JPH08160881A - Surface conduction electron-emitting device, electron source substrate, image forming apparatus, and manufacturing method thereof - Google Patents

Abstract

(57) [Summary] [Structure] After depositing a liquid containing a metal element on a substrate, shape the deposit containing the metal element by laser irradiation, and then remove components other than the metal element. Then, an electrode pair is formed by forming a metal film, a conductive thin film is formed between the electrodes, and an electron emitting portion is formed on the thin film to manufacture a surface conduction electron-emitting device. The electron source substrate and the image forming apparatus are manufactured. [Effect] The device electrode of the electron-emitting device can be formed without using the conventional semiconductor processing technology, a large facility is not required for the device electrode manufacturing process, and the manufacturing process is greatly simplified, so that the surface conduction electron The emitting element, the electron source substrate, and the image forming apparatus can be obtained, and the cost can be reduced.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface conduction electron-emitting device, an electron source substrate, an image forming apparatus and a method for manufacturing them.

[0002]

2. Description of the Related Art Conventionally, two types of electron emitters, a thermoelectron source and a cold cathode electron source, are known. The cold cathode electron source is a field emission type (hereinafter referred to as FE type), metal / insulating layer /
There are a metal type (hereinafter referred to as MIM type), a surface conduction electron-emitting device, and the like.

An example of the FE type is reported by Dyke et al. (W.
P. Dyke and WW Dolan, "Field emission", Advance
in Electron Physics, 8, 89 (1956)), S
Report of pindt (CA Spindt, "Physical Properties of
thin-film field emission cathodes with molybdeniu
m cones ", J. Appl. Phys., 47, 5248 (1976)) and the like are known.

As an example of the MIM type, a report by Mead (C.
A. Mead, "The tunnel-emission amplifier", J. Appl.
Phys., 32, 646 (1961)) and the like are known.

As an example of the surface conduction electron-emitting device, a report by Elinson (MI Elinson, Radio Eng. Electron
Phys., 10 (1965)).

The surface conduction electron-emitting device utilizes a phenomenon that electron emission occurs when a current is passed through a thin film of a small area formed on a substrate in parallel with the film surface. As the surface conduction electron-emitting device, one using the SnO ₂ thin film and the one using the Au thin film described in the above-mentioned Erinson's report (G. Dittmer, Thin Solid Films, 9, 317 (197)
2)), In ₂ O ₃ / SnO ₂ thin film (M. Hartwell
and CG Fonstad, IEEE Trans. ED Conf., 519 (197
5)), by carbon thin film (Araki et al., Vacuum, No. 26)
Vol. 1, No. 22, page (1983)).

FIG. 14 shows the structure of the Hartwell device described above as a typical device structure of these surface conduction electron-emitting devices. In the figure, 1 is a substrate. Reference numeral 4 denotes a conductive thin film, which is composed of a metal oxide thin film or the like formed by sputtering on an H-shaped pattern, and the electron emitting portion 5 is formed by an energization process called energization forming described later. The element electrode spacing L in the figure is 0.5 to 1
mm and W'are set to 0.1 mm. Since the position and shape of the electron emitting portion 5 are unknown,
It is shown as a schematic diagram.

Conventionally, in these surface conduction electron-emitting devices, it has been general that the electron-emitting portion 5 is formed in advance by conducting an energization process called energization forming on the conductive thin film 4 before the electron emission. That is, the energization forming is performed by applying a direct current voltage or a very slow rising voltage, for example, about 1 V / min to both ends of the conductive thin film 4 to locally break, deform or alter the conductive thin film, and electrically. That is, the electron-emitting portion 5 having a high resistance is formed. In the electron emitting portion 5, a crack is generated in a part of the conductive thin film 4, and electrons are emitted from the vicinity of the crack. The surface conduction electron-emitting device that has been subjected to the energization forming process applies a voltage to the conductive thin film 4,
Electrons are emitted from the above-mentioned electron emitting portion 5 by passing a current through the element.

The above-mentioned surface conduction electron-emitting device has an advantage that a large number of devices can be arrayed and formed in a large area because of its simple structure and easy manufacture. Therefore, various applications are being researched that can make full use of the characteristics. For example,
Display devices such as a charged beam source and an image display device may be used.

[0010]

One of the features of the surface conduction electron-emitting device as described above is that it has a simple structure. However, in the conventional manufacturing techniques, especially in the formation of the device electrode. Used vacuum deposition, photolithography, and etching techniques, which are one of the usual semiconductor manufacturing techniques. For example, in the conventional manufacturing method described in Japanese Patent Laid-Open No. 2-56822, particularly when manufacturing a large-sized flat image forming apparatus, a large-scale apparatus can be used as a vacuum film forming apparatus, a mask aligner, an etching apparatus, or the like. As a result, large-scale capital investment is required. Therefore, development of a simple manufacturing method using an inexpensive manufacturing apparatus has been desired.

The present invention has been made to solve such a problem, and an object thereof is to manufacture a surface conduction electron-emitting device without using large equipment and in a very simplified process. A method, an element having excellent characteristics, an electron source substrate using the element, and an image forming apparatus are provided.

[0012]

The present invention comprises the steps of forming at least one pair of electrodes on a substrate, forming a conductive thin film between the electrodes, and forming an electron emitting portion on the thin film. In the method for manufacturing a surface conduction electron-emitting device, the electrode pair is formed by depositing a liquid containing a metal element on a substrate, then subjecting the deposit containing the metal element to shape processing by laser irradiation, and The present invention also provides a method for manufacturing a surface conduction electron-emitting device, which is performed by removing components other than the metal element to form a metal film.

In this manner, the liquid containing the metal element is deposited on the substrate, the deposit is patterned by laser irradiation, and then the components other than the metal element are removed to form a metal film having a desired shape. Since it can be obtained, the process can be greatly simplified as compared with the conventional device electrode forming process of the surface conduction electron-emitting device, and further, large equipment such as a vacuum device or a mask aligner is not required, so that the cost can be reduced. Can be significantly reduced.

[0014]

The present invention will be described in detail below with reference to the drawings.

The surface conduction electron-emitting device which can be effectively used in the present invention is basically a planar surface conduction electron-emitting device.

1 and 2 are views showing the structure of an example of a surface conduction electron-emitting device obtained by the present invention. FIG. 1 is a plan view and FIG. 2 is a sectional view.

1 and 2, 1 is a substrate, 2 and 3 are device electrodes, 4 is a conductive thin film, and 5 is an electron emitting portion.

As the substrate 1, quartz glass, glass having a low content of impurities such as Na, soda lime glass, a glass substrate having SiO ₂ formed on its surface, and a ceramic substrate such as alumina are used.

As the material of the device electrodes 2 and 3, a general conductor is used, and for example, Ni, Cr, Au, M.
Metals or alloys such as o, W, Pt, Ti, Al, Cu, Pd, and Pd, Ag, Au, RuO ₂ , Pd-A.
It is appropriately selected from a printed conductor composed of a metal such as g or a metal oxide and glass, a transparent conductor such as In ₂ O ₃ —SnO ₂ and a semiconductor conductor material such as polysilicon.

The element electrode spacing L is preferably several hundred Å to several hundred μm. Further, it is desirable that the voltage applied between the device electrodes is low, and it is necessary to manufacture the device with good reproducibility. Therefore, the preferred device electrode interval is several μm to several tens of μm.

The device electrode length W is several μm to several hundred μm from the viewpoint of the resistance value of the electrode and the electron emission characteristics, and the film thickness d of the device electrodes 2 and 3 is several hundred Å to several μm. Is preferred.

The device of the present invention is not limited to the structure shown in FIGS. 1 and 2, but may be a device in which a conductive thin film and a device electrode pair are sequentially laminated on a substrate.

Here, the manufacturing process of the device electrode, which is a feature of the present invention, will be described step by step.

First, as the liquid containing a metal element,
You may use the mixture which made the above-mentioned metal particle parted in the liquid medium, such as an organic solvent, or these organometallic compounds,
It is also possible to use an organic metal complex or an organic metal salt in which an organic compound having a metal element in the molecule by a chemical bond is dissolved in a liquid medium. The viscosity of this liquid is appropriately selected according to the coating method. For example, in the case of a screen printing method or the like, it is preferable that the paste is used.

As a means for depositing a liquid containing these metal elements on a substrate, for example, a usual coating method such as a spray coating method, a spin coating method, a dip (immersion pull-up) coating method, or a roll coating method is applied. It is possible. Also,
It is also possible to deposit in a certain shape at a desired position on the substrate by various printing methods typified by screen printing. However, it is advisable to appropriately add an organic solvent or the like in order to optimize the viscosity or the evaporation rate (solidification rate) so as to obtain a liquid containing the metal element suitable for each coating method.

Here, as a typical example, a case where a printing paste (for example, an organometallic compound paste called MOD paste) is used as a liquid containing a metal element and screen printing is performed as a method of applying the substrate will be further described. To do.

As the MOD paste, Au-MOD and Pt-M, which have been conventionally developed for screen printing, are used.
Organometallic compounds having various metals such as OD and AuPd-MOD by chemical bonds in the molecule are dissolved in oil such as terpineol to give a viscosity of 10,000 cps-
What was adjusted to about 1 million cps can be used.
After applying such a MOD paste to the substrate by ordinary screen printing, a drying treatment at 70 ° C. for about 30 minutes is performed to evaporate the organic solvent, and the thickness of the paste is about 30 μm or less due to the viscosity of the paste. The organic metal compound film of is obtained.

Next, the organic metal compound film thus deposited on the substrate is irradiated with a laser. Then, the laser-irradiated portion of the organometallic compound film is selectively removed from the substrate surface. Therefore, in actual processing, the wavelength of the laser used and the power density on the sample surface during irradiation are important. Here, since the wavelength and the output are selected according to the type of laser, it is determined whether suitable processing is possible depending on which laser oscillator is used. Also,
As a method of irradiating a sample with laser light, for example, as shown in FIG.
As shown in FIG. 1, a laser beam is focused finely by a lens, and the relative positional relationship between the sample and the laser beam is changed, and a thick laser beam is molded by a mask as shown in FIG. A method of irradiating the sample surface with laser light having an arbitrary shape (reduced as necessary) can be applied.

The wavelength and power density required to remove the organic substance as in the present invention are determined by the organic material and the film thickness on the substrate.
2 μm to 10 μm, power density is 1 × 10 ⁶ W /
cm ² or more is effective. Therefore, as an effective laser oscillator, an Nd: YAG laser (fundamental wave, second harmonic,
Suitable lasers are excimer lasers such as third harmonics) and KrF. Here, as a principle of laser processing (removal) of organic matter, in general, irradiation with a long-wavelength laser such as infrared rays causes evaporation removal by heating,
Further, it is considered that the irradiation of a laser having a wavelength shorter than that of ultraviolet rays causes gasification and removal of organic substances due to the cutting of chemical bond portions, which is considered to be capable of processing.

Concretely, for example, the processing was carried out by using an ordinary Nd: YAG second harmonic (wavelength 0.532 μm) laser with a Q switch. A laser beam with a Q-switch frequency of 1 kHz and an average output of about 5 W is focused on the sample surface to about 10 μm square using an aperture and a condenser lens, and the sample is line-scanned at 10 mm / sec. Only the irradiated part is selectively removed, the width is about 10μ
m grooves were formed. Also, as the Nd: YAG laser, a fundamental wave (wavelength 1.06 μm), a third harmonic (wavelength 0.353 μm), a fourth harmonic (wavelength 0.265 μm), etc. can be applied in addition to the second harmonic. is there.

As an example of using a laser other than the Nd: YAG laser, a KrF excimer laser (wavelength 0.248) is used.
(μm) is shown.

An average output of about 10 W at an oscillation frequency of 200 Hz
The laser beam of is molded into a width of about 10 μm and a length of about 300 μm on the sample surface by using a slit and a lens, and when the fixed sample surface is irradiated with 50 pulses, only the laser-irradiated portion of this organometallic compound film is selectively formed. Removed to
A groove having a width of about 10 μm and a length of about 300 μm was formed.

In this way, the organic substance is removed from the organic substance film containing the metal processed into the desired shape by laser irradiation to obtain a metal film to be a desired device electrode on the substrate. As a method of removing this organic substance, for example, heat treatment in the air or an oxygen atmosphere can be applied. Organic substances, which depend on the material, usually undergo decomposition reaction (thermal decomposition) at a temperature of around 600 ° C or lower and chemically change to carbon dioxide, water, etc. Therefore, the liquid containing this metal element also contains only metal on the substrate. Since the organic matter is removed while remaining in the substrate, as a result, a metal film having a shape similar to that obtained by laser processing is obtained on the substrate. This thermal decomposition reaction is a method generally used when obtaining a metal film from a printing paste such as screen printing (for example, an organometallic compound paste called MOD paste). As a method for removing only the organic substance, a usual method other than the thermal decomposition reaction such as a decomposition reaction by irradiating ultraviolet rays (further heating the substrate as necessary) in an ozone atmosphere can be applied.

The conductive thin film 4 is particularly preferably a fine particle film composed of fine particles in order to obtain good electron emission characteristics. The thickness of the conductive thin film 4 depends on the step coverage to the device electrodes 2 and 3 and between the device electrodes 2 and 3. The resistance is appropriately set depending on the resistance value and the energization forming conditions described later, but is preferably several Å to several thousand Å, particularly preferably 10 Å to 500 Å. The sheet resistance value is 10 ³ to 10 ⁷ Ω / □.

The material forming the conductive thin film 4 is P
d, Pt, Ru, Ag, Au, Ti, In, Cu, C
Metals such as r, Fe, Zn, Sn, Ta, W and Pb, Pd
O, SnO ₂ , In ₂ O ₃ , oxides such as PbO and Sb ₂ O ₃ , HfB ₂ , ZrB ₂ , LaB ₆ , CeB ₆ , YB ₄ , G
Borides such as dB ₄ , TiC, ZrC, HfC, TaC,
Examples thereof include carbides such as SiC and WC, nitrides such as TiN, ZrN and HfN, semiconductors such as Si and Ge, and carbon.

The fine particle film described here is a film in which a plurality of fine particles are aggregated, and its fine structure is not only a state in which the fine particles are dispersed and arranged but also a state in which the fine particles are adjacent to each other or overlap each other (island). (Including the shape), and the particle size of the fine particles is several Å to several thousand Å, preferably 10 Å to 200 Å.

The electron emitting portion 5 is a high resistance crack formed in a part of the conductive thin film 4, and is formed by energization forming or the like. In addition, the cracks may have conductive fine particles having a particle diameter of several Å to several hundred Å. The conductive fine particles contain at least a part of the elements forming the conductive thin film 4. Further, the electron emitting portion 5 and the conductive thin film 4 in the vicinity thereof may contain carbon or a carbon compound.

Further, the electron emitting portion 5 is formed by conducting an energization process called energization forming of the element in which the conductive thin film 4 and the element electrodes 2 and 3 are formed. In the energization forming, electricity is applied between the device electrodes 2 and 3 by a power source (not shown) to locally destroy, deform or alter the conductive thin film 4 to form a portion having a changed structure. The site where the structure is locally changed is called an electron emitting portion 5 (FIG. 3C). An example of the voltage waveform of energization forming is shown in FIG.

The voltage waveform is preferably a pulse shape, and the voltage pulse having a constant pulse peak value is continuously applied (FIG. 4A) and the voltage pulse is applied while the pulse peak value is increased (FIG. 4A). 4 (b)). First,
A case where the pulse peak value is a constant voltage (FIG. 4A) will be described.

T1 and T2 in FIG. 4 are the pulse width and the pulse interval of the voltage waveform. T1 is 1 μsec to 10 ms, T2 is 10 μsec to 100 ms, and the peak value of the triangular wave (peak during energization forming) Voltage) is appropriately selected according to the form of the surface conduction electron-emitting device, and an appropriate vacuum degree,
For example, it is applied for several seconds to several tens of minutes in a vacuum atmosphere of about 1 × 10 ⁻⁵ Torr. The waveform applied between the electrodes of the element is not limited to the triangular wave, and a desired waveform such as a rectangular wave may be used.

T1 and T2 in FIG.
Similar to the case of (a), the peak value of the triangular wave (peak voltage during energization forming) is increased by, for example, about 0.1 V step and applied in an appropriate vacuum atmosphere.

In the energization forming process in this case, the device current is measured during the pulse interval T2 at a voltage that does not locally break or deform the conductive thin film 4, for example, a voltage of about 0.1V, The resistance value is obtained, and when the resistance is 1 MΩ or more, the energization forming is completed.

Next, it is desirable to perform a process called an activation process on the element for which the energization forming has been completed.

The activation step is, for example, 10 ^-4 to 10 ^-5.
Similar to energization forming, this is a process in which a voltage pulse with a constant pulse peak value is repeatedly applied at a degree of vacuum, and carbon and carbon compounds derived from organic substances present in a vacuum are deposited on a conductive thin film. This is a process of remarkably changing the current If and the emission current Ie. The activation process is completed, for example, when the emission current Ie is saturated while measuring the device current If and the emission current Ie. Further, it is preferable that the applied voltage pulse is an operation drive voltage.

Here, carbon or carbon compound means graphite (refers to both single crystal and polycrystal) and amorphous carbon (refers to a mixture of amorphous carbon and polycrystal graphite). Film thickness is 50
It is preferably 0 Å or less, more preferably 300 Å or less.

The electron-emitting device thus manufactured is preferably operated and driven in an atmosphere having a higher vacuum degree than the vacuum degree in the energization forming step and the activation step. Also, in an atmosphere with a higher degree of vacuum, 80 ° C to 150 ° C
It is desirable to drive after heating.

The degree of vacuum higher than the degree of vacuum obtained by the energization forming step and the activation treatment is, for example, a degree of vacuum of about 10 ⁻⁶ or more, more preferably an ultrahigh vacuum system, and newly added carbon and carbon compounds. Is the degree of vacuum that hardly deposits on the conductive thin film. By doing so, the device current I
It is possible to stabilize f and the emission current Ie.

Next, the image forming apparatus of the present invention will be described.

The electron source substrate used in the image forming apparatus is formed by arranging a plurality of surface conduction electron-emitting devices on the substrate.

As a method of arranging the surface-conduction type electron-emitting devices, the surface-conduction type electron-emitting devices are arranged in parallel, and both ends of the individual devices are connected by wiring in a ladder-type arrangement (hereinafter, ladder-type arrangement electron source substrate). And a simple matrix arrangement (hereinafter referred to as a matrix-type arrangement electron source substrate) in which the X-direction wiring and the Y-direction wiring of a pair of device electrodes of the surface conduction electron-emitting device are connected, respectively. An image forming apparatus having a ladder type electron source substrate requires a control electrode (grid electrode) which is an electrode for controlling the flight of electrons from the electron-emitting device.

The structure of the electron source manufactured based on this principle will be described below with reference to FIG. In the figure, 71 is an electron source substrate, 72 is an X-direction wiring, 73 is a Y-direction wiring, 7
4 is a surface conduction electron-emitting device, and 75 is a wire connection. The surface conduction electron-emitting device 74 may be either of the above-mentioned plane type or vertical type.

In the figure, the substrate used as the electron source substrate 71 is the above-mentioned glass substrate or the like, and its shape is appropriately set according to the application.

The m X-direction wirings 72 are Dx1, Dx2,
... Dxm, Y direction wiring 73 is Dy1, Dy
2, ... Dyn n wirings.

Further, the material, the film thickness and the wiring width are appropriately set so that a substantially uniform voltage is supplied to many surface conduction electron-emitting devices. The m X-direction wirings 72 and the n Y-direction wirings 73 are electrically separated by an interlayer insulating layer (not shown) to form a matrix wiring (m and n are both positive integers).

The interlayer insulating layer (not shown) is formed on the entire surface of the electron source substrate 71 on which the X-direction wiring 72 is formed or on a desired region thereof. The X-direction wiring 72 and the Y-direction wiring 73 are drawn out as external terminals.

Further, device electrodes (not shown) of the surface conduction electron-emitting device 74 are electrically connected to the m X-direction wirings 72, the n Y-direction wirings 73, and the connection wires 75.

The surface conduction electron-emitting device may be formed either on the substrate or on an interlayer insulating layer (not shown).

As will be described in detail later, the surface conduction electron-emitting devices 74 arranged in the X direction are arranged on the X direction wiring 72.
Is electrically connected to a scanning signal generating means (not shown) for applying a scanning signal for scanning the row according to the input signal.

On the other hand, a modulation signal (not shown) for applying a modulation signal for modulating each row of the surface conduction electron-emitting devices 74 arranged in the Y direction according to an input signal to the Y-direction wiring 73. It is electrically connected to the signal generating means.

Further, the driving voltage applied to each element of the surface conduction electron-emitting device is supplied as a difference voltage between the scanning signal and the modulation signal applied to the element.

In the above structure, individual elements can be selected and driven independently by using only simple matrix wiring.

Next, an image forming apparatus using the electron source of the simple matrix wiring manufactured as described above will be described with reference to FIGS. 6, 7 and 8. FIG. 6 is a diagram showing a basic configuration of the image forming apparatus, FIG. 7 is a fluorescent film, and FIG. 8 is a block diagram of a drive circuit for displaying in accordance with an NTSC television signal, including the drive circuit. Represents an image forming apparatus.

In FIG. 6, 71 is an electron source substrate having an electron-emitting device formed on the substrate, 81 is a rear plate to which the electron source substrate 71 is fixed, and 86 is a fluorescent film 84 and a metal back 85 on the inner surface of the glass substrate 83. The face plate on which is formed 82 is a support frame, and the rear plate 81, the support frame 82, and the face plate 86 are coated with frit glass or the like, and baked at a temperature of 400 to 500 ° C. for 10 minutes or more in the air or nitrogen. By sealing, the envelope 88 is configured.

In FIG. 6, 74 corresponds to the electron emitting portion in FIG. Reference numerals 72 and 73 are an X-direction wiring and a Y-direction wiring connected to a pair of device electrodes of the surface conduction electron-emitting device.

The envelope 88 is composed of the face plate 86, the support frame 82, and the rear plate 81 as described above, but the rear plate 81 is provided mainly for the purpose of reinforcing the strength of the electron source substrate 71. If the electron source substrate 71 itself has sufficient strength, the separate rear plate 81 is not necessary, and the support frame 82 is directly sealed to the electron source substrate 71, and the face plate 86, the support frame 82 and the electron source are provided. The substrate 71 may constitute the envelope 88. Furthermore, by providing an atmospheric pressure resistant supporting member called a spacer between the face plate 86 and the rear plate 81, the envelope 88 having sufficient strength against atmospheric pressure can be obtained.

In FIG. 7, 92 is a phosphor. Phosphor 92
In the case of monochrome, it is composed of only the phosphor, but in the case of a color phosphor film, it is composed of a black member 91 called a black stripe or a black matrix depending on the arrangement of the phosphor and a phosphor 92. In the case of color display, the purpose of providing the black stripes (black matrix) is to make the color-mixed portions between the respective phosphors 92 of the three primary color phosphors black so as to make the color mixture inconspicuous, and the phosphor film 84. This is to suppress the deterioration of the contrast due to the reflection of external light. As the material of the black stripe, not only a material which is usually used as a main component of graphite but also a material which transmits and reflects light little can be used.

As a method for applying the phosphor to the glass substrate 93, a precipitation method or a printing method is used regardless of whether it is monochrome or color.

A metal back 85 (FIG. 6) is usually provided on the inner surface side of the fluorescent film 84 (FIG. 6). The purpose of the metal back is to improve the brightness by specularly reflecting the light toward the inner surface side of the light emitted from the phosphor to the face plate 86 side, to act as an electrode for applying an electron beam acceleration voltage, and This is to protect the phosphor from damage due to collision of negative ions generated in the enclosure. For the metal back, after the fluorescent film is manufactured, the inner surface of the fluorescent film is smoothed (usually called filming), and then Al
Can be manufactured by depositing by vacuum evaporation or the like.

The face plate 86 may be further provided with a transparent electrode (not shown) on the outer surface side of the fluorescent film 84 in order to enhance the conductivity of the fluorescent film 84.

When performing the above-mentioned sealing, in the case of color, it is necessary to oppose the phosphors of the respective colors and the electron-emitting device, and it is necessary to perform sufficient alignment.

The envelope 88 is connected to an exhaust pipe (not shown) through a ^{pressure of} 10 ^−7.
The degree of vacuum is set to about Torr and sealing is performed. Also,
A getter process may be performed to maintain the degree of vacuum after the envelope 88 is sealed. This is a process of heating a getter placed at a predetermined position (not shown) immediately before or after sealing the envelope 88 to form a vapor deposition film.
The getter usually has Ba as a main component, and due to the adsorption action of the deposited film, for example, 1 × 10 ⁻⁵ Torr to 1 × 10 ^−7.
The vacuum degree of Torr is maintained. The steps after energization forming of the surface conduction electron-emitting device are appropriately set.

Next, regarding the image forming apparatus constituted by using the electron source having the simple matrix arrangement type substrate, the NTS
A schematic configuration of a drive circuit for performing television display based on a C system television signal will be described with reference to the block diagram of FIG. 101 is the display panel, 102 is a scanning circuit, 103 is a control circuit, 104 is a shift register,
105 is a line memory, 106 is a sync signal separation circuit, 1
Reference numeral 07 is a modulation signal generator, and Vx and Va are DC voltage sources.

The function of each section will be described below.

First, the display panel 101 has terminals Dox1 to Dox.
m, terminals Doy1 to Doyn, and a high-voltage terminal Hv to connect to an external electric circuit. Of these, terminals Dox1
In Doxm, an electron source provided in the display panel, that is, a group of surface conduction electron-emitting devices arranged in a matrix of m rows and n columns is sequentially driven row by row (n elements). A scanning signal for

On the other hand, a modulation signal for controlling the output electron beam of each element of the surface conduction electron-emitting devices of one row selected by the scanning signal is applied to the terminals Dy1 to Dyn. A DC voltage source Va supplies a DC voltage of, for example, 10 kV to the high-voltage terminal Hv, which supplies sufficient energy to excite the phosphor into the electron beam output from the surface conduction electron-emitting device. It is an acceleration voltage for applying.

Next, the scanning circuit 102 will be described.
The circuit has m switching elements inside (indicated by S1 to Sm in the figure), and each switching element is either the output voltage of the DC voltage source Vx or 0 (V) (ground level). Select either one and display panel 10
One of the terminals Dx1 to Dxm is electrically connected. Each of the switching elements S1 to Sm operates based on the control signal Tscan output from the control circuit 103, but can actually be configured by combining switching elements such as FETs.

The DC voltage source Vx is a constant voltage such that the driving voltage applied to an unscanned element is equal to or lower than the electron emission threshold based on the characteristics of the surface conduction electron-emitting element (electron emission threshold voltage). Is set to output.

Further, the control circuit 103 has a function of matching the operation of each part so that an appropriate display is performed based on an image signal input from the outside. The control signals Tscan, Tsft, and Tmry are generated for each unit based on the synchronization signal Tsync sent from the synchronization signal separation circuit 106 described below.

The sync signal separation circuit 106 is a circuit for separating a sync signal component and a luminance signal component from an NTSC system television signal input from the outside, and can be constructed by using a frequency separation (filter) circuit. As is well known, the sync signal separated by the sync signal separation circuit 106 includes a vertical sync signal and a horizontal sync signal.
Here, for convenience of explanation, it is shown as a Tsync signal. On the other hand, the luminance signal component of the image separated from the television signal is referred to as a DATA signal for convenience, but the signal is input to the shift register 104.

The shift register 104 is for serially / parallel converting the DATA signals serially input in time series for each line of the image, and operates based on the control signal Tsft sent from the control circuit 103. (That is, the control signal Tsft is the same as the shift register 1
04 shift clock.

The serial / parallel converted image data for one line (corresponding to driving data for n electron-emitting devices) is output from the shift register 104 as n parallel signals Id1 to Idn. .

The line memory 105 is a storage device for storing data for one line of an image for a required time, and stores the contents of Id1 to Idn as appropriate in accordance with the control signal Tmry sent from the control circuit 103. The stored contents are output as Id1 to Idn, and the modulation signal generator 107 is output.
Is input to

The modulation signal generator 107 is a signal source for appropriately driving and modulating each of the surface conduction electron-emitting devices in accordance with each of the image data Id1 to Idn, and its output signal is output through terminals Doy1 to Doyn. The voltage is applied to the surface conduction electron-emitting device in the display panel 101.

As described above, the electron-emitting device according to the present invention has the following basic characteristics with respect to the emission current Ie. That is, as described above, the electron emission has a clear threshold voltage Vth, and the electron emission occurs only when a voltage higher than Vth is applied.

Further, for a voltage equal to or higher than the electron emission threshold, the emission current also changes according to the change in the voltage applied to the element. The electron emission threshold voltage Vth or the degree of change of the emission current with respect to the applied voltage may be changed by changing the material, the configuration, or the manufacturing method of the electron emitting element.
In any case, the following can be said.

That is, when the pulse voltage of this element is applied, for example, no electron emission occurs even if a voltage below the electron emission threshold is applied, but when a voltage above the electron emission threshold is applied, an electron beam is output. To be done. At that time, firstly, the intensity of the output electron beam can be controlled by changing the peak value Vm of the pulse. Second, it is possible to control the total amount of charges of the electron beam output by changing the pulse width Pw.

Therefore, as a method of modulating the electron-emitting device according to the input signal, there are a voltage modulation method, a pulse width modulation method and the like. To implement the voltage modulation method, the modulation signal generator 107 is fixed. A circuit of a voltage modulation system is used that generates a voltage pulse of a length but appropriately modulates the peak value of the pulse according to the input data.

To implement the pulse width modulation method, the modulation signal generator 107 generates a voltage pulse having a constant peak value, but a pulse for appropriately modulating the width of the voltage pulse according to the input data. A width modulation type circuit is used.

Through the series of operations described above, the image display device of the present invention can display television using the display panel 101. Although not particularly described in the above description, the shift register 104 and the line memory 105 may be either digital signal type or analog signal type, and the important point is that serial / parallel conversion and recording of image signals are performed. It may be performed at a predetermined speed.

When the digital signal type is used, it is necessary to convert the output signal DATA of the periodic signal separation circuit 106 into a digital signal, which is possible if the output section of 106 is equipped with an A / D converter. . Further, in connection with this, the circuit used for the modulation signal generator 107 is slightly different depending on whether the output signal of the line memory 105 is a digital signal or an analog signal.

First, the case of digital signals will be described. In the voltage modulation method, for example, a well-known D / A conversion circuit may be used as the modulation signal generator 107, and an amplification circuit or the like may be added if necessary.

Further, in the case of the pulse width modulation method, the modulation signal generator 107 outputs, for example, a high-speed oscillator and a counter (counter) for counting the number of waves output by the oscillator and the output value of the counter and the output value of the memory. It can be configured by using a circuit in which comparators for comparison are combined. If necessary, an amplifier for voltage-amplifying the pulse-width-modulated modulation signal output from the comparator up to the drive voltage of the surface conduction electron-emitting device may be added.

Next, the case of analog signals will be described. In the voltage modulation method, for the modulation signal generator 107, for example, an amplifier circuit using a well-known operational amplifier may be used, and a level shift circuit or the like may be added if necessary. In the case of the pulse width modulation method, for example, a well-known voltage controlled oscillator (VCO)
May be used, and an amplifier for voltage amplification up to the drive voltage of the surface conduction electron-emitting device may be added if necessary.

In the image display device completed as described above, each of the electron-emitting devices thus has terminals outside the container Dox1.
Electrons are emitted by applying a voltage through Doxm and Doy1 to Doyn, and a high voltage is applied to the metal back 85 or the transparent electrode (not shown) through the high voltage terminal Hv to accelerate the electron beam and collide with the fluorescent film. Then, an image can be displayed by exciting and emitting light.

The structure described above is a schematic structure necessary for manufacturing a suitable image forming apparatus used for display and the like, and the detailed parts such as the material of each member are not limited to the above contents. Instead, it is appropriately selected to suit the application of the image forming apparatus. Also, although the NTSC system is given as an example of the input signal, the input signal is not limited to this, and PAL,
Various systems such as the SECAM system may be used, or a TV signal (for example, a high-definition TV such as the MUSE system) that includes a larger number of scanning lines may be used.

Next, the above-mentioned ladder type electron source substrate and the image display device using the same will be described with reference to FIGS. 9 and 10.
Will be explained.

In FIG. 9, 110 is an electron source substrate, and 11
1 is an electron-emitting device, and 112 of Dx1 to Dx10 are common wirings connected to the electron-emitting device. Electron-emitting device 11
A plurality of Nos. 1 are arranged in parallel in the X direction on the substrate 110 (this is called an element row). A plurality of this element row is arranged on the substrate to form a ladder type electron source substrate. By appropriately applying a drive voltage between the common wirings of each element row, each element row can be independently driven. That is, an electron beam having a voltage equal to or higher than the electron emission threshold may be applied to the element row that emits the electron beam, and a voltage equal to or lower than the electron emission threshold may be applied to the element row that does not emit the electron beam. Further, the common wirings Dx2 to Dx9 between the element rows, for example, Dx2 and Dx3 may be the same wiring.

FIG. 10 is a diagram showing the structure of an image forming apparatus provided with a ladder-type electron source. 120 is a grid electrode, 121 is a hole for passing electrons, and 122 is D
ox1, Dox2 ... Dox external terminals made of Dox, 123 is G1, G2 ... Gn connected to the grid electrode 120
The outer terminal of the container, and 124 are the electron source substrates in which the common wiring between each element row is the same wiring as described above. In addition,
6 and 9 indicate the same members. The difference from the image forming apparatus (FIG. 6) having the simple matrix arrangement described above is
The grid electrode 120 is provided between the electron source substrate 110 and the face plate 86.

A grid electrode 120 is provided between the substrate 110 and the face plate 86. The grid electrode 120 is capable of modulating the electron beam emitted from the surface conduction electron-emitting device, and passes the electron beam through the stripe-shaped electrodes provided orthogonal to the ladder-shaped element rows. A circular opening 121 is provided for each element. The shape and installation position of the grid may not necessarily be as shown in FIG. 10, and a large number of passage openings may be provided in the form of a mesh as openings. For example, the grid may be provided around or near the surface conduction electron-emitting device. Good.

The external terminal 122 and the grid external terminal 123 are electrically connected to a control circuit (not shown).

In this image forming apparatus, a modulation signal for one line of an image is simultaneously applied to the grid electrode column in synchronization with the sequential driving (scanning) of the element rows one column at a time, whereby each electron beam Control the irradiation to the phosphor and display the image 1
Can be displayed line by line.

Further, according to the present invention, it is possible to provide an image forming apparatus suitable for not only a display device for television broadcasting but also a display device such as a video conference system and a computer. Further, it can be used as an image forming apparatus as an optical printer including a photosensitive drum or the like.

[0103]

EXAMPLES Regarding the method of manufacturing the device electrode of the surface conduction electron-emitting device of the present invention, referring to FIG. 1 and FIG. 1 based on an example of manufacturing a matrix wiring type image forming apparatus using the surface conduction electron-emitting device. This will be described with reference to FIGS. 5, 6, 11, and 13.

FIG. 1 is a schematic view showing one element of the surface conduction electron-emitting device, FIG. 5 is a layout view of a simple matrix wiring type electron-emitting device, and FIG. 6 is an image formation using the substrate of FIG. Schematic configuration diagram of the apparatus, FIG. 11 is a laser processing apparatus A, FIG.
3 is a schematic view of a manufacturing process of a device electrode of the surface conduction electron-emitting device of the present invention.

First, the manufacturing method of the present invention will be specifically described with reference to FIGS. 11 and 13.

Step 1 A viscosity of about 10 was applied to the substrate 1 by a usual screen printing method.
10,000 cps Au-MOD (organic Au compound based) was printed. In the screen plate used at this time, 100 μm square squeeze patterns, which will be the device electrodes later, are arranged in a matrix, and correspondingly, a 100 μm square A pattern is formed on the substrate.
The u-MOD pattern was deposited in a matrix. Then 70
When dried at 30 ° C. for 30 minutes, the thickness of Au-MOD was about 15 μm. (FIG. 13A) Step 2 Nd: YA with Q switch similar to the configuration shown in FIG.
Using the G second harmonic laser device, the sample stage was moved and processed while irradiating the laser to almost the center of the Au-MOD pattern printed by screen printing. At this time, the laser Q-switch frequency was 10 kHz, the average output was 1.5 W, the laser beam on the sample surface was about 10 μm square by the aperture and the condenser lens, and the sample feed rate was 10 mm / sec. Then, Au-MOD was selectively removed only in the portion irradiated by the laser (FIG. 13).
(B)).

Step 3 Next, in a normal heat treatment furnace, the substrate at room temperature was heated to 580 ° C. at a temperature rising rate of 10 ° C./min, held at 580 ° C. for 10 minutes, and then cooled to room temperature at a temperature lowering rate of 10 ° C./min. did. Then
The organic component of Au-MOD was thermally decomposed and removed, and an Au film having the same shape as that of the Au-MOD before heat treatment was obtained.
However, the obtained Au film thickness was about 0.5 μm. That is, Au element electrodes having an element electrode interval L = about 10 μm and an element electrode length W = about 100 μm were formed (FIG. 13).
(C)).

Step 4 The X-direction wiring 72, the insulating film (not shown), and the Y-direction wiring 73 shown in FIG. 5 were produced by a usual printing method.

Step 5 Next, similar to the conventional surface conduction electron-emitting device, palladium acetate bis.
A suitable amount of a butyl acetate solution of a di-propylamine complex was dropped on the substrate 1, and then rapidly spin-coated at 1000 rpm for 30 seconds, and heat-treated at 300 ° C. for 10 minutes in the atmosphere.
After repeating this coating and heat treatment three times, patterning was performed to form a thin film 4 including an electron emitting portion made of PdO.

Step 6 Subsequently, energization treatment called forming treatment was performed by applying a voltage as shown in FIG. 4 between the element electrodes. At this time, as a forming voltage waveform, a rectangular wave having a pulse width T1 of 1 msec and a pulse interval T2 of 10 msec was used as a crest value of 15 V in a vacuum atmosphere. By this energization treatment, the conductive thin film 2 was locally destroyed, deformed or altered, and the electron emitting portion 3 having a changed structure was obtained.

In this way, an electron source substrate (FIG. 5) was prepared in which the surface conduction electron-emitting devices were formed in a matrix on a single substrate. In addition, face plate 86 on this substrate
An image forming apparatus (FIG. 6) was manufactured by sealing the above. These electron source substrate and image forming apparatus show the same electron emission characteristics and image display characteristics as those manufactured using the conventional manufacturing methods of element electrodes, such as vacuum film formation, photolithography, and etching. It was

Since the device electrodes were produced by the laser processing method of the present invention, large and expensive devices such as a vacuum film forming device, a mask aligner, and an etching device were reduced, and the manufacturing process was greatly simplified. The effect of cost reduction was recognized.

(Example 2) Regarding the method of manufacturing the device electrode of the surface conduction electron-emitting device of the present invention, based on an example of manufacturing a ladder wiring type image forming apparatus using the surface conduction electron-emitting device, 1, FIG. 9, FIG. 10, FIG. 11 and FIG.
Will be explained. 1 is a schematic view showing one element of a surface conduction electron-emitting device, FIG. 9 is a layout view of a ladder wiring type electron-emitting device, and FIG. 10 is a schematic configuration of an image forming apparatus using the substrate of FIG. FIG. 11 and FIG. 11 show the laser processing apparatus A and FIG.
3 is a schematic view of a manufacturing process of a device electrode of the surface conduction electron-emitting device of the present invention.

First, the manufacturing method of the present invention will be specifically described with reference to FIGS. 11 and 13.

Step 1 Pt-MOD (organic Pt compound paste) having a viscosity of about 50,000 cps was printed on the substrate 1 by a usual screen printing method. In the screen plate used at this time, 100 μm square relief patterns, which will later become element electrodes, are arranged in a matrix, and correspondingly, Pt of about 100 μm square is formed on the substrate.
-MOD patterns were deposited in a matrix. Then 90 ℃
After drying for 1 hour, the thickness of Pt-MOD was about 12 μm (FIG. 13A).

Process 2 Nd: YA with Q switch similar to the structure shown in FIG.
Using the G 2nd harmonic laser device, the sample stage was moved and processed while irradiating the laser to almost the center of the Pt-MOD pattern printed by screen printing. At this time, the laser Q-switch frequency is 10 kHz, and the average output is 3
The laser beam on the surface of the sample is set to about 8 μm square with W, the aperture and the condenser lens, and the sample feed rate is 20
mm / sec. Then, only the part irradiated by the laser P
t-MOD was selectively removed (FIG. 13 (b)).

Step 3 Next, the substrate at room temperature was heated to 650 ° C. at a temperature rising rate of 10 ° C./min in a normal heat treatment furnace, held at 650 ° C. for 10 minutes, and then cooled to room temperature at a temperature lowering rate of 10 ° C./min. did. Then
The organic components of Pt-MOD were thermally decomposed and removed, and a Pt film having substantially the same shape as the shape of Pt-MOD before heat treatment was obtained.
However, the obtained Pt film thickness was about 0.4 μm. That is, the element electrode interval L = about 8 μm, the element electrode length W = about 1
A Pt device electrode of 00 μm was formed (FIG. 13).
(C)).

Step 4 The common wiring ll2 shown in FIG. 9 was produced by a usual printing method.

Step 5 Next, similarly to the conventional surface conduction electron-emitting device, palladium acetate bis.
A suitable amount of a butyl acetate solution of a di-propylamine complex was dropped on the substrate 1, and then rapidly spin-coated at 1000 rpm for 30 seconds, and heat-treated at 300 ° C. for 10 minutes in the atmosphere. After repeating this coating and heat treatment three times, patterning was performed to form a conductive thin film 4 made of PdO.

Step 6 Subsequently, an energization process called a forming process was performed by applying a voltage as shown in FIG. 4A between the device electrodes. At this time, as a forming voltage waveform, a rectangular wave having a pulse width T1 of 1 msec and a pulse interval T2 of 10 msec was used as a crest value of 15 V in a vacuum atmosphere. By this energization treatment, the conductive thin film 4 is locally destroyed,
Electron emission part 3 whose structure has changed due to deformation or alteration
was gotten.

Thus, the electron source substrate in which the surface conduction electron-emitting devices are arranged in a ladder shape on the single substrate (FIG. 9)
Was produced. Further, the grid electrode 120, the face plate 86, and the like were sealed on this substrate to manufacture an image forming apparatus having a driving mechanism as shown in FIG. These electron source substrate and image forming apparatus show the same electron emission characteristics and image display characteristics as those manufactured using the conventional manufacturing methods of element electrodes, such as vacuum film formation, photolithography, and etching. It was

Since the device electrodes are produced by the laser processing method of the present invention, large and expensive devices such as a vacuum film forming device, a mask aligner, and an etching device are reduced, and the manufacturing process is greatly simplified. The effect of cost reduction was recognized.

(Embodiment 3) As an example of using an excimer laser device as a method of manufacturing an element electrode of a surface conduction electron-emitting device of the present invention, a ladder wiring type image forming apparatus using a surface conduction electron-emitting device is used. Based on the manufactured example, description will be made with reference to FIGS. 1, 5, 6, 12, and 13. 1 is a schematic view showing one element of a surface conduction electron-emitting device, FIG. 5 is a layout view of a matrix wiring type electron-emitting device, and FIG. 6 is a schematic configuration of an image forming apparatus using the substrate of FIG. FIG. 12 is a laser processing apparatus B, and FIG. 13 is a schematic view of the manufacturing process of the device electrode of the surface conduction electron-emitting device of the present invention.

First, the manufacturing method of the present invention will be specifically described with reference to FIGS. 12 and 13. However, since the method of applying the organic substance containing metal (step 1) and the method of removing the organic substance after laser processing (steps 4 to 6) are the same as in Example 1, they are omitted here and only step 2 is described.

Step 2 A KrF excimer laser device having the same structure as that shown in FIG. 12 was used. The oscillation frequency of the laser at this time is 200 Hz,
The average output is 10 W, and as shown in the figure, a mask capable of obtaining a desired laser beam shape is used, and the laser beam is reduced to 1/6 by an objective lens, and the laser beam on the surface of the sample is about 10 μm × 150 μm square. did. The Au-MOD pattern printed by screen printing was irradiated with 20 pulses of the laser beam at the approximate center thereof, and then the sample stage was moved to process another Au-MOD pattern by a so-called step-and-repeat method. Then, Au-MOD was selectively removed only in the portion irradiated with the laser (FIG. 12).
(B)).

In this way, an electron source substrate (FIG. 5) was prepared in which the surface conduction electron-emitting devices were formed in a matrix on a single substrate. In addition, face plate 86 on this substrate
An image forming apparatus (FIG. 6) was manufactured by sealing the above. These electron source substrate and image forming apparatus show electron emission characteristics and image display characteristics similar to those produced by the conventional manufacturing methods of element electrodes, such as vacuum film formation, photolithography, and etching. It was

However, since the laser processing method of the present invention is used, large and expensive devices such as a vacuum film forming device, a mask aligner, and an etching device are reduced, and the manufacturing process is greatly simplified. The effect of reduction was recognized.

[0128]

As described above, according to the present invention, the device electrode can be formed without using the conventional semiconductor processing techniques such as vacuum film formation, photolithography and etching. As a result, it is possible to obtain a surface conduction electron-emitting device, an electron source substrate, and an image forming apparatus by not requiring large equipment such as a vacuum device and a mask aligner in the device electrode manufacturing process and greatly simplifying the manufacturing process. The cost can be reduced.

[Brief description of drawings]

FIG. 1 is a plan view showing an example of a surface conduction electron-emitting device of the present invention.

2 is a side sectional view of the device of FIG. 1. FIG.

FIG. 3 is a process drawing showing a procedure of an example of a method of manufacturing a surface conduction electron-emitting device of the present invention.

FIG. 4 is a graph showing an example of a voltage waveform of energization forming, where (a) is a case where the pulse peak value is constant and (b) is a case where the pulse peak value is increased.

FIG. 5 is a schematic view showing an example of an electron source substrate of the present invention having a simple matrix arrangement.

FIG. 6 is a schematic perspective view showing a schematic configuration of an example of an image forming apparatus of the present invention.

FIG. 7 is a schematic partial view showing a configuration of a fluorescent film,
(A) is provided with a black stripe, (b)
[Fig. 3] is a diagram of a device provided with a black matrix.

FIG. 8 is a block diagram of a drive circuit in an example of the image forming apparatus of the present invention, which is a drive circuit for performing display in accordance with an NTSC television signal.

FIG. 9 is a schematic partial plan view of an electron source having a ladder arrangement.

FIG. 10 is a schematic perspective view showing a schematic configuration of another example of the image forming apparatus of the present invention.

FIG. 11 is a schematic view showing an example of a laser processing apparatus (apparatus A) used in the element manufacturing method of the present invention.

FIG. 12 is a schematic view showing an example of a laser processing apparatus (apparatus B) used in the element manufacturing method of the present invention.

FIG. 13 is a process drawing showing the manufacturing procedure of the device electrode in the device manufacturing method of the present invention.

FIG. 14 is a plan view showing a schematic configuration of an example of a conventional surface conduction electron-emitting device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 substrate 2, 3 element electrode 4 conductive thin film 5 electron emission part 21 step forming part 50 ammeter 51 power supply 53 high voltage power supply 54 anode electrode 55 ammeter 56 vacuum device 57 exhaust pump 71 electron source substrate 72 X-direction wiring 73 Y direction Wiring 74 Surface-conduction type electron-emitting device 75 Connection 81 Rear plate 82 Support frame 83 Glass substrate 84 Fluorescent film 85 Metal noback 86 Face plate 87 High voltage terminal 88 Envelope 91 Black member 92 Phosphor 93 Glass substrate 10l Display panel 102 Scanning circuit 103 Control Circuit 104 Shift Register 105 Line Memory 106 Synchronous Signal Separation Circuit 107 Modulation Signal Generator 110 Electron Source Substrate 111 Electron Emitting Element 112 Common Wiring 120 Grid Electrode 121 Holes for Electrons to Pass 122 Outer Container Terminal 123 Outer Container End 124 an electron source substrate 125 a laser oscillator 126 laser beam 127 mirror 128 an aperture 129 lens 130 substrate 131 XY stage 132 mask 133 lens 134 element electrodes formed by film 136 laser beam 137 laser processing liquid containing the XY stage 135 metal elements

Claims (9)

[Claims] 1. A surface conduction electron-emitting device comprising a step of forming at least one pair of electrodes on a substrate, forming a conductive thin film between the electrodes, and forming an electron-emitting portion on the thin film. In the manufacturing method, the electrode pair is formed by depositing a liquid containing a metal element on a substrate, shaping the deposit containing the metal element by laser irradiation, and then adding a component other than the metal element. A method for manufacturing a surface conduction electron-emitting device, which is performed by removing it to form a metal film. 2. The manufacturing method according to claim 1, wherein the liquid containing the metal element is deposited by a printing method. 3. The liquid containing a metal element is a mixed material in which particles of the metal are dispersed in a liquid medium.
The manufacturing method described. 4. The method according to claim 1, wherein the liquid containing the metal element is a liquid in which an organic compound having the metal element in the molecule by a chemical bond is dissolved in a liquid medium. 5. A step of forming a plurality of surface conduction electron-emitting devices by the manufacturing method according to any one of claims 1 to 4, and a plurality of electrode pairs via row-direction wiring and an insulating layer. A method of manufacturing an electron source substrate, the method comprising the steps of: connecting by means of column-direction wirings stacked in layers. 6. A rear plate having the electron source substrate according to claim 5 and a face plate having a fluorescent film are joined via a support frame so that both plates face each other, and at least a drive circuit is connected. A method of manufacturing an image forming apparatus including steps. 7. A surface conduction electron-emitting device manufactured by the method according to claim 1. Description: 8. An electron source substrate manufactured by the method of claim 5. 9. An image forming apparatus manufactured by the method according to claim 6.