JPH07173633A - Method for forming silicon nitride film - Google Patents
Method for forming silicon nitride filmInfo
- Publication number
- JPH07173633A JPH07173633A JP32063593A JP32063593A JPH07173633A JP H07173633 A JPH07173633 A JP H07173633A JP 32063593 A JP32063593 A JP 32063593A JP 32063593 A JP32063593 A JP 32063593A JP H07173633 A JPH07173633 A JP H07173633A
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- Prior art keywords
- silicon nitride
- temperature
- substrate
- film
- nitride film
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
- C04B41/5062—Borides, Nitrides or Silicides
- C04B41/5066—Silicon nitride
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
(57)【要約】
【目的】ピンホールやウィークスポット等の欠陥がほと
んどない信頼性の高い窒化シリコン膜を得る。
【構成】プラズマＣＶＤ法による基板上への窒化シリコ
ン膜の形成において、基板温度が十分な絶縁耐圧をもつ
窒化シリコンの生成温度（２５０〜２７０℃）に達する
前に、基板温度１００〜１５０℃で窒化シリコン膜の成
膜を開始することにより、成膜初期には、基板上に絶縁
耐圧は低いがピンホールやウィークスポット等の欠陥が
ない低温生成窒化シリコン層を堆積させ、その後、速や
かに基板温度を前記生成温度に昇温させて、前記低温生
成窒化シリコン層の上に厚く高温生成窒化シリコン層を
堆積させる。
(57) [Summary] [Purpose] To obtain a highly reliable silicon nitride film with few defects such as pinholes and weak spots. [Structure] In forming a silicon nitride film on a substrate by a plasma CVD method, at a substrate temperature of 100 to 150 ° C. before the substrate temperature reaches a generation temperature (250 to 270 ° C.) of silicon nitride having a sufficient withstand voltage. By starting the formation of the silicon nitride film, a low-temperature generated silicon nitride layer having a low withstand voltage but no defects such as pinholes and weak spots is deposited on the substrate at the initial stage of the film formation, and then the substrate is promptly formed. The temperature is raised to the formation temperature to deposit a thick high temperature formed silicon nitride layer on the low temperature formed silicon nitride layer.
Description
【０００１】[0001]
【産業上の利用分野】本発明は窒化シリコン膜の形成方
法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a silicon nitride film.
【０００２】[0002]
【従来の技術】例えばガラス等からなる基板上に形成さ
れる薄膜トランジスタのゲート絶縁膜やオーバコート絶
縁膜等は、一般に窒化シリコン（Ｓi Ｎ）膜とされてお
り、この窒化シリコン膜は、プラズマＣＶＤ法によって
基板上に形成されている。2. Description of the Related Art For example, a gate insulating film or an overcoat insulating film of a thin film transistor formed on a substrate made of glass or the like is generally a silicon nitride (SiN) film, and the silicon nitride film is a plasma CVD film. It is formed on the substrate by the method.
【０００３】プラズマＣＶＤ法は、真空チャンバ内に装
入した基板を所定の成膜温度に加熱し、前記チャンバ内
にプロセスガス（原料ガスおよび希釈ガス）を導入し
て、ＲＦ放電により原料ガスおよび希釈ガスをプラズマ
状態にして前記基板上に堆積させる方法であり、窒化シ
リコン膜は、Ｓi Ｈ4 （シラン）を主原料ガス、ＮＨ３
（アンモニア）を副原料ガスとし、Ｎ２ （窒素）を希
釈ガスとして形成されている。In the plasma CVD method, a substrate loaded in a vacuum chamber is heated to a predetermined film forming temperature, a process gas (a raw material gas and a diluent gas) is introduced into the chamber, and the raw material gas and This is a method of depositing a diluting gas in a plasma state on the substrate, and for the silicon nitride film, Si H 4 (silane) is used as a main raw material gas and NH 3
(Ammonia) is used as an auxiliary source gas, and N 2 (nitrogen) is used as a diluent gas.
【０００４】ところで、上記プラズマＣＶＤ法による窒
化シリコン膜の形成において基板上に堆積生成する窒化
シリコンの絶縁耐圧は、主にその生成温度によって決ま
り、高温で生成させた窒化シリコンほど高い絶縁耐圧を
もっている。この窒化シリコンの生成温度は２５０〜２
７０℃が適当とされており、この温度で生成させた窒化
シリコンは十分な絶縁耐圧をもっている。By the way, the withstand voltage of silicon nitride deposited and formed on a substrate in the formation of a silicon nitride film by the plasma CVD method is mainly determined by the temperature at which it is produced, and the higher the withstand voltage of silicon nitride produced at a higher temperature. . The production temperature of this silicon nitride is 250 to 2
70 ° C. is considered appropriate, and silicon nitride produced at this temperature has a sufficient withstand voltage.
【０００５】そこで、従来は、真空チャンバ内に装入し
た基板をヒータによって２５０〜２７０℃に加熱し、そ
の後にチャンバ内にプロセスガスを導入して、上述した
窒化シリコン膜の成膜を行なっている。Therefore, conventionally, a substrate loaded in a vacuum chamber is heated to 250 to 270 ° C. by a heater, and then a process gas is introduced into the chamber to form the above-mentioned silicon nitride film. There is.
【０００６】[0006]
【発明が解決しようとする課題】しかし、上記従来の方
法で成膜された窒化シリコン膜は、その物質（窒化シリ
コン）自体の絶縁耐圧は十分であるが、膜中にピンホー
ルやウィークスポット等の欠陥が散在状態で存在してお
り、したがって、前記欠陥部分の絶縁耐圧が低くて、絶
縁膜としての信頼性に欠けるという問題をもっていた。However, the silicon nitride film formed by the above-mentioned conventional method has a sufficient withstand voltage of the substance (silicon nitride) itself, but pinholes, weak spots, etc. are present in the film. However, there is a problem in that the dielectric strength of the defective portion is low and the reliability of the insulating film is poor.
【０００７】本発明は、ピンホールやウィークスポット
等の欠陥がほとんどない信頼性の高い窒化シリコン膜を
得ることができる窒化シリコン膜の形成方法を提供する
ことを目的としたものである。An object of the present invention is to provide a method for forming a silicon nitride film, which is capable of obtaining a highly reliable silicon nitride film having few defects such as pinholes and weak spots.
【０００８】[0008]
【課題を解決するための手段】本発明は、プラズマＣＶ
Ｄ法による基板上へのシリコン窒化膜の形成において、
基板温度が十分な絶縁耐圧をもつ窒化シリコンの生成温
度に達する前に前記窒化シリコン膜の成膜を開始し、そ
の後、基板温度を前記生成温度に昇温させることを特徴
とするものである。The present invention is a plasma CV.
In forming the silicon nitride film on the substrate by the D method,
It is characterized in that the film formation of the silicon nitride film is started before the substrate temperature reaches the generation temperature of silicon nitride having a sufficient withstand voltage, and then the substrate temperature is raised to the generation temperature.
【０００９】本発明において、十分な絶縁耐圧の窒化シ
リコンが生成する基板温度は２５０〜２７０℃であり、
成膜開始時の基板温度は１００〜１５０℃が望ましい。
また、基板温度１００〜１５０℃での成膜時間は数秒で
十分である。In the present invention, the substrate temperature at which silicon nitride having a sufficient withstand voltage is generated is 250 to 270 ° C.
The substrate temperature at the start of film formation is preferably 100 to 150 ° C.
A few seconds is sufficient for the film formation time at a substrate temperature of 100 to 150 ° C.
【００１０】[0010]
【作用】すなわち、本発明は、基板温度が低いうちに窒
化シリコン膜の成膜を開始することにより、窒化シリコ
ン膜の成膜初期は低温で窒化シリコンを生成させ、その
後、速やかに基板温度を十分な絶縁耐圧をもつ窒化シリ
コンの生成温度に昇温させて、高温で窒化シリコンを生
成させるものである。In other words, according to the present invention, by starting the film formation of the silicon nitride film while the substrate temperature is low, silicon nitride is generated at a low temperature in the initial stage of the film formation of the silicon nitride film, and then the substrate temperature is rapidly increased. The temperature is raised to the generation temperature of silicon nitride having a sufficient withstand voltage, and silicon nitride is generated at a high temperature.
【００１１】このように、窒化シリコン膜の成膜初期に
低温で窒化シリコンを生成させると、成膜初期には基板
上に絶縁耐圧の低い窒化シリコンが堆積するが、この低
温で生成された窒化シリコンの層にはピンホールやウィ
ークスポット等の欠陥がないため、その上に堆積する高
温で生成された窒化シリコンの層にもピンホールやウィ
ークスポット等の欠陥がほとんど生じない。When silicon nitride is generated at a low temperature in the initial stage of film formation of the silicon nitride film, silicon nitride having a low withstand voltage is deposited on the substrate at the initial stage of film formation. Since the silicon layer has no defects such as pinholes and weak spots, the silicon nitride layer deposited thereon at a high temperature has few defects such as pinholes and weak spots.
【００１２】そして、本発明では、成膜初期にのみ低温
で窒化シリコンを生成させ、その後は速やかに基板温度
を十分な絶縁耐圧をもつ窒化シリコンの生成温度に昇温
させているため、基板上に成膜された窒化シリコン膜
は、極く薄い低温生成層の上に厚く高温生成層が堆積し
た膜であり、この窒化シリコン膜の絶縁耐圧は十分であ
る。したがって、本発明によれば、ピンホールやウィー
クスポット等の欠陥がほとんどない信頼性の高い窒化シ
リコン膜を得ることができる。In the present invention, silicon nitride is generated at a low temperature only at the initial stage of film formation, and thereafter the substrate temperature is quickly raised to the generation temperature of silicon nitride having a sufficient withstand voltage. The silicon nitride film formed in (1) is a film in which a thick high temperature generation layer is deposited on an extremely thin low temperature generation layer, and the withstand voltage of this silicon nitride film is sufficient. Therefore, according to the present invention, it is possible to obtain a highly reliable silicon nitride film having few defects such as pinholes and weak spots.
【００１３】[0013]
【実施例】以下、本発明の実施例を図面を参照して説明
する。図１は本発明の第１の実施例による基板温度と窒
化シリコン膜の成膜時期との関係を示す図である。この
実施例では、真空チャンバ内に装入した基板をまずヒー
タにより加熱し、基板温度が１００℃まで昇温したとこ
ろで、前記チャンバ内にプロセスガス（Ｓi Ｈ4 ，ＮＨ
3 ，Ｎ2 ）を導入し、ほぼ同時にＲＦ放電を開始して、
基板上への窒化シリコン膜の成膜を開始する。なお、Ｒ
Ｆ放電の放電パワー密度は６０〜１２０ｍＷ／ｃｍ2 に
制御する。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing the relationship between the substrate temperature and the film formation timing of a silicon nitride film according to the first embodiment of the present invention. In this embodiment, a substrate loaded in a vacuum chamber is first heated by a heater, and when the substrate temperature rises to 100 ° C., a process gas (Si H 4 , NH 3 ) is introduced into the chamber.
3 , N 2 ) was introduced, RF discharge was started almost at the same time,
The formation of the silicon nitride film on the substrate is started. In addition, R
The discharge power density of F discharge is controlled to 60 to 120 mW / cm 2 .
【００１４】このように、基板温度が１００℃程度の比
較的低い温度であるうちに窒化シリコン膜の成膜を開始
すると、成膜初期には基板上に、物質自体の絶縁耐圧は
低いがピンホールやウィークスポット等の欠陥のない窒
化シリコン層が堆積する。As described above, when the film formation of the silicon nitride film is started while the substrate temperature is a relatively low temperature of about 100.degree. A silicon nitride layer is deposited that is free of defects such as holes and weak spots.
【００１５】また、基板温度は成膜開始後も昇温して行
くが、基板温度が１５０℃を越えるまでは、上記と同様
な欠陥のない窒化シリコン層が堆積する。この１００〜
１５０℃の低温で窒化シリコンを生成させる低温成膜
は、ほんの数秒（３〜６秒程度）だけ行ない、その後
は、基板温度を速やかに、十分な絶縁耐圧をもつ窒化シ
リコンの生成温度（以下、高温成膜温度という）に昇温
させる。この高温成膜温度は、２５０〜２７０℃であ
る。Although the substrate temperature rises even after the film formation is started, the same defect-free silicon nitride layer as above is deposited until the substrate temperature exceeds 150.degree. This 100 ~
The low-temperature film formation for generating silicon nitride at a low temperature of 150 ° C. is performed for only a few seconds (about 3 to 6 seconds), and thereafter, the substrate temperature is rapidly increased to the generation temperature of silicon nitride having a sufficient withstand voltage (hereinafter, referred to as (High temperature film forming temperature). This high temperature film forming temperature is 250 to 270 ° C.
【００１６】この場合、ヒータによる加熱では基板温度
を急激に昇温させるのは難しいため、この実施例では、
上記プロセスガスを前記高温成膜温度に加熱してチャン
バ内に導入するとともに、チャンバ内のガス圧を速やか
に所定の圧力まで上昇させることにより、プロセスガス
の熱によって基板温度を昇温させている。In this case, since it is difficult to rapidly raise the substrate temperature by heating with the heater, in this embodiment,
The substrate temperature is raised by the heat of the process gas by heating the process gas to the high temperature film forming temperature and introducing the same into the chamber, and rapidly raising the gas pressure in the chamber to a predetermined pressure. .
【００１７】このように、加熱したプロセスガスをチャ
ンバ内に導入してそのガス圧を上げて行くと、ガス圧の
上昇にともなってプロセスガスから基板への熱伝導率が
高くなるため、ガス圧を速やかに上昇させてやれば、基
板温度を急激に昇温させることができる。なお、このと
きは、ヒータによる基板の加熱を停止してもよいし、ま
たヒータによる加熱をそのまま続行し、ヒータとプロセ
スガスの熱とで基板を昇温させてもよい。As described above, when the heated process gas is introduced into the chamber and the gas pressure is increased, the thermal conductivity from the process gas to the substrate increases as the gas pressure rises. If the temperature is raised rapidly, the substrate temperature can be rapidly raised. At this time, the heating of the substrate by the heater may be stopped, or the heating by the heater may be continued as it is and the temperature of the substrate may be raised by the heat of the heater and the heat of the process gas.
【００１８】ただし、この実施例では、基板温度が１０
０℃になったときにプロセスガスを導入して窒化シリコ
ン膜の成膜を開始しているため、プロセスガスの熱によ
って基板温度を昇温させると、基板温度が成膜開始時
（プロセスガスの導入開始時）から急激に昇温するが、
プロセスガスの導入流量を調整してガス圧の上昇速度を
制御すれば、１００〜１５０℃の低温で窒化シリコンを
生成させる低温成膜時間ｔ（ｔ＝数秒）を確保すること
ができる。However, in this embodiment, the substrate temperature is 10
When the temperature reaches 0 ° C., the process gas is introduced to start the film formation of the silicon nitride film. Therefore, when the substrate temperature is raised by the heat of the process gas, the substrate temperature is increased at the start of film formation (process gas Temperature rises sharply from the beginning of introduction),
By adjusting the introduction flow rate of the process gas and controlling the rising rate of the gas pressure, the low temperature film formation time t (t = several seconds) for producing silicon nitride at a low temperature of 100 to 150 ° C. can be secured.
【００１９】そして、上記低温成膜を行なった後、速や
かに基板温度を２５０〜２７０℃の高温成膜温度（図で
は２５０℃）に昇温させると、成膜初期に基板上に堆積
した低温生成層の上に、高温で生成された十分な絶縁耐
圧をもつ窒化シリコンが堆積する。After the low temperature film formation, the substrate temperature is quickly raised to a high temperature film formation temperature of 250 to 270 ° C. (250 ° C. in the figure), and the low temperature deposited on the substrate at the initial stage of film formation. Silicon nitride having a sufficient withstand voltage generated at high temperature is deposited on the generation layer.
【００２０】この高温成膜は、基板温度（２５０〜２７
０℃）を一定に制御しながら、高温で生成された窒化シ
リコン層が所望の厚さに堆積するまで継続し、その後Ｒ
Ｆ放電を停止して、窒化シリコン膜の成膜を終了する。This high temperature film formation is performed at a substrate temperature (250 to 27).
(0 ° C.) is kept constant until the silicon nitride layer formed at high temperature is deposited to a desired thickness, then R
The F discharge is stopped and the film formation of the silicon nitride film is completed.
【００２１】すなわち、上記窒化シリコン膜の形成方法
は、基板温度が１００〜１５０℃の比較的低い温度であ
るうちに窒化シリコン膜の成膜を開始することにより、
窒化シリコン膜の成膜初期は低温で窒化シリコンを生成
させ、その後、速やかに基板温度を十分な絶縁耐圧をも
つ窒化シリコンの生成温度（２５０〜２７０℃）に昇温
させて、高温で窒化シリコンを生成させるものである。That is, in the method for forming a silicon nitride film, the film formation of the silicon nitride film is started while the substrate temperature is a relatively low temperature of 100 to 150 ° C.
In the initial stage of forming the silicon nitride film, silicon nitride is generated at a low temperature, and then the substrate temperature is quickly raised to a generation temperature (250 to 270 ° C.) of silicon nitride having a sufficient withstand voltage, and the silicon nitride is heated at a high temperature. Is generated.
【００２２】このように、窒化シリコン膜の成膜初期に
１００〜１５０℃の低温で窒化シリコンを生成させる
と、成膜初期には基板上に絶縁耐圧の低い窒化シリコン
が堆積するが、この低温で生成された窒化シリコン層に
はピンホールやウィークスポット等の欠陥がないため、
その上に堆積する高温で生成された窒化シリコンの層に
もピンホールやウィークスポット等の欠陥はほとんど生
じない。As described above, when silicon nitride is generated at a low temperature of 100 to 150 ° C. in the initial stage of forming a silicon nitride film, silicon nitride having a low dielectric strength is deposited on the substrate in the initial stage of film formation. Since there are no defects such as pinholes and weak spots in the silicon nitride layer generated in
Almost no defects such as pinholes and weak spots occur in the high-temperature silicon nitride layer deposited thereon.
【００２３】なお、低温成膜時間ｔは数秒（３〜６秒）
であるため、低温で生成された窒化シリコン層の厚さは
極く薄いが、成膜初期に基板上に堆積した層に欠陥がな
ければ、その上に堆積する高温生成層にも欠陥はほとん
ど発生しない。The low temperature film forming time t is several seconds (3 to 6 seconds).
Therefore, the thickness of the silicon nitride layer generated at low temperature is extremely thin, but if there is no defect in the layer deposited on the substrate at the initial stage of film formation, most of the high temperature generated layer deposited on it has almost no defects. Does not occur.
【００２４】そして、この方法では、成膜初期にのみ低
温で窒化シリコンを生成させ、その後は速やかに基板温
度を十分な絶縁耐圧をもつ窒化シリコンの生成温度に昇
温させているため、基板上に成膜された窒化シリコン膜
は、極く薄い低温生成層の上に厚く高温生成層が堆積し
た膜であり、この窒化シリコン膜の絶縁耐圧は十分であ
る。In this method, silicon nitride is generated at a low temperature only at the initial stage of film formation, and thereafter the substrate temperature is quickly raised to the generation temperature of silicon nitride having a sufficient withstand voltage. The silicon nitride film formed in (1) is a film in which a thick high temperature generation layer is deposited on an extremely thin low temperature generation layer, and the withstand voltage of this silicon nitride film is sufficient.
【００２５】したがって、上記窒化シリコン膜の形成方
法によれば、ピンホールやウィークスポット等の欠陥が
ほとんどない信頼性の高い窒化シリコン膜を得ることが
できる。Therefore, according to the method for forming a silicon nitride film described above, a highly reliable silicon nitride film having few defects such as pinholes and weak spots can be obtained.
【００２６】また、上記方法では、基板温度１００〜１
５０℃での低温成膜時間ｔを数秒（３〜６秒）としてい
るため、窒化シリコン膜の形成に要する成膜時間（低温
生成層と高温生成層の両方の堆積時間）は、上記高温生
成層と同じ厚さの窒化シリコン膜を従来の方法で形成す
る場合に比べて数秒長くなるだけであり、したがって、
成膜能率の低下もほとんどない。In the above method, the substrate temperature is 100 to 1
Since the low temperature film formation time t at 50 ° C. is set to several seconds (3 to 6 seconds), the film formation time (deposition time for both the low temperature generation layer and the high temperature generation layer) required for forming the silicon nitride film is the same as the above high temperature generation. It is only a few seconds longer than when forming a silicon nitride film with the same thickness as the layer by the conventional method, and therefore,
Almost no decrease in film forming efficiency.
【００２７】なお、上記実施例では、基板温度が１００
℃になったときに成膜を開始し、その後基板温度を昇温
させながら、基板温度が１００℃から１５０℃に昇温す
る間に低温成膜を行なっているが、成膜開始時期は、基
板温度が１００〜１５０℃の範囲にある間であればどの
時期でもよく、また低温成膜は、基板温度を一定に保っ
ておいて行なってもよい。In the above embodiment, the substrate temperature is 100.
The film formation is started when the temperature reaches 0 ° C., and then the low temperature film formation is performed while the substrate temperature is increased from 100 ° C. to 150 ° C. while raising the substrate temperature. The substrate temperature may be any time as long as it is in the range of 100 to 150 ° C., and the low temperature film formation may be performed with the substrate temperature kept constant.
【００２８】図２は本発明の第２の実施例による基板温
度と窒化シリコン膜の成膜時期との関係を示す図であ
る。この実施例は、基板温度が１５０℃まで昇温したと
きに窒化シリコン膜の成膜を開始し、数秒の低温成膜時
間ｔだけ基板温度を１５０℃に保って低温成膜を行なっ
た後、速やかに基板温度を十分な絶縁耐圧をもつ窒化シ
リコンの生成温度（２５０〜２７０℃）昇温させて高温
成膜を行なうものであり、この実施例によっても、ピン
ホールやウィークスポット等の欠陥がほとんどない信頼
性の高い窒化シリコン膜を得ることができる。FIG. 2 is a diagram showing the relationship between the substrate temperature and the silicon nitride film formation timing according to the second embodiment of the present invention. In this example, when the substrate temperature was raised to 150 ° C., the silicon nitride film formation was started, and after the low temperature film formation time t of several seconds, the substrate temperature was kept at 150 ° C. High-temperature film formation is performed by rapidly raising the substrate temperature to the generation temperature (250 to 270 ° C.) of silicon nitride having a sufficient withstand voltage. Also in this embodiment, defects such as pinholes and weak spots are generated. It is possible to obtain a highly reliable silicon nitride film.
【００２９】[0029]
【発明の効果】本発明によれば、は、プラズマＣＶＤ法
による基板上への窒化シリコン膜の形成において、基板
温度が十分な絶縁耐圧をもつ窒化シリコンの生成温度に
達する前に窒化シリコン膜の成膜を開始し、その後、速
やかに基板温度を前記生成温度に昇温させることによ
り、成膜初期にのみ低温で窒化シリコンを生成させ、そ
の後は速やかに基板温度を十分な絶縁耐圧をもつ窒化シ
リコンの生成温度に昇温させているため、基板上に成膜
された窒化シリコン膜は、極く薄い低温生成層の上に厚
く高温生成層が堆積した膜であり、この窒化シリコン膜
の絶縁耐圧は十分である。したがって、本発明によれ
ば、ピンホールやウィークスポット等の欠陥がほとんど
ない信頼性の高い窒化シリコン膜を得ることができる。According to the present invention, in the formation of the silicon nitride film on the substrate by the plasma CVD method, the silicon nitride film of the silicon nitride film is formed before the substrate temperature reaches the generation temperature of silicon nitride having a sufficient withstand voltage. By starting the film formation and then quickly raising the substrate temperature to the generation temperature, silicon nitride is generated at a low temperature only at the initial stage of the film formation, and thereafter, the substrate temperature is rapidly raised to a nitriding temperature with a sufficient withstand voltage. Since the temperature is raised to the silicon generation temperature, the silicon nitride film formed on the substrate is a film in which a thick high temperature generation layer is deposited on an extremely thin low temperature generation layer. Withstand voltage is sufficient. Therefore, according to the present invention, it is possible to obtain a highly reliable silicon nitride film having few defects such as pinholes and weak spots.
【図１】本発明の第１の実施例による基板温度と窒化シ
リコン膜の成膜時期との関係を示す図。FIG. 1 is a diagram showing a relationship between a substrate temperature and a film formation timing of a silicon nitride film according to a first embodiment of the present invention.
【図２】本発明の第２の実施例による基板温度と窒化シ
リコン膜の成膜時期との関係を示す図。FIG. 2 is a diagram showing a relationship between a substrate temperature and a film formation timing of a silicon nitride film according to a second embodiment of the present invention.
ｔ…低温成膜時間 t ... Low temperature film formation time
Claims (3)
リコン膜の形成において、基板温度が十分な絶縁耐圧を
もつ窒化シリコンの生成温度に達する前に前記窒化シリ
コン膜の成膜を開始し、その後、基板温度を前記生成温
度に昇温させることを特徴とする窒化シリコン膜の形成
方法。1. In the formation of a silicon nitride film on a substrate by plasma CVD, the film formation of the silicon nitride film is started before the substrate temperature reaches a generation temperature of silicon nitride having a sufficient withstand voltage, and thereafter. A method for forming a silicon nitride film, which comprises raising the substrate temperature to the generation temperature.
する基板温度は２５０〜２７０℃であり、成膜開始時の
基板温度は１００〜１５０℃であることを特徴とする請
求項１に記載の窒化シリコン膜の形成方法。2. The substrate temperature generated by silicon nitride having a sufficient withstand voltage is 250 to 270 ° C., and the substrate temperature at the start of film formation is 100 to 150 ° C. Of forming a silicon nitride film of.
数秒であることを特徴とする請求項２に記載の窒化シリ
コン膜の形成方法。3. The method for forming a silicon nitride film according to claim 2, wherein the film formation time at a substrate temperature of 100 to 150 ° C. is several seconds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32063593A JPH07173633A (en) | 1993-12-20 | 1993-12-20 | Method for forming silicon nitride film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32063593A JPH07173633A (en) | 1993-12-20 | 1993-12-20 | Method for forming silicon nitride film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07173633A true JPH07173633A (en) | 1995-07-11 |
Family
ID=18123614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32063593A Pending JPH07173633A (en) | 1993-12-20 | 1993-12-20 | Method for forming silicon nitride film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07173633A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6391435B1 (en) | 1996-07-10 | 2002-05-21 | A & A Material Corporation | Reinforcing bamboo fiber, manufacturing method thereof, inorganic molded body using reinforcing bamboo fiber, and manufacturing method thereof |
-
1993
- 1993-12-20 JP JP32063593A patent/JPH07173633A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6391435B1 (en) | 1996-07-10 | 2002-05-21 | A & A Material Corporation | Reinforcing bamboo fiber, manufacturing method thereof, inorganic molded body using reinforcing bamboo fiber, and manufacturing method thereof |
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