JPH0685395B2 - Heating device for semiconductor manufacturing equipment - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heating device in a semiconductor manufacturing apparatus, and more particularly to a heating device for an apparatus requiring a high temperature of about 1000 ° C. or higher, such as an epitaxial apparatus, a diffusion apparatus, an annealing apparatus, an oxidizing apparatus and a nitriding apparatus. .

[0002]

2. Description of the Related Art A sectional view of a conventional typical heating apparatus using a lamp light source in a semiconductor manufacturing apparatus is shown in FIG. 2 or 3, since the semiconductor substrate 8 in the process chamber 7 needs to be heated to about 1000 ° C. or higher, the filament 3 which is a heat source can be heated to several thousand ° C. or higher. However, the surface temperature of the lamp tube wall 4 portion constituting the lamp 2 cannot be raised to a temperature higher than 600 ° C. This is because when the temperature exceeds this temperature, gas is released from the tube wall 4 into the lamp 2, impairing the vacuum degree inside the lamp and giving an abnormal halogen cycle of the lamp, and as a result, the life of the filament 3 is significantly shortened. is there.

For this reason, in the conventional heating device 1, the lamp tube wall 4 needs to be maintained at a low temperature even when the filament 3 portion is in a high temperature state. Therefore, as shown in FIG. 2 or 3, air is blown in to cool the lamp tube wall. Was. The lamp reflector 5 has its rear surface circulated with water for cooling. When the lamp is water-cooled, the water absorbs the light rays from the heat source very well, so that the heat ray cannot be transmitted to the process champer 7, and there are also problems of insulation and corrosion of electric parts.

Therefore, the air for air cooling in the conventional device is supplied from the blower 10 or the gas line of the factory auxiliary equipment through the pressure adjusting device and introduced into the cavity 12 containing the lamp 2 and the reflection plate 5 to cool the lamp 2. After that it was exhausted. Therefore, as the amount of heat required for the lamp increases, the required amount of air also increases, the device including the cavity 12 becomes larger, and the blower needs to have a larger capacity, resulting in larger noise and vibration. There were problems such as the need for large amounts of power. Further, even if the blower is not used, the large amount of air required is a heavy burden on the facilities attached to the factory. Furthermore, since the heat exhausted from the device has a significant impact on the environment, the heat exchanger 11
Is required, which is a factor of increasing the size of the device. Further, water molecules contained in the cooling air, such as carbon dioxide gas, absorb heat rays and thus deteriorate energy efficiency.

[0005]

SUMMARY OF THE INVENTION Therefore, an object of the present invention is to downsize the entire device, to significantly reduce noise, vibration and electric power, to prolong the life of the filament, and to improve energy efficiency. To do.

[0006]

In order to achieve the above object, the heating apparatus of the present invention is a depressurizable chamber having a reflection plate that enables water cooling and a window that is optically transparent to a required wavelength range ( (Vacuum chamber) and a filament which is disposed in the chamber as it is without any lamp tube wall and which is arranged as it is, and an inert gas such as Ar or Xe is contained in the depressurized chamber to prevent discharge. It will be introduced.

[0007]

EXAMPLE FIG. 1 is a sectional view of a heating apparatus of the present invention. In FIG. 1, a heating device 1 is composed of a depressurizable chamber 13 having a reflection plate 5 and an optically transparent window 6, and a filament 3 which is arranged in the chamber 13 without any lamp tube wall and is exposed. It Filament 3
Is appropriately supported by an electrical and thermal insulator 14 such as ceramic, and is connected to an external power source (not shown) so that the current flowing through the filament 3 can be controlled. Below the transparent window 6 is the process chamber 7
And the semiconductor substrate 8 is placed therein. The semiconductor substrate 8 is heated by passing an electric current through the filament 3.

The reflecting plate 5 has a shape such that the radiant heat from the filament 3 as a heat source can be efficiently directed to the semiconductor substrate 8 in the process chamber 7, for example, its cross section has a semicircular shape or a parabolic shape. Further, the point that the reflector 5 is cooled by the water circulated on its back surface is similar to the conventional device. The window 6 is made of a material that is optically transparent to the required wavelength range. These materials are shown in Table 1.

Table 1 In Table 1, the number in μ represents the wavelength. The numerical value in parentheses is called a wave number, and is a value indicating how many cycles of a wave exist within a length of 1 cm. Generally 0.78μ (780mμ) to 1mm (10
An electromagnetic wave having a wavelength of about 00μ) is called infrared light. Although there is no particular strict definition, a region near 0.78 μ to 3 μ near visible light is conceptually called near infrared, and a wavelength region longer than that is often called far infrared. It is considered that far infrared rays are effective in heating the substance. Based on this idea, a material that can transmit wavelengths as long as possible is excellent as a window material, but depending on the object, it is expensive, it is difficult to obtain a large area, it is difficult to obtain mechanical strength,
Since the physical and chemical properties may not be excellent, the optimum one will differ depending on the shape of the device used as the window material and the usage conditions.

The vacuum chamber 13 can be depressurized by a vacuum pump 16, but has a pressure adjusting device 15 for stabilizing light emission. After the inside of the vacuum chamber 13 is evacuated, a nozzle 17 for introducing an inert gas such as Ar or Xe and a flow rate controller 18 are provided to prevent electric discharge. Further, the heating device 1 of the present invention has a nozzle 19 and a flow rate controller 20 so that a gas (for example, tungsten halide) containing a constituent metal (for example, tungsten) of the filament can be introduced into the vacuum chamber. . This gas acts like a halogen cycle in a halogen lamp to deposit filament metal on the filament 1 and compensate for filament metal lost by evaporation. This can extend the life of the filament.

The vacuum chamber is constantly monitored by a vacuum degree meter 21 and a surface thermometer 22, and the power supply to the filament 3 due to the occurrence of an abnormality is automatically stopped to generate an alarm. Although the embodiment of the semiconductor manufacturing apparatus according to the present invention has been described, it goes without saying that the present invention can be applied to a heating device other than the semiconductor manufacturing apparatus.

[0012]

1) Since the heating device of the present invention has a structure in which it is not necessary to provide a lamp tube wall, a blower, an air guide passage, and a cavity are not required, and the size of the device can be greatly reduced. 2) Since the capacity of the vacuum chamber can be made small, the required vacuum pump may be a small one, and noise, vibration, and electric power are significantly reduced as compared with a large blower. 3) In the conventional lamp, the outgas released from the wall of the lamp tube into the lamp stays in the lamp and shortens the life of the filament. Since the gas containing the filament-constituting metal introduced into the vacuum chamber causes the filament metal to be deposited on the filament and compensates for the filament metal lost due to evaporation, The life can be extended. 4) In the conventional air-cooling method, gas molecules such as water and carbon dioxide in the air-cooled gas absorb the radiant energy from the lamp to deteriorate the efficiency, but in the present invention, an inert gas such as Ar or Xe or halogen. Since it is filled with a gas such as tungsten oxide, it does not deteriorate the efficiency.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a heating device of the present invention.

FIG. 2 is a sectional view of a conventional heating device.

FIG. 3 is a cross-sectional view of a conventional heating device.

[Explanation of symbols]

 1 Heating Device 2 Lamp 3 Filament 4 Tube Wall 5 Reflector 6 Window 7 Process Chamber 8 Semiconductor Substrate 9 Air Duct 10 Blower 11 Heat Exchanger 12 Cavity 13 Chamber 14 Filament Support 15 Pressure Regulator 16 Vacuum Pump 17 Inert Gas Introduction nozzle 18 Inert gas flow rate controller 19 Halogenated gas introduction nozzle 20 Halogenated gas flow rate controller 21 Vacuum degree meter 22 Surface thermometer

Claims (3)

[Claims] 1. A depressurizable chamber having a reflection plate and an optically transparent window, an exposed filament having no lamp tube wall as a heat source disposed in the chamber, and introduced into the chamber. A heating device having an inert gas. 2. The heating device according to claim 1, further comprising a gas containing a filament-constituting metal introduced into the chamber. 3. The heating device according to claim 1, further comprising a monitoring device for monitoring overheating or an abnormality in the degree of vacuum.