JPH0826723A - Thin-film structural body and electronic parts and optical parts having thin-film structural body - Google Patents
Thin-film structural body and electronic parts and optical parts having thin-film structural bodyInfo
- Publication number
- JPH0826723A JPH0826723A JP18284194A JP18284194A JPH0826723A JP H0826723 A JPH0826723 A JP H0826723A JP 18284194 A JP18284194 A JP 18284194A JP 18284194 A JP18284194 A JP 18284194A JP H0826723 A JPH0826723 A JP H0826723A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- zno
- film structure
- orientation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 94
- 230000003287 optical effect Effects 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 239000010408 film Substances 0.000 claims abstract description 36
- 239000013078 crystal Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 229910052594 sapphire Inorganic materials 0.000 abstract description 20
- 239000010980 sapphire Substances 0.000 abstract description 20
- 229910052782 aluminium Inorganic materials 0.000 abstract description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 17
- 239000011521 glass Substances 0.000 description 20
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 11
- 229910001120 nichrome Inorganic materials 0.000 description 11
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000005424 photoluminescence Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、薄膜構造体ならびに薄
膜構造体を備えた電子部品及び光学部品に関する。具体
的にいうと、ＺｎＯ等の配向膜の結晶配向を自由にコン
トロールすることができる薄膜構造体に関する。また、
当該薄膜構造体を利用したバルク波トランスジューサ等
の電子部品や、広帯域光偏向器等の光学部品に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film structure and electronic parts and optical parts provided with the thin film structure. Specifically, it relates to a thin film structure capable of freely controlling the crystal orientation of an orientation film such as ZnO. Also,
The present invention relates to electronic components such as bulk wave transducers and the like using the thin film structure, and optical components such as a broadband optical deflector.
【０００２】[0002]
【従来の技術】半導体製造技術の進歩に伴って結晶成長
技術も長足の進歩を遂げており、薄膜形成技術を用いれ
ば、基板上に所望配向の配向膜を形成することができる
ことは従来より広く知られている。しかし、しかも、基
板としてサファイア基板を用いれば、エピタキシャル薄
膜を得ることができる。このエピタキシャル薄膜の場合
には、基板上に形成されるエピタキシャル薄膜の結晶配
向は、基板の種類や基板表面の結晶配向によって決まっ
ている。2. Description of the Related Art Crystal growth technology has made great strides along with the progress of semiconductor manufacturing technology, and it has been widely known that it is possible to form an oriented film having a desired orientation on a substrate by using a thin film forming technology. Are known. However, if a sapphire substrate is used as the substrate, an epitaxial thin film can be obtained. In the case of this epitaxial thin film, the crystal orientation of the epitaxial thin film formed on the substrate is determined by the type of substrate and the crystal orientation of the substrate surface.
【０００３】例えば、六方晶系の結晶構造を有するＺｎ
Ｏ薄膜を例にとると、ガラス基板上に成膜された多結晶
ＺｎＯ薄膜、アルミニウム薄膜を表面全体もしくは一部
に形成されたガラス基板上に成膜された多結晶ＺｎＯ薄
膜（例えばガラス基板上にアルミニウムの櫛歯電極を形
成し、さらにその上にＺｎＯ薄膜を形成したトランスジ
ューサ）、シリコン基板上に成膜された多結晶ＺｎＯ薄
膜、Ｃ面サファイア基板上に成膜されたエピタキシャル
ＺｎＯ薄膜などの場合には、ｃ軸が基板表面と垂直な方
向を向いたｃ軸配向膜となる。また、Ｒ面サファイア基
板上に成膜されたエピタキシャルＺｎＯ薄膜では、For example, Zn having a hexagonal crystal structure
Taking an O thin film as an example, a polycrystalline ZnO thin film formed on a glass substrate, a polycrystalline ZnO thin film formed on a glass substrate having an aluminum thin film formed on all or part of its surface (for example, on a glass substrate) A comb-shaped electrode of aluminum on which a ZnO thin film is further formed), a polycrystalline ZnO thin film formed on a silicon substrate, an epitaxial ZnO thin film formed on a C-plane sapphire substrate, etc. In this case, the c-axis oriented film has a c-axis oriented in a direction perpendicular to the substrate surface. Further, in the epitaxial ZnO thin film formed on the R-plane sapphire substrate,
【外１】 〔以下、（１１２*０）と記す〕配向膜となる。[Outside 1] [Hereinafter, described as (112 * 0)] It becomes an alignment film.
【０００４】しかし、いずれの場合も、ＺｎＯ薄膜は１
軸配向膜であって、ＺｎＯ薄膜の結晶配向、例えばｃ軸
方向は基板全体にわたって均一であった。この事情はＺ
ｎＯ薄膜以外のエピタキシャル薄膜の場合も同様であっ
て、同一基板上に結晶配向の異なるエピタキシャル薄膜
を形成する技術は存在していなかった。However, in any case, the ZnO thin film is 1
In the axially oriented film, the crystal orientation of the ZnO thin film, for example, the c-axis direction was uniform over the entire substrate. This situation is Z
The same applies to the case of epitaxial thin films other than nO thin films, and there has been no technique for forming epitaxial thin films having different crystal orientations on the same substrate.
【０００５】[0005]
【発明が解決しようとする課題】本発明は叙上の従来技
術の状況に鑑みてなされたものであって、その目的とす
るところは、同一結晶基板上に結晶配向の異なる領域を
有する薄膜を形成することを可能にし、さらに薄膜の結
晶配向を自由にコントロールできるようにすると共に、
このようにして形成された薄膜構造体の有用性を明らか
にすることにある。SUMMARY OF THE INVENTION The present invention has been made in view of the situation of the above prior art, and its object is to provide a thin film having regions having different crystal orientations on the same crystal substrate. In addition to enabling the formation, it is possible to freely control the crystal orientation of the thin film,
The purpose is to clarify the usefulness of the thin film structure thus formed.
【０００６】[0006]
【課題を解決するための手段】本発明の第１の薄膜構造
体は、基板表面に部分的に金属層を形成し、金属層の上
から基板の上に配向膜を形成した薄膜構造体であって、
金属層上に形成されている領域と基板上に形成されてい
る領域とで当該配向膜の結晶配向が異なっていることを
特徴としている。A first thin film structure of the present invention is a thin film structure in which a metal layer is partially formed on a substrate surface and an alignment film is formed on the substrate from above the metal layer. There
It is characterized in that the crystal orientation of the orientation film is different between the region formed on the metal layer and the region formed on the substrate.
【０００７】本発明の第２の薄膜構造体は、基板表面に
２種以上の金属層を形成し、これらの金属層の上から基
板の上に配向膜を形成した薄膜構造体であって、異種の
金属層の上に形成されている領域で当該配向膜の結晶配
向が異なっていることを特徴としている。A second thin film structure of the present invention is a thin film structure in which two or more kinds of metal layers are formed on the surface of a substrate, and an alignment film is formed on the substrate from above these metal layers. It is characterized in that the crystal orientation of the orientation film is different in regions formed on different kinds of metal layers.
【０００８】上記薄膜構造体においては、配向膜とし
て、ＺｎＯ層を用いることができる。In the above thin film structure, a ZnO layer can be used as the alignment film.
【０００９】また、上記薄膜構造体は電子部品や光学部
品に応用することができる。The thin film structure can be applied to electronic parts and optical parts.
【００１０】[0010]
【作用】適当な金属の層を介して基板の上に配向膜を成
膜した場合には、基板表面に直接配向膜を成膜した場合
と配向の異なる配向膜を得られることが分かった。本発
明の第１の薄膜構造体は、このような知見に基づくもの
であって、このような基板と金属層とを組合わせ、部分
的に金属層を形成された基板の上に配向膜を形成すれ
ば、金属層上と基板上とで配向膜の結晶配向を異ならせ
ることができる。It has been found that when the alignment film is formed on the substrate through an appropriate metal layer, the alignment film having a different alignment can be obtained as compared with the case where the alignment film is directly formed on the substrate surface. The first thin film structure of the present invention is based on such knowledge, and combines such a substrate and a metal layer to form an alignment film on a substrate where a metal layer is partially formed. If formed, the crystal orientation of the orientation film can be made different on the metal layer and the substrate.
【００１１】また、同一の基板であっても金属の種類が
異なれば、その上に形成された配向膜の配向が異なる場
合があることも分かった。本発明の第２の薄膜構造体
は、このような知見に基づいてなされたものであって、
適当な金属の組合わせを選択し、２種以上の金属層を形
成された基板の上に配向膜を形成すれば、異種の金属層
の上で配向膜の結晶配向を異ならせることができる。It has also been found that the same substrate may have different orientations of the orientation film formed thereon if the type of metal is different. The second thin film structure of the present invention is based on such findings,
By selecting an appropriate combination of metals and forming the alignment film on the substrate on which two or more kinds of metal layers are formed, the crystal orientation of the alignment film can be made different on different kinds of metal layers.
【００１２】したがって、本発明によれば、同一基板上
に２つ以上の結晶配向を有する配向膜、つまり異なる結
晶配向が混在した同種配向膜を得ることができ、従来知
られていなかった新規な薄膜構造体を得ることができ
る。また、基板と金属との組合わせや、異種金属の組合
わせを選択することにより配向膜の各結晶配向の向きを
自由にコントロールすることができる。Therefore, according to the present invention, it is possible to obtain an alignment film having two or more crystal orientations on the same substrate, that is, an alignment film of the same kind in which different crystal orientations are mixed, which is not known in the art. A thin film structure can be obtained. Further, the orientation of each crystal orientation of the orientation film can be freely controlled by selecting the combination of the substrate and the metal or the combination of the different metals.
【００１３】このようにして結晶配向の混在した配向膜
は、結晶配向の異なる領域でその物理的特性、電気的特
性や光学特性なども異なるので、このような特徴を利用
した新規な電子部品や光学部品を製作することができ
る。In such an orientation film in which crystal orientations are mixed, physical properties, electrical characteristics, and optical characteristics are different in regions having different crystal orientations. Optical components can be manufactured.
【００１４】[0014]
【実施例】図１は本発明の一実施例によるＺｎＯ薄膜構
造体１を示す概略断面図である。この実施例にあって
は、基板としてＲ面サファイア基板２を用いており、蒸
着法によってＲ面サファイア基板２の表面にアルミニウ
ム電極３を部分的に形成している。アルミニウム電極３
は、用途に応じて規則的に形成しても良く、ランダムに
形成しても良く、あるいは所望パターンとなるように形
成しても良い。さらに、このＲ面サファア基板の表面に
は、スパッタ法、分子線成長法（ＭＢＥ）や気相成長法
（ＶＰＥ）等によってアルミニウム電極３の上から適宜
厚みの配向膜としてＺｎＯ薄膜４が成膜させられてい
る。このようにして形成されたＺｎＯ薄膜構造体１にお
いては、アルミニウム電極３を介することなくＲ面サフ
ァイア基板２上に直接成膜された領域では、ＺｎＯ薄膜
４は（１１２*０）配向膜となっていて、その結晶軸の
ｃ軸方向は図１に矢印で示すようにＲ面サファイア基板
２の表面とほぼ平行な方向を向いている。一方、アルミ
ニウム電極３の上に成膜された領域では、ＺｎＯ薄膜４
は（００２）配向膜となっていて、そのｃ軸方向は図１
に矢印で示すようにＲ面サファイア基板２の表面と垂直
な方向に配向している。1 is a schematic sectional view showing a ZnO thin film structure 1 according to an embodiment of the present invention. In this embodiment, the R-plane sapphire substrate 2 is used as the substrate, and the aluminum electrode 3 is partially formed on the surface of the R-plane sapphire substrate 2 by the vapor deposition method. Aluminum electrode 3
May be regularly formed, randomly formed, or formed into a desired pattern according to the use. Further, on the surface of the R-plane sapphire substrate, a ZnO thin film 4 is formed as an alignment film having an appropriate thickness on the aluminum electrode 3 by a sputtering method, a molecular beam growth method (MBE), a vapor phase growth method (VPE) or the like. Has been made. In the ZnO thin film structure 1 thus formed, the ZnO thin film 4 becomes a (112 * 0) oriented film in the region directly formed on the R-plane sapphire substrate 2 without the aluminum electrode 3 interposed. However, the c-axis direction of the crystal axis is substantially parallel to the surface of the R-plane sapphire substrate 2 as shown by the arrow in FIG. On the other hand, in the region formed on the aluminum electrode 3, the ZnO thin film 4 is formed.
Is a (002) oriented film, and its c-axis direction is shown in FIG.
As shown by the arrow in FIG. 3, the R-plane sapphire substrate 2 is oriented in a direction perpendicular to the surface.
【００１５】上記ＺｎＯ薄膜構造体１におけるＺｎＯ薄
膜４のｃ軸配向をＸ線回折法によって確認する試験を行
なった。しかし、上記ＺｎＯ薄膜構造体１を直接試験し
たところ（１１２*０）面からの回折と（００２）面か
らの回折が同時に表われて領域毎に配向が異なっている
ことの確認を行なえなかった。そのため、Ｒ面サファイ
ア基板の上に直接ＺｎＯ薄膜を形成した試料（ＺｎＯ／
Ｒ面サファイア試料）と、Ｒ面サファイア基板の表面全
体にアルミニウム電極を形成し、その上にＺｎＯ薄膜を
エピタキシャル成長させた試料（ＺｎＯ／Ａｌ／Ｒ面サ
ファイア試料）とを作製し、両試料のｃ軸配向を調べ
た。図２はＺｎＯ／Ｒ面サファイア試料を用いてＸ線回
折試験した結果得られたスペクトルを示す図であって、
ここにはＺｎＯの（１１２*０）面を示すピークだけが
顕著に表われている。また、図３はＺｎＯ／Ａｌ／Ｒ面
サファイア試料を用いてＸ線回折試験した結果得られた
スペクトルを示す図であって、ここにはＺｎＯの（００
２）面を示すピークだけが表われている。配向膜の結晶
配向はその下の基板部分の構造によって決まるから、上
記試験より、アルミニウム電極３の上ではＺｎＯ薄膜４
は（００２）面となっていてｃ軸が垂直方向に配向し、
アルミニウム電極３のない領域ではＺｎＯ薄膜４は（１
１２*０）面となっていてｃ軸が水平方向に配向してい
ることが分かる。A test was conducted to confirm the c-axis orientation of the ZnO thin film 4 in the ZnO thin film structure 1 by an X-ray diffraction method. However, when the above ZnO thin film structure 1 was directly tested, it was not possible to confirm that the diffraction from the (112 * 0) plane and the diffraction from the (002) plane appeared at the same time and the orientations were different in each region. . Therefore, a sample (ZnO / ZnO /
(R-plane sapphire sample) and a sample (ZnO / Al / R-plane sapphire sample) in which an aluminum electrode is formed on the entire surface of the R-plane sapphire substrate and a ZnO thin film is epitaxially grown thereon are prepared. The axial orientation was investigated. FIG. 2 is a diagram showing a spectrum obtained as a result of an X-ray diffraction test using a ZnO / R plane sapphire sample,
Only the peak showing the (112 * 0) plane of ZnO is conspicuous here. FIG. 3 is a diagram showing a spectrum obtained as a result of an X-ray diffraction test using a ZnO / Al / R plane sapphire sample.
2) Only the peak showing the plane is shown. Since the crystal orientation of the orientation film is determined by the structure of the underlying substrate portion, the above test shows that the ZnO thin film 4 is formed on the aluminum electrode 3.
Is a (002) plane and the c-axis is oriented vertically,
In the region without the aluminum electrode 3, the ZnO thin film 4 has (1
It can be seen that the plane is 12 * 0) and the c-axis is oriented in the horizontal direction.
【００１６】従って、このＺｎＯ薄膜構造体１では、Ｚ
ｎＯ薄膜４のｃ軸が垂直方向を向いた領域と水平方向を
向いた領域とがあり、このｃ軸配向の分布はアルミニウ
ム電極３のパターンにより自由にコントロールすること
ができる。Therefore, in this ZnO thin film structure 1, Z
The nO thin film 4 has a region in which the c-axis is oriented in the vertical direction and a region in which it is oriented in the horizontal direction. The distribution of the c-axis orientation can be freely controlled by the pattern of the aluminum electrode 3.
【００１７】このように領域毎に配向の異なるＺｎＯ薄
膜４を有するＺｎＯ薄膜構造体１では、配向の異なる領
域毎にその物理的性質や光学的性質等が異なるので、こ
れを利用すれば特異なデバイスを製作することができ
る。例えば、図４はバルク波トランスジューサ５として
用いた場合を示している。これはＲ面サファイア基板２
の上に微小ピッチの櫛型のアルミニウム電極３を形成
し、その上にＺｎＯ薄膜４を形成した上記のようなＺｎ
Ｏ薄膜構造体１をトランスジューサ基板６とし、その上
に電極７等を設けたものである。ｃ軸が水平方向を向い
た領域では、ＺｎＯ薄膜と逆方向に縦波成分が伝搬し、
ｃ軸が垂直方向を向いた領域では横波成分が伝搬するの
で、入力電極としてアルミニウム電極３と電極７を用い
ることにより、縦波と横波の両成分をもったバルク波ト
ランスジューサ５となる。As described above, in the ZnO thin film structure 1 having the ZnO thin film 4 having different orientations in each region, its physical properties and optical properties are different in each region having different orientations. Devices can be manufactured. For example, FIG. 4 shows a case where the bulk wave transducer 5 is used. This is the R side sapphire substrate 2
The above-mentioned Zn in which a fine pitch comb-shaped aluminum electrode 3 is formed on the ZnO thin film 4 and a ZnO thin film 4 is formed thereon
The O thin film structure 1 is used as a transducer substrate 6 and electrodes 7 and the like are provided thereon. In the region where the c-axis is oriented in the horizontal direction, the longitudinal wave component propagates in the direction opposite to that of the ZnO thin film,
Since the transverse wave component propagates in the region where the c-axis is oriented in the vertical direction, the bulk acoustic wave transducer 5 having both longitudinal wave and transverse wave components can be obtained by using the aluminum electrode 3 and the electrode 7 as the input electrodes.
【００１８】また、図５に示すものは本発明の別な実施
例によるＺｎＯ薄膜構造体８を示す断面図である。この
実施例にあっては、ガラス基板９の表面にＮｉＣｒ電極
１０とＴａ電極１１とを区分的に形成している。さら
に、このＮｉＣｒ電極１０及びＴａ電極１１の上には適
宜厚みのＺｎＯ薄膜４が成膜させられている。このよう
にして形成されたＺｎＯ薄膜構造体８においては、Ｎｉ
Ｃｒ電極１０の上に成膜された領域とＴａ電極１１の上
に成膜された領域とでは、いずれもｃ軸はガラス基板９
の表面に対して垂直方向となっているが、その向きは互
いに逆向きとなっている。FIG. 5 is a sectional view showing a ZnO thin film structure 8 according to another embodiment of the present invention. In this embodiment, the NiCr electrode 10 and the Ta electrode 11 are separately formed on the surface of the glass substrate 9. Further, a ZnO thin film 4 having an appropriate thickness is formed on the NiCr electrode 10 and the Ta electrode 11. In the ZnO thin film structure 8 thus formed, Ni
In both the region formed on the Cr electrode 10 and the region formed on the Ta electrode 11, the c-axis is the glass substrate 9
The direction is perpendicular to the surface of, but the directions are opposite to each other.
【００１９】これはエッチピット観察により確認した。
この場合も、ガラス基板の表面全体にＮｉＣｒ電極を形
成し、その上にＺｎＯ薄膜を成膜させた試料（ＺｎＯ／
ＮｉＣｒ／ガラス試料）と、ガラス基板の表面全体にＴ
ａ電極を形成し、その上にＺｎＯ薄膜を成膜させた試料
（ＺｎＯ／Ｔａ／ガラス試料）とを作製し、そのエッチ
ピット観察を行なった。図６はＺｎＯ／ＮｉＣｒ／ガラ
ス試料のエッチピット写真であり、図７はＺｎＯ／Ｔａ
／ガラス試料のエッチピット写真である。図６及び図７
のエッチピット写真から分かるように、ＺｎＯ／ＮｉＣ
ｒ／ガラス試料とＺｎＯ／Ｔａ／ガラス試料とではエッ
チピット構造が異なっており、詳細は省略するが、図６
のエッチピット写真に表われているものはＺｎＯ薄膜の
うちのＯ原子面で、図７のエッチピット写真に表われて
いるものはＺｎＯ薄膜のうちのＺｎ原子面であると考え
られる。従って、図５に示すＺｎＯ薄膜構造体８では、
上記のようにｃ軸が垂直方向を向いており、しかもＮｉ
Ｃｒ電極１０の領域とＴａ電極１１の領域とでｃ軸方向
が反転していると考えられる。なお、Ｘ線回折により図
６と図７はいずれもｃ軸配向（００２）していることを
確認している。This was confirmed by observing etch pits.
Also in this case, a NiCr electrode was formed on the entire surface of the glass substrate, and a ZnO thin film was formed on the NiCr electrode (ZnO /
NiCr / glass sample) and T on the entire surface of the glass substrate
A sample (ZnO / Ta / glass sample) in which an a-electrode was formed and a ZnO thin film was formed thereon was prepared, and its etch pits were observed. 6 is an etch pit photograph of ZnO / NiCr / glass sample, and FIG. 7 is ZnO / Ta.
/ It is an etch pit photograph of a glass sample. 6 and 7
As you can see from the etch pit photo of ZnO / NiC
Although the r / glass sample and the ZnO / Ta / glass sample have different etch pit structures, details thereof will be omitted.
It is considered that what is shown in the etch pit photograph of Fig. 7 is the O atomic plane of the ZnO thin film, and what is shown in the etch pit photograph of Fig. 7 is the Zn atomic plane of the ZnO thin film. Therefore, in the ZnO thin film structure 8 shown in FIG.
As mentioned above, the c-axis is oriented vertically, and
It is considered that the c-axis direction is reversed between the region of the Cr electrode 10 and the region of the Ta electrode 11. It is confirmed by X-ray diffraction that both c-axis orientation (002) is shown in FIGS. 6 and 7.
【００２０】また、図８に示すものは本発明のさらに別
な実施例によるＺｎＯ薄膜構造体１２を示す断面図であ
る。この実施例にあっては、ガラス基板９の表面に部分
的にＮｉＣｒ電極１０を形成している。さらに、このガ
ラス基板９の表面には、ＮｉＣｒ電極１０の上から適宜
厚みのＺｎＯ薄膜４がエピタキシャル成長させられてい
る。このようにして形成されたＺｎＯ薄膜構造体１２に
おいては、第２の実施例と同様、ＮｉＣｒ電極１０の上
に成膜された領域とガラス基板９の上に直接成膜された
領域とでは、いずれもｃ軸はガラス基板９の表面に対し
て垂直方向となっているが、その向きは互いに逆向きと
なっている。FIG. 8 is a sectional view showing a ZnO thin film structure 12 according to still another embodiment of the present invention. In this embodiment, the NiCr electrode 10 is partially formed on the surface of the glass substrate 9. Further, on the surface of the glass substrate 9, a ZnO thin film 4 having an appropriate thickness is epitaxially grown on the NiCr electrode 10. In the ZnO thin film structure 12 formed in this way, as in the second embodiment, in the region formed on the NiCr electrode 10 and the region formed directly on the glass substrate 9, In both cases, the c-axis is perpendicular to the surface of the glass substrate 9, but the directions are opposite to each other.
【００２１】これらのＺｎＯ薄膜構造体の他の応用とし
ては、例えば広帯域光偏向器が考えられる。ＺｎＯ薄膜
の配向方向が異なると、その偏向特性、特に偏向周波数
が異なるので、２種以上の配向を有する薄膜構造体を用
いることにより広帯域の光偏向器を製作することができ
る。また、フォトルミネセンス用のＺｎＯ薄膜として用
いた場合も、配向の異なる領域でその発光波長もシフト
すると考えられるので、発光波長幅の広いフォトルミネ
センスを実現することができる。Another application of these ZnO thin film structures is, for example, a broadband optical deflector. If the orientation direction of the ZnO thin film is different, the deflection characteristics, especially the deflection frequency, are different. Therefore, by using a thin film structure having two or more kinds of orientations, a broadband optical deflector can be manufactured. Also, when used as a ZnO thin film for photoluminescence, it is considered that the emission wavelength also shifts in regions with different orientations, so that photoluminescence having a wide emission wavelength width can be realized.
【００２２】なお、上記実施例では、薄膜としてＺｎＯ
薄膜を用いた場合について説明したが、薄膜材料である
ＺｎＯの化学的反応を利用したものではないので、基板
材料や金属材料を選択することによりＡｌＮなどの他の
薄膜についても実施できることはいうまでもない。そし
て、他の薄膜材料を用いることにより、デバイスとして
の応用もより広範となる。In the above embodiment, ZnO is used as the thin film.
Although the case where a thin film is used has been described, it is needless to say that it can be performed for other thin films such as AlN by selecting a substrate material or a metal material because it does not utilize the chemical reaction of ZnO which is a thin film material. Nor. Then, by using other thin film materials, the application as a device becomes wider.
【００２３】[0023]
【発明の効果】本発明によれば、新規な薄膜構造体を製
作することができ、同一基板上に２つ以上の結晶配向を
有する配向膜、つまり異なる結晶配向が混在した同種配
向膜を得ることができる。また、基板と金属との組合わ
せや、異種金属の組合わせを選択することにより配向膜
の各結晶配向の向きを自由にコントロールすることがで
きる。According to the present invention, a novel thin film structure can be manufactured, and an alignment film having two or more crystal orientations on the same substrate, that is, an alignment film of the same kind in which different crystal orientations are mixed is obtained. be able to. Further, the orientation of each crystal orientation of the orientation film can be freely controlled by selecting the combination of the substrate and the metal or the combination of the different metals.
【００２４】このようにして結晶配向の混在した配向膜
は、結晶配向の異なる領域でその物理的、電気的特性や
光学特性なども異なるので、各種デバイスに応用するこ
とができ、例えばバルク波トランスジューサのような電
子部品や広帯域光偏向器のような光学部品に用いること
ができる。In this way, the orientation film in which the crystal orientations are mixed has different physical and electrical characteristics and optical characteristics in the regions having different crystal orientations, so that it can be applied to various devices. For example, a bulk wave transducer. Can be used for electronic parts such as the above and optical parts such as a broadband optical deflector.
【図１】本発明の一実施例による薄膜構造体を示す概略
断面図である。FIG. 1 is a schematic cross-sectional view showing a thin film structure according to an embodiment of the present invention.
【図２】Ｒ面サファイア基板表面に成膜されたＺｎＯ薄
膜のＸ線回折スペクトルを示す図である。FIG. 2 is a diagram showing an X-ray diffraction spectrum of a ZnO thin film formed on the surface of an R-plane sapphire substrate.
【図３】Ｒ面サファイア基板表面のＡｌ電極上に成膜さ
れたＺｎＯ薄膜のＸ線回折スペクトルを示す図である。FIG. 3 is a diagram showing an X-ray diffraction spectrum of a ZnO thin film formed on an Al electrode on the surface of an R-plane sapphire substrate.
【図４】同上の薄膜構造体を用いたバルク波トランスジ
ューサの一部分を示す概略断面図である。FIG. 4 is a schematic sectional view showing a part of a bulk wave transducer using the above thin film structure.
【図５】本発明の別な実施例による薄膜構造体を示す概
略断面図である。FIG. 5 is a schematic cross-sectional view showing a thin film structure according to another embodiment of the present invention.
【図６】ガラス基板表面のＮｉＣｒ電極上に成膜された
ＺｎＯ薄膜のエッチピット構造を示す写真である。FIG. 6 is a photograph showing an etch pit structure of a ZnO thin film formed on a NiCr electrode on the surface of a glass substrate.
【図７】ガラス基板表面のＴａ電極上に成膜されたＺｎ
Ｏ薄膜のエッチピット構造を示す写真である。FIG. 7: Zn formed on a Ta electrode on the surface of a glass substrate
3 is a photograph showing an etch pit structure of an O thin film.
【図８】本発明のさらに別な実施例による薄膜構造体を
示す概略断面図である。FIG. 8 is a schematic sectional view showing a thin film structure according to still another embodiment of the present invention.
２ Ｒ面サファイア基板 ３ アルミニウム電極 ４ ＺｎＯ薄膜 ９ ガラス基板 １０ ＮｉＣｒ電極 １１ Ｔａ電極 2 R-plane sapphire substrate 3 Aluminum electrode 4 ZnO thin film 9 Glass substrate 10 NiCr electrode 11 Ta electrode
Claims (5)
属層の上から基板の上に配向膜を形成した薄膜構造体で
あって、 金属層上に形成されている領域と基板上に形成されてい
る領域とで当該配向膜の結晶配向が異なっていることを
特徴とする薄膜構造体。1. A thin film structure in which a metal layer is partially formed on a surface of a substrate, and an alignment film is formed on the metal layer, the region being formed on the metal layer and the substrate. A thin film structure characterized in that the crystal orientation of the orientation film is different from that of the region formed in the.
これらの金属層の上から基板の上方に配向膜を形成した
薄膜構造体であって、 異種の金属層の上に形成されている領域で当該配向膜の
結晶配向が異なっていることを特徴とする薄膜構造体。2. Forming two or more kinds of metal layers on the surface of the substrate,
A thin film structure in which an alignment film is formed from above these metal layers to above the substrate, characterized in that the crystal orientation of the alignment film is different in the regions formed on different metal layers. Thin film structure.
とする請求項１又は２に記載の薄膜構造体。3. The thin film structure according to claim 1, wherein the alignment film is a ZnO layer.
を用いたことを特徴とする電子部品。4. An electronic component using the thin film structure according to claim 1, 2.
を用いたことを特徴とする光学部品。5. An optical component using the thin film structure according to claim 1, 2.
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