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JPH0697145A - Semiconductor manufacturing equipment - Google Patents

Semiconductor manufacturing equipment

Info

Publication number
JPH0697145A
JPH0697145A JP24750292A JP24750292A JPH0697145A JP H0697145 A JPH0697145 A JP H0697145A JP 24750292 A JP24750292 A JP 24750292A JP 24750292 A JP24750292 A JP 24750292A JP H0697145 A JPH0697145 A JP H0697145A
Authority
JP
Japan
Prior art keywords
substrate
semiconductor manufacturing
manufacturing apparatus
back surface
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP24750292A
Other languages
Japanese (ja)
Inventor
Kazuhiko Sumi
一彦 角
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP24750292A priority Critical patent/JPH0697145A/en
Publication of JPH0697145A publication Critical patent/JPH0697145A/en
Withdrawn legal-status Critical Current

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  • Cleaning In General (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

(57)【要約】 【目的】 本発明は、処理液の中に基板を浸漬して処理
する半導体製造装置に関し、特に基板の裏面に気泡が付
着するのを防止できる半導体製造装置の提供を目的とす
る。 【構成】 基板12を処理する処理液11を入れる容器21
と、基板12の裏面を保持して処理液11の中に浸漬する基
板保持手段31とを含んでなる半導体製造装置において、
基板保持手段31は、処理液11の中で基板12を水平面に対
して傾斜させた状態で保持させるように構成する。
(57) [Summary] [Object] The present invention relates to a semiconductor manufacturing apparatus in which a substrate is immersed in a processing liquid for processing, and particularly to provide a semiconductor manufacturing apparatus capable of preventing bubbles from adhering to the back surface of the substrate. And [Constitution] Container 21 for containing treatment liquid 11 for treating substrate 12
And a substrate holding means 31 for holding the back surface of the substrate 12 and immersing it in the processing liquid 11,
The substrate holding means 31 is configured to hold the substrate 12 in the treatment liquid 11 in a state of being inclined with respect to the horizontal plane.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、処理液の中に基板を浸
漬して処理する半導体製造装置、特に基板の裏面に気泡
が付着するのを防止できる半導体製造装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus in which a substrate is immersed in a processing liquid for processing, and more particularly to a semiconductor manufacturing apparatus capable of preventing bubbles from adhering to the back surface of the substrate.

【0002】[0002]

【従来の技術】次に、従来の半導体製造装置、たとえば
透明な石英基板の表面に被着したクロム(Cr) 膜をその
エッチング液によりエッチングして除去する従来の半導
体製造装置について図3を参照して説明する。
2. Description of the Related Art Next, a conventional semiconductor manufacturing apparatus, for example, a conventional semiconductor manufacturing apparatus for removing a chromium (Cr) film deposited on the surface of a transparent quartz substrate by etching it with an etching solution is shown in FIG. And explain.

【0003】図3は、従来の半導体製造装置の説明図で
あって、図3(a) はエッチング液に石英基板を浸漬する
前の状態を模式的に示す要部側断面図、図3(b) はエッ
チング液に石英基板を浸漬中の状態を模式的に示す要部
側断面図、図3(c) は基板ホルダーの模式的な平面図で
ある。
FIG. 3 is an explanatory view of a conventional semiconductor manufacturing apparatus, and FIG. 3 (a) is a side sectional view of an essential part schematically showing a state before a quartz substrate is immersed in an etching solution. FIG. 3B is a side cross-sectional view of a main part schematically showing a state where the quartz substrate is immersed in the etching liquid, and FIG. 3C is a schematic plan view of the substrate holder.

【0004】図3において、11はクロム(Cr) を溶解す
るエッチング液、12は正方形をした透明な石英基板、13
は石英基板12の表面に被着したクロム膜、14はクロム膜
13の表面に被着して所定のパターンにされたレジスト、
21はエッチング液11を入れる容器、22は容器21内にエッ
チング液11を供給するエッチング液供給管、23は石英基
板12の裏面を保持してエッチング液11に浸漬する基板ホ
ルダーである。
In FIG. 3, 11 is an etching solution that dissolves chromium (Cr), 12 is a square transparent quartz substrate, and 13 is a transparent quartz substrate.
Is a chrome film deposited on the surface of the quartz substrate 12, and 14 is a chrome film
A resist applied to the surface of 13 and formed into a predetermined pattern,
Reference numeral 21 is a container for containing the etching liquid 11, 22 is an etching liquid supply pipe for supplying the etching liquid 11 into the container 21, and 23 is a substrate holder for holding the back surface of the quartz substrate 12 and immersing it in the etching liquid 11.

【0005】このような従来の半導体製造装置により、
石英基板12の表面に被着したクロム膜13をエッチングし
て半導体装置の製造等に使用する露光用のレチクルを製
作するには、まず石英基板12をその表面側 (クロム膜1
3) を上に向けて基板ホルダー23のヘッド23a に水平状
態でセットするとともに、エッチング液供給管22から所
定量のエッチング液11を空の容器21内に供給する。
With such a conventional semiconductor manufacturing apparatus,
In order to fabricate an exposure reticle used for manufacturing a semiconductor device by etching the chromium film 13 deposited on the surface of the quartz substrate 12, first the quartz substrate 12 is placed on the surface side (chrome film 1
3) is set in the horizontal state on the head 23a of the substrate holder 23 with the side 3) facing upward, and a predetermined amount of the etching liquid 11 is supplied into the empty container 21 from the etching liquid supply pipe 22.

【0006】容器21内に所定量のエッチング液11の供給
を完了したら、昇降・回転装置(図示せず)に連結した
基板ホルダー23の昇降・回転軸23b を介してヘッド23a
を矢印Dに下降して石英基板12をエッチング液11の中に
浸漬し、レジスト14から露出したクロム膜13をエッチン
グして除去する。
When the supply of a predetermined amount of etching solution 11 into the container 21 is completed, the head 23a is moved through the lifting / rotating shaft 23b of the substrate holder 23 connected to the lifting / rotating device (not shown).
Is lowered to an arrow D, the quartz substrate 12 is immersed in the etching liquid 11, and the chromium film 13 exposed from the resist 14 is etched and removed.

【0007】次いで、昇降・回転装置によりヘッド23a
と石英基板12とを矢印U方向に上昇させてエッチング液
11の中から取り出した後に、昇降・回転装置によりヘッ
ド23aとともに矢印R方向に回転している石英基板12に
付着しているエッチング液11を水洗して落とす。
Next, the head 23a is lifted by the lifting / rotating device.
And quartz substrate 12 in the direction of arrow U
After being taken out from inside 11, the etching solution 11 adhering to the quartz substrate 12 rotating in the direction of the arrow R together with the head 23a is washed with water and dropped by a lifting / rotating device.

【0008】この後、この石英基板12からレジスト14を
レジスト剥離液(図示せず)により剥離することにより
上述のレチクルが完成することとなる。
After that, the resist 14 is removed from the quartz substrate 12 with a resist remover (not shown), whereby the reticle described above is completed.

【0009】[0009]

【発明が解決しようとする課題】前述したように従来の
半導体製造装置においては、エッチング液11の中に石英
基板12を水平な状態で浸漬している。
As described above, in the conventional semiconductor manufacturing apparatus, the quartz substrate 12 is immersed in the etching solution 11 in a horizontal state.

【0010】ところで、一辺の長さが160mm程度に
なるような大きな石英基板12を従来の半導体製造装置に
よりエッチング液11に浸漬すると、その裏面に大きな気
泡15が付着することが少なくない。
By the way, when a large quartz substrate 12 having a side length of about 160 mm is immersed in the etching solution 11 by a conventional semiconductor manufacturing apparatus, large bubbles 15 often adhere to the back surface thereof.

【0011】そして大きな体積の気泡15にあっては、そ
の大きな浮力により基板ホルダー23のヘッド23a から石
英基板12を浮かし、ヘッド23a から石英基板12を離脱さ
せて容器21の底に落下させることが少なからずあった。
In the case of a large volume of bubbles 15, the quartz substrate 12 can be floated from the head 23a of the substrate holder 23 by its large buoyancy, and the quartz substrate 12 can be detached from the head 23a and dropped on the bottom of the container 21. There was a little.

【0012】本発明は、このような問題を解消するため
になされたものであって、その目的は石英基板の裏面に
気泡が付着するのを防止できる半導体製造装置の提供を
目的とする。
The present invention has been made to solve such a problem, and an object thereof is to provide a semiconductor manufacturing apparatus capable of preventing bubbles from adhering to the back surface of a quartz substrate.

【0013】[0013]

【課題を解決するための手段】前記目的は図1に示すよ
うに、基板12を処理する処理液11を入れる容器21と、基
板12の裏面を保持して処理液11の中に浸漬する基板保持
手段31とを含んでなる半導体製造装置において、基板保
持手段31は、処理液11の中で基板12を水平面に対して傾
斜させた状態で保持することを特徴とする半導体製造装
置により達成される。
As shown in FIG. 1, a container 21 for containing a processing liquid 11 for processing a substrate 12 and a substrate for holding the back surface of the substrate 12 and immersing the substrate in the processing liquid 11 are provided. In the semiconductor manufacturing apparatus including the holding means 31, the substrate holding means 31 is achieved by the semiconductor manufacturing apparatus characterized by holding the substrate 12 in the treatment liquid 11 in a state of being inclined with respect to the horizontal plane. It

【0014】[0014]

【作用】本発明の半導体製造装置においては、基板保持
手段31が基板12を水平面に対して傾斜させた状態で処理
液11の中に浸漬するように構成している。
In the semiconductor manufacturing apparatus of the present invention, the substrate holding means 31 is configured to immerse the substrate 12 in the processing liquid 11 with the substrate 12 inclined with respect to the horizontal plane.

【0015】したがって、処理液11に浸漬直後の基板12
の裏面に気泡15 (図3の(b) 参照)が付着していたとし
ても、基板12の裏面は水平面に対して傾斜しているため
に気泡15は短時間の内に離脱することとなる。
Therefore, the substrate 12 immediately after being immersed in the treatment liquid 11
Even if air bubbles 15 (see (b) in FIG. 3) adhere to the back surface of the substrate, the air bubbles 15 will be released within a short time because the back surface of the substrate 12 is inclined with respect to the horizontal plane. .

【0016】[0016]

【実施例】以下、本発明の請求項1に係る実施例の半導
体製造装置について図を参照しながら説明する。図1
は、本発明の請求項1に係る実施例の説明図であって、
図1(a) はエッチング液に石英基板を浸漬前の状態を模
式的に示す要部側断面図、図1(b) はエッチング液に石
英基板を浸漬中の状態を模式的に示す要部側断面図であ
る。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor manufacturing apparatus of an embodiment according to claim 1 of the present invention will be described below with reference to the drawings. Figure 1
Is an explanatory diagram of an embodiment according to claim 1 of the present invention,
FIG. 1 (a) is a side sectional view schematically showing a state before immersing the quartz substrate in the etching solution, and FIG. 1 (b) is a main section schematically showing a state during immersing the quartz substrate in the etching solution. It is a sectional side view.

【0017】なお、本明細書においては、同一部品、同
一材料等に対しては全図をとおして同じ符号を付与して
ある。図1(a) 及び(b) に示すように本発明の請求項1
に係る実施例の半導体製造装置は、図3を参照して説明
した従来の半導体製造装置の基板ホルダー23を、基板ホ
ルダー31に代えて構成したものである。
In the present specification, the same parts, the same materials and the like are designated by the same reference numerals throughout the drawings. Claim 1 of the present invention as shown in FIGS.
The semiconductor manufacturing apparatus according to the embodiment of the present invention is configured by replacing the substrate holder 23 of the conventional semiconductor manufacturing apparatus described with reference to FIG. 3 with a substrate holder 31.

【0018】この基板ホルダー31は、従来の半導体製造
装置の基板ホルダー23のヘッド23aを水平面に対して傾
斜、たとえば3度傾斜させて構成されて、石英基板12を
水平面に対して傾斜させた状態でエッチング液11の中に
浸漬する。
The substrate holder 31 is constructed by inclining the head 23a of the substrate holder 23 of the conventional semiconductor manufacturing apparatus with respect to the horizontal plane, for example, 3 degrees, so that the quartz substrate 12 is inclined with respect to the horizontal plane. To be immersed in the etching solution 11.

【0019】したがって、基板ホルダー31により処理液
11の中に浸漬された直後の基板12の裏面に気泡15 (図3
の(b) 参照) が付着していたとしても、基板12の裏面は
水平面に対して傾斜しているために気泡15は短時間の内
に離脱することとなる。
Therefore, the substrate holder 31 causes the processing liquid to flow.
Bubbles 15 (Fig. 3) on the back surface of substrate 12 immediately after being immersed in 11
(See (b)), the bubbles 15 will be released within a short time because the back surface of the substrate 12 is inclined with respect to the horizontal plane.

【0020】斯くして本発明の一実施例の半導体製造装
置は、処理液11の中に浸漬された石英基板12の裏面に上
述のような気泡15を付着させることがない。また、以上
説明した本発明の請求項1に係る実施例の半導体製造装
置に、図2で示す如く容器21内のエッチング液11を攪拌
する攪拌手段、たとえば一端を容器21内に突っ込んだ汲
み上げ管32a と、この汲み上げ管32a の他端に連結した
噴流ポンプ32b と、一端を噴流ポンプ32b に連結して他
端を容器21内に突っ込んだ吐出管32c とで構成した攪拌
手段を付設し、容器21内のエッチング液11を攪拌できる
ようにしたものが本発明の請求項2に係る実施例の半導
体製造装置である。
Thus, the semiconductor manufacturing apparatus of one embodiment of the present invention does not cause the above-mentioned bubbles 15 to adhere to the back surface of the quartz substrate 12 immersed in the treatment liquid 11. Further, in the semiconductor manufacturing apparatus according to the first embodiment of the present invention described above, a stirring means for stirring the etching solution 11 in the container 21 as shown in FIG. 2, for example, a pumping pipe having one end inserted into the container 21. An agitating means composed of 32a, a jet pump 32b connected to the other end of the pumping pipe 32a, and a discharge pipe 32c having one end connected to the jet pump 32b and the other end protruding into the container 21 is provided. The semiconductor manufacturing apparatus of an embodiment according to claim 2 of the present invention is one in which the etching liquid 11 in 21 can be agitated.

【0021】この本発明の請求項2に係る実施例の半導
体製造装置において噴流ポンプ32bを作動することによ
り、容器21内のエッチング液11は、汲み上げ管32a →噴
流ポンプ32b →吐出管32c を矢印のように経由して容器
21内に吐出し、石英基板12の裏面に付着している気泡15
をよりダイナミックに離脱することとなる。
By operating the jet pump 32b in the semiconductor manufacturing apparatus according to the second embodiment of the present invention, the etching solution 11 in the container 21 causes the pumping pipe 32a, the jet pump 32b, and the discharge pipe 32c to be indicated by arrows. Via container like
Bubbles 15 ejected into 21 and adhering to the back surface of quartz substrate 12
Will be released more dynamically.

【0022】[0022]

【発明の効果】以上説明したように本発明は、基板の裏
面に気泡の付着するのを防止できる半導体製造装置の提
供を可能にする。
As described above, the present invention makes it possible to provide a semiconductor manufacturing apparatus capable of preventing bubbles from adhering to the back surface of a substrate.

【0023】したがって、本発明の半導体製造装置を採
用すれば、半導体装置を歩留り良く製造できることとな
る。
Therefore, if the semiconductor manufacturing apparatus of the present invention is adopted, semiconductor devices can be manufactured with high yield.

【図面の簡単な説明】[Brief description of drawings]

【図1】は、本発明の請求項1に係る実施例の説明図FIG. 1 is an explanatory diagram of an embodiment according to claim 1 of the present invention.

【図2】は、本発明の請求項2に係る実施例の説明図FIG. 2 is an explanatory diagram of an embodiment according to claim 2 of the present invention.

【図3】は、従来の半導体製造装置の説明図FIG. 3 is an explanatory diagram of a conventional semiconductor manufacturing apparatus.

【符号の説明】[Explanation of symbols]

11は、エッチング液 (処理液) 12は、石英基板 (基板) 13は、クロム膜 14は、レジスト 15は、気泡 21は、容器、 22は、エッチング液供給管 (処理液供給手段) 23は、基板ホルダー (基板保持手段) 23a は、ヘッド 23b は、昇降・回転軸 31は、基板ホルダー (基板保持手段) 32は、攪拌手段 32a は、汲み上げ管 32b は、噴流ポンプ 32c は、吐出管 11 is an etching liquid (treatment liquid) 12, a quartz substrate (substrate) 13, a chrome film 14, a resist 15, a bubble 21, a container, 22 is an etching liquid supply pipe (treatment liquid supply means) 23 , Substrate holder (substrate holding means) 23a, head 23b, lifting / rotating shaft 31, substrate holder (substrate holding means) 32, stirring means 32a, pumping pipe 32b, jet pump 32c, discharge pipe

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 基板(12)を処理する処理液(11)を入れる
容器(21)と、前記基板(12)の裏面を保持して前記処理液
(11)の中に浸漬する基板保持手段(31)とを含んでなる半
導体製造装置において、 前記基板保持手段(31)は、前記処理液(11)の中で前記基
板(12)を水平面に対して傾斜させた状態で保持すること
を特徴とする半導体製造装置。
1. A container (21) for containing a treatment liquid (11) for treating a substrate (12) and the treatment liquid holding the back surface of the substrate (12).
In a semiconductor manufacturing apparatus comprising a substrate holding means (31) immersed in (11), the substrate holding means (31), the substrate (12) in the treatment liquid (11) in a horizontal plane. A semiconductor manufacturing apparatus, which is held in a tilted state.
【請求項2】 請求項1記載の半導体製造装置に、前記
容器(21)内の前記処理液(11)を攪拌する攪拌手段(32)を
付設して構成したことを特徴とする半導体製造装置。
2. The semiconductor manufacturing apparatus according to claim 1, further comprising stirring means (32) for stirring the processing liquid (11) in the container (21). .
JP24750292A 1992-09-17 1992-09-17 Semiconductor manufacturing equipment Withdrawn JPH0697145A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24750292A JPH0697145A (en) 1992-09-17 1992-09-17 Semiconductor manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24750292A JPH0697145A (en) 1992-09-17 1992-09-17 Semiconductor manufacturing equipment

Publications (1)

Publication Number Publication Date
JPH0697145A true JPH0697145A (en) 1994-04-08

Family

ID=17164429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24750292A Withdrawn JPH0697145A (en) 1992-09-17 1992-09-17 Semiconductor manufacturing equipment

Country Status (1)

Country Link
JP (1) JPH0697145A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002184685A (en) * 2000-12-19 2002-06-28 Risotetsuku Japan Kk Development method
US7581551B2 (en) * 2004-09-01 2009-09-01 Sanyo Electric Co., Ltd. Cleaning apparatus
JP2010278094A (en) * 2009-05-27 2010-12-09 Tokyo Electron Ltd Development processing equipment
CN104275333A (en) * 2014-10-28 2015-01-14 芜湖东正汽车工业有限公司 Workpiece dust-removing device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002184685A (en) * 2000-12-19 2002-06-28 Risotetsuku Japan Kk Development method
US7581551B2 (en) * 2004-09-01 2009-09-01 Sanyo Electric Co., Ltd. Cleaning apparatus
JP2010278094A (en) * 2009-05-27 2010-12-09 Tokyo Electron Ltd Development processing equipment
TWI384333B (en) * 2009-05-27 2013-02-01 Tokyo Electron Ltd Development processing device
CN104275333A (en) * 2014-10-28 2015-01-14 芜湖东正汽车工业有限公司 Workpiece dust-removing device

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Effective date: 19991130