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JPH06265640A - Peltier cooling semiconductor detector - Google Patents

Peltier cooling semiconductor detector

Info

Publication number
JPH06265640A
JPH06265640A JP5054414A JP5441493A JPH06265640A JP H06265640 A JPH06265640 A JP H06265640A JP 5054414 A JP5054414 A JP 5054414A JP 5441493 A JP5441493 A JP 5441493A JP H06265640 A JPH06265640 A JP H06265640A
Authority
JP
Japan
Prior art keywords
heat
semiconductor detector
peltier element
cooling
peltier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5054414A
Other languages
Japanese (ja)
Inventor
Takehiro Yamaoka
武博 山岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP5054414A priority Critical patent/JPH06265640A/en
Publication of JPH06265640A publication Critical patent/JPH06265640A/en
Pending legal-status Critical Current

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  • Measurement Of Radiation (AREA)
  • X-Ray Techniques (AREA)

Abstract

PURPOSE:To improve cooling efficiency by using a heat pipe as a cooling shaft for connecting a semiconductor detector and a Peltier element. CONSTITUTION:A Peltier element 2 cools a semiconductor detector 1 for detecting radiation. A heat sink 3 is used for heat dissipation of the Peltier element. The inside of a cryostat 5 is kept at high vauum degree with an ion pump 4. The film of kryllium or macromolecules is attached as an incident window on the top part of the cryostat 5. Single or a plurality of heat pipes 6a corresponding to cooling shafts are used for cooling the semiconductor detector 1 located at a place separated from the Peltier element. The thermal conductivity, which is larger than a cooling shaft made of copper by the extraordinary amount is obtained. A heat shield 7 has the pipe-shape structure so as to surround the heat pipes 6 and the semiconductor detector 1. The heat shield 7 is connected to the place, which is lower than the uppermost stage of the Peltier element 2 by one stage and cooled. The heat shield is used as the shield for radiation heat.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、放射線の検出を目的
とするペルチェ冷却半導体検出器に関わる。
FIELD OF THE INVENTION This invention relates to Peltier cooled semiconductor detectors for the purpose of detecting radiation.

【0002】[0002]

【従来の技術】従来のペルチェ冷却半導体検出器の主な
構成を図2及び図3に示す。図2に於いて、放射線を検
出するための半導体検出器1は、半導体検出器1を冷却
するためのペルチェ素子2と冷却シャフト6を介して接
続されている。ペルチェ素子2の放熱のためのヒートシ
ンク3にペルチェ素子2は接続されている。また、前述
のものは、クライオスタット5の内部に配置され、クラ
イオスタット5内部を高真空に保つためのイオンポンプ
4が設けられている。冷却シャフト6は、ペルチェ素子
2から離れた場所にある半導体検出器1を冷却するため
のものであり、普通、熱伝導の良い銅などが使用され
る。
2. Description of the Related Art The main structure of a conventional Peltier cooled semiconductor detector is shown in FIGS. In FIG. 2, a semiconductor detector 1 for detecting radiation is connected to a Peltier element 2 for cooling the semiconductor detector 1 via a cooling shaft 6. The Peltier element 2 is connected to a heat sink 3 for radiating heat from the Peltier element 2. Moreover, the above-mentioned thing is arrange | positioned inside the cryostat 5, and the ion pump 4 for keeping the inside of the cryostat 5 high vacuum is provided. The cooling shaft 6 is for cooling the semiconductor detector 1 which is located away from the Peltier element 2, and is usually made of copper or the like having good heat conductivity.

【0003】図3に於いて、熱シールド7は、冷却シャ
フト6や半導体検出器1の周囲を囲むようなパイプ状の
構造であり、通常、ペルチェ素子2の最上段よりも下段
と接続され冷却されており、特に輻射熱のシールドとし
て用いられる。
In FIG. 3, the heat shield 7 has a pipe-like structure surrounding the cooling shaft 6 and the semiconductor detector 1, and is usually connected to a lower stage than the uppermost stage of the Peltier element 2 for cooling. In particular, it is used as a radiant heat shield.

【0004】[0004]

【発明が解決しようとする課題】しかし、従来のペルチ
ェ冷却半導体検出器では、冷却シャフト6を銅製にして
いるとはいえ、冷却効率はそれほど良くない。また、冷
却シャフトが長い場合、シャフト6自体の重量も大きく
なり、ペルチェ素子2にかかる負荷が大きくなり、ペル
チェ素子2を破損するという問題があった。
However, in the conventional Peltier cooling semiconductor detector, although the cooling shaft 6 is made of copper, the cooling efficiency is not so good. Further, when the cooling shaft is long, the weight of the shaft 6 itself becomes large, the load applied to the Peltier element 2 becomes large, and the Peltier element 2 is damaged.

【0005】[0005]

【課題を解決するための手段】上記課題を解決するため
に、この発明は冷却シャフトとしてヒートパイプを用い
ることによって、冷却効率を改善し、半導体検出器の冷
却温度をできる限りペルチェ素子最上段の温度に近づ
け、検出器としての性能を良くするものである。また、
ヒートパイプを用いることによって軽量化も可能とな
る。更に、銅などのより線によりヒートパイプとペルチ
ェ素子を接続するという手段もある。
In order to solve the above-mentioned problems, the present invention improves the cooling efficiency by using a heat pipe as a cooling shaft and keeps the cooling temperature of the semiconductor detector as high as possible in the uppermost stage of the Peltier device. The temperature is brought close to the temperature to improve the performance as a detector. Also,
Weight reduction can also be achieved by using a heat pipe. Furthermore, there is also a means of connecting the heat pipe and the Peltier element with a stranded wire such as copper.

【0006】[0006]

【作用】上記のように構成されたペルチェ冷却半導体検
出器においては、ヒートパイプがペルチェ素子の冷却側
の熱をすばやく検出器に伝えることにより冷却効率を改
善する。ヒートパイプとは、中空のパイプ中を、作動液
が蒸発・凝縮を繰り返しながら移動することで、高温部
から熱を奪い、低温部に放熱するものである。ヒートパ
イプは中空であり、軽量であるため、ペルチェ素子への
負荷を小さくすることができる。また、曲げの自由な銅
などのより線によりヒートパイプとペルチェ素子を接続
することにより、ペルチェ素子への負荷を小さくするこ
とができる
In the Peltier-cooled semiconductor detector configured as described above, the heat pipe quickly transfers the heat on the cooling side of the Peltier element to the detector to improve the cooling efficiency. The heat pipe is a pipe in which a working liquid moves in a hollow pipe while repeatedly evaporating and condensing to take heat from a high temperature portion and radiate the heat to a low temperature portion. Since the heat pipe is hollow and lightweight, the load on the Peltier device can be reduced. In addition, the load on the Peltier element can be reduced by connecting the heat pipe and the Peltier element with a stranded wire such as copper that can be freely bent.

【0007】[0007]

【実施例】以下に本発明の実施例を図1に基づいて説明
する。図中の1は放射線を検出するための半導体検出
器、2は半導体検出器1を冷却するためのペルチェ素
子、3はペルチェ素子2の放熱のためのヒートシンク、
4はクライオスタット5の内部を高真空に保つためのイ
オンポンプである。クライオスタット5の頂部には、ベ
リリウムまたは高分子の膜(図示せず)が入射窓として
取り付けられている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG. In the figure, 1 is a semiconductor detector for detecting radiation, 2 is a Peltier element for cooling the semiconductor detector 1, 3 is a heat sink for radiating heat from the Peltier element 2,
Reference numeral 4 is an ion pump for maintaining a high vacuum inside the cryostat 5. A beryllium or polymer film (not shown) is attached to the top of the cryostat 5 as an entrance window.

【0008】6aは単数または複数のヒートパイプで構
成される従来例の冷却シャフト6に相当する。ヒートパ
イプ6aは、ペルチェ素子2から離れた場所にある半導
体検出器1を冷却するためのものであり、熱伝導が良い
と言われる銅製の冷却シャフトよりも桁違いに大きい熱
伝導度が得られる。7は熱シールドで、冷却シャフト6
や半導体検出器1の周囲を囲むようなパイプ状の構造で
あり、ペルチェ素子の最上段よりも1段下と接続され冷
却されており特に輻射熱のシールドとして用いられる。
Reference numeral 6a corresponds to a conventional cooling shaft 6 which is composed of a single or a plurality of heat pipes. The heat pipe 6a is for cooling the semiconductor detector 1 which is located away from the Peltier element 2, and has a thermal conductivity that is orders of magnitude higher than that of a copper cooling shaft which is said to have good thermal conductivity. . 7 is a heat shield, and a cooling shaft 6
Also, it has a pipe-like structure surrounding the semiconductor detector 1 and is connected to a stage below the uppermost stage of the Peltier element to be cooled, and is particularly used as a shield for radiant heat.

【0009】本発明の他の実施例を図4に基づいて説明
する。熱シールド7は、複数個の支持リング9でクライ
オスタット5の内壁に固定される。支持リング9はシリ
コンゴムやふっそ系のゴム製などの熱伝導の悪い材質の
もので、熱シールドを十分に冷却することができる。ま
た、ヒートパイプ6aも前記と同様の支持リング9で熱
シールド7の内壁に固定される。ヒートパイプ6a自体
は、作動液が循環する中空の部分のみ熱伝導度が非常に
良く、パイプ材は熱伝導はあまり良くないため、このよ
うにしても冷却効率にはあまり影響しない。このよう
な、支持リングを用いることによって、ヒートパイプ6
aとペルチェ素子2との接続を曲げの自由な銅などのよ
り線10で行い、ペルチェ素子への負荷を軽減すること
もできる。これは段数が多く、最上段の部分が小さいペ
ルチェ素子を使用する場合は特に効果がある。
Another embodiment of the present invention will be described with reference to FIG. The heat shield 7 is fixed to the inner wall of the cryostat 5 by a plurality of support rings 9. The support ring 9 is made of a material having poor heat conduction, such as silicon rubber or fluffy rubber, and can sufficiently cool the heat shield. The heat pipe 6a is also fixed to the inner wall of the heat shield 7 by the support ring 9 similar to the above. The heat pipe 6a itself has a very good thermal conductivity only in the hollow portion in which the working fluid circulates, and the heat conduction of the pipe material is not so good. Therefore, even in this case, the cooling efficiency is not much affected. By using such a support ring, the heat pipe 6
It is also possible to reduce the load on the Peltier element by connecting the a and the Peltier element 2 with the stranded wire 10 made of copper or the like which can be freely bent. This is particularly effective when using a Peltier element having a large number of stages and a small uppermost portion.

【0010】なお、上記において、半導体検出器1とペ
ルチェ素子2の接続に複数本のヒートパイプ6aを用い
ることでも良い。また、上記において、半導体検出器1
とペルチェ素子2の接続に1本のヒートパイプ6aと銅
のより線10を用いるもよい。
In the above, a plurality of heat pipes 6a may be used to connect the semiconductor detector 1 and the Peltier device 2. Further, in the above, the semiconductor detector 1
It is also possible to use one heat pipe 6a and the copper stranded wire 10 for connecting the Peltier device 2 to the Peltier element 2.

【0011】更に、上記において、半導体検出器1とペ
ルチェ素子2の接続に複数のヒートパイプ6aと銅のよ
り線0を用いるも良い。
Furthermore, in the above, a plurality of heat pipes 6a and a copper strand 0 may be used to connect the semiconductor detector 1 and the Peltier element 2.

【0012】[0012]

【発明の効果】この発明は、以上説明したように冷却シ
ャフトとしてヒートパイプを用いることによって、冷却
効率を改善し、半導体検出器の冷却温度をできる限りペ
ルチェ素子最上段の温度に近づけ、検出器としての性能
を良くしている。また、ヒートパイプは中空であり、軽
量であるため、ペルチェ素子への負荷を小さくすること
ができる。更に、銅などのより線によりヒートパイプと
ペルチェ素子を接続することにより、ペルチェ素子への
負荷を小さくすることができる
As described above, according to the present invention, by using the heat pipe as the cooling shaft, the cooling efficiency is improved, and the cooling temperature of the semiconductor detector is made as close as possible to the temperature of the uppermost stage of the Peltier element. The performance as is improved. Moreover, since the heat pipe is hollow and lightweight, the load on the Peltier device can be reduced. Furthermore, the load on the Peltier element can be reduced by connecting the heat pipe and the Peltier element with a stranded wire such as copper.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明のペルチェ冷却半導体検出器の主な構造
を示した断面図である。
FIG. 1 is a sectional view showing the main structure of a Peltier-cooled semiconductor detector of the present invention.

【図2】ペルチェ冷却半導体検出器の従来の方法の断面
図である。
FIG. 2 is a cross-sectional view of a conventional method of Peltier cooled semiconductor detector.

【図3】ペルチェ冷却半導体検出器の他の従来の方法の
断面図である。
FIG. 3 is a cross-sectional view of another conventional method of Peltier cooled semiconductor detector.

【図4】本発明の別の実施例のペルチェ冷却半導体検出
器の主な構造を示した断面図である。
FIG. 4 is a sectional view showing the main structure of a Peltier cooled semiconductor detector according to another embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 半導体検出器 2 ペルチェ素子 3 ヒートシンク 4 イオンポンプ 5 クライオスタット 6 冷却シャフト 6a ヒートパイプ 7 熱シールド 8 支持リング 10 曲げの自由な銅などのより線 1 Semiconductor Detector 2 Peltier Element 3 Heat Sink 4 Ion Pump 5 Cryostat 6 Cooling Shaft 6a Heat Pipe 7 Heat Shield 8 Support Ring 10 Stranded Wire such as Freely Bendable Copper

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 放射線を検出するための半導体検出器、
半導体検出器を冷却するためのペルチェ素子、ペルチェ
素子の放熱のためのヒートシンク、クライオスタットの
内部を高真空に保つためのイオンポンプ、ペルチェ素子
から離れた場所にある半導体検出器を冷却するための冷
却シャフトを有する半導体検出器において、半導体検出
器とペルチェ素子の接続に1本のヒートパイプを用いる
ことを特徴とするペルチェ冷却半導体検出器。
1. A semiconductor detector for detecting radiation,
Peltier element for cooling the semiconductor detector, heat sink for radiating heat from the Peltier element, ion pump for maintaining a high vacuum inside the cryostat, cooling for cooling the semiconductor detector located away from the Peltier element A semiconductor detector having a shaft, wherein a single heat pipe is used to connect the semiconductor detector and the Peltier element to each other.
JP5054414A 1993-03-15 1993-03-15 Peltier cooling semiconductor detector Pending JPH06265640A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5054414A JPH06265640A (en) 1993-03-15 1993-03-15 Peltier cooling semiconductor detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5054414A JPH06265640A (en) 1993-03-15 1993-03-15 Peltier cooling semiconductor detector

Publications (1)

Publication Number Publication Date
JPH06265640A true JPH06265640A (en) 1994-09-22

Family

ID=12970048

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5054414A Pending JPH06265640A (en) 1993-03-15 1993-03-15 Peltier cooling semiconductor detector

Country Status (1)

Country Link
JP (1) JPH06265640A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009059743A (en) * 2007-08-30 2009-03-19 Shimadzu Corp Peltier cooling type semiconductor X-ray detector
GB2507174A (en) * 2012-09-06 2014-04-23 Johnson Matthey Plc Density Profiler
CN104316953A (en) * 2007-07-02 2015-01-28 皇家飞利浦电子股份有限公司 Thermally stabilized PET detector for hybrid PET-MR system

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104316953A (en) * 2007-07-02 2015-01-28 皇家飞利浦电子股份有限公司 Thermally stabilized PET detector for hybrid PET-MR system
JP2009059743A (en) * 2007-08-30 2009-03-19 Shimadzu Corp Peltier cooling type semiconductor X-ray detector
GB2507174A (en) * 2012-09-06 2014-04-23 Johnson Matthey Plc Density Profiler
GB2507174B (en) * 2012-09-06 2016-03-23 Johnson Matthey Plc Radiation detector
US10458834B2 (en) 2012-09-06 2019-10-29 Johnson Matthey Public Limited Company Radiation detector

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