JPH07247360A - Production of high-molecular-weight polysilane - Google Patents
Production of high-molecular-weight polysilaneInfo
- Publication number
- JPH07247360A JPH07247360A JP6802394A JP6802394A JPH07247360A JP H07247360 A JPH07247360 A JP H07247360A JP 6802394 A JP6802394 A JP 6802394A JP 6802394 A JP6802394 A JP 6802394A JP H07247360 A JPH07247360 A JP H07247360A
- Authority
- JP
- Japan
- Prior art keywords
- group
- metal complex
- complex
- poly
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920000548 poly(silane) polymer Polymers 0.000 title abstract description 17
- 238000004519 manufacturing process Methods 0.000 title description 3
- 150000004696 coordination complex Chemical class 0.000 abstract description 15
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 12
- 229910000077 silane Inorganic materials 0.000 abstract description 11
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 abstract description 10
- 125000002097 pentamethylcyclopentadienyl group Chemical group 0.000 abstract description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 abstract description 3
- 229910052719 titanium Inorganic materials 0.000 abstract description 3
- 239000010936 titanium Substances 0.000 abstract description 3
- 229910007264 Si2H6 Inorganic materials 0.000 abstract 2
- -1 flammable reagents Chemical class 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000002994 raw material Substances 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- 229910052779 Neodymium Inorganic materials 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 5
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 229910052772 Samarium Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052769 Ytterbium Inorganic materials 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 3
- 239000003446 ligand Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 3
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- DWXYSRPFPPFSMN-UHFFFAOYSA-N C[Si](C)(C)C([Si](C)(C)C)[Nd] Chemical compound C[Si](C)(C)C([Si](C)(C)C)[Nd] DWXYSRPFPPFSMN-UHFFFAOYSA-N 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 2
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 238000006068 polycondensation reaction Methods 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- 238000005160 1H NMR spectroscopy Methods 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052773 Promethium Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 238000006621 Wurtz reaction Methods 0.000 description 1
- 229910052768 actinide Inorganic materials 0.000 description 1
- 150000001255 actinides Chemical class 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 125000005103 alkyl silyl group Chemical group 0.000 description 1
- 125000004414 alkyl thio group Chemical group 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000005104 aryl silyl group Chemical group 0.000 description 1
- 125000005110 aryl thio group Chemical group 0.000 description 1
- 125000004104 aryloxy group Chemical group 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical class Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- UTUAUBOPWUPBCH-UHFFFAOYSA-N dimethylsilylidene(dimethyl)silane Chemical compound C[Si](C)=[Si](C)C UTUAUBOPWUPBCH-UHFFFAOYSA-N 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000012643 polycondensation polymerization Methods 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000001226 reprecipitation Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000005672 tetraenes Chemical class 0.000 description 1
- 150000005671 trienes Chemical class 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Silicon Polymers (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明はポリシラン類の製造法に
関する。ポリシラン類は、光導電体、フォトレジスト等
の光反応性材料、炭化ケイ素系セラミックス類の原料等
として、有用なものである。FIELD OF THE INVENTION The present invention relates to a method for producing polysilanes. Polysilanes are useful as photoconductors, photoreactive materials such as photoresists, and raw materials for silicon carbide ceramics.
【0002】[0002]
【従来の技術】ポリシラン類は、従来、主として以下の
反応を用いる方法によって製造されていた。 1)ジクロロシラン類のWurtz反応による重縮合反
応。 2)トリヒドロシラン類の、IVa 族金属錯体またはIIIa
族金属錯体存在下での脱水素重縮合反応。2. Description of the Related Art Polysilanes have hitherto been produced mainly by a method using the following reactions. 1) Polycondensation reaction of Wurtz reaction of dichlorosilanes. 2) Group IVa metal complexes or IIIa of trihydrosilanes
Dehydrogenative polycondensation reaction in the presence of group metal complexes.
【0003】しかし、これらの方法は、それぞれ下記の
問題点を有している。すなわち、前記1)の反応では、
湿気に敏感で、腐食性のハロシラン類を用いる上に、ア
ルカリ金属すなわち発火性の試薬を取り扱うため、危険
が伴い、また、官能基を有するものの合成には自ずと制
限がある。前記2)の脱水素重縮合重合では、反応条件
は穏和であるが、一般に、高分子量のポリシラン類を製
造しにくい。また、本発明者らは、ヒドロシラン類を原
料として、ランタノイド錯体の存在下の反応によりポリ
シラン類を得る方法を報告した(特開平5−32785
号公報)。しかしながら、この方法では、得られるポリ
シラン類の高分子量化に限界があった。However, each of these methods has the following problems. That is, in the reaction of 1) above,
In addition to the use of halosilanes, which are sensitive to moisture and corrosive, they also handle alkali metals, i.e. flammable reagents, which are dangerous and naturally limit the synthesis of functional groups. In the dehydrogenative polycondensation polymerization of 2), the reaction conditions are mild, but it is generally difficult to produce high molecular weight polysilanes. The present inventors also reported a method for obtaining polysilanes by reacting hydrosilanes as a raw material in the presence of a lanthanoid complex (JP-A-5-32785).
Issue). However, this method has a limit in increasing the molecular weight of the obtained polysilane.
【0004】[0004]
【発明が解決しようとする課題】本発明は、脱水素縮合
で得られるヒドロポリシラン類等の、比較的分子量の低
いポリシラン類を、さらに高分子量化するための方法を
提供することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a method for further increasing the molecular weight of polysilanes having a relatively low molecular weight such as hydropolysilanes obtained by dehydrogenative condensation. .
【0005】[0005]
【課題を解決するための手段】本発明者らは、上記問題
点を解決するべく鋭意検討を重ねた結果、IIIa族金属錯
体またはIVa 族金属錯体を用いて、ヒドロポリシラン類
とシランSiH4 またはジシランSi2 H6 を反応させ
ることにより、より高分子量のポリシラン類が得られる
ことを見い出した。本発明はこれらの知見に基づき完成
されるに至ったものである。Means for Solving the Problems As a result of intensive studies to solve the above-mentioned problems, the present inventors have made use of a Group IIIa metal complex or a Group IVa metal complex and hydropolysilanes and silane SiH 4 or It has been found that higher molecular weight polysilanes can be obtained by reacting disilane Si 2 H 6 . The present invention has been completed based on these findings.
【0006】すなわち本発明は、IIIa族金属錯体または
IVa 族金属錯体の存在下、ヒドロポリシラン類をシラン
SiH4 またはジシランSi2 H6 で処理することを特
徴とするポリシラン類の製造法を提供するものである。That is, the present invention provides a Group IIIa metal complex or
The present invention provides a method for producing polysilanes, which comprises treating hydropolysilanes with silane SiH 4 or disilane Si 2 H 6 in the presence of a Group IVa metal complex.
【0007】本発明において触媒として用いられるIIIa
族金属錯体の中心金属としては、スカンジウム、イット
リウム、ランタノイド元素(ランタン、セリウム、プラ
セオジム、ネオジム、プロメチウム、サマリウム、ユー
ロピウム、ガドリニウム、テルビウム、ジスプロシウ
ム、ホルミウム、エルビウム、ツリウム、イッテルビウ
ム、ルテチウム)、アクチノイド元素から選ばれた任意
のものを用いることができる。この内、好ましくはラン
タン、ネオジム、サマリウム、イッテルビウム、ルテチ
ウムが用いられ、特に好ましくはネオジムが用いられ
る。IIIa used as a catalyst in the present invention
The central metal of the group metal complex includes scandium, yttrium, lanthanoid elements (lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium) and actinide elements. Any selected one can be used. Of these, lanthanum, neodymium, samarium, ytterbium, and lutetium are preferably used, and neodymium is particularly preferably used.
【0008】本発明において触媒として用いられるIVa
族金属錯体の中心金属としては、チタン、ジルコニウ
ム、ハフニウム等を挙げることができる。IVa used as a catalyst in the present invention
Examples of the central metal of the group metal complex include titanium, zirconium, hafnium and the like.
【0009】本発明で触媒として用いられる前記金属錯
体の配位子としては、例えば、ハロゲン、水素、アルキ
ル、アラルキル、アリール、アルキルシリル、アリール
シリル、オレフィン、ジエン、トリエン、テトラエン、
シクロジエン、シクロトリエン、シクロテトラエン、ア
リル、アルコキシ、アリールオキシ、アルキルチオ、ア
リールチオ、シクロペンタジエニル、メチルシクロペン
タジエニル、ジメチルシクロペンタジエニル、ペンタメ
チルシクロペンタジエニル、アルキルアミン、アリール
アミン、ピリジル、アルキルホスフィン、アリールホス
フィン、アルキルアリールホスフィン、アルキルイソシ
アニド、アリールイソシアニド、エーテル等を用いるこ
とができる。これらの配位子は、さらに置換基を有して
いるものも包含する。この内、好ましい配位子としては
水素、アルキル[好ましくは炭素原子数1〜10のアル
キル基、例えばメチル、トリメチルシリルメチル、ビス
(トリメチルシリル)メチル、エチル、i−プロピル、
t−ブチル、ネオペンチル、ヘキシル]、シクロペンタ
ジエニル、ペンタメチルシクロペンタジエニル、テトラ
ヒドロフラン等を挙げることができる。Examples of the ligand of the metal complex used as a catalyst in the present invention include halogen, hydrogen, alkyl, aralkyl, aryl, alkylsilyl, arylsilyl, olefin, diene, triene and tetraene.
Cyclodiene, cyclotriene, cyclotetraene, allyl, alkoxy, aryloxy, alkylthio, arylthio, cyclopentadienyl, methylcyclopentadienyl, dimethylcyclopentadienyl, pentamethylcyclopentadienyl, alkylamine, arylamine, Pyridyl, alkylphosphine, arylphosphine, alkylarylphosphine, alkylisocyanide, arylisocyanide, ether and the like can be used. These ligands also include those having a substituent. Among these, preferred ligands are hydrogen, alkyl [preferably an alkyl group having 1 to 10 carbon atoms, for example, methyl, trimethylsilylmethyl, bis (trimethylsilyl) methyl, ethyl, i-propyl,
t-butyl, neopentyl, hexyl], cyclopentadienyl, pentamethylcyclopentadienyl, tetrahydrofuran and the like.
【0010】本発明で触媒として用いられる前記金属錯
体の構造としては下記一般式(I)、(II)または(II
I )で表わされる有機金属錯体およびその会合体が特に
好ましいが、これらに限定されるものではない。 Cp’2 MR (I) Cp’2 M’ (II) Cp’2 M”R2 (III ) (式中、Cp’はシクロペンタジエニル基またはその置
換体を表わし、Mは任意のIIIa族金属を表わし、M’は
サマリウム、ユーロピウム、イッテルビウムのうちのい
ずれかを表わし、M”はチタン、ジルコニウム、ハフニ
ウムを表わし、Rは水素、アルコキシ基、1価の有機基
または1価のシリル基を表わす。)The structure of the metal complex used as a catalyst in the present invention is represented by the following general formula (I), (II) or (II
The organometallic complex represented by I) and its associated product are particularly preferable, but not limited thereto. Cp ′ 2 MR (I) Cp ′ 2 M ′ (II) Cp ′ 2 M ″ R 2 (III) (In the formula, Cp ′ represents a cyclopentadienyl group or a substitution product thereof, and M is any IIIa group. Represents a metal, M ′ represents any one of samarium, europium and ytterbium, M ″ represents titanium, zirconium or hafnium, R represents hydrogen, an alkoxy group, a monovalent organic group or a monovalent silyl group. Represent)
【0011】上記一般式(I)においてRで表わされる
基のうち、好ましい基としては水素、メチル、トリメチ
ルシリルメチル、ビス(トリメチルシリル)メチル、ネ
オペンチル、フェニル、ベンジル等が挙げられる。本発
明において、触媒としてIIIa族金属錯体が好ましく、特
に有機ネオジム錯体が好ましい。さらに有機ネオジム錯
体が前記式(I)で表わされるものであって、式中、R
がビス(トリメチルシリル)メチル基であるものが特に
好ましい。Among the groups represented by R in the above general formula (I), preferred groups include hydrogen, methyl, trimethylsilylmethyl, bis (trimethylsilyl) methyl, neopentyl, phenyl and benzyl. In the present invention, a group IIIa metal complex is preferable as a catalyst, and an organic neodymium complex is particularly preferable. Further, the organic neodymium complex is represented by the above formula (I), wherein R
Is particularly preferably a bis (trimethylsilyl) methyl group.
【0012】本発明において用いられるIIIa族金属錯体
(希土類金属錯体)は、錯体を形成しているものを用い
てもよいが、反応系中でこれらの錯体を発生させる前駆
体または原料の形で反応系に仕込んでもよい。The group IIIa metal complex (rare earth metal complex) used in the present invention may be one which forms a complex, but in the form of a precursor or a raw material for generating these complexes in the reaction system. It may be charged into the reaction system.
【0013】本発明で用いられるヒドロポリシラン類に
特に制限はないが、これを例示すれば、1,1,2,2
−テトラメチルジシラン、1,1,2,2,3,3,
4,4,5,5,6,6−ドデカメチルヘキサシラン、
ポリ(メチルシリレン)、ポリ(ヘキシルシリレン)等
のポリ(アルキルシリレン)類、ポリ(フェニルシリレ
ン)等のポリ(アリールシリレン)類を挙げることがで
きる。この内、ポリ(アルキルシリレン)類、ポリ(ア
リールシリレン)類が好ましく、特にケイ素原子数が5
個以上であるポリ(アルキルシリレン)類、ポリ(アリ
ールシリレン)類が好ましい。There are no particular restrictions on the hydropolysilanes used in the present invention, but if this is given as an example, 1,1,2,2
-Tetramethyldisilane, 1,1,2,2,3,3,3
4,4,5,5,6,6-dodecamethylhexasilane,
Examples thereof include poly (alkylsilylene) s such as poly (methylsilylene) and poly (hexylsilylene), and poly (arylsilylenes) such as poly (phenylsilylene). Among these, poly (alkylsilylene) s and poly (arylsilylenes) are preferable, and particularly, the number of silicon atoms is 5
Poly (alkylsilylene) s and poly (arylsilylenes) having more than one group are preferable.
【0014】本発明方法において反応温度は通常−50
〜300℃、好ましくは20〜200℃、より好ましく
は20〜160℃である。In the method of the present invention, the reaction temperature is usually -50.
-300 degreeC, Preferably it is 20-200 degreeC, More preferably, it is 20-160 degreeC.
【0015】本発明方法の反応圧力には、特に制限はな
いが、通常、常圧〜100気圧の範囲で実施される。The reaction pressure of the method of the present invention is not particularly limited, but it is usually carried out in the range of atmospheric pressure to 100 atm.
【0016】本発明方法を実施する場合、反応に際して
溶媒は必ずしも必要ではないが、溶媒を用いて反応系を
希釈し、それにより、反応の進行に伴う反応混合物の粘
度の増大を防ぐことも本発明の有利な態様の一つであ
る。ここで用いられる溶媒を例示すれば、トルエン、ベ
ンゼン等の芳香族化合物、ジエチルエーテル、テトラヒ
ドロフラン、ジオキサン等のエーテル類、ペンタン、ヘ
キサン、デカン等の脂肪族炭化水素などが挙げられる。When carrying out the method of the present invention, a solvent is not always necessary for the reaction, but it is also essential to dilute the reaction system with the solvent, thereby preventing the viscosity of the reaction mixture from increasing with the progress of the reaction. This is one of the advantageous aspects of the invention. Examples of the solvent used here include aromatic compounds such as toluene and benzene, ethers such as diethyl ether, tetrahydrofuran and dioxane, and aliphatic hydrocarbons such as pentane, hexane and decane.
【0017】本発明方法において、ヒドロポリシラン類
に対するシランSiH4 またはジシランSi2 H6 の使
用量に特に制限はないが、好ましくはヒドロポリシラン
1molに対してSiH4 またはSi2 H6 を0.01
〜2mol程度の量で用いる。本発明方法において、シ
ラン、ジシランによる処理は、常法により、シラン、ジ
シランの気体を用いて行うことができ、例えば、反応装
置内をこれらの気体で置換して行うことができる。In the method of the present invention, the amount of silane SiH 4 or disilane Si 2 H 6 used with respect to the hydropolysilane is not particularly limited, but preferably 0.01 mol of SiH 4 or Si 2 H 6 per mol of hydropolysilane.
It is used in an amount of about 2 mol. In the method of the present invention, the treatment with silane or disilane can be carried out by using a gas of silane or disilane by a conventional method. For example, the inside of the reactor can be replaced with these gases.
【0018】触媒として用いる前記IIIa族金属錯体また
はIVa 族金属錯体の使用量は、いわゆる触媒量で十分で
あるが、好ましくはヒドロポリシラン1モルに対して
0.001〜0.1mol程度の量が用いられる。The amount of the group IIIa metal complex or the group IVa metal complex used as a catalyst may be a so-called catalytic amount, but preferably about 0.001 to 0.1 mol per mol of hydropolysilane. Used.
【0019】本発明方法で得られるポリシラン類は、そ
れ自身ヒドロポリシラン類であるが、原料として用いる
ヒドロポリシラン類よりも高分子量のものである。ま
た、シランSiH4 またはジシランSi2 H6 が取り込
まれているため、通常、H/Siの原子比が原料におけ
るよりも高くなっている。The polysilanes obtained by the method of the present invention are hydropolysilanes themselves, but have a higher molecular weight than the hydropolysilanes used as a raw material. Further, since silane SiH 4 or disilane Si 2 H 6 is incorporated, the H / Si atomic ratio is usually higher than that in the raw material.
【0020】反応生成物の分離は、溶媒および未反応の
原料をろ過、濃縮などの通常の手段により除去した後
に、再沈、分取GPC等により、容易に行うことができ
る。The reaction product can be easily separated by reprecipitation, preparative GPC, etc., after removing the solvent and unreacted raw materials by usual means such as filtration and concentration.
【0021】[0021]
【発明の効果】本発明によって、ヒドロポリシラン類か
ら、高収率で、より高分子量のポリシラン類を得ること
ができ、その工業的意義は多大である。INDUSTRIAL APPLICABILITY According to the present invention, it is possible to obtain a high molecular weight polysilane having a high yield from a hydropolysilane, and its industrial significance is great.
【0022】[0022]
【実施例】次に本発明を実施例に基づいてさらに詳細に
説明するが、もとより本発明は、これらの実施例に限定
されるものではない。The present invention will be described in more detail based on the following examples, but the invention is by no means limited to these examples.
【0023】実施例1 ステンレス製オートクレーブ(37mlガラスインサー
ト付)に、ビス(ペンタメチルシクロペンタジエニル)
[ビス(トリメチルシリル)メチル]ネオジム(0.0
1mmol)、ポリ(ヘキシルシリレン)(Mw=86
5、Mw/Mn=1.03)354mgを入れた。ここ
でMwは重量平均分子量、Mnは数平均分子量を、それ
ぞれ表わす。シランSiH4 を10気圧まで加圧パージ
を3回繰り返して、装置内をシランSiH4 で置換
(1.5mmol)した後、80℃で48時間反応させ
た。反応混合物から未反応のシランを窒素パージにより
除去して、ポリシランを384mg得た。収率は定量的
であった。GPC分析によると、生成物はMw 46,
000(Mw/Mn=5.00)とMw 1100(M
w/Mn=1.07)の成分からなっていた。EXAMPLE 1 Bis (pentamethylcyclopentadienyl) was added to a stainless steel autoclave (with 37 ml glass insert).
[Bis (trimethylsilyl) methyl] neodymium (0.0
1 mmol), poly (hexylsilylene) (Mw = 86
No. 5, 354 mg of Mw / Mn = 1.03) was added. Here, Mw represents a weight average molecular weight and Mn represents a number average molecular weight, respectively. Silane SiH 4 was purged under pressure up to 10 atm three times to replace the inside of the apparatus with silane SiH 4 (1.5 mmol), and then reacted at 80 ° C. for 48 hours. Unreacted silane was removed from the reaction mixture by nitrogen purge to obtain 384 mg of polysilane. The yield was quantitative. According to GPC analysis, the product was Mw 46,
000 (Mw / Mn = 5.00) and Mw 1100 (M
w / Mn = 1.07).
【0024】生成物の1 H−NMR(C6 D6 )は、
0.7〜1.8ppm(m、ヘキシル基)、および3.
5〜4.5ppm(m、Si−H)の共鳴を示し、積分
より、Si−Hex/Si−H=1:1.78であっ
た。 1 H-NMR (C 6 D 6 ) of the product is
0.7-1.8 ppm (m, hexyl group), and 3.
It showed a resonance of 5 to 4.5 ppm (m, Si-H), and was Si-Hex / Si-H = 1: 1.78 by integration.
【0025】比較例1 ステンレス製オートクレーブ(37mlガラスインサー
ト付)に、ビス(ペンタメチルシクロペンタジエニル)
[ビス(トリメチルシリル)メチル]ネオジム(0.0
1mmol)、ポリ(ヘキシルシリレン)(Mw 86
5、Mw/Mn=1.03)353mgを入れた。80
℃で48時間反応したところ、原料ヒドロポリシラン3
53mgが回収された。回収したポリシランはMw 1
300(Mw/Mn=1.12)であった。Comparative Example 1 A stainless steel autoclave (with 37 ml glass insert) was charged with bis (pentamethylcyclopentadienyl).
[Bis (trimethylsilyl) methyl] neodymium (0.0
1 mmol), poly (hexylsilylene) (Mw 86
5, 353 mg of Mw / Mn = 1.03) was added. 80
After reacting at 48 ° C for 48 hours, the raw material hydropolysilane 3
53 mg was recovered. The recovered polysilane is Mw 1
It was 300 (Mw / Mn = 1.12).
Claims (4)
存在下、ヒドロポリシラン類とシランSiH4 またはジ
シランSi2 H6 を反応させることを特徴とするポリシ
ラン類の製造方法。1. A method for producing polysilanes, which comprises reacting hydropolysilanes with silane SiH 4 or disilane Si 2 H 6 in the presence of a Group IIIa metal complex or a Group IVa metal complex.
リレン)類またはポリ(アリールシリレン)類であるこ
とを特徴とする請求項1記載の方法。2. The method of claim 1, wherein the hydropolysilanes are poly (alkylsilylenes) or poly (arylsilylenes).
ることを特徴とする請求項1または2記載の方法。3. The method according to claim 1, wherein the Group IIIa metal complex is an organic neodymium complex.
を、Meはメチル基を表わす。)で表わされる錯体であ
ることを特徴とする請求項3記載の方法。4. The organic neodymium complex formula Cp * 2 NdCH (SiMe 3) 2 ( wherein, Cp * is a pentamethylcyclopentadienyl group, Me represents a methyl group.) Is a complex represented by The method according to claim 3, wherein:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6068023A JP2615419B2 (en) | 1994-03-11 | 1994-03-11 | Method for producing high molecular weight polysilanes |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6068023A JP2615419B2 (en) | 1994-03-11 | 1994-03-11 | Method for producing high molecular weight polysilanes |
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| Publication Number | Publication Date |
|---|---|
| JPH07247360A true JPH07247360A (en) | 1995-09-26 |
| JP2615419B2 JP2615419B2 (en) | 1997-05-28 |
Family
ID=13361807
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6068023A Expired - Lifetime JP2615419B2 (en) | 1994-03-11 | 1994-03-11 | Method for producing high molecular weight polysilanes |
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| Country | Link |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7943721B2 (en) | 2005-10-05 | 2011-05-17 | Kovio, Inc. | Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06128381A (en) * | 1992-10-15 | 1994-05-10 | Tonen Corp | Production of high-molecular-weight polysilane |
-
1994
- 1994-03-11 JP JP6068023A patent/JP2615419B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06128381A (en) * | 1992-10-15 | 1994-05-10 | Tonen Corp | Production of high-molecular-weight polysilane |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7943721B2 (en) | 2005-10-05 | 2011-05-17 | Kovio, Inc. | Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions |
| US8378050B2 (en) | 2005-10-05 | 2013-02-19 | Kovio, Inc. | Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2615419B2 (en) | 1997-05-28 |
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