JPH09134787A - Organic electroluminescent element and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To eliminate the edge portion of a positive electrode, and eliminate adverse effect resulting from heat generation at the edge portion so as to provide a stable organic EL element by forming the pattern of an insulation layer on a flat transparent positive electrode or between the positive electrode. SOLUTION: Patterning is conducted on a poly urea film deposited on a transparent positive electrode 2 provided on a substrate 1 so as to form an insulation layer 8, and a luminous surface is formed in a pattern. Thereon, a positive hole transport layer 3, a luminous layer 4, and a metal negative electrode 5 are successively formed. By conducting the patterning on the transparent positive electrode so as to provide an insulation layer, when a voltage is applied to the transparent electrode, charges are not allowed to concentrate on an edge but an electric field is uniformly applied to the whole film, and the increase of a non-luminescent area resulting from the short-circuit of elements and the stripping of an organic thin film by the heat generation of an edge portion are prevented so as to stabilize the element. By using poly urea for an insulation layer, the thickness thereof is made thin, and simultaneously the fine patterning can be conducted so as to favorably contribute to the manufacture of a display.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to an organic electroluminescence device (hereinafter referred to as “organic EL device”) and a manufacturing method thereof.

[0002]

2. Description of the Related Art Conventionally, as an organic EL element, as shown in FIG. 5, a transparent anode 2 and a metal cathode 5 provided on a substrate 1 are provided.
It is known that a hole transporting layer 3 and an organic fluorescent dye (light emitting layer) 4 are laminated between and. Further, as shown in FIG. 6, a hole transport layer 3, a light emitting layer 4, and an electron transport layer 6 are provided between the transparent anode 2 and the metal cathode 5 provided on the substrate 1.
A structure in which layers are laminated is also known.

An organic EL device is usually manufactured by sequentially forming a hole transport layer 3, a light emitting layer 4, an electron transport layer 6 and a metal cathode 5 on a patterned transparent anode 2 through a vapor deposition mask. To be done.

[0004]

The film thickness of the organic EL device is usually 100 to 200 nm for the transparent anode 2, 100 to 200 nm for the whole organic layer consisting of the hole transport layer 3, the light emitting layer 4, and the electron transport layer 6. 300 nm, and the cathode 5 is 100 to 300 nm. In the organic EL device, the transparent anode 2 and the metal cathode 5
Since a high electric field of 50 to 100 MV / m is applied between and to operate, the electric field tends to concentrate mainly on the end face (edge part) of the electrode, and the loss thereof becomes Joule heat, and the organic thin film and the metal cathode. There is a problem in that the non-luminous area (dark spot) is generated by peeling the gap between the areas.

Since the above organic layer is produced by the vapor deposition method,
The film is hard to grow on the side of the transparent anode. To that end, FIG.
There is a problem that the film thickness of the organic layer 7 in the portion surrounded by a circle becomes thinner than that in other portions, and the electric field is easily concentrated here. In FIG. 7, 1, 2 and 5 indicate the same as those in FIGS.

Further, since the metal cathode 5 is formed through the vapor deposition mask, it is difficult to obtain a light emitting surface having a fine pattern, which is a problem in manufacturing a display.

The present invention provides an organic EL device having a stable light emitting surface by eliminating the influence of the end face of the transparent anode, solving the problems of short-circuiting of the device and increasing the non-light emitting area, and a method for manufacturing the same. Has an aim.

[0008]

The organic EL element of the present invention is an organic EL element having an anode, an organic layer and a cathode on a substrate, and an insulating layer is provided on the anode or between the anodes by patterning, and Is characterized in that the organic layer and the cathode are formed.

In the organic EL device of the present invention, for example, as shown in FIG.
As shown in FIG. 3, an insulating layer 8 obtained by patterning an insulating film is provided on a transparent anode 2 provided on a substrate 1, and a hole transport layer 3, a light emitting layer 4, an electron transport layer (see FIG. (Not shown)
And the metal cathode 5 is formed into a film. Further, as shown in FIG. 2, when the transparent electrode 2 is patterned on the substrate 1, the insulating film 8 is formed so as to be embedded between the transparent electrodes.

As the insulating layer, for example, a film obtained by subjecting a vapor-deposited polyurea film to ultraviolet exposure and then patterning by heat development (for example, the films described in JP-A-6-80968 and JP-A-7-209863) is used. It is desirable to use. In this developing step, after the exposure to ultraviolet rays, the non-irradiated area is removed by removal with an organic solvent or decomposition by heating. Further, as an insulating layer, SiO ₂ , Si ₃ N ₄ , GeO is used.
A structure in which a film of an inorganic compound such as is patterned using a resist process or the like may be used.

According to the method for producing an organic EL device of the present invention, an insulating layer is formed by patterning on or between anodes provided on a substrate, an organic layer is formed thereon, and then an electrode pattern is formed thereon. It is characterized in that the cathode is formed without mask vapor deposition so that the light emitting surface is formed in the pattern surrounded by the insulating layer.

In the present invention, as described above, since the patterned insulating layer is provided on the transparent anode or between the anodes, light emission occurs at the portion where the insulating layer is removed. Therefore, the metal cathode 5 does not need to use a patterned film. Therefore, the patterning process of the metal cathode can be omitted in the manufacturing process of the organic EL element.

Further, since the influence of the end portion (edge portion) of the transparent anode is eliminated, there is no portion where the electric field is concentrated when a voltage is applied, and the electric field is uniformly applied to the entire film, so that stable light emission is achieved. Can be obtained.

Since the insulating film can be finely processed, the area per pixel can be reduced.
In conventional metal cathode mask vapor deposition, 0.5 mm ×
The area of 0.5 mm is the limit, and if the area is smaller than that, fine processing is difficult.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the accompanying drawings.

First, the structure of the organic EL element will be described.

As the structure of the organic EL element, when the organic compound film such as anode / insulating layer / light emitting layer / cathode is a single layer structure having only a light emitting layer (comprising a polymer film or an oligomer film), An organic compound film such as an insulating layer / hole transporting layer / light emitting layer / cathode or an anode / insulating layer / light emitting layer / electron transporting layer / cathode has two layers of a hole transporting layer and a light emitting layer or a light emitting layer and an electron transporting layer. In the case of structure, anode / insulating layer / hole transport layer / light emitting layer /
The electron transport layer / organic compound film such as the cathode may have a three-layer structure.

Here, as the insulating layer, for example, the above-mentioned JP-A-6-80968 and JP-A-7-209 can be used.
The one described in No. 863 is preferable.

The hole transport layer of the organic compound film is, for example, N, N'-diphenyl-N, N'-bis (3-methylphenyl) 1,1'-biphenyl 4,4 '.
A thin film formed by a vapor deposition method of a low molecular weight dye having a hole transporting property represented by diamine (hereinafter referred to as TPD) or a polymer film having a hole transporting molecular structure (polyamide, polyimide, polyazomethine, etc.) A thin film formed by a vapor deposition polymerization method is used, and a low molecular weight dye having a hole transporting property may be vapor-dispersed in a polymer thin film.

As the light emitting layer, for example, 8-oxyquinolino aluminum complex (hereinafter referred to as Alq ₃ )
Thin films formed by vapor deposition of luminescent dyes, such as stilbene, and thin films formed by vapor deposition polymerization of polymer films (polyurea, polyimide, polyoxadiazole, etc.) having a conjugated structure such as stilbene and oxadiazole. Alternatively, the luminescent dye may be dispersed in a polymer thin film by vapor deposition.

Further, as the electron transport layer, for example, Al
depositing a thin film of q ₃ and an oxadiazole derivative is used,
Alternatively, a thin film of an anthraquinodimethane derivative or a diphenylquinone derivative can be used.

An example of an insulating layer forming apparatus used in the present invention is, as described below, an evaporation source for evaporating a raw material monomer of a photosensitive synthetic resin in a vacuum and a polyurea film formed by vapor deposition polymerization of the raw material monomer. Vapor deposition polymerization chamber in which substrates on which an insulating film is formed are arranged to face each other, an ultraviolet ray source and / or an electron beam source for irradiating the insulating film on the substrate with ultraviolet rays and / or electron beams, and the insulating film And an exposure chamber in which a photomask used for forming a pattern is disposed, and a developing chamber in which a heating device for performing a heat treatment on the insulating film after exposure to irradiation with ultraviolet rays and / or electron beams is disposed.

First, FIG. 3 shows an example of an apparatus for forming a pattern of an insulating layer, especially a polyurea layer. The vapor deposition polymerization chamber 11 for forming a polyurea film and the polyurea film for irradiating ultraviolet rays. It is composed of an exposure chamber 12 and a developing chamber 13 for heat-treating a polyurea film irradiated with ultraviolet rays. The vapor deposition polymerization chamber 11, the exposure chamber 12, and the developing chamber 13 are connected in this order by valves 14b and 14c. There is.

A valve 1 is provided upstream of the vapor deposition polymerization chamber 11.
An external vacuum pump or other vacuum exhaust system 15 via 4a
a vacuum chamber 16 connected to a, and also the developing chamber 13
A vacuum chamber 17 connected to an external vacuum pump or other vacuum exhaust system 15b via a valve 14d is disposed downstream of the vacuum exhaust system 15a and 15b, or both vacuum exhaust systems are operated. The inside of the vapor deposition polymerization chamber 11, the inside of the exposure chamber 12, and the inside of the developing chamber 13 can be set to predetermined pressures.

A substrate holder 18 for holding a substrate 1 for forming a vapor-deposited polymerized film such as a polyurea film is arranged in the vapor-deposited polymerization chamber 11, and the substrate 1 is provided below the vapor-deposition polymerization chamber 11. Evaporating sources 19a and 19b made of glass for facing each other and evaporating diamine as one raw material monomer (a) of the polyurea film and diisocyanate as the other raw material monomer (b), respectively, are provided. , 19b provided in the vicinity thereof, and evaporation monitors 20a and 20b for crystal vibration, and heaters 21a and 21b.
Thus, the evaporation amount of the raw material monomers (a) and (b) can be controlled to a predetermined temperature that always keeps the same.

A shutter 22 is arranged between the substrate 1 and both evaporation sources 19a and 19b.
A partition plate 23 was provided between a and 19b.

The substrate holder 1 is provided below the inside of the exposure chamber 12.
The ultraviolet light source 24 is provided so as to face the substrate 1 held on the substrate 8, and a photomask 25 having a pattern of a predetermined shape is provided in front of the substrate 1 to be formed on the surface of the substrate 1 in the vapor deposition polymerization chamber 11. The polyurea film was irradiated with ultraviolet rays from an ultraviolet ray source 24 so as to be exposed in a pattern.

In the developing chamber 13, a heating device 26 comprising a halogen lamp is provided on the back side of the substrate 1 held by the substrate holder 18, and a polyurea film crosslinked by being irradiated with ultraviolet rays in the exposing chamber 12 is provided. Was heated to a predetermined temperature to depolymerize and remove the polyurea film in the unexposed portion.

First, as a transparent electrode, for example, ITO (Indium-Tin) is used by using the insulating layer forming apparatus as shown in FIG.
The substrate 1 on which -Oxide) has been formed is charged into the vacuum chamber 16 and conveyed to the vapor deposition polymerization chamber 11 to form an insulating film such as a polyurea film on the substrate 1 placed on the substrate holder 18. Next, the substrate 1 is carried out to the vacuum chamber (developing chamber) 12 and exposed by the ultraviolet ray source 24 through the photomask 25. Then, it is conveyed to the vacuum chamber 13, and the ultraviolet ray non-irradiated portion is decomposed and evaporated by the heating device 26 to be removed, and the patterning of the insulating film is completed.

FIG. 4 shows an example of an apparatus used for manufacturing the organic EL element of the present invention, but here, an anode forming apparatus and an insulating layer forming apparatus are not shown. In the figure, 27 is an oxygen plasma treatment chamber, 28 is a deposition chamber for an organic compound film such as a hole transport layer, a light emitting layer, an electron transport layer, 29 is a cathode formation chamber, 30 is a protective film formation chamber, and 31 is ultraviolet treatment. Indicates a room. Then, the oxygen plasma processing chamber 27, the film forming chamber 28,
Cathode forming chamber 29, protective film forming chamber 30, ultraviolet treatment chamber 31
Gate valves 32a, 3 that can be opened and closed between the chambers
It is partitioned by 2b, 32c and 32d, and a tray type transfer system 33 for transferring the substrate 1 is arranged in each chamber.

The inside of the oxygen plasma processing chamber 27 is connected to a vacuum exhaust system 34 such as a vacuum pump, and the inside of the oxygen plasma processing chamber 27 is provided with a copper RF electrode 35 for performing plasma processing on an anode such as an ITO film. did.

The inside of the film forming chamber 28 is connected to a vacuum exhaust system 36 such as a vacuum pump, and TPD, A
A heater 3 around which a dye material T such as lq ₃ is wound.
Two dye evaporation sources 38a, 38b made of alumina or glass, which are heated to a predetermined temperature by 7a, 37b to evaporate, are arranged in parallel, and a raw material monomer for the vapor-deposited polymer film is provided on the other lower side in the film forming chamber 28. U and V are infrared lamps 39a and 3
Glass or metal organic evaporation sources 40a and 40b, which are heated to a predetermined temperature by 9b and evaporated, are provided. A substrate 1 on which an organic compound film is to be formed is disposed facing the dye evaporation sources 38a and 38b and the organic substance evaporation sources 40a and 40b above the film forming chamber 28, and the back surface of the substrate 1 is provided on the substrate 1. A sheath heater 41 for heating the formed polymer film was provided.

Further, the substrate 1 and the dye evaporation sources 38a and 38
b between the shutters 42a and 42b, and the substrate 1
Between the organic substance evaporation sources 40a and 40b and the shutter 4
3 were arranged respectively. Further, thermocouples 44a and 44b are arranged in the organic substance evaporation sources 40a and 40b, respectively.

The inside of the cathode forming chamber 29 is connected to a vacuum exhaust system 45 such as a vacuum pump, and one raw material W of the cathode (raw material W is, for example, Mg) is provided in the lower one inside the cathode forming chamber 29 around the periphery thereof. A cathode material evaporation source 47 made of alumina, which is heated to a predetermined temperature by a wound heater 46 to evaporate, is provided, and the other raw material X of the cathode is provided on the other lower side in the cathode forming chamber 29 (the raw material X is, for example, , Ag) is provided with a cathode material evaporation source 48 consisting of a boat made of tungsten or molybdenum for evaporating by heating it to a predetermined temperature.

A shutter 49 is provided between the substrate 1 and the cathode material evaporation source 47, and a substrate 1 and the cathode material evaporation source 48 are provided.
A shutter 50 is provided between each of them.

The inside of the protective film forming chamber 30 is connected to a vacuum exhaust system 51 such as a vacuum pump, and the raw material monomers Y and Z (for example, polyurea film) of a protective film such as a polyurea film are provided below the inside of the protective film forming chamber 30.
The raw material Y is a diamine monomer, and the raw material monomer Z is a diisocyanate monomer).
The protective film evaporation sources 53a and 53b made of glass or metal, which are heated to a predetermined temperature and vaporized, are provided.

The substrate 1 and the protective film evaporation sources 53a and 5
A shutter 54 was provided between the substrate 3 and 3b, and a crystal vibration type film thickness monitor 55 of a protective film was provided near the substrate 1. Further, thermocouples 56a and 56b are arranged in the protective film evaporation sources 53a and 53b, respectively.

The inside of the ultraviolet treatment chamber 31 is connected to a vacuum exhaust system 57 such as a vacuum pump, and the inside of the ultraviolet treatment chamber 31 is irradiated with ultraviolet rays to cross-link low molecular weight polyurea and polymerize it to form a polyurea protective film. An ultraviolet lamp 58 is provided for this purpose.

In FIG. 4, 59 is an organic matter evaporation source 40a.
And a partition plate provided between 40b and 40b, 60 is a protective film evaporation source 5
The partition plates provided between 3a and 53b are shown respectively.

Using the organic EL device manufacturing apparatus as shown in FIG. 4, the substrate obtained by patterning an insulating film such as a polyurea film is placed in the vacuum chamber 27 of FIG. 4 and subjected to oxygen plasma treatment. I do. The treatment in this case serves to remove the insulating film remaining on the transparent anode and flatten the transparent anode.
Then, the organic layer 7 including the hole transport layer 3, the light emitting layer 4, the electron transport layer 6 and the like is deposited in the deposition chamber 28. Then, a cathode is formed in the cathode forming chamber 29 and a protective film is formed in the protective film forming chamber 30 to complete the EL element.

The apparatus shown in FIGS. 3 and 4 above also includes
The substrate is transferred from the charging chamber through the integrated insulating film forming chamber to the oxygen plasma processing chamber, the organic layer forming chamber, the cathode forming chamber, the occasional protective film forming chamber, and then the take-out chamber shown in FIG. It may be configured to be transported to.

In the case of an organic EL element having a structure in which the insulating layer 8 is embedded between the patterned anodes (ITO) 2 and planarized as shown in FIG.
For example, ITO is formed on the substrate 1 by patterning, an insulating film is formed thereon, and then, when the insulating film is made of polyurea, (1) UV irradiation (on ITO),
(2) By heat development, the insulating film also has SiO ₂
Alternatively, when it is made of Si ₃ N ₄ , the photolithography process, (1)
Resist coating, (2) exposure, (3) etching, (4)
By removing the resist, the insulating film on the ITO is removed so that the remaining insulating film is embedded between the ITO so as to be planarized, and then, as described above, the hole transport layer 3, the light emitting layer 4, and the electron transport layer. The EL element may be manufactured by forming an organic layer including a layer (not shown) and the like, then forming the cathode 5 and forming a protective film (not shown).

[0043]

Embodiments of the present invention will be described below with reference to the accompanying drawings.

Example 1 Production of an organic EL device having the structure shown in FIG. 1 will be described.

ITO (In ₂ O ₃ −1) was formed on the glass substrate 1 washed by boiling in isopropanol by a sputtering method.
A 0% SnO ₂ ) film 2 was formed at 1000 Å. This substrate was charged into a vacuum chamber 16 of a patterning device for an insulating film such as a polyurea film shown in FIG. 3, and after reaching 1.0 × 10 ⁻³ Pa, the valve 14a was opened and the substrate was transferred to the vapor deposition polymerization chamber 11. .
Under a pressure of 5.3 × 10 ⁻³ Pa, 4,4′-diaminodiphenylmethane (MDA) a and 4,4′-diphenylmethane diisocyanate (MDI) b were evaporated as a source 19a,
From each of 19b, 6000Å of polyurea in an oligomer state was deposited on the substrate 1 having the ITO film 2 by evaporation. The valve 14b was opened, the substrate was transferred to the vacuum chamber 12, and light having a central wavelength of 254 nm was irradiated by the ultraviolet source 24 through the photomask 25 for 30 minutes. Then valve 1
4c is opened, the substrate is transferred to the vacuum chamber 13, and 1.33
The substrate is heated to 200 ° C. with a heating device 26 under a pressure of × 10 ⁻³ Pa.
The film in the unexposed portion was decomposed and evaporated to remove by heating within a range of up to 300 ° C. Thus, the patterned polyurea film 8 was completed on the ITO film 2. At this time, the film thickness of the exposed portion became 2000 liters. The substrate was taken out through the vacuum chamber 17 and loaded into the vacuum chamber (oxygen plasma processing chamber) 27 of the organic EL element manufacturing apparatus shown in FIG. After evacuating the processing chamber to 1.33 × 10 ⁻³ Pa, oxygen was introduced, and plasma treatment was performed for 5 minutes at a pressure of 6.65 Pa and an RF power source at a power of 50 W. Gate valve 32
a is opened, and this substrate is transferred to the film forming chamber 28.
N, N'-diphenyl-N, at a vacuum degree of × 10 ^-4 Pa
N'-bis (3-methylphenyl) -1,1'-diphenyl-4,4'-diamine (TPD) was evaporated from the evaporation source 38a, and the hole transport layer 3 was deposited on the substrate 1 by 500Å. Next, an 8-oxyquinolino aluminum complex (A
1q ₃ ) is evaporated from the evaporation source 38b, and the light emitting layer 4 is heated to 50
0 ° was formed. After that, open the gate valve 32b,
The substrate is transferred to the cathode formation chamber 29 and 1.33 × 10 ⁻⁴ Pa
With a vacuum degree of, magnesium and silver are evaporated from the evaporation sources 47 and 48 at an atomic ratio of 10: 1, and the MgAg negative electrode 5 is heated to 20%.
An organic EL device was completed by forming a film of 00Å.

A luminance and a current value were measured by applying a DC voltage to the element using the insulating pattern thus obtained. It was 10500 cd / m ² (130 mA at 11 V).
A luminance of / cm ² ) was obtained. The light emission starting voltage was 3V. On the other hand, when the insulating pattern is not used, 1000
The current density at 0 cd / m ² was 500 mA / cm ² . Therefore, it can be seen that the use of the insulating pattern reduced the current density at the same brightness.

(Example 2) Organic EL prepared in Example 1
Open the gate valve 21c to open the protective film forming chamber 3
Then, the polyurea protective film was deposited on the device to a thickness of 1 μm. That is, after the protective film forming chamber 30 is evacuated to 1.33 × 10 ⁻³ Pa by the vacuum exhaust system 51, the temperature of the raw material monomer Y (4,4′-diaminodiphenylmethane: hereinafter referred to as MDA) in the evaporation source 53a is changed. While heating with the heater 52a to 100 ° C. while measuring with the thermocouple 56a, while measuring the temperature of the raw material monomer Z (4,4′-diphenylmethane diisocyanate: hereinafter referred to as MDI) in the evaporation source 53b with the thermocouple 56b. After heating to 70 ° C. by the heater 52b and setting each evaporation rate so that the monomer composition ratio of MDA: MDI becomes 1: 1, the shutter 5
MDA and MDI were evaporated by the opening / closing operation of No. 4 and deposited to a film thickness of 1 μm on the cathode by the film thickness monitor 55, and then polymerized on the cathode to form a polyurea film.

The device thus obtained was continuously driven in the atmosphere at a current density of 10 mA / cm ² (initial brightness of 500 cd / m ² ) and the brightness half-life was 730 hours. The non-emission region appeared after about 300 hours, but its diameter did not become larger than 100 μm.

(Example 3) ITO / polyurea pattern /
TPD (hole transport layer) 500Å / Alq ₃ (light emitting layer) 1
00Å / polyazomethine (electron transport layer) 300Å / Mg
Ag (cathode) 2000Å) / polyurea protective film 10000
An organic EL device having a structure like Å was produced.

The same process as in Example 1 was repeated until the film formation of Alq ₃ . Organic substance evaporation source 4 in the film forming chamber 28 of FIG.
0a was filled with terephthalaldehyde, and organic source 40b was filled with para-phenylenediamine, and co-evaporation was performed to form a polyazomethine film having a thickness of 300Å. The manufacturing process after the MgAg electrode was the same as that described in Examples 1 and 2.

The organic EL device thus obtained was continuously driven in the atmosphere at a current density of 10 mA / cm ² and 700 cd / m ² , and the luminance half-life was 1000 hours. The non-emission region appeared after about 300 hours, but its diameter did not become larger than 100 μm.

(Embodiment 4) An example in which a SiO ₂ film is used as the insulating layer 8 instead of the polyurea film is shown.

The substrate on which the ITO film is formed is converted into the existing plasma CV.
Set it in the D device, and 20 SCCM of SiH ₄ , 30 SC
O ₂ of CM is flowed, the substrate temperature is 200 ° C., 0.6 Pa, 2
A SiO ₂ film of 3000 Å was deposited under the condition of 00W. This substrate was etched by a resist process to pattern the insulating layer (SiO ₂ film) 8. Then, TPD, Alq ₃ , MgAg, and a polyurea protective film were formed in this order to manufacture an organic EL device.

The element thus obtained was applied with a current density of 10 m.
When continuously driven in the atmosphere at A / cm ² and an initial luminance of 500 cd / m ² , the luminance half time was 500 hours. The non-emissive area appears after about 300 hours,
Its diameter did not become larger than 100 μm.

Example 5 An example in which a GeO film is used as the insulating layer 8 will be shown.

A patterned metal mask made of stainless steel was brought into close contact with the substrate on which the ITO film was formed, and the substrate was set in a GeO film forming apparatus. GeO is evaporated by a resistance heating method using a port made of tantalum or molybdenum to obtain 2000
た Deposited. A GeO pattern was formed by such mask deposition. After that, TPD, Alq ₃ , MgA
g and a polyurea protective film were formed in this order to manufacture an organic EL device.

The device thus obtained was applied with a current density of 10 m.
When continuously driven in the atmosphere at A / cm ² and an initial luminance of 500 cd / m ² , the luminance half time was 700 hours. The non-emissive area appears after about 300 hours,
Its diameter did not become larger than 100 μm.

Example 6 An example using a Si ₃ N ₄ film as the insulating layer 8 will be described.

The existing plasma CV is applied to the substrate on which the ITO film is formed.
Set it in the D device, and 20 SCCM of SiH ₄ , 30 SC
Pour N ₂ of CM, substrate temperature 250 ° C., 0.6 Pa, 2
A Si ₃ N ₄ film was deposited at 3000 W under the condition of 00W. This substrate was etched by a resist process to pattern the insulating layer (Si ₃ N ₄ film) 8. Then, TPD, Alq ₃ , MgAg, and a polyurea protective film were formed in this order to manufacture an organic EL device.

The element thus obtained was applied with a current density of 10 m.
When continuously driven in the atmosphere at A / cm ² and an initial luminance of 500 cd / m ² , the luminance half time was 500 hours. The non-emissive area appears after about 300 hours,
Its diameter did not become larger than 100 μm.

In the case of the organic EL element having a structure in which the insulating film 8 is provided between the patterned anodes (ITO) 2 as shown in FIG. can get.

[0062]

According to the organic EL element of the present invention, since the pattern of the insulating layer is formed on the flat transparent anode or between the anodes, the influence of the edge of the anode is eliminated, so that the element is not short-circuited or non-exposed. The problem of increasing the number of light emitting parts is eliminated.

Further, the insulating layer can be finely patterned,
Since the cathode may be solid, a light emitting surface with a small area can be obtained. Therefore, it is advantageous in manufacturing a display.

Further, when the insulating layer pattern is formed by using polyurea, the withstand voltage is 1000 MV / m or more, so that the thickness of the insulating layer can be reduced to about 1000 Å. Therefore, the entire element can be flattened.

[Brief description of the drawings]

FIG. 1 is a schematic partial cross-sectional view showing the structure of an embodiment of an organic EL device of the present invention.

FIG. 2 is a schematic partial cross-sectional view showing the structure of another embodiment of the organic EL element of the present invention.

FIG. 3 is an explanatory diagram of an example of an insulating layer forming apparatus according to the present invention.

FIG. 4 is an explanatory diagram of an example of an organic EL element manufacturing apparatus of the present invention.

FIG. 5 is a schematic partial cross-sectional view showing the structure of an example of a conventional organic EL element.

FIG. 6 is a schematic partial cross-sectional view showing a structure of an example of a conventional organic EL device having a three-layer structure.

FIG. 7 is a schematic partial cross-sectional view showing the structure of an example of a conventional organic EL device for explaining the problems.

[Explanation of symbols]

1 Substrate 2 Transparent Anode 3 Hole Transport Layer 4 Light Emitting Layer 5 Metal Cathode 6 Electron Transport Layer 7 Organic Layer 8 Insulating Layer 11 Vapor Deposition Room 12 Exposure Room 13 Development Room (Vacuum Room) 14a, 14b,
14c, 14d Valves 15a, 15b Vacuum exhaust system 16, 17 Vacuum chamber 18 Substrate holder 19a, 19b
Evaporation source 20a, 20b Evaporation monitor 21a, 21b
Heater 22 Shutter 23 Partition plate 24 Ultraviolet source 25 Photomask 26 Heating device 27 Oxygen plasma treatment chamber 28 Organic compound film deposition chamber 29 Cathode formation chamber 30 Protective film formation chamber 31 Ultraviolet treatment chamber 32a, 32b, 32c, 32d Gate valve 33 tray type transfer system 34 vacuum exhaust system 35 RF electrode 36 vacuum exhaust system 37a, 37b heater 38a, 38b
Dye evaporation source 39a, 39b Infrared lamp 40a, 40b
Organic matter evaporation source 41 Sheath heater 42a, 42b
Shutter 43 Shutter 44a, 44b
Thermocouple 45 Vacuum exhaust system 46 Heater 47, 48 Cathode material evaporation source 49, 50 Shutter 51 Vacuum exhaust system 52a, 52b
Infrared heater 53a, 53b Protective film evaporation source 54 Shutter 55 Crystal vibration type film thickness monitor 56a, 56b
Thermocouple 57 Vacuum exhaust system 58 Ultraviolet lamp 59, 60 Partition plate a, b Raw material monomer T Dye raw material U, V, Y, Z Raw material monomer W, X Cathode raw material

Claims (4)

[Claims] 1. In an organic electroluminescence device having an anode, an organic layer and a cathode on a substrate, an insulating layer is provided on the anode or between the anodes by patterning, and the organic layer and the cathode are formed thereon. An organic electroluminescence device characterized by the above. 2. The organic electroluminescent device according to claim 1, wherein the insulating layer has a structure in which a polyurea film is exposed to ultraviolet rays and then patterned by heat development. 3. The insulating layer is a SiO ₂ film or a Si ₃ film.
The organic electroluminescence device according to claim 1, which has a structure obtained by patterning an N ₄ film or a GeO film. 4. An insulating layer is formed by patterning on an anode provided on a substrate or between the anodes, an organic layer is formed thereon, and then a cathode is formed thereon without mask vapor deposition of an electrode pattern. Then, a light emitting surface is formed in a pattern surrounded by the insulating layer, and a method for manufacturing an organic electroluminescence element.