２４ｍｍ×２４ｍｍの部分が除去された
図２（Ｂ）に示す形状に打ち抜いた。これらの各シート
表面に窒化ホウ素粉末を塗布してから、図２（Ａ）及び
図２（Ｂ）の各シートごとに１０枚積み重ね、空気中、
４８０℃、５時間加熱して脱バインダーをしたのち、以
下の手順で焼成した。Next, a sheet having a thickness of 0.82 mm has 33
punched into a shape of mm × 33 mm by a press, and 0.
For a 30 mm sheet, the external dimensions are 33 mm x 33
It was punched into a shape shown in FIG. 2 (B) in which the central 24 mm × 24 mm portion was removed. After applying boron nitride powder to the surface of each of these sheets, stacking 10 sheets for each sheet of FIG. 2 (A) and FIG. 2 (B), in air,
After heating at 480 ° C. for 5 hours to remove the binder, firing was performed according to the following procedure.
【００２０】まず、積層体上部に窒化ホウ素板を置き、
荷重をかけてから窒化ホウ素製の容器に収納した。それ
を加熱炉に投入し、窒素雰囲気中、１９００℃で２時間
焼成した。得られた積層体は、各シート間に窒化ホウ素
粉末が介在しているため、融着は起こらず１枚ずつの板
が得られた。表面に窒化ホウ素粉末が付着していたので
それをブラストにより除去した。以上のようにして得ら
れた窒化アルミニウム平板１、２の外形寸法は、いずれ
も２８×２８ｍｍであった。First, a boron nitride plate is placed on top of the laminated body,
After applying a load, it was stored in a container made of boron nitride. It was put into a heating furnace and fired at 1900 ° C. for 2 hours in a nitrogen atmosphere. In the obtained laminated body, since the boron nitride powder was interposed between the sheets, fusion did not occur and one plate was obtained. Since the boron nitride powder adhered to the surface, it was removed by blasting. The outer dimensions of the aluminum nitride flat plates 1 and 2 obtained as described above were both 28 × 28 mm.
【００２１】窒化アルミニウム平板１と中心部が除去さ
れた窒化アルミニウム平板２との接着及びリードフレー
ム４の接合は、結晶性ガラス粉末〔日本電気硝子社製商
品名「ＬＳ−０４５１」（熱膨張係数５．３×１０-6／
℃）〕に有機結合剤と有機溶剤を加えて調合されたペー
ストを使用し、以下の手順で行った。Adhesion between the aluminum nitride flat plate 1 and the aluminum nitride flat plate 2 from which the central portion has been removed and the lead frame 4 are joined by using a crystalline glass powder [Nippon Electric Glass Co., Ltd., trade name "LS-0451" (coefficient of thermal expansion). 5.3 × 10 -6 /
C)]] and a paste prepared by adding an organic binder and an organic solvent was used, and the procedure was as follows.
【００２２】まず、図２（Ａ）に示される窒化アルミニ
ウム平板１については、その外周部から４ｃｍ入り込ん
だ所まで上記ガラスペーストを塗布した。このときの塗
布量は５０ｍｇ／ｃｍ2 であった。また、図２（Ｂ）に
示される中心部が除去された窒化アルミニウム平板２に
ついては、リードフレーム４が接合される面の全面に同
様のガラスペーストを印刷した。このときの塗布量は１
４０ｍｇ／ｃｍ2 であった。First, with respect to the aluminum nitride flat plate 1 shown in FIG. 2 (A), the above glass paste was applied to the place 4 cm from the outer peripheral portion. The coating amount at this time was 50 mg / cm 2 . Further, with respect to the aluminum nitride flat plate 2 from which the central portion is removed as shown in FIG. 2B, the same glass paste is printed on the entire surface to which the lead frame 4 is joined. The application amount at this time is 1
It was 40 mg / cm 2 .
【００２３】以上の２枚の板を積層したのち、ガラスペ
ースト中の有機バインダー成分を除去するため、空気
中、３６０℃で加熱処理した。その後、コバール製リー
ドフレーム４を設置し、空気中、４８０℃、１０分処理
してそれを接合するとともに、窒化アルミニウム平板１
と中心部が除去された窒化アルミニウム平板２とを接着
した。以上のようにして、リードフレームが接合された
本発明のセラミックパッケージが作製された。なお、本
実施例では、半導体素子７を搭載するための金ペ−スト
等によるメタライズ及び半導体素子の搭載は省略した。After stacking the above two plates, heat treatment was performed in air at 360 ° C. in order to remove the organic binder component in the glass paste. After that, the Kovar lead frame 4 is installed and treated in air at 480 ° C. for 10 minutes to bond it together with the aluminum nitride flat plate 1
And the aluminum nitride flat plate 2 from which the central portion was removed were bonded. As described above, the ceramic package of the present invention to which the lead frames were joined was manufactured. In this embodiment, the metallization for mounting the semiconductor element 7 by gold paste and the mounting of the semiconductor element are omitted.
【００２４】その後、ムライト質からなる市販の低融点
ガラス５のペースト（日本電気硝子社製「ＬＳ−１３０
１」）を所定箇所に塗布し、加熱処理によって有機バイ
ンダーが除去されたセラミックキャップ６を搭載し、４
３０℃、１０分空気中で処理して接合した。それをヒー
トサイクル試験に供し、試験後の気密性について検査し
たが、全く問題はなかった。Then, a paste of commercially available low melting point glass 5 made of mullite (“LS-130” manufactured by Nippon Electric Glass Co., Ltd.) was used.
1 ") is applied to a predetermined place, and the ceramic cap 6 from which the organic binder is removed by heat treatment is mounted, and 4
Bonding was performed by treating in air at 30 ° C. for 10 minutes. It was subjected to a heat cycle test and inspected for airtightness after the test, but there was no problem at all.
【００２５】[0025]
【発明の効果】本発明によれば、反りがなく、熱放散
性、気密性及び生産性に優れたセラミックパッケージが
得られる。According to the present invention, it is possible to obtain a ceramic package which has no warp and is excellent in heat dissipation, airtightness and productivity.
【図１】 本発明の一例のセラミックパッケージに半導
体素子を搭載しセラミックキャップで封止した状態にお
ける概略断面図である。FIG. 1 is a schematic cross-sectional view showing a state in which a semiconductor element is mounted on a ceramic package of an example of the present invention and sealed with a ceramic cap.
【図２】 （Ａ）は窒化アルミニウム平板の平面図、
（Ｂ）は中心部が除去された窒化アルミニウム平板の平
面図である。FIG. 2A is a plan view of an aluminum nitride flat plate,
(B) is a plan view of the aluminum nitride flat plate with the central portion removed.
１ 窒化アルミニウム平板 ２ 中心部が除去された窒化アルミニウム平板 ３ 結晶性ガラス ４ リードフレーム ５ 低融点ガラス ６ セラミックキャップ ７ 半導体素子 ８ アルミニウムワイヤ 1 Aluminum Nitride Flat Plate 2 Aluminum Nitride Flat Plate with the Central Part Removed 3 Crystalline Glass 4 Lead Frame 5 Low Melting Glass 6 Ceramic Cap 7 Semiconductor Element 8 Aluminum Wire
Claims (1)
れた窒化アルミニウム平板とを結晶性ガラスにより接着
させてセラミックパッケージベースを形成させるととも
に、リードフレームが上記セラミックパッケージベース
に上記と同種の結晶性ガラスにより接合されてなること
を特徴とするセラミックパッケージ。1. A ceramic package base is formed by adhering an aluminum nitride flat plate and an aluminum nitride flat plate from which a central portion is removed with crystalline glass, and a lead frame is formed on the ceramic package base by the same crystalline glass as described above. A ceramic package characterized by being joined by.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP525893A JP3204771B2 (en) | 1993-01-14 | 1993-01-14 | Ceramic package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP525893A JP3204771B2 (en) | 1993-01-14 | 1993-01-14 | Ceramic package |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06216270A true JPH06216270A (en) | 1994-08-05 |
| JP3204771B2 JP3204771B2 (en) | 2001-09-04 |
Family
ID=11606208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP525893A Expired - Fee Related JP3204771B2 (en) | 1993-01-14 | 1993-01-14 | Ceramic package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3204771B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6844575B2 (en) | 1999-08-19 | 2005-01-18 | Sharp Kabushiki Kaisha | Heterojunction bipolar transistor and method for fabricating the same |
| US6894384B1 (en) * | 1999-11-11 | 2005-05-17 | Oki Electric Industry, Co., Ltd. | Semiconductor device and method of manufacturing the same |
-
1993
- 1993-01-14 JP JP525893A patent/JP3204771B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6844575B2 (en) | 1999-08-19 | 2005-01-18 | Sharp Kabushiki Kaisha | Heterojunction bipolar transistor and method for fabricating the same |
| US6894384B1 (en) * | 1999-11-11 | 2005-05-17 | Oki Electric Industry, Co., Ltd. | Semiconductor device and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3204771B2 (en) | 2001-09-04 |
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