JPH0871489A - Thin film forming method and thin film forming apparatus - Google Patents

Abstract

(57) [Abstract] [PROBLEMS] A thin film forming method and a thin film forming apparatus, which can discharge a MOD solution, a sol-gel solution, a resin-containing solution, and a metal particle-containing solution onto a medium. The purpose is to form a thin film of those materials on top. A step of guiding a solution-like substance having a specific resistance of 10 ⁵ Ωcm or more and containing a thin film forming material and a solvent capable of dissolving the thin film forming material into an ejection nozzle, and a member to be formed in an axial direction of the nozzle. And a step of applying an electrostatic force to the solution-like substance in the nozzle in the axial direction of the nozzle to discharge the solution-like substance in the form of a string from the nozzle toward the formation target member. A thin film forming method having
And a thin film forming apparatus most suitable for carrying out this thin film forming method.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming method and a thin film forming apparatus. ), And can be used in a thin film forming process suitable for hybrid IC circuits, semiconductor circuits, or micromachine fabrication, for example.

[0002]

2. Description of the Related Art Conventionally, as a printing device, a droplet discharge device for discharging ink using minute nozzles has been actively developed. In recent years, however, a solution to be discharged has been developed as an application of the droplet discharge device. Other than the above, for example, a liquid droplet ejection device or a circuit forming method which uses a resist as a solution and is applied to the production of an IC circuit has been developed.

As a conventional technique, Japanese Patent Laid-Open No. 5-1040
The liquid substance application device of Japanese Patent No. 52 will be described as an example.

FIG. 9 shows a configuration disclosed in Japanese Patent Laid-Open No. 5-104052. In FIG. 9, 101 is a liquid material supply unit, 102 is an ejection head connected to the liquid substance supply unit 101, 103 is a member to be coated (hereinafter referred to as a substrate), and 104 is the ejection head 102 and the substrate 103 facing each other. XY stage is shown.

The discharge head 102 communicates with the liquid substance supply section 101 and is filled with the liquid substance 105.
06, a nozzle 107 that is provided in the middle of the pressure chamber 106 in the longitudinal direction and that opens to the lower end surface of the ejection head 102, a displacement amplification chamber 109 that is displaced by the piezoelectric element 108 and amplifies the displacement, and the pressure chamber 106. Displacement amplification chamber 109
And a diaphragm 110 provided at a boundary between the and.

The piezoelectric element 108 has a control section 111.
The displacement generated thereby is transmitted to the liquid substance 105 in the pressure chamber 106 through the displacement amplification chamber 109 and the diaphragm 110, pressurizing the liquid substance 105 in the pressure chamber 106, and the liquid substance from the nozzle 107. 105
Will be made into a droplet 105a and will be jetted downward.

By adopting such a configuration, the liquid material 105 in the nozzle 107 is formed into the liquid droplet 105a and the substrate 1
It is possible to apply the liquid substance 105 on the substrate 103 in an arbitrary pattern.

The XY stage 104 includes a control unit 11
The desired position is controlled by 1.

[0009]

By the way, in the above-mentioned conventional structure, since the piezoelectric effect is mainly used as the ejection method, there are the following problems to be overcome.

That is, in the discharge method by the pressure application method (hereinafter referred to as the piezoelectric method) using the piezoelectric effect, the solution to be discharged becomes a discharge droplet having a diameter two to three times the diameter of the nozzle. Therefore, the circuit pattern formed by the ejected liquid is limited in miniaturization and accuracy.

Next, in order to make the circuit pattern finer and more precise, the nozzle diameter must be reduced.
When the nozzle diameter is reduced, in the piezoelectric discharge method,
Since the adhesive loss at the nozzle portion is large, there is a limit to reducing the nozzle diameter, especially in a highly viscous solution.

In the piezoelectric discharge method, when an organic solvent having a large amount of dissolved air is used as the discharge solution, a cavitation phenomenon occurs and the stability of discharge is lost. You will be limited.

The present invention solves the above-mentioned problems of the prior art, and provides a thin film forming method and a thin film forming apparatus for forming a thin film by using a solution ejecting device without being restricted by the kind of the solution. The purpose is.

[0014]

In order to solve the above-mentioned problems, the present invention is for discharging a solution substance containing a thin film forming material and a solvent which dissolves the thin film forming material and having a specific resistance of 10 ⁵ Ωcm or more. Of the nozzle, the step of installing the member to be formed in the axial direction of the nozzle, the electrostatic force is applied to the solution-like substance in the nozzle in the axial direction of the nozzle, and And a step of discharging the solution-like substance in the form of a string toward the forming member.

At this time, the solution substance may further contain a solvent whose specific resistance can be adjusted. Alternatively, a step of guiding a solution substance containing a polymer resin into a nozzle for discharging, a step of installing a member to be formed in an axial direction of the nozzle, A thin film forming method may include a step of applying an electrostatic force in the axial direction to discharge the solution-like substance from the nozzle toward the member to be formed in a string shape.

Alternatively, a step of guiding a solution substance containing a metal material solution and a dispersant and having a specific resistance of 10 ⁵ Ωcm or more into a nozzle for discharging, and a step of installing a member to be formed in an axial direction of the nozzle. And a step of applying an electrostatic force to the solution-like substance in the nozzle in the axial direction of the nozzle to eject the solution-like substance from the nozzle toward the formation target member in a string shape. May be

At this time, the solution substance may further contain a protective glue or an emulsion stabilizer. Then, in the above configuration, the step of discharging the liquid substance in the form of a string is
It may also include the step of applying a pressure wave.

Further, the above structure may include a step of heating the solution-like substance discharged onto the formation target member.

Further, the method may include a step of supplying an inert gas around the solution-like substance discharged onto the formation target member.

Further, the present invention is a thin film forming apparatus having a structure suitable for carrying out the above thin film forming method.

[0021]

With the above-described structure of the present invention, the kind of solution that can be discharged is not substantially limited.

Further, since the discharged solution is surely brought into a towed state (a state in which the yarn is towed and discharged), a fine thin film is formed.

[0023]

Embodiments of the present invention will now be described in detail with reference to the drawings.

Example 1 As a first example of the present invention, a thin film forming method using a solution having a specific resistance of 10 ⁵ Ωcm or more will be described below.

FIG. 1 is an explanatory diagram showing a discharge state when a solution is discharged by using electrostatic force.

In FIG. 1, reference numerals 1, 4, 6 denote nozzles, 2 denotes a member to be coated, and 3 to 7 denote discharge states of a solution.

When the solution is discharged by using electrostatic force, the discharge state can be roughly classified into a form as shown in FIG.

That is, (a) a state in which droplets 3 which are independent of the nozzle 1 are ejected and adhered to the member 2 to be coated,
(B) A state in which the yarns shown in the nozzles 4 to 5 have a yarn-pulling phenomenon and are ejected and adhered to the member 2 to be coated, or (c) Nozzles 6 to 7 are ejected in the form of spray to be coated. There are three forms, that is, a state of being attached to the member 2.

In order to form a fine thin film, it is necessary to discharge the solution in the state where the stringing phenomenon of the above (b) occurs, but according to the inventor's experiment, the discharge state depends on the specific resistance of the solution. It turned out to be.

The contents of the experiment will be described below. FIG. 2 is a configuration diagram showing a basic configuration for discharging and applying a solution by electrostatic force.

In FIG. 2, 8 is a solution supply port, 9 is a solution discharge port, 10 is a solution, 11 is a member to be coated on which a thin film is formed by the attached solution, and 12 is installed on the back surface of the member to be coated 11. A back electrode, 13 is a nozzle, and 14 is a high-voltage power supply.

In this structure, the solution 10 is discharged from the nozzle 13 toward the member 11 to be coated by the electric field generated by applying a voltage between the back electrode 12 and the nozzle 13 by the high-voltage power supply 14.

FIG. 3 shows the discharge state of the solution when the solution is discharged by utilizing the electrostatic force in the structure shown in FIG. 2 by the relationship between the specific resistance and the applied voltage.

In FIG. 3, the horizontal axis represents the specific resistance of the solution and the vertical axis represents the strength of the electric field due to electrostatic force. The portion a is a state in which the solution is not ejected, and the portion b is an independent droplet. The state of discharging (the state of FIG. 1 (a)), the state of the portion c in the state of spraying (the state of FIG. 1 (c)), and the portion of the state of discharging the solution in the form of a string (FIG. 1 (b)). State).

As described above, in order to form a thin film having a fine pattern, it is necessary to eject the solution in a stringing state in which the ejection solution can be controlled.

Therefore, in order to obtain the state of part d in FIG.
First, assuming that the specific resistance of the solution is 10 ⁵ Ωcm or more, if the energy (strength of the electric field) applied to the solution is adjusted to a string-like size,
It can be seen that the discharge state is such that a good thin film can be formed.

For example, in recent years, MOD has been developed as a material for DRAM capacitors and non-volatile memories.
(Metallo-Organic Deposition) solutions, sol-gel solutions, etc. are generally added with a hydrocarbon-based organic solvent such as ethanol or methanol as a solvent, and the specific resistance of these solutions is generally 10 ⁷ Ωcm or more. is there.

When these solutions are ejected by the conventional ejection method using a piezoelectric element, cavitation occurs and good solution cannot be ejected. However, if the solution is ejected by the constitution of this embodiment, it is possible to obtain the results shown in FIG. As is clear,
^Since it has a high specific resistance of ⁵ Ωcm or more, it is possible to discharge the solution in a stable stringing state, and to use piezoelectric thin film or dielectric thin film on any place of the substrate without using the exposure process or etching process. Can be formed directly.

The same applies when the solution is discharged with the structure shown in FIG. 4 instead of the structure shown in FIG.

In this structure, the principle of discharging the solution by electrostatic force is similar to that of FIG. 2, but a metal film formed on the upper surface of the member 15 to be coated serves as one electrode for generating an electric field. The difference is that it uses 15a,
Either configuration can be selected depending on the application.

Next, a thin film forming apparatus to which the above thin film forming method is actually applied will be described in detail.

FIG. 5 shows the structure of the thin film forming apparatus of the present invention. In FIG. 5, 17 is a solution ejecting section for ejecting a solution, 18 is an applied member on which a thin film is formed by ejecting the solution, 19 is a heater block for heating the applied member, and 20 is a member on the applied object. An XY stage for moving a member to be coated in order to discharge a solution to an arbitrary place to form a thin film, 21 is a heat insulating plate arranged to prevent conduction of heat generated from the heater block 19, 22
Is a Z stage that enables vertical positioning of the solution discharge part 17, and 23 is a solution supply part that stores the solution to be discharged and supplies the solution to the solution discharge part 17.

Reference numeral 24 is a solution discharge amount control of the solution discharge part 17, a temperature control of the heater block 19, and an XY.
The control part which controls the moving distance of the stage 20 and the Z stage 22 is shown.

In such an apparatus configuration, after the solution discharge part 17 is positioned by the Z stage 22, the solution is discharged from the solution discharge part 17 toward the coated member 18 according to the above-described discharge principle. In this case, if necessary, the XY stage 20 is moved during or after the ejection.

Since the heater block 19 which is a heating mechanism for heating the coated member 18 is provided,
After the solution is discharged onto the coated member 18, the coated member 18
By heating, the solvent can be quickly evaporated to form a thin film, and the time required for forming the thin film can be shortened.

It is needless to say that the same effect can be obtained even if a heating method using a lamp is adopted as the heating method.

Of course, if drying at room temperature is sufficient in time, heating may be omitted.

Also, the thin film can be formed by the same method even if the substrate is not limited to a flat plate but a curved substrate or the like.

Further, in addition to the apparatus configuration shown in FIG. 5, by adding a function of filling the atmosphere of the place where the thin film is formed with an inert gas, it reacts with moisture in the atmosphere and has its own characteristics. Even if a solution that deteriorates the temperature is discharged, the characteristics can be maintained without being affected by the atmosphere.

As a means for filling the atmosphere of the place where the thin film is formed with an inert gas, for example, the place where the thin film is formed is surrounded by a container, and the inert gas is introduced into the place at a pressure higher than the atmosphere. Alternatively, a pressure difference may be provided between the atmosphere for forming the thin film and the atmosphere by using a vacuum pump or the like, and the atmosphere for forming the thin film may be filled with the inert gas.

Further, the head of the solution ejecting section 17 for ejecting the solution can be a multi-nozzle head having a plurality of nozzles, and thin films can be simultaneously formed with different solutions, or a plurality of circuit patterns having a constant interval can be formed. Can be created at the same time, and productivity can be improved.

(Second Embodiment) A second embodiment of the present invention will be described below.

In Example 1, the specific resistance was high (10 ⁵ Ωc
m or more) solution was described, but in the present embodiment, a case of discharging a solution having a low specific resistance (10 ⁵ Ωcm or less) will be described.

Some of the commercially available sol-gel solutions, such as SrTiO ₃ sol-gel solution containing acetic acid as a main solvent, have a low specific resistance of about 4 × 10 ³ Ωcm, and therefore are pulled by electrostatic force. Stable solution discharge could not be realized by the discharge according to the principle of Example 1 without causing the thread phenomenon.

It is considered that this is because the acetate salt becomes ions dissociated in the solvent to lower the specific resistance.

Then, for the purpose of increasing the specific resistance, a solution of isobutylbenzene, which is a hydrophobic organic solvent, was mixed as a second solvent at a ratio of 1: 1. Thus, the specific resistance was increased to 10 ⁷ Ωcm, and good solution ejection was possible.

As described above, by using the second solvent for the purpose of adjusting the specific resistance, in addition to the first solvent which dissolves the medium well, a solution which can be satisfactorily discharged by electrostatic force is prepared. can do.

Generally, the second solution is an organic solvent having a lower polarity than that of the first solution, and should be well soluble in the first solution. For example, an aliphatic hydrocarbon, a naphthene-based hydrocarbon, a mono or Organic solvents such as aromatic hydrocarbons such as dialkylnaphthalene and phenethylcumene are preferable.

Then, after the discharge, the thin film can be formed by the same process as in the first embodiment.

(Embodiment 3) A third embodiment of the present invention will be described below.

In this embodiment, the viscosity is relatively high (10 to 10).
Discharge of a solution, especially a resin solution, will be described.

Various methods can be used for forming a thin film of resin by discharging a solution of a resin onto a member to be coated and then drying it. For example, the thin film can be used as a mask material in the manufacture of electronic component circuits. Can be used.

Since these solutions generally have high viscosities and often 10 to 20 cp or more, when the conventional piezoelectric discharge method is used, it may be impossible or unstable to discharge. There were many.

However, it has been found that if a discharge method utilizing electrostatic force is used, a highly accurate pattern can be produced with a resin solution even with a viscosity of 20 to 30 cp.

Some resin solutions have a specific resistance of less than 10 ⁵ Ωcm.

Referring to FIG. 3, it seems that it is impossible to eject these resin solutions having a low specific resistance. However, according to the study by the present inventors on the resin solution, exceptionally,
It was found that even if the specific resistance is low, the stringing state can be produced.

For example, PVA (polyvinyl alcohol)
The specific resistance of the PVA aqueous solution added with 5% is 500 Ωcm
Although it was a degree, it was possible to confirm the discharge of the solution in the towed state by using the discharge method using electrostatic force.

The reason for this is that not only the specific resistance value but also the physical resistance value factor that causes the stringing phenomenon by electrostatic force
It is conceivable that the size of the solute itself may have an influence.

The cause of the tendency of the resin solution to easily cause the stringing phenomenon has not been clarified. However, like the case where the high molecular weight protein pulls the thread, the high molecular weight resin causes the stringing phenomenon. I think it is easy to cause a phenomenon.

Then, after the ejection, the thin film can be formed by the same steps as in the first embodiment.

As described above, when a resin is used as the discharge solution, a thin film can be formed which substantially expands the usable range of the specific resistance value. While a plurality of steps such as resin coating, exposure, etching and the like are required, by forming a thin film from a resin solution according to the ejection principle of the present invention,
The mask can be formed by only one process, which is effective in reducing the number of processes in manufacturing the circuit and reducing the cost of the circuit.

(Fourth Embodiment) The fourth embodiment of the present invention will be described below.

In this embodiment, a method for forming a metal thin film will be described. If a thin film can be formed by directly ejecting a solution containing fine metal powder onto a member to be coated, it is possible to directly form fine wiring, which is a great advantage for circuit miniaturization and cost reduction. Will be given.

In the case of producing a solution containing the fine powder of the metal in a stable manner, it is considered that a suspension may be used to suspend it.

As an example of the dispersant, there is a surfactant, which is adsorbed on the solid-liquid interface to lower and stabilize the interfacial energy.

That is, since this surfactant forms an adsorption protective film on the surface of fine particles, a stable dispersion does not cause direct contact / collision between individual fine particles, so that the electric conductivity of Low, that is, the specific resistance is 10 ⁵ Ωc
It can be a solution of m or more.

Further, the adsorption protective film can be formed only by a surfactant, but there are substances that further strengthen the surface film.

Generally, these substances are called protective colloids or emulsion stabilizers, but by adding such substances, collision of fine powders can be surely avoided and stable electrical characteristics can be obtained. A suspension can be made.

Known protective gums are vegetable gums, starches, alginates, proteins, lecithins, fiber ethers, polyvinyl alcohols, polyvinylpyrrolidones, polyacrylic acid derivatives, colloidal silicic acid and the like.

Generally, a dispersion liquid of fine particles is called a colloid when the size of the fine particles is 0.1 μm or less, and an emulsion or an emulsion when the size of the fine particles is about 0.1 μm to several μm. Has been done.

A dispersion liquid of such fine particles is already on the market, and in this embodiment, an independent dispersion ultrafine particle solution of Ag 30 wt% in which silver fine particles manufactured by Vacuum Metallurgical Co., Ltd. is dispersed in a solvent of toluene was used. .

The dispersed fine particles were produced by the gas evaporation method and had a particle size of 0.1 μm or less, and the individual colloidally dispersed particles were dispersed independently without agglomeration. , The specific resistance of the solution is about 10 ⁷ Ωcm
And high.

When the dispersion liquid of the fine particles was discharged onto the member to be coated by using electrostatic force, a good stringing phenomenon occurred and discharge was possible.

Then, when the dispersion liquid discharged onto the coated member was heated at 300 ° C., the dispersion liquid became a silver thin film having electrical conductivity.

It is considered that this is because the surface active agent or protective colloid covering the silver fine particles was melted by heat and evaporated to form contact aggregation between the silver fine particles.

Of course, this heating step may be omitted as described above in some cases.

As described above, even if the fine particles themselves have a low specific resistance, if the fine particles coated with an insulating material are used as a discharge solution, good discharge can be achieved by electrostatic force and a thin film can be formed. Therefore, since fine wiring can be directly formed, a large effect can be obtained in the cost reduction of the circuit and the wiring on the coated member having a curved surface.

(Fifth Embodiment) The fifth embodiment of the present invention will be described below.

In the first to fourth embodiments, the case where only the electrostatic force is used as the method for ejecting the solution has been shown, but in the present example, in addition to the electrostatic force, the vibration by the piezoelectric element or the like is additionally applied to the solution. I will describe the case.

FIG. 6 shows a structure in which a solution is discharged by using a nozzle that uses both electrostatic force and pressure wave.

In FIG. 6, 17 is a discharge port, 18 is a piezo element for generating a pressure wave in a solution, 19 is a pressure chamber, 20 is a solution supply port, 21 is a back electrode, 22 is a high voltage power supply, and 23 is a cover. The application member is shown.

In this structure, when a voltage is applied to the piezo element 18, the piezo element bends and the volume of the pressure chamber 19 changes.

The change in the volume of the pressure chamber causes the solution in the discharge port 17 to flow, and when the flow is larger than a predetermined value, droplets are discharged in the direction of the member to be coated.

Further, an electric field acts between the ink in the pressure chamber 19 and the back electrode, and a force for attracting the ink toward the coated member acts.

The solution is discharged when an electrostatic force is applied to the solution, or when both a pressure wave and an electrostatic force due to the piezo element exist. When no force is applied to the solution, the surface of the solution is discharged. It is held at the discharge port by tension.

FIG. 7 shows the result of examination of the discharge of the solution using this apparatus and the case where only the electrostatic force is used and the case where the pressure wave is used in combination.

The curve shown in FIG. 7 is obtained by connecting the discharge start points of the solution. When the pressure wave due to the piezoelectric effect is not applied to the solution, the electrostatic force at point C (the strength of the electric field in FIG. 3 is increased). Sano 2
(corresponding to kV / mm) was required, but by applying a pressure wave to the solution, up to point D, the larger the pressure wave, the smaller the electrostatic force can be made relatively small. There is.

At this time, the magnitude of the pressure wave applied to the solution varies depending on the material, size, liquid chamber shape, nozzle diameter, physical properties of the ejected liquid, etc. of the piezo, but generally it is 50 V in terms of the voltage applied to the piezo. To about 500V.

The results of this experiment are shown as a method for discharging a solution.
A state in which the discharge start voltage shown in FIG. 3 of the first embodiment can be lowered and the stringing phenomenon occurs by supplementarily applying a pressure wave to the electrostatic force, as compared with the case where only the electrostatic force acts on the solution. It shows that the area of can be widely taken.

The above will be described with reference to FIG. FIG. 8 shows the relationship between the specific resistance value of the solution and the applied voltage at the start of ejection when the electrostatic force and the pressure wave indicated by the point E in FIG. 7 are applied to the solution.

In FIG. 8, the broken line F is the discharge start voltage in the discharge method using only electrostatic force (corresponding to the curve A in FIG. 3), and the curve G is the discharge start voltage when a pressure wave is applied to the electrostatic force. Is shown.

By applying a pressure wave to the discharging means by the pressure wave, the discharge starting voltage of the solution is lowered, so that the area where the solution causes the stringing phenomenon is added to the area of d part when only the electrostatic force is applied. Then, the portion shown in part e can be added, a solution having a low specific resistance value can be used, and as a result, the range of selection of the discharge solution can be widened.

Then, after the discharge, the thin film can be formed by the same process as in the first embodiment.

As described above, when not only the electrostatic force but also the pressure wave is applied to the discharged solution, the kind of the discharged solution can be further expanded as compared with the solution discharging method using only the electrostatic force.
The types of thin films that can be formed are widened, and it is possible to exert a great effect on the production of circuit components or micromachines.

[0105]

As described above, according to the present invention, a solution substance is used as a thin film forming material, and an electrostatic force alone or a piezoelectric effect is used as an assisting means for discharging the thin film forming material. A solution that can be discharged as compared with a conventional thin film forming method by discharging a solution of a thin film forming material on a formation target member in a stringing state, heating the solvent in the solution, or evaporating by leaving it at room temperature for a predetermined time. There is practically no restriction on the type of the liquid, and since the discharged solution is in a string state, it is possible to form a fine thin film, which is extremely convenient when manufacturing various circuits and devices.

[Brief description of drawings]

FIG. 1 is an explanatory diagram illustrating a discharge principle of the present invention.

FIG. 2 is a configuration diagram for ejecting a solution embodying the ejection principle.

FIG. 3 is a characteristic diagram of the ejection of a solution determined by the relationship between the specific resistance and the electric field, which is obtained by the configuration embodying the ejection principle.

FIG. 4 is another configuration diagram for ejecting a solution embodying the same ejection principle.

FIG. 5 is an overall configuration diagram of a thin film forming apparatus embodying the same ejection principle.

FIG. 6 is another configuration diagram for ejecting a solution embodying the ejection principle.

FIG. 7 is a characteristic diagram of solution ejection determined by a pressure wave-electrostatic force relationship obtained by another configuration embodying the ejection principle.

FIG. 8 is a characteristic diagram of the ejection of the solution determined by the relationship between the specific resistance and the electric field, which is obtained by the configuration embodying the ejection principle.

FIG. 9 is a configuration diagram showing a conventional example.

[Explanation of symbols]

 17 Solution Discharging Section 18 Coated Member 19 Heater Block 20 XY Stage 22 Z Stage 23 Solution Supply Section 24 Control Section

Claims (10)

[Claims] 1. A step of guiding a solution substance containing a thin film forming material and a solvent which dissolves the thin film forming material and having a specific resistance of 10 ⁵ Ωcm or more into a nozzle for ejection, and a step of covering the material in the axial direction of the nozzle. A step of installing a forming member, and a step of applying an electrostatic force to the solution-like substance in the nozzle in the axial direction of the nozzle to discharge the solution-like substance from the nozzle toward the formation target member in the form of a string. A method for forming a thin film having: 2. The method for forming a thin film according to claim 1, wherein the solution-like substance further contains a solvent whose specific resistance can be adjusted. 3. A step of guiding a solution-like substance containing a polymer resin into a nozzle for discharging, a step of installing a member to be formed in an axial direction of the nozzle, and a solution-like substance in the nozzle. A step of applying an electrostatic force in the axial direction of the nozzle to eject the solution-like substance from the nozzle toward the member to be formed in a string shape. 4. A step of guiding a solution substance containing a metal material solution and a dispersant and having a specific resistance of 10 ⁵ Ωcm or more into a nozzle for discharging, and a step of disposing a member to be formed in an axial direction of the nozzle. And a step of applying an electrostatic force to the solution-like substance in the nozzle in the axial direction of the nozzle to eject the solution-like substance from the nozzle toward the formation target member in a string shape. . 5. The method for forming a thin film according to claim 4, wherein the solution substance further contains a protective glue or an emulsion stabilizer. 6. The step of discharging the liquid substance in the form of a string,
6. The method according to claim 1, further comprising the step of applying a pressure wave.
5. The thin film forming method described in any one of 1. 7. The thin film forming method according to claim 1, further comprising the step of heating the solution-like substance discharged onto the formation target member. 8. The thin film forming method according to claim 1, further comprising the step of supplying an inert gas around the solution-like substance discharged onto the formation target member. 9. A supply source of the solution-like substance according to claim 1, a solution-like substance ejecting means for ejecting the solution-like substance, and a thin film formed from the ejected solution-like substance. A thin film forming apparatus comprising: a member to be formed, a stage on which the member to be formed is placed, and heating means for heating the member to be formed. 10. The first moving means capable of moving the solution-like substance ejecting means in a first direction connecting the solution-like substance ejecting means and the member to be formed, and the stage in the first direction. The thin film forming apparatus according to claim 9, further comprising a second moving unit that can move in two directions within a vertical plane.