JPH08186376A - High-density thin-film multilayer wiring board, its mounting structure, and its manufacturing method - Google Patents

Abstract

(57) [Summary] [Object] An object of the present invention is to provide a high-density thin-film multilayer wiring board capable of manufacturing a high-density thin-film multilayer wiring board such as a multi-chip module used in a computer with high reliability and at low cost. It is to provide a method of manufacturing a substrate and a high-density thin-film multilayer wiring substrate. [Constitution] The present invention has a thickness of 10 to 30 μm on the surface side,
A wiring pattern 4 containing Cu, Au, or Al as a main component is formed, the back surface has a thickness of 10 to 30 μm, a relative dielectric constant of 2.2 to 4.0, and a linear expansion with the wiring pattern after curing. The thickness of the adhesive layer 5 having a difference from the dielectric constant of 8 ppm / ° C. or less is 10 to 50 μm, and the relative dielectric constant is 2.2 to 4.
0, the difference from the coefficient of linear expansion with the wiring pattern after curing is 8
Organic resin film (polymer film) below ppm / ℃
The high-density thin-film multilayer wiring board 20 is manufactured by stacking the organic resin film constructs 15 including 2 and performing interlayer adhesion and curing of the adhesive layers by thermocompression bonding.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-density thin-film multilayer wiring board such as a multi-chip module used in a computer and the like, a mounting structure thereof and a manufacturing method thereof.

[0002]

2. Description of the Related Art As a conventional technique, a coefficient of thermal expansion of 4 × 10 to ^{5 is provided on} at least one surface of a substrate formed of an Fe--Ni alloy.
Insulating layer consisting of polyimide film below / ° C and thickness 2
.mu.m Al wiring conductor layers are alternately stacked, and the wiring conductors are connected by the conductors filled in the through holes, and the insulating layer is connected to the substrate or the wiring conductors to obtain a coefficient of thermal expansion of 4.times.
A multilayer wiring board adhered with a polyimide resin adhesive layer of 10 to ⁵ ° C. or less is known in JP-A-61-212096. This conventional multilayer wiring board is described in Japanese Patent Application Laid-Open No. 5-82972.

As a prior art, polyester laminated films are known in JP-A-57-95454 and JP-A-57-144752.

The prior art has one or more wiring layers and has a coefficient of thermal expansion of 3 × 10 to ⁵ as an insulating material between wirings.
Regarding a wiring board for a module on which an LSI chip using a polyimide of / K or less is mounted, see JP-A-61-1761.
It is known from Japanese Patent Publication No. 96.

As a conventional technique, Japanese Patent Laid-Open No. 62-512
Japanese Patent Laid-Open No. 94 and Japanese Patent Laid-Open No. 5-251626 are known.

[0006]

In recent years, as the performance of computers has become higher, the performance of boards for mounting LSIs has been required, and multi-chip module boards using thin film multilayer wiring have been used in place of conventional printed boards. It became like. In the above-mentioned prior art, a high-density thin-film multilayer wiring board such as a multi-chip module which can be manufactured at low cost without lowering the transmission speed so that it can be used in a computer and the like, and a manufacturing method thereof. Was not considered.

An object of the present invention is to solve the above problems.
High-density thin-film multi-layer wiring that enables high-density thin-film multi-layer wiring boards such as multi-chip modules that ensure high reliability without lowering the transmission speed so that they can be used in computers, etc. It is to provide a method for manufacturing a substrate.

Another object of the present invention is to provide a multi-chip module having a simplified structure with a high wiring density and a high reliability without lowering the transmission speed so that it can be used in a computer or the like. To provide a high-density thin-film multilayer wiring board.

Another object of the present invention is to provide L on the surface side of a high density thin film multilayer wiring board such as a multi-chip module.
Another object of the present invention is to provide a mounting structure for a high-density thin-film multilayer wiring board, which is mounted with SI and can be directly mounted on the printed board on the back side.

[0010]

In order to achieve the above object, the present invention forms a wiring pattern having a thickness of 5 μm to 30 μm on the front surface side and a thickness of 10 μm to 30 μm on the back surface side.
And an organic resin film construct having an organic resin film having a relative dielectric constant of 2.2 to 4.0 and having a thickness of 10 μm to 50 μm formed by forming an adhesive layer having a relative dielectric constant of 2.2 to 4.0. ,
A high-density thin-film multilayer wiring board is manufactured by stacking and thermo-compressing to perform interlayer adhesion and curing of an adhesive layer to manufacture a high-density thin-film multilayer wiring board.

According to the present invention, the thickness of the surface side is 5 μm to 3 μm.
A wiring pattern containing Cu, Au, or Al as a main component is formed with a thickness of 0 μm, and a thickness of 10 μm to 3 on the back surface side.
0 μm, a relative dielectric constant of 2.2 to 4.0, a difference in linear expansion coefficient from the wiring pattern after curing of 8 ppm / ° C. or less with an adhesive layer formed is 10 μm to 50 μm, An organic resin film structure having an organic resin film having a rate of 2.2 to 4.0 and a coefficient of linear expansion after curing that is 8 ppm / ° C. or less is laminated and laminated by thermocompression bonding. And a method of manufacturing a high-density thin-film multilayer wiring board by curing an adhesive layer to manufacture a high-density thin-film multilayer wiring board.

In the method for manufacturing a high-density thin-film multilayer wiring board according to the present invention, the organic resin film constituents are laminated and subjected to interlayer adhesion by thermocompression and curing of the adhesive layer, and then an upper wiring pattern is formed. It is characterized in that through-hole wiring connection is performed with the lower layer wiring pattern.

Further, according to the present invention, the thickness of the surface side is 5 μm to 3 μm.
A wiring pattern containing Cu, Au, or Al as a main component is formed with a thickness of 0 μm, and a thickness of 10 μm to 3 on the back surface side.
Monomer or oligomer of epoxy polymer, benzocyclobutene polymer, benzotriazine polymer or maleimide polymer, and monomer or oligomer of the polymer and polyimide with 0 μm and relative permittivity of 2.2 to 4.0 Alternatively, an adhesive layer made of a mixture of polyetherimide, polyesterimide, polyamideimide, polyetheretherketone, polysulfone, polycarbonate, liquid crystal polymer, or polyfluorocarbon is formed and has a thickness of 10 μm to 50 μm and a relative dielectric constant of 2.2. ~
A high-density thin-film multilayer wiring board, characterized in that a high-density thin-film multilayer wiring board is manufactured by stacking polymer film constituents having a 4.0 polymer film, and performing thermoadhesion to perform interlayer adhesion and curing of the adhesive layer. Is a manufacturing method.

In the method for manufacturing a high-density thin-film multilayer substrate according to the present invention, the polymer film has a breaking elongation by a tensile test of 5% or more, preferably 10% or more as a property other than a coefficient of thermal expansion. The heat resistance (weight reduction start temperature) to the soldering process when connecting the element is 150 ° C. or higher, preferably 200 ° C. or higher.

And as the material of the polymer film,
Specifically, polyimide, polyetherimide, polyesterimide, polyamideimide, polyetheretherketone, polysulfone, polycarbonate, liquid crystal polymer, polyfluorocarbon, epoxy polymer, benzocyclobutene polymer, benzotriazine polymer, maleimide polymer. Or a mixture of these. Among them,
Polyimide is most suitable because the toughness against elongation, high heat resistance, and coefficient of thermal expansion can be controlled by the molecular structure and compounding ratio of the monomer.

Copper is generally used for the wiring pattern, but gold, aluminum, or the like can be used instead. In addition, various metals, oxides, organic substances and the like can be used as additives or as a protective layer in order to improve adhesiveness and corrosion resistance.

As the adhesive layer, in addition to limiting the coefficient of thermal expansion,
The heat resistance of the cured film (starting temperature for weight loss) is 15
0 ° C or higher, preferably 200 ° C or higher, relative permittivity of 2.2 to 4.0, fracture elongation of 5% or higher, preferably 10%
The above-mentioned thermosetting resin or thermoplastic resin is suitable. Further, it is desirable that the temperature at which the substrate is melted or fluidized when it is not cured (B stage) and the curing temperature are lower than the heat resistant temperature of the substrate film. Specifically, an epoxy polymer, a benzocyclobutene polymer, a benzotriazine polymer, a monomer or oligomer of a maleimide-based polymer, and a polyimide and polyether imide thereof,
It is a mixture of polyester imide, polyamide imide, polyether ether ketone, polysulfone, polycarbonate, liquid crystal polymer and polyfluorocarbon. Further, for the purpose of adjusting the coefficient of thermal expansion and ensuring the mechanical strength, it is also effective to mix short fibers or particles such as polyimide, polyamide, various ceramics and oxides as a filler.

According to the present invention, the thickness of the surface side is 5 μm to 3 μm.
A wiring pattern containing Cu, Au, or Al as a main component is formed with a thickness of 0 μm, and a thickness of 10 μm to 3 on the back surface side.
Monomer or oligomer of epoxy polymer, benzocyclobutene polymer, benzotriazine polymer or maleimide polymer, and monomer or oligomer of the polymer and polyimide with 0 μm and relative permittivity of 2.2 to 4.0 Alternatively, an adhesive layer made of a mixture of polyetherimide, polyesterimide, polyamideimide, polyetheretherketone, polysulfone, polycarbonate, liquid crystal polymer, or polyfluorocarbon is formed and has a thickness of 10 μm to 50 μm and a relative dielectric constant of 2.2. ~
4.0, polyimide, polyetherimide, polyetherimide, polyesterimide, polyamideimide, polyetheretherketone, polysulfone, polycarbonate, liquid crystal polymer, polyfluorocarbon, epoxy polymer, benzocyclobutene polymer, benzotriazine polymer Alternatively, a high-density thin-film multilayer wiring board is manufactured by laminating polymer film constituents having a polymer film made of a maleimide-based polymer or a mixture thereof, and performing interlayer adhesion and thermosetting of the adhesive layer by thermocompression bonding. And a method for manufacturing a high-density thin film multilayer wiring board.

Further, according to the present invention, the thickness on the surface side is 5 μm to 3 μm.
A wiring pattern containing Cu, Au, or Al as a main component is formed with a thickness of 0 μm, and a thickness of 10 μm to 3 on the back surface side.
0 μm, a relative dielectric constant of 2.2 to 4.0, and a difference in linear expansion coefficient from the wiring pattern after curing to 8 ppm / ° C. or less to obtain an epoxy polymer, a benzocyclobutene polymer, or a benzotriazine polymer. From a mixture of a monomer or oligomer of a polymer or a maleimide-based polymer and a monomer or oligomer of the polymer and a polyimide, a polyetherimide, a polyesterimide, a polyamideimide, a polyetheretherketone, a polysulfone, a polycarbonate, a liquid crystal polymer or a polyfluorocarbon. The thickness of the adhesive layer formed is 10 μm to 50 μm, the relative dielectric constant is 2.2 to 4.0, and the difference between the linear expansion coefficient of the cured wiring pattern and that of the wiring pattern is 8 ppm / ° C. or less. Polite Imide, polyether imide, polyester imide, polyamide imide, polyether ether ketone, polysulfone, polycarbonate, liquid crystal polymer, polyfluorocarbon, epoxy polymer, benzocyclobutene polymer, benzotriazine polymer, maleimide polymer, or these A high-density thin-film multilayer wiring board, characterized in that a high-density thin-film multilayer wiring board is manufactured by stacking polymer film constituents having a polymer film composed of a mixture, and performing thermoadhesion to perform interlayer adhesion and curing of the adhesive layer. Is a manufacturing method.

The present invention has a thickness of 5 μm to 30 μm on the surface side.
m, a wiring pattern containing Cu, Au, or Al as a main component is formed, and the thickness is 10 μm to 30 μm on the back surface side.
m, the relative dielectric constant is 2.2 to 4.0, and the difference from the linear expansion coefficient with the wiring pattern after curing is set to 8 ppm / ° C. or less,
Monomers or oligomers of epoxy polymers, benzocyclobutene polymers, benzotriazine polymers or maleimide-based polymers, and monomers or oligomers of the above polymers with polyimides or polyetherimides or polyesterimides or polyamideimides or polyetheretherketones or An adhesive layer formed of a mixture of polysulfone, polycarbonate, liquid crystal polymer, or polyfluorocarbon has a thickness of 10 to 50 μm, a relative dielectric constant of 2.2 to 4.0, and a coefficient of linear expansion with the wiring pattern after curing. With a difference of 8 ppm / ° C. or less, a polymer film structure having a polymer film made of polyimide is laminated, and interlayer adhesion and curing of the adhesive layer are performed by thermocompression bonding to achieve high-density thin-film multilayer wiring. A method for producing a high-density thin-film multilayer wiring board, which comprises producing a plate.

The present invention also provides the method of manufacturing a high-density thin-film multilayer wiring board according to the above-mentioned polymer film structure,
It is characterized in that after the layers are laminated and the interlayer adhesion and curing of the adhesive layer are performed by thermocompression bonding, through-hole wiring connection is performed between the upper layer wiring pattern and the lower layer wiring pattern.

Further, according to the present invention, a solution of a polyimide precursor is applied on a copper foil having a thickness of 10 μm to 30 μm and cured by heating to have a thickness of 10 μm to 50 μm and a relative dielectric constant of 2.2 to 2.2.
Wiring pattern for copper foil in the polyimide film with copper foil produced by the step of producing a polyimide film with copper foil for producing a polyimide film with copper foil comprising a polyimide film of 4.0 and the polyimide film with copper foil And having a thickness of 10 μm to 30 μm and a relative dielectric constant of 2.
2 to 4.0, a polyimide film structure producing step for forming a polyimide film structure by forming an adhesive layer having a difference in linear expansion coefficient from the wiring pattern after curing of 8 ppm / ° C. or less, and the polyimide film structure. And a thermocompression bonding step of manufacturing the high-density thin-film multilayer wiring board by laminating the polyimide film constituents obtained in the body forming step and performing interlayer adhesion and curing of the adhesive layer by thermocompression bonding. A method for manufacturing a high-density thin-film multilayer wiring board.

The present invention also has a thickness of 10 μm to 50 μm.
Then, a polyimide film with a copper thin film for forming a polyimide film with a copper thin film by forming a copper thin film with a thickness of 5 μm to 30 μm on a polyimide film made of a polyimide precursor having a relative dielectric constant of 2.2 to 4.0 In the forming step and the polyimide film with a copper film formed by the copper thin film-containing polyimide film forming step, a wiring pattern is formed on the copper thin film, and the thickness is 10 μm to 30 μm on the side facing the copper thin film side. And the relative permittivity is 2.2 to
A polyimide film constructing step of obtaining an polyimide film construct by forming an adhesive layer having a difference in linear expansion coefficient between the cured wiring pattern and the wiring pattern of 8 ppm / ° C. or less at 4.0, and producing the polyimide film construct High density characterized by including a lamination / thermocompression bonding step of manufacturing the high-density thin-film multilayer wiring board by laminating the polyimide film structure obtained in the step, and performing interlayer adhesion and curing of the adhesive layer by thermocompression bonding. It is a method of manufacturing a thin film multilayer wiring board.

The present invention also provides a copper foil having a thickness of 10 μm to 30 μm, a thickness of 10 μm to 50 μm, and a relative dielectric constant of 2.
With a copper foil-made polyimide film producing step of making a polyimide film with a copper foil by adhering a polyimide film comprising a polyimide precursor of 2 to 4.0, and a copper foil produced by the copper foil-containing polyimide film producing step In the polyimide film, a wiring pattern is formed on the copper foil, and a thickness of 10 is formed on the side facing the copper foil side.
μm to 30 μm, relative permittivity of 2.2 to 4.0, difference in linear expansion coefficient from the wiring pattern after curing is 8 ppm / ° C.
A polyimide film structure forming step of forming a polyimide film structure by forming the following adhesive layer, and the polyimide film structure obtained in the polyimide film structure forming step is laminated to form an interlayer adhesion and an adhesive layer by thermocompression bonding. A method for manufacturing a high-density thin film multilayer wiring board, comprising: a lamination / thermocompression bonding step of curing to manufacture a high-density thin film multilayer wiring board.

According to the present invention, in the method for manufacturing a high density thin film multilayer wiring board, through hole wiring is provided between an upper layer wiring pattern and a lower layer wiring pattern in the high density thin film multilayer wiring board obtained in the stacking / thermocompression bonding step. And a through hole wiring connecting step for connecting.

Further, according to the present invention, the thickness on the surface side is 5 μm to 3 μm.
Form a wiring pattern of 0 μm and have a thickness of 10 μm on the back side.
m to 30 μm, a thickness of 5 to 50 μm formed by forming an adhesive layer having a relative dielectric constant of 2.2 to 4.0, and a relative dielectric constant of 2.2 to
A high-density thin-film multilayer wiring board is characterized in that an organic resin film construct having a polymer film of 4.0 is laminated and formed by interlayer adhesion and curing of an adhesive layer.

Further, according to the present invention, the thickness on the surface side is 5 μm to 3 μm.
Form a wiring pattern of 0 μm and have a thickness of 10 μm on the back side.
The thickness of the adhesive layer having a relative dielectric constant of 2.2 to 4.0 is 10 μm to 50 μm, and the relative dielectric constant is 2.
An organic resin film constituent having a polymer film of 2 to 4.0 is laminated and formed by interlayer adhesion and curing of an adhesive layer, and through-hole wiring connection is made between an upper wiring pattern and a lower wiring pattern. It is a high-density thin film multilayer wiring board.

Further, according to the present invention, the thickness on the surface side is 5 μm to 3 μm.
Form a wiring pattern of 0 μm and have a thickness of 10 μm on the back side.
m to 30 μm, a relative dielectric constant of 2.2 to 4.0, and a thickness of 10 μm to 50 μm on which an adhesive layer having a difference in linear expansion coefficient from the wiring pattern after curing of 8 ppm / ° C. or less is formed. An organic resin film structure having a relative dielectric constant of 2.2 to 4.0 and a difference in linear expansion coefficient from the wiring pattern after curing of 8 ppm / ° C. or less is used for interlayer adhesion and curing of an adhesive layer. The high-density thin-film multilayer wiring board is characterized in that through-hole connection is made between the upper layer wiring pattern and the lower layer wiring pattern.

Further, according to the present invention, the thickness on the surface side is 5 μm to 3 μm.
Form a wiring pattern of 0 μm and have a thickness of 10 μm on the back side.
The thickness of the adhesive layer having a relative dielectric constant of 2.2 to 4.0 is 10 μm to 50 μm, and the relative dielectric constant is 2.
A high-density thin film in which an organic resin film constituent having a polymer film of 2 to 4.0 is laminated by interlayer adhesion and curing of an adhesive layer, and through-hole wiring is connected between an upper wiring pattern and a lower wiring pattern. A high-density thin film multilayer wiring board is provided with a LS
It is a high-density thin-film multilayer wiring board mounting structure characterized by being formed by mounting I.

The present invention also has a thickness of 5 μm to 3 on the surface side.
Form a wiring pattern of 0 μm and have a thickness of 10 μm on the back side.
The thickness of the adhesive layer having a relative dielectric constant of 2.2 to 4.0 is 10 μm to 50 μm, and the relative dielectric constant is 2.
A high-density thin film in which an organic resin film constituent having a polymer film of 2 to 4.0 is laminated by interlayer adhesion and curing of an adhesive layer, and through-hole wiring is connected between an upper wiring pattern and a lower wiring pattern. A high-density thin film multilayer wiring board is provided with a multi-layer wiring board
Is mounted, and the back side of the high-density thin-film multilayer wiring board is directly mounted on a printed circuit board, which is a high-density thin-film multilayer wiring board mounting structure.

[0031]

With the above structure, a multi-chip that can be used in a computer or the like, has the same impedance as that of a wiring pattern and does not reduce the transmission speed, and also increases the wiring density, eliminates warpage, and ensures reliability. A high-density thin-film multilayer wiring board such as a module can be easily manufactured at low cost.

Further, the thickness of the poly film and the adhesive layer is set to be approximately the same as the thickness of the wiring pattern such as Cu,
Moreover, the relative permittivity of the poly film and the adhesive layer is 2.2 to
By setting the value to 4.0, the impedance can be made approximately the same as that of the wiring pattern and the transmission speed can be increased.

Further, when a poly film structure having a wiring pattern such as Cu and an adhesive layer is laminated and subjected to interlayer adhesion by thermocompression and curing of the adhesive layer, curling occurs due to a difference in linear expansion coefficient. Can be prevented, and as a result, the lamination adhesion of the polyfilm structure can be facilitated. Further, by preventing uneven expansion and contraction of the polyfilm structure and reducing the deviation of the wiring pattern, it becomes possible to make the land pattern small and improve the wiring density.

As described above, a high density thin film multilayer wiring board such as a multi-chip module that can be used in a computer can be easily manufactured at low cost. Further, it is possible to obtain a high-density thin-film multilayer wiring board such as a high-density multi-chip module having high reliability that can be used in a computer or the like.

By mounting a high-density thin-film multilayer wiring board such as a multi-chip module directly on a printed board, a very expensive ceramic wiring board can be eliminated.

[0036]

EXAMPLES Examples of a high-density thin film multilayer substrate such as a multi-chip module and a manufacturing method thereof according to the present invention will be specifically described with reference to the drawings.

FIG. 1 is a sectional view showing a high density thin film multilayer substrate such as a multi-chip module according to the present invention and a manufacturing process thereof. That is, as shown in FIG.
A solution of a polyimide precursor (hereinafter referred to as a polyimide varnish) is applied onto a copper foil 1 having a thickness of 0 to 30 μm (most preferably 15 to 25 μm, for example, 18 μm) by a curtain coater. Then, using a warm air circulation type bake furnace (HC-40H manufactured by Chuo Kaken), 140 ° C, 200 ° C, 3
A polyimide film with a copper foil was prepared by heat curing at 50 ° C. for 30 minutes each. The polyimide varnish used here has a low thermal expansion coefficient, and the linear expansion coefficient (thermal expansion coefficient) of the polyimide film 2 alone is 17 ppm / ° C. The thickness of the polyimide film 2 is about 10 to 50 μm (most preferably 15 to 25 μm, which is almost the same as the thickness of the copper foil 1).
For example, it is 20 μm), and the impedance is set to the same level without being significantly lowered from the wiring pattern formed from the copper foil. The relative permittivity of the polyimide film 2 is
It is 2.2 to 4.0, and for example, glass or the like for increasing the relative dielectric constant is not mixed.

Next, as shown in FIG. 1B, a film resist is adhered to the copper foil 1 side by a laminator, and predetermined exposure and development operations are performed to form a wiring pattern 3 of the film resist. Using the wiring pattern 3 of the film resist as a mask, a ferric chloride solution is used to form a copper foil 1
Is etched, washed with water and dried, and the wiring pattern 3 of the film resist is peeled off to have a line width of 20 to 30 μm and a wiring interval of 4
A polyimide film with a wiring pattern 4 of 0 to 50 μm was formed.

Next, as shown in FIG. 1 (c), an adhesive composed of a mixture of a monomer or oligomer of an epoxy polymer and a polyimide or a polyamide is applied to the surface of the polyimide film 2 where the wiring pattern 4 is not provided by a curtain coater. Applied by hot air circulation type bake oven to 90
After drying at 30 ° C. for 30 minutes, a B-stage adhesive layer 5 having a film thickness of 10 to 30 μm (most preferably 15 to 25 μm, for example, 20 μm) and a relative dielectric constant of 2.2 to 4.0 was formed. The linear expansion coefficient of the polyimide film structure 15 obtained by thermosetting only the adhesive was 20 ppm / ° C.

As described above, the polyimide film structure 15 having the wiring pattern 4 on the surface of the polyimide film 2 and the adhesive layer 5 on the back surface was formed.

Next, this polyimide film structure 15
The required number of layers is prepared, and the jig 6 is used as shown in FIG.
The guide pins 7 and the guide holes 8 formed in the polyimide film structure 15 are used for alignment and lamination.
In this embodiment, 10 layers are laminated. The warpage of the polyimide film structure 15 before lamination was 5 mm per 10 cm, and alignment and lamination could be performed without problems. Here, the adhesive layer 5 is not formed only on the lowermost polyimide film structure, and the copper wiring patterns 4 are formed on both surfaces.

Next, laminated polyimide film structure 1
5 was continuously hot-pressed at 140 ° C. for 30 minutes and 230 ° C. for 1 hour in a vacuum atmosphere at a press pressure of 1 GPa using a hydraulic press device to perform interlayer adhesion and curing of the adhesive layer.

Next, as shown in FIG. 1 (e), a 100 μm diameter is drilled on a predetermined portion of the pressed laminate.
m through holes 9 were formed, and solder resists 10 were formed on both surfaces. Predetermined exposure and development were performed to remove the resist on the surface of the pad 11, and the solder resist was thermally cured. Next, after roughening and activating the side wall of the through hole 9, electroless plating was performed to form the electrical connection 12 of the wiring pattern between the layers. When the cross section of the high-density thin-film multilayer wiring board 20 manufactured in this way was observed, non-uniform expansion and contraction was not observed. As explained above,
It is possible to obtain a high-density thin-film multilayer wiring board 20 such as a multi-chip module used in a computer or the like. Figure 2
As shown in, a solder connection pad 21 connected to the wiring pattern 4 is formed on the uppermost layer surface of the high-density thin-film multilayer wiring board 20, and a large number of LSIs 22 are mounted by solder connection with the connection pad 21. . Further, solder connection pads connected to the wiring pattern 4 are formed on the back surface of the lowermost layer of the high-density thin-film multilayer wiring board 20, for example, connection pins 23 are soldered on the connection pads, and the connection pins 23 are connected to the printed board 24. Connect with.

Next, the allowable range of the difference in the coefficient of thermal expansion of the organic resin used for the wiring pattern 4, the insulating layer (polyimide film) 2 and the adhesive layer 5 will be described. That is, in FIG. 3, the thermal stress σ generated when the polyimide film 2 having a thickness of 20 μm is formed on the copper foil 1 having a thickness of 18 μm is obtained from the following formula (Equation 1), and the thermal stress σ is generated. The warp amount d is calculated by the following formula (Formula 2).

[0045]

[Equation 1]

[0046]

[Equation 2]

Here, a is the warp measurement length, Es is the Young's modulus of the copper foil, Ef is the Young's modulus of the polyimide, ts is the thickness of the copper foil, tf is the thickness of the polyimide, ΔT is the temperature difference in the process, αs is the coefficient of thermal expansion of the copper foil, αf is the coefficient of thermal expansion of the polyimide, and νs and νf are the Poisson's ratios of the copper foil and the polyimide. Typical physical properties of copper foil and polyimide are Es = 110 GPa and Ef = 3.3 GP.
a, νs = 0.25, νf = 0.25, αs = 17.8
ppm / ° C was used. The size of the film was 0.1 m. ΔT is the temperature difference between the heating temperature and the room temperature in various steps, but 200 ° C. was used here.

From FIG. 3, the amount of warpage of the film increases as the coefficient of thermal expansion of the polyimide deviates from the coefficient of thermal expansion of the copper foil. Since there is no great difference in mechanical properties between materials other than polyimide, the results are almost the same as in FIG. In addition, the above copper-polyimide laminated film has a thickness of 2
When the 0 μm adhesive layer 5 is laminated, there is no significant difference in Young's modulus and Poisson's ratio between the polyimide and the adhesive layer, and the Young's modulus of the copper foil is 3 more than that of the polyimide.
Since the influence of polyimide on the warp is almost negligible, the increase in the warp caused by stacking the adhesive layers can be considered to be almost the same as that in FIG. If the amount of warpage of the film structure 15 exceeds 10-15 mm per 100 mm, it may be difficult to attach the film structure 15 to the laminating jig 6, so that the thermal expansion coefficient of the polyimide film 2 and the adhesive layer 5 relative to the copper foil 1 after curing may be reduced. The difference must be 8 ppm / ° C or less, preferably 5 ppm / ° C or less. The above is that the metal used for the wiring pattern 4 is gold other than copper,
The same applies to aluminum and the like. In addition, various metals, oxides, and organic substances can be used as additives or protective layers in order to improve adhesiveness and corrosion resistance.

The polyimide film 2 in the above embodiment may be made of a material having the following characteristics. That is, as a property other than the coefficient of thermal expansion, the fracture elongation by a tensile test is 5% or more, preferably 10% or more, and the heat resistance (gravity reduction start temperature) to the soldering process when connecting elements such as the LSI 22 is 150. ℃ or more, preferably 200 ℃ or more, the relative dielectric constant is 2.2
~ 4.0, thickness 10-50 μm (most preferably 1
A polymer film of 5 to 25 μm) in which glass or the like is not mixed is effective. Specifically, polyimide, polyether imide, polyester imide, polyamide imide,
Polyether ether ketone, polysulfone, polycarbonate, liquid crystal polymer, polyfluorocarbon, epoxy polymer, benzocyclobutene polymer, benzotriazine polymer, maleimide polymer, or a mixture thereof. Among them, polyimide is most suitable because the toughness against elongation, high heat resistance and coefficient of thermal expansion can be controlled by the molecular structure and compounding ratio of the monomer. It is necessary to reduce the relative permittivity to 2.2 to 4.0 and increase the signal transmission rate without mixing glass or the like into the polymer film.

As the adhesive layer 5 in the above embodiment,
You may comprise from the material which has the following characteristics. That is, in addition to limiting the coefficient of thermal expansion, the heat resistance (weight reduction start temperature) of the film structure 15 after curing is 150 ° C. or higher, preferably 200 ° C. or higher, and the relative dielectric constant is 2.2 to 4.0. Film thickness at which the breaking elongation is 5% or more, preferably 10% or more
A thermosetting resin or thermoplastic resin of 30 μm (most preferably 15 to 25 μm) is suitable. Further, it is desirable that the temperature at which the polyimide film (base polymer film) 2 is melted or fluidized and the curing temperature when it is not cured (B stage) is lower than or equal to the heat resistant temperature of the polyimide film (base polymer film) 2. Specifically, epoxy polymers, benzocyclobutene polymers, benzotriazine polymers, maleimide-based monomers or oligomers, and polyimides, polyetherimides, polyesterimides, polyamideimides, polyetheretherketones, polysulfones. , Polycarbonate, liquid crystal polymer, and polyfluorocarbon. Further, for the purpose of adjusting the coefficient of thermal expansion and ensuring the mechanical strength, it is also effective to mix short fibers or particles such as polyimide, polyamide, various ceramics and oxides as a filler. However, even in the adhesive layer 5,
In order to increase the signal transmission speed, it is necessary to set the relative dielectric constant to 2.2 to 4.0 without mixing glass or the like. Further, in the embodiment shown in FIG. 1, after forming the wiring pattern 4 on the copper foil 1, the adhesive layer 5 was formed on the surface of the polyimide film 2 where the wiring pattern 4 was not formed, but the wiring pattern 4 of the polyimide film 2 was not formed. The wiring pattern 4 may be formed on the copper foil 1 after forming the adhesive layer 5 on the surface.

In the example shown in FIG. 1, a solution of a polyimide precursor (hereinafter referred to as a polyimide varnish) was applied on the copper foil 1 and heat-cured to prepare a polyimide film with a copper foil. However, a copper thin film having a thickness of 5 to 30 μm (most preferably 10 to 20 μm) is formed on the polyimide film (polymer film) 2 by sputtering, and then exposed and developed to perform wiring pattern 4
May be formed.

According to the embodiments described above, in the polymer film structure having the wiring pattern on the front surface of the polymer film and the adhesive layer on the back surface of the polymer film, the coefficient of thermal expansion of the wiring pattern, the adhesive layer and the polymer film. It is possible to prevent the occurrence of curl due to the difference between the two and facilitate the lamination and thermocompression bonding of the polymer film structure 15. or,
It is possible to prevent uneven expansion and contraction when the polymer film structure 15 is heat-pressed and improve the positional accuracy of the wiring pattern, and as a result, it is possible to increase the density of the wiring pattern.

[0053]

According to the present invention, a high-density thin-film multi-layer wiring for a multi-chip module or the like, in which the wiring density is increased and the reliability is ensured without lowering the signal transmission rate so that it can be used in a computer or the like. The substrate can be manufactured at low cost.

Further, according to the present invention, a multi-chip module or the like having a simplified structure which does not reduce the signal transmission rate so that it can be used in a computer, etc. It is possible to realize a high-density thin-film multilayer wiring board.

Further, according to the present invention, the LSI is provided on the front surface side.
Is mounted, and the back side has an effect that it can be directly mounted on a printed circuit board.

[Brief description of drawings]

FIG. 1 is a process sectional view showing an embodiment of a method for manufacturing a high-density thin-film multilayer wiring board according to the present invention.

FIG. 2 is a partial front view showing an embodiment in which a high-density thin-film multilayer wiring board mounting an LSI according to the present invention is mounted on a printed board.

FIG. 3 is a diagram showing the relationship between the coefficient of thermal expansion of polyimide and the warpage of the film in the copper wiring pattern and the polyimide two-layer film according to the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Copper foil, 2 ... Polyimide film, 4 ... Wiring pattern, 5 ... Adhesive layer 6 ... Laminating jig, 7 ... Positioning guide pin at the time of lamination, 8 ...
Positioning guide hole 9 ... Through hole, 10 ... Solder resist, 11 ... Pad, 1
2 ... Interlayer connection part 15 ... Polyimide film structure (polymer film structure) 20 ... High density thin film multilayer wiring board, 22 ... LSI, 24 ...
Printed board

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Internal reference number FI Technical display location C09J 5/06 JGV H05K 3/38 E 7511-4E // C09J 7/02 JHR JJR JLE JLH (72 ) Inventor Hideo Togawa 292 Yoshida-cho, Totsuka-ku, Yokohama, Kanagawa, Ltd., Institute of Industrial Science, Hitachi, Ltd. (72) Masayuki Kyoi, 292, Yoshida-cho, Totsuka-ku, Yokohama, Kanagawa, Ltd.

Claims (17)

[Claims] 1. A wiring pattern having a thickness of 5 μm to 30 μm is formed on the front surface side, and a thickness of 10 μm to 30 μm is formed on the back surface side.
And an organic resin film construct having an organic resin film having a relative dielectric constant of 2.2 to 4.0 and having a thickness of 10 μm to 50 μm formed by forming an adhesive layer having a relative dielectric constant of 2.2 to 4.0. ,
A method for manufacturing a high-density thin-film multilayer wiring board, which comprises stacking and thermo-compressing to perform interlayer adhesion and curing of the adhesive layer to manufacture a high-density thin-film multilayer wiring board. 2. A Cu layer having a thickness of 5 μm to 30 μm on the surface side.
Alternatively, a wiring pattern containing Au or Al as a main component is formed, the back surface has a thickness of 10 μm to 30 μm, a relative dielectric constant of 2.2 to 4.0, and a linear expansion coefficient with the wiring pattern after curing. Of 8 ppm / ° C. or less, the thickness is 10 μm to 50 μm, and the relative dielectric constant is 2.2 to 4.
0, the difference from the coefficient of linear expansion with the wiring pattern after curing is 8
A high density thin film multi-layer wiring board characterized by producing a high density thin film multilayer wiring board by laminating organic resin film constituents having an organic resin film of ppm / ° C. or less and thermocompressing to perform interlayer adhesion and curing of the adhesive layer. Manufacturing method of multilayer wiring board. 3. The organic resin film construct is laminated, thermocompression-bonded, interlayer adhesion and curing of the adhesive layer are performed, and then through-hole wiring connection is performed between the upper layer wiring pattern and the lower layer wiring pattern. Claim 1 or 2
A method for manufacturing the high-density thin-film multilayer wiring board described. 4. A Cu layer having a thickness of 5 μm to 30 μm on the surface side.
Alternatively, a wiring pattern containing Au or Al as a main component is formed, the back surface has a thickness of 10 μm to 30 μm, a relative dielectric constant of 2.2 to 4.0, an epoxy polymer, a benzocyclobutene polymer, or a benzo. A monomer or oligomer of a triazine polymer or a maleimide polymer and a monomer or oligomer of the polymer and a polyimide, a polyetherimide, a polyesterimide, a polyamideimide, a polyetheretherketone, a polysulfone, a polycarbonate, a liquid crystal polymer or a polyfluorocarbon. The thickness of the adhesive layer made of the mixture is 10μ
A high density thin film multilayer wiring board is obtained by laminating polymer film constituents having a polymer film of m to 50 μm and a relative dielectric constant of 2.2 to 4.0 and performing interlayer adhesion and thermosetting of the adhesive layer by thermocompression bonding. A method for manufacturing a high-density thin-film multilayer wiring board characterized by manufacturing. 5. A Cu layer having a thickness of 5 μm to 30 μm on the surface side.
Alternatively, a wiring pattern containing Au or Al as a main component is formed, the back surface has a thickness of 10 μm to 30 μm, a relative dielectric constant of 2.2 to 4.0, an epoxy polymer, a benzocyclobutene polymer, or a benzo. A monomer or oligomer of a triazine polymer or a maleimide polymer and a monomer or oligomer of the polymer and a polyimide, a polyetherimide, a polyesterimide, a polyamideimide, a polyetheretherketone, a polysulfone, a polycarbonate, a liquid crystal polymer or a polyfluorocarbon. The thickness of the adhesive layer made of the mixture is 10μ
m to 50 μm, relative dielectric constant of 2.2 to 4.0, polyimide, polyether imide, polyether imide, polyester imide, polyamide imide, polyether ether ketone, polysulfone, polycarbonate, liquid crystal polymer, polyfluorocarbon or epoxy Polymer films or benzocyclobutene polymers, benzotriazine polymers, maleimide polymers, or polymer film constituents having a polymer film made of a mixture thereof are laminated, and interlayer adhesion and thermosetting of the adhesive layer are performed by thermocompression bonding. A method for manufacturing a high-density thin-film multilayer wiring board, which comprises manufacturing a high-density thin-film multilayer wiring board. 6. A Cu layer having a thickness of 5 μm to 30 μm on the surface side.
Alternatively, a wiring pattern containing Au or Al as a main component is formed, the back surface has a thickness of 10 μm to 30 μm, a relative dielectric constant of 2.2 to 4.0, and a linear expansion coefficient with the wiring pattern after curing. Difference of 8 ppm / ° C. or less, monomer or oligomer of epoxy polymer, benzocyclobutene polymer, benzotriazine polymer or maleimide polymer and monomer or oligomer of the polymer and polyimide, polyetherimide or polyester An adhesive layer formed of a mixture of imide, polyamideimide, polyetheretherketone, polysulfone, polycarbonate, liquid crystal polymer, or polyfluorocarbon has a thickness of 10 μm to 50 μm and a relative dielectric constant of 2.2.
After curing, the difference between the coefficient of linear expansion with the wiring pattern after curing is 8 ppm / ° C. or less, and polyimide, polyetherimide, polyetherimide, polyesterimide, polyamideimide, polyetheretherketone, polysulfone, or polycarbonate is used. Alternatively, a polymer film structure having a polymer film comprising a liquid crystal polymer, polyfluorocarbon, an epoxy polymer, a benzocyclobutene polymer, a benzotriazine polymer, a maleimide polymer, or a mixture thereof,
A method for manufacturing a high-density thin-film multilayer wiring board, which comprises stacking and thermo-compressing to perform interlayer adhesion and curing of the adhesive layer to manufacture a high-density thin-film multilayer wiring board. 7. A Cu layer having a thickness of 5 μm to 30 μm on the surface side.
Alternatively, a wiring pattern containing Au or Al as a main component is formed, the back surface has a thickness of 10 μm to 30 μm, a relative dielectric constant of 2.2 to 4.0, and a linear expansion coefficient with the wiring pattern after curing. Difference of 8 ppm / ° C. or less, monomer or oligomer of epoxy polymer, benzocyclobutene polymer, benzotriazine polymer or maleimide polymer and monomer or oligomer of the polymer and polyimide, polyetherimide or polyester An adhesive layer made of a mixture of imide, polyamide imide, polyether ether ketone, polysulfone, polycarbonate, liquid crystal polymer, or polyfluorocarbon is formed to have a thickness of 10 to 50 μm and a relative dielectric constant of 2.2 to 4.
0, the difference from the coefficient of linear expansion with the wiring pattern after curing is 8
A high-density thin-film multilayer wiring board is manufactured by laminating polymer film constituents having a polymer film made of polyimide at ppm / ° C. or less and performing interlayer adhesion and curing of the adhesive layer by thermocompression bonding. Method for manufacturing high density thin film multilayer wiring board. 8. The polymer film structure is laminated, and after the interlayer adhesion and the curing of the adhesive layer are performed by thermocompression bonding, through-hole wiring connection is performed between the upper layer wiring pattern and the lower layer wiring pattern. The method for producing a high-density thin film multilayer wiring board according to claim 4, 5, 6 or 7. 9. A solution of a polyimide precursor is applied onto a copper foil having a thickness of 10 μm to 30 μm and is heat-cured to have a thickness of 10 μm.
A polyimide film with a copper foil for producing a polyimide film with a copper foil, which is made of a polyimide film having a relative dielectric constant of 2.2 to 4.0, and a polyimide film with a copper foil. In the polyimide film with a copper foil, a wiring pattern is formed on the copper foil, and the side opposite to the copper foil side has a thickness of 10 μm to 30 μm and a relative dielectric constant of 2.2 to 4.0.
After curing, the difference from the linear expansion coefficient with the wiring pattern is 8 ppm
A polyimide film structure forming step for forming a polyimide film structure by forming an adhesive layer of / ° C or lower, and the polyimide film structure obtained in the polyimide film structure forming step are laminated and bonded by interlayer bonding by thermocompression bonding. Laminating and curing layers to produce high-density thin-film multilayer wiring boards
A method for manufacturing a high-density thin-film multilayer wiring board, which comprises a thermocompression bonding step. 10. A copper thin film having a thickness of 10 μm to 50 μm and a copper thin film of 5 μm to 30 μm formed on a polyimide film made of a polyimide precursor having a relative dielectric constant of 2.2 to 4.0. Forming a polyimide film with a copper thin film with a copper thin film, a wiring pattern is formed on the copper thin film in the polyimide film with a copper film film created by the copper thin film with a polyimide film creating process, further the copper thin film side Thickness is 10 on the side facing
μm to 30 μm, relative permittivity of 2.2 to 4.0, difference in linear expansion coefficient from the wiring pattern after curing is 8 ppm / ° C.
A polyimide film structure forming step of forming a polyimide film structure by forming the following adhesive layer, and the polyimide film structure obtained in the polyimide film structure forming step is laminated to form an interlayer adhesion and an adhesive layer by thermocompression bonding. A method for manufacturing a high-density thin-film multilayer wiring board, comprising: a lamination / thermocompression bonding step of curing to manufacture a high-density thin-film multilayer wiring board. 11. A copper foil is adhered to a copper foil having a thickness of 10 μm to 30 μm and a polyimide film made of a polyimide precursor having a relative dielectric constant of 2.2 to 4.0 and having a thickness of 10 μm to 50 μm. A copper foil-containing polyimide film creating step for creating a polyimide film, and a wiring pattern is formed for the copper foil in the copper foil-containing polyimide film created by the copper foil-containing polyimide film creating step,
Further, a thickness of 10 μm to 30 μ is provided on the side facing the copper foil side.
and a relative dielectric constant of 2.2 to 4.0 and a difference in linear expansion coefficient from the wiring pattern after curing of 8 ppm / ° C. or less to form an adhesive layer to obtain a polyimide film structure. Stacking and thermocompression bonding for manufacturing a high-density thin-film multilayer wiring board by laminating the polyimide film constituent obtained in the polyimide film constituent manufacturing step and thermocompression bonding the interlayer adhesion and curing of the adhesive layer. A method for manufacturing a high-density thin-film multilayer wiring board, comprising: 12. The high-density thin-film multilayer wiring board obtained in the laminating / thermocompression bonding step further comprises a through-hole wiring connecting step for connecting through-hole wiring between an upper wiring pattern and a lower wiring pattern. A method for manufacturing a high-density thin-film multilayer wiring board according to claim 9, 10 or 11. 13. A wiring pattern having a thickness of 5 μm to 30 μm is formed on the front surface side and a thickness of 10 μm to 30 μm on the back surface side.
And an organic resin film construct having a polymer film having a relative dielectric constant of 2.2 to 4.0 and a thickness of 5 to 50 μm formed by forming an adhesive layer having a relative dielectric constant of 2.2 to 4.0, A high-density thin-film multilayer wiring board, characterized in that it is formed by stacking layers by adhesion between layers and curing of the bonding layer. 14. A wiring pattern having a thickness of 5 μm to 30 μm is formed on the front surface side and a thickness of 10 μm to 30 μm on the back surface side.
And an organic resin film structure having a polymer film having a relative dielectric constant of 2.2 to 4.0 and a thickness of 10 μm to 50 μm formed by forming an adhesive layer having a relative dielectric constant of 2.2 to 4.0, A high-density thin-film multilayer wiring board, characterized in that it is formed by stacking layers by inter-layer adhesion and curing of an adhesive layer, and has through-hole wiring connection between an upper layer wiring pattern and a lower layer wiring pattern. 15. A wiring pattern having a thickness of 5 μm to 30 μm is formed on the front surface side and a thickness of 10 μm to 30 μm on the back surface side.
The relative dielectric constant is 2.2 to 4.0, and the difference in the coefficient of linear expansion from the wiring pattern after curing is 8 ppm / ° C. or less and the thickness is 10 μm to 50 μm. Is 2.
An organic resin film construct having a polymer film having a linear expansion coefficient after curing of 2 to 4.0 and having a linear expansion coefficient of 8 ppm / ° C. or less after curing is laminated by interlayer adhesion and curing of the adhesive layer. A high-density thin-film multilayer wiring board characterized in that through-hole wiring is connected between an upper wiring pattern and a lower wiring pattern. 16. A wiring pattern having a thickness of 5 μm to 30 μm is formed on the front surface side, and a thickness of 10 μm to 30 μm is formed on the back surface side.
And an organic resin film structure having a polymer film having a relative dielectric constant of 2.2 to 4.0 and a thickness of 10 μm to 50 μm formed by forming an adhesive layer having a relative dielectric constant of 2.2 to 4.0, A high-density thin-film multilayer wiring board, which is formed by stacking layers by inter-layer adhesion and curing of an adhesive layer, and through-hole wiring is connected between an upper-layer wiring pattern and a lower-layer wiring pattern, is provided on the front surface side of the high-density thin-film multilayer wiring board. Is a high-density thin-film multilayer wiring board mounting structure characterized by being formed by mounting an LSI. 17. A wiring pattern having a thickness of 5 μm to 30 μm is formed on the front surface side and a thickness of 10 μm to 30 μm on the back surface side.
And an organic resin film structure having a polymer film having a relative dielectric constant of 2.2 to 4.0 and a thickness of 10 μm to 50 μm formed by forming an adhesive layer having a relative dielectric constant of 2.2 to 4.0, A high-density thin-film multilayer wiring board, which is formed by stacking layers by inter-layer adhesion and curing of an adhesive layer, and through-hole wiring is connected between an upper-layer wiring pattern and a lower-layer wiring pattern, is provided on the front surface side of the high-density thin-film multilayer wiring board. Is equipped with an LSI,
A high-density thin-film multilayer wiring board mounting structure, wherein the back side of the high-density thin-film multilayer wiring board is directly mounted on a printed board.