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JPH07159807A - Active matrix liquid crystal display device - Google Patents

Active matrix liquid crystal display device

Info

Publication number
JPH07159807A
JPH07159807A JP30498593A JP30498593A JPH07159807A JP H07159807 A JPH07159807 A JP H07159807A JP 30498593 A JP30498593 A JP 30498593A JP 30498593 A JP30498593 A JP 30498593A JP H07159807 A JPH07159807 A JP H07159807A
Authority
JP
Japan
Prior art keywords
liquid crystal
film
electrode
crystal display
electric field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30498593A
Other languages
Japanese (ja)
Inventor
Masaru Takahata
勝 高畠
Toru Sasaki
亨 佐々木
Katsumi Kondo
克己 近藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP30498593A priority Critical patent/JPH07159807A/en
Publication of JPH07159807A publication Critical patent/JPH07159807A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To obtain a film structure to efficiently apply an electric field on a liquid crystal layer in a liquid crystal display device of a transverse electric field system by using tantalum oxide (Ta2O5) having high relative dielectric const. as a protective film of a pixel electrode. CONSTITUTION:The pixel part consists of a glass substrate 1 in a TFT side, scanning electrode (Cr) 2, gate insulating film (silicon nitride film) 3, semiconductor film (amorphous silicon film) 4, signal electrode (Cr) 5, pixel electrode (Cr) 6, protective film 7 for the pixel electrode, lower oriented film 8, liquid crystal layer 9, upper oriented film 10, counter electrode (Cr) 11, and counter glass substrate 12. In this film structure, tantalum oxide (Ta2O5) having rather high relative dielectric const. is used for the protective layer 7 of the pixel electrode. Since tantalum oxide has high relative dielectric const. as 23 to 27, reduction of voltage in the tantalum oxide film is decreased, and thereby, an electric field can be efficiently applied on the liquid crystal layer. As a result, the response speed is improved and the display quality of the liquid crystal display is improved.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、低コストで高画質のア
クティブマトリクス型液晶表示装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low cost and high image quality active matrix type liquid crystal display device.

【0002】[0002]

【従来の技術】従来のアクティブマトリクス型液晶表示
装置では、液晶組成物層を駆動する電極として二枚の基
板界面上に形成し相対向させた透明電極を用いていた。
これは、液晶組成物層に印加する電界の方向を基板界面
にほぼ垂直な方向とすることで動作する、ツイステッド
ネマチック(TN)表示方式に代表される表示方式を用
いている理由によるものである。以下、液晶組成物層に
印加する主たる電界方向が基板界面にほぼ垂直な方向で
ある表示方式を縦電界方式と称する。
2. Description of the Related Art In a conventional active matrix type liquid crystal display device, transparent electrodes, which are formed on the interface between two substrates and face each other, are used as electrodes for driving a liquid crystal composition layer.
This is because a display system represented by a twisted nematic (TN) display system, which operates by making the direction of the electric field applied to the liquid crystal composition layer substantially perpendicular to the substrate interface, is used. . Hereinafter, a display system in which the main electric field direction applied to the liquid crystal composition layer is a direction substantially perpendicular to the substrate interface will be referred to as a vertical electric field system.

【0003】また、一方の基板上に形成した櫛歯状電極
対を用いて液晶組成物層に電界を印加する方式が、例え
ば、特公昭63−21907 号公報により提案されている。こ
こで言う櫛歯状電極対は、図5中の32,33で示すよ
うな櫛の歯のような形状を有する二つの電極を互いの歯
の部分が重ならずに噛み合うように配置したものであ
る。この場合、液晶組成物層を駆動する電極は透明であ
る必要はなく、不透明な金属電極を用いることができ
る。以下、液晶組成物層に印加する主たる電界方向が基
板界面にほぼ平行な方向である表示方式を横電界方式と
称する。ここで、横電界方式は縦電界方式と比べて視角
が拡大されるので、高画質が得られる。これは、横電界
方式では液晶分子の長軸は基板と常にほぼ平行であり、
立ち上がることがなく、従って視角方向を変えた時の明
るさの変化が小さい理由による。
Further, a method of applying an electric field to a liquid crystal composition layer using a comb-teeth-shaped electrode pair formed on one substrate has been proposed, for example, in Japanese Patent Publication No. 63-21907. The comb-teeth-shaped electrode pair referred to here is one in which two electrodes having the shape of comb teeth as shown by 32 and 33 in FIG. 5 are arranged so that their teeth do not overlap and mesh with each other. Is. In this case, the electrode that drives the liquid crystal composition layer does not need to be transparent, and an opaque metal electrode can be used. Hereinafter, a display system in which the main electric field direction applied to the liquid crystal composition layer is substantially parallel to the substrate interface is referred to as a lateral electric field system. Here, the horizontal electric field method has a wider viewing angle than the vertical electric field method, and thus high image quality can be obtained. This is because in the horizontal electric field system, the long axis of the liquid crystal molecule is almost parallel to the substrate,
This is because it does not stand up, and therefore the change in brightness is small when the viewing angle direction is changed.

【0004】[0004]

【発明が解決しようとする課題】上記横電界方式では、
10″クラスの液晶ディスプレイを考慮した場合、画素
電極と対向電極との距離が数十μmにもなるため、液晶
層に効率よく電界を印加することが重要であるが、従来
技術では、この点に考慮されていなかった。通常、画素
電極/対向電極間に印加される電圧VSBは、画素電極の
保護膜,配向膜間で電圧降下が生じるため、液晶層に印
加される電圧はVSBよりも低くなる。特に、従来、画素
電極の保護膜として用いられている窒化シリコン膜は比
誘電率は6〜7と低いため、窒化シリコン膜間で生じる
電圧降下は大きくなる。本発明の目的は横電界方式の液
晶表示装置で、液晶層に効率よく電界を印加するための
膜構成を提供することにある。なお、これまで主に用い
られている縦電界方式の液晶表示装置では、画素電極と
対向電極との距離が10μm以下なので、前述の問題点
は無視できる。
In the above-mentioned lateral electric field system,
Considering a liquid crystal display of the 10 ″ class, the distance between the pixel electrode and the counter electrode is several tens of μm, so it is important to efficiently apply an electric field to the liquid crystal layer. Normally, the voltage V SB applied between the pixel electrode and the counter electrode causes a voltage drop between the protective film and the alignment film of the pixel electrode, so that the voltage applied to the liquid crystal layer is V SB. Particularly, since the silicon nitride film conventionally used as a protective film for a pixel electrode has a low relative dielectric constant of 6 to 7, a voltage drop generated between the silicon nitride films becomes large. Is to provide a film structure for efficiently applying an electric field to a liquid crystal layer in a horizontal electric field type liquid crystal display device. Distance between electrode and counter electrode Since 10μm a following, the problem described above can be ignored.

【0005】[0005]

【課題を解決するための手段】上記目的を達成するた
め、本発明は少なくとも一方が透明な一対の基板と、前
記基板間に挟持された液晶組成物層と、前記基板のいず
れか一方の基板の向き合った表面にマトリクス状に配置
された複数の走査配線および信号配線と、対をなす画素
電極と、前記画素電極,前記走査配線および前記信号配
線に接続されたアクティブ素子と、前記各走査配線に接
続された走査配線駆動手段と、前記各信号配線に接続さ
れた信号配線駆動手段とを備えた液晶表示装置で、前記
対をなす画素電極が短冊状の形状であり、その一方の電
極の長辺方向が他方の電極の長辺方向とほぼ平行であっ
て、外部モジュールとの接続端子部以外の前記走査配線
および前記信号配線,前記画素電極,アクティブ素子は
タンタルオキサイド(Ta25)で覆われている。
In order to achieve the above object, the present invention provides a pair of substrates, at least one of which is transparent, a liquid crystal composition layer sandwiched between the substrates, and one of the substrates. A plurality of scanning wirings and signal wirings arranged in a matrix on the surfaces facing each other, a pair of pixel electrodes, active elements connected to the pixel electrodes, the scanning wirings and the signal wirings, and the scanning wirings. In a liquid crystal display device including a scanning wiring driving unit connected to the signal wiring driving unit and a signal wiring driving unit connected to each of the signal wirings, the pair of pixel electrodes has a strip shape, and one of the electrodes The long side direction is substantially parallel to the long side direction of the other electrode, and the scanning line and the signal line other than the connection terminal portion with the external module, the pixel electrode, and the active element are made of tantalum oxide. Are covered with Ta 2 O 5).

【0006】[0006]

【作用】上記膜構成では、画素電極の保護膜にタンタル
オキサイド(Ta25)を用いている。ここで、タンタ
ルオキサイドの比誘電率は23〜27と高いため、タン
タルオキサイド膜間で生じる電圧降下は小さくなる。し
たがって、液晶層に効率よく電界を印加することが可能
になる。本発明では画素電極の保護膜にタンタルオキサ
イド(Ta25)を用いるため、液晶層に効率よく電界
を印加することができ、その結果、応答速度が改善され
るので液晶ディスプレイの表示品質が向上する。
In the above film structure, tantalum oxide (Ta 2 O 5 ) is used for the protective film of the pixel electrode. Here, since the relative permittivity of tantalum oxide is as high as 23 to 27, the voltage drop generated between the tantalum oxide films is small. Therefore, it becomes possible to efficiently apply an electric field to the liquid crystal layer. In the present invention, since tantalum oxide (Ta 2 O 5 ) is used for the protective film of the pixel electrode, an electric field can be efficiently applied to the liquid crystal layer, and as a result, the response speed is improved and the display quality of the liquid crystal display is improved. improves.

【0007】[0007]

【実施例】図1は本発明を用いた場合の画素部の断面構
造の実施例である。図中で、1はTFT側ガラス基板、
2はCr(走査電極)、3は窒化シリコン膜(ゲート絶
縁膜)、4は非晶質シリコン膜(半導体膜)、5はCr
(信号電極)、6はCr(画素電極)、7はTa2
5(画素電極の保護膜)、8は下部の配向膜、9は液晶
層、10は上部の配向膜、11はCr(対向電極)、1
2は対向ガラス基板、13は液晶に印加される電界の向
きを示したものである。ここで、画素電極6,対向電極
11間の電気的等価回路は図2に示すように、画素電極
の保護膜の容量21/下部配向膜の容量22/液晶容量
23/上部配向膜の容量24の直列容量になる。本発明
の膜構成では、画素電極の保護膜に比較的比誘電率の高
いTa2O5を用いている。ここで、タンタルオキサイドの
比誘電率は23〜27と高いため、タンタルオキサイド
膜間で生じる電圧降下は小さくなる。したがって、液晶
層に効率よく電界を印加することが可能になる。その結
果、応答速度が改善されるので液晶ディスプレイの表示
品質が向上する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows an embodiment of a sectional structure of a pixel portion when the present invention is used. In the figure, 1 is a glass substrate on the TFT side,
2 is Cr (scan electrode), 3 is a silicon nitride film (gate insulating film), 4 is an amorphous silicon film (semiconductor film), 5 is Cr
(Signal electrode), 6 Cr (pixel electrode), 7 Ta 2 O
5 (protective film for pixel electrode), 8 lower alignment film, 9 liquid crystal layer, 10 upper alignment film, 11 Cr (counter electrode), 1
Reference numeral 2 is a counter glass substrate, and 13 is a direction of an electric field applied to the liquid crystal. Here, an electrical equivalent circuit between the pixel electrode 6 and the counter electrode 11 is, as shown in FIG. 2, a capacitor 21 of a protective film of the pixel electrode / a capacitor 22 of a lower alignment film / a liquid crystal capacitor 23 / a capacitor 24 of an upper alignment film. It becomes the series capacity of. In the film structure of the present invention, Ta 2 O 5 having a relatively high dielectric constant is used for the protective film of the pixel electrode. Here, since the relative permittivity of tantalum oxide is as high as 23 to 27, the voltage drop generated between the tantalum oxide films is small. Therefore, it becomes possible to efficiently apply an electric field to the liquid crystal layer. As a result, the response speed is improved and the display quality of the liquid crystal display is improved.

【0008】図3は本発明を用いた場合の画素部の平面
パターンの実施例を示したものである。図中に示すよう
に、画素電極6/対向電極11間に備えられている液晶
層には、主に電界は基板界面にほぼ平行に印加される。
また、図中には記載していないが、画素部全面にはタン
タルオキサイドが走査配線および前記信号配線,画素電
極,アクティブ素子の保護膜として、堆積している。
FIG. 3 shows an embodiment of a plane pattern of a pixel portion when the present invention is used. As shown in the figure, an electric field is mainly applied to the liquid crystal layer provided between the pixel electrode 6 and the counter electrode 11 substantially in parallel to the substrate interface.
Although not shown in the figure, tantalum oxide is deposited on the entire surface of the pixel portion as a protective film for the scanning wiring, the signal wiring, the pixel electrode, and the active element.

【0009】図4は本発明を用いた場合の画素部の断面
構造の第二実施例を示したものである。本実施例はアク
ティブ素子として金属/絶縁膜/金属から構成される薄
膜ダイオードを用いた場合の実施例である。本実施例で
も、図中に示すように、タンタルオキサイド7を画素電
極の保護膜として用いている。したがって、前述の理由
により液晶層に効率よく電界を印加することが可能にな
る。その結果、応答速度が改善されるので液晶ディスプ
レイの表示品質が向上する。
FIG. 4 shows a second embodiment of the sectional structure of the pixel portion when the present invention is used. This embodiment is an embodiment in which a thin film diode composed of metal / insulating film / metal is used as an active element. Also in this embodiment, as shown in the figure, tantalum oxide 7 is used as a protective film for the pixel electrode. Therefore, it is possible to efficiently apply an electric field to the liquid crystal layer for the reasons described above. As a result, the response speed is improved and the display quality of the liquid crystal display is improved.

【0010】[0010]

【発明の効果】本発明によれば、横電界方式の液晶表示
装置で、画素電極の保護膜に高い比誘電率を有するタン
タルオキサイド(Ta25)を用いる。このことによ
り、画素電極の保護膜での電圧降下は小さくなるので、
液晶層に効率よく電界を印加することができ、その結
果、液晶ディスプレイの表示品質が向上する。
According to the present invention, in a horizontal electric field type liquid crystal display device, tantalum oxide (Ta 2 O 5 ) having a high relative dielectric constant is used for a protective film of a pixel electrode. This reduces the voltage drop in the protective film of the pixel electrode,
An electric field can be efficiently applied to the liquid crystal layer, and as a result, the display quality of the liquid crystal display is improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の画素部の断面図。FIG. 1 is a cross-sectional view of a pixel portion of the present invention.

【図2】画素電極,対向電極間の等価回路図。FIG. 2 is an equivalent circuit diagram between a pixel electrode and a counter electrode.

【図3】本発明の画素部の平面パターンの説明図。FIG. 3 is an explanatory diagram of a plane pattern of a pixel portion of the present invention.

【図4】本発明の画素部の第二実施例の断面図。FIG. 4 is a sectional view of a second embodiment of the pixel portion of the present invention.

【図5】従来の画素の説明図。FIG. 5 is an explanatory diagram of a conventional pixel.

【符号の説明】[Explanation of symbols]

1…TFT側ガラス基板、2…Cr(走査電極)、3…
窒化シリコン膜(ゲート絶縁膜)、4…非晶質シリコン
膜(半導体膜)、5…Cr(信号電極)、6…Cr(画
素電極)、7…Ta25(TFT保護膜)、8…配向
膜、9…液晶、10…配向膜、11…Cr(対向電
極)、12…対向ガラス基板、13…電界の向き。
1 ... TFT side glass substrate, 2 ... Cr (scan electrode), 3 ...
Silicon nitride film (gate insulating film), 4 ... Amorphous silicon film (semiconductor film), 5 ... Cr (signal electrode), 6 ... Cr (pixel electrode), 7 ... Ta 2 O 5 (TFT protective film), 8 ... Alignment film, 9 ... Liquid crystal, 10 ... Alignment film, 11 ... Cr (counter electrode), 12 ... Counter glass substrate, 13 ... Direction of electric field.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】少なくとも一方が透明な一対の基板と、前
記基板間に挟持された液晶組成物層と、前記基板のいず
れか一方の基板の向き合った表面にマトリクス状に配置
された複数の走査配線および信号配線と、対をなす画素
電極と、前記画素電極,前記走査配線および前記信号配
線に接続されたアクティブ素子と、前記各走査配線に接
続された走査配線駆動手段と、前記各信号配線に接続さ
れた信号配線駆動手段とを備えた液晶表示装置におい
て、 前記対をなす画素電極が短冊状の形状であり、その一方
の電極の長辺方向が他方の電極の長辺方向とほぼ平行で
あって、 外部モジュールとの接続端子部以外の前記走査配線およ
び前記信号配線,前記画素電極,前記アクティブ素子は
タンタルオキサイド(Ta25)で覆われていることを
特徴とするアクティブマトリクス型液晶表示装置。
1. A pair of substrates, at least one of which is transparent, a liquid crystal composition layer sandwiched between the substrates, and a plurality of scans arranged in a matrix on facing surfaces of one of the substrates. Wirings and signal wirings, paired pixel electrodes, active elements connected to the pixel electrodes, the scanning wirings and the signal wirings, scanning wiring driving means connected to the scanning wirings, and the signal wirings. In a liquid crystal display device including a signal wiring driving unit connected to the pair of pixel electrodes, the paired pixel electrodes have a strip shape, and the long side direction of one of the electrodes is substantially parallel to the long side direction of the other electrode. a is, especially in that the scanning wiring and the signal wiring other than the connection terminal portion with the external module, the pixel electrode, the active element is covered with tantalum oxide (Ta 2 O 5) Active matrix liquid crystal display device according to.
【請求項2】請求項1に記載の前記アクティブ素子が、
薄膜トランジスタ、あるいは金属/絶縁膜/金属で構成
されるダイオードであるアクティブマトリクス型液晶表
示装置。
2. The active element according to claim 1,
An active matrix liquid crystal display device which is a thin film transistor or a diode composed of metal / insulating film / metal.
JP30498593A 1993-12-06 1993-12-06 Active matrix liquid crystal display device Pending JPH07159807A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30498593A JPH07159807A (en) 1993-12-06 1993-12-06 Active matrix liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30498593A JPH07159807A (en) 1993-12-06 1993-12-06 Active matrix liquid crystal display device

Publications (1)

Publication Number Publication Date
JPH07159807A true JPH07159807A (en) 1995-06-23

Family

ID=17939688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30498593A Pending JPH07159807A (en) 1993-12-06 1993-12-06 Active matrix liquid crystal display device

Country Status (1)

Country Link
JP (1) JPH07159807A (en)

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