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JPH0774023A - Integrated inductor and surface acoustic wave device using the same - Google Patents

Integrated inductor and surface acoustic wave device using the same

Info

Publication number
JPH0774023A
JPH0774023A JP5217197A JP21719793A JPH0774023A JP H0774023 A JPH0774023 A JP H0774023A JP 5217197 A JP5217197 A JP 5217197A JP 21719793 A JP21719793 A JP 21719793A JP H0774023 A JPH0774023 A JP H0774023A
Authority
JP
Japan
Prior art keywords
conductor
substrate
integrated inductor
integrated
acoustic wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5217197A
Other languages
Japanese (ja)
Inventor
Akitsuna Yuhara
章綱 湯原
Kunio Matsumoto
邦夫 松本
Jun Yamada
山田  純
Seiichi Ogawa
誠一 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5217197A priority Critical patent/JPH0774023A/en
Publication of JPH0774023A publication Critical patent/JPH0774023A/en
Pending legal-status Critical Current

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  • Coils Or Transformers For Communication (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

(57)【要約】 【目的】Qの高く、損失の小さな集積化インダクタを可
能とすることであって、これにより、モジュール化され
た弾性表面波装置を小形かつ低損失とし、この弾性表面
波装置を用いて、移動体通信機器の小形軽量化、高性能
化を図ることにある。 【構成】表面の平滑なスパイラル状の導体パターンを誘
電率、tanδの小さな樹脂からなる絶縁体基板に埋め
込み、その際、導体が基板の中に入って行く程、導体幅
が太くなる様にすると共に、導体の基板法線方向の厚さ
を増し、導体幅の1/2程度乃至それ以上に厚くした集
積化インダクタとした。
(57) [Abstract] [Purpose] The purpose of the present invention is to enable an integrated inductor with a high Q and a low loss, thereby making a modularized surface acoustic wave device compact and low loss. The purpose of this device is to reduce the size and weight of mobile communication devices and to improve their performance. [Construction] A spiral conductor pattern having a smooth surface is embedded in an insulating substrate made of a resin having a small dielectric constant and tan δ, and the conductor width becomes thicker as the conductor gets into the substrate. At the same time, the thickness of the conductor in the substrate normal direction was increased to be about 1/2 or more of the conductor width to provide an integrated inductor.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、高周波電子回路ないし
は高周波電子部品に使用する集積化に適したインダク
タ、特に高周波の弾性表面波装置の整合回路素子ないし
は結合素子として用い弾性表面波装置を小型化、表面実
装化しかも低損失化しうるインダクタに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inductor suitable for integration used in a high frequency electronic circuit or a high frequency electronic component, and particularly as a matching circuit element or a coupling element of a high frequency surface acoustic wave device, and a small surface acoustic wave device. The present invention relates to an inductor that can be reduced in size, reduced in surface mount, and reduced in loss.

【0002】[0002]

【従来の技術】従来、インダクタを集積化するために
は、ガラスエポキシ基板上にスパイラル状に形成された
銅パターン、もしくはアルミナ等のセラミック基板上に
スパイラル状に形成された銀系、金系、銅系の何れかの
パターンが用いられてきた。
2. Description of the Related Art Conventionally, in order to integrate an inductor, a copper pattern spirally formed on a glass epoxy substrate or a silver-based or gold-based spirally formed on a ceramic substrate such as alumina, Either copper-based pattern has been used.

【0003】この様な技術として、特開昭62−986
05号公報がある。
As such a technique, Japanese Patent Laid-Open No. 62-986 is known.
There is No. 05 publication.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、上記従
来の集積化されたインダクタでは次の様な課題があっ
た。即ち、数百MHz以上の高周波におけるQが低い、
換言するとインダクタの高周波における電気抵抗が十分
に低くないことであって、高周波の弾性表面波装置に用
いた場合、損失を大きくしていた。
However, the above-mentioned conventional integrated inductor has the following problems. That is, the Q at a high frequency of several hundred MHz or more is low,
In other words, the electric resistance of the inductor at high frequencies is not sufficiently low, and when used in a high frequency surface acoustic wave device, the loss was increased.

【0005】上記従来の技術では導体パターンと基板の
間の付着強度を確保するために基板表面を数μm乃至十
数μmの凹凸で粗面化しており、そのため、導体の基板
との付着面が粗面化するのみならず、反対の面である表
面側もその影響を受け、粗面化する。その結果、高周波
において実質的に電流が流れる表面から表皮深さ以内の
表面部分で即ち表皮部分で電気抵抗が少なくとも30%
乃至60%程度増加してしまう。また導体パターンへの
ワイヤボンディングを行うため、導体パターン表面に金
薄膜を形成するが、その際、金薄膜の下地にニッケル膜
を数μmの厚さに形成するので、高周波的に有効な表皮
部分の電気抵抗がニッケル膜の大きな電気抵抗により支
配され、更に表面の粗面化により大きくなる。
In the above conventional technique, the surface of the substrate is roughened by unevenness of several μm to several tens of μm in order to secure the adhesion strength between the conductor pattern and the substrate. Not only is the surface roughened, but the opposite surface, the surface side, is also affected and roughened. As a result, the electric resistance is at least 30% at the surface portion within the skin depth within the skin depth from the surface where the current substantially flows at high frequency.
To about 60%. In addition, a gold thin film is formed on the surface of the conductor pattern for wire bonding to the conductor pattern. At that time, since a nickel film is formed to a thickness of several μm on the base of the gold thin film, a skin portion effective for high frequencies is formed. Of the nickel film is dominated by the large electric resistance of the nickel film, and further increases due to the roughening of the surface.

【0006】これ等の要因により、従来の集積化インダ
クタでは、導体の主要部は低抵抗の金属が用いられてい
るに拘らず、上記の課題が生じていた。
Due to these factors, in the conventional integrated inductor, the above-mentioned problem occurs even though the main portion of the conductor is made of a metal having a low resistance.

【0007】本発明の目的は上記課題を解決するため、
導体パターンと基板の間の付着強度を確保しつつ高周波
で有効な表面から表皮深さ以内における電気抵抗を十分
に低くし、Qの高く、損失の小さな集積化インダクタを
可能とすることであり、これにより、モジュール化され
た弾性表面波装置を小形かつ低損失とし、これを用いた
移動体通信機器を小型化、高性能化を図ることにある。
The object of the present invention is to solve the above problems.
(EN) It is possible to secure an adhesion strength between a conductor pattern and a substrate, sufficiently lower the electric resistance within a skin depth from a surface effective at high frequencies, and to enable an integrated inductor having a high Q and a low loss. As a result, the modularized surface acoustic wave device is downsized and has low loss, and the mobile communication device using the device is downsized and the performance is improved.

【0008】[0008]

【課題を解決するための手段】上記の目的を達成するた
めに、本発明ではスパイラル状の導体パターンをその表
面を平滑なものとして絶縁体基板に埋め込み、スパイラ
ルの一主面のみを露出させた。更に、その際、導体を基
板中に入って行く程、導体幅を太くなるようにすると共
に、導体の基板法線方向の厚さを増し、導体幅程度乃至
それ以上に厚くしている。基板の絶縁体としてはスパイ
ラル状の厚い導体パターンを埋め込み易い樹脂とし、し
かも誘電率の小さく、かつ、tanδも小さな樹脂を用
いることとした。
In order to achieve the above object, in the present invention, a spiral conductor pattern is embedded in an insulating substrate with its surface being smooth, and only one main surface of the spiral is exposed. . Further, at that time, the conductor width is made thicker as it goes into the substrate, and the thickness of the conductor in the substrate normal direction is increased to be about the conductor width or more. As the insulator of the substrate, a resin in which a spiral thick conductor pattern is easily embedded, a resin having a small dielectric constant and a small tan δ is used.

【0009】[0009]

【作用】上記した様に導体を基板中に入って行く程、導
体幅を太くすることにより、スパイラル状導体は外力に
より基板から脱離し難くなる、換言すると導体パターン
の基板に対する付着強度が大幅に高まる。これにより、
基板上に単にスパイラル状導体パターンを形成する従来
の技術において付着強度を確保するため必要とした基板
表面の粗面化を避けることができる。また、これによ
り、基板に単にスパイラル状導体パターンを埋め込む場
合に必要とした導体表面の粗面化も避けることができ
る。その結果、表面の平滑なスパイラル状導体パターン
を形成でき、かつ、その厚さを導体幅程度乃至それ以上
に厚くすることができる。即ち、スパイラル状導体の断
面における周囲長を長くとれ、表面が平滑となるので、
高周波に於ける電気抵抗を十分に低下させることがで
き、集積化インダクタのQ値を十分に大きくすることが
できる。
As described above, by increasing the conductor width as the conductor gets into the board, the spiral conductor becomes difficult to be detached from the board by an external force. In other words, the adhesion strength of the conductor pattern to the board is greatly increased. Increase. This allows
It is possible to avoid the roughening of the surface of the substrate, which is required to secure the adhesive strength in the conventional technique of simply forming the spiral conductor pattern on the substrate. In addition, this also makes it possible to avoid the roughening of the conductor surface, which is required when the spiral conductor pattern is simply embedded in the substrate. As a result, a spiral conductor pattern having a smooth surface can be formed, and the thickness can be increased to about the conductor width or more. That is, since the peripheral length in the cross section of the spiral conductor can be increased and the surface becomes smooth,
The electric resistance at high frequencies can be sufficiently reduced, and the Q value of the integrated inductor can be sufficiently increased.

【0010】上記の様に導体の表面を平滑とでき、かつ
厚さを導体幅程度乃至それ以上に厚くすることができる
ので、スパイラル状導体の高周波電気抵抗を低く押さえ
た状態で、導体幅を細くすることができ、その結果、集
積化インダクタの占有面積を小さく、即ち、小型とでき
る。
As described above, since the surface of the conductor can be made smooth and the thickness can be increased to about the conductor width or more, the conductor width can be reduced while the high frequency electric resistance of the spiral conductor is kept low. It can be made thin, and as a result, the area occupied by the integrated inductor can be made small, that is, can be made small.

【0011】基板を樹脂とすることでスパイラル状導体
を埋め込み易くでき、しかも、誘電率とtanδの小さ
な樹脂を用いることにより、インダクタとしての自己共
振周波数を十分に高く、かつ損失も小さくできるので、
高周波に於けるQを大きなものとすることができる。
By using a resin as the substrate, the spiral conductor can be easily embedded, and by using a resin having a small dielectric constant and tan δ, the self-resonant frequency as an inductor can be sufficiently high and the loss can be reduced.
The Q at high frequency can be increased.

【0012】[0012]

【実施例】図1は本発明の集積化インダクタの好適な実
施例を示す断面模式図、図2は図1の実施例の平面図で
ある。
1 is a schematic sectional view showing a preferred embodiment of an integrated inductor of the present invention, and FIG. 2 is a plan view of the embodiment shown in FIG.

【0013】図1、2において、1は導体であって、そ
の一表面は絶縁体基板2の表面と略同一平面となって、
角形スパイラル状のコイルを形成している。また、図1
に示されるように導体1の断面は略矩形を成しており、
その殆どの場所でその幅が基板2の中に入るほど太くな
っている。しかも、導体1の表面は平滑となっている。
また、図2に見る様にスパイラルの両端にはボンディン
グパッド3、3’が設けられている。本実施例ではスパ
イラルの外寸1.4mm,導体幅w、間隔sはいずれも
80μm、スパイラルの巻数は1.5回、導体の厚さは
40μm,導体の材料は銅で電気メッキされたもの、基
板は高周波特性の良いBTレジンでガラス繊維入りであ
り、1GHzに於る誘電率3.45,tanδ=0.0
027と、通常用いられるガラスエポキシのFR4よ
り、誘電率、tanδ共に小さく高周波特性が良いもの
を用いている。
In FIGS. 1 and 2, 1 is a conductor, one surface of which is substantially flush with the surface of the insulating substrate 2,
A rectangular spiral coil is formed. Also, FIG.
As shown in, the conductor 1 has a substantially rectangular cross section,
In most of the places, the width is so thick that it enters the substrate 2. Moreover, the surface of the conductor 1 is smooth.
Further, as shown in FIG. 2, bonding pads 3, 3'are provided on both ends of the spiral. In this embodiment, the outer diameter of the spiral is 1.4 mm, the conductor width w and the interval s are all 80 μm, the number of turns of the spiral is 1.5 times, the thickness of the conductor is 40 μm, and the material of the conductor is electroplated with copper. The substrate is a BT resin with good high frequency characteristics and contains glass fibers. The dielectric constant at 1 GHz is 3.45, tan δ = 0.0.
027 and FR4, which is a commonly used glass epoxy, have smaller permittivity and tan δ and better high frequency characteristics.

【0014】上記実施例の集積化インダクタの作製方法
を図3のプロセスの流れ図により示す。表面の平滑な
金属版aを用意し、その一表面に厚さ40μm以上に
ホトレジスト膜bを形成し、ホトマスク、紫外光源、
を用いて露光、現像し、所定の導体パターン部分のホト
レジストを除去し、その部分の金属版表面を露出させ
る。その際、ホトレジストパターンの側壁はオーバハン
グ状あるいは直立とならぬ様に傾斜をつける。その後、
銅メッキ浴に上記ホトレジストパターンを形成した金
属版を浸し、電気メッキにより、金属版の露出部に銅の
導体パターン1をホトレジストbと略等しい厚さに形成
し、ホトレジストを剥離する。この時、金属版上には
側壁にオーバハングのある40μm厚の銅導体パターン
1が形成されている。次いで、上記金属版の銅導体パ
ターン1を形成した側に、ガラス繊維入りの半硬化BT
レジンを圧着し、加熱硬化する。この時、銅の導体1は
BTレジンの基板2に埋め込まれ、しかも、基板の中に
入る程、導体1が太くなっている。その後、金属版を
剥離して、取り去るとBTレジンの基板2に埋め込まれ
たスパイラル状の導体パターン1が完成する。この時、
基板の中に入る程、導体1が太くなっているので、金属
版を剥離する際、導体1が金属版aに付着して基板2か
ら抜け落ちる様なことは無い。そのため、導体1の表面
は平滑にすることができる。
A method of manufacturing the integrated inductor of the above embodiment will be described with reference to the process flow chart of FIG. A metal plate a having a smooth surface is prepared, and a photoresist film b having a thickness of 40 μm or more is formed on one surface of the metal plate a, and a photomask, an ultraviolet light source,
Is used for exposure and development to remove the photoresist in a predetermined conductor pattern portion to expose the metal plate surface in that portion. At this time, the sidewalls of the photoresist pattern are inclined so that they are not overhanging or upright. afterwards,
The metal plate on which the photoresist pattern is formed is immersed in a copper plating bath, and electroplating is performed to form a copper conductor pattern 1 on the exposed portion of the metal plate to a thickness substantially equal to that of the photoresist b, and the photoresist is peeled off. At this time, a 40 μm thick copper conductor pattern 1 having an overhang on the side wall is formed on the metal plate. Then, on the side of the metal plate on which the copper conductor pattern 1 is formed, a semi-cured BT containing glass fiber
The resin is pressure-bonded and heat-cured. At this time, the copper conductor 1 is embedded in the BT resin substrate 2, and the conductor 1 becomes thicker as it goes into the substrate. Then, the metal plate is peeled off and removed to complete the spiral conductor pattern 1 embedded in the substrate 2 of BT resin. At this time,
Since the conductor 1 becomes thicker as it enters the substrate, the conductor 1 does not stick to the metal plate a and fall off the substrate 2 when the metal plate is peeled off. Therefore, the surface of the conductor 1 can be made smooth.

【0015】この後、ボンディングパッド部分3、3’
を除き、基板1上をメッキレジスト4で覆い、ボンディ
ングパッド3、3’上のみにNiメッキ、次いで金メッ
キを施し、集積化インダクタが完成する。
After this, the bonding pad portions 3, 3 '
Except for the above, the substrate 1 is covered with the plating resist 4, and only the bonding pads 3 and 3 ′ are plated with Ni and then with gold to complete the integrated inductor.

【0016】図3に示す上記の方法で作製された本実施
例の集積化インダクタのインダクタンス値L,高周波抵
抗値R,Q値を表1に示す。尚、表1には同一の平面寸
法の従来例に於けるL,R,Qの値も比較のため示す。
この従来例では基板2’には誘電率9.4のアルミナセ
ラミックが用いられ、導体パターン1’は基板上に所謂
サブトラクト法により基板側から順に銅、Ni,金の膜
を無電解メッキで形成した後、ホトエッチングによっ
て、不要部を除き形成されたものを用いている。導体の
厚さは10μmである。従来例での導体部の断面図を図
4に示すが、アルミナセラミック基板の表面はその凹凸
が約10μmと粗面化されており、その影響で導体表面
は全体的に同様の凹凸の粗面となっている。この粗面化
は材料自身に起因するだけでなく、付着強度を確保する
意味もある。また、導体パターンはサブトラクト法で作
製されているため、ウエットエッチングの際のアンダー
カットにより導体幅が細くなり、その減少分は略導体厚
乃至その2倍にもなる。そのため、及び導体の厚さが厚
くなると基板から剥離しやすくなるため、導体の厚さは
10μm程度におさえられている。
Table 1 shows the inductance value L, the high frequency resistance values R, and Q values of the integrated inductor of this embodiment produced by the above method shown in FIG. Table 1 also shows the values of L, R and Q in the conventional example having the same plane size for comparison.
In this conventional example, an alumina ceramic having a dielectric constant of 9.4 is used for the substrate 2 ', and the conductor pattern 1'is formed on the substrate by a so-called subtract method in the order of copper, Ni, and gold by electroless plating. After that, the one formed by removing the unnecessary portion by photoetching is used. The thickness of the conductor is 10 μm. FIG. 4 shows a cross-sectional view of the conductor portion in the conventional example. The surface of the alumina ceramic substrate has a roughened surface with a roughness of about 10 μm. Has become. This roughening is not only caused by the material itself, but also has the meaning of ensuring adhesive strength. Further, since the conductor pattern is produced by the subtract method, the conductor width becomes thin due to undercutting during the wet etching, and the reduction amount becomes approximately the conductor thickness or twice the conductor thickness. Therefore, and as the thickness of the conductor becomes thicker, the conductor is easily separated from the substrate. Therefore, the thickness of the conductor is suppressed to about 10 μm.

【0017】[0017]

【表1】 [Table 1]

【0018】上記の表1に示す様に、本実施例の周波数
1GHzにおけるL,R,Qはそれぞれ、L=5.4n
H,R=0.25Ω,Q=120で、従来例のL=6.
2nH,R=1.14Ω,Q=31に比較して、特に高
周波の抵抗Rが1/4以下と小さく、Qが4倍程度に大
きくなる効果が得られた。尚、測定の際のボンディング
ワイヤの影響は補正してある。本実施例におけるこの様
に大きなQの改善効果は、導体表面を十分に平滑とし、
しかも導体の厚さを厚くして導体の表皮部分の断面積
(導体の断面積中、表面から表皮深さ迄の部分の面積)
を広くとり、かつ導体の表面近傍に例えばNiの如き比
抵抗の大きな金属膜を設けなかったことに由来し、補助
的な要因としては基板に誘電率εが小さく、かつtan
δも小さな樹脂を用いて自己共振周波数の低下を避けた
ことにある。
As shown in Table 1 above, L, R, and Q at a frequency of 1 GHz in this embodiment are L = 5.4n, respectively.
H, R = 0.25Ω, Q = 120, L = 6.
Compared with 2 nH, R = 1.14Ω, and Q = 31, the effect that the resistance R of the high frequency is small, that is, ¼ or less, and Q is increased to about 4 times is obtained. The influence of the bonding wire during the measurement is corrected. Such a large Q improving effect in the present embodiment makes the conductor surface sufficiently smooth,
Moreover, by increasing the thickness of the conductor, the cross-sectional area of the skin portion of the conductor (the area from the surface to the skin depth in the cross-sectional area of the conductor)
And the fact that a metal film having a large specific resistance, such as Ni, is not provided near the surface of the conductor.
δ is because a resin having a small value is used to avoid a decrease in the self-resonant frequency.

【0019】さらに、上記の様に導体表面を平滑とし、
かつ導体の厚さを厚くできた理由は、基板の中に入る
程、導体幅を太くして基板中に埋め込み、導体と基板と
の付着強度を強化したことにある。
Further, the conductor surface is smoothed as described above,
Moreover, the reason why the conductor can be made thicker is that the conductor width is made thicker as it gets into the substrate and embedded in the substrate, so that the adhesion strength between the conductor and the substrate is enhanced.

【0020】上記の実施例では導体は一つの面を残して
基板中に埋め込まれているが、一部分が埋め込まれた状
態であっても差し支えない。さらに、上記実施例では図
1に示される様に、導体1の幅は殆どの部分で基板の中
に入る程太くなっているが、一部分でも基板の中に入る
程、太くなっている箇所が有ればよい。
In the above embodiment, the conductor is embedded in the substrate leaving one surface, but it may be partially embedded. Furthermore, in the above-described embodiment, as shown in FIG. 1, the width of the conductor 1 is thicker so that the conductor 1 is almost entirely inside the substrate. I just have to.

【0021】上記の実施例では導体に銅を用いたが、本
発明はそれに限られず、金、あるいは銀をメッキして用
いてもよい。導体を金とした場合は価格はやや高いが、
ボンディングパッド部にNi、金を着ける必要はなく、
メッキレジストも用いずに済む。
Although copper is used for the conductor in the above embodiment, the present invention is not limited to this, and gold or silver may be plated and used. If the conductor is gold, the price is a little high,
It is not necessary to wear Ni or gold on the bonding pad,
No plating resist is required.

【0022】また、上記の実施例では、導体幅及び間隔
を80μmとしているが、40乃至50μmにでき、ス
パイラルの巻数を多くすることにより、外形寸法が1m
m以下で、上記実施例と同程度のL値を持ち約100の
Q値を有する集積化インダクタが実現できる。
Further, in the above embodiment, the conductor width and interval are set to 80 μm, but they can be set to 40 to 50 μm, and by increasing the number of spiral turns, the external dimension is 1 m.
An integrated inductor having an L value similar to that of the above embodiment and a Q value of about 100 can be realized at m or less.

【0023】本発明による集積化インダクタを用いた弾
性表面波装置(SAWデバイス)の実施例を模式的な斜
視図として図5に示す。本図ではセルラー無線端末に用
いる小形のSAW分波器が構成され、送信側のSAWフ
ィルタのチップ11とその要素電極間の結合用整合用の
各種集積化インダクタを埋め込んで積載したチップ1
2、及び受信側のSAWチップ13とその要素電極間の
結合用整合用の各種インダクタを埋め込んで積載したチ
ップ14がセラミックのLead−lessChip
Carrier(LCC)タイプの表面実装パッケージ
(SMP)15に搭載されている。尚本図ではパッケー
ジの金属キャップは省略して描かれている。各種のイン
ダクタを積載したチップ12、14の短辺は1.6mm
乃至1mm程度に押えられるので、800MHz帯のS
AW分波器でも、SMPの外寸は13.6mm×6.6
mm×1.6mmと占有面積0.9cm2、体積0.1
5cm3と誘電体共振器を用いた分波器より、占有面積
で約1/2.5,体積で約1/5と小形化の利点を維持
することができる。重量の点では0.5gと誘電体共振
器を用いた分波器の1/5以下と軽量化できる。また、
ボンディングワイヤの長さを最小にする設計も併用し
て、高Q集積化インダクタの利点を十分に活かし、送信
受信各フィルタの損失を最小限に押えることができる。
FIG. 5 is a schematic perspective view showing an embodiment of a surface acoustic wave device (SAW device) using the integrated inductor according to the present invention. In this figure, a small-sized SAW demultiplexer used in a cellular radio terminal is configured, and a chip 1 is mounted by embedding various integrated inductors for matching for coupling between a chip 11 of a SAW filter on the transmission side and its element electrodes.
2, and a chip 14 in which various inductors for matching for coupling between the SAW chip 13 on the receiving side and its element electrodes are embedded and mounted is a lead-less chip of ceramic.
It is mounted on a carrier (LCC) type surface mount package (SMP) 15. The metal cap of the package is omitted in this figure. The short sides of chips 12 and 14 loaded with various inductors are 1.6 mm.
Since it is pressed down to about 1 mm, S of 800MHz band
Even with the AW duplexer, the outer dimensions of SMP are 13.6 mm x 6.6.
mm × 1.6 mm, occupied area 0.9 cm 2 , volume 0.1
It is possible to maintain the advantages of miniaturization of about 1 / 2.5 in occupied area and about 1/5 in volume compared to a duplexer using a dielectric resonator of 5 cm 3 . In terms of weight, the weight can be reduced to 0.5 g, which is 1/5 or less of that of a duplexer using a dielectric resonator. Also,
Along with a design that minimizes the length of the bonding wire, the advantages of the high Q integrated inductor can be fully utilized and the loss of each of the transmitting and receiving filters can be suppressed to the minimum.

【0024】[0024]

【発明の効果】本発明により、基板からの剥離の惧れ無
く表面の平滑で厚い、しかも幅が比較的に細いスパイラ
ル状の導体パターンが形成できることから、Qが高く、
小形の集積化インダクタが量産できる。そのため、高周
波電子回路の高性能化、小形化が可能となる。特に、弾
性表面波装置の高性能化、小形軽量化、モジュール化が
容易となる。その結果、SAW分波器モジュールを用い
て移動無線端末が小形軽量化できる。
According to the present invention, a spiral conductor pattern having a smooth and thick surface and a relatively narrow width can be formed without fear of peeling from the substrate.
Mass production of small integrated inductors. Therefore, the high-performance electronic circuit can be improved in performance and miniaturized. In particular, it becomes easy to improve the performance of the surface acoustic wave device, reduce its size and weight, and modularize it. As a result, the mobile wireless terminal can be made compact and lightweight by using the SAW duplexer module.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明による集積化インダクタの断面図であ
る。
1 is a cross-sectional view of an integrated inductor according to the present invention.

【図2】本発明による集積化インダクタの平面図であ
る。
FIG. 2 is a plan view of an integrated inductor according to the present invention.

【図3】本発明による集積化インダクタの作製方法を示
すプロセスの流れ図である。
FIG. 3 is a process flow chart showing a method for manufacturing an integrated inductor according to the present invention.

【図4】従来例による集積化インダクタの導体部の断面
図である。
FIG. 4 is a sectional view of a conductor portion of an integrated inductor according to a conventional example.

【図5】本発明による集積化インダクタを用いた弾性表
面波装置の実施例を示す模式的斜視図である。
FIG. 5 is a schematic perspective view showing an embodiment of a surface acoustic wave device using an integrated inductor according to the present invention.

【符号の説明】[Explanation of symbols]

1…導体、 2…絶縁体基板、 3、3’…ボンディングパッド、 4…メッキレジスト、 1’…導体(従来例)、 2’…絶縁体基板(従来例)、 11…送信側SAWフィルタのチップ、 12…送信側の各種集積化インダクタを埋め込み積載し
たチップ、 13…受信側のSAWフィルタのチップ、 14…受信側の各種集積化インダクタを埋め込み積載し
たチップ、 15…LCCタイプの表面実装パッケージ、 a…金属版、 b…ホトレジスト膜。
1 ... Conductor, 2 ... Insulator substrate, 3, 3 '... Bonding pad, 4 ... Plating resist, 1' ... Conductor (conventional example), 2 '... Insulator substrate (conventional example), 11 ... Transmit side SAW filter Chips, 12 ... Chips embedded with various integrated inductors on the transmitting side, 13 ... Chips of SAW filter on the receiving side, 14 ... Chips embedded with various integrated inductors on the receiving side, 15 ... Surface mount package of LCC type , A ... Metal plate, b ... Photoresist film.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 小川 誠一 神奈川県横浜市戸塚区吉田町292番地株式 会社日立製作所AV機器事業部内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Seiichi Ogawa 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Stock company Hitachi Ltd. AV equipment division

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】導体インダクタを絶縁体からなる基板中に
埋め込み、かつ該導体インダクタが、断面の少なくとも
一部において、その幅が上記絶縁体の中側に入るほど太
くなることを特徴とした集積化インダクタ。
1. An integrated circuit characterized in that a conductor inductor is embedded in a substrate made of an insulator, and the conductor inductor is thicker in at least a part of its cross section such that its width becomes closer to the inside of the insulator. Inductor.
【請求項2】表面を平滑とした導体を主要部に用いたこ
とを特徴とした請求項1記載の集積化インダクタ。
2. The integrated inductor according to claim 1, wherein a conductor having a smooth surface is used for a main part.
【請求項3】導体の厚さが幅の約1/2以上であること
を特徴とした請求項2記載の集積化インダクタ。
3. The integrated inductor according to claim 2, wherein the thickness of the conductor is about ½ or more of the width.
【請求項4】ボンディングパッド部のみにワイヤボンデ
ィング用金属膜を付加したことを特徴とした請求項1、
2又は3記載の集積化インダクタ。
4. A wire bonding metal film is added only to the bonding pad portion.
The integrated inductor according to 2 or 3.
【請求項5】基板から露出した導体部分をボンディング
パッド部分を除いて樹脂膜で覆ったことを特徴とした請
求項1、2、3又は4記載の集積化インダクタ。
5. The integrated inductor according to claim 1, wherein the conductor portion exposed from the substrate is covered with a resin film except for the bonding pad portion.
【請求項6】絶縁体からなる基板として高周波で誘電
率、tanδの低い樹脂を主体に用いたことを特徴とし
た請求項1、2、3、4又は5記載の集積化インダク
タ。
6. The integrated inductor according to claim 1, wherein a resin having a low dielectric constant and tan δ at a high frequency is mainly used as the substrate made of an insulating material.
【請求項7】請求項1、2、3、4、5又は6記載の集
積化インダクタを整合素子あるいは結合素子として用い
たことを特徴とした弾性表面波装置。
7. A surface acoustic wave device using the integrated inductor according to claim 1, 2, 3, 4, 5 or 6 as a matching element or a coupling element.
JP5217197A 1993-09-01 1993-09-01 Integrated inductor and surface acoustic wave device using the same Pending JPH0774023A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5217197A JPH0774023A (en) 1993-09-01 1993-09-01 Integrated inductor and surface acoustic wave device using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5217197A JPH0774023A (en) 1993-09-01 1993-09-01 Integrated inductor and surface acoustic wave device using the same

Publications (1)

Publication Number Publication Date
JPH0774023A true JPH0774023A (en) 1995-03-17

Family

ID=16700388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5217197A Pending JPH0774023A (en) 1993-09-01 1993-09-01 Integrated inductor and surface acoustic wave device using the same

Country Status (1)

Country Link
JP (1) JPH0774023A (en)

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US6131041A (en) * 1996-10-11 2000-10-10 Matsushita Electric Industrial Co., Ltd. Wireless terminal equipment including electric component having conductor film formed on insulative base
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US6131041A (en) * 1996-10-11 2000-10-10 Matsushita Electric Industrial Co., Ltd. Wireless terminal equipment including electric component having conductor film formed on insulative base
US6609009B1 (en) 1999-04-26 2003-08-19 Matsushita Electric Industrial Co., Ltd. Electronic component and radio terminal using the same
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US6992556B2 (en) 2001-03-08 2006-01-31 Matsushita Electric Industrial Co., Ltd. Inductor part, and method of producing the same
EP1247729A2 (en) 2001-04-06 2002-10-09 Honda Giken Kogyo Kabushiki Kaisha Steering damper device
JP2002302085A (en) * 2001-04-06 2002-10-15 Honda Motor Co Ltd Steering damper device
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US6705631B2 (en) 2001-05-25 2004-03-16 Honda Giken Kogyo Kabushiki Kaisha Steering damper system for vehicles
DE10238767B4 (en) * 2001-09-07 2008-06-05 Honda Giken Kogyo K.K. Steering damper device
EP1298049A2 (en) 2001-10-01 2003-04-02 Honda Giken Kogyo Kabushiki Kaisha Steering damper for saddle-type vehicle
US6726232B2 (en) 2001-10-01 2004-04-27 Honda Giken Kogyo Kabushiki Kaisha Steering damper for saddle-type vehicle
US7267350B2 (en) 2003-05-28 2007-09-11 Honda Motor Co., Ltd Steering damper
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