JPH0888311A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

(57) [Summary] (Correction) [Purpose] With regard to package type semiconductor devices, the miniaturization of the package size and the suppression of lead terminal deformation are simultaneously realized to improve productivity. A semiconductor device in which the entire periphery including the front and back surfaces excluding an external connection area connected to an electrode pad 12a of a semiconductor chip 12 is resin-packaged, and the vicinity of each electrode pad in a state of being connected to each of the electrode pads State 2a in which the external connection portion larger than the electrode pad of the lead piece 23 arranged at is recessed from the resin surface on the electrode pad formation surface side.
Resin package so that it is exposed at.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package type semiconductor device, and more particularly, to a semiconductor device in which the mounting size of the package is reduced and the deformation of the lead terminals due to an external force is simultaneously realized to improve the productivity. The manufacturing method is related.

In the field of electronic equipment in recent years, in order to meet the demand for higher packaging density of semiconductor devices on a circuit board and to meet the demand for smaller size and lower prices, the periphery of a semiconductor chip mounted on a lead frame stage is mounted. A package type semiconductor device is often used, which is formed by resin-molding with the main part of the lead frame.

The semiconductor devices in the following texts are package type semiconductor devices.

[0004]

2. Description of the Related Art FIG. 6 is a diagram for explaining the structure of a normal semiconductor device, in which (6-1) shows the state before the resin package (6
-2) is a cross section showing the state after resin packaging.

In FIG. 6 (6-1), the semiconductor device body 1 before the resin package is mounted and fixed at a predetermined position on the lead frame 11 made of a 42-alloy alloy plate or the like and the stage 11a with silver paste or the like. It is composed of a semiconductor chip (which will be simply referred to as a chip in the following text) 12 and.

In this case, the chip 12 has a plurality of electrode pads 12a formed along two sides facing each other in the longitudinal direction of the surface, and the entire surface excluding the electrode pads 12a is made of, for example, polyimide resin or the like. It is covered with an insulating film.

The lead frame 11 has a thickness of, for example,
It is formed by subjecting a required area of each lead pattern area shown by a broken line A formed by continuous molding to a 0.25 mm band-shaped material to a silver plating treatment or the like.

The lead pattern area A in this case
Includes a stage 11a having an area large enough to mount the required chip 12, and a predetermined position on the outer periphery thereof, that is, a position corresponding to each electrode pad 12a of the chip 12 when the chip 12 is mounted on the stage 11a. An inner lead 11b that spreads radially as a starting point and an outer lead 11c that serves as an external connection terminal are connected to each other by connecting members 11 'on both side edges in the width direction of the strip-shaped material.
It is formed in a state of being connected to.

Therefore, a chip is mounted on the upper surface of the stage 11a.
After mounting and fixing 12 according to the method described above, each electrode pad 12a of the chip 12 and each end of the corresponding inner lead 11b are wire-connected by a bonding machine (not shown) to obtain the semiconductor device shown in the figure. The body 1 can be obtained.

Next, the alternate long and short dash line B of the semiconductor device body 1
The semiconductor device main body 1 is set in a resin molding die (not shown) having a cavity with a size that can be built in at a height including the back surface side of the stage 11a to the bonding wire 13 surrounded by The resin package semiconductor device 1 connected to the connecting member 11 'as shown in (6-2) by injecting the molding resin by the injection molding technique and then removing the mold.
Since 5'can be formed, the required resin package semiconductor device 15 in which only the outer leads 11c are exposed can be obtained by cutting off the connecting member 11 'as shown by the chain double-dashed line C.

Therefore, the exposed outer leads will be described below.
The semiconductor device that can be easily mounted on a circuit board or the like is configured by bending the 11c at a right angle or offset to the stage side.

In such a semiconductor device, since the outer lead 11c serving as an external connection terminal can be made larger than the electrode pad on the chip, there is an advantage that mounting on a circuit board or the like can be facilitated.

[0013]

However, in the semiconductor device having such a configuration, since the inner lead 11b and the outer lead 11c are located around the chip 12 in plan view, the mounting area as a package is equal to the size of the chip 12. In comparison, there is a problem that the size tends to increase, and it may not be possible to meet the demands for downsizing as a semiconductor device, and the outer leads 11c protruding from the surface are deformed by the application of external force during the subsequent steps. There was a problem that there was something.

[0014]

SUMMARY OF THE INVENTION The above-mentioned problem is a semiconductor device in which the entire periphery including the front and back surfaces excluding the external connection area connected to the electrode pads of the semiconductor chip is resin-packaged. A resin package is formed such that an external connection portion, which is larger than the electrode pad, of the lead piece arranged near each electrode pad in a connected state is exposed in a state of being recessed from the resin surface on the electrode pad formation surface side. It is solved by a semiconductor device.

A method for manufacturing a semiconductor device in which the entire periphery including the front and back surfaces of the semiconductor chip is resin-packaged except for an external connection area connected to the electrode pads of the semiconductor chip, the stage for mounting and mounting the semiconductor chip A step of mounting and fixing a semiconductor chip with the electrode pad forming surface as the upper side on the stage of a lead frame provided with, and connecting to the electrode pad on the insulating layer excluding the electrode pad on the electrode pad forming surface A step of arranging and fixing a lead piece having a convex shape in plan view in which an electrode portion to be a region and an external connection portion larger than the electrode portion are integrated so that the end side of the electrode portion is located near the electrode pad. Including the step of wire-bonding connection between each electrode pad and the corresponding electrode portion of the lead piece, and from the stage of the lead frame to the bonding wire. A step of resin-packing the entire circumference of the semiconductor chip except for an opening larger than the electrode pad provided in the external connection portion of the lead piece; and a step of projecting from the resin package surface of a tie bar connected to the stage of the lead frame. This is solved by a method of manufacturing a semiconductor device including a step of cutting a region to be processed.

[0016]

When the external connection electrode area larger than the electrode pad of the chip is formed in the area of the chip, the inner lead and the outer lead described above can be eliminated without deteriorating the mountability on the circuit board, etc. The area can be made smaller than before.

Further, if the external connection electrodes are formed so as not to project from the package surface, it is possible to suppress the deformation of the terminals due to the application of an external force during the subsequent steps.

Therefore, in the present invention, a convex lead piece composed of an electrode portion connected to the electrode pad of the chip and an external connection portion having a larger area than that is arranged at a position corresponding to the upper side of the pad and the electrode pad and After connecting the electrode portion, the lead piece is resin-packaged together with the chip so that the external connection portion of the lead piece is exposed in a state of being recessed from the surface of the package, thereby realizing miniaturization as a semiconductor device. ing.

This means that the lead pieces connected to the respective electrode pads of the chip are located in the chip area, and therefore the inner lead and the outer lead described above can be eliminated.

Therefore, it is possible to easily construct a semiconductor device which has a smaller mounting area than before and does not have an outer lead protruding from the surface, and it is expected that productivity is improved by satisfying customer requirements.

[0021]

1 is a view (No. 1) for explaining a semiconductor device according to the present invention together with a manufacturing process, and FIG. 2 is a view (No. 2) for explaining a semiconductor device according to the present invention together with a manufacturing process.

FIG. 3 is a diagram showing a method of mounting a semiconductor device on a circuit board according to the present invention, FIG. 4 is a diagram (No. 1) for explaining another semiconductor device together with manufacturing steps, and FIG. 5 is another semiconductor. It is FIG. (2) explaining an apparatus with a manufacturing process.

1 and 2, the case of the semiconductor device described with reference to FIG. 6 is taken as an example. Therefore, the same target members and parts as those in FIG. Omit it.

In (1-1) of FIG. 1, the lead frame 21 for realizing the semiconductor device according to the present invention is the chip described in FIG.
A plurality of stages 21a having a sufficient area for mounting 12 are connected to the connecting members 21 ″ on both sides in the width direction of the strip-shaped material made of a 42-alloy alloy plate having a thickness of 0.1 mm to 0.2 mm (4 in the case of FIG. Individual tie bars 21 '.

Therefore, the chip 12 is mounted and fixed in the required area of the stage 21a by using silver paste or the like as shown by the arrow E, and the state shown in (1-1) (A) is obtained. Here, an example of the shape and size of the convex first lead piece 22 and the convex second lead piece 23 longer than that, which are prepared in advance, is shown in the figure (1
-2).

For ease of understanding, the second lead piece 23 will be described first. That is, the same as in stage 21a above 4
In the second lead piece 23 formed by etching the 2-alloy alloy plate, the width w ₁ of the electrode portion 23a is substantially equal to the vertical and horizontal width w of the electrode pad 12a of the chip 12, and a substantially square external connection is formed. The vertical and horizontal width w ₂ of the portion 23b is formed to be slightly smaller than the pitch p between the electrode pads of the chip 12, and the electrode portion 23
The total length l ₁ from the edge of a to the edge of the external connection portion 23b is such that the edge of the external connection portion 23b is the tip 12 of the chip 12 with the edge of the electrode portion 23a positioned near the electrode pad 12a. The length is set so as to be located immediately before the center line D in the width direction.

On the other hand, in the first lead piece 22, the width of the electrode portion 22a is equal to the width w ₁ of the electrode portion 23a of the second lead piece 23,
The vertical and horizontal width w ₃ of the external connection part 22b, which has a substantially square shape, and the electrode part
The entire length l ₂ from the edge of 22a to the edge of the external connection portion 22b is adjacent when the second lead piece 23 is placed on the chip 12 so as to correspond to every other electrode pad 12a. The dimensions are set so that the lead piece 23 can be accommodated in the space formed by the electrode portion 23a and the external connection portion 23b without contacting the lead piece 23.

Therefore, for example, the first lead piece 22 having a double-sided adhesive polyimide tape or the like attached on one side and the second lead piece 22.
Adhere the lead pieces 23 of the above to an unillustrated air tweezers and the like, and make the electrode pad corresponding to the end side of the electrode portion of each lead piece.
By alternately handling and attaching it onto the chip 12 as shown by arrows F ₁ and F ₂ in Fig. (1-3) so that it is located in the vicinity of 12a, the state of (B) in Fig. (1-3) is obtained. can do.

Next, when the corresponding electrode pad and each lead piece electrode portion are bonded and connected by a normal wire bonding technique, each electrode pad 12a of the chip 12 and the corresponding lead pieces 22, 23 (in the case of the figure, (Lead piece 22)
The semiconductor device main body 2'connected by the bonding wires 24 can be constructed as shown in (2-1) of FIG. 2 in a sectional view taken along arrows G to G '.

Therefore, the stage of the semiconductor device body 2'excluding the opening 2a formed so as to have an exposed portion larger than the electrode pad 12a in each external connection portion 22b, 23b of each lead piece 22, 23 described above. 21a to bonding wire 24
The entire periphery including up to, that is, the dot area surrounded by the two-dot chain line H in FIG. 2-2 is resin-molded by the resin molding technique described in FIG. ″
The resin package type semiconductor device 2 connected to can be constructed as shown in (2-3).

[0031] Accordingly, it is possible to obtain the required semiconductor device 2 by disconnecting the semiconductor device 2 in the area of tie bar 21 'as follows arrow I _1, I _2. In the semiconductor device 2 having such a configuration, the external connection portion regions of the lead pieces 22 and 23 connected to the electrode pads 12a of the chip 12 are exposed in the openings 2a of the resin mold which are larger than the electrode pads 12a of the semiconductor chip 12. Therefore, the exposed area of the lead piece of each opening 2a can be used as it is as a terminal for external connection.

In this case, the inner lead 11b and the outer lead 11c in the semiconductor device 1 described with reference to FIG.
Since it is unnecessary, the package 12 can be downsized.

Although the semiconductor device 2 described above exemplifies the case where the electrode pads on the chip are formed only on two opposite sides, the case where the electrode pads are formed on the entire periphery of the chip, that is, on the four sides. Further, by using, for example, the above-mentioned two kinds of lead pieces in combination for each side as described above, it is possible to realize miniaturization as a package.

In FIG. 3 showing the method of mounting the semiconductor device 2 on the circuit board, (3-1) shows the state before mounting, and (3-)
2) is a cross-sectional view of the state after mounting. That is, in (3-1) of the figure, the circuit board 3 has connection electrode portions of the conductor pattern 3a connected to a circuit (not shown) formed at respective positions corresponding to the openings 2a of the semiconductor device 2. .

Then, for example, a solder ball having a height higher than each opening depth of the semiconductor device 2 is pressure-bonded to each connection electrode portion to form a bump-shaped connection electrode 31 protruding from the conductor pattern surface.

Then, the semiconductor device 2 described with reference to FIG.
The opening 2a and the connecting electrode 31 are mounted in correspondence with each other as shown by an arrow J, and further heated to a required temperature in an ordinary heating furnace or the like, so that the semiconductor device 2 is heated as shown in (3-2) of FIG. Can be mounted on the circuit board 3.

The solder balls or the like can be mounted in the same manner as above by fixing the solder balls or the like to the exposed lead pieces of the openings of the semiconductor device 2 instead of the circuit board side. 4 and 5 for explaining another configuration example of the semiconductor device according to the present invention, the case where the electrode pads formed on the chip are in one row will be described as an example.

That is, in (4-1) of FIG. 4, the chip 41 before the resin package has a plurality of electrode pads 41a similar to those of FIG. 6 aligned on the center line in the width direction at the same pitch p ₁ . As with the chip 12 in FIG. 6, the entire surface except the electrode pad 41a is covered with an insulating film such as polyimide resin.

In the first lead frame 42 holding the chip 41, the stage 42a having an area large enough to mount the chip 41 has a strip material made of the same material as the lead frame 21 of FIG. It is formed through four tie bars 42 'connected to the side connecting members 42 ".

Therefore, as indicated by arrow K, the stage 42a
By mounting and fixing the chip 41 in the required area of (1) with silver paste or the like, the state of (C) of (4-1) can be obtained. Here, the second lead frame 43 prepared in advance as in FIG. 1 will be described with reference to (4-2) in the figure.

That is, the second lead frame 43, which is made of a strip-shaped material made of the same material as that of the first lead frame 42 by the continuous breathing technique, has the connecting members 43 ″ on both sides in the width direction.
A region sandwiched by two tie bars 43 'connecting in parallel is used as a pattern region corresponding to each of the chips 41, and one pattern region is located on the right side when attention is paid. reeds 44 for implementing the present invention the tip of the tongue 43a which are formed to protrude to the left side in a comb-teeth shape in the double or pitch "2p _1" of pitch p ₁ in the tie bar 43'a to
Is formed, and the tie bar 43'b located on the left side also has the pitch "2" at a position displaced by the pitch p _{1 from the} tongue 43a.
Tongue 43b formed by comb-like protrusion to the right at p ₁ "
A lead piece 44 similar to the above is formed at the tip of the.

In this case, as shown in the enlarged circled drawing (a) of the extracted lead pieces 44, the electrode portions 44a are formed in the same manner as the first and second lead pieces 22 and 23 described in FIG. The tongue pieces 43a and 43b (in the case of the figure, the tongue piece 43b) are connected to each other in the region of the external connecting portion 44b, which is a convex shape including the substantially square external connecting portion 44b.

The width w ₄ of the electrode portion 44a is set to the above-mentioned chip 41.
Corresponding to the vertical and horizontal width w of the electrode pad 41a of
The vertical and horizontal widths w ₅ of the electrodes are formed slightly smaller than the pitch p ₁ between the electrode pads 41a.
The end side of b, that is, the total length L ₃ up to the connection position with the tongue pieces 43a, 43b, is such that when the end side of the electrode part 44a is positioned near the electrode pad 41a, the end side of the external connection part 44b is the chip 41. The length is set so that it does not exceed the edge in the width direction.

Therefore, for example, if the second lead frame 43 is attached to the chip 41 of the first lead frame 42 described in (4-1) with the double-sided adhesive polyimide tape or the like interposed, as shown by the arrow L. The condition (D) of (4-3) can be achieved.

Next, the corresponding electrode pad 41a and the electrode portion 44a of each lead piece 44 are connected by bonding as in FIG. 6, and each electrode pad 41a of the chip 41 and the corresponding lead piece 44 are connected by the bonding wire 24. (5-1) of FIG. 5 which is a cross-sectional view of the semiconductor device body 4 ′ taken along arrows M to M ′.
Can be configured as shown in.

Then, the tongue piece region of the second lead frame 43 protruding from the chip 41 is cut as shown by an arrow N.
After the state of (5-2), the entire circumference including the stage 42a of the semiconductor device body 4'from the bonding wire 24 except the opening 4a formed so as to form an exposed portion larger than the electrode pad 41a, that is, By molding the dot area surrounded by the chain double-dashed line O in Fig. (5-3) as in Fig. 2,
As shown in (5-4), the resin package type semiconductor device 4 connected to the connecting member 42 ″ by the tie bar 42 ′ can be obtained.

Therefore, the required semiconductor device 4 can be taken out by cutting the semiconductor device 4 by cutting the tie bar 42 'as indicated by arrows P ₁ and P ₂ as in FIG.
In the semiconductor device 4 having such a configuration, each electrode pad is formed in each opening 4a larger than the electrode pad 41a of the semiconductor chip 41.
Since the external connection portion 44b of the lead piece 44 connected to 41a is exposed, the exposed region can be used as it is as an external connection terminal.

[0048]

As described above, according to the present invention, it is possible to provide a semiconductor device in which the miniaturization of the mounting size of a package and the suppression of the deformation of the lead terminal due to an external force are simultaneously realized to improve the productivity.

In the description of the present invention, the case where the lead frame for mounting and fixing the semiconductor chip and the lead piece forming the external connecting portion are made of the same material has been described. It is clear that the same effect can be obtained even if a surface treatment with stable contact such as gold plating is performed.

[Brief description of drawings]

FIG. 1 is a diagram (No. 1) for explaining a semiconductor device according to the present invention together with manufacturing steps.

FIG. 2 is a diagram (No. 2) for explaining the semiconductor device according to the present invention together with the manufacturing process.

FIG. 3 is a diagram showing a method for mounting a semiconductor device of the present invention on a circuit board.

FIG. 4 is a diagram (No. 1) explaining another semiconductor device together with the manufacturing process.

FIG. 5 is a diagram (No. 2) explaining another semiconductor device together with the manufacturing process.

FIG. 6 illustrates a structure of a normal semiconductor device.

[Explanation of symbols]

2,4 Semiconductor device 2 ', 4' Semiconductor device main body 2a, 4a Opening 3 Circuit board 3a Conductor pattern 12,41 Semiconductor chip 12a, 41a Electrode pad 21 Lead frame 21a, 42a Stage 21 ', 42', 43 ', 43'a, 43'b Tie bar 21 ", 42", 43 "Connecting member 22,23,44 Lead piece 22a, 23a Electrode part 22b, 23b External connection part 24 Bonding wire 31 Connection electrode 42 First lead Frame 43 Second lead frame 43a, 43b Tongue piece 44a Electrode section 44b External connection section

Claims (3)

[Claims] 1. A semiconductor device in which the entire periphery including the front and back surfaces except an external connection area connected to an electrode pad of a semiconductor chip is resin-packaged, and each electrode is connected to each of the electrode pads. A semiconductor device characterized in that a lead package arranged in the vicinity of a pad is resin-packaged so that an external connection portion larger than the electrode pad is exposed in a state of being recessed from a resin surface on the electrode pad formation surface side. 2. A method of manufacturing a semiconductor device, wherein the entire periphery including the front and back surfaces of a semiconductor chip is resin-packaged except for an external connection area connected to an electrode pad of the semiconductor chip, the stage for mounting and mounting a semiconductor chip. A step of mounting a semiconductor chip with the electrode pad formation surface as an upper side on the stage of a lead frame provided with, and connecting to the electrode pad on the insulating layer excluding the electrode pad on the electrode pad formation surface. A step of arranging and fixing a lead piece having a convex shape in plan view in which an electrode portion to be a region and an external connection portion larger than the electrode portion are integrated so that the end side of the electrode portion is located near the electrode pad. Including the step of wire-bonding connection between each electrode pad and the corresponding electrode portion of the lead piece, from the stage of the lead frame to the bonding wire. A step of resin-packing the entire circumference of the conductor chip except for an opening larger than the electrode pad provided in the external connection portion of the lead piece; and a step of projecting from the resin package surface of a tie bar connected to the stage of the lead frame. A method of manufacturing a semiconductor device, comprising: cutting a region to be cut. 3. The arrangement of the lead pieces according to claim 2 is one type of convex shape in plan view in which an electrode portion serving as a connection area to the electrode pad and an external connection portion larger than the electrode portion are integrated. A method of manufacturing a semiconductor device, characterized in that a lead piece or a combination of two types of lead pieces having different lengths of the convex electrode portion is used.