JPH09181211A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To protect a semiconductor carrier against damages at the time of inspecting or transferring a semiconductor device. SOLUTION: The parts vulnerable to damages are removed by subjecting the corner parts 18 of a semiconductor carrier 14 to round cutting. When a semiconductor device 15 is transferred while being encased, the semiconductor carrier 14 is not damaged even upon collision against the side wall 16 of a transfer case 17 and thereby the semiconductor device is protected against damage.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device of a type in which a semiconductor element is bonded onto a carrier on which a circuit is formed, and the periphery of the semiconductor element is resin-molded, and particularly when inspected by a handler or as a product. The present invention relates to a semiconductor device having a structure in which the semiconductor device is prevented from being broken during transportation.

[0002]

2. Description of the Related Art Recently, as a method for mounting a semiconductor element on a circuit board, a package using a flip chip mounting method has been studied.

FIG. 7 shows a chip size package (CSP).
Is a cross-sectional view of a semiconductor device referred to as FIG. 8, FIG. 8 is a plan view thereof, and FIG. 9 is a bottom view thereof. In addition, FIG. 7 is AA of FIG.
A cross section along line 1 is shown.

As shown in FIG.
The semiconductor element 3 on which the u bump 2 is formed is bonded to a semiconductor carrier 4, which is a multilayer circuit board made of a material such as ceramic, which is easily damaged by an external force, in a face-down method, that is, with the front surface side facing down. . A plurality of electrodes 5 for conduction with the semiconductor element 3 are formed on the upper surface of the semiconductor carrier 4, and the electrodes 5 and the two-stepped Au bumps 2 formed on the semiconductor element 3 are made of a conductive adhesive. It is joined at 6. The gap between the bonded semiconductor element 3 and the semiconductor carrier 4 and the end of the semiconductor element 3 are
It is filled and covered with the epoxy type sealing resin 7.

The electrode 5 is routed on the surface of the semiconductor carrier 4 by the wiring pattern 8 and is electrically connected to the external electrode terminal 10 on the back surface of the semiconductor carrier 4 by the via 9.
The wiring pattern 8 on the front surface of the semiconductor carrier 4 is routed inside the semiconductor carrier 4 which is a laminated substrate by the via 9, and the external electrode terminals 10 are arranged on the back surface of the semiconductor carrier 4 as shown in FIG. Configure.

With respect to the semiconductor device called a chip size package (CSP) configured as described above, the finished product is inspected by the inspection device called a handler for its electrical characteristics and the like, and is also transported. At this time, as shown in FIG. 10, the paper is stored in a carrying case 12 surrounded by side walls 11 on four sides and carried.

[0007]

However, as shown in FIG. 10, the completed semiconductor device 13 is transferred to the carrier case 1.
When the sheet is housed in the sheet 2 and conveyed, the side wall 11 of the conveying case 12 is affected by vibration during the conveyance, movement of the semiconductor device 13 during the conveyance, and the like.
In some cases, the corners of the semiconductor carrier 4 constituting the completed semiconductor device 13 collide with each other, and the corners are damaged, and the semiconductor device itself becomes defective. This is because the semiconductor carrier 4 of the semiconductor device 13 is composed of a multilayer circuit board made of a material such as ceramic, which is easily damaged by an external force, and has a major cause of being easily damaged.

The present invention solves the problems found in such conventional products, and provides a semiconductor carrier composed of a multilayer circuit board made of a material such as ceramics without changing the characteristics of the semiconductor device. An object of the present invention is to provide a semiconductor device which is used as it is, paying attention to a place where the semiconductor carrier is easily damaged, and having a structure in which the semiconductor carrier is not damaged during inspection or transportation of the semiconductor device.

[0009]

According to the present invention, a semiconductor carrier constituting a semiconductor device is constituted by a multilayer circuit board made of a material such as ceramic which is easily damaged by an external force. It was born from the idea of removing the corners by paying attention to the corners as places that are easily damaged by external force.

That is, the semiconductor device according to the present invention is
A semiconductor carrier composed of an insulating substrate having a plurality of electrodes on the top surface and external electrode terminals arranged on the bottom surface; a semiconductor element bonded to the top surface of the semiconductor carrier via bump electrodes; a semiconductor element and the semiconductor carrier; A semiconductor device comprising a resin that fills and coats a space and a peripheral edge of a semiconductor element, in which a corner portion of a semiconductor carrier is subjected to a cutting treatment. Specifically, the semiconductor carrier has rounded corners, and substantially the corners are removed.
This prevents the semiconductor carrier of the semiconductor device from colliding with the side wall and being damaged when the carrier is housed in a carrying case surrounded by the side walls on all sides and conveyed. Furthermore, the semiconductor device of the present invention has a semiconductor carrier whose planar shape is substantially circular, and prevents the semiconductor carrier from cracking due to collision with the outside such as during transportation.

Since the corners of the semiconductor carrier constituting the semiconductor device are cut and rounded as described above, when the semiconductor carrier is housed in a carrying case surrounded by side walls and is carried. In addition, even if the semiconductor carrier of the semiconductor device collides with the side wall, it can be prevented from being damaged. This is due to the action of focusing on the corner portion of the semiconductor carrier, which is easily damaged, and deleting the corner portion. Further, even if a semiconductor carrier having a substantially circular planar shape is used, a portion that is easily damaged is deleted, so that the semiconductor carrier can be prevented from being broken due to an external collision during transportation.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION An example of an embodiment of a semiconductor device of the present invention will be described below with reference to the drawings.

FIG. 1 is a sectional view of this embodiment, FIG. 2 is a plan view thereof, and FIG. 3 is a bottom view thereof. Note that FIG. 1 shows the structure of a cross section taken along a line AA1 in FIG.

First, the structure of the present embodiment will be described. As shown in FIGS. 1, 2 and 3, in the semiconductor device of the present embodiment, the semiconductor element 3 in which the Au bumps 2 are formed on the electrode pads 1 on the surface is a face-down type,
That is, with the surface side facing down, it is bonded to the semiconductor carrier 14 which is a multilayer circuit board made of a material such as ceramic that is easily damaged by an external force. A plurality of electrodes 5 for conduction with the semiconductor element 3 are formed on the upper surface of the semiconductor carrier 14, and the electrodes 5 and the two-step-shaped Au bumps 2 formed on the semiconductor element 3 are conductively bonded. Bonded with agent 6. The gap between the joined semiconductor element 3 and the semiconductor carrier 14 and the end of the semiconductor element 3 are filled and covered with an epoxy-based sealing resin 7.

The electrode 5 is laid out on the surface of the semiconductor carrier 14 by the wiring pattern 8 and electrically connected to the external electrode terminal 10 on the back surface of the semiconductor carrier 14 by the via 9. The wiring pattern 8 on the surface of the semiconductor carrier 14
Are routed inside the semiconductor carrier 14 which is a laminated substrate by the vias 9 to form an array of the external electrode terminals 10 on the back surface of the semiconductor carrier 14 as shown in FIG.

The semiconductor device 15 configured as described above
The electrical characteristics and the like are measured by an inspection device called a handler and inspected, and at the time of transportation, the transportation is carried in a transportation case 17 surrounded by side walls 16 on four sides as shown in FIG. .

Here, in the semiconductor device of the present embodiment, the semiconductor carrier 14 has corners 18 with rounded corners, and the portions that are easily damaged are removed.
When the semiconductor device 15 is stored in the transport case 17 and transported as described above, even if the semiconductor carrier 14 collides with the side wall 16 of the transport case 17, the semiconductor carrier 14 is not damaged, and defects due to damage as a semiconductor device are eliminated. be able to. The semiconductor carrier 14 in the present embodiment is
Has a thickness of about 500 μm.

Next, another example of the embodiment of the semiconductor device of the present invention will be described. FIG. 5 is a plan view of this embodiment,
FIG. 6 is a bottom view thereof. The structure of the cross section is substantially the same as that of the embodiment shown in FIG.

In the semiconductor device of the present embodiment, as shown in the figure, for a semiconductor carrier 19 having an electrode to be joined to a bump electrode of a semiconductor element, a wiring pattern 8 for leading the electrode to the bottom surface, and a via 9. The semiconductor element 3 is bonded, and the periphery of the semiconductor element 3 is molded with the sealing resin 7. The external electrode terminals 10 are arranged on the bottom surface of the semiconductor carrier 19. Although the structure is similar to that of the embodiment shown in FIG. 1, the semiconductor carrier 19 constituting the semiconductor device has a substantially circular planar shape.
It has a structure in which all parts that are easily damaged are removed. Therefore, it is possible to prevent the semiconductor carrier 19 from breaking due to collision with the outside such as during transportation.

The structure of this embodiment is particularly effective when the semiconductor carriers 14 and 19 constituting the semiconductor device are a laminated circuit board made of a fragile insulating material such as ceramic. As an example, an example of manufacturing the semiconductor carrier will be described below.

First, the ceramic powder is put into a mixing mill together with the glass powder and the solvent, and rotary mixing and pulverization are performed. Further, an organic binder is added and further mixed. This ceramic powder is usually composed mainly of alumina, but powders of aluminum nitride (AlN), silicon carbide (SiC), etc. are also added to improve the thermal conductivity. After thorough mixing, the obtained sludge, so-called slurry, is applied to a conveying sheet in an arbitrary thickness for forming a green sheet. A doctor blade method or the like is used to adjust the thickness. By drying the solvent of the slurry on the carrying sheet using infrared rays and hot air, a green sheet having excellent elasticity and excellent permeability of the paste solvent at the time of printing the conductive paste is obtained. When the wiring rule is 200 μm or more as a positioning method for this green sheet, a guide hole is directly provided in the green sheet, and when the wiring rule is less than 200 μm, it is attached to a holding frame having a guide hole. Next, holes are formed by mechanical processing in the front and back portions of the green sheet where electrical conduction is required. These holes are filled with a conductive paste mainly containing Cu powder by a printing method.

Next, after printing a necessary circuit on the surface of the green sheet, it is dried, and the printed circuit is embedded in the green sheet with an appropriate load. The purpose of this is to flatten the surface of the green sheet on which the circuit is printed, thereby preventing lamination failure in the next lamination step, so-called delamination. In the laminating step, the laminated green sheets are accurately pressed by the guide holes provided in the green sheet or the guide holes of the holding frame to firmly bond the green sheets.

Sn-Pb eutectic solder cream is applied to the grid electrodes formed on the back surface of the ceramic carrier thus completed. Then, the high melting point solder balls are supplied to the applied solder cream using an alignment jig, and then the external electrode terminals, which are the solder bumps, are formed by heating and melting using a reflow furnace or the like to form a semiconductor carrier. .

As described above, in the present embodiment, the semiconductor carrier which constitutes the semiconductor carrier is constituted by the multilayer circuit board made of a material such as ceramic which is easily damaged by an external force. In this case, the semiconductor carrier is damaged by the external force. It was created based on the idea of removing the corners by focusing on the corners as an easy part.Since the corners of the semiconductor carrier are cut and rounded, the sidewalls It is possible to prevent the side wall from being damaged even if the semiconductor carrier of the semiconductor device collides with the side wall of the carrying case which is housed in a carrying case surrounded by four sides and carried. Also, it is possible to prevent the semiconductor carrier from being damaged by the pressure during inspection by the handler. Further, even if a semiconductor carrier having a substantially circular planar shape is used, since the portion that is easily damaged is deleted, it is possible to prevent the semiconductor carrier from being broken due to an external collision during transportation.

[0025]

According to the semiconductor device of the present invention, a semiconductor carrier made of an insulating substrate having a plurality of electrodes on the upper surface and external electrode terminals arranged on the bottom surface is bonded to the upper surface of the semiconductor carrier via bump electrodes. The semiconductor carrier has a rounded corner so that the semiconductor carrier will not be damaged even if it collides with the side wall of the carrier case during transportation. Can be prevented. Further, by making the plane shape of the semiconductor carrier substantially circular and removing the damaged portion, it is possible to prevent the semiconductor carrier from cracking due to external collision during transportation.

[Brief description of the drawings]

FIG. 1 is a sectional view of an example of an embodiment of a semiconductor device of the present invention.

FIG. 2 is a plan view of an example of an embodiment of a semiconductor device of the present invention.

FIG. 3 is a bottom view of an example of the embodiment of the semiconductor device of the present invention.

FIG. 4 is a plan view showing a carrying state of an example of an embodiment of a semiconductor device of the present invention.

FIG. 5 is a plan view of another example of the embodiment of the semiconductor device of the present invention.

FIG. 6 is a bottom view of another example of the embodiment of the semiconductor device of the present invention.

FIG. 7 is a sectional view of a conventional semiconductor device.

FIG. 8 is a plan view of a conventional semiconductor device.

FIG. 9 is a bottom view of a conventional semiconductor device.

FIG. 10 is a plan view showing a transportation state of a conventional semiconductor device.

[Explanation of symbols]

 1 Electrode Pad 2 Au Bump 3 Semiconductor Element 4 Semiconductor Carrier 5 Electrode 6 Conductive Adhesive 7 Sealing Resin 8 Wiring Pattern 9 Via 10 External Electrode Terminal 11 Sidewall 12 Transport Case 13 Semiconductor Device 14 Semiconductor Carrier 15 Semiconductor Device 16 Sidewall 17 Transport Case 18 Corner 19 Semiconductor carrier

Claims (5)

[Claims] 1. A semiconductor carrier comprising an insulating substrate having a plurality of electrodes on the upper surface and external electrode terminals arranged on the bottom surface, a semiconductor element bonded to the upper surface of the semiconductor carrier via bump electrodes, and the semiconductor. A semiconductor device comprising a resin that fills and coats a gap between an element and the semiconductor carrier and a peripheral edge portion of the semiconductor element, and a corner portion of the semiconductor carrier is subjected to a cutting treatment. 2. A semiconductor carrier composed of an insulating substrate having a plurality of electrodes on the upper surface and external electrode terminals arranged on the bottom surface, a semiconductor element bonded to the upper surface of the semiconductor carrier via bump electrodes, and the semiconductor. It is composed of a resin that fills and coats the gap between the element and the semiconductor carrier and the peripheral edge of the semiconductor element, and the semiconductor carrier has a rounded corner, and the corner is substantially removed. Characteristic semiconductor device. 3. A semiconductor carrier composed of an insulating substrate having a plurality of electrodes on the upper surface and external electrode terminals arranged on the bottom surface, a semiconductor element bonded to the upper surface of the semiconductor carrier via bump electrodes, and the semiconductor. The semiconductor is formed on the side wall of the semiconductor carrier, which is made of a resin that fills and covers the gap between the element and the semiconductor carrier and the peripheral edge of the semiconductor element, and is stored in a carrying case surrounded by four side walls. A semiconductor device characterized in that a corner of the semiconductor carrier of the semiconductor device is provided with a roundness so that the semiconductor carrier of the device is not damaged by collision. 4. A semiconductor carrier having an insulating base material having a plurality of electrodes on the upper surface and external electrode terminals arranged on the bottom surface and easily damaged by an external force, and a bump electrode on the upper surface of the semiconductor carrier via a bump electrode. The semiconductor element is joined, and the gap between the semiconductor element and the semiconductor carrier and the resin that covers the peripheral edge of the semiconductor element are filled and housed in a transport case that is surrounded on all sides by sidewalls and transported. The semiconductor device is characterized in that a corner portion of the semiconductor carrier of the semiconductor device is rounded so that the semiconductor carrier of the semiconductor device does not collide with and damage the side wall. 5. A semiconductor carrier composed of an insulating substrate having a plurality of electrodes on the upper surface and external electrode terminals arranged on the bottom surface, a semiconductor element bonded to the upper surface of the semiconductor carrier, and an electrode pad on the semiconductor element. A plurality of bump electrodes provided on the semiconductor element and connecting a plurality of electrodes on the semiconductor carrier, a conductive adhesive connecting a plurality of electrodes on the upper surface of the semiconductor carrier and a bump electrode, and the semiconductor A semiconductor device comprising: a resin filling and covering a gap between an element and the semiconductor carrier and a peripheral end portion of the semiconductor element, wherein the semiconductor carrier has a substantially circular planar shape.