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JPH08297151A - Semiconductor device inspecting handler - Google Patents

Semiconductor device inspecting handler

Info

Publication number
JPH08297151A
JPH08297151A JP7103843A JP10384395A JPH08297151A JP H08297151 A JPH08297151 A JP H08297151A JP 7103843 A JP7103843 A JP 7103843A JP 10384395 A JP10384395 A JP 10384395A JP H08297151 A JPH08297151 A JP H08297151A
Authority
JP
Japan
Prior art keywords
base substrate
semiconductor device
handler
probe needles
reinforcing plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7103843A
Other languages
Japanese (ja)
Inventor
Hidenobu Yamaguchi
英伸 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Original Assignee
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Manufacturing Co Ltd, Kansai Nippon Electric Co Ltd filed Critical Renesas Semiconductor Manufacturing Co Ltd
Priority to JP7103843A priority Critical patent/JPH08297151A/en
Publication of JPH08297151A publication Critical patent/JPH08297151A/en
Pending legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To provide an inspecting handier used for selecting electrical characteristics in the manufacturing process of a TAB type semiconductor device. CONSTITUTION: Many sets of probe needles 8 are diagonally fixed to a base substrate 6 on one face of the base substrate 6 made of an insulating member so that the idle ends of the probe needles 8 of each set are nearly on a straight line at prescribed intervals, and electrode pads 6d electrically connected to the probe needles 8 are formed on the other face of the base substrate 6. The idle ends of the probe needles 8 are brought into electric and elastic contact with the electrodes of semiconductor devices, and the probe needles 8 are connected to an external measuring device via contact pieces 10 kept in contact with the electrode pads 6d in this semiconductor device inspecting hander. A reinforcing plate 14 nearly equal to the base substrate 6 in diameter and opened with through holes 14b to be inserted with the elastic contact pieces 10 is fixed to the face of the base substrate 6 where the electrode pads 6d are formed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はTAB式半導体装置の製
造過程で電気的特性選別に用いられる検査用ハンドラに
関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inspection handler used for selecting electrical characteristics in the process of manufacturing a TAB type semiconductor device.

【0002】[0002]

【従来の技術】半導体装置は製造過程で電気的特性が測
定されその結果により等級選別、良否判定され、良品の
みが出荷される。ここで数百本の電極を有する半導体装
置は通常図4及び図5に示すTAB構造のものが用いら
れる。図において、1は長尺の絶縁テープで、両側に沿
って送り用の孔1a、1aを穿設するとともに、その中
間に矩形状の透孔1bをその長手方向に所定の間隔で穿
設している。2はこの絶縁テープ1に積層した導電箔を
エッチングして形成した導電パターンで、透孔1b内に
延在するインナリード2aと、外部接続されるアウタリ
ード2bとを含む。この絶縁テープ1と導電パターン2
の積層体でTABテープ3を構成している。4は透孔1
b内に配置され、上面に多数の電極4aを形成した半導
体ペレットを示す。
2. Description of the Related Art In a semiconductor device, electrical characteristics are measured in a manufacturing process, grades are selected based on the result, and quality is judged, and only good products are shipped. Here, as the semiconductor device having several hundred electrodes, the TAB structure shown in FIGS. 4 and 5 is usually used. In the figure, reference numeral 1 designates a long insulating tape which is provided with feed holes 1a and 1a along both sides thereof, and rectangular through holes 1b are provided in the middle thereof at predetermined intervals in the longitudinal direction. ing. Reference numeral 2 denotes a conductive pattern formed by etching a conductive foil laminated on the insulating tape 1, and includes an inner lead 2a extending in the through hole 1b and an outer lead 2b externally connected. This insulating tape 1 and conductive pattern 2
The TAB tape 3 is composed of the above laminated body. 4 is through hole 1
2B shows a semiconductor pellet which is disposed in b and has a large number of electrodes 4a formed on its upper surface.

【0003】この半導体ペレット4の電極4aとインナ
リード2aとは位置決め重合され電気的に接続され、半
導体装置中間構体5(以下単に中間構体という)を構成
している。この中間構体5は必要に応じて半導体ペレッ
ト4の表面が樹脂被覆により防湿処理され、各半導体装
置毎に電気的な測定がされて良否判別され、不良品が切
断除去されて良品のみリールに巻取られ、絶縁テープ1
から所定形状に打ち抜かれて液晶表示装置などに実装さ
れる。この中間構体5の検査用ハンドラの一例を図6及
び図7から説明する。図において、6は絶縁部材、例え
ばガラスエポキシ樹脂からなる厚さ3.5mm、直径2
00mm程度のベース基板で、中央部に矩形状の透孔6
a、6aを平行配列して穿設している。7はセラミック
製の矩形状の支持板で、前記透孔6a、6aと対応する
部分に透孔7a、7aをを穿設し、ペース基板6の表面
に接着固定されている。
The electrodes 4a of the semiconductor pellets 4 and the inner leads 2a are positioned and polymerized and electrically connected to each other to form a semiconductor device intermediate structure 5 (hereinafter simply referred to as an intermediate structure). If necessary, the surface of the semiconductor pellet 4 of the intermediate structure 5 is moisture-proofed by resin coating, and each semiconductor device is electrically measured to determine whether it is good or bad, and the defective product is cut and removed, and only the good product is wound on the reel. Insulation tape 1
Then, it is punched into a predetermined shape and mounted on a liquid crystal display device or the like. An example of the inspection handler for the intermediate structure 5 will be described with reference to FIGS. 6 and 7. In the figure, 6 is an insulating member, for example, glass epoxy resin having a thickness of 3.5 mm and a diameter of 2
A base substrate of about 00 mm with a rectangular through hole 6 in the center
The holes a and 6a are arranged in parallel. Reference numeral 7 denotes a ceramic rectangular support plate having through holes 7a, 7a formed at portions corresponding to the through holes 6a, 6a, and fixed to the surface of the pace substrate 6 by adhesion.

【0004】8はこのベース基板6の一方の面(上面)
6bに配列された多数本のプローブニードルで、タング
ステンなどの耐摩耗性に優れ弾性力を有する部材よりな
り、先端に向かってテーパ状に成形され、各遊端8aを
平面的に見て略一直線上に配列させ中間部をベース基板
6に対して傾斜させ、傾斜した中間部を支持板7に支持
させている。このプローブニードル8の遊端8aは透孔
6aから透視される。9はベース基板6の周縁部を支持
する突壁9aを設けたベースブロック、10はベースブ
ロック9の突壁9a内方に植立された接触子で、ベース
基板6の他の面(下面)6cに弾性接触されベース基板
6を貫通してその表裏面6b、6cを電気的に接続した
導電パターン(図示せず)を介してプローブニードル8
に電気的に接続されている。またこの接触子10は外部
の測定用の電源や測定装置に接続されている。
Reference numeral 8 denotes one surface (upper surface) of the base substrate 6.
A large number of probe needles arranged in 6b. The probe needles are made of a material having excellent wear resistance and elastic force, such as tungsten, and are formed in a taper shape toward the tip. The intermediate portions are arranged on a line and are inclined with respect to the base substrate 6, and the inclined intermediate portions are supported by the support plate 7. The free end 8a of the probe needle 8 is seen through the through hole 6a. Reference numeral 9 is a base block provided with a projecting wall 9a that supports the peripheral edge of the base substrate 6, and 10 is a contactor that is erected inside the projecting wall 9a of the base block 9, and is the other surface (lower surface) of the base substrate 6. Probe needle 8 through a conductive pattern (not shown) that is elastically contacted with 6c and penetrates through base substrate 6 to electrically connect front and back surfaces 6b and 6c thereof.
Is electrically connected to Further, the contact 10 is connected to an external power source for measurement and a measuring device.

【0005】このハンドラ11は、ガイド機構(図示せ
ず)によってガイドされ移動する中間構体5の移動経路
の所定位置下方に配置され、中間構体5とハンドラ11
とは相対的に上下動して近接離隔する。また中間構体5
の上方には電極(導電パターン)とプローブニードル8
の遊端8aとを位置決め重合させた状態で中間構体5を
押圧してプローブニードル8を所定深さ沈み込ませる押
圧ブロック12が配置されている。以下にこのハンドラ
11の動作を説明する。まず、中間構体5の半導体ペレ
ット4を所定位置に停止させ、ハンドラ11のプローブ
ニードル8の遊端8aを中間構体5の電極に近接させ
て、ベース基板6の透孔6aからテレビカメラ(図示せ
ず)によりアウタリード2bと遊端8aの位置を観察し
図示しない位置決め機構により正確に位置決めして、ハ
ンドラ11と中間構体5をさらに近接させ、プローブニ
ードル遊端8aをアウタリード2bに当接させる。
The handler 11 is arranged below a predetermined position on the moving path of the intermediate structure 5 which is guided and moved by a guide mechanism (not shown), and the intermediate structure 5 and the handler 11 are arranged.
And move up and down relatively and separate from each other. Also intermediate structure 5
The electrode (conductive pattern) and the probe needle 8 are located above the
A pressing block 12 is arranged to press the intermediate structure 5 in a state where the free end 8a and the free end 8a are overlapped with each other to sink the probe needle 8 to a predetermined depth. The operation of the handler 11 will be described below. First, the semiconductor pellet 4 of the intermediate structure 5 is stopped at a predetermined position, the free end 8a of the probe needle 8 of the handler 11 is brought close to the electrode of the intermediate structure 5, and the television camera (not shown) is made through the through hole 6a of the base substrate 6. By observing the positions of the outer lead 2b and the free end 8a, the handler 11 and the intermediate structure 5 are brought closer to each other and the probe needle free end 8a is brought into contact with the outer lead 2b.

【0006】そして、この当接面より例えば100μm
程度の所定深さプローブニードル遊端8aが沈み込むよ
うに中間構体5を押圧ブロック12にて押し下げ、プロ
ーブニードル8に弾性力を生じさせ、アウタリード2b
との接触を確実にし、接触抵抗を可及的に低くする。こ
のようにして、外部の測定装置と中間構体5との電気的
接続を完了した状態で、測定装置を作動させて測定しそ
の結果により中間構体5の良否を判別する。測定が終了
すると、押圧ブロック12を上昇させ、中間構体5から
プローブニードル8を離隔させ、中間構体5を所定ピッ
チ移動させ、次の半導体ペレットを所定位置に位置決め
して上記動作を繰り返す。このハンドラ11はプローブ
ニードル8を中間構体5の導電パターン配置構造や寸法
形状に対応して固定したベース基板6を用意し、測定す
る中間構体5に対応したベース基板6を選択してベース
ブロック10に交換取り付けし、種々の中間構体5に対
応している。
Then, from this contact surface, for example, 100 μm
The intermediate structure 5 is pushed down by the pressing block 12 so that the free end 8a of the probe needle 8 sinks to a predetermined depth, and the probe needle 8 is caused to have an elastic force.
Ensure contact with, and make contact resistance as low as possible. In this way, with the electrical connection between the external measuring device and the intermediate structure 5 completed, the measuring device is operated to perform measurement, and the quality of the intermediate structure 5 is determined based on the result. When the measurement is completed, the pressing block 12 is raised, the probe needle 8 is separated from the intermediate structure 5, the intermediate structure 5 is moved by a predetermined pitch, the next semiconductor pellet is positioned at a predetermined position, and the above operation is repeated. The handler 11 prepares a base substrate 6 on which the probe needles 8 are fixed according to the conductive pattern arrangement structure and dimensions of the intermediate structure 5, selects the base substrate 6 corresponding to the intermediate structure 5 to be measured, and selects the base block 10. It is attached by exchanging with and is compatible with various intermediate structures 5.

【0007】一例として、液晶表示装置の駆動用半導体
装置の場合、入力側で30乃至40本、出力側で約20
0本の導電パターンが形成されており、液晶表示装置へ
の実装性の点から、入出力のアウタリードは例えば60
mm離隔して平行な直線上に配列されている。このよう
な半導体装置用ハンドラはプローブニードル8もこれに
対応して配置されるが、数の多い出力側のプローブニー
ドル8は遊端8aを千鳥状に配置して隣接するプローブ
ニードル8、8が短絡しないようにしている。
As an example, in the case of a semiconductor device for driving a liquid crystal display device, 30 to 40 lines are provided on the input side and about 20 lines are provided on the output side.
0 conductive patterns are formed, and from the viewpoint of mountability in a liquid crystal display device, the input / output outer leads are, for example, 60
They are arranged on parallel straight lines separated by mm. In such a handler for a semiconductor device, the probe needles 8 are also arranged correspondingly. However, the probe needles 8 on the output side, which have a large number, have the free ends 8a arranged in a staggered manner and the adjacent probe needles 8, 8 are arranged. I try not to short circuit.

【0008】[0008]

【発明が解決しようとする課題】ところで、このハンド
ラ11はプローブニードル8を中間構体5との当接面か
らさらに押下させることにより弾性力を生じさせ、接触
圧を高め接触抵抗を下げているが、プローブニードル8
の一本当たりの接触圧を数10乃至100gとすると、
前記液晶表示装置用半導体装置の場合、入力側プローブ
ニードルには300乃至1000gの加圧力が、出力側
プローブニードルには2Kg乃至20Kgの加圧力がそ
れぞれかかり、それらの力は、ベース基板6のプローブ
ニードル固定部にかかる。一方、多数のプローブニード
ル8は2群に分けられ、互いに平行配置されているた
め、上記加圧力はベース基板6を不均一に押圧し、ベー
ス基板6の中央部を傾斜変形させプローブニードル8と
中間構体5の電極との接触をばらつかせ、繰返し使用に
より、ベース基板6の変形が残留するという問題があっ
た。
By the way, the handler 11 further generates the elastic force by further pressing the probe needle 8 from the contact surface with the intermediate structure 5, thereby increasing the contact pressure and decreasing the contact resistance. , Probe needle 8
If the contact pressure per one is several 10 to 100 g,
In the case of the semiconductor device for a liquid crystal display device, a pressure of 300 to 1000 g is applied to the input side probe needle, and a pressure of 2 kg to 20 kg is applied to the output side probe needle, respectively, and these forces are applied to the probe of the base substrate 6. Takes over the needle fixing part. On the other hand, since the large number of probe needles 8 are divided into two groups and arranged in parallel to each other, the above-mentioned pressing force non-uniformly presses the base substrate 6 and causes the center portion of the base substrate 6 to be inclined and deformed, thereby forming the probe needles 8. There is a problem that the base substrate 6 remains deformed by repeated contact with the electrodes of the intermediate structure 5 and by repeated use.

【0009】そのため、プローブニードル8の数が多
く、しかもベース基板6上で偏在配置されるものでは、
図8に示すように、ベース基板6の裏面に補強部材とし
ての補強板13を固定している。この補強板13は、厚
み5mm程度の高張力のステンレス鋼などが用いられ、
ベース基板6の透孔6a部分に透孔13aを穿設し、接
触子10の障害とならないように、ベース基板5の中央
部にネジ止めなどにより固定されている。これにより、
ベース基板6中央部の周辺部を基準とした変形量が10
0μm程度から20乃至30μm程度に軽減でき、補強
部材としての効果は確認できたが、変形はプローブ数の
多い出力側で大きく、従って出力側プローブニードル8
の接触圧が低下し接触抵抗も大きくなる虞があり、しか
も出力側のプローブニードルに流れる電流が大きいた
め、接触抵抗による電圧降下が測定結果に影響を及ぼす
虞があるため、より一層の改善が望まれていた。
Therefore, in the case where the number of probe needles 8 is large and the probe needles 8 are unevenly arranged on the base substrate 6,
As shown in FIG. 8, a reinforcing plate 13 as a reinforcing member is fixed to the back surface of the base substrate 6. The reinforcing plate 13 is made of high-tensile stainless steel having a thickness of about 5 mm.
A through hole 13a is formed in the through hole 6a of the base substrate 6, and is fixed to the central portion of the base substrate 5 by screwing or the like so as not to obstruct the contact 10. This allows
The amount of deformation with respect to the peripheral portion of the central portion of the base substrate 6 is 10
Although it was possible to reduce the size from about 0 μm to about 20 to 30 μm and the effect as a reinforcing member was confirmed, the deformation was large on the output side where the number of probes was large, and therefore the output side probe needle 8
The contact pressure may decrease and the contact resistance may increase, and since the current flowing through the probe needle on the output side is large, the voltage drop due to the contact resistance may affect the measurement results. Was wanted.

【0010】そのため、出願人はプローブニードル8が
中間構体5に当接した時に補強板13を外部の係止部材
により係止して変形を抑制することを提案している。
(特願平6−203554号参照) これにより、補強板13は係止部材によって係止され平
行状態を保つためベース基板6の反りを防止できる。し
かしながら、電極数のより多い中間構体5ではこれに対
応して接触子10も増設する必要があり、接触子10を
増設するとプローブニードル8が中間構体5に当接して
いない状態で、ベース基板6は周縁部が押し上げられた
状態となり、接触子10の配列が偏っているとベース基
板6が傾き、補強板13と係止部材の平行状態を保つこ
とが困難で、プローブニードル8が中間構体5に接離す
ることによって、ベース基板6が傾き、プローブニード
ル8の接触の状態がばらつくという問題があった。ま
た、プローブニードル8と電気的に接続される接触子1
0は、プローブニードル8が最も多い中間構体5に合わ
せて、その数が決定され、ベースブロック8の周縁に沿
って配置されるが、プローブ数が200本を越えると接
触子10をベースブロック8の外周から内方に向かって
多重に配置しなければならず、プローブニードル数の少
ないベース基板では、補強部材を必要としないにもかか
わらず接触子10から受ける押圧力によって変形すると
いう問題もあった。
Therefore, the applicant has proposed that when the probe needle 8 contacts the intermediate structure 5, the reinforcing plate 13 is locked by an external locking member to suppress deformation.
(See Japanese Patent Application No. 6-203554) As a result, the reinforcing plate 13 is locked by the locking member and is maintained in the parallel state, so that the warp of the base substrate 6 can be prevented. However, in the intermediate structure 5 having a larger number of electrodes, it is necessary to add the contact 10 correspondingly, and when the contact 10 is added, the probe needle 8 is not in contact with the intermediate structure 5 and the base substrate 6 Becomes a state where the peripheral portion is pushed up, and if the arrangement of the contacts 10 is biased, the base substrate 6 tilts, and it is difficult to keep the reinforcing plate 13 and the locking member in a parallel state. There is a problem in that the base substrate 6 tilts and the contact state of the probe needle 8 varies due to contact with and separation from the base plate 6. Further, the contactor 1 electrically connected to the probe needle 8.
The number of 0 is determined according to the intermediate structure 5 having the most probe needles 8 and is arranged along the peripheral edge of the base block 8. However, when the number of probes exceeds 200, the contact 10 is moved to the base block 8 Must be arranged in multiple layers from the outer circumference to the inner side, and there is also a problem that the base substrate having a small number of probe needles is deformed by the pressing force received from the contact 10 although a reinforcing member is not required. It was

【0011】[0011]

【課題を解決するための手段】本発明は上記課題の解決
を目的として提案されたもので、絶縁部材からなるベー
ス基板の一方の面に、多数本一組のプローブニードルを
多数組、各組のプローブニードル遊端を所定の間隔をお
いて略一直線上に配列させかつベース基板に対して傾斜
固定するとともにベース基板の他の面に各プローブニー
ドルと電気的に接続された電極パッドを形成し、各プロ
ーブニードルの遊端を半導体装置の電極に電気的かつ弾
性的に接触させ、前記電極パッドに当接させた弾性接触
子を介して外部の測定装置に接続するようにした半導体
装置検査用ハンドラにおいて、上記ベース基板の電極パ
ッド形成面に、ベース基板とほぼ同じ径で弾性接触子が
挿通する透孔を開口した補強板を固定したことを特徴と
する半導体装置検査用ハンドラを提供する。
SUMMARY OF THE INVENTION The present invention has been proposed for the purpose of solving the above-mentioned problems. A plurality of probe needles, one set of a plurality of sets, are provided on one surface of a base substrate made of an insulating member. Of the probe needles are arranged in a straight line at a predetermined interval and fixed obliquely with respect to the base substrate, and electrode pads electrically connected to the probe needles are formed on the other surface of the base substrate. For testing a semiconductor device, the free end of each probe needle is electrically and elastically contacted with the electrode of the semiconductor device, and the probe needle is connected to an external measuring device through an elastic contactor abutting against the electrode pad. In the handler, a reinforcing plate having a through hole through which an elastic contact is inserted and having a diameter substantially the same as that of the base substrate is fixed to the electrode pad forming surface of the base substrate. To provide a use handler.

【0012】[0012]

【作用】上記課題解決手段により、ベース基板全体の強
度を向上できるからベース基板の両面からかかる押圧力
に対してベース基板の反りを防止できプローブニードル
の接触圧のばらつきに基づく測定不良を防止できる。
By the means for solving the above problems, the strength of the entire base substrate can be improved, so that the base substrate can be prevented from warping against the pressing force applied from both sides of the base substrate, and the measurement failure due to the variation of the contact pressure of the probe needle can be prevented. .

【0013】[0013]

【実施例】以下に本発明の実施例を図1及び図2から説
明する。図において、5は中間構体、6はベース基板、
7は支持板、8はプローブニードルで、それぞれの細部
で図6と同一部分には同一符号を付し重複する説明を省
略する。図中、14は本発明による補強板で、ベース基
板6とほぼ同じ径で、ベース基板6を通してプローブニ
ードル8の遊端と中間構体5の電極位置を観察するため
の貫通孔14aと、ベース基板6の電極パッド6dに当
接する弾性接触子10が挿通する貫通孔14bを開口
し、ベース基板6の電極パッド形成面に固定されてい
る。この補強板14は例えば厚さ3mm程度のステンレ
ス鋼板で、周縁にベース基板に取り付けるための穴14
cを数カ所穿設している。
Embodiments of the present invention will be described below with reference to FIGS. 1 and 2. In the figure, 5 is an intermediate structure, 6 is a base substrate,
Reference numeral 7 is a support plate, and 8 is a probe needle. In the respective details, the same parts as those in FIG. In the figure, 14 is a reinforcing plate according to the present invention, having a diameter substantially the same as that of the base substrate 6, a through hole 14a for observing the free end of the probe needle 8 and the electrode position of the intermediate structure 5 through the base substrate 6, and the base substrate. The through hole 14b through which the elastic contact 10 abutting on the electrode pad 6d of 6 is inserted and is fixed to the electrode pad forming surface of the base substrate 6. The reinforcing plate 14 is, for example, a stainless steel plate with a thickness of about 3 mm, and has holes 14 for attaching to the base substrate at the periphery.
c is drilled in several places.

【0014】また接触子10が挿通する貫通孔14bは
補強板14の周縁に複数に分割され円弧状に穿設されて
いる。この補強板14が固定されたベース基板6はベー
スブロック9に取り付けられ、接触子10がベース基板
6の電極パッドに弾性接触し、プローブニードル8を外
部の電源を含む測定装置に接続する。電極数の多い中間
構体5に対応するため弾性接触子10を増設しなければ
ならない場合でも、ベースブロック9に固定されたベー
ス基板6は補強板14によって基板の全面が補強されて
いるため、平坦な状態を保つことができ、さらに測定時
にプローブニードル8が中間構体5と当接してベース基
板6に過大な力がかかってもベース基板6の全面をカバ
ーする補強板14により、撓み変形が防止される。この
ように本発明による半導体装置検査用ハンドラは、両面
から偏ってかかる力に対して、ベース基板の変形を防止
できるため、プローブニードル8と中間構体5の電気的
接続が確実にでき、正確な測定ができる。
Further, the through hole 14b through which the contact 10 is inserted is divided into a plurality of arcs in the peripheral edge of the reinforcing plate 14. The base substrate 6 to which the reinforcing plate 14 is fixed is attached to the base block 9, and the contact 10 makes elastic contact with the electrode pad of the base substrate 6 to connect the probe needle 8 to a measuring device including an external power source. Even if the elastic contactor 10 has to be additionally installed to support the intermediate structure 5 having a large number of electrodes, the base plate 6 fixed to the base block 9 is flat because the entire surface of the base plate is reinforced by the reinforcing plate 14. Even if the probe needle 8 contacts the intermediate structure 5 and an excessive force is applied to the base substrate 6 during measurement, the reinforcing plate 14 that covers the entire surface of the base substrate 6 prevents bending deformation. To be done. As described above, the semiconductor device inspection handler according to the present invention can prevent the base substrate from being deformed against a biased force applied from both sides. Therefore, the electrical connection between the probe needle 8 and the intermediate structure 5 can be surely performed, and the accuracy can be improved. You can measure.

【0015】また、各プローブニードル8の接触圧を均
一にできるから、プローブニードル8の摩耗も偏りがな
く、プローブニードル8の長寿命化が図れ、長期間に亙
って正確な測定ができる。また、200本程度の電極数
に対して直径200mm程度のベース基板で対応してい
るが電極数が400本を越えると直径400乃至500
mmのベース基板を使用する必要があり、このように径
大のベース基板に対して本発明は顕著な効果をもたらす
ことができる。図3は本発明の変形例を示す。図におい
て図1と同一符号は同一物を示す。図中、15はベース
基板6の裏面に固定された補強板で、図示例では部分的
に表示しているが、ハニカム状の貫通孔15aが多数全
面に形成されている。
Further, since the contact pressure of each probe needle 8 can be made uniform, the wear of the probe needle 8 is not uneven, the life of the probe needle 8 can be extended, and accurate measurement can be performed over a long period of time. Also, a base substrate having a diameter of about 200 mm corresponds to the number of electrodes of about 200, but when the number of electrodes exceeds 400, the diameter of 400 to 500 is obtained.
It is necessary to use a base substrate of mm, and the present invention can bring a remarkable effect to the base substrate having such a large diameter. FIG. 3 shows a modification of the present invention. In the figure, the same symbols as in FIG. 1 indicate the same items. In the figure, reference numeral 15 is a reinforcing plate fixed to the back surface of the base substrate 6, and although it is partially shown in the illustrated example, a large number of honeycomb-shaped through holes 15a are formed on the entire surface.

【0016】この貫通孔15aは、少なくとも一つの弾
性接触子10が挿通する径に設定され、ベース基板6の
プローブニードル8の遊端8aを覗く透孔6aに対して
その光透過窓を多数に区分するような径に設定される。
この補強板15は貫通孔15aが多数形成されているた
め軽く、貫通孔の形状をハニカム状とすることにより各
貫通孔15a間の厚みが薄くても十分な強度が得られ、
ベース基板6の強度を維持して軽量化できる。尚、本発
明は上記実施例に限定されることなく、例えば貫通孔1
5aはハニカム状だけでなく、三角形、円形、菱形、平
行四辺形などでもよい。また、補強板14、15の貫通
孔14a、15aである開口部はその周縁に内方の環状
のフランジあるいは軸方向に筒部を設け強度を向上させ
ることができる。
The through hole 15a is set to have a diameter through which at least one elastic contact 10 is inserted, and the through hole 6a through which the free end 8a of the probe needle 8 of the base substrate 6 is seen has a large number of light transmitting windows. The diameter is set so as to be divided.
Since the reinforcing plate 15 has a large number of through holes 15a formed therein, the reinforcing plate 15 is light, and by forming the through holes into a honeycomb shape, sufficient strength can be obtained even if the thickness between the through holes 15a is small.
The strength of the base substrate 6 can be maintained and the weight can be reduced. The present invention is not limited to the above-described embodiment, and for example, the through hole 1
5a is not limited to a honeycomb shape, but may be a triangle, a circle, a rhombus, a parallelogram, or the like. Further, the openings, which are the through holes 14a and 15a of the reinforcing plates 14 and 15, may be provided with an inward annular flange or a cylindrical portion in the axial direction at the periphery thereof to improve the strength.

【0017】[0017]

【発明の効果】以上のように本発明によれば、ベース基
板の全面を補強板で補強しその強度を向上させたから、
ベース基板の両面の偏った位置に過大な力が加えられて
も、ベース基板の変形を防止でき、プローブニードルの
高さ位置のばらつきを防止でき、各プローブニードルを
被測定物である半導体装置中間構体の電極に均等な接触
圧で接触させことができ、プローブニードルの摩耗も均
等化できるため、長期間に亙って正確な測定ができる。
As described above, according to the present invention, since the entire surface of the base substrate is reinforced by the reinforcing plate to improve its strength,
Even if an excessive force is applied to uneven positions on both sides of the base substrate, the base substrate can be prevented from being deformed, and the probe needle height positions can be prevented from varying. The electrodes of the structure can be brought into contact with each other with a uniform contact pressure, and the wear of the probe needle can be made uniform, so that accurate measurement can be performed over a long period of time.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明の実施例を示す半導体装置検査用ハン
ドラの側断面図
FIG. 1 is a side sectional view of a semiconductor device inspection handler showing an embodiment of the present invention.

【図2】 図1ハンドラに使用されるの補強板を示す平
面図
FIG. 2 is a plan view showing a reinforcing plate used in FIG. 1 handler.

【図3】 本発明の変形例を示す補強板の平面図FIG. 3 is a plan view of a reinforcing plate showing a modified example of the present invention.

【図4】 TAB式半導体装置中間構体を示す斜視図FIG. 4 is a perspective view showing a TAB type semiconductor device intermediate structure.

【図5】 図4に示す中間構体の側断面図5 is a side sectional view of the intermediate structure shown in FIG.

【図6】 図4中間構体の電気的特性検査に用いられる
ハンドラの側断面図
FIG. 6 is a side sectional view of a handler used to inspect the electrical characteristics of the intermediate structure.

【図7】 図6ハンドラの上面図FIG. 7 is a top view of FIG. 6 handler.

【図8】 補強板にて補強されたベース基板を用いたハ
ンドラの要部側断面図
FIG. 8 is a side sectional view of a main part of a handler using a base substrate reinforced by a reinforcing plate.

【符号の説明】[Explanation of symbols]

6 ベース基板 8 プローブニードル 10 弾性接触子 11 ハンドラ 14 補強板 14b 貫通孔 15 補強板 15a 貫通孔 6 Base Board 8 Probe Needle 10 Elastic Contact 11 Handler 14 Reinforcement Plate 14b Through Hole 15 Reinforcement Plate 15a Through Hole

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】絶縁部材からなるベース基板の一方の面
に、多数本一組のプローブニードルを多数組、各組のプ
ローブニードル遊端を所定の間隔をおいて略一直線上に
配列させかつベース基板に対して傾斜固定するとともに
ベース基板の他の面に各プローブニードルと電気的に接
続された電極パッドを形成し、各プローブニードルの遊
端を半導体装置の電極に電気的かつ弾性的に接触させ、
前記電極パッドに当接させた弾性接触子を介して外部の
測定装置に接続するようにした半導体装置検査用ハンド
ラにおいて、 上記ベース基板の電極パッド形成面に、ベース基板とほ
ぼ同じ径で弾性接触子が挿通する貫通孔を開口した補強
板を固定したことを特徴とする半導体装置検査用ハンド
ラ。
1. A base substrate made of an insulating member, on one surface of which a plurality of sets of a large number of probe needles are set, and the free ends of the probe needles of each set are arranged in a substantially straight line at predetermined intervals, and the base is formed. An electrode pad that is electrically connected to each probe needle is formed on the other surface of the base substrate while tilted and fixed to the substrate, and the free end of each probe needle electrically and elastically contacts the electrode of the semiconductor device. Let
In a semiconductor device inspection handler, which is connected to an external measuring device via an elastic contactor that is in contact with the electrode pad, an elastic contact having a diameter substantially the same as that of the base substrate is made on the electrode pad formation surface of the base substrate. A handler for inspecting a semiconductor device, wherein a reinforcing plate having a through hole through which a child is inserted is fixed.
【請求項2】補強板がハニカム状の貫通孔を多数設けた
ことを特徴とする請求項1に記載の半導体装置検査用ハ
ンドラ。
2. The handler for inspecting a semiconductor device according to claim 1, wherein the reinforcing plate is provided with a large number of through holes having a honeycomb shape.
【請求項3】補強板の貫通孔周縁に補強部を形成したこ
とを特徴とする請求項1に記載の半導体装置の検査用ハ
ンドラ。
3. The handler for inspecting a semiconductor device according to claim 1, wherein a reinforcing portion is formed on a peripheral edge of the through hole of the reinforcing plate.
JP7103843A 1995-04-27 1995-04-27 Semiconductor device inspecting handler Pending JPH08297151A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7103843A JPH08297151A (en) 1995-04-27 1995-04-27 Semiconductor device inspecting handler

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7103843A JPH08297151A (en) 1995-04-27 1995-04-27 Semiconductor device inspecting handler

Publications (1)

Publication Number Publication Date
JPH08297151A true JPH08297151A (en) 1996-11-12

Family

ID=14364721

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7103843A Pending JPH08297151A (en) 1995-04-27 1995-04-27 Semiconductor device inspecting handler

Country Status (1)

Country Link
JP (1) JPH08297151A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7196530B2 (en) * 1998-12-22 2007-03-27 Fujitsu Limited Device testing contactor, method of producing the same, and device testing carrier
JP2008111766A (en) * 2006-10-31 2008-05-15 Fujitsu Ltd Electronic component testing equipment
JP2009150778A (en) * 2007-12-20 2009-07-09 Daitron Technology Co Ltd Contact device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7196530B2 (en) * 1998-12-22 2007-03-27 Fujitsu Limited Device testing contactor, method of producing the same, and device testing carrier
JP2008111766A (en) * 2006-10-31 2008-05-15 Fujitsu Ltd Electronic component testing equipment
JP2009150778A (en) * 2007-12-20 2009-07-09 Daitron Technology Co Ltd Contact device

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