JPH0625326A - Alkoxy-substituted styrene copolymer hydride - Google Patents
Alkoxy-substituted styrene copolymer hydrideInfo
- Publication number
- JPH0625326A JPH0625326A JP4179978A JP17997892A JPH0625326A JP H0625326 A JPH0625326 A JP H0625326A JP 4179978 A JP4179978 A JP 4179978A JP 17997892 A JP17997892 A JP 17997892A JP H0625326 A JPH0625326 A JP H0625326A
- Authority
- JP
- Japan
- Prior art keywords
- alkoxy
- substituted styrene
- component
- copolymer
- styrene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Natural products C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 title claims abstract description 73
- 229920001577 copolymer Polymers 0.000 title claims abstract description 41
- 150000004678 hydrides Chemical class 0.000 title claims abstract description 19
- 230000003287 optical effect Effects 0.000 claims abstract description 29
- 150000003440 styrenes Chemical class 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 15
- 125000003118 aryl group Chemical group 0.000 claims abstract description 10
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 9
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 3
- 238000007334 copolymerization reaction Methods 0.000 claims description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- 238000005984 hydrogenation reaction Methods 0.000 abstract description 21
- 239000000758 substrate Substances 0.000 description 20
- 239000011347 resin Substances 0.000 description 18
- 229920005989 resin Polymers 0.000 description 18
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 12
- 229920000642 polymer Polymers 0.000 description 11
- 238000010521 absorption reaction Methods 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- HXLLCROMVONRRO-UHFFFAOYSA-N 2-butoxyethenylbenzene Chemical compound CCCCOC=CC1=CC=CC=C1 HXLLCROMVONRRO-UHFFFAOYSA-N 0.000 description 6
- 239000004793 Polystyrene Substances 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 6
- 239000004926 polymethyl methacrylate Substances 0.000 description 6
- 229920002223 polystyrene Polymers 0.000 description 6
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- -1 o are mainly used Chemical class 0.000 description 5
- 239000004417 polycarbonate Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000010526 radical polymerization reaction Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 3
- UAJRSHJHFRVGMG-UHFFFAOYSA-N 1-ethenyl-4-methoxybenzene Chemical compound COC1=CC=C(C=C)C=C1 UAJRSHJHFRVGMG-UHFFFAOYSA-N 0.000 description 2
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000010539 anionic addition polymerization reaction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000010538 cationic polymerization reaction Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000012994 photoredox catalyst Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- LQDGDDQWVWZDCS-UHFFFAOYSA-N 1-[(2-methylpropan-2-yl)oxy]-4-prop-1-en-2-ylbenzene Chemical compound CC(=C)C1=CC=C(OC(C)(C)C)C=C1 LQDGDDQWVWZDCS-UHFFFAOYSA-N 0.000 description 1
- LTGJSMARDKHZOY-UHFFFAOYSA-N 1-ethenyl-3-[(2-methylpropan-2-yl)oxy]benzene Chemical compound CC(C)(C)OC1=CC=CC(C=C)=C1 LTGJSMARDKHZOY-UHFFFAOYSA-N 0.000 description 1
- SOXFPOYICGTMQC-UHFFFAOYSA-N 1-ethenyl-4-(2-methylpropoxy)benzene Chemical compound CC(C)COC1=CC=C(C=C)C=C1 SOXFPOYICGTMQC-UHFFFAOYSA-N 0.000 description 1
- GRFNSWBVXHLTCI-UHFFFAOYSA-N 1-ethenyl-4-[(2-methylpropan-2-yl)oxy]benzene Chemical compound CC(C)(C)OC1=CC=C(C=C)C=C1 GRFNSWBVXHLTCI-UHFFFAOYSA-N 0.000 description 1
- OBRYRJYZWVLVLF-UHFFFAOYSA-N 1-ethenyl-4-ethoxybenzene Chemical compound CCOC1=CC=C(C=C)C=C1 OBRYRJYZWVLVLF-UHFFFAOYSA-N 0.000 description 1
- MEPWMZKEADGNEO-UHFFFAOYSA-N 1-ethenyl-4-propan-2-yloxybenzene Chemical compound CC(C)OC1=CC=C(C=C)C=C1 MEPWMZKEADGNEO-UHFFFAOYSA-N 0.000 description 1
- ILYSKJPEZAABAA-UHFFFAOYSA-N 2-propoxyethenylbenzene Chemical compound CCCOC=CC1=CC=CC=C1 ILYSKJPEZAABAA-UHFFFAOYSA-N 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910002546 FeCo Inorganic materials 0.000 description 1
- 239000013032 Hydrocarbon resin Substances 0.000 description 1
- 239000005909 Kieselgur Substances 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- 239000007868 Raney catalyst Substances 0.000 description 1
- 229910000564 Raney nickel Inorganic materials 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 238000012662 bulk polymerization Methods 0.000 description 1
- 238000001460 carbon-13 nuclear magnetic resonance spectrum Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007720 emulsion polymerization reaction Methods 0.000 description 1
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 229920006270 hydrocarbon resin Polymers 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- FUGYGGDSWSUORM-UHFFFAOYSA-N para-hydroxystyrene Natural products OC1=CC=C(C=C)C=C1 FUGYGGDSWSUORM-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 125000003011 styrenyl group Chemical group [H]\C(*)=C(/[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 238000010557 suspension polymerization reaction Methods 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 150000003613 toluenes Chemical class 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Landscapes
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
(57)【要約】
【目的】光学用材料等に好適なアルコキシ置換スチレン
共重合体水素化物を提供する。
【構成】下記繰り返し単位(1)で表されるスチレン成
分(a)と(2)からなるアルコキシ置換スチレン成分
(b)からなり、(a):(b)=50〜90:50〜
10(モル%)である共重合体の芳香核の少なくとも5
0%が水素化されているアルコキシ置換スチレン共重合
体水素化物。
【化1】
(上記式中R1、R2は水素原子又は炭素数1〜5のアル
キル基を表し、R3は炭素数1〜10のアルキル基を表
す。R1、R2、R3は同一でも異なっていても良い。)(57) [Summary] [Object] To provide an alkoxy-substituted styrene copolymer hydride suitable for optical materials and the like. [Structure] A styrene component (a) represented by the following repeating unit (1) and an alkoxy-substituted styrene component (b) consisting of (2), (a) :( b) = 50-90: 50-
At least 5 of the aromatic nuclei of the copolymer being 10 (mol%)
Alkoxy-substituted styrene copolymer hydride having 0% hydrogenation. [Chemical 1] (In the above formula, R 1 and R 2 represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and R 3 represents an alkyl group having 1 to 10 carbon atoms. R 1 , R 2 and R 3 may be the same or different. It may be.)
Description
【0001】[0001]
【産業上の利用分野】本発明はアルコキシ置換スチレン
共重合体水素化物に関する。詳しくは高耐熱性、高硬
度、耐薬品性、を有する光学用材料、透明構造用材料、
機能樹脂原料等に利用することができるアルコキシ置換
スチレン共重合体水素化物に関する。特に本発明は耐熱
性、低吸湿性、低複屈折性、透明性及び情報記録膜との
密着性に優れた光ディスク基板用材料を提供することが
できる。FIELD OF THE INVENTION The present invention relates to an alkoxy-substituted styrene copolymer hydride. Specifically, optical materials having high heat resistance, high hardness, and chemical resistance, transparent structural materials,
The present invention relates to an alkoxy-substituted styrene copolymer hydride that can be used as a functional resin raw material. In particular, the present invention can provide a material for an optical disk substrate which is excellent in heat resistance, low hygroscopicity, low birefringence, transparency and adhesion to an information recording film.
【0002】[0002]
【従来の技術】レーザーを用いた光学記録は高密度の情
報記録、保存、及び再生が可能であるため、近年その開
発が積極的に行なわれている。この様な光学記録の一例
として光ディスクを挙げることが出来る。一般に光ディ
スクは、透明な基板とその上にコートされた種々の記録
媒体とから基本的に構成される。光ディスクの透明基板
には無色透明な合成樹脂が用いられるケースが多く、そ
の代表的なものとしてポリカーボネート(以下、「P
C]と略称する。)又はポリメチルメタクリレート(以
下、「PMMA]と略称する。)を挙げることができ
る。これらの樹脂は無色透明性に秀いでる他、夫々に固
有の優れた性質を有するものではあるが、光学用材料、
特に光ディスク基板としての要件を全て備えている訳で
はなく、解決すべき問題点を有している。例えば、PC
においてはその芳香族環に起因する複屈折性の問題があ
り、また、吸水性或いは透水性においても問題がある。
一方、PMMAにおいては、耐熱性、吸水性、靭性の面
における問題点がかねてより指摘されている。2. Description of the Related Art Since optical recording using a laser can record, store, and reproduce high density information, its development has been actively made in recent years. An optical disc can be given as an example of such optical recording. In general, an optical disc basically consists of a transparent substrate and various recording media coated thereon. A colorless transparent synthetic resin is often used for a transparent substrate of an optical disk, and a typical example thereof is polycarbonate (hereinafter, referred to as “P
It is abbreviated as C]. ) Or polymethylmethacrylate (hereinafter, abbreviated as “PMMA”). Materials for
In particular, it does not have all the requirements as an optical disk substrate, and has problems to be solved. For example, PC
There is a problem of birefringence due to the aromatic ring, and also a problem of water absorption or water permeability.
On the other hand, PMMA has been pointed out for some time in terms of heat resistance, water absorption and toughness.
【0003】このように、これらの樹脂は夫々固有の問
題点を内在させつつ使用に供されているのであるが、実
際には更に、これらの樹脂よりなる透明基板の上にコー
トされる記録媒体との関係において、後述のような新た
な問題が生じている。記録媒体については、従来より光
ディスクの用途に応じて多岐にわたる開発が行なわれて
いる。例えば、ライト・ワンス型と呼ばれる記録−再生
専用のものでは穴あけタイプのものが、またイレーザブ
ル型と呼ばれる、記録−再生−消去−再記録用のもので
は、結晶転移現象を利用した相転移タイプのもの、光磁
気効果を利用した光磁気タイプのもの等が知られてい
る。これらの記録媒体用材料は、ライト・ワンス型では
テルル又はその酸化物、合金化合物等、イレーザブル型
では、GdFe、TbFe、GdFeCo、TdFeC
oといった希土類−遷移金属のアモルファス合金化合物
等の無機系材料が主流とされており、一般に高真空下で
のスパッタリング等の乾式処法により、透明基板上に成
膜することにより形成されている。As described above, each of these resins has been used with its inherent problems. However, in reality, a recording medium coated on a transparent substrate made of these resins is used. In relation to, there is a new problem as described below. Conventionally, various developments have been made on recording media according to the use of optical disks. For example, a write-once type that is exclusively used for recording and reproduction is a perforated type, and a erasable type that is used for recording, reproducing, erasing, and re-recording is a phase transition type that utilizes a crystal transition phenomenon. There is known a magneto-optical type that utilizes the magneto-optical effect. The materials for these recording media are tellurium or its oxides and alloy compounds in the write-once type, and GdFe, TbFe, GdFeCo, TdFeC in the erasable type.
Inorganic materials such as rare earth-transition metal amorphous alloy compounds such as o are mainly used, and are generally formed by forming a film on a transparent substrate by a dry processing method such as sputtering under high vacuum.
【0004】ところで、PC、PMMAの吸湿性及び透
水性は、一方では基板自身の吸湿時の膨張によるソリの
問題を引き起こすものであるが、他方、基板を通しての
水分の透過により記録媒体の腐蝕を引き起こし、光ディ
スクの寿命を縮める原因となっている。また、基板用樹
脂の耐熱性について更に言及すれば、次のような問題が
ある。即ち、光ディスク、特にライト・ワンス型、イレ
ーザブル型等の光ディスクにおいては、記録の書き込
み、消去時の記録媒体の温度は200℃以上にもなる。
このため、ディスク基板にこの熱が直接かかることは無
いにしても、記録の書き込み、消去時には基板が相当高
温になることが予想され、耐熱性の低い樹脂では、基板
の変形或いはグルーブの変形等の問題が起こり得る。The hygroscopicity and water permeability of PC and PMMA, on the one hand, cause the problem of warpage due to expansion of the substrate itself during moisture absorption, but on the other hand, the permeation of moisture through the substrate causes corrosion of the recording medium. This causes the shortening of the life of the optical disc. Further, if the heat resistance of the resin for substrates is further mentioned, there are the following problems. That is, in the case of an optical disc, particularly a write-once type and an erasable type optical disc, the temperature of the recording medium at the time of writing and erasing the recording is as high as 200 ° C. or more.
For this reason, even if this heat is not directly applied to the disk substrate, it is expected that the substrate will reach a considerably high temperature during writing and erasing of recording, and if the resin has low heat resistance, the substrate will be deformed or the groove will be deformed. Problems can occur.
【0005】一方、光ディスクの生産工程においては、
基板或いは記録媒体の経時変化防止等の目的で、熱処理
工程を取り入れることが多いが、生産性の向上のために
は、できるだけ高い処理温度で処理することにより処理
時間を短縮することが望まれる。この様な観点からも、
樹脂の耐熱性が低いと高い処理温度を採用することがで
きず、生産性を上げることができないという不具合があ
る。On the other hand, in the optical disc production process,
A heat treatment step is often incorporated for the purpose of preventing the substrate or recording medium from changing over time, but in order to improve productivity, it is desirable to shorten the treatment time by treating at a treatment temperature as high as possible. From this perspective,
If the heat resistance of the resin is low, a high processing temperature cannot be adopted, and there is a problem that productivity cannot be increased.
【0006】このようなことから、光ディスクの生産工
程或いは使用状況の高温度に耐えるには、耐熱性の低い
PMMAでは全く不十分であり、従来においては専ら、
より耐熱性の高いPCが透明基板材料として検討されて
いる。更に、これらPC、PMMA等の従来の樹脂の欠
点を補うものとして、主に炭素及び水素のみよりなり、
かつ、軟化点の高い透明性の樹脂を用いる方法があり、
特開昭63−43910等において提案されている。From the above, PMMA having a low heat resistance is completely insufficient to withstand the high temperature in the optical disc production process or usage condition.
PC having higher heat resistance is being investigated as a transparent substrate material. Furthermore, to compensate for the drawbacks of conventional resins such as PC and PMMA, it is mainly composed of carbon and hydrogen,
And there is a method of using a transparent resin with a high softening point,
It is proposed in JP-A-63-43910 and the like.
【0007】[0007]
【発明が解決しようとしている課題】しかしながら、こ
のような軟化点の高い炭化水素樹脂は、いわゆるポリオ
レフィンの低接着性の例に洩れず、記録膜層との密着性
が悪く、光ディスクとしての十分な寿命が得られないと
いう問題があった。本発明者等は、上述の記録膜層との
密着性向上の方法について鋭意検討した結果、水素化ス
チレン重合体(ポリビニルシクロヘキサン)のシクロヘ
キサン環にアルコキシ基を導入することにより、記録膜
との密着性が顕著に向上する事を見出し、本発明に到達
した。However, such a hydrocarbon resin having a high softening point does not leak to an example of so-called low adhesion of polyolefin and has poor adhesion to a recording film layer, and is sufficient as an optical disc. There was a problem that life could not be obtained. The inventors of the present invention have made extensive studies on the method of improving the adhesion to the recording film layer, and as a result, by introducing an alkoxy group into the cyclohexane ring of the hydrogenated styrene polymer (polyvinylcyclohexane), the adhesion to the recording film is improved. The inventors have found that the properties are remarkably improved and have reached the present invention.
【0008】[0008]
【課題を解決するための手段】すなわち本発明の要旨は
下記繰り返し単位(1)で表わされるスチレン成分
(a)と下記繰り返し単位(2)で表わされるアルコキ
シ置換スチレン成分(b)とからなり、成分(a)と成
分(b)のモル比が(a):(b)=50〜90:50
〜10(モル%)である共重合体の芳香核の少なくとも
50%が水素化されていることを特徴とするアルコキシ
置換スチレン共重合体水素化物、That is, the gist of the present invention comprises a styrene component (a) represented by the following repeating unit (1) and an alkoxy-substituted styrene component (b) represented by the following repeating unit (2), The molar ratio of the components (a) and (b) is (a) :( b) = 50 to 90:50.
An alkoxy-substituted styrene copolymer hydride, characterized in that at least 50% of the aromatic nucleus of the copolymer is 10 to 10 (mol%),
【0009】[0009]
【化2】 [Chemical 2]
【0010】(上記式中R1、R2は水素原子又は炭素数
1〜5のアルキル基を表わし、R3は炭素数1〜10の
アルキル基を表わす。R1、R2、R3は同一でも異なって
いても良い。)に存する。以下、本発明を詳細に説明す
る。本発明のアルコキシ置換スチレン共重合体水素化物
はそれ単独で光ディスク基板等の光学材料用樹脂を始
め、構造材料、機能性樹脂(及びその原料)として使用
することができる。ここで、本発明のアルコキシ置換ス
チレン共重合体水素化物は、繰り返し単位として上記繰
り返し単位(1)で表わされるスチレン成分(a)と上
記繰り返し単位(2)で表わされるアルコキシ置換スチ
レン成分(b)とからなるアルコキシ置換スチレンース
チレン共重合体であって、かかる共重合体の各成分の構
成比が成分(a):成分(b)=50〜90モル%:5
0〜10モル%である共重合体の芳香核を水素化したも
のである。(In the above formulas, R 1 and R 2 represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R 3 represents an alkyl group having 1 to 10 carbon atoms, and R 1 , R 2 and R 3 represent It may be the same or different.). Hereinafter, the present invention will be described in detail. The alkoxy-substituted styrene copolymer hydride of the present invention can be used alone as a structural material and a functional resin (and a raw material thereof), including resins for optical materials such as optical disk substrates. Here, the hydride of the alkoxy-substituted styrene copolymer of the present invention comprises a styrene component (a) represented by the repeating unit (1) and a alkoxy-substituted styrene component (b) represented by the repeating unit (2) as repeating units. And an alkoxy-substituted styrene-styrene copolymer comprising: and the constituent ratio of each component of the copolymer is component (a): component (b) = 50 to 90 mol%: 5
It is a hydrogenated aromatic nucleus of the copolymer of 0 to 10 mol%.
【0011】かかる共重合体の芳香核の水素化度合とし
ては少なくとも50%、好ましくは55%〜100%、
更に好ましくは70%〜100%の範囲であればよい。
芳香核の水素化が50%未満では耐熱性が低く好ましく
ない。上述の共重合体を構成するスチレン成分(a)は
繰り返し単位(1)で表わされるものである。繰り返し
単位(1)中のR1は水素又は炭素数1〜5のアルキル
基を表わす。具体的にはスチレン、α−メチルスチレ
ン、p−メチルスチレン等が挙げられ、特にスチレンが
好ましい。The degree of hydrogenation of aromatic nuclei of the copolymer is at least 50%, preferably 55% to 100%,
More preferably, it may be in the range of 70% to 100%.
When the hydrogenation of the aromatic nucleus is less than 50%, the heat resistance is low and it is not preferable. The styrene component (a) constituting the above copolymer is represented by the repeating unit (1). R 1 in the repeating unit (1) represents hydrogen or an alkyl group having 1 to 5 carbon atoms. Specific examples thereof include styrene, α-methylstyrene, p-methylstyrene and the like, and styrene is particularly preferable.
【0012】また、アルコキシ置換スチレン成分(b)
は繰り返し単位(2)で表わされるものであり、R2は
上述と同様の低級アルキル基又は水素を表わす。R3
は、炭素数1〜10のアルキル基を表す。アルコキシ置
換スチレン成分(b)は、具体的には、p−メトキシス
チレン、p−エトキシスチレン、p−nプロポキシスチ
レン、p−isoプロポキシスチレン、p−nブトキシ
スチレン、p−isoブトキシスチレン、p−tert
ブトキシスチレン、m−tertブトキシスチレン、p
−tertブトキシ−α−メチルスチレン等が挙げられ
特にp−tertブトキシスチレンが好ましい。The alkoxy-substituted styrene component (b)
Represents a repeating unit (2), and R 2 represents a lower alkyl group as described above or hydrogen. R3
Represents an alkyl group having 1 to 10 carbon atoms. The alkoxy-substituted styrene component (b) is specifically p-methoxystyrene, p-ethoxystyrene, pn propoxystyrene, p-isopropoxystyrene, pnbutoxystyrene, p-isobutoxystyrene, p-. tert
Butoxystyrene, m-tert butoxystyrene, p
-Tert-butoxy-α-methylstyrene and the like are mentioned, and p-tert-butoxystyrene is particularly preferable.
【0013】また、上記共重合体の各成分の構成比(モ
ル比)は上述の様に成分(a):成分(b)=50〜9
0:50〜10(モル%)であるが、更に低吸水率かつ
記録膜との接着性が良好な光ディスク基板用樹脂として
利用する場合には成分(a):成分(b)=60〜9
0:40〜10(モル%)好ましくは成分(a):成分
(b)=70〜85:30〜15(モル%)の範囲とす
るのが良い。The composition ratio (molar ratio) of each component of the above-mentioned copolymer is as described above: component (a): component (b) = 50 to 9
Although it is 0:50 to 10 (mol%), when it is used as a resin for an optical disk substrate which has a lower water absorption and a better adhesiveness to a recording film, component (a): component (b) = 60 to 9
0:40 to 10 (mol%), preferably component (a): component (b) = 70 to 85:30 to 15 (mol%).
【0014】成分(b)が10モル%未満であると、光
ディスク基板等の光学材料用樹脂として使用する場合に
は情報記録膜との十分な接着性が得られず、又、50モ
ル%を超えると吸水率が高くなり、吸水によりディスク
が反るという問題が生じる。本発明の共重合体水素化物
を他の樹脂と混合して光学用材料として用いる場合はス
チレン系重合体水素化物、好ましくはスチレン系重合体
の芳香核が少なくとも50%水素化された水素化物を0
より多く99重量%以下、好ましくは5〜99重量%、
更に好ましくは10〜99重量%と、本発明のアルコキ
シ置換スチレン共重合体水素化物を1重量%より多く、
100重量%未満、好ましくは95〜1重量%、更に好
ましくは90〜1重量%となるように混合・添加すれば
よい。When the component (b) is less than 10 mol%, sufficient adhesiveness to the information recording film cannot be obtained when used as a resin for optical materials such as optical disk substrates, and 50 mol% is used. If it exceeds, the water absorption rate becomes high, and the problem that the disk warps due to water absorption occurs. When the copolymer hydride of the present invention is mixed with another resin to be used as an optical material, a styrene polymer hydride, preferably a hydride in which the aromatic nucleus of the styrene polymer is at least 50% hydrogenated. 0
More than 99% by weight, preferably 5 to 99% by weight,
More preferably, 10 to 99% by weight, more than 1% by weight of the hydride of the alkoxy-substituted styrene copolymer of the present invention,
It may be mixed and added so as to be less than 100% by weight, preferably 95 to 1% by weight, more preferably 90 to 1% by weight.
【0015】この場合スチレン系重合体水素化物は、従
来公知のスチレン系重合体を水素化したもので、好まし
くはスチレン、α−メチルスチレン、パラメチルスチレ
ン等のスチレン系重合体又はスチレンとブタジエン、イ
ソプレン等のジエン類の共重合体、或いはこれらの混合
物を核水添して得られる。また混合処理は溶液又は溶融
ブレンド等が挙げられるが、十分に混合されれば特に混
合の方法は限定されない。In this case, the hydrogenated styrene polymer is a hydrogenated product of a conventionally known styrene polymer, preferably a styrene polymer such as styrene, α-methylstyrene or paramethylstyrene, or styrene and butadiene, It is obtained by nuclear hydrogenation of a copolymer of dienes such as isoprene or a mixture thereof. The mixing treatment may be a solution or melt blending, but the mixing method is not particularly limited as long as it is sufficiently mixed.
【0016】また上記の混合使用の場合には、本発明の
ヒドロキシ置換スチレン共重合体水素化物中におけるア
ルコキシ置換スチレン成分の構成割合としては10〜4
0モル%、好ましくは15〜30モル%とするのがよ
い。10モル%未満であると光ディスク基板等の光学材
料用樹脂として用いる場合、情報記録膜との十分な接着
性が得られない。また40モル%を超えると光線透過率
の低下及び吸水率の増大という点で好ましくない。When the above mixture is used, the proportion of the alkoxy-substituted styrene component in the hydride of the hydroxy-substituted styrene copolymer of the present invention is 10-4.
The amount is 0 mol%, preferably 15 to 30 mol%. If it is less than 10 mol%, sufficient adhesiveness to the information recording film cannot be obtained when used as a resin for optical materials such as optical disk substrates. On the other hand, if it exceeds 40 mol%, it is not preferable because the light transmittance is lowered and the water absorption is increased.
【0017】スチレン−アルコキシ置換スチレン共重合
体の製法としては、特に制限はなく、アニオン重合、カ
チオン重合、ラジカル重合等が挙げられる。ラジカル重
合としては、バルク重合、溶液重合、エマルジョン重
合、懸濁重合が挙げられ、通常の過酸化物、アゾ化合物
が触媒として用いられる。アニオン重合は、炭化水素媒
体中、Na、Li、K等のアルカリ金属、或いはアルキ
ルナトリウム化合物、アルキルリチウム化合物等の有機
金属触媒により、行なわれる。重合温度は室温以下の低
温が好ましい。The method for producing the styrene-alkoxy substituted styrene copolymer is not particularly limited, and examples thereof include anionic polymerization, cationic polymerization, radical polymerization and the like. Examples of the radical polymerization include bulk polymerization, solution polymerization, emulsion polymerization and suspension polymerization, and ordinary peroxides and azo compounds are used as catalysts. The anionic polymerization is carried out in a hydrocarbon medium with an alkali metal such as Na, Li, K or an organic metal catalyst such as an alkyl sodium compound or an alkyl lithium compound. The polymerization temperature is preferably lower than room temperature.
【0018】カチオン重合は、BF3、SnCl4、Ti
Cl4等のルイス酸を触媒として低温で行なわれる。本
発明の製造方法における芳香核の水素添加に使用される
触媒としては、例えばニッケル、コバルト、ルテニウ
ム、ロジウム、白金、パラジウム等の金属又はその酸化
物、塩、錯体及びこれらを活性炭、ケイソウ土、アルミ
ナ、シリカ等の担体に担持したもの等が挙げられる。こ
れらの中でも特にラネーニッケル、ラネーコバルト、安
定化ニッケル及びパラジウム、ルテニウム、ロジウム又
は白金をカーボン、アルミナ又はシリカに担持させた触
媒が、反応性の面から好ましい。Cationic polymerization is carried out using BF 3 , SnCl 4 , Ti
It is carried out at a low temperature using a Lewis acid such as Cl 4 as a catalyst. Examples of the catalyst used for hydrogenation of aromatic nuclei in the production method of the present invention include nickel, cobalt, ruthenium, rhodium, platinum, metals such as palladium, oxides, salts and complexes thereof and activated carbon, diatomaceous earth, Examples include those supported on a carrier such as alumina and silica. Among these, Raney nickel, Raney cobalt, stabilized nickel and a catalyst in which palladium, ruthenium, rhodium or platinum are supported on carbon, alumina or silica are particularly preferable from the viewpoint of reactivity.
【0019】核水添反応は50〜250kg/cm2圧
力、100〜250℃の温度にて、溶媒としてシクロヘ
キサン、メチルシクロヘキサン、n−オクタン、デカリ
ン、テトラリン、ナフサ等の飽和炭化水素系溶媒或いは
テトラヒドロフラン(THF)等のエーテル系溶媒を用
いて行なうのが好ましい。核水添反応による芳香核の核
水添率は50%以上が好ましい。核水添率が50%未満
であると、得られる樹脂の耐熱性の低下、複屈折の増大
の問題等があり好ましくない。さらに、好ましくは水添
率は70%以上である。In the nuclear hydrogenation reaction, a saturated hydrocarbon solvent such as cyclohexane, methylcyclohexane, n-octane, decalin, tetralin and naphtha or tetrahydrofuran is used as a solvent at a pressure of 50 to 250 kg / cm 2 and a temperature of 100 to 250 ° C. It is preferable to use an ether solvent such as (THF). The nuclear hydrogenation rate of aromatic nuclei by the nuclear hydrogenation reaction is preferably 50% or more. When the nuclear hydrogenation rate is less than 50%, there is a problem that the heat resistance of the obtained resin is lowered and birefringence is increased, which is not preferable. Furthermore, the hydrogenation rate is preferably 70% or more.
【0020】本発明の共重合体の分子量は単独で光学材
料として用いる場合には、重量平均分子量で50,00
0より大きく300,000以下である。分子量の下限
は樹脂の強度により規定される。また、スチレン系重合
体水素化物と混合して用いる場合は、共重合体水素化物
の分子量は重量平均分子量で500〜500,000が
好ましく、さらに好ましくは1000〜100,000
が用いられる。スチレン系重合体水素化物の分子量は重
量平均分子量で20,000〜500,000が好まし
い。スチレン系重合体水素化物の分子量の下限は樹脂の
強度により規定される。When the copolymer of the present invention is used alone as an optical material, it has a weight average molecular weight of 50,000.
It is more than 0 and 300,000 or less. The lower limit of the molecular weight is defined by the strength of the resin. When used in mixture with a styrene polymer hydride, the weight average molecular weight of the copolymer hydride is preferably 500 to 500,000, more preferably 1000 to 100,000.
Is used. The weight average molecular weight of the hydrogenated styrene polymer is preferably 20,000 to 500,000. The lower limit of the molecular weight of the hydrogenated styrene polymer is defined by the strength of the resin.
【0021】[0021]
【実施例】以下に実施例及び比較例を挙げて本発明をよ
り具体的に説明するが、本発明はその要旨を超えない限
り、以下の実施例に限定されるものではない。なお、以
下の実施例及び比較例における各種物性は、次の方法に
よって測定したものである。 重量平均分子量:ゲル・パーミエーション・クロマ
トグラフィー(GPC)により、テトラヒドロフラン
(THF)を溶媒としてポリスチレンと同様に測定し、
ポリスチレン換算の重量平均分子量を求めた。 核水添率(%):ポリビニルシクロヘキサン系樹脂
をTHFに溶解し、UV吸収により測定した。 ガラス転移温度(℃):Dupont社製走査型示
差熱量計(DSC)を用いて、16℃/分の昇温速度で
ガラス転移温度を測定した。 光ディスク基板の光線透過率(%):JIS K
6714に準拠して測定した。EXAMPLES The present invention will be described in more detail with reference to Examples and Comparative Examples, but the present invention is not limited to the following Examples unless it exceeds the gist. In addition, various physical properties in the following Examples and Comparative Examples are measured by the following methods. Weight average molecular weight: measured by gel permeation chromatography (GPC) using tetrahydrofuran (THF) as a solvent in the same manner as polystyrene,
The polystyrene-equivalent weight average molecular weight was determined. Nuclear hydrogenation rate (%): polyvinyl cyclohexane-based resin was dissolved in THF and measured by UV absorption. Glass transition temperature (° C.): The glass transition temperature was measured at a heating rate of 16 ° C./min using a scanning differential calorimeter (DSC) manufactured by Dupont. Light transmittance of optical disk substrate (%): JIS K
It measured based on 6714.
【0022】実施例1 <共重合>還流冷却器、撹拌羽、温度計を備えた4ッ口
フラスコを窒素で十分に置換し、スチレン4.10モ
ル、パラターシャリーブトキシスチレン0.819モ
ル、および重合開始剤としてベンゾイルパーオキサイド
0.835gを入れた。撹拌しながら温度75℃に加熱
して7時間反応した。反応液を冷却後、トルエン3リッ
トルを加えて稀釈し、このトルエン溶液を多量のメタノ
ール中に滴下して重合体を析出させた。析出した重合体
を濾過・乾燥して257gのスチレン/パラターシャリ
ーブトキシスチレン共重合体を得た。得られた共重合体
の組成比は13C−NMRスペクトルからスチレン/パラ
ターシャリーブトキシスチレン=79/21(モル比)
であった。また重量平均分子量は23万(ポリスチレン
換算)であった。Example 1 <Copolymerization> A 4-necked flask equipped with a reflux condenser, stirring blades, and a thermometer was sufficiently replaced with nitrogen to obtain 4.10 mol of styrene and 0.819 mol of paratertiary butoxystyrene. Then, 0.835 g of benzoyl peroxide was added as a polymerization initiator. The mixture was heated to a temperature of 75 ° C. with stirring and reacted for 7 hours. After cooling the reaction solution, 3 liters of toluene was added and diluted, and this toluene solution was dropped into a large amount of methanol to precipitate a polymer. The precipitated polymer was filtered and dried to obtain 257 g of a styrene / paratertiary butoxystyrene copolymer. From the 13 C-NMR spectrum, the composition ratio of the obtained copolymer was styrene / paratertiary butoxystyrene = 79/21 (molar ratio).
Met. The weight average molecular weight was 230,000 (converted to polystyrene).
【0023】<水素化>この共重合体34.0gをテト
ラヒドロフラン425gに溶解して5%パラジウム/カ
ーボン触媒(NE−CHEMCAT社製)10gを添加
し、オートクレーブ内にいれ、均一に撹拌した後、水素
置換を行ない、190℃に昇温の後、水素を100kg
/cm2Gに昇圧し、水素化反応を20時間行なった。
冷却後放圧し、水素化共重合体を取り出した。UVスペ
クトルから核水素化率は98%であった。 <成型・製膜>この共重合体を小型射出成型機により、
鏡面仕上げした金型を用いて20mm×20mm×1.
5mmの成型片を成形した。<Hydrogenation> 34.0 g of this copolymer was dissolved in 425 g of tetrahydrofuran, 10 g of 5% palladium / carbon catalyst (manufactured by NE-CHEMCAT) was added, and the mixture was placed in an autoclave and uniformly stirred. Replace with hydrogen, raise the temperature to 190 ° C, and add 100 kg of hydrogen.
The pressure was increased to / cm 2 G and the hydrogenation reaction was performed for 20 hours.
After cooling, the pressure was released and the hydrogenated copolymer was taken out. From the UV spectrum, the nuclear hydrogenation rate was 98%. <Molding / Filming> This copolymer is processed by a small injection molding machine.
20mm x 20mm x 1.
A 5 mm molded piece was molded.
【0024】得られた成形片をスパッタリング装置に装
入し、まず8×10-7torr以下まで排気し、Arと
O2との混合ガスを用いてTaターゲットの反応性スパ
ッタを行ない、Ta2O5からなる干渉層(厚さ800◆
A)を形成した。次いで、Tbターゲット及びFeCo
ターゲットを用いたArガスによる2元同時スパッタに
より、TbFeCoの記録層(厚さ300◆A)を設け
た。更にTiチップを配置したAlターゲットをArガ
ス中でスパッタして厚さ300◆Aの反射層を形成し
た。The molded piece thus obtained was loaded into a sputtering apparatus, first evacuated to 8 × 10 -7 torr or less, and reactive sputtering of a Ta target was performed using a mixed gas of Ar and O 2 to produce Ta 2 Interference layer consisting of O 5 (thickness 800 ◆
A) was formed. Then, Tb target and FeCo
A TbFeCo recording layer (thickness: 300A) was provided by binary co-sputtering with Ar gas using a target. Further, an Al target on which a Ti chip was placed was sputtered in Ar gas to form a reflection layer having a thickness of 300A.
【0025】<剥離試験>この皮膜を設けた成型片の鏡
面となっている部分に1cm×1cmの範囲で1mm間
隔で直交する縦横各11本の平行線をナイフで引き、得
られた碁盤目状部分に寺岡社製粘着テープ(イミドフィ
ルムベース)を貼りつけ、これを引き剥がす事により、
密着強度を評価した。結果は1mm×1mm角の碁盤目
片試験片100枚のうち剥がれたものは1枚もなかっ
た。また吸水率は0.13%であった。<Peeling Test> Eleven parallel and vertical lines were drawn with a knife in the area of 1 cm × 1 cm at 1 mm intervals in the mirror surface of the molded piece provided with this film, and the obtained cross-cut was obtained. Stick Teraoka's adhesive tape (imide film base) on the shaped part and peel it off,
The adhesion strength was evaluated. As a result, none of 100 pieces of 1 mm × 1 mm square cross-section test pieces were peeled off. The water absorption was 0.13%.
【0026】比較例1 <水素化スチレン/パラターシャリーブトキシスチレン
共重合体の製造>実施例1のスチレンを4.10モルに
代えて0.842モルに、パラターシャリーブトキシス
チレンを0.819モルに代えて0.0722モルにし
た以外は実施例1の共重合及び水素化反応と同様の手順
を行ない、水素化スチレン/パラターシャリーブトキシ
スチレン共重合体を得た。共重合体の組成比はスチレン
/パラターシャリーブチルスチレン91.5/8.5
(モル比)で、重量平均分子量は19万、核水素化率1
00%であった。Comparative Example 1 <Production of Hydrogenated Styrene / Paratertiary Butoxystyrene Copolymer> 0.84 mol of styrene and 0.819 of paratertiary butoxystyrene were used instead of 4.10 mol of styrene in Example 1. A hydrogenated styrene / paratertiary butoxystyrene copolymer was obtained by performing the same procedure as the copolymerization and hydrogenation reaction of Example 1 except that the amount was changed to 0.0722 mol. The composition ratio of the copolymer is styrene / para-tertiarybutylstyrene 91.5 / 8.5.
(Mole ratio), weight average molecular weight 190,000, nuclear hydrogenation rate 1
It was 00%.
【0027】<成型・製膜>得られた水素化スチレン/
パラヒドロキシスチレン共重合体(スチレン/パラター
シャリーブトキシスチレン=92/8モル比)を実施例
1の成型・製膜と同様の方法を行なった後、実施例1の
剥離試験と同様の方法で試験した結果、100枚のうち
38枚剥離した。<Molding / film formation> Obtained hydrogenated styrene /
The parahydroxystyrene copolymer (styrene / paratertiary butoxystyrene = 92/8 molar ratio) was treated in the same manner as in the molding / film formation of Example 1, and then in the same manner as the peeling test of Example 1. As a result of the test, 38 out of 100 sheets were peeled off.
【0028】比較例2 <水素化ポリスチレンの製造>実施例1の水素化反応に
おいてスチレン/パラターシャリーブトキシスチレン共
重合体35.2gに代えてポリスチレン(三菱化成ポリ
テック(株)製、商品名ダイヤレックス(登録商標)H
H−102:重量平均分子量25万)100gを用いる
以外は、実施例1の水素化反応と同様の手順によって水
素化ポリスチレン(核水素化率100%、重量平均分子
量17万)を得た。Comparative Example 2 <Production of Hydrogenated Polystyrene> In the hydrogenation reaction of Example 1, polystyrene (trade name: Diamond, manufactured by Mitsubishi Kasei Polytech Co., Ltd.) was used instead of 35.2 g of styrene / paratertiary butoxystyrene copolymer. Rex (registered trademark) H
H-102: weight average molecular weight 250,000) 100 g of hydrogenated polystyrene (nuclear hydrogenation rate 100%, weight average molecular weight 170,000) was obtained by the same procedure as in the hydrogenation reaction of Example 1.
【0029】<成型・成膜>得られた水素化ポリスチレ
ン(核水素化率100%、重量平均分子量は17万)を
実施例1と同様に成型・製膜を行ない剥離試験した結
果、剥離は100枚中100枚であった。<Molding / Filming> The obtained hydrogenated polystyrene (nuclear hydrogenation rate 100%, weight average molecular weight 170,000) was subjected to molding / filming in the same manner as in Example 1 and a peeling test was conducted. The number was 100 out of 100.
【0030】比較例3 実施例1のスチレン4.10モル、パラターシャリーブ
トキシスチレン0.819モルに代えてスチレン4.0
8モル、メタクリル酸メチル3.34モルを用いて実施
例1のラジカル重合と同様の重合を行ない、得られたス
チレン/メタクリル酸メチル共重合体(スチレン/メタ
クリル酸メチル=52/48モル比、重量平均分子量2
8万)を実施例1と同様の方法で水素化反応を行ない、
核水素化率100%の水素化スチレン/メタクリル酸メ
チル共重合体を得た。この共重合体を実施例1と同様の
方法で成型・製膜を行ない剥離試験した結果、剥離は1
00枚中100枚であった。また吸収率は0.18%で
あった。表−1に実施例及び比較例の結果をまとめる。Comparative Example 3 In place of 4.10 mol of styrene and 0.819 mol of paratertiary butoxystyrene of Example 1, 4.0 of styrene was used.
Polymerization similar to the radical polymerization of Example 1 was carried out using 8 mol and 3.34 mol of methyl methacrylate, and the obtained styrene / methyl methacrylate copolymer (styrene / methyl methacrylate = 52/48 mol ratio, Weight average molecular weight 2
80,000) is hydrogenated in the same manner as in Example 1,
A hydrogenated styrene / methyl methacrylate copolymer having a nuclear hydrogenation rate of 100% was obtained. This copolymer was molded and formed into a film in the same manner as in Example 1 and was subjected to a peeling test.
The number was 100 out of 00. The absorption rate was 0.18%. Table 1 summarizes the results of Examples and Comparative Examples.
【0031】[0031]
【表1】 [Table 1]
【0032】本発明のアルコキシ置換スチレン共重合体
水素化物は、耐熱性、透明性に優れ、さらに情報記録膜
との密着性が良好であり、吸湿性も少なく、特に光ディ
スク基板等の光学用材料に好適に用いることができる。The alkoxy-substituted styrene copolymer hydride of the present invention has excellent heat resistance and transparency, good adhesion to the information recording film, and low hygroscopicity, and is an optical material especially for optical disk substrates. Can be suitably used.
Claims (4)
チレン成分(a)と下記繰り返し単位(2)で表される
アルコキシ置換スチレン成分(b)とからなり、成分
(a)と成分(b)のモル比が(a):(b)=50〜
90:50〜10(モル%)である共重合体の芳香核の
少なくとも50%が水素化されていることを特徴とする
アルコキシ置換スチレン共重合体水素化物。 【化1】 (上記式中R1、R2は水素原子又は炭素数1〜5のアル
キル基を表し、R3は炭素数1〜10のアルキル基を表
す。R1、R2、R3は同一でも異なっていても良い。)1. A styrene component (a) represented by the following repeating unit (1) and an alkoxy-substituted styrene component (b) represented by the following repeating unit (2), wherein the component (a) and the component (b) The molar ratio of (a) :( b) = 50-
An alkoxy-substituted styrene copolymer hydride characterized in that at least 50% of the aromatic nucleus of the copolymer having a ratio of 90:50 to 10 (mol%) is hydrogenated. [Chemical 1] (In the above formula, R 1 and R 2 represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and R 3 represents an alkyl group having 1 to 10 carbon atoms. R 1 , R 2 and R 3 may be the same or different. It may be.)
リーブチル基である請求項1記載のアルコキシ置換スチ
レン共重合体水素化物。2. The hydrogenated alkoxy-substituted styrene copolymer according to claim 1, wherein R 3 of the repeating unit (2) is a tertiary butyl group.
(a):(b)=70〜85:30〜15であることを
特徴とする請求項1記載のアルコキシ置換スチレン共重
合体水素化物。3. The alkoxy-substituted styrene copolymerization product according to claim 1, wherein the molar ratio of component (a) and component (b) is (a) :( b) = 70-85: 30-15. Combined hydride.
チレン共重合体水素化物からなる光学用材料。4. An optical material comprising the alkoxy-substituted styrene copolymer hydride according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4179978A JPH0625326A (en) | 1992-07-07 | 1992-07-07 | Alkoxy-substituted styrene copolymer hydride |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4179978A JPH0625326A (en) | 1992-07-07 | 1992-07-07 | Alkoxy-substituted styrene copolymer hydride |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0625326A true JPH0625326A (en) | 1994-02-01 |
Family
ID=16075317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4179978A Pending JPH0625326A (en) | 1992-07-07 | 1992-07-07 | Alkoxy-substituted styrene copolymer hydride |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0625326A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007121969A (en) * | 2005-10-31 | 2007-05-17 | Toshiba Corp | Information processing apparatus and control method thereof |
| JP2011063714A (en) * | 2009-09-17 | 2011-03-31 | Sumitomo Rubber Ind Ltd | Copolymer, rubber composition using the same and pneumatic tire |
| US9085647B2 (en) | 2004-05-31 | 2015-07-21 | Mitsubishi Gas Chemical Company, Inc. | Thermoplastic transparent resin |
-
1992
- 1992-07-07 JP JP4179978A patent/JPH0625326A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9085647B2 (en) | 2004-05-31 | 2015-07-21 | Mitsubishi Gas Chemical Company, Inc. | Thermoplastic transparent resin |
| JP2007121969A (en) * | 2005-10-31 | 2007-05-17 | Toshiba Corp | Information processing apparatus and control method thereof |
| JP2011063714A (en) * | 2009-09-17 | 2011-03-31 | Sumitomo Rubber Ind Ltd | Copolymer, rubber composition using the same and pneumatic tire |
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