JPH08124846A - Treatment method and device - Google Patents

Abstract

PURPOSE: To prevent treatment liquid from reaching the rear side of a work so as to enhance a treatment device in treatment efficiency. CONSTITUTION: A treatment device is equipped with a spin chuck 21 which spins and holds a semiconductor wafer W, a treatment liquid supply nozzle 3 which supplies a developing liquid L to the surface of the semiconductor wafer W, a first and a second cleaning liquid spray nozzle, 31 and 32, which spray rinsing liquid R against the front and rear of the semiconductor wafer W respectively, and a cylindrical wall 24 which is arranged at a site adjacent to the rear peripheral part of the wafer W, wherein the top face 24a of the cylindrical wall 24 is set as wide as 5 to 15mm. By this setup, a liquid film of rinsing liquid R is capable of being formed between the peripheral part of the semiconductor wafer W and the top face 24a of the cylindrical wall 24 before a developing treatment is carried out, so that the developing liquid L is prevented from reaching to the rear of the wafer W by the liquid film.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing method and a processing apparatus for supplying a processing liquid to the surface of an object to be processed to process the surface of the object.

[0002]

2. Description of the Related Art Generally, in a semiconductor device manufacturing process, a circuit pattern is reduced on a surface of an object to be processed such as a semiconductor wafer (hereinafter referred to as a wafer) by using a photolithography technique, and transferred onto a photoresist. Is being developed.

In the case of performing the developing process, the wafer is attracted and held by a spin chuck which is a rotation holding means, and the developing solution is supplied to the surface of the wafer while rotating the wafer in the horizontal direction to perform the developing process. In this case, a method is known in which a cleaning solution is sprayed on the back surface of the wafer in order to prevent the developer from flowing around the back surface of the wafer and adhering to the wafer, and preventing the development solution from entering the rotating portion of the spin chuck. (JP-A-55-11311, JP-A-57-14747)
No. 8, etc.).

Further, the top surface of the cylindrical wall, which is substantially concentric with the center of rotation of the wafer, is opposed to the peripheral edge of the back surface of the wafer with a minute gap, and the developer flowing from the peripheral edge of the wafer toward the rear surface is capillarized in the gap. There is known a method of holding the developer by a phenomenon to prevent the developer from further entering inward (see Japanese Patent Publication No. 3-34207).

[0005]

However, the former, that is, JP-A-55-11311 and JP-A-57-1.
In the technique described in Japanese Patent No. 47478, it is necessary to continuously spray the cleaning liquid or the like onto the entire back surface of the wafer in order to prevent the backing of the processing liquid. Therefore, in the case of exposing a pattern to the photoresist applied on the surface of the wafer and developing it, the developing solution must be continuously supplied to the wafer while maintaining the developing temperature at a desired value. Depending on the temperature of the cleaning liquid that is continuously sprayed on the bottom surface of
There is a problem that the temperature of the wafer is changed and the temperature of the developing solution is changed to cause unevenness in the developing process.

The latter, that is, the technique disclosed in Japanese Examined Patent Publication No. 3-34207, can prevent the backing from the back surface of the wafer and the top surface of the cylindrical wall by bringing them closer to each other. The cylindrical wall may rub,
There are problems that particles are generated and adhere to the wafer to reduce the yield of the wafer, and further, the wafer is damaged.

The present invention has been made in view of the above circumstances, and a processing method for preventing the processing liquid from entering the inside of the rear surface of the object to be processed so as to improve the processing efficiency and the product yield. And a processing apparatus.

[0008]

In order to achieve the above object, the first treatment method of the present invention provides a treatment liquid by supplying a treatment liquid to the surface of the treatment target held by the rotation holding means. Assuming a treatment method for treating the surface of the object, before supplying the treatment liquid to the surface of the object to be treated, between the back surface peripheral portion of the object to be treated and the top surface of the cylindrical wall close to the back surface of the object to be treated. It is characterized in that a liquid film of the cleaning liquid is formed on (1).

The second processing method of the present invention, like the first processing method described above, supplies the processing liquid to the surface of the object to be processed held by the rotation holding means to thereby provide the surface of the object to be processed. On the premise of the processing method for treating, the step of forming a liquid film of the cleaning liquid between the back surface peripheral portion of the object to be processed and the top surface of the cylindrical wall adjacent to the back surface of the object to be processed, and the object to be processed The method includes a step of supplying a treatment liquid to the front surface, a step of rotating the object to be treated to diffuse the treatment liquid over the entire surface of the object to be treated, and a step of supplying a cleaning liquid to the peripheral portions of the front surface and the back surface of the object to be treated. It is characterized by (claim 2).

In the third processing method of the present invention, as in the first and second processing methods, the processing liquid is supplied to the surface of the object to be processed which is held by the rotation holding means. Assuming a treatment method for treating the surface of the body, the step of forming a liquid film of the cleaning liquid between the back surface peripheral portion of the object to be treated and the top surface of the cylindrical wall close to the back surface of the object to be treated; A step of supplying a treatment liquid to the surface of the treatment object; a step of keeping the treatment object stationary; a process atmosphere being maintained in a vapor atmosphere of the treatment solution; And a step of supplying a cleaning liquid to the peripheral portions of the front surface and the back surface of the processing body (claim 3).

In the above processing method, the cleaning liquid is supplied between the back surface peripheral edge of the object to be processed and the top surface of the cylindrical wall while rotating the object to be processed, whereby the back surface peripheral edge of the object to be processed and the cylindrical wall. It is possible to form a liquid film of the cleaning liquid with the top surface of the.

Further, it is preferable to form a liquid film of the cleaning liquid having a width of 5 to 15 mm between the peripheral portion of the back surface of the object to be processed and the top surface of the cylindrical wall adjacent to the back surface of the object to be processed. 4). Further, it is preferable that the distance between the peripheral portion of the back surface of the object to be processed and the top surface of the cylindrical wall adjacent to the back surface of the object to be processed is 0.5 to 1.5 mm (claim 5).

A first processing apparatus of the present invention comprises a rotation holding means for rotating an object to be processed, a processing liquid supply means for supplying a processing liquid to the surface of the object, and a cleaning liquid on the front and back surfaces of the object. Based on the premise of a processing apparatus including a cleaning liquid supply means for supplying the cleaning liquid and a cylindrical wall arranged in a region close to the back surface peripheral edge side of the object to be processed, the width of the top surface of the cylindrical wall is 5 to 15
It is characterized in that it is formed in mm (claim 6).

The second processing apparatus according to the present invention, like the first processing apparatus, has a rotation holding means for rotating the object to be processed and a processing solution supply for supplying the processing solution to the surface of the object. And a cleaning liquid supply means for supplying a cleaning liquid to the front and back surfaces of the object to be processed, and a cylindrical wall arranged in a region close to the peripheral edge of the rear surface of the object to be processed, The width of the top surface of the wall is formed to be 5 to 15 mm, and the distance between the back surface of the object to be processed and the top surface of the cylindrical wall is 0.5 to.
It is characterized in that it is 1.5 mm (Claim 7).

In the processing apparatus of the present invention, the top surface of the cylindrical wall may be a flat surface, or an uneven line may be formed on the top surface of the cylindrical wall (Claim 8). You may form a recessed part in the top surface (claim 9). Furthermore,
The top surface of the cylindrical wall may be an inclined surface having a downward slope toward the outer periphery (claim 10).

Further, the third processing apparatus of the present invention comprises a rotation holding means for rotating the object to be processed, a processing liquid supply means for supplying the processing liquid to the surface of the object, and a peripheral portion of the back surface of the object. A plurality of substantially V-shaped concave lines on the top surface of the cylindrical wall, the outer peripheral side wall of which is inclined in the outer peripheral direction with respect to the inner peripheral side wall. It is characterized in that a portion is formed (claim 1
1).

The fourth processing apparatus of the present invention, like the third processing apparatus, has a rotation holding means for rotating the object to be processed, and a processing solution supply means for supplying the processing solution to the surface of the object. On the premise of a processing apparatus having a cylindrical wall arranged in a region close to the peripheral edge of the back surface of the object to be processed, a concave groove is formed on the top surface of the cylindrical wall, and the inside and outside of the concave groove are formed. The invention is characterized in that an inner wall layer and an outer wall layer each having a plurality of concavo-convex stripes are formed on the peripheral side (claim 12). In this case, the shapes of the uneven lines of the inner wall layer and the outer wall layer may be arbitrary, but it is preferable that the concave line portion is a substantially V-shaped groove in which the outer peripheral side wall is inclined in the outer peripheral direction with respect to the inner peripheral side wall ( Claim 13). Further, it is preferable to provide a drainage port at the bottom of the groove (claim 14).

According to the inventions of claims 1 to 10,
In supplying the processing liquid to the surface of the object to be processed held by the rotation holding means to process the surface of the object to be processed, before supplying the processing liquid to the surface of the object to be processed, By forming a liquid film of the cleaning liquid between the peripheral portion of the back surface and the top surface of the cylindrical wall close to the back surface of the object to be processed, the processing liquid is supplied to the surface of the object to be processed and diffused to the surface during the processing step. Even if the back surface of the object to be processed wraps around, it can be prevented by the liquid film of the cleaning liquid. Further, since the liquid film is formed by the cleaning liquid, it can be used for cleaning the back surface of the object to be processed together with the cleaning liquid used in the cleaning step after the treatment.

According to the eleventh aspect of the present invention, a plurality of substantially V-shaped concave lines are formed on the top surface of the cylindrical wall so that the outer peripheral side wall inclines in the outer peripheral direction with respect to the inner peripheral side wall. Occasionally, the inner peripheral side wall can prevent the processing liquid from wrapping around around the back surface of the object to be processed, and by increasing the surface area of the top surface of the cylindrical wall, the cylindrical wall and the rear surface of the object can be processed. A liquid film can be easily formed between the substrate and the substrate, and the liquid film can suppress the invasion of the processing liquid into the inner side of the rear surface of the target object. Further, when the processing liquid after the processing is shaken off, it is possible to easily discharge the droplets to the outside by utilizing the inclination of the outer peripheral side wall of the concave line.

Further, according to the processing apparatus of the twelfth aspect, the inner wall layer and the outer wall layer each having a plurality of concave and convex lines on the inner and outer peripheral sides with respect to the concave groove are formed on the top surface of the cylindrical wall. First, the outer wall layer prevents the processing solution from entering the back of the body and the processing solution that passes through the outer wall layer can be blocked by the groove and the inner wall layer. You can In this case, before supplying the processing liquid, a liquid film of the cleaning liquid may be formed in advance between the top surface of the inner wall layer and the peripheral portion of the back surface of the object to be processed.

[0021]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below in detail with reference to the drawings. Here, a case will be described in which the processing apparatus of the present invention is applied to a developing apparatus incorporated into a semiconductor wafer coating / developing processing system and used.

As shown in FIG. 1, the semiconductor wafer coating / developing processing system 1 has a plurality of cassettes 2 for accommodating, for example, a large number of semiconductor wafers W (hereinafter referred to as wafers) as objects to be processed at one end thereof. For example, it has a carrier station 3 configured to be able to carry four wafers, and an auxiliary arm 4 for loading / unloading the wafer W and positioning the wafer W is provided at the center of the carrier station 3. In addition, a main arm 5 is provided in the central portion of the coating / development processing system 1 so as to be movable in the length direction thereof, and a main arm 5 for transferring the wafer W from the auxiliary arm 4 is provided. Various processing mechanisms are arranged on both sides of the road. Specifically, as the processing mechanism, as a process station 6, a brush scrubber 7 for brush cleaning the wafer W and a high-pressure jet cleaning for cleaning with high-pressure jet water are provided on the side of the carrier station 3 side. Machines 7A are arranged in parallel, two heating devices 9 are stacked next to each other, and two developing devices 8 which are the processing devices of the present invention are arranged on the opposite side of the transfer path of the main arm 5. It is set up.

Further, on the side of the process station 6, as another process station 6A via the connection unit 10, for example, an adhesion processing device 11 for performing a hydrophobic treatment on the wafer W before applying the photoresist to the photoresist. Is provided, and the cooling device 12 is disposed below this. On the side of these devices 11 and 12, two heating devices 9 are arranged in two rows.

Two resist coating devices 13 for coating the photoresist liquid on the wafer W are provided in parallel on the opposite side of the heating device 9 and the adhesion processing device 11 with the transfer path of the main arm 5 interposed therebetween. . Although not shown, an exposure device for exposing a predetermined fine pattern on the resist film via an interface unit is provided on the side of these resist coating devices 13.

The developing device 8 of the present invention incorporated in the coating / developing processing system 1 configured as described above is shown in FIG.
As shown in FIG.
And a spin chuck 21 as a rotation holding means for adsorbing and holding the wafer W in a horizontal state, and a developing solution L supplied from a supply source 22 of a developing solution as a processing solution located above the spin chuck 21 to the wafer. And a processing liquid supply nozzle 23 as a processing liquid supply means for supplying the processing liquid to the front surface (upper surface) of W. A cylindrical wall 24 having a flat top surface 24a having a thickness (width) A of the cylindrical portion for preventing invasion of about 5 to 15 mm is provided around (see FIG. 3). The cylindrical wall 24 is formed of a member having water resistance and corrosion resistance, such as vinyl chloride or ceramics. The diameter of the cylindrical wall 24 in the outer diameter direction is such that the diameter of the top surface 24a is about 10 mm inside the diameter of the wafer W, that is, inside the orientation flat of the wafer W, for example. Further, the top surface 24a of the cylindrical wall 24 and the back surface of the wafer W are arranged so that the facing distance B is about 0.5 to 1.5 mm (see FIG. 3).

The processing container 20 includes a spin chuck 21.
And a cylindrical outer container 25 with a bottom that surrounds the outer periphery of the wafer W held by the spin chuck 21, and an inner container 26 arranged below the wafer W. The cylindrical wall 24 is provided around the upper surface. In this case, the processing container 20 is provided with bolts (not shown) in the mounting holes 24d of the four mounting portions 24c provided in the circumferential direction of the flange portion 24b projecting outward from the lower portion of the cylindrical wall 24.
It is fixed to the upper surface side of the inner container 26 (see FIG. 3). An exhaust port 28 connected to the exhaust pump 27 is provided at the bottom of the processing container 20, and a drain port 29 connected to a drain device (not shown) is provided.

On the other hand, above the spin chuck 21, there is disposed a first cleaning liquid jet nozzle 31 as a cleaning liquid supply means connected to a supply source 30 of a rinse liquid R as a cleaning liquid, and a cylindrical wall 24. A plurality of, for example, four second cleaning liquid injection nozzles 32 for injecting the rinse liquid toward the peripheral portion of the back surface of the wafer W are provided on the inner side of. The injection port (not shown) of the second cleaning liquid injection nozzle 32 is provided so as to inject the rinse liquid between the top surface 24a of the cylindrical wall 24 and the peripheral portion of the back surface of the wafer W. Two
The rinse liquid R is sprayed from the cleaning liquid spraying nozzle 32, and the spin chuck 21 is driven to rotate the wafer W, so that the capillary phenomenon is generated between the peripheral edge of the back surface of the wafer W and the top surface 24 a of the cylindrical wall 24. By this, a liquid film (liquid pool) of the rinse liquid R is formed.

Further, the drive motor 33 of the spin chuck 21, the lifting mechanism 34, the developing solution supply source 22, the processing solution supply nozzle 23, the rinse solution supply source 30, and the first and second cleaning solution injection nozzles 31, 32 are Each of them is connected to a control unit 35 for controlling the number of revolutions, the elevation position, the supply amount of the developing solution and the supply amount of the rinse liquid, and is configured to be capable of relative control.

The processing container 20, the spin chuck 21, the processing liquid supply nozzle 23, and the first and second cleaning liquid jet nozzles 31 and 32, which constitute the developing device 8, are disposed in the processing chamber 36.
Housed within. Further, a temperature / humidity adjusting mechanism (not shown) configured to be capable of supplying an airflow whose temperature and humidity are adjusted to predetermined set values toward the inside of the processing container 20 is arranged above the processing container 20. .

In the above embodiment, the top surface 24a of the cylindrical wall 24 is
Although the case where the rinsing liquid R is formed flat has been described, in order to more easily form the liquid film of the rinse liquid R, the following structure is preferable. That is, as shown in FIG. 4 (a), a plurality of uneven lines 24 e are provided on the top surface 24 a of the cylindrical wall 24 at appropriate intervals, or as shown in FIG. 4 (b).
For example, an arcuate recess 24f is provided on the top surface 24a of the cylindrical wall 24, or, as shown in FIG. 4C, the inclined surface 24 having a downward slope toward the outer periphery of the top surface 24a of the cylindrical wall 24.
By setting g (inclination angle θ: 1 ° to 5 °, preferably 2 °), the contact area of the top surface 24a of the cylindrical wall 24 with the rinse liquid R can be increased, and the top surface of the cylindrical wall 24 can be increased. Two
A liquid film of the rinse liquid R can be reliably formed between 4a and the peripheral portion of the back surface of the wafer W. The top surface 24a of the cylindrical wall 24 is inclined downwardly toward the outer periphery so that the liquid in the vicinity of the outer peripheral portion of the cylindrical wall 24 can easily flow down, and the developing solution that wraps around the peripheral portion of the back surface of the wafer W can be obtained. L can be positively discharged to the outside.

Next, the processing method of the present invention will be described with reference to FIG.
And FIG. 6 will be described.

First Processing Method First, the main arm 5 automatically transfers the wafer W to the spin chuck 21 and positions and holds it. Then, when the wafer W is 8 inches, it is rotated at a low speed of, for example, 10 to 100 rpm, preferably 30 to 60 rpm, and the second
The rinse liquid R is supplied from the cleaning liquid injection nozzle 32 of FIG. 1 between the top surface 24a of the cylindrical wall 24 and the peripheral portion of the back surface of the wafer W,
Prior to the supply of the developing solution L, the top surface 24 of the cylindrical wall 24 is
A liquid film of the rinse liquid R is formed between a and the peripheral portion of the back surface of the wafer W by a capillary phenomenon (see FIG. 5A).

Next, while the wafer W is rotated at a high speed of, for example, 2000 rpm, the developing solution L is supplied in a spray form from the processing liquid supply nozzle 23 to the upper surface (front surface) of the wafer W for, for example, 0.5 seconds, and then about 30 rpm. The developing solution L is supplied to the surface of the wafer W for 2 seconds while rotating at a low speed to puddle the developing solution L on the surface of the wafer W (see FIG. 5 (b)), and the developing solution L on the surface of the wafer W is surrounded by a centrifugal force. To form a developer film on the surface of the wafer W (FIG. 5).
(C)). At this time, the exhaust pump and the drainage pump are driven to discharge the exhaust gas and drainage liquid inside the processing container 20 to the outside. In this way, after the surface of the wafer W is filled with the developing solution, the rotation of the wafer W is stopped and the developing process is performed for 50 seconds, for example. Further, the temperature and humidity of this processing atmosphere are automatically controlled to predetermined set values.

At the time of this development processing, the developing solution L wraps around the back surface of the wafer W between the peripheral edge of the back surface of the wafer W and the top surface 24a of the cylindrical wall 24 due to the back rotation from the peripheral edge of the wafer W. , The peripheral edge of the back surface of the wafer W and the top surface 2 of the cylindrical wall 24
Since the liquid film of the rinse liquid R is formed between 4a and 4a,
By the action of the self-holding force of the liquid film, it is possible to prevent the developing solution L from entering the inside of the cylindrical wall 24, and the developing solution L sneaking around flows down the outer peripheral surface of the cylindrical wall 24, It collects at the bottom of the processing container 20 and is discharged to the outside through the drainage port 29.

After the above-described development processing is performed, the rinse liquid R is supplied (sprayed) from the first cleaning liquid spray nozzle 31 to the surface of the wafer W while the wafer W is rotated at 2000 rpm, for example, and the second cleaning liquid is also sprayed. The rinse liquid R is supplied (sprayed) from the spray nozzle 32 toward the peripheral portion of the back surface of the wafer W to clean the front surface and the back surface of the wafer W (FIG. 5).
(D)).

Second Processing Method First, similarly to the first processing method, the main arm 5 automatically transfers the wafer W to the spin chuck 21 and positions and holds it. Then, the wafer W is, for example, 10 to 10
The rinse liquid R is supplied from the second cleaning liquid injection nozzle 32 between the top surface 24a of the cylindrical wall 24 and the peripheral portion of the back surface of the wafer W while rotating at a low speed of 0 rpm, preferably 30 to 60 rpm, so that the developer L Prior to supply, the cylindrical wall 24
A liquid film of the rinse liquid R is formed between the top surface 24a of the wafer W and the peripheral portion of the back surface of the wafer W by a capillary phenomenon (see FIG. 6A).

Next, while the wafer W is stopped, the developing solution L is supplied to the upper surface (front surface) of the wafer W from the processing solution supply nozzle 23 in a spray form for 0.5 seconds, for example, and the developing solution L is applied to the surface of the wafer W. L is supplied (see FIG. 6B). On this occasion,
The driving of the exhaust pump and the drainage pump is stopped, and the processing atmosphere in the processing chamber 36 is maintained in the vapor atmosphere of the developing solution L for one minute, and the developing solution L is held on the surface of the wafer W by the surface tension. To form a developer film and develop the film (FIG. 6).
(C)). By thus stopping the wafer W, stopping the evacuation and the like, and performing the developing process in the vapor atmosphere of the developing solution, the developing solution L can be supplied in a uniform spray state without the generation of air flow due to the evacuation operation. Therefore, a uniform developer film can be formed. The temperature of this processing atmosphere,
The humidity is automatically controlled to a preset value.

At the time of this development processing, as in the first processing method described above, the peripheral edge of the back surface of the wafer W and the top surface 24 of the cylindrical wall 24 are formed.
While the developer L wraps around the back surface of the wafer W from the peripheral edge of the wafer W with respect to a, it is already rinsed between the peripheral edge of the back surface of the wafer W and the top surface 24 a of the cylindrical wall 24. Since the liquid film of the liquid R is formed, the action of the self-holding force of the liquid film can prevent the developing liquid L from entering the inside of the cylindrical wall 24 and prevent the developing liquid from wrapping around. The liquid L flows down on the outer peripheral surface of the cylindrical wall 24.

After the above-described developing process is performed, the rinse liquid R is supplied (sprayed) from the first cleaning liquid jet nozzle 31 to the surface of the wafer W while the wafer W is rotated at, for example, 2000 rpm, and the second cleaning liquid is also sprayed. The rinse liquid R is supplied (sprayed) from the spray nozzle 32 toward the peripheral portion of the back surface of the wafer W to clean the front surface and the back surface of the wafer W (FIG. 6).
(D)).

Next, the width A of the top surface 24a of the cylindrical wall 24
The relationship between the developing solution L and the back surface wraparound of the developing solution L, and the relationship between the back surface wraparound of the developer L and the gap B between the peripheral edge of the back surface of the wafer W and the top surface of the cylindrical wall 24 will be described based on experiments.

The width A of the top surface 24a of the cylindrical wall 24 is 5 mm to
An experiment for determining the number of wraparound occurrences at the back surface peripheral portion of the wafer W was performed under the following conditions, in place of an appropriate size within 20 mm.

* Conditions Wafer W: A 6-inch wafer was used, and a resist was applied to the surface of the wafer to have an affinity. Top surface 24a of the cylindrical wall 24: Flat top surface Gap between the back surface peripheral edge of the wafer W and the top surface 24a of the cylindrical wall 24 B: 1 mm Developer L: Surface active to make it easier to get around than the actual developer A developer containing an agent was used, and the contact angle of the back surface of the wafer W was set to 3 ° or less. Discharge conditions of the developing solution L: 1.8 Kg / cm 2, 28.0 c
c Number of processed wafers W: 15 Cleaning liquid: pure water.

An experiment was conducted under the above-mentioned conditions.
When the width A of the top surface 24a of the cylindrical wall 24 is in the range of 5 to 15 mm, the wraparound of the developing solution L can be prevented, and when the width A is in the range of 6 to 14 mm. It was possible to reduce the number of wraparound occurrences to 10 or less. Further, when the width A of the top surface 24a of the cylindrical wall 24 is within the range of 8 to 12 mm, the number of wraparound occurrences can be 6 or less,
It was found that the wraparound can be effectively prevented. When the width A is 10 mm, the number of wraparound occurrences is 5,
The number of wraparounds was the smallest. The width A is 20m
In the case of m, the number of wraparound occurrences is as small as 9, but in this case, the width A is wide, so that there is another problem that the developer L remains on the back surface of the wafer after the cleaning process after the development process.

In the above experiment, the gap B between the peripheral edge of the back surface of the wafer W and the top surface 24a of the cylindrical wall 24 is 1 mm. The gap B is in the range of 0.5 to 1.5 mm. When the same experiment was performed after changing the width, the width A was 1
4-6mm (width A is 0.5mm, width A is 14m
When the gap A is 6 mm and the width A is 6 mm, the result is almost the same as the above experimental result, and when the gap B is set as narrow as 0.67 to 1.3 mm, the width A is Is 1
5-5 mm (width A is 15 for gap B of 0.67 mm)
When the width A is 5 mm while the gap B is 1.3 mm to the gap B is 1.3 mm, almost the same result as the above experimental result was obtained.

Next, the cylindrical wall 24 of another embodiment will be described with reference to FIG. In the embodiment shown in FIG. 8, the liquid film between the top surface of the cylindrical wall 24 and the peripheral portion of the back surface of the wafer W can be formed more surely, and the inner surface of the back surface of the wafer L of the developing solution L is formed. This is a case where it is possible to suppress the invasion of the developing solution L and to accelerate the discharge of the developing solution L when the developing solution L after processing is shaken off.

That is, the uneven strip 24 shown in FIG.
Instead of e, a plurality of substantially vertical inner peripheral side walls 40a and a plurality of outer peripheral side walls 40b inclined upward from the lower end of the inner peripheral side wall 40a (2 in the drawing) are provided on the top surface of the cylindrical wall 24.
One case is shown), and the concave stripe 40 having a substantially V-shaped cross section is formed. The width A of the top surface of the cylindrical wall 24 having the recess 40 is set to about 5 to 15 mm as in the above embodiment, and the facing distance B between the top surface and the back surface of the wafer W is 0.5 to.
It is arranged so as to be about 1.5 mm. In addition, the groove 40
Depth C is set to about 1.0 to 2.0 mm. As described above, by forming the plurality of recesses 40 having a substantially V-shaped cross section on the top surface of the cylindrical wall 24, the surface area of the top surface of the cylindrical wall 24 can be increased to facilitate the formation of the liquid film. In addition, it is possible to suppress the invasion of the developing solution L into the inside of the back surface of the wafer and to accelerate the discharge of the liquid film between the top surface of the cylindrical wall 24 and the peripheral portion of the back surface of the wafer after the development processing. That is, the inner side wall 4
By forming 0a in a substantially vertical shape, the resistance against the flow of the liquid becomes large, so that it is possible to suppress the invasion of the developing liquid L that wraps around the back surface of the wafer into the inside (FIG. 8B).
In addition, when the developer L is shaken off after the processing, the resistance of the rising slope of the outer peripheral side wall 40b to the flow of the liquid is small, so that the liquid easily flows, and the slope is used. The discharge of the droplet M of the liquid film can be promoted (see FIG. 8C).

When the cylindrical wall 24 in the embodiment shown in FIG. 8 is used, before the developer L is supplied in the same manner as in the above embodiment, as shown by the phantom line in FIG.
The rinse liquid R may be previously sprayed from the cleaning liquid spraying nozzle 32 between the top surface of the cylindrical wall 24 and the peripheral portion of the back surface of the wafer W to form a liquid film. Note that, in the embodiment shown in FIG. 8, the other portions are the same as those in the above-mentioned embodiment, and therefore the description thereof will be omitted.

Next, a processing apparatus using the cylindrical wall 24 of still another embodiment will be described with reference to FIGS. 9 and 10. In this embodiment, the liquid film between the top surface of the cylindrical wall 24 and the peripheral portion of the back surface of the wafer W can be formed more reliably, and the developer L intrudes into the back surface of the wafer W. Developer L at the time of shaking off developer L after suppression and processing
In this case, the discharge of the developer L and the rinse R can be surely discharged.

That is, as shown in FIG. 9, similar to the above-described embodiment, a groove 41 and a groove 41 are formed on the top surface of the cylindrical wall 24 provided around the upper surface of the inner container 26 of the processing container 20. Regarding the above, regarding the case where the inner wall layer 42 and the outer wall layer 43 each having a plurality of uneven lines are formed on the inner and outer peripheral sides. in this case,
The concave and convex portions of the concave and convex stripes of the inner wall layer 42 and the outer wall layer 43 are formed by a substantially V-shaped groove in which the outer peripheral side wall 40b is inclined in the outer peripheral direction with respect to the inner peripheral side wall 40a, as in the embodiment shown in FIG. Has been done. In addition, a plurality of, for example, six drainage ports 44 are formed at appropriate intervals at the bottom of the groove 41 (FIG. 1).
0). The width A'of the top surface of the cylindrical wall 24 having the inner wall layer 42, the outer wall layer 43 and the concave groove 41 is set to about 15 to 17 mm, the width A1 of the concave groove 41 is about 3 to 5 mm, and the inner wall layer 42 and the outer wall layer are formed. The width A2 of 43 is set to about 5 to 7 mm, and the facing distance B between the top surface and the back surface of the wafer W is 0.5 to
It is arranged so as to be about 1.5 mm. In addition, the groove 40
Depth C is set to about 1.0 to 2.0 mm.

With the above configuration, the outer wall layer 43 first suppresses (blocks) the invasion of the developer L that wraps around to the back surface of the wafer W, and then there is the developer L that passes through the outer wall layer 43. In addition, since the developing solution L can be suppressed (prevented) by the inner wall layer 42, it is possible to more reliably prevent the developing solution L, which wraps around the back surface of the wafer W during processing, from entering the back surface of the wafer. it can. Further, in the groove 41, a part of the developing solution L and the rinse solution R used for cleaning can be received to suppress the invasion into the inner wall layer 42 side, and at the same time, it is discharged to the outside through the drainage port 44. be able to.
A second cleaning liquid jet nozzle 32 is incorporated in the inner container 26, and the rinse liquid R is jetted from this nozzle 32 between the top surface of the inner wall layer 42 and the peripheral portion of the back surface of the wafer W to rinse the rinse liquid. The liquid film of R is formed. Further, the upper opening of the processing container 20 is a lid body 50 that can be moved back and forth with respect to the processing container 20 by an elevator mechanism (not shown).
Is provided so that the lid 50 can be lowered to a predetermined distance position above the wafer W at the time of the development processing and cooperate with the processing container 20 to form a processing atmosphere space.

Next, a processing method using the above embodiment will be described with reference to FIG.

First, similarly to the first and second processing methods, the main arm 5 automatically transfers the wafer W to the spin chuck 21 and positions and holds it. When the wafer W is 8 inches, the rinse liquid R is supplied from the second cleaning liquid injection nozzle 32 while rotating at a low speed, for example, 10 to 100 rpm, preferably 30 to 60 rpm, and the peripheral portion of the back surface of the inner wall layer 42 and the rear surface of the wafer W. Prior to the supply of the developing solution L between the top surface of the inner wall layer 42 of the cylindrical wall 24 and the peripheral portion of the back surface of the wafer W by the capillary phenomenon.
To form a liquid film (see FIG. 11A).

Next, while the wafer W is rotated at a high speed of, for example, 2000 rpm, the developing solution L is supplied in a spray form from the processing liquid supply nozzle 23 to the upper surface (front surface) of the wafer W for, for example, 0.5 seconds, and then about 30 rpm. The developing solution L is supplied, for example, for 2 seconds while being rotated at a low speed to puddle the developing solution L on the surface of the wafer W (see FIG. 11B).
The developer L on the surface of the wafer W is diffused toward the periphery by centrifugal force to form a developer film on the surface of the wafer W (FIG. 1).
1 (c)). At this time, the exhaust pump and the drainage pump are driven to discharge the exhaust gas and drainage liquid inside the processing container 20 to the outside. In this way, after the surface of the wafer W is filled with the developing solution, the rotation of the wafer W is stopped and the developing process is performed for 50 seconds, for example. The temperature and humidity of this processing atmosphere are automatically controlled to the preset set values as in the above embodiment.

During the development process, when the developing solution L has come around to the back surface of the wafer W by the backing from the peripheral edge of the wafer W between the peripheral portion of the back surface of the wafer W and the top surface of the cylindrical wall 24. Is a cylindrical wall 24 close to the peripheral edge of the back surface of the wafer W.
It is received by the outer wall layer 43, and a liquid film of the developing solution L is formed by the capillary phenomenon, and the self-holding force of this liquid film prevents the liquid film from further invading. Further, the developer L that has passed through this liquid film and further inwardly is received by the concave groove 41, and the developer L further inwardly intruded between the back surface peripheral edge portion of the wafer W and the inner wall layer 42. Rinse liquid R formed
The action of the self-holding force of the liquid film prevents the intrusion of the cylindrical wall 24 inward. Further, the developing solution L that has flowed to the back surface side of the wafer W flows down on the outer peripheral surface of the cylindrical wall 24, and also flows from the liquid discharge port 44 provided in the concave groove 41 to flow into the processing container 20.
Is collected at the bottom of the tank and is discharged to the outside through the drainage port 29.

After the above-described development processing is performed, the rinse liquid R is supplied (sprayed) from the first cleaning liquid spray nozzle 31 to the surface of the wafer W while the wafer W is rotated at 2000 rpm, for example, and the second cleaning liquid is also sprayed. The rinse liquid R is supplied (sprayed) from the spray nozzle 32 toward the peripheral portion of the back surface of the wafer W to clean the front surface and the back surface of the wafer W (FIG. 11).
(D)).

After the cleaning process is completed as described above,
The wafer W is rotated at, for example, 5000 to 6000 rpm, and the rinse liquid R adhering to the wafer W is shaken off by the centrifugal force. At this time, the liquid film formed between the peripheral portion of the back surface of the wafer W and the top surface of the cylindrical wall 24, that is, the inner wall layer 42 and the outer wall layer 43 utilizes the inclined surfaces of the inner wall layer 42 and the outer wall layer 43 and the outer peripheral side wall 40b. And scattered as droplets M (FIG. 8).
(C)).

In the above processing method, before supplying the developing solution L,
The case where the liquid film of the rinse liquid R is formed between the peripheral portion of the back surface of the wafer W and the top surface of the inner wall layer 42 of the cylindrical wall 24 has been described in advance, but such a liquid film is not necessarily formed before the supply of the developing liquid. Even if it is not formed, the outer wall layer 43, the groove 41, and the inner wall layer 42 can prevent the developing solution L that wraps around the back surface of the wafer W during the developing process.

In the above embodiment, the case where the processing apparatus of the present invention is applied to the semiconductor wafer developing apparatus has been described, but it can be applied to either resist coating by spin coating or other processing liquid coating. . Further, it is needless to say that the present invention can be applied to the processing of objects such as LCD substrates and CDs other than semiconductor wafers. For example, in the case of a rectangular LCD substrate, the shape of the cylindrical wall 24 is formed into a rectangular tube wall smaller than the LCD substrate.

[0059]

As described above, according to the first to tenth aspects of the present invention, the cleaning liquid is provided between the peripheral portion of the rear surface of the object to be processed and the top surface of the cylindrical wall adjacent to the rear surface of the object to be processed. Since it is possible to effectively form the liquid film of, the processing liquid is supplied to the surface of the object to be processed during the processing step and diffused to the surface, and even if it wraps around on the back surface of the object, it is blocked by the liquid film of the cleaning liquid. can do. Further, since the liquid film is formed by the cleaning liquid, the liquid film can be used for cleaning the back surface of the object to be treated together with the cleaning liquid used in the cleaning step after the treatment, and the yield can be improved.

According to the eleventh aspect of the present invention, the inner peripheral side wall can prevent the processing liquid from wrapping around the back surface of the object to be invaded inward during the processing, and the top of the cylindrical wall can be prevented. By increasing the surface area of the surface, a liquid film can be easily formed between the cylindrical wall and the back surface of the object to be processed, and this liquid film suppresses the invasion of the processing liquid to the inner side of the back surface of the object to be processed. can do. Further, when the processing liquid after processing is shaken off, the droplets can be easily discharged to the outside by utilizing the inclination of the outer peripheral side wall of the recessed line, so that the processing efficiency and the yield can be improved. .

According to the twelfth aspect of the present invention, the invasion of the processing liquid that circulates to the back surface of the object to be processed can be first blocked by the outer wall layer, and the processing liquid that passes through the outer wall layer can be blocked by the inner wall layer. Therefore, it is possible to reliably prevent the treatment liquid from entering and further improve the yield.

[Brief description of drawings]

FIG. 1 is a perspective view of a semiconductor wafer coating / developing processing system to which the processing apparatus of the present invention is applied.

FIG. 2 is a sectional view of the processing apparatus of the present invention.

FIG. 3 is an enlarged cross-sectional view of a target object and a cylindrical wall according to the present invention.

FIG. 4 is a sectional perspective view showing another form of the cylindrical wall in the present invention.

FIG. 5 is an explanatory diagram showing a processing method of the present invention.

FIG. 6 is an explanatory diagram showing another processing method of the present invention.

FIG. 7 is a graph showing the relationship between the width of a cylindrical wall and the number of wraparound occurrences in the present invention.

FIG. 8 is a cross-sectional view (a) of a main part of another embodiment of the cylindrical wall according to the present invention, a schematic cross-sectional view (b) showing a state where the processing liquid is prevented from entering, and a schematic cross-sectional view (c) showing a state where the processing liquid is discharged. ).

FIG. 9 is a schematic sectional view of a processing apparatus using still another embodiment of the cylindrical wall in the present invention.

FIG. 10 is a plan view (a) of the cylindrical wall and an enlarged sectional view (b) taken along line I-I thereof.

FIG. 11 is an explanatory diagram showing an example of a processing method using the processing device having the cylindrical wall.

[Explanation of symbols]

 Reference Signs List 20 processing container 21 spin chuck (rotation holding means) 23 processing liquid supply nozzle (processing liquid supply means) 24 cylindrical wall 24a top surface 24e concavo-convex line 24f recessed portion 24g inclined surface 31 first cleaning liquid injection nozzle 32 second cleaning liquid injection nozzle 36 Processing Chamber 40 Recess 40a Inner Side Wall 40b Outer Side Wall 41 Outer Groove 42 Inner Wall Layer 43 Outer Wall Layer 44 Drain Port W Semiconductor Wafer (Processing Object) L Developer (Processing Solution) R Rinse Solution (Cleaning Solution)

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification number Internal reference number FI Technical indication H01L 21/304 N (72) Inventor Kosuke Yoshihara 2655 Tsukyu, Kikuyo-cho, Kikuchi-gun, Kumamoto Prefecture Tokyo Electron Kyushu Kumamoto office

Claims (14)

[Claims] 1. A treatment method for treating a surface of an object to be treated by supplying the treatment liquid to the surface of the object to be treated held by a rotation holding means, before supplying the treatment liquid to the surface of the object to be treated. In addition, a processing method, characterized in that a liquid film of a cleaning liquid is formed between the peripheral portion of the back surface of the object to be processed and the top surface of the cylindrical wall adjacent to the back surface of the object to be processed. 2. A processing method for supplying a processing liquid to the surface of an object to be processed held by a rotation holding means to process the surface of the object to be processed, comprising: A step of forming a liquid film of a cleaning liquid between the back surface and the top surface of the cylindrical wall; a step of supplying the processing liquid to the surface of the object to be processed; A treatment method comprising: a step of diffusing over the entire surface of the object to be treated; and a step of supplying a cleaning liquid to the peripheral portions of the front surface and the back surface of the object to be treated. 3. A treatment method for treating a surface of an object to be treated by supplying a treatment liquid to the surface of the object to be treated held by a rotation holding means, comprising: A step of forming a liquid film of a cleaning liquid between the top surface of the cylindrical wall adjacent to the back surface, a step of supplying the processing liquid to the surface of the object to be processed, the object to be processed being stationary, and a processing atmosphere A treatment method comprising: a step of maintaining the vapor atmosphere of the treatment liquid to diffuse the treatment liquid over the entire surface of the object to be treated; and a step of supplying a cleaning liquid to the peripheral portions of the front surface and the back surface of the object to be treated. 4. A liquid film of a cleaning liquid having a width of 5 to 15 mm is formed between the peripheral portion of the back surface of the object to be processed and the top surface of the cylindrical wall adjacent to the back surface of the object to be processed. Item 4. The processing method according to any one of Items 1 to 3. 5. The distance between the peripheral portion of the back surface of the object to be processed and the top surface of the cylindrical wall adjacent to the back surface of the object to be processed is 0.5 to 1.5 m.
5. The processing method according to claim 4, wherein m is set. 6. A rotation holding means for rotating an object to be processed,
Processing liquid supply means for supplying the processing liquid to the surface of the object to be processed,
In a processing device comprising a cleaning liquid supply means for supplying a cleaning liquid to the front surface and the back surface of the object to be processed, and a cylindrical wall arranged at a portion close to the back surface peripheral edge side of the object to be processed, the top surface of the cylindrical wall A processing device having a width of 5 to 15 mm. 7. A rotation holding means for rotating an object to be processed,
Processing liquid supply means for supplying the processing liquid to the surface of the object to be processed,
In a processing device comprising a cleaning liquid supply means for supplying a cleaning liquid to the front surface and the back surface of the object to be processed, and a cylindrical wall arranged at a portion close to the back surface peripheral edge side of the object to be processed, the top surface of the cylindrical wall The width is formed to be 5 to 15 mm, and the distance between the back surface of the object to be processed and the top surface of the cylindrical wall is 0.5 to
A processing device having a size of 1.5 mm. 8. The processing apparatus according to claim 6, wherein an uneven line is formed on the top surface of the cylindrical wall. 9. The processing apparatus according to claim 6, wherein a recess is formed on the top surface of the cylindrical wall. 10. The processing apparatus according to claim 6, wherein the top surface of the cylindrical wall is an inclined surface having a downward slope toward the outer circumference. 11. A rotation holding means for rotating an object to be processed, a processing liquid supply means for supplying a processing liquid to the surface of the object to be processed, and a cylinder arranged at a portion close to the back surface peripheral edge side of the object to be processed. A processing apparatus comprising a wall, wherein a plurality of substantially V-shaped concave lines in which an outer peripheral side wall is inclined toward an outer peripheral direction with respect to an inner peripheral side wall are formed on a top surface of the cylindrical wall. 12. A rotation holding means for rotating an object to be processed, a processing liquid supply means for supplying a processing liquid to the surface of the object to be processed, and a cylinder arranged at a portion close to the back surface peripheral edge side of the object to be processed. In the processing apparatus including a wall, a concave groove is formed on the top surface of the cylindrical wall, and an inner wall layer and an outer wall layer having a plurality of concave and convex lines are formed on the inner and outer peripheral sides of the concave groove, respectively. And processing equipment. 13. The process according to claim 12, wherein the concave and convex portions of the concave and convex stripes of the inner wall layer and the outer wall layer are substantially V-shaped grooves in which the outer peripheral side wall inclines toward the outer peripheral direction with respect to the inner peripheral side wall. apparatus. 14. The processing apparatus according to claim 12, wherein a drainage port is provided at the bottom of the concave groove.