JPH0820886A - Plating method of ceramic electronic parts - Google Patents
Plating method of ceramic electronic partsInfo
- Publication number
- JPH0820886A JPH0820886A JP15885894A JP15885894A JPH0820886A JP H0820886 A JPH0820886 A JP H0820886A JP 15885894 A JP15885894 A JP 15885894A JP 15885894 A JP15885894 A JP 15885894A JP H0820886 A JPH0820886 A JP H0820886A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- ceramic electronic
- organic acid
- electronic parts
- electronic component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007747 plating Methods 0.000 title claims abstract description 52
- 239000000919 ceramic Substances 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims description 14
- 150000007524 organic acids Chemical class 0.000 claims abstract description 20
- 150000002500 ions Chemical class 0.000 claims abstract description 12
- 239000008139 complexing agent Substances 0.000 claims abstract description 9
- 238000009713 electroplating Methods 0.000 claims abstract description 6
- 229910021645 metal ion Inorganic materials 0.000 claims description 9
- 230000035939 shock Effects 0.000 abstract description 12
- -1 organic acid ion Chemical class 0.000 abstract description 9
- 239000011521 glass Substances 0.000 abstract description 4
- 238000005476 soldering Methods 0.000 abstract description 3
- 230000002542 deteriorative effect Effects 0.000 abstract description 2
- 150000001455 metallic ions Chemical class 0.000 abstract 2
- 230000006866 deterioration Effects 0.000 abstract 1
- 238000004090 dissolution Methods 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 description 12
- 229910000679 solder Inorganic materials 0.000 description 5
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910020816 Sn Pb Inorganic materials 0.000 description 3
- 229910020922 Sn-Pb Inorganic materials 0.000 description 3
- 229910008783 Sn—Pb Inorganic materials 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 238000009864 tensile test Methods 0.000 description 3
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000009918 complex formation Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
- Ceramic Capacitors (AREA)
- Electroplating And Plating Baths Therefor (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、例えば積層コンデンサ
等のセラミック電子部品の電極上にメッキ膜を形成する
ための方法に関し、特に、メッキ浴中にて電気メッキに
よりメッキ膜を形成する方法の改良に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a plating film on an electrode of a ceramic electronic component such as a multilayer capacitor, and more particularly to a method for forming a plating film by electroplating in a plating bath. Regarding improvement.
【０００２】[0002]
【従来の技術】従来のセラミック電子部品の一例とし
て、積層コンデンサを図１に示す。積層コンデンサ１
は、誘電体セラミックスよりなる焼結体２内に、複数の
内部電極３，３をセラミック層を介して積層した構造を
有する。焼結体２の両端面２ａ，２ｂには、所定の内部
電極３に電気的に接続されるように、一対の外部電極
４，５が形成されている。外部電極４，５は、例えばＡ
ｇもしくはＡｇ−Ｐｄの厚膜により形成されている。2. Description of the Related Art FIG. 1 shows a multilayer capacitor as an example of a conventional ceramic electronic component. Multilayer capacitor 1
Has a structure in which a plurality of internal electrodes 3, 3 are laminated via a ceramic layer in a sintered body 2 made of dielectric ceramics. A pair of external electrodes 4 and 5 is formed on both end surfaces 2 a and 2 b of the sintered body 2 so as to be electrically connected to a predetermined internal electrode 3. The external electrodes 4 and 5 are, for example, A
It is formed of a thick film of g or Ag-Pd.
【０００３】また、積層コンデンサ１では、プリント基
板等への半田付けに際しての外部電極４，５の半田喰わ
れ現象を防止するために、図１に示されているように、
例えばＮｉよりなる第１のメッキ層６，７が形成されて
いる。さらに、Ｎｉよりなる第１のメッキ膜６，７の半
田付け性を補うために、その上に、半田付け性に優れた
例えばＳｎもしくはＳｎ−Ｐｂよりなる第２のメッキ膜
８，９が電気メッキにより形成されている。Also, in the multilayer capacitor 1, as shown in FIG. 1, in order to prevent the phenomenon of the external electrodes 4 and 5 being soldered when soldering to a printed circuit board or the like, as shown in FIG.
For example, first plating layers 6 and 7 made of Ni are formed. Further, in order to supplement the solderability of the first plating films 6 and 7 made of Ni, the second plating films 8 and 9 made of, for example, Sn or Sn-Pb, which are excellent in solderability, are electrically formed thereon in order to supplement the solderability. It is formed by plating.
【０００４】ところで、上記ＳｎもしくはＳｎ−Ｐｂよ
りなるメッキ膜を形成する場合、メッキ浴としては、錯
化剤として例えばカルボン酸系の有機酸を含む中性のメ
ッキ浴が用いられている。このメッキ浴中に含まれてい
る有機酸は、Ｓｎ２価イオンを錯化させ、Ｓｎ４価イオ
ンへの酸化反応を抑制するために、並びに陽極をスムー
ズに溶解させるために加えられている。When forming a plating film of Sn or Sn-Pb, a neutral plating bath containing a carboxylic acid organic acid as a complexing agent is used as the plating bath. The organic acid contained in this plating bath is added in order to complex Sn2 valence ions and suppress the oxidation reaction to Sn4 valence ions, and to dissolve the anode smoothly.
【０００５】[0005]
【発明が解決しようとする課題】錯化剤としての有機酸
は上記のような作用をもたらすものであるが、過剰の有
機酸を添加した場合には、Ｓｎ２価イオンとの錯体形成
に関与していないフリーの有機酸イオンが過剰に存在す
ることになる。その結果、フリーの有機酸イオンが、外
部電極中のガラスフリットを溶解し、積層コンデンサ等
のセラミック電子部品の耐熱性や耐機械衝撃性等を低下
させるという問題があった。The organic acid as a complexing agent has the above-mentioned effects, but when an excess amount of the organic acid is added, it is involved in complex formation with Sn divalent ions. Not free organic acid ions will be present in excess. As a result, there is a problem that the free organic acid ions dissolve the glass frit in the external electrode and reduce the heat resistance and mechanical shock resistance of the ceramic electronic component such as the multilayer capacitor.
【０００６】本発明の目的は、セラミック電子部品の電
極上に、セラミック電子部品の特性を低下させることな
く、メッキ膜を安定に形成することを可能とするセラミ
ック電子部品のメッキ方法を提供することにある。An object of the present invention is to provide a method for plating a ceramic electronic component, which makes it possible to stably form a plating film on an electrode of the ceramic electronic component without deteriorating the characteristics of the ceramic electronic component. It is in.
【０００７】[0007]
【課題を解決するための手段】本発明は、セラミック電
子部品の電極上にメッキ浴中にて電気メッキによりメッ
キ膜を形成する方法において、メッキ浴中の錯化剤とし
ての有機酸と、メッキされる金属イオンとの割合をモル
比で０．６〜２．４の範囲としてメッキを行うことを特
徴とするセラミック電子部品のメッキ方法である。The present invention relates to a method of forming a plating film on an electrode of a ceramic electronic component by electroplating in a plating bath, wherein an organic acid as a complexing agent in the plating bath and plating are used. The method for plating a ceramic electronic component is characterized in that the plating is carried out in a molar ratio of 0.6 to 2.4 with the metal ion.
【０００８】本発明は、セラミック電子部品のメッキ方
法に関し、例えば積層コンデンサ、セラミック多層基板
等のセラミック積層電子部品の外部電極上にメッキ膜を
形成する場合、あるいはセラミック積層電子部品以外の
セラミック電子部品の任意の電極上にメッキ膜を形成す
る用途に用いることができる。The present invention relates to a method for plating a ceramic electronic component, for example, when a plating film is formed on an external electrode of a ceramic multilayer electronic component such as a multilayer capacitor or a ceramic multilayer substrate, or a ceramic electronic component other than the ceramic multilayer electronic component. Can be used for forming a plating film on any of the electrodes.
【０００９】また、本発明のメッキ方法は、種々の金属
からなるメッキ膜を電極上に形成するのに用い得るが、
例えばＳｎ２価イオンを含むメッキ浴を用い、Ｓｎ膜
や、Ｓｎ−Ｐｂ膜を形成する場合に好適に用いることが
できる。The plating method of the present invention can be used to form a plating film made of various metals on electrodes.
For example, it can be suitably used when forming a Sn film or a Sn-Pb film using a plating bath containing Sn 2+ ions.
【００１０】なお、本発明で用いられる錯化剤としての
有機酸としては、例えばシュウ酸、クエン酸等を挙げる
ことができる。Examples of the organic acid as the complexing agent used in the present invention include oxalic acid and citric acid.
【００１１】[0011]
【作用】本発明では、メッキ浴中の錯化剤としての有機
酸と、メッキされる金属イオンの割合を、モル比で０．
６〜２．４の範囲とすることにより、フリーの有機酸イ
オンの量を抑制することが可能とされている。従って、
外部電極中に含まれているガラスフリット等が有機酸イ
オンにより溶解され難いので、特性の安定なセラミック
電子部品を得ることができる。In the present invention, the ratio of the organic acid as the complexing agent in the plating bath to the metal ion to be plated is 0.
By setting it in the range of 6 to 2.4, it is possible to suppress the amount of free organic acid ions. Therefore,
Since the glass frit and the like contained in the external electrode are not easily dissolved by the organic acid ions, it is possible to obtain a ceramic electronic component having stable characteristics.
【００１２】上記有機酸と金属イオンとの割合をモル比
で０．６〜２．４の範囲とすれば上記のように特性の安
定なセラミック電子部品の得られることは、本願発明者
により実験的に確かめられたものである。なお、有機酸
と金属イオンとの割合が０．６未満の場合には、有機酸
の量が少なくなりすぎ、金属イオンの酸化が進み易くな
り、好ましくない。他方、２．４を越えると、フリーの
有機酸が過剰に存在し、前述した問題点が生じる。Experiments by the inventor of the present application show that a ceramic electronic component having stable characteristics as described above can be obtained when the molar ratio of the organic acid to the metal ion is in the range of 0.6 to 2.4. It has been confirmed. If the ratio of the organic acid and the metal ion is less than 0.6, the amount of the organic acid becomes too small, and the oxidation of the metal ion easily proceeds, which is not preferable. On the other hand, when it exceeds 2.4, the free organic acid exists in excess and the above-mentioned problems occur.
【００１３】[0013]
【実施例の説明】以下、実施例を説明することにより、
本発明を明らかにする。以下の実施例は、チップ型積層
コンデンサの外部電極上に、Ｓｎメッキ膜を形成する方
法に適用したものである。[Explanation of Examples] Hereinafter, by explaining examples,
The present invention will be clarified. The following example is applied to a method of forming an Sn plating film on an external electrode of a chip type multilayer capacitor.
【００１４】有機酸としてカルボン酸系のものを用いて
表１に示すＡ浴〜Ｇ浴の７種類のメッキ浴を用意し、図
１に示した積層コンデンサ１の外部電極４，５上にＳｎ
メッキ膜を電気メッキにより形成した。Seven kinds of plating baths A to G shown in Table 1 were prepared using a carboxylic acid type organic acid, and Sn was deposited on the external electrodes 4 and 5 of the multilayer capacitor 1 shown in FIG.
The plating film was formed by electroplating.
【００１５】[0015]
【表１】 [Table 1]
【００１６】上記Ａ〜Ｇのメッキ浴を用いてメッキされ
た積層コンデンサにつき、下記の要領ではんだ熱衝撃試
験を実施した。 はんだ熱衝撃試験…温度Ｔ＝２００，２５０，３００，
３５０，４００℃の溶融はんだに、３秒浸漬した。Solder thermal shock tests were carried out on the laminated capacitors plated using the plating baths A to G in the following manner. Solder thermal shock test ... Temperature T = 200, 250, 300,
It was immersed in molten solder at 350 and 400 ° C. for 3 seconds.
【００１７】上記はんだ熱衝撃試験の結果を図２に示
す。図２から明らかなように、有機酸と、Ｓｎ２価イオ
ンのモル比が、０．６〜２．４の場合、すなわちＢ浴〜
Ｅ浴では、従来のメッキ浴であるＡ浴を用いた場合に比
べ、製品の耐熱衝撃性が高められていることがわかる。The results of the solder thermal shock test are shown in FIG. As is clear from FIG. 2, when the molar ratio of the organic acid and the Sn2 valent ion is 0.6 to 2.4, that is, the B bath-
It can be seen that in the E bath, the thermal shock resistance of the product is enhanced as compared with the case where the A bath which is a conventional plating bath is used.
【００１８】次に、上記Ａ浴〜Ｇ浴を用いてメッキ膜を
形成した各積層コンデンサの外部電極上にＣｕよりなる
リード線を外部電極に直交する方向にはんだ付けにより
接合し、該リード線を外部電極と直交する方向外側に引
っ張り、引っ張り試験を行った。結果を図３に示す。Next, a lead wire made of Cu is joined by soldering to the external electrode of each laminated capacitor having a plating film formed by using the above A to G baths in a direction orthogonal to the external electrode, and the lead wire is joined. Was pulled outward in the direction orthogonal to the external electrode, and a tensile test was conducted. The results are shown in Fig. 3.
【００１９】図３から明らかなように、上記耐熱衝撃性
の結果と同様に、有機酸のＳｎ２価イオンに対する割合
が小さいほど、上記引っ張り強度が高められることがわ
かる。As is apparent from FIG. 3, similar to the result of the thermal shock resistance, it is understood that the smaller the ratio of the organic acid to the Sn2 valent ion, the higher the tensile strength.
【００２０】上記はんだ熱衝撃試験及びリード線引っ張
り試験の結果から、メッキ浴中の有機酸とＳｎ２価イオ
ンのモル比が小さくなると、Ｓｎ２価イオンと錯体を形
成していないフリーの有機酸イオンが減少し、それによ
って上記のような結果が生じているものと考えられる。
すなわち、フリーの有機酸イオンにより、外部電極中の
ガラスフリットが飛び出す現象が抑制され、セラミック
焼結体内へのメッキ液の侵入が抑制され、それによって
耐熱衝撃性及び耐機械衝撃性の低下が抑制されているも
のと考えられる。From the results of the solder thermal shock test and the lead wire tensile test, when the molar ratio of the organic acid and the Sn2 valent ion in the plating bath becomes small, the free organic acid ion which does not form a complex with the Sn2 valent ion is generated. It is considered that the decrease is caused and the above-mentioned result is caused thereby.
That is, the phenomenon in which the glass frit in the external electrode jumps out is suppressed by the free organic acid ions, and the penetration of the plating solution into the ceramic sintered body is suppressed, thereby suppressing the reduction of thermal shock resistance and mechanical shock resistance. It is thought to have been done.
【００２１】なお、Ｇ浴を用いた場合の結果から明らか
なように、有機酸の濃度を低下させた場合には、Ｓｎ２
価イオンの濃度を高めてメッキ浴を調製したとしても、
Ｂ浴〜Ｅ浴と同様の結果が得られることが確認されてい
る。As is clear from the results of using the G bath, when the organic acid concentration was lowered, Sn2
Even if the plating bath is prepared by increasing the concentration of valence ions,
It has been confirmed that the same results as in baths B to E can be obtained.
【００２２】本実施例では、有機酸としてカルボン酸系
を用い、金属イオンとしてＳｎ２価イオンを用いた場合
を例に取り説明したが、本発明のメッキ方法は、例えば
アミン系等の他の有機酸を用いたメッキ浴を用い、Ｓｎ
以外の他の金属をメッキする方法にも適用することがで
きる。In the present embodiment, the case where the carboxylic acid type is used as the organic acid and the Sn2 valent ion is used as the metal ion has been described as an example. However, the plating method of the present invention is not limited to amine type or other organic type. Using a plating bath with acid, Sn
It can also be applied to a method of plating a metal other than the above.
【００２３】[0023]
【発明の効果】本発明によれば、メッキ浴中の錯化剤と
しての有機酸とメッキされる金属イオンとの割合が、上
記特定の範囲内とされているため、メッキ液のセラミッ
ク電子部品内への侵入が抑制され、セラミック電子部品
の耐熱性及び耐機械的衝撃性が高められる。よって、信
頼性に優れたセラミック電子部品を安定に供給すること
が可能となる。According to the present invention, since the ratio of the organic acid as the complexing agent in the plating bath to the metal ion to be plated is within the above-specified range, the ceramic electronic component of the plating solution is used. Intrusion into the interior is suppressed, and heat resistance and mechanical shock resistance of the ceramic electronic component are improved. Therefore, it becomes possible to stably supply the highly reliable ceramic electronic component.
【図１】セラミック電子部品の一例としての積層コンデ
ンサを示す断面図。FIG. 1 is a sectional view showing a multilayer capacitor as an example of a ceramic electronic component.
【図２】熱衝撃試験結果を示す。FIG. 2 shows the results of thermal shock test.
【図３】外部電極引っ張り試験結果を示す図。FIG. 3 is a view showing a result of an external electrode tensile test.
１…積層コンデンサ（セラミック電子部品） ２…焼結体 ３…内部電極 ４，５…外部電極 ６，７，８，９…メッキ膜 DESCRIPTION OF SYMBOLS 1 ... Multilayer capacitor (ceramic electronic component) 2 ... Sintered body 3 ... Internal electrode 4, 5 ... External electrode 6, 7, 8, 9 ... Plating film
Claims (2)
中にて電気メッキによりメッキ膜を形成する方法におい
て、 メッキ液浴中の錯化剤としての有機酸と、メッキされる
金属イオンとの割合をモル比で０．６〜２．４の範囲と
してメッキを行うことを特徴とする、セラミック電子部
品のメッキ方法。1. A method of forming a plating film on a ceramic electronic component electrode by electroplating in a plating bath, wherein a ratio of an organic acid as a complexing agent in a plating solution bath and a metal ion to be plated. The method for plating a ceramic electronic component is characterized in that the plating is carried out in a molar ratio of 0.6 to 2.4.
ンである、請求項１に記載のセラミック電子部品のメッ
キ方法。2. The method for plating a ceramic electronic component according to claim 1, wherein the metal ions to be plated are Sn ions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15885894A JP3214239B2 (en) | 1994-07-11 | 1994-07-11 | Plating method for ceramic electronic components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15885894A JP3214239B2 (en) | 1994-07-11 | 1994-07-11 | Plating method for ceramic electronic components |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0820886A true JPH0820886A (en) | 1996-01-23 |
| JP3214239B2 JP3214239B2 (en) | 2001-10-02 |
Family
ID=15680945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15885894A Expired - Lifetime JP3214239B2 (en) | 1994-07-11 | 1994-07-11 | Plating method for ceramic electronic components |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3214239B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012036435A (en) * | 2010-08-05 | 2012-02-23 | Tdk Corp | Electrolytic tin plating solution, and method for manufacturing ceramic electronic component |
-
1994
- 1994-07-11 JP JP15885894A patent/JP3214239B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012036435A (en) * | 2010-08-05 | 2012-02-23 | Tdk Corp | Electrolytic tin plating solution, and method for manufacturing ceramic electronic component |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3214239B2 (en) | 2001-10-02 |
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