JPH0766160A - Abrasive method and apparatus for semiconductor substrate - Google Patents
Abrasive method and apparatus for semiconductor substrateInfo
- Publication number
- JPH0766160A JPH0766160A JP22965993A JP22965993A JPH0766160A JP H0766160 A JPH0766160 A JP H0766160A JP 22965993 A JP22965993 A JP 22965993A JP 22965993 A JP22965993 A JP 22965993A JP H0766160 A JPH0766160 A JP H0766160A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- polishing
- rotating
- liquid
- rotating drum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 114
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000004744 fabric Substances 0.000 claims abstract description 53
- 239000007788 liquid Substances 0.000 claims abstract description 53
- 238000004140 cleaning Methods 0.000 claims abstract description 35
- 238000005498 polishing Methods 0.000 claims description 145
- 230000007246 mechanism Effects 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000005299 abrasion Methods 0.000 abstract 1
- 239000000428 dust Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 239000006260 foam Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体基板の研磨方法
及び研磨装置に関し、更に詳細には半導体基板の精密研
磨の要求にも対応できる研磨性の良好な研磨方法と研磨
装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing method and a polishing apparatus for a semiconductor substrate, and more particularly to a polishing method and a polishing apparatus having a good polishing property that can meet the demand for precision polishing of a semiconductor substrate. .
【0002】[0002]
【従来の技術】従来、半導体基板の表面は、図4に示す
ように、研磨布50を張り付けた平坦な回転定盤52を
軸54の周りに回転させ、研磨布面に研磨液を流しなが
ら研磨布上に基板Aの表面を押し付けることにより、研
磨されていた。基板Aは、矢印の方向の真空吸引により
吸着板56に吸着保持されている。2. Description of the Related Art Conventionally, on the surface of a semiconductor substrate, as shown in FIG. 4, a flat rotary platen 52 to which a polishing cloth 50 is attached is rotated around a shaft 54 while flowing a polishing liquid on the surface of the polishing cloth. It was polished by pressing the surface of the substrate A onto the polishing cloth. The substrate A is suction-held on the suction plate 56 by vacuum suction in the direction of the arrow.
【0003】[0003]
【発明が解決しようとする課題】しかし、集積回路基板
の層間平坦化研磨や、SOI基板の高精度な平坦化研磨
等の基板の精密研磨が要求されるにつれて、かかる従来
の方法では、基板表面と研磨布との間で均一な面接触を
実際には維持できないため、均一な精密研磨を行うこと
が難しかった。また、高平坦で硬質な研磨布を用いてい
て研磨液が基板表面に浸透し難いため、更には研磨液を
基板表面に均一かつ確実に供給することが難しいため、
研磨ムラが生じると言う問題があった。また、研磨材と
して細い繊維からなる研磨布、或いは微細発泡層からな
る研磨布を用いているため、研磨屑により、短時間に目
詰まりが生じ易い。そこで、ブラッシング、或いはダイ
ヤモンドペレット等によるドレッシングを研磨布に施し
て、研磨布から研磨屑を除去、クリーニングしている。
しかし、現実には、効果的なクリーニングが難しく、研
磨布の寿命が短くなると言う問題があった。更には、上
述の研磨布は、研磨時に基板が浮き易く(ハイドロプレ
ーン現象)、そのため適度な摩擦抵抗が発生せず、研磨
レートが低下してしまう問題があった。However, as the precision polishing of the substrate such as the interlayer flattening polishing of the integrated circuit substrate and the high precision flattening polishing of the SOI substrate is demanded, the conventional method is used in the conventional method. Since it is not possible to actually maintain a uniform surface contact between the polishing cloth and the polishing cloth, it is difficult to perform uniform precision polishing. Further, since a polishing liquid using a highly flat and hard polishing cloth is difficult to penetrate into the substrate surface, further difficult to uniformly and reliably supply the polishing liquid to the substrate surface,
There is a problem that uneven polishing occurs. Further, since a polishing cloth made of fine fibers or a polishing cloth made of a fine foam layer is used as the polishing material, clogging easily occurs in a short time due to polishing dust. Therefore, brushing or dressing with diamond pellets or the like is applied to the polishing cloth to remove polishing dust and clean the polishing cloth.
However, in reality, there is a problem that effective cleaning is difficult and the life of the polishing cloth is shortened. Further, the above-mentioned polishing cloth has a problem that the substrate easily floats during polishing (hydroplane phenomenon), and therefore, appropriate frictional resistance does not occur and the polishing rate decreases.
【0004】上述の問題に鑑み、本発明は、研磨ムラ及
びハイドロプレーン現象が起こり難く、研磨布のクリー
ニングが容易で研磨布の寿命が長くなるように改良され
た、半導体基板の研磨方法並びに研磨具を提供すること
である。In view of the above problems, the present invention has been improved so that uneven polishing and hydroplane phenomenon hardly occur, cleaning of the polishing cloth is easy, and the life of the polishing cloth is extended, and a polishing method for a semiconductor substrate. Is to provide the ingredients.
【0005】[0005]
【課題を解決するための手段】上記目的を達成するため
に、本発明に係る半導体基板の研磨方法は、表面を露出
するようにして半導体基板を基板保持台上に保持し、基
板に直交する軸の周りに該基板を回転させつつ、微細貫
通孔を有する研磨布を巻きつけた円筒形回転ドラムを回
転する基板表面に押圧、接触させながら、前後に進退し
て回転させ、一方、回転ドラムの内部に研磨液又は洗浄
液を導入し、回転ドラム壁に設けた微細貫通孔及び研磨
布の微細貫通孔を通じて研磨液又は洗浄液を基板表面に
供給しながら、半導体基板の研磨及び洗浄を行うように
したことを特徴としている。In order to achieve the above object, a method of polishing a semiconductor substrate according to the present invention holds a semiconductor substrate on a substrate holder so that the surface is exposed and is orthogonal to the substrate. While rotating the substrate around an axis, a cylindrical rotating drum wound with a polishing cloth having fine through holes is rotated forward and backward while pressing and contacting the surface of the rotating substrate, while rotating the drum. The polishing liquid or the cleaning liquid is introduced into the inside of the rotary drum, and the polishing liquid or the cleaning liquid is supplied to the substrate surface through the fine through holes provided in the rotary drum wall and the fine through holes of the polishing cloth, so that the semiconductor substrate is polished and cleaned. It is characterized by having done.
【0006】半導体基板を基板保持台上に保持する手段
は、特に制約はないが、例えば真空吸引により基板を基
板保持台に保持する。本発明で使用する研磨布は、従来
から使用してきた、例えば発泡ポリウレタンに微細貫通
孔を設けたもの等を使用できる。また、研磨液又は洗浄
液を基板表面に供給するためには、好適には、例えば回
転ドラムの内部に圧力空気を供給し、回転ドラムの内外
の圧力差で研磨液又は洗浄液を流出させるようにする。
又、研磨布洗浄の便宜のため、回転ドラム内を減圧する
ようにしてもよい。The means for holding the semiconductor substrate on the substrate holder is not particularly limited, but the substrate is held on the substrate holder by vacuum suction, for example. The polishing cloth used in the present invention may be a conventionally used one, for example, foamed polyurethane provided with fine through holes. Further, in order to supply the polishing liquid or the cleaning liquid to the surface of the substrate, it is preferable that, for example, pressurized air is supplied to the inside of the rotating drum so that the polishing liquid or the cleaning liquid flows out due to the pressure difference between the inside and the outside of the rotating drum. .
Further, for the convenience of cleaning the polishing cloth, the pressure inside the rotary drum may be reduced.
【0007】上述の本発明方法を実施する、本発明に係
る半導体基板の研磨装置は、表面を露出するようにして
半導体基板を保持し、基板に直交する軸の周りに該基板
を回転させる基板保持台と、回転する該基板保持台上の
基板の表面を研磨する研磨具との組合せであって、基板
保持台は、真空吸着して基板を保持する基板吸着板と、
基板吸着板を基板に直交する軸の周りに回転させる回転
機構とを備え、研磨具は、長手方向中心線に沿った回転
軸周りに回転自在な円筒形の回転ドラムと、回転軸を両
端で軸支する保持アームと、保持アームを介して基板表
面に押圧接触させた回転ドラムを前後に進退させつつ回
転させる進退機構とを備え、回転ドラムの円筒壁には微
細な貫通孔が設けられ、かつ円筒壁の外周面には基板表
面を研磨するための透水性研磨布が装着され、更に回転
ドラムの回転軸は、外部から研磨液又は洗浄液を供給す
る供給口と、該供給口から研磨液又は洗浄液を回転ドラ
ム内部に導入する手段を備えていることを特徴としてい
る。A semiconductor substrate polishing apparatus according to the present invention for carrying out the above-described method of the present invention holds a semiconductor substrate with its surface exposed and rotates the substrate about an axis orthogonal to the substrate. A combination of a holding table and a polishing tool for polishing the surface of a substrate on the rotating substrate holding table, wherein the substrate holding table includes a substrate suction plate that holds the substrate by vacuum suction.
The polishing tool includes a rotating mechanism that rotates the substrate suction plate around an axis orthogonal to the substrate, and the polishing tool includes a cylindrical rotating drum that is rotatable around a rotation axis along the longitudinal centerline, and a rotating shaft at both ends. A supporting arm for supporting the shaft and an advancing / retreating mechanism for advancing and retracting the rotating drum pressed and brought into contact with the substrate surface via the holding arm to rotate back and forth are provided, and a fine through hole is provided in the cylindrical wall of the rotating drum. Further, a water-permeable polishing cloth for polishing the surface of the substrate is attached to the outer peripheral surface of the cylindrical wall, and the rotating shaft of the rotary drum has a supply port for supplying a polishing liquid or a cleaning liquid from the outside and a polishing liquid from the supply port. Alternatively, it is characterized in that a means for introducing the cleaning liquid into the rotary drum is provided.
【0008】透水性研磨布とは、例えば微細発泡層から
なる研磨布等の微細貫通孔を多数備えた研磨布、或いは
その他の種類の透水性、通水性の研磨布である。本発明
で使用する、基板保持台の回転機構及び回転ドラムの進
退機構は、常用する既知の機構を使用できる。また、回
転ドラム内部を加圧して研磨液又は洗浄液を基板表面に
流出し易いようにするために、好適には例えば圧力空気
を回転ドラム内部に供給し、回転ドラムの内外の圧力差
で研磨液又は洗浄液を流出させるようにする。又、研磨
布の洗浄の便宜のため、回転ドラム内を減圧するように
してもよい。The water-permeable polishing cloth is, for example, a polishing cloth having a large number of fine through holes such as a polishing cloth made of a fine foam layer, or another kind of water-permeable and water-permeable polishing cloth. As the rotating mechanism of the substrate holder and the advancing / retreating mechanism of the rotating drum used in the present invention, known and commonly used mechanisms can be used. Further, in order to pressurize the inside of the rotating drum so that the polishing liquid or the cleaning liquid can easily flow out to the substrate surface, for example, pressurized air is supplied to the inside of the rotating drum, and the polishing liquid is applied by the pressure difference between the inside and outside of the rotating drum. Or, let the washing liquid flow out. Further, for the convenience of cleaning the polishing cloth, the pressure inside the rotary drum may be reduced.
【0009】[0009]
【作用】請求項1の半導体基板の研磨方法及び請求項2
の研磨装置では、研磨液が回転ドラムの微細貫通孔及び
研磨布の微細貫通孔を介して研磨布の全面から均一に基
板表面に供給されるので、研磨ムラが無くなる。また、
研磨布は、回転ドラムに巻回されているので、回転する
基板表面に対して面接触でなく、線接触ないし曲面接触
する。よって、均一な接触が可能となり、更には、ハイ
ドロプレーン現象が発生しない。よって、十分な摩擦抵
抗が得られ、高い研磨レートで安定した研磨ができる。
更には、洗浄液が回転ドラムの貫通孔を介して研磨布の
裏面から表面に供給されるので、洗浄液が研磨布を目詰
まりさせた研磨屑を十分に洗い流して、効果的にクリー
ニングする。よって、研磨布の寿命が長くなる。A method of polishing a semiconductor substrate according to claim 1 and claim 2.
In the polishing apparatus, the polishing liquid is uniformly supplied to the substrate surface from the entire surface of the polishing cloth through the fine through holes of the rotary drum and the fine through holes of the polishing cloth, so that polishing unevenness is eliminated. Also,
Since the polishing cloth is wound around the rotary drum, it does not come into surface contact with the surface of the rotating substrate but line contact or curved surface contact. Therefore, uniform contact is possible, and further, the hydroplane phenomenon does not occur. Therefore, sufficient frictional resistance can be obtained, and stable polishing can be performed at a high polishing rate.
Furthermore, since the cleaning liquid is supplied from the back surface of the polishing cloth to the front surface through the through holes of the rotary drum, the cleaning liquid sufficiently rinses away the polishing dust that has clogged the polishing cloth, thereby effectively cleaning. Therefore, the life of the polishing cloth is extended.
【0010】[0010]
【実施例】図1は研磨具と基板保持台とを使用した本発
明方法の実施状況を説明する模式的斜視図、図2は図1
に示す研磨具の模式的側面断面図及び図3は図1に示し
た研磨具と基板保持台の要部を示す模式的側面断面図で
ある。本発明に係る半導体基板の研磨方法は、図1に示
すように、研磨具12と基板保持台14との組合せから
なる研磨装置10を使用して実施される。基板保持台1
4は、図3に示すように、円板状の吸着板支持体16
と、吸着板支持体16の円筒形凹部18に嵌合させた多
孔質吸着板20とを備えている。吸着板支持体16は、
回転装置(図示せず)によって吸着板20と共に回転軸
22の周り矢印Wの方向に回転する。更に、回転軸22
には、その中心線に沿って貫通孔24が設けてあり、そ
の貫通孔24は、吸着板支持体16を貫通して吸着板2
0に連通している。基板Aは、吸着板20上に載置さ
れ、貫通孔24及び吸着板20を介して基板Aを真空吸
引することにより、基板Aを吸着板20上に強固に保持
することが出来る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic perspective view for explaining the practice of the method of the present invention using a polishing tool and a substrate holder, and FIG.
3 is a schematic side sectional view of the polishing tool shown in FIG. 3 and FIG. 3 is a schematic side sectional view showing the essential parts of the polishing tool and the substrate holder shown in FIG. The method for polishing a semiconductor substrate according to the present invention is carried out by using a polishing apparatus 10 including a combination of a polishing tool 12 and a substrate holder 14 as shown in FIG. Substrate holder 1
As shown in FIG. 3, 4 is a disc-shaped suction plate support 16
And a porous suction plate 20 fitted in the cylindrical recess 18 of the suction plate support 16. The suction plate support 16 is
The rotation device (not shown) rotates together with the suction plate 20 around the rotation shaft 22 in the direction of arrow W. Furthermore, the rotary shaft 22
Has a through hole 24 along its center line, and the through hole 24 penetrates the suction plate support 16 and penetrates the suction plate 2.
It communicates with 0. The substrate A is placed on the suction plate 20, and the substrate A can be firmly held on the suction plate 20 by vacuum suction of the substrate A via the through holes 24 and the suction plate 20.
【0011】研磨具12は、回転ドラム26と、回転ド
ラム26を保持する保持アーム28とを備えていて、回
転する基板保持台14上の基板Aに回転ドラム26を押
圧接触させ、かつ回転ドラム26を前後に進退して回転
させるようなやり方で使用される。回転ドラム26は、
図2に示すように、両端面が閉止された円筒形ドラムで
あって、その長手方向中心線に沿って延在する回転軸3
0周りに自在に回転するように構成されている。回転軸
30は、その両端で保持アーム28により軸支されてい
る。回転軸30の一方の端部に設けられた供給口32に
は、柔軟なホース36(図1参照)が接続されて研磨液
又は洗浄液が供給される。更に、供給口32は、回転軸
30内に配置された導管(図示せず)に接続し、導管に
設けられた下向きの複数のノズルを介して回転ドラム2
6の内部34に研磨液又は洗浄液を供給する。回転ドラ
ム26は、外部からベルト駆動(図示せず)等により強
制的に回転力が与えられて、矢印Uに示すように回転す
る。The polishing tool 12 is provided with a rotary drum 26 and a holding arm 28 for holding the rotary drum 26. The rotary drum 26 is pressed against and brought into contact with the substrate A on the rotating substrate holder 14 and the rotary drum 26 is held. It is used in such a way as to rotate 26 back and forth. The rotary drum 26 is
As shown in FIG. 2, the rotary shaft 3 is a cylindrical drum whose both end surfaces are closed and which extends along the longitudinal centerline thereof.
It is configured to freely rotate around 0. The rotary shaft 30 is pivotally supported by the holding arms 28 at both ends thereof. A flexible hose 36 (see FIG. 1) is connected to a supply port 32 provided at one end of the rotary shaft 30 to supply a polishing liquid or a cleaning liquid. Further, the supply port 32 is connected to a conduit (not shown) arranged in the rotary shaft 30, and the rotary drum 2 is connected through a plurality of downward nozzles provided in the conduit.
A polishing liquid or a cleaning liquid is supplied to the inner portion 34 of 6. The rotating drum 26 is forcibly given a rotational force from the outside by belt driving (not shown) or the like, and rotates as indicated by an arrow U.
【0012】回転ドラム26の円筒壁の外周面には、裏
面から表面に透水できる多孔質の研磨布38、例えばロ
デール・ニッタ株式会社製の商品名MHポリシングクロ
スが被覆されている。更に、回転ドラム26の円筒壁に
は、径の細い多数の貫通孔40が均一な分布で設けてあ
る。 本研磨装置10では、圧縮空気を導入する常用の
手段(図示せず)を回転ドラム26に設け、圧縮空気を
導入して回転ドラム26の内部34を加圧できるように
なっている。回転ドラム26の内外に生じた圧力差でも
って、回転ドラム26の円筒壁の貫通孔40及び透水性
研磨布38を通して、回転ドラム26の研磨液又は洗浄
液を基板Aの表面に流出させるようにしている。The outer peripheral surface of the cylindrical wall of the rotary drum 26 is covered with a porous polishing cloth 38 that allows water to pass from the back surface to the front surface, for example, MH polishing cloth manufactured by Rodel Nitta Corporation. Further, the cylindrical wall of the rotary drum 26 is provided with a large number of through holes 40 having a small diameter in a uniform distribution. In the polishing apparatus 10, a commonly used means (not shown) for introducing compressed air is provided on the rotary drum 26 so that compressed air can be introduced to pressurize the inside 34 of the rotary drum 26. The polishing liquid or cleaning liquid of the rotating drum 26 is caused to flow to the surface of the substrate A through the through hole 40 of the cylindrical wall of the rotating drum 26 and the water-permeable polishing cloth 38 by the pressure difference generated inside and outside the rotating drum 26. There is.
【0013】図1から図3を参照しながら、上記構成の
研磨装置10を使用して本発明に係る半導体基板の研磨
方法を説明する。基板Aを基板保持台14の吸着板20
上に載置し、真空吸引装置(図示せず)を起動して矢印
V(図3参照)の方向に吸引する。これによって、基板
Aは吸着板20上に強固に保持される。次いで、回転装
置(図示せず)を起動して基板保持台14を回転軸22
の周り矢印Wの方向に適当な回転数で回転させる。A polishing method for a semiconductor substrate according to the present invention using the polishing apparatus 10 having the above structure will be described with reference to FIGS. The substrate A is attached to the suction plate 20 of the substrate holder 14.
It is placed on top and a vacuum suction device (not shown) is activated to suck in the direction of arrow V (see FIG. 3). As a result, the substrate A is firmly held on the suction plate 20. Then, a rotation device (not shown) is activated to move the substrate holder 14 to the rotation shaft 22.
Rotate around in the direction of arrow W at an appropriate number of rotations.
【0014】次に、研磨具12を用意して、ホース36
を介して研磨液を回転ドラム26の内部34に導入し、
かつ圧縮空気で回転ドラム26内を加圧しつつ、回転ド
ラム26を基板A上に押圧接触させ、保持アーム28を
介して図2に示すように矢印Xの方向に進退させる。研
磨液は、回転ドラム26の内部34から回転ドラム26
の円筒壁の貫通孔40及び研磨布38を介して基板A上
に滲み出す。また、回転ドラム26の貫通孔40及び研
磨布38の多孔質の孔に洗浄液を研磨液と同様の方法で
導入することより、スクラバー洗浄と研磨布の目詰まり
の洗浄を連続して行うことができる。Next, the polishing tool 12 is prepared and the hose 36
The polishing liquid is introduced into the inside 34 of the rotary drum 26 via
While pressing the rotary drum 26 with compressed air, the rotary drum 26 is pressed and brought into contact with the substrate A and is moved back and forth in the direction of arrow X via the holding arm 28 as shown in FIG. The polishing liquid flows from the inside 34 of the rotary drum 26 to the rotary drum 26.
Bleed on the substrate A through the through hole 40 of the cylindrical wall and the polishing cloth 38. Further, by introducing the cleaning liquid into the through holes 40 of the rotating drum 26 and the porous holes of the polishing cloth 38 in the same manner as the polishing liquid, the scrubber cleaning and the cleaning of the polishing cloth for clogging can be continuously performed. it can.
【0015】[0015]
【発明の効果】請求項1に記載の半導体基板の研磨方法
によれば、半導体基板を回転させつつ、研磨布を巻いた
回転ドラムを基板表面に押圧接触させながら前後に進退
させ、一方回転ドラムの内部に研磨液又は洗浄液を導入
し、これらの研磨液を回転ドラムの微細貫通孔を通じて
基板表面に供給することにより、研磨液が均一に基板上
に供給されるので、研磨ムラが無くなる。また研磨布が
平面でなく曲面で基板表面に接触するので、ハイドロプ
レーン現象が発生しない。よって、十分な摩擦抵抗が得
られ、高い研磨レートで安定した研磨ができる。更に
は、洗浄液が回転ドラムの貫通孔を介して研磨布の裏面
から表面に供給されるので、洗浄液が研磨布を目詰まり
させた研磨屑を十分に洗い流して、効果的にクリーニン
グする。よって、研磨布の寿命が長くなる。本発明方法
を適用することにより、集積回路基板の層間平坦化研磨
や、SOI基板の高精度な平坦化研磨等の基板精密研磨
の要求に対応することができる。According to the method of polishing a semiconductor substrate of the first aspect of the present invention, while rotating the semiconductor substrate, the rotating drum wound with the polishing cloth is pushed back and forth while pressingly contacting the substrate surface, while the rotating drum is rotated. By introducing a polishing liquid or a cleaning liquid into the inside of the substrate and supplying these polishing liquids to the surface of the substrate through the fine through holes of the rotary drum, the polishing liquid is uniformly supplied onto the substrate, so that polishing unevenness is eliminated. Moreover, since the polishing cloth contacts the substrate surface not by a flat surface but by a curved surface, the hydroplane phenomenon does not occur. Therefore, sufficient frictional resistance can be obtained, and stable polishing can be performed at a high polishing rate. Furthermore, since the cleaning liquid is supplied from the back surface of the polishing cloth to the front surface through the through holes of the rotary drum, the cleaning liquid sufficiently rinses away the polishing dust that has clogged the polishing cloth, thereby effectively cleaning. Therefore, the life of the polishing cloth is extended. By applying the method of the present invention, it is possible to meet requirements for precision substrate polishing such as interlayer flattening polishing of an integrated circuit substrate and highly accurate flattening polishing of an SOI substrate.
【0016】請求項2の発明によれば、真空吸着により
基板を保持しつつ基板を回転する基板保持台と、基板保
持台と協働して、基板表面を研磨する研磨具との組合せ
からなり、研磨具は、透水性の研磨布を外周に巻いた回
転自在な回転ドラムを備え、かつ回転ドラム内部から回
転ドラム壁の貫通孔及び透水性研磨布を介して研磨液又
は洗浄液を基板表面に供給するようにした研磨装置の構
成により、研磨液が均一に基板上に供給されるので、研
磨ムラが無くなる。また、研磨布が平面でなく曲面で基
板表面に接触するので、ハイドロプレーン現象が発生し
ない。よって、十分な摩擦抵抗が得られ、高い研磨レー
トで安定した研磨ができる。更には、洗浄液が回転ドラ
ムの貫通孔を介して研磨布の裏面から表面に供給される
ので、研磨布を目詰まりさせた研磨屑を洗い流して、効
果的にクリーニングする。よって、研磨布の寿命が長く
なる。According to the second aspect of the present invention, there is provided a combination of a substrate holder for rotating the substrate while holding the substrate by vacuum suction, and a polishing tool for polishing the surface of the substrate in cooperation with the substrate holder. The polishing tool includes a rotatable rotary drum having a water-permeable polishing cloth wound around the outer periphery thereof, and the polishing liquid or the cleaning liquid is applied to the substrate surface from the inside of the rotation drum through the through hole of the rotation drum wall and the water-permeable polishing cloth. With the configuration of the polishing apparatus that supplies the polishing liquid, the polishing liquid is uniformly supplied onto the substrate, so that polishing unevenness is eliminated. Moreover, since the polishing cloth contacts the surface of the substrate with a curved surface instead of a flat surface, the hydroplane phenomenon does not occur. Therefore, sufficient frictional resistance can be obtained, and stable polishing can be performed at a high polishing rate. Furthermore, since the cleaning liquid is supplied from the back surface of the polishing cloth to the front surface through the through holes of the rotary drum, the polishing debris clogging the polishing cloth is washed away and the cleaning is effectively performed. Therefore, the life of the polishing cloth is extended.
【図1】研磨具と基板保持台とを使用した本発明方法の
実施状況を説明する模式的斜視図である。FIG. 1 is a schematic perspective view illustrating an implementation situation of a method of the present invention using a polishing tool and a substrate holder.
【図2】図1に示す研磨具の模式的側面断面図である。FIG. 2 is a schematic side sectional view of the polishing tool shown in FIG.
【図3】図1に示した研磨具と基板保持台の要部を示す
模式的側面断面図である。3 is a schematic side cross-sectional view showing the main parts of the polishing tool and the substrate holder shown in FIG.
【図4】従来の半導体基板の研磨方法を説明する斜視図
である。FIG. 4 is a perspective view illustrating a conventional method for polishing a semiconductor substrate.
10 研磨装置 12 研磨具 14 基板保持台 16 吸着板支持体 18 円形凹部 20 吸着板 22 回転軸 24 貫通孔 26 回転ドラム 28 保持アーム 30 回転軸 32 供給口 34 回転ドラムの内部 36 ホース 38 研磨布 40 貫通孔 Reference Signs List 10 polishing device 12 polishing tool 14 substrate holder 16 suction plate support 18 circular recess 20 suction plate 22 rotary shaft 24 through hole 26 rotary drum 28 holding arm 30 rotary shaft 32 supply port 34 inside rotary drum 36 hose 38 polishing cloth 40 Through hole
Claims (2)
基板保持台上に保持し、基板に直交する軸の周りに該基
板を回転させつつ、 微細貫通孔を有する研磨布を巻きつけた円筒形回転ドラ
ムを前記回転する基板表面に押圧、接触させながら、前
後に進退して回転させ、 一方、回転ドラムの内部に研磨液又は洗浄液を導入し、
回転ドラム壁に設けた微細貫通孔及び研磨布の微細貫通
孔を通じて研磨液又は洗浄液を基板表面に供給しなが
ら、半導体基板の研磨及び洗浄を行うようにしたことを
特徴とする半導体基板の研磨方法。1. A cylinder in which a semiconductor substrate is held on a substrate holder with its surface exposed, and the polishing cloth having fine through holes is wrapped around the substrate while rotating the substrate about an axis orthogonal to the substrate. While pressing and contacting the rotating drum surface with the rotating substrate surface, it is moved forward and backward to rotate, while introducing a polishing liquid or a cleaning liquid into the rotating drum,
A method for polishing a semiconductor substrate, characterized in that polishing and cleaning of the semiconductor substrate are performed while supplying a polishing liquid or a cleaning liquid to the substrate surface through the fine through holes provided in the wall of the rotating drum and the fine through holes of the polishing cloth. .
保持し、基板に直交する軸の周りに該基板を回転させる
基板保持台と、回転する該基板保持台上の基板の表面を
研磨する研磨具との組合せであって、 基板保持台は、真空吸着して基板を保持する基板吸着板
と、基板吸着板を基板に直交する軸の周りに回転させる
回転機構とを備え、 研磨具は、長手方向中心線に沿った回転軸周りに回転自
在な円筒形の回転ドラムと、回転軸を両端で軸支する保
持アームと、保持アームを介して基板表面に押圧接触さ
せた回転ドラムを前後に進退させつつ回転させる進退機
構とを備え、 前記回転ドラムの円筒壁には微細な貫通孔が設けられ、
かつ円筒壁の外周面には基板表面を研磨するための透水
性研磨布が装着され、更に前記回転ドラムの回転軸は、
外部から研磨液又は洗浄液を供給する供給口と、該供給
口から前記研磨液又は洗浄液を前記回転ドラム内部に導
入する手段を備えていることを特徴とする研磨装置。2. A substrate holder that holds a semiconductor substrate such that the surface is exposed and rotates the substrate about an axis orthogonal to the substrate, and a surface of the substrate on the rotating substrate holder that is rotated is polished. A combination with a polishing tool, wherein the substrate holding table includes a substrate suction plate that holds the substrate by vacuum suction, and a rotating mechanism that rotates the substrate suction plate around an axis orthogonal to the substrate. , A cylindrical rotating drum that is rotatable about a rotation axis along the longitudinal centerline, a holding arm that supports the rotation shaft at both ends, and a rotating drum that is in pressure contact with the substrate surface via the holding arm. And a reciprocating mechanism that rotates while advancing and retreating to, a fine through hole is provided in the cylindrical wall of the rotating drum,
Further, a water-permeable polishing cloth for polishing the substrate surface is attached to the outer peripheral surface of the cylindrical wall, and the rotating shaft of the rotating drum is
A polishing apparatus comprising: a supply port for supplying a polishing liquid or a cleaning liquid from the outside; and a means for introducing the polishing liquid or the cleaning liquid into the rotary drum from the supply port.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22965993A JPH0766160A (en) | 1993-08-24 | 1993-08-24 | Abrasive method and apparatus for semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22965993A JPH0766160A (en) | 1993-08-24 | 1993-08-24 | Abrasive method and apparatus for semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0766160A true JPH0766160A (en) | 1995-03-10 |
Family
ID=16895673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22965993A Pending JPH0766160A (en) | 1993-08-24 | 1993-08-24 | Abrasive method and apparatus for semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0766160A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0950975A (en) * | 1995-08-07 | 1997-02-18 | Samsung Electron Co Ltd | Wafer polishing equipment |
| US5707274A (en) * | 1996-07-09 | 1998-01-13 | Lg Semicon Co., Ltd. | Chemical mechanical polishing apparatus for semiconductor wafer |
| US5791969A (en) * | 1994-11-01 | 1998-08-11 | Lund; Douglas E. | System and method of automatically polishing semiconductor wafers |
| WO2001019567A1 (en) * | 1999-09-13 | 2001-03-22 | Lam Research Corporation | Method and system for chemical mechanical polishing with a cylindrical polishing pad |
| JP2003059869A (en) * | 2001-07-30 | 2003-02-28 | Lsi Logic Corp | Chemical-mechanical polishing apparatus and method employing cylindrical roller |
| EP1002626A3 (en) * | 1998-11-19 | 2003-07-02 | Chartered Semiconductor Manufacturing Pte Ltd. | A linear CMP tool design using in-situ slurry distribution and concurrent pad conditionning |
| JP2011249837A (en) * | 2005-09-15 | 2011-12-08 | Fujitsu Semiconductor Ltd | Method of manufacturing semiconductor device, polishing device, and polishing system |
| CN112847082A (en) * | 2019-11-11 | 2021-05-28 | 株式会社迪思科 | Holding surface cleaning device |
-
1993
- 1993-08-24 JP JP22965993A patent/JPH0766160A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5791969A (en) * | 1994-11-01 | 1998-08-11 | Lund; Douglas E. | System and method of automatically polishing semiconductor wafers |
| JPH0950975A (en) * | 1995-08-07 | 1997-02-18 | Samsung Electron Co Ltd | Wafer polishing equipment |
| US5707274A (en) * | 1996-07-09 | 1998-01-13 | Lg Semicon Co., Ltd. | Chemical mechanical polishing apparatus for semiconductor wafer |
| DE19648066C2 (en) * | 1996-07-09 | 2002-01-31 | Lg Semicon Co Ltd | Chemical mechanical polishing device for semiconductor wafers |
| EP1002626A3 (en) * | 1998-11-19 | 2003-07-02 | Chartered Semiconductor Manufacturing Pte Ltd. | A linear CMP tool design using in-situ slurry distribution and concurrent pad conditionning |
| WO2001019567A1 (en) * | 1999-09-13 | 2001-03-22 | Lam Research Corporation | Method and system for chemical mechanical polishing with a cylindrical polishing pad |
| US6347977B1 (en) | 1999-09-13 | 2002-02-19 | Lam Research Corporation | Method and system for chemical mechanical polishing |
| JP2003509852A (en) * | 1999-09-13 | 2003-03-11 | ラム リサーチ コーポレーション | Method and system for chemical mechanical polishing using a cylindrical polishing pad |
| JP2003059869A (en) * | 2001-07-30 | 2003-02-28 | Lsi Logic Corp | Chemical-mechanical polishing apparatus and method employing cylindrical roller |
| JP2011249837A (en) * | 2005-09-15 | 2011-12-08 | Fujitsu Semiconductor Ltd | Method of manufacturing semiconductor device, polishing device, and polishing system |
| CN112847082A (en) * | 2019-11-11 | 2021-05-28 | 株式会社迪思科 | Holding surface cleaning device |
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