JPH0835067A - Film forming apparatus and film forming method - Google Patents
Film forming apparatus and film forming methodInfo
- Publication number
- JPH0835067A JPH0835067A JP16843794A JP16843794A JPH0835067A JP H0835067 A JPH0835067 A JP H0835067A JP 16843794 A JP16843794 A JP 16843794A JP 16843794 A JP16843794 A JP 16843794A JP H0835067 A JPH0835067 A JP H0835067A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- shower
- gas
- chamber
- compartment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 26
- 239000000758 substrate Substances 0.000 claims abstract description 96
- 238000009826 distribution Methods 0.000 claims abstract description 27
- 230000002093 peripheral effect Effects 0.000 claims abstract description 19
- 238000005192 partition Methods 0.000 claims abstract description 12
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 11
- 238000000638 solvent extraction Methods 0.000 claims abstract description 4
- 238000007599 discharging Methods 0.000 claims abstract 2
- 239000007789 gas Substances 0.000 claims description 119
- 239000010408 film Substances 0.000 claims description 98
- 239000010409 thin film Substances 0.000 claims description 18
- 238000005229 chemical vapour deposition Methods 0.000 claims description 13
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 8
- 229910001882 dioxygen Inorganic materials 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 229910000077 silane Inorganic materials 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 2
- 239000013067 intermediate product Substances 0.000 abstract description 13
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000006185 dispersion Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
(57)【要約】
【目的】 成膜時の中間生成物の生成を少なくして、基
板面内での膜質などのばらつきを低減させ、面内ばらつ
きの少ない良好な膜を成膜する。
【構成】 ＣＶＤ成膜装置であって、シャワー室１７
と、シャワー室内１７を隔壁で仕切って設けられた隔室
１０と、シャワー室１７に第１のソースガスを供給する
シャワー室ガス供給管１３と、隔室１０に第２のソース
ガスを供給する隔室ガス供給管１２と、基板４に対向
し、シャワー室１７内のソースガスを基板４に向かって
噴き出す多数のシャワー室噴き出し孔２７および隔室１
０内のソースのガスを基板４に向かって噴き出す多数の
隔室噴き出し孔１１が形成された噴き出し面６ａとから
なるシャワー６を備えてなり、噴き出し面６ａ内におい
て、シャワー室噴き出し孔２７および隔室噴き出し孔１
１の少なくとも一方の分布密度が噴き出し面６ａの中央
部で高く、周辺部で低くなっている。
(57) [Summary] [Object] To reduce the generation of intermediate products during film formation, to reduce variations in film quality within the substrate surface, and to form good films with little in-plane variation. [Configuration] A CVD film forming apparatus, which is a shower room 17
And a compartment 10 provided by partitioning the shower chamber 17 with a partition wall, a shower chamber gas supply pipe 13 for supplying the first source gas to the shower chamber 17, and a second source gas for the compartment 10. A large number of shower chamber ejection holes 27, which face the partition gas supply pipe 12 and the substrate 4 and eject the source gas in the shower chamber 17 toward the substrate 4, and the partition chamber 1.
In addition, the shower room 6 is provided with a shower surface 6a having a large number of compartment discharge holes 11 for discharging the source gas in the chamber 0 toward the substrate 4, and the shower room discharge holes 27 and the separators 6 are provided in the shower surface 6a. Chamber spout hole 1
The distribution density of at least one of No. 1 is high in the central portion of the ejection surface 6a and is low in the peripheral portion.
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体装置などを製造す
る際に適用される成膜装置および成膜方法に係り、特に
膜質が均一な薄膜が効率よく得られ、半導体集積回路、
多層金属配線間絶縁膜、ゲート絶縁膜などの成膜に有効
な成膜装置および成膜方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming apparatus and a film forming method applied when manufacturing a semiconductor device or the like.
The present invention relates to a film forming apparatus and a film forming method which are effective for forming an insulating film between multi-layer metal wirings, a gate insulating film, and the like.
【０００２】[0002]
【従来の技術】一般に、ガラスなどの低融点基板上に薄
膜トランジスタなどを作製する際には、多層金属配線層
間絶縁膜、ゲート絶縁膜などが形成され、その場合、Ｓ
ｉＨ4もしくは有機シラン材料を用いたプラズマＣＶＤ
（Cemical Vapor Deposition）法あるいは常圧ＣＶＤ法
などを用いてＳｉＯ2が形成される。2. Description of the Related Art Generally, when a thin film transistor or the like is formed on a substrate having a low melting point such as glass, a multilayer metal wiring interlayer insulating film, a gate insulating film, etc. are formed.
Plasma CVD using iH 4 or organic silane material
SiO 2 is formed by using (Cemical Vapor Deposition) method or atmospheric pressure CVD method.
【０００３】図６は従来の、プラズマＣＶＤを用いて絶
縁膜等を成膜するための成膜装置の内部構造を示した概
略断面図である。反応炉壁１で囲まれた反応炉室２中に
おいて、サセプター３に基板４が支持されている。サセ
プター３は、その背面に設けられたヒーター５で加熱さ
れている。符号６はソースガスを基板４に供給するため
のシャワーを示す。シャワー６は、シャワー室１７と、
このシャワー室１７と反応炉室２の外部とに連通するガ
ス供給管８と、基板４に対向して多数の噴き出し孔７を
有する噴き出し面６ａとからなる。そしてガス供給管８
からシャワー室１７内へ供給されたガスが、噴き出し孔
７から基板４に向かって噴き出されるようになってい
る。またシャワー６は、反応炉室２の外部においてＲＦ
（高周波）電源に接続されている。さらにシャワー６の
噴き出し孔７は、図７に示すように、その大きさ、およ
びシャワーの噴き出し面６ａにおける面内分布密度が均
一に設けられており、これによって基板４に噴き付けら
れるガスの量が基板４の面内で均一になるように構成さ
れている。そして成膜を行なう際には、シャワー６から
基板４にソースガスを供給しつつ、シャワー６にＲＦを
印加して電極を兼ねたシャワー６と基板４との間で放電
を起こさせる。このことにより基板４上にはプラズマＣ
ＶＤによって成膜された薄膜ができる。FIG. 6 is a schematic sectional view showing the internal structure of a conventional film forming apparatus for forming an insulating film or the like by using plasma CVD. A substrate 4 is supported on a susceptor 3 in a reaction furnace chamber 2 surrounded by a reaction furnace wall 1. The susceptor 3 is heated by a heater 5 provided on the back surface thereof. Reference numeral 6 indicates a shower for supplying the source gas to the substrate 4. The shower 6 includes a shower room 17 and
The shower chamber 17 and the outside of the reaction furnace chamber 2 are connected to each other by a gas supply pipe 8 and a jetting surface 6a facing the substrate 4 and having a large number of jetting holes 7. And gas supply pipe 8
The gas supplied to the inside of the shower chamber 17 is ejected from the ejection hole 7 toward the substrate 4. Further, the shower 6 has an RF outside the reaction furnace chamber 2.
It is connected to a (high frequency) power supply. Further, as shown in FIG. 7, the blowout holes 7 of the shower 6 are provided with a uniform size and an in-plane distribution density on the blowout surface 6a of the shower, whereby the amount of gas blown onto the substrate 4 is increased. Are configured to be uniform within the surface of the substrate 4. When forming a film, the source gas is supplied from the shower 6 to the substrate 4 and RF is applied to the shower 6 to cause a discharge between the shower 6 also serving as an electrode and the substrate 4. This causes plasma C on the substrate 4.
A thin film formed by VD is formed.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、このよ
うな従来の装置を用いてＣＶＤを行なう際には、基板の
中央部では供給されたガスの反応が不十分となり中間成
生物が多く存在する。そのため、基板上、特に基板中央
には上記中間成生物が多く残留し、これが膜中に取り込
まれることになる。その結果、基板中央部で膜中欠陥が
多くなり膜質が悪くなるといった問題が生じていた。ま
た、このようにして作製された基板は基板面内の電気的
特性など、面内特性のばらつきがあり、これを用いて半
導体集積回路、特に液晶ディスプレイのような大面積の
製品を製造するのは困難であった。本発明は前記事情に
鑑みてなされたもので、成膜時の中間生成物の生成を低
減せしめ、基板面内における膜質が均一な膜が得られる
ようにした成膜装置および成膜方法の提供を目的とす
る。However, when performing CVD using such a conventional apparatus, the reaction of the supplied gas is insufficient at the central portion of the substrate and many intermediate products exist. Therefore, a large amount of the above intermediate product remains on the substrate, especially in the center of the substrate, and this intermediate product is taken into the film. As a result, there has been a problem that the number of defects in the film increases in the central part of the substrate and the film quality deteriorates. In addition, the substrate manufactured in this manner has variations in in-plane characteristics such as electrical characteristics in the plane of the substrate, which can be used to manufacture semiconductor integrated circuits, particularly large-area products such as liquid crystal displays. Was difficult. The present invention has been made in view of the above circumstances, and provides a film forming apparatus and a film forming method capable of reducing the generation of intermediate products during film formation and obtaining a film having a uniform film quality in the substrate surface. With the goal.
【０００５】[0005]
【課題を解決するための手段】前記課題を解決するため
に、本発明の請求項１〜５記載の成膜装置は、化学気相
析出法により基板上に薄膜を成膜する装置であって、シ
ャワー室と、該シャワー室にソースガスを供給するガス
供給管と、上記基板に対向し上記シャワー室内のガスを
該基板に向かって噴き出す多数の噴き出し孔が形成され
た噴き出し面とからなるシャワーを備えてなり、上記噴
き出し面内における上記噴き出し孔の分布密度あるいは
大きさが不均一であることを特徴とするものである。ま
た請求項６〜１０記載の成膜装置は、化学気相析出法に
より基板上に薄膜を成膜する装置であって、シャワー室
と、該シャワー室内を隔壁で仕切って設けられた隔室
と、上記シャワー室にソースガスを供給するシャワー室
ガス供給管と、上記隔室にこれとは別のソースガスを供
給する隔室ガス供給管と、上記基板に対向し、上記シャ
ワー室内のソースガスを該基板に向かって噴き出す多数
のシャワー室噴き出し孔および上記隔室内のソースガス
を該基板に向かって噴き出す多数の隔室噴き出し孔が形
成された噴き出し面とからなるシャワーを備えてなり、
上記噴き出し面内において、上記シャワー室噴き出し孔
および隔室噴き出し孔の少なくとも一方の分布密度ある
いは大きさが不均一であることを特徴とするものであ
る。また本発明の請求項１１記載の成膜方法は、請求項
１〜５のいずれかに記載の成膜装置を用い、基板に対し
てソースガスを供給し、化学気相析出法により該基板上
に薄膜を成膜する方法であって、上記基板の成膜面内に
おけるソースガスの供給量が不均一であることを特徴と
するものである。本発明の請求項１２および１３記載の
成膜方法は、請求項６〜１０のいずれかに記載の成膜装
置を用い、基板に対して第１のソースガスおよびこれと
は別の第２のソースガスをそれぞれ供給して該基板上で
これらを反応せしめ、化学気相析出法により該基板上に
薄膜を成膜方法であって、上記第１のソースガスおよび
第２のソースガスの少なくとも一方のガスの上記基板へ
の供給量が、該基板の成膜面内において不均一であるこ
とを特徴とするものである。In order to solve the above problems, the film forming apparatus according to claims 1 to 5 of the present invention is an apparatus for forming a thin film on a substrate by a chemical vapor deposition method. A shower including a shower chamber, a gas supply pipe for supplying a source gas to the shower chamber, and a jet surface facing the substrate and having a large number of jet holes for jetting the gas in the shower chamber toward the substrate. And the distribution density or size of the ejection holes in the ejection surface is non-uniform. Further, the film forming apparatus according to any one of claims 6 to 10 is an apparatus for forming a thin film on a substrate by a chemical vapor deposition method, and comprises a shower chamber and a compartment provided by partitioning the shower chamber with a partition wall. A shower chamber gas supply pipe for supplying a source gas to the shower chamber, a compartment gas supply pipe for supplying another source gas to the compartment, and a source gas in the shower chamber facing the substrate. A shower consisting of a large number of shower chamber ejection holes ejecting toward the substrate and a ejection surface having a large number of compartment ejection holes ejecting the source gas in the compartment toward the substrate,
The distribution density or size of at least one of the shower chamber ejection holes and the compartment ejection holes is non-uniform in the ejection surface. A film forming method according to claim 11 of the present invention uses the film forming apparatus according to any one of claims 1 to 5 to supply a source gas to a substrate and deposit the substrate on the substrate by a chemical vapor deposition method. A method of forming a thin film on a substrate, characterized in that the supply amount of the source gas within the film forming surface of the substrate is non-uniform. The film forming method according to claims 12 and 13 of the present invention uses the film forming apparatus according to any one of claims 6 to 10, and uses a first source gas for the substrate and a second source gas different from the first source gas. A method of forming a thin film on the substrate by chemical vapor deposition, by supplying source gases respectively to react these on the substrate, wherein at least one of the first source gas and the second source gas The amount of the above gas supplied to the substrate is non-uniform in the film formation surface of the substrate.
【０００６】[0006]
【作用】本発明によれば、成膜装置のシャワー噴き出し
面内における、噴き出し孔の分布密度を不均一にする、
あるいは噴き出し孔の大きさを不均一にして、基板に供
給されるガスの量を、その成膜面内において不均一に制
御することによって、成膜時の中間生成物の生成を制御
することができる。その結果、成膜状態、膜質などの制
御が可能となる。特に、成膜装置のシャワー噴き出し孔
の分布密度が噴き出し面の周辺部より中央部のほうが高
くなるようにする、あるいは噴き出し孔の大きさが噴き
出し面の周辺部より中央部のほうが大きくなるようにし
て、基板中央部へのガスの供給量が周辺部への供給量よ
りも多くなるようにすることによって、基板中央部での
反応を促進させて中間生成物の生成を低減させることが
できる。According to the present invention, the distribution density of the ejection holes in the shower ejection surface of the film forming apparatus is made nonuniform.
Alternatively, it is possible to control the generation of intermediate products during film formation by making the size of the ejection holes non-uniform and controlling the amount of gas supplied to the substrate non-uniformly within the film formation surface. it can. As a result, it becomes possible to control the film formation state, film quality and the like. In particular, the distribution density of shower spout holes of the film forming apparatus should be higher in the central part than in the peripheral part of the spouting surface, or the size of the spouting holes should be larger in the central part than in the peripheral part of the spouting surface. Then, by making the supply amount of the gas to the central portion of the substrate larger than the supply amount to the peripheral portion, it is possible to accelerate the reaction in the central portion of the substrate and reduce the production of the intermediate product.
【０００７】また２種類のガスを反応させて薄膜を成膜
する際に、シャワー室内に、隔壁で仕切られた隔室を設
け、それぞれにガスを供給する管を設けるとともに、シ
ャワーの噴き出し面には、シャワー室内のガスが噴き出
されるシャワー室噴き出し孔と隔室内のガスが噴き出さ
れる隔室噴き出し孔とをそれぞれ形成し、かつこれらシ
ャワー室噴き出し孔と隔室噴き出し孔の少なくとも一方
の分布密度あるいは大きさを不均一にして、２つのガス
がシャワー室内で分離した状態とされ、それぞれが基板
に供給されるようにすることによって、２つのガスの供
給条件をそれぞれ制御することが可能となり、成膜条件
を細かく制御することができる。その結果、高品質で膜
質のばらつきが少ない膜を成膜することができる。When a thin film is formed by reacting two kinds of gases, a compartment partitioned by a partition is provided in the shower chamber, a gas supply pipe is provided for each compartment, and a shower jet surface is provided. Is a shower chamber ejection hole through which gas in the shower chamber is ejected and a compartment ejection hole through which gas in the compartment is ejected, and the distribution density of at least one of the shower chamber ejection hole and the compartment ejection hole is Alternatively, by making the sizes non-uniform so that the two gases are separated in the shower chamber and supplied to the substrate, respectively, it becomes possible to control the supply conditions of the two gases, respectively. The film forming conditions can be finely controlled. As a result, it is possible to form a film with high quality and little variation in film quality.
【０００８】[0008]
【実施例】以下、本発明を詳しく説明する。図１は本発
明の成膜装置の第１の例におけるシャワー噴き出し面を
示したものである。この第１の例の成膜装置は、従来の
成膜装置においてシャワー６の噴き出し孔７の分布密度
が不均一になるようにしたものである。この例のシャワ
ー６はその噴き出し面６ａ内において、噴き出し孔７の
面内分布密度が周辺部よりも中央部のほうが高くなるよ
うに形成されたものである。このように噴き出し孔７の
分布密度を不均一にすることによって、成膜を行なう際
には、基板４に対して供給されるソースガスの量が基板
４の周辺部よりも中央付近で多くなる。その結果、基板
４の中央部分での反応が周辺部に比べて促進されことに
より、中間成生物の生成が低減されて均一な膜質の薄膜
を得ることができる。また噴き出し孔７の分布状態はこ
の例に限らず、所望の成膜条件によって適宜変えること
ができる。The present invention will be described in detail below. FIG. 1 shows a shower jet surface in a first example of the film forming apparatus of the present invention. The film forming apparatus of the first example is a conventional film forming apparatus in which the distribution density of the ejection holes 7 of the shower 6 is nonuniform. In the shower 6 of this example, the in-plane distribution density of the ejection holes 7 in the ejection surface 6a is higher in the central portion than in the peripheral portion. By making the distribution density of the ejection holes 7 non-uniform in this way, when forming a film, the amount of the source gas supplied to the substrate 4 becomes larger near the center than in the peripheral portion of the substrate 4. . As a result, the reaction in the central portion of the substrate 4 is promoted as compared with the peripheral portion, so that the production of intermediate products is reduced and a thin film having a uniform film quality can be obtained. Further, the distribution state of the ejection holes 7 is not limited to this example, and can be appropriately changed depending on desired film forming conditions.
【０００９】図２は本発明の成膜装置の第２の例におけ
るシャワー噴き出し面を示したものである。この第２の
例の成膜装置は、従来の成膜装置においてシャワー６の
噴き出し孔７の大きさが不均一になるようにしたもので
ある。この例のシャワー６はその噴き出し面６ａ内にお
いて、噴き出し孔７の大きさが周辺部よりも中央部のほ
うが大きくなるように形成されたものである。このよう
に噴き出し孔７の大きさを不均一にすることによって、
成膜を行なう際には、基板４に対して供給されるソース
ガスの量が基板４の周辺部よりも中央付近で多くなる。
その結果、基板４の中央部分での反応が周辺部に比べて
促進されることにより、中間成生物の生成が低減されて
均一な膜質の薄膜を得ることができる。また噴き出し孔
７の大きさはこの例に限らず、所望の成膜条件によって
適宜変えることができる。FIG. 2 shows a shower jet surface in a second example of the film forming apparatus of the present invention. The film forming apparatus of the second example is a conventional film forming apparatus in which the sizes of the ejection holes 7 of the shower 6 are made nonuniform. In the shower 6 of this example, the size of the ejection hole 7 in the ejection surface 6a is larger in the central portion than in the peripheral portion. By making the sizes of the ejection holes 7 non-uniform in this way,
When forming a film, the amount of the source gas supplied to the substrate 4 becomes larger near the center of the substrate 4 than in the peripheral portion.
As a result, the reaction in the central portion of the substrate 4 is promoted as compared with the peripheral portion, so that the production of intermediate products is reduced and a thin film having a uniform film quality can be obtained. Further, the size of the ejection hole 7 is not limited to this example, and can be appropriately changed according to desired film forming conditions.
【００１０】図３は本発明の成膜装置の第３の例を示し
たもので、（ａ）は装置の概略断面図、（ｂ）はシャワ
ー機構の要部断面図である。図３の構成要素において、
図６と同一の構成要素については同一符号を付してその
説明を省略する。この第３の例の装置は、シャワー室１
７内に隔壁で仕切られた隔室１０が設けられており、こ
れらシャワー室１７および隔室１０には、それぞれシャ
ワー室ガス供給管１３および隔室ガス供給管１２からソ
ースガスが供給されるようになっている。そして、シャ
ワー噴き出し面６ａにおいては、シャワー室１７に連通
するシャワー室噴き出し孔２７および隔室１０に連通す
る隔室噴き出し孔１１が設けられている。また、シャワ
ー室ガス供給管１３および隔室ガス供給管１２は反応炉
壁１に設けられた貫通孔１ａ，１ａに挿通されて設けら
れ、この貫通孔１ａとシャワー室ガス供給管１３外壁お
よび隔室ガス供給管１２外壁との隙間は真空絶縁シール
１６によってそれぞれ気密状態に封止されている。ここ
で隔室１０は管状に形成することもできる。また隔室１
０内と隔室ガス噴き出し口１１とが管路１４で連絡して
いる構成とすることができる。3A and 3B show a third example of the film forming apparatus of the present invention. FIG. 3A is a schematic sectional view of the apparatus, and FIG. 3B is a sectional view of an essential part of the shower mechanism. In the components of FIG.
The same components as those in FIG. 6 are designated by the same reference numerals and the description thereof will be omitted. The device of the third example is a shower room 1
7 is provided with a compartment 10 partitioned by a partition so that the shower chamber 17 and the compartment 10 are supplied with source gas from a shower chamber gas supply pipe 13 and a compartment gas supply pipe 12, respectively. It has become. The shower spouting surface 6 a is provided with a shower room spouting hole 27 communicating with the shower room 17 and a compartment spouting hole 11 communicating with the compartment 10. Further, the shower room gas supply pipe 13 and the compartment gas supply pipe 12 are provided by being inserted through the through holes 1a, 1a provided in the reactor wall 1, and the through hole 1a and the outer wall of the shower room gas supply pipe 13 and the partition The gap between the chamber gas supply pipe 12 and the outer wall is sealed by a vacuum insulating seal 16 in an airtight state. Here, the compartment 10 can also be formed in a tubular shape. Also the compartment 1
The inside of the chamber 0 and the compartment gas ejection port 11 may be connected by a pipe line 14.
【００１１】図４は上記第３の例のシャワー噴き出し面
６ａを示したものである。この例において、シャワー室
ガス噴き出し孔２７は噴き出し面６ａ全体にわたって均
一な分布密度で設けられており、一方隔室噴き出し孔１
１は噴き出し面６ａの中央部分での分布密度が周辺部分
よりも高くなるように設けられている。また、これら隔
室噴き出し孔１１の分布とシャワー室噴き出し孔２７の
分布とが反対になるように構成することも可能である。
またこれら噴き出し孔の分布状態はこの例に限らず、所
望の成膜条件によって適宜変えることができる。FIG. 4 shows the shower jet surface 6a of the third example. In this example, the shower chamber gas ejection holes 27 are provided with a uniform distribution density over the ejection surface 6a, while the compartment ejection holes 1 are provided.
No. 1 is provided so that the distribution density in the central portion of the ejection surface 6a is higher than that in the peripheral portion. It is also possible to configure such that the distribution of the spouting holes 11 in the compartment and the distribution of the spouting holes 27 in the shower chamber are opposite to each other.
Further, the distribution state of these ejection holes is not limited to this example, and can be appropriately changed according to desired film forming conditions.
【００１２】このような装置を用いて成膜を行なう際に
は、シャワー室１７と隔室１０には、成膜のための２つ
のソースガスがそれぞれ供給され、それらが混合される
ことなく基板４へ噴き出される。すなわち、第１のソー
スガスはシャワー室ガス供給管１３からシャワー室１７
へ供給され、シャワー室噴き出し孔２７から噴き出され
る。一方第２のソースガスは隔室ガス供給管１２から隔
室１０へ供給され、隔室噴き出し孔１１から噴き出され
る。例えば、ＴＥＯＳ（正ケイ酸エチル）ガスと酸素ガ
スを用いてＳｉＯ2膜を成膜する場合、基板中央部にお
ける酸素ガスの流量がＴＥＯＳガスの流量よりも多くな
るように、ガスを供給することによって、基板中央部で
の中間生成物の生成を低減することができる。このこと
は、図３および図４に示した装置においては、シャワー
室１７にＴＥＯＳガスを供給し、隔室１０に酸素ガスを
供給することによって達成できる。特に２つのソースガ
スのうちの一方のガスに有機シランガス等を用いる場合
は、反応する有機シランガスの基板上へのガス供給量を
変化させずに、中央部での反応をより促進するためにも
う一方のガスの基板上への供給量を変化させて膜質の面
内不均一を小さくすることができる。When a film is formed using such an apparatus, the shower chamber 17 and the compartment 10 are supplied with two source gases for film formation, respectively, and they are not mixed with each other to form the substrate. It is spouted to 4. That is, the first source gas is supplied from the shower room gas supply pipe 13 to the shower room 17
And is ejected from the shower room ejection hole 27. On the other hand, the second source gas is supplied from the compartment gas supply pipe 12 to the compartment 10, and is ejected from the compartment ejection hole 11. For example, when forming a SiO 2 film using TEOS (ethyl orthosilicate) gas and oxygen gas, supply the gas so that the flow rate of the oxygen gas in the central portion of the substrate is higher than the flow rate of the TEOS gas. This makes it possible to reduce the production of intermediate products in the central portion of the substrate. This can be achieved by supplying TEOS gas to the shower chamber 17 and oxygen gas to the compartment 10 in the apparatus shown in FIGS. 3 and 4. In particular, when an organic silane gas or the like is used as one of the two source gases, in order to further promote the reaction in the central portion without changing the gas supply amount of the reacting organic silane gas onto the substrate, The in-plane nonuniformity of the film quality can be reduced by changing the supply amount of one gas onto the substrate.
【００１３】図５は本発明の装置の第４の例を示したも
のである。この例の装置は上記第３の例の装置におい
て、シャワー噴き出し面６ａにおける隔室噴き出し孔１
１の分布密度を均一にし、その大きさを不均一に形成し
たものである。この例のシャワー６は、シャワー室噴き
出し孔２７は均一な大きさで形成され、一方、隔室噴き
出し孔１１の大きさが噴き出し面の周辺部よりも中央部
のほうが大きくなるように形成されている。またこれら
隔室噴き出し孔１１の大きさとシャワー室噴き出し孔２
７の大きさとが反対になるように構成することも可能で
ある。またこれら噴き出し孔の大きさはこの例に限ら
ず、所望の成膜条件によって適宜変えることができる。FIG. 5 shows a fourth example of the device of the present invention. The apparatus of this example is the same as the apparatus of the third example, but the spouting hole 1 for the compartment in the shower spout surface 6a
The distribution density of No. 1 is made uniform and the size thereof is made non-uniform. In the shower 6 of this example, the shower chamber spouting holes 27 are formed to have a uniform size, while the partition chamber spouting holes 11 are formed so that the size thereof is larger in the central portion than in the peripheral portion of the spouting surface. There is. Further, the size of these spouting holes 11 in the compartment and the spouting holes 2 in the shower room
It is also possible to configure so that the size of 7 is opposite. Further, the sizes of these ejection holes are not limited to this example, and can be appropriately changed according to desired film forming conditions.
【００１４】例えば、ＴＥＯＳガスと酸素ガスを用いて
ＳｉＯ2膜を成膜する場合、基板中央部における酸素ガ
スの流量がＴＥＯＳガスの流量よりも多くなるように、
ガスを供給することによって、基板中央部での中間生成
物の生成を低減することができる。このことは、図３お
よび図５に示した装置においては、シャワー室１７にＴ
ＥＯＳガスを供給し、隔室１０に酸素ガスを供給ことに
よって達成できる。さらに、特に２つのソースガスのう
ちの一方のガスに有機シランガス等を用いる場合は、反
応する有機シランガスの基板上へのガス供給量を変化さ
せずに、中央部での反応をより促進するためにもう一方
のガスの基板上への供給量を変化させて膜質の面内不均
一を小さくすることができる。For example, when forming a SiO 2 film using TEOS gas and oxygen gas, the flow rate of oxygen gas in the central portion of the substrate should be higher than that of TEOS gas.
By supplying the gas, it is possible to reduce the production of the intermediate product in the central portion of the substrate. This means that in the device shown in FIGS.
This can be achieved by supplying EOS gas and supplying oxygen gas to the compartment 10. Further, particularly when an organic silane gas or the like is used as one of the two source gases, in order to further promote the reaction in the central portion without changing the gas supply amount of the reacting organic silane gas onto the substrate. In addition, it is possible to reduce the in-plane nonuniformity of the film quality by changing the supply amount of the other gas onto the substrate.
【００１５】（実施例１）上記第３の例の装置を用いて
成膜を行った。５”角基板をサセプター３にセットし、
シャワー室ガス供給管１３からＴＥＯＳガスを供給し、
隔室ガス供給管１２からＯ2ガスを供給した。１３．５
６ＭＨｚ、３００Ｗ以下のＲＦを印加し、プラズマＣＶ
Ｄにより基板上にＳｉＯ2膜を成膜した。得られたＳｉ
Ｏ2膜についてその基板内の２５点での屈折率の分布を
測定したところ、１．４６±０．０１であった。また成
膜したＳｉＯ2を用いてＭＯＳキャパシタを作製し、こ
のキャパシタ５０個の絶縁耐圧の度数分布を調べた。そ
の結果を図８に示す。得られたキャパシタの絶縁耐圧の
平均値は７．９５（ＭＶ／ｃｍ）、分散値は１．７６
（ＭＶ／ｃｍ）であった。(Example 1) A film was formed using the apparatus of the third example. Set the 5 "square substrate on the susceptor 3,
TEOS gas is supplied from the shower room gas supply pipe 13,
O 2 gas was supplied from the compartment gas supply pipe 12. 13.5
Applying RF of 6MHz, 300W or less, plasma CV
A SiO 2 film was formed on the substrate by D. Obtained Si
When the distribution of the refractive index of the O 2 film at 25 points in the substrate was measured, it was 1.46 ± 0.01. Further, a MOS capacitor was manufactured using the deposited SiO 2, and the frequency distribution of the withstand voltage of the 50 capacitors was examined. FIG. 8 shows the result. The average withstand voltage of the obtained capacitors is 7.95 (MV / cm), and the dispersion value is 1.76.
(MV / cm).
【００１６】（比較例１）図６に示した従来の装置を用
いて成膜を行った。ＴＥＯＳガスおよびＯ2ガスを混合
した状態でガス供給管８からシャワー室１７に供給した
他は、上記実施例１と同様にしてＳｉＯ2膜を成膜し
た。得られたＳｉＯ2膜についてその基板内の２５点で
の屈折率の分布を測定したところ、１．４５±０．０４
であった。また成膜したＳｉＯ2を用いてＭＯＳキャパ
シタを作製し、このキャパシタ５０個の絶縁耐圧の度数
分布を調べた。その結果を図９に示す。得られたキャパ
シタの絶縁耐圧の平均値は６．９９（ＭＶ／ｃｍ）、分
散値は１．９３（ＭＶ／ｃｍ）であった。これら実施例
１および比較例１の結果より、本発明によれば、従来の
ものに比べて、屈折率の面内均一性が大幅に改善された
ＳｉＯ2膜が得られ、そのＳｉＯ2膜を用いたＭＯＳキャ
パシタは、絶縁耐圧の平均値が向上され、分散値も大幅
に改善されることが認められた。(Comparative Example 1) A film was formed using the conventional apparatus shown in FIG. A SiO 2 film was formed in the same manner as in Example 1 except that the TEOS gas and the O 2 gas were mixed and supplied from the gas supply pipe 8 to the shower chamber 17. With respect to the obtained SiO 2 film, the distribution of the refractive index at 25 points in the substrate was measured and found to be 1.45 ± 0.04.
Met. Further, a MOS capacitor was manufactured using the deposited SiO 2, and the frequency distribution of the withstand voltage of the 50 capacitors was examined. The result is shown in FIG. The average value of the withstand voltage of the obtained capacitor was 6.99 (MV / cm), and the dispersion value was 1.93 (MV / cm). The results of these Example 1 and Comparative Example 1, according to the present invention, as compared with the conventional, SiO 2 film is obtained in-plane uniformity of the refractive index is greatly improved, the SiO 2 film It was confirmed that the MOS capacitor used had an improved average withstand voltage and a significantly improved dispersion value.
【００１７】上記実施例においてはプラズマＣＶＤ法を
用いた成膜方法について説明したが、本発明はこれに限
らず、他のＣＶＤ法にも適用が可能である。また、上記
の実施例においてソースガスの例としてＴＥＯＳガスお
よびＯ2を例に挙げて説明したが、本発明はこれらに限
られるものではなく、２種類の異なるガスを反応させて
成膜を行なうものであれば、広く適用可能である。Although the film forming method using the plasma CVD method has been described in the above embodiments, the present invention is not limited to this and can be applied to other CVD methods. Further, although TEOS gas and O 2 are taken as an example of the source gas in the above-mentioned embodiments, the present invention is not limited to these, and two different kinds of gases are reacted to form a film. Anything can be widely applied.
【００１８】[0018]
【発明の効果】以上説明したように本発明によれば、成
膜装置のシャワー噴き出し面内における、噴き出し孔の
分布密度を不均一にする、あるいは噴き出し孔の大きさ
を不均一にして、基板に供給されるガスの量を、その成
膜面内において不均一に制御することによって、成膜時
の中間生成物の生成を制御することができる。その結
果、成膜を効率的に行なうことができる。特に、成膜装
置のシャワー噴き出し孔の分布密度が噴き出し面の周辺
部より中央部のほうが高くなるようにする、あるいは噴
き出し孔の大きさが噴き出し面の周辺部より中央部のほ
うが大きくなるようにして、基板中央部へのガスの供給
量が周辺部への供給量よりも多くなるようにすることに
よって、基板中央部での反応を促進させて中間生成物の
生成を低減させることができる。その結果、膜質が均一
で高品質の膜を得ることができ、良好な半導体集積回
路、特に液晶ディスプレイのような大面積のものの作製
も可能となる。As described above, according to the present invention, the distribution density of the ejection holes in the shower ejection surface of the film forming apparatus is made non-uniform, or the sizes of the ejection holes are made non-uniform, and the substrate is It is possible to control the generation of the intermediate product during the film formation by controlling the amount of the gas supplied to the film to be nonuniform within the film formation surface. As a result, film formation can be performed efficiently. In particular, the distribution density of shower spout holes of the film forming apparatus should be higher in the central part than in the peripheral part of the spouting surface, or the size of the spouting holes should be larger in the central part than in the peripheral part of the spouting surface. Then, by making the supply amount of the gas to the central portion of the substrate larger than the supply amount to the peripheral portion, it is possible to accelerate the reaction in the central portion of the substrate and reduce the production of the intermediate product. As a result, a high-quality film having a uniform film quality can be obtained, and a good semiconductor integrated circuit, particularly a large-area one such as a liquid crystal display, can be manufactured.
【００１９】また２種類のガスを反応させて薄膜を成膜
する際に、シャワー室内に、隔壁で仕切られた隔室を設
け、それぞれにガスを供給する管を設けるとともに、シ
ャワーの噴き出し面には、シャワー室内のガスが噴き出
されるシャワー室噴き出し孔と隔室内のガスが噴き出さ
れる隔室噴き出し孔とをそれぞれ形成し、かつこれらシ
ャワー室噴き出し孔と隔室噴き出し孔の少なくとも一方
の分布密度あるいは大きさを不均一にして、２つのガス
がシャワー室内で分離した状態とされ、それぞれが基板
に供給されるようにすることによって、２つのガスの供
給条件をそれぞれ制御することが可能となり、成膜条件
を精密に制御することができる。その結果、高品質で膜
質のばらつきが少ない膜を成膜することができる。When a thin film is formed by reacting two kinds of gases, a compartment partitioned by a partition is provided in the shower chamber, a gas supply pipe is provided to each compartment, and a shower surface is provided on the shower surface. Is a shower chamber ejection hole through which gas in the shower chamber is ejected and a compartment ejection hole through which gas in the compartment is ejected, and the distribution density of at least one of the shower chamber ejection hole and the compartment ejection hole is Alternatively, by making the sizes non-uniform so that the two gases are separated in the shower chamber and supplied to the substrate, respectively, it becomes possible to control the supply conditions of the two gases, respectively. The film forming conditions can be precisely controlled. As a result, it is possible to form a film with high quality and little variation in film quality.
【図１】 本発明の成膜装置の第１の例におけるシャワ
ー噴き出し面の平面図である。FIG. 1 is a plan view of a shower spouting surface in a first example of a film forming apparatus of the present invention.
【図２】 本発明の成膜装置の第２の例におけるシャワ
ー噴き出し面の平面図である。FIG. 2 is a plan view of a shower spouting surface in a second example of the film forming apparatus of the present invention.
【図３】 本発明の成膜装置の第３の例を示したもの
で、（ａ）は装置の概略断面図、（ｂ）はシャワー機構
の要部断面図である。3A and 3B show a third example of the film forming apparatus of the present invention, in which FIG. 3A is a schematic sectional view of the apparatus, and FIG.
【図４】 本発明の成膜装置の第３の例におけるシャワ
ー噴き出し面の平面図である。FIG. 4 is a plan view of a shower spouting surface in a third example of the film forming apparatus of the present invention.
【図５】 本発明の成膜装置の第４の例におけるシャワ
ー噴き出し面の平面図である。FIG. 5 is a plan view of a shower spouting surface in a fourth example of the film forming apparatus of the present invention.
【図６】 従来の成膜装置を示した概略断面図である。FIG. 6 is a schematic sectional view showing a conventional film forming apparatus.
【図７】 従来の成膜装置におけるシャワー噴き出し面
の平面図である。FIG. 7 is a plan view of a shower spouting surface in a conventional film forming apparatus.
【図８】 本発明によるＭＯＳキャパシタの絶縁耐圧を
示すグラフである。FIG. 8 is a graph showing the withstand voltage of a MOS capacitor according to the present invention.
【図９】 従来例によるＭＯＳキャパシタの絶縁耐圧を
示すグラフである。FIG. 9 is a graph showing the withstand voltage of a conventional MOS capacitor.
４ 基板 ６ シャワー ６ａ 噴き出し面 ７ 噴き出し孔 ８ ガス供給管 １０ 隔室 １１ 隔室噴き出し孔 １２ 隔室ガス供給管 １３ シャワー室ガス供給管 １７ シャワー室 ２７ シャワー室噴き出し孔 4 Substrate 6 Shower 6a Ejection Surface 7 Ejection Hole 8 Gas Supply Pipe 10 Separator 11 Separator Ejection Hole 12 Separator Gas Supply Pipe 13 Shower Room Gas Supply Pipe 17 Shower Room 27 Shower Room Ejection Hole
Claims (13)
膜する装置であって、シャワー室と、該シャワー室にソ
ースガスを供給するガス供給管と、上記基板に対向し上
記シャワー室内のガスを該基板に向かって噴き出す多数
の噴き出し孔が形成された噴き出し面とからなるシャワ
ーを備えてなり、上記噴き出し面内における上記噴き出
し孔の分布密度が不均一であることを特徴とする成膜装
置。1. An apparatus for forming a thin film on a substrate by a chemical vapor deposition method, comprising: a shower chamber, a gas supply pipe for supplying a source gas to the shower chamber, and the shower chamber facing the substrate. A shower consisting of a large number of ejection holes for ejecting the gas toward the substrate is formed, and the distribution density of the ejection holes in the ejection surface is non-uniform. Membrane device.
出し面の周辺部よりも中央部のほうが高くなっているこ
とを特徴とする請求項１記載の成膜装置。2. The film forming apparatus according to claim 1, wherein the distribution density of the ejection holes is higher in the central portion than in the peripheral portion of the ejection surface.
膜する装置であって、シャワー室と、該シャワー室にソ
ースガスを供給するガス供給管と、上記基板に対向し上
記シャワー室内のガスを該基板に向かって噴き出す多数
の噴き出し孔が形成された噴き出し面とからなるシャワ
ーを備えてなり、上記噴き出し孔の大きさが不均一であ
ることを特徴とする成膜装置。3. An apparatus for forming a thin film on a substrate by a chemical vapor deposition method, comprising a shower chamber, a gas supply pipe for supplying a source gas to the shower chamber, and the shower chamber facing the substrate. A film forming apparatus, characterized in that it comprises a shower including a jetting surface having a large number of jetting holes for jetting the gas toward the substrate, and the jetting holes are non-uniform in size.
し面の周辺部よりも中央部のほうが大きくなっているこ
とを特徴とする請求項３記載の成膜装置。4. The film forming apparatus according to claim 3, wherein the size of the ejection hole is larger in the central portion than in the peripheral portion of the ejection surface.
該シャワーと上記基板間の放電によって、該基板上にプ
ラズマ化学気相析出法による薄膜が形成されることを特
徴とする請求項１〜４のいずれかに記載の成膜装置。5. The shower is connected to a high frequency power supply,
The film forming apparatus according to any one of claims 1 to 4, wherein a thin film is formed on the substrate by plasma chemical vapor deposition by the discharge between the shower and the substrate.
膜する装置であって、シャワー室と、該シャワー室内を
隔壁で仕切って設けられた隔室と、上記シャワー室にソ
ースガスを供給するシャワー室ガス供給管と、上記隔室
にこれとは別のソースガスを供給する隔室ガス供給管
と、上記基板に対向し、上記シャワー室内のソースガス
を該基板に向かって噴き出す多数のシャワー室噴き出し
孔および上記隔室内のソースのガスを該基板に向かって
噴き出す多数の隔室噴き出し孔が形成された噴き出し面
とからなるシャワーを備えてなり、上記噴き出し面内に
おいて、上記シャワー室噴き出し孔および隔室噴き出し
孔の少なくとも一方の分布密度が不均一であることを特
徴とする成膜装置。6. An apparatus for depositing a thin film on a substrate by a chemical vapor deposition method, comprising: a shower chamber; a compartment provided by partitioning the shower chamber with a partition; and a source gas in the shower chamber. A shower chamber gas supply pipe for supplying, a compartment gas supply pipe for supplying another source gas to the compartment, which is different from the source gas, and a large number of source gases in the shower chamber ejected toward the substrate facing the substrate. Of the shower chamber and a shower surface formed with a large number of the chamber discharge holes for discharging the source gas in the chamber toward the substrate, the shower chamber being provided in the discharge surface. A film forming apparatus, wherein the distribution density of at least one of the ejection holes and the compartment ejection holes is non-uniform.
き出し孔の少なくとも一方の分布密度が、上記噴き出し
面の周辺部よりも中央部のほうが高くなっていることを
特徴とする請求項６記載の成膜装置。7. The composition according to claim 6, wherein the distribution density of at least one of the shower chamber spouting holes and the compartment spouting holes is higher in the central portion than in the peripheral portion of the spouting surface. Membrane device.
膜する装置であって、シャワー室と、該シャワー室内を
隔壁で仕切って設けられた隔室と、上記シャワー室にソ
ースガスを供給するシャワー室ガス供給管と、上記隔室
にこれとは別のソースガスを供給する隔室ガス供給管
と、上記基板に対向し、上記シャワー室内のソースガス
を該基板に向かって噴き出す多数のシャワー室噴き出し
孔および上記隔室内のソースガスを該基板に向かって噴
き出す多数の隔室噴き出し孔が形成された噴き出し面と
からなるシャワーを備えてなり、上記シャワー室噴き出
し孔および隔室噴き出し孔の少なくとも一方の大きさが
不均一であることを特徴とする成膜装置。8. An apparatus for depositing a thin film on a substrate by a chemical vapor deposition method, comprising: a shower chamber; a compartment provided by partitioning the shower chamber with a partition; and a source gas in the shower chamber. A shower chamber gas supply pipe for supplying, a compartment gas supply pipe for supplying another source gas to the compartment, which is different from the source gas, and a large number of source gases in the shower chamber ejected toward the substrate facing the substrate. Of the shower chamber and a shower surface having a large number of partition chamber ejection holes for ejecting the source gas in the compartment toward the substrate, the shower chamber ejection hole and the compartment ejection port The film forming apparatus is characterized in that at least one of the two is non-uniform in size.
き出し孔の少なくとも一方の大きさが、上記噴き出し面
の周辺部よりも中央部のほうが大きくなっていることを
特徴とする請求項８記載の成膜装置。9. The method according to claim 8, wherein at least one of the shower room ejection hole and the compartment ejection hole is larger in the central portion than in the peripheral portion of the ejection surface. Membrane device.
れ、該シャワーと上記基板間の放電によって、該基板上
にプラズマ化学気相析出法による薄膜が形成されること
を特徴とする請求項６〜９のいずれかに記載の成膜装
置。10. The shower is connected to a high frequency power source, and a thin film formed by a plasma chemical vapor deposition method is formed on the substrate by discharge between the shower and the substrate. The film forming apparatus according to any one of 1.
学気相析出法により該基板上に薄膜を成膜する方法であ
って、上記基板の成膜面内におけるソースガスの供給量
が不均一であることを特徴とする請求項１〜５のいずれ
かに記載の成膜装置を用いた成膜方法。11. A method of supplying a source gas to a substrate and forming a thin film on the substrate by a chemical vapor deposition method, wherein the supply amount of the source gas within the film-forming surface of the substrate is constant. It is uniform, The film-forming method using the film-forming apparatus in any one of Claims 1-5.
これとは別の第２のソースガスをそれぞれ供給して該基
板上でこれらを反応せしめ、化学気相析出法により該基
板上に薄膜を成膜する方法であって、上記第１のソース
ガスおよび第２のソースガスの少なくとも一方のガスの
上記基板への供給量が、該基板の成膜面内において不均
一であることを特徴とする請求項６〜１０のいずれかに
記載の成膜装置を用いた成膜方法。12. A first source gas and a second source gas other than the first source gas are supplied to the substrate to react them on the substrate, and a thin film is formed on the substrate by a chemical vapor deposition method. And a supply amount of at least one of the first source gas and the second source gas to the substrate is non-uniform in a film formation surface of the substrate. A film forming method using the film forming apparatus according to claim 6.
を用い、上記第２のガスとして酸素ガスを用い、有機シ
ランガスの上記基板への供給量が該基板の成膜面内にお
いて均一であり、かつ酸素ガスの上記基板への供給量が
該基板の成膜面内において不均一であることを特徴とす
る請求項１１記載の成膜方法。13. An organic silane gas is used as the first gas, an oxygen gas is used as the second gas, and the supply amount of the organic silane gas to the substrate is uniform in the film forming surface of the substrate, and The film forming method according to claim 11, wherein the amount of oxygen gas supplied to the substrate is non-uniform in the film forming surface of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6168437A JP2726005B2 (en) | 1994-07-20 | 1994-07-20 | Film forming apparatus and film forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6168437A JP2726005B2 (en) | 1994-07-20 | 1994-07-20 | Film forming apparatus and film forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0835067A true JPH0835067A (en) | 1996-02-06 |
| JP2726005B2 JP2726005B2 (en) | 1998-03-11 |
Family
ID=15868108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6168437A Expired - Fee Related JP2726005B2 (en) | 1994-07-20 | 1994-07-20 | Film forming apparatus and film forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2726005B2 (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999045166A1 (en) * | 1998-03-06 | 1999-09-10 | Tokyo Electron Limited | Vacuum processing apparatus |
| KR100466867B1 (en) * | 1997-07-03 | 2005-04-19 | 삼성전자주식회사 | Plasma-Enhanced Chemical Vapor Deposition Equipment with Constant Deposition Rate |
| JP2006161060A (en) * | 2004-12-02 | 2006-06-22 | Mitsubishi Heavy Ind Ltd | Device and method for manufacturing metal film |
| JP2007266093A (en) * | 2006-03-27 | 2007-10-11 | Mitsubishi Heavy Ind Ltd | Production device for optoelectric transducer, and manufacturing method for the optoelectric transducer |
| JP2009167520A (en) * | 2008-01-15 | 2009-07-30 | Samsung Electro-Mechanics Co Ltd | Shower head and chemical vapor deposition apparatus having the same |
| JP2009191365A (en) * | 2009-03-19 | 2009-08-27 | Canon Anelva Corp | Metal film production apparatus and metal film production method |
| JP2010062383A (en) * | 2008-09-04 | 2010-03-18 | Sharp Corp | Vapor deposition equipment and vapor deposition method |
| JP2010077537A (en) * | 2003-04-16 | 2010-04-08 | Applied Materials Inc | Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition |
| JP2014518452A (en) * | 2011-06-11 | 2014-07-28 | 東京エレクトロン株式会社 | Process gas diffuser assembly for vapor deposition systems. |
| JP2017028220A (en) * | 2015-07-28 | 2017-02-02 | 三菱マテリアル株式会社 | Electrode plate for plasma processing equipment |
| JP2025013250A (en) * | 2023-07-13 | 2025-01-24 | ベイジン イータウン セミコンダクター テクノロジー カンパニー リミテッド | Gas distribution element and heat treatment device including same |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100466867B1 (en) * | 1997-07-03 | 2005-04-19 | 삼성전자주식회사 | Plasma-Enhanced Chemical Vapor Deposition Equipment with Constant Deposition Rate |
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| JP2007266093A (en) * | 2006-03-27 | 2007-10-11 | Mitsubishi Heavy Ind Ltd | Production device for optoelectric transducer, and manufacturing method for the optoelectric transducer |
| JP2009167520A (en) * | 2008-01-15 | 2009-07-30 | Samsung Electro-Mechanics Co Ltd | Shower head and chemical vapor deposition apparatus having the same |
| JP2010062383A (en) * | 2008-09-04 | 2010-03-18 | Sharp Corp | Vapor deposition equipment and vapor deposition method |
| JP2009191365A (en) * | 2009-03-19 | 2009-08-27 | Canon Anelva Corp | Metal film production apparatus and metal film production method |
| JP2014518452A (en) * | 2011-06-11 | 2014-07-28 | 東京エレクトロン株式会社 | Process gas diffuser assembly for vapor deposition systems. |
| JP2017028220A (en) * | 2015-07-28 | 2017-02-02 | 三菱マテリアル株式会社 | Electrode plate for plasma processing equipment |
| JP2025013250A (en) * | 2023-07-13 | 2025-01-24 | ベイジン イータウン セミコンダクター テクノロジー カンパニー リミテッド | Gas distribution element and heat treatment device including same |
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